CN220397289U - Gas transport system of semiconductor deposition equipment - Google Patents
Gas transport system of semiconductor deposition equipment Download PDFInfo
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- CN220397289U CN220397289U CN202322088181.5U CN202322088181U CN220397289U CN 220397289 U CN220397289 U CN 220397289U CN 202322088181 U CN202322088181 U CN 202322088181U CN 220397289 U CN220397289 U CN 220397289U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000008021 deposition Effects 0.000 title abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 248
- 238000011084 recovery Methods 0.000 claims abstract description 51
- 238000003860 storage Methods 0.000 claims abstract description 34
- 239000012159 carrier gas Substances 0.000 claims abstract description 22
- 239000012495 reaction gas Substances 0.000 claims abstract description 18
- 230000001276 controlling effect Effects 0.000 claims description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
The utility model provides a gas transportation system of a semiconductor deposition device, comprising: the device comprises at least two gas collecting pipelines, a mixing pipeline, an output pipeline and a gas recovery system which are connected in parallel; the at least two gas converging pipelines are used for respectively introducing reaction gas and carrier gas; the mixing pipeline is used for mixing the reaction gas and the carrier gas to generate mixed gas; the output pipeline is communicated with the output end of the mixing pipeline and is used for outputting mixed gas; the gas recovery system comprises a gas recovery pipeline, a gas storage tank, a compressor and a valve assembly, wherein the gas storage tank, the compressor and the valve assembly are sequentially communicated with the gas recovery pipeline, the gas recovery pipeline is communicated with the output pipeline and is used for collecting mixed gas which is not used for reaction through the gas storage tank and compressing the mixed gas which is not used for reaction through the compressor, and when the pressure of the gas storage tank reaches a set value, the mixed gas in the gas storage tank starts to be conveyed to the output pipeline of the semiconductor device. The system is used for improving the utilization rate of the reaction gas.
Description
Technical Field
The utility model relates to the technical field of semiconductor manufacturing, in particular to a gas transportation system of semiconductor deposition equipment.
Background
Reduced pressure vapor deposition (RPCVD) equipment performs boron and phosphorus doping to increase electrons and holes, thereby improving carrier migration rate to meet performance requirements. The semiconductor chip industry belongs to the high energy consumption industry, a large amount of energy and materials are consumed in the production process, and most of the used reaction gas can be burnt along with the waste gas in the chemical vapor deposition process, so that waste is caused. For example, to use H 2 Diluting reaction gas B 2 H 6 For example, B of the machine 2 H 6 The volume flow of the mass flow controller (Mass Flow Controller, MFC) in the corresponding gas collecting pipeline is 500sccm, H 2 The corresponding MFC volume flow in the gas collecting pipeline is 2000sccm, the size of the MFC is changed through the gas Bias rate (Bias), if the gas Bias rate is 60%, the actual volume flow of the mixed gas is 250sccm, the gas utilization rate is 22.7%, and the residual 77.3% of gas is wasted along with the transmission of the mixed gas to the waste gas treatment equipment through the pipeline where the mixed gas outlet is located. Therefore, the integrated circuit production has the problem of low gas utilization rate, and further has great influence on the cost expense and sales profit margin of the chip.
Disclosure of Invention
The utility model aims to provide a gas transportation system of semiconductor deposition equipment, which is used for improving the utilization rate of reaction gas and saving the production cost of chips.
The utility model provides a gas transport system of a semiconductor deposition apparatus, comprising: the device comprises at least two gas collecting pipelines, a mixing pipeline, an output pipeline and a gas recovery system which are connected in parallel, wherein the at least two gas collecting pipelines are used for respectively introducing reaction gas and carrier gas, the mixing pipeline is communicated with the output ends of the at least two gas collecting pipelines and used for mixing the reaction gas and the carrier gas to generate mixed gas, and the output pipeline is communicated with the output end of the mixing pipeline and used for outputting the mixed gas; the gas recovery system comprises a gas recovery pipeline, a gas storage tank, a compressor and a valve assembly, wherein the gas storage tank, the compressor and the valve assembly are sequentially communicated with the gas recovery pipeline, the gas recovery pipeline is communicated with the output pipeline, the gas recovery system is used for collecting mixed gas which is not used for reaction through the gas storage tank and compressing the mixed gas which is not used for reaction through the compressor, and when the pressure of the gas storage tank reaches a set value, the mixed gas in the gas storage tank starts to be conveyed to the output pipeline of the semiconductor device.
