CN220393904U - Air flow homogenizing device for plasma chemical vapor deposition equipment - Google Patents

Air flow homogenizing device for plasma chemical vapor deposition equipment Download PDF

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Publication number
CN220393904U
CN220393904U CN202322131923.8U CN202322131923U CN220393904U CN 220393904 U CN220393904 U CN 220393904U CN 202322131923 U CN202322131923 U CN 202322131923U CN 220393904 U CN220393904 U CN 220393904U
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vapor deposition
chemical vapor
plasma chemical
pipe
gas
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杨庆明
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Shanghai Xincheng Electronic Technology Co ltd
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Shanghai Xincheng Electronic Technology Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The utility model relates to the technical field of airflow homogenization, and discloses an airflow homogenization device for plasma chemical vapor deposition equipment, which comprises a plasma chemical vapor deposition equipment body, wherein a reaction component is arranged on the right side of the plasma chemical vapor deposition equipment body, a uniform component is arranged on the right side of the plasma chemical vapor deposition equipment body, the reaction component comprises a reaction box fixedly arranged at the top of the plasma chemical vapor deposition equipment body, an active gas pipe is fixedly arranged on the right side of the reaction box, a conveying pipe is fixedly arranged on the right side of the reaction box, a gas flowmeter is fixedly arranged on the outer side of the conveying pipe, an exhaust valve is fixedly arranged on the outer side of the conveying pipe, and a first flange is fixedly connected with the bottom end of the conveying pipe. The airflow homogenizing device for the plasma chemical vapor deposition equipment can effectively improve the airflow homogenizing effect, and enable the air to uniformly enter the equipment for reaction.