In a possible embodiment, the gas recovery system further includes a purifier for purifying the mixed gas compressed by the compressor.
In a possible embodiment, the system further comprises a controller for controlling the valve assemblies of the two gas collecting pipelines and the valve assembly of the gas recovery system; when the pressure in the gas storage tank reaches a set value, the controller is also used for closing the air inlet valves of the at least two gas collecting pipelines and opening the gas valve of the gas storage tank, and the mixed gas in the gas storage tank is transported to the output pipeline of the semiconductor device through the gas recovery pipeline.
In a possible embodiment, the controller is further configured to: and when the pressure in the gas storage tank is reduced to a certain value, closing the gas inlet valve of the gas recovery pipeline, and opening the gas inlet valves of the at least two gas collecting pipelines so as to continuously input carrier gas and reaction gas.
In a possible embodiment, the output pipeline comprises an air outlet, a mixed gas outlet and a main air source outlet; the controller is further configured to: and after the gas in the at least two gas collecting pipelines is stabilized, controlling a part of the mixed gas for reaction to be discharged from a main gas source outlet, and controlling the other part of the mixed gas which is not used for reaction to be introduced into a gas recovery pipeline from the mixed gas outlet.
In a possible embodiment, the controller is further configured to: before the pressure in the gas recovery pipeline is stabilized, the mixed gas which is not used for reaction is controlled to be discharged through the gas outlet of the gas recovery system until the pressure in the gas recovery pipeline is stabilized, and the mixed gas which is not used for reaction is controlled to be conveyed to the output pipeline of the semiconductor device.
In one possible embodiment, the valve assembly includes an electrically operated valve, a normally closed air valve, a pressure regulating valve, and a filter screen.
In yet another possible embodiment, the valve assembly may include a mass flow controller in addition to an electrically operated valve, a normally closed gas valve, a pressure regulating valve, and a filter screen.
In yet another possible embodiment, the carrier gas is hydrogen and the reactant gas is diborane or phosphine.
In other possible embodiments, the flow rate of the carrier gas ranges from 1 to 20000sccm, and the flow rate of the reaction gas ranges from 1 to 1000sccm.
The gas transportation system of the semiconductor device has the beneficial effects that: because the gas recovery system comprises the gas storage tank, the compressor and the purifier, the mixed gas which is not used for reaction can be recovered and reused, so that the gas utilization rate is improved, and the production cost of chips is saved.
Drawings
FIG. 1 is a schematic diagram of a gas mixing pipeline of a machine provided in the prior art;
FIG. 2 is a schematic flow chart of a working method of a gas mixing pipeline structure provided in the prior art;
FIG. 3 is a schematic diagram of a gas mixing pipeline with a gas recovery system according to the present utility model;
FIG. 4 is a schematic flow chart of a working method of the pipeline structure shown in FIG. 3 according to the present utility model;
fig. 5 is an assembly diagram corresponding to the pipeline structure shown in fig. 3 according to an embodiment of the present utility model.
Detailed Description
Semiconductor deposition equipment is used in the prior art to grow epitaxial layers on wafer surfaces and generally includes an epitaxial growth (Epi) chamber. The reactive gas can enter the Epi chamber after dilution, so the reactive gas can be diluted by mixing carrier gas before entering the Epi chamber. The gas transportation system structure of the conventional semiconductor device is shown in fig. 1, and comprises two gas collecting pipelines, a mixing pipeline and an output pipeline which are connected in parallel. The gas-transport system transports a reactive gas, e.g. diborane (B) 2 H 6 ) And the gas-collecting pipeline is filled with carrier gas (such as hydrogen) and the other gas-collecting pipeline, and the two gas-collecting pipelines are both provided with valve assemblies, wherein the valve assemblies comprise an electric valve, a normally closed air valve, a pressure regulating valve and a filter screen, and are also provided with mass flow controllers (Mass Flow Controller, MFC). Wherein, the valve components of two air collecting pipelines are uniformly controlled by a controller. In addition, the gas transportation system also comprises four paths of gas outlets, namely a carrier gas outlet, a mixed gas outlet and a main gas source outlet.
The working flow of the gas transportation system is shown in fig. 2, and comprises the following steps: first judge B 2 H 6 With carrier gas H 2 If the pressure of the two paths of gas is stable, discharging the gas through a pipeline where the gas outlet is positioned until the pressure of the gas is stable, introducing the gas into a gas collecting pipeline for mixing to generate mixed gas, controlling the gas flow by the MFC, continuously judging whether the pressure of the mixed gas is stable, if the pressure of the mixed gas is unstable, discharging the mixed gas through the pipeline where the gas outlet is positioned, otherwise, introducing a small part of the mixed gas for reaction into the Epi cavity through a main gas source outlet; most of the mixed gas is not used for the reaction but is discharged through a pipe where the mixed gas outlet is located. As can be seen from the above examples, a large amount of mixed gas is not utilized, and there is a problem in that the gas utilization rate is low in the integrated circuit production process.
In order to solve the problems, the utility model adds a gas recovery system in the original machine, wherein the gas recovery system comprises a gas storage tank and a compressor, or a purifier can be further included on the basis, and the gas recovery system can recover and reuse the mixed gas which is not used for reaction, so as to improve the gas utilization rate.
For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
Fig. 3 shows a structure diagram of an improved gas mixing pipeline provided by the utility model, wherein the gas mixing pipeline comprises: the device comprises a controller, two gas collecting pipelines connected in parallel, a mixing pipeline, an output pipeline and a gas recovery system.
The two gas converging pipelines are used for respectively introducing reaction gas and carrier gas. As can be seen from the figure, the two gas collecting pipelines are provided with a valve assembly and a mass flow controller, and the valve assemblies of the two gas collecting pipelines are uniformly controlled by the controller; one of the two gas collecting pipelines is communicated with the reaction gas, and the other gas collecting pipeline is communicated with the carrier gas.
The mixing pipeline is communicated with the output ends of the two gas collecting pipelines and is used for mixing the reaction gas and the carrier gas to generate mixed gas. The output pipeline is communicated with the output end of the mixing pipeline and is used for outputting the mixed gas mixed by the mixing pipeline.
It should be understood that fig. 3 illustrates two parallel gas converging lines, and in practice, the gas converging lines are not limited to two lines, and there may be three or more gas converging lines, which is not shown by way of example in this embodiment.
The gas recovery system newly added in fig. 3 includes: and the gas recovery pipeline is communicated with the output pipeline, the gas storage tank and the compressor are sequentially communicated with the gas recovery pipeline, and the valve assembly. The valve assembly of the gas recovery system is also controlled in unison by the controller. Wherein, the gas storage tank is used for storing mixed gas which is not used for reaction; the compressor is used for compressing the mixed gas which is not used for the reaction. Optionally, the gas recovery system in this embodiment may further include a purifier, where the purifier is configured to purify the compressed mixed gas, so that the gas recovery system may transport the purified gas to an output pipeline of the semiconductor device, so as to recycle the mixed gas that is not used for reaction, thereby improving a gas utilization rate and saving a chip production cost.
In conjunction with fig. 4, the workflow of the gas recovery system includes: when the gas pressure in the gas storage tank reaches a certain value, the controller closes the gas inlet valve of the factory end and opens the gas valve of the gas storage tank. The mixed gas is stored in the gas storage tank through a pipeline where the mixed gas outlet is located, the gas is compressed by the compressor, the purified gas is stabilized through a pipeline where the gas outlet is located, and then the gas flows back to the pipeline where the main gas source outlet is located. When the gas pressure in the gas storage tank is reduced to a certain value, the controller closes the branch electric valve, and opens the service end gas inlet valve to input gas for the process cavity again, and the gas is stored in the gas storage tank. The method realizes repeated recycling of the gas, thereby realizing the maximization of the gas utilization rate and further saving the cost.
The reaction gas is referred to as B hereinafter 2 H 6 The carrier gas being H 2 For example, fig. 5 illustrates an improved gas mixing circuit assembly. From the figure, the mixed gas is compressed and purified by the gas recovery system and then flows back to the main gas source outlet again, so that the mixed gas is realThe process chamber is now fed with gas. The gas recovery system shown in fig. 5 is particularly suitable for use in a tool for performing epitaxial growth processes by vapor deposition. The flow rates of the gases are respectively B 2 H 6 ：1～1000sccm、H 2 : 1-20000 sccm; the gas outlet to the stabilizing time is 0-2 s.
It should be understood that the reaction gas in this embodiment is not limited to B 2 H 6 The gas recovery device can also be used as other mixed gas (such as phosphine PH 3 Etc.).