Description

Air flow homogenizing device for plasma chemical vapor deposition equipment
Technical Field
The utility model relates to the technical field of airflow homogenization, in particular to an airflow homogenization device for plasma chemical vapor deposition equipment.
Background
The basic principle of the plasma chemical vapor deposition technology is that under the action of a high-frequency or direct-current electric field, source gas is ionized to form plasma, low-temperature plasma is used as an energy source, a proper amount of reaction gas is introduced, and the plasma discharge is utilized to activate the reaction gas and realize the chemical vapor deposition technology.
In the process of operating the plasma chemical vapor deposition technology, the source gas and the reaction gas need to be introduced into the equipment to react, so that excessive collision between the gases can not happen, and meanwhile, in order to enable the plasma and the reaction gas to react sufficiently, an air flow homogenizing device is generally used for enabling the reaction air flow to enter time-varying uniformity, the existing air flow homogenizing device generally blocks the air flow and reduces the power of the air flow, so that the air flow achieves the effect of gentle output, the existing air flow homogenizing device has a single structure, the air flow cannot be effectively homogenized only by a blocking mode, and a certain lifting space exists, so that the air flow homogenizing device for the plasma chemical vapor deposition equipment is provided for solving the problems.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the utility model provides the airflow homogenizing device for the plasma chemical vapor deposition equipment, which has the advantages of effectively improving the airflow homogenizing effect and the like, and solves the problem that the structure of the airflow homogenizing device for the plasma chemical vapor deposition equipment is single.
(II) technical scheme
In order to achieve the purpose of effectively improving the airflow homogenization effect, the utility model provides the following technical scheme: the airflow homogenizing device for the plasma chemical vapor deposition equipment comprises a plasma chemical vapor deposition equipment body, wherein a reaction component is arranged on the right side of the plasma chemical vapor deposition equipment body, and a homogenizing component is arranged on the right side of the plasma chemical vapor deposition equipment body;
the reaction assembly comprises a reaction box fixedly arranged at the top of the plasma chemical vapor deposition equipment body, an active gas pipe is fixedly arranged on the right side of the reaction box, a conveying pipe is fixedly arranged on the right side of the reaction box, a gas flowmeter is fixedly arranged on the outer side of the conveying pipe, an extraction valve is fixedly arranged on the outer side of the conveying pipe, a first flange is fixedly connected to the bottom end of the conveying pipe, a second flange is fixedly arranged at the bottom of the first flange, and a gas storage tank is fixedly connected to the bottom of the second flange;
the utility model discloses a conveyer pipe, including evenly subassembly, evenly subassembly includes the horn pipe of fixed connection at the conveyer pipe inboard, the left end fixedly connected with resistance pipe of horn pipe, the inboard fixedly connected with evenly distributed's of resistance pipe three groups deep bead, evenly distributed's intercommunicating pore has been seted up to the outside of resistance pipe, the inboard fixedly connected with three solid fixed ring of conveyer pipe, three fixedly connected with gas distribution pipe between the inboard of solid fixed ring, evenly distributed's gas distribution hole has been seted up in the gas distribution pipe's outside, the inboard left end fixedly connected with flow board of conveyer pipe, three flow hole has been seted up in the left side of flow board.
Further, the gas flowmeter is located on the left side of the air extraction valve, and the air extraction valve is located on one side close to the air storage tank.
Further, the tops of the first flange and the second flange are fixedly connected through uniformly distributed bolts, and nuts are connected to the outer sides of the bolts in a threaded mode.
Further, the diameter of the right end of the horn tube is larger than that of the left end, and the outer side of the right end of the horn tube is fixedly connected with the inner side of the conveying tube.
Furthermore, the number of the wind shields in each group is two, and the two corresponding wind shields are distributed vertically symmetrically.
Further, the left end and the right end of the gas distribution pipe are provided with fixing holes, and the inner sides of the fixing holes are fixedly connected with the outer sides of the resistance pipes.
Further, the number of the air-dividing holes is three times that of the communication holes, and the inner diameter of the air-dividing holes is smaller than that of the communication holes.
(III) beneficial effects
Compared with the prior art, the utility model provides an airflow homogenizing device for plasma chemical vapor deposition equipment, which has the following beneficial effects:
this an air current homogenization device for plasma chemical vapor deposition equipment uses through the cooperation between reaction unit on plasma chemical vapor deposition equipment body right side and the even subassembly, can effectually promote the effect of air current homogenization, weakens through the power with the air current, can break up the separation with the air current at the in-process of carrying simultaneously to reach even effect of carrying, let the inside that the gas can even enter into equipment react.
Drawings
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a cross-sectional view of a delivery tube connection in accordance with the present utility model;
fig. 3 is a front view of the structure of the present utility model.
In the figure: 1 a plasma chemical vapor deposition equipment body, 200 a reaction component, 201 a reaction box, 202 a source gas pipe, 203 a conveying pipe, 204 a gas flowmeter, 205 an exhaust valve, 206 a first flange, 207 a second flange, 208 a gas storage tank, 300 a uniform component, 301 a horn pipe, 302 a resistance pipe, 303 a wind shield, 304 a communication hole, 305 a fixing ring, 306 a gas distribution pipe, 307 a gas distribution hole, 308 a flow plate and 309 a flow hole.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1-3, the present utility model provides a technical solution: the utility model provides an air current homogenization device for plasma chemical vapor deposition equipment, including plasma chemical vapor deposition equipment body 1, reaction unit 200 is installed on the right side of plasma chemical vapor deposition equipment body 1, even subassembly 300 is installed on the right side of plasma chemical vapor deposition equipment body 1, through the cooperation between reaction unit 200 and the even subassembly 300 on plasma chemical vapor deposition equipment body 1 right side, can effectually promote the effect of air current homogenization, through weakening the power of air current, can break up the air current separation at the in-process of carrying simultaneously to reach even effect of carrying, let the inside that the gas can even enter into equipment react.
The reaction module 200 in this embodiment is a structure for preparing before reaction.
As shown in fig. 1 and 3, the reaction assembly 200 includes a reaction tank 201 fixedly installed at the top of the plasma chemical vapor deposition apparatus body 1, an active gas pipe 202 is fixedly installed at the right side of the reaction tank 201, a conveying pipe 203 is fixedly installed at the right side of the reaction tank 201, a gas flowmeter 204 is fixedly installed at the outer side of the conveying pipe 203, the gas flowmeter 204 is a meter for measuring gas flow, the gas flow is recorded in a pipeline, an extraction valve 205 is fixedly installed at the outer side of the conveying pipe 203, the extraction valve 205 is a control device for conveying and extracting gas, a first flange 206 is fixedly connected to the bottom end of the conveying pipe 203, a second flange 207 is fixedly installed at the bottom of the first flange 206, and a gas storage tank 208 is fixedly connected to the bottom of the second flange 207.
It should be noted that, the gas flow meter 204 is located at the left side of the air extraction valve 205, and the air extraction valve 205 is located at the side close to the air storage tank 208, so that the air in the air storage tank 208 is conveniently extracted, and the flow of the passing air is monitored by the gas flow meter 204.
In addition, the tops of the first flange 206 and the second flange 207 are connected and fixed through uniformly distributed bolts, nuts are connected to the outer side threads of the bolts, the number of the bolts is 6-8, and the first flange 206 and the second flange 207 can be stably connected and fixed through the matched use of the bolts and the nuts.
The uniformity component 300 in this embodiment is a structure for homogenizing the air flow.
As shown in fig. 1 and 2, the uniformity component 300 includes a trumpet 301 fixedly connected to the inner side of the conveying pipe 203, a resistance pipe 302 is fixedly connected to the left end of the trumpet 301, three groups of wind shields 303 are uniformly distributed on the inner side of the resistance pipe 302, uniformly distributed communication holes 304 are formed in the outer side of the resistance pipe 302, three fixing rings 305 are fixedly connected to the inner side of the conveying pipe 203, a gas distributing pipe 306 is fixedly connected between the inner sides of the three fixing rings 305, uniformly distributed gas distributing holes 307 are formed in the outer side of the gas distributing pipe 306, a flow plate 308 is fixedly connected to the left end of the inner side of the conveying pipe 203, and three flow holes 309 are formed in the left side of the flow plate 308.
The horn 301 is located at the left side of the gas flowmeter 204, the diameter of the right end of the horn 301 is larger than that of the left end, and the outer side of the right end of the horn 301 is fixedly connected with the inner side of the conveying pipe 203, so that the gas passing through the gas flowmeter 204 can directly enter the inside of the horn 301.
In addition, the number of the wind shields 303 in each group is two, the two wind shields 303 are vertically symmetrically distributed, the vertical height of the wind shields 303 is larger than the radius of the resistance tube 302, so that the wind shields 303 can block airflow, the effect of weakening airflow power is achieved, the left end of the resistance tube 302 is provided with uniformly distributed exhaust holes, the number of the exhaust holes is 4-6, and the gas which is completely weakened by the three groups of wind shields 303 in the inner side of the resistance tube 302 can be exhausted through the exhaust holes.
Meanwhile, fixing holes are formed in the left end and the right end of the gas distribution pipe 306, the inner sides of the fixing holes are fixedly connected with the outer sides of the resistance pipes 302, gas in the resistance pipes 302 can enter the gas distribution pipe 306 through the communication holes 304, the number of the gas distribution holes 307 is three times that of the communication holes 304, the inner diameter of the gas distribution holes 307 is smaller than that of the communication holes 304, and the gas entering the gas distribution pipe 306 through the communication holes 304 can be uniformly distributed and discharged through the gas distribution holes 307.
The working principle of the embodiment is as follows:
when the experiment of the plasma chemical vapor deposition technology is carried out, the gas storage tank 208 is fixedly connected with the first flange 206 through the second flange 207, the gas flowmeter 204 is started, the extraction valve 205 is started, the reaction gas in the gas storage tank 208 enters the conveying pipe 203 through the extraction valve 205, the passing amount of the gas flow can be monitored in real time under the action of the gas flowmeter 204, an operator can conveniently control the opening or closing of the extraction valve 205 according to data, the reaction gas enters the resistance pipe 302 under the action of the horn 301, the power of the gas flow is weakened under the action of the wind shield 303, the gas flow can flow into the gas distribution pipe 306 through the communication hole 304 in the conveying process, then enters the conveying pipe 203 again after being separated through the gas distribution hole 307, finally enters the reaction box 201 in the reaction experiment through the flow hole 309, the gas flow is weakened through the wind shield 303 in the conveying process, the gas is dispersed through the gas distribution hole 307, and no larger power exists when the gas is converged again in the conveying pipe 203, and therefore the gas can be naturally and uniformly conveyed into the interior of the reaction box 201.
Compared with the prior art, the air flow homogenizing device for the plasma chemical vapor deposition equipment can effectively improve the air flow homogenizing effect by matching the reaction component 200 on the right side of the plasma chemical vapor deposition equipment body 1 with the homogenizing component 300, weaken the power of the air flow, scatter and separate the air flow in the conveying process, so that the effect of uniform conveying is achieved, the air can uniformly enter the equipment for reaction, and the problem that the structure of the air flow homogenizing device for the plasma chemical vapor deposition equipment is single is solved.
The electrical components appearing herein are all electrically connected with the master controller and the power supply, the master controller can be a conventional known device for controlling a computer and the like, and the prior art of power connection is not described in detail herein.
It should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made hereto without departing from the spirit and principles of the present utility model.