In addition, in the embodiment of the utility model, the machine enters an initial (idle) state and then the purification opportunity is used for carrying out carrier gas purification, and then the gas in the gas storage tank is pumped to the bottom pressure by the compressor, so that the pollution of the process cavity caused by the concentration change is prevented.
It should be understood that the gas recovery system described in the present utility model is applicable to gas recovery in the same batch production process of the same semiconductor product in the semiconductor deposition apparatus, i.e. is applicable to the production of the same batch of the product, and therefore, it is necessary to maintain the same concentration level. When the product is changed, the carrier gas of the gas storage tank is required to be purified and pumped to the bottom pressure, and after the gas used by the previous batch of products is cleaned, the next batch of products can be produced.
While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. A gas delivery system for a semiconductor device, comprising: the device comprises at least two gas collecting pipelines, a mixing pipeline, an output pipeline and a gas recovery system which are connected in parallel;
the at least two gas converging pipelines are used for respectively introducing reaction gas and carrier gas;
the mixing pipeline is communicated with the output ends of the at least two gas converging pipelines and is used for mixing the reaction gas and the carrier gas to generate mixed gas;
the output pipeline is communicated with the output end of the mixing pipeline and is used for outputting the mixed gas;
the gas recovery system comprises a gas recovery pipeline, a gas storage tank, a compressor and a valve assembly, wherein the gas storage tank, the compressor and the valve assembly are sequentially communicated with the gas recovery pipeline, the gas recovery pipeline is communicated with the output pipeline, the gas recovery system is used for collecting mixed gas which is not used for reaction through the gas storage tank and compressing the mixed gas which is not used for reaction through the compressor, and when the pressure of the gas storage tank reaches a set value, the mixed gas in the gas storage tank starts to be conveyed to the output pipeline of the semiconductor device.
2. The system of claim 1, wherein the gas recovery system further comprises a purifier for purifying the mixed gas compressed by the compressor.
3. The system of claim 1, further comprising a controller for controlling the valve assemblies of the two gas collection lines and the valve assembly of the gas recovery system;
when the pressure in the gas storage tank reaches a set value, the controller is also used for closing the air inlet valves of the at least two gas collecting pipelines and opening the gas valve of the gas storage tank, and the mixed gas in the gas storage tank is transported to the output pipeline of the semiconductor device through the gas recovery pipeline.
4. The system of claim 3, wherein the controller is further configured to: and when the pressure in the gas storage tank is reduced to a certain value, closing the gas inlet valve of the gas recovery pipeline, and opening the gas inlet valves of the at least two gas collecting pipelines so as to continuously input carrier gas and reaction gas.
5. A system according to claim 3, wherein the output line comprises an air outlet, a mixed gas outlet and a main gas source outlet; the controller is further configured to: and after the gas in the at least two gas collecting pipelines is stabilized, controlling a part of the mixed gas for reaction to be discharged from a main gas source outlet, and controlling the other part of the mixed gas which is not used for reaction to be introduced into a gas recovery pipeline from the mixed gas outlet.
6. The system of claim 3, wherein the controller is further configured to:
before the pressure in the gas recovery pipeline is stabilized, the mixed gas which is not used for reaction is controlled to be discharged through the gas outlet of the gas recovery system until the pressure in the gas recovery pipeline is stabilized, and the mixed gas which is not used for reaction is controlled to be conveyed to the output pipeline of the semiconductor device.
7. The system of any one of claims 1 to 4, wherein the valve assembly comprises an electrically operated valve, a normally closed gas valve, a pressure regulating valve, and a filter screen.
8. The system of claim 7, wherein the valve assembly further comprises a mass flow controller.
9. The system of any one of claims 1 to 4, wherein the carrier gas is hydrogen and the reactant gas is diborane or phosphine.
10. The system of any one of claims 1 to 4, wherein the carrier gas has a flow rate in the range of 1 to 20000sccm and the reactant gas has a flow rate in the range of 1 to 1000sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322088181.5U CN220397289U (en) | 2023-08-04 | 2023-08-04 | Gas transport system of semiconductor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322088181.5U CN220397289U (en) | 2023-08-04 | 2023-08-04 | Gas transport system of semiconductor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220397289U true CN220397289U (en) | 2024-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202322088181.5U Active CN220397289U (en) | 2023-08-04 | 2023-08-04 | Gas transport system of semiconductor deposition equipment |
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| Country | Link |
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| CN (1) | CN220397289U (en) |
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2023
- 2023-08-04 CN CN202322088181.5U patent/CN220397289U/en active Active
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