Claims (7)

1. An air flow homogenizing device for a plasma chemical vapor deposition apparatus, comprising a plasma chemical vapor deposition apparatus body (1), characterized in that: the right side of the plasma chemical vapor deposition equipment body (1) is provided with a reaction component (200), and the right side of the plasma chemical vapor deposition equipment body (1) is provided with a uniform component (300);
the reaction assembly (200) comprises a reaction box (201) fixedly arranged at the top of the plasma chemical vapor deposition equipment body (1), an active gas pipe (202) is fixedly arranged on the right side of the reaction box (201), a conveying pipe (203) is fixedly arranged on the right side of the reaction box (201), a gas flowmeter (204) is fixedly arranged on the outer side of the conveying pipe (203), an extraction valve (205) is fixedly arranged on the outer side of the conveying pipe (203), a first flange (206) is fixedly connected with the bottom end of the conveying pipe (203), a second flange (207) is fixedly arranged at the bottom of the first flange (206), and a gas storage tank (208) is fixedly connected with the bottom of the second flange (207);
even subassembly (300) are including fixed connection at inboard horn tube (301) of conveyer pipe (203), the left end fixedly connected with resistance pipe (302) of horn tube (301), three group's deep bead (303) of evenly distributed are connected with to the inboard fixedly connected with of resistance pipe (302), communication hole (304) of evenly distributed have been seted up in the outside of resistance pipe (302), the inboard fixedly connected with of conveyer pipe (203) is three solid fixed ring (305), three gu be connected with divide trachea (306) between the inboard of solid fixed ring (305), divide trachea (307) of evenly distributed have been seted up in the outside of trachea (306), the inboard left end fixedly connected with flow plate (308) of conveyer pipe (203), three flow hole (309) have been seted up in the left side of flow plate (308).
2. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the gas flowmeter (204) is positioned on the left side of the extraction valve (205), and the extraction valve (205) is positioned on the side close to the gas storage tank (208).
3. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the tops of the first flange (206) and the second flange (207) are fixedly connected through uniformly distributed bolts, and nuts are connected to the outer sides of the bolts in a threaded mode.
4. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the diameter of the right end of the horn tube (301) is larger than that of the left end, and the outer side of the right end of the horn tube (301) is fixedly connected with the inner side of the conveying tube (203).
5. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the number of the wind shields (303) in each group is two, and the two wind shields (303) are symmetrically distributed up and down.
6. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the left end and the right end of the gas distribution pipe (306) are respectively provided with a fixing hole, and the inner sides of the fixing holes are fixedly connected with the outer sides of the resistance pipes (302).
7. The gas flow homogenizing apparatus for a plasma chemical vapor deposition device according to claim 1, wherein: the number of the air distribution holes (307) is three times that of the communication holes (304), and the inner diameter of the air distribution holes (307) is smaller than that of the communication holes (304).
CN202322131923.8U 2023-08-09 2023-08-09 Air flow homogenizing device for plasma chemical vapor deposition equipment Active CN220393904U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202322131923.8U CN220393904U (en) 2023-08-09 2023-08-09 Air flow homogenizing device for plasma chemical vapor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202322131923.8U CN220393904U (en) 2023-08-09 2023-08-09 Air flow homogenizing device for plasma chemical vapor deposition equipment

Publications (1)

Publication Number Publication Date
CN220393904U true CN220393904U (en) 2024-01-26

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ID=89600401

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202322131923.8U Active CN220393904U (en) 2023-08-09 2023-08-09 Air flow homogenizing device for plasma chemical vapor deposition equipment

Country Status (1)

Country Link
CN (1) CN220393904U (en)

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