CN220342747U - Super-structure lens OLED light-emitting device - Google Patents

Abstract

The disclosure provides an OLED light-emitting device with an ultra-structure lens, and belongs to the field of light-emitting devices. The super-structured lens OLED light-emitting device includes: the OLED device comprises a first substrate, an anode layer, an OLED structure layer, a sealing layer, a common electrode layer, a first alignment film, a super-structure lens structure layer, a second alignment film, a pixel electrode layer and a second substrate, wherein the anode layer, the OLED structure layer, the sealing layer, the common electrode layer, the first alignment film, the super-structure lens structure layer, the second alignment film, the pixel electrode layer and the second substrate are sequentially laminated on the surface of the first substrate; the super-structure lens structure layer comprises: the first super-structure lens layer is positioned on the surface of the first alignment film facing the second alignment film, the second super-structure lens layer is positioned on the surface of the second alignment film facing the first alignment film, the frame sealing glue and the liquid crystal layer are positioned between the first alignment film and the second alignment film, and the frame sealing glue surrounds the first super-structure lens layer, the second super-structure lens layer and the liquid crystal layer; the height of the frame sealing glue is 20-50 micrometers.

Description

Super-structure lens OLED light-emitting device

Technical Field

The present disclosure relates to the field of display devices, and in particular, to an OLED light emitting device with a super-structured lens.

Background

An Organic Light-Emitting Diode (OLED) display is widely used in fields such as games, medical treatment, education, military, industry, etc. due to its low power consumption, large operating temperature range, high pixel density, high contrast, and fast response speed.

The related art provides an OLED display having a large number of micro pixel units therein, each including a red light emitting unit, a green light emitting unit, and a blue light emitting unit. The above-mentioned three-color light emitting units are realized by a color filter and a black matrix structure.

Disclosure of Invention

The embodiment of the disclosure provides an ultra-structure lens OLED light-emitting device. The super-structured lens OLED light-emitting device includes:

the OLED device comprises a first substrate, an anode layer, an OLED structure layer, a sealing layer, a public electrode layer, a first alignment film, a super-structure lens structure layer, a second alignment film, a pixel electrode layer and a second substrate, wherein the anode layer, the OLED structure layer, the sealing layer, the public electrode layer, the first alignment film, the super-structure lens structure layer, the second alignment film, the pixel electrode layer and the second substrate are sequentially laminated on the surface of the first substrate;

the super-structured lens structure layer comprises: the frame sealing glue is arranged between the first alignment film and the second alignment film, and surrounds the first super-structure lens layer, the second super-structure lens layer and the liquid crystal layer; the height of the frame sealing glue is 20-50 micrometers.

Optionally, the first super-structure lens layer and the second super-structure lens layer are TiO ₂ 、GaN、Si、SiO ₂ A super-structured lens layer formed of one or more of the above.

Optionally, the thickness of the first super-structure lens layer and the second super-structure lens layer is 100-300nm.

Optionally, the sealing layer is Al ₂ O ₃ 、TiO ₂ 、SiN、SiO ₂ A sealing layer formed of one or more of the above.

Optionally, the first substrate is a thin film transistor TFT silicon substrate.

Optionally, the second substrate is a TFT glass substrate.

Optionally, the anode layer includes a plurality of first block electrodes, and the pixel electrode layer includes a plurality of second block electrodes, and the plurality of first block electrodes and the plurality of second block electrodes are in one-to-one correspondence.

Optionally, the first plurality of bulk electrodes of the anode layer are electrically connected to transistors in the first substrate, and the second plurality of bulk electrodes of the pixel electrode layer are electrically connected to transistors in the second substrate.

Optionally, the OLED structure layer is a white OLED structure layer.

Optionally, the OLED structure layer includes:

and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode layer which are sequentially laminated on the surface of the anode layer.

The technical scheme provided by the embodiment of the disclosure has the beneficial effects that:

the super-structure lens OLED light-emitting device is provided with a super-structure lens structure layer, wherein the super-structure lens structure layer is provided with frame sealing glue and a liquid crystal layer, the height of the frame sealing glue is 20-50 microns, and the thickness of the super-structure lens structure layer is limited by the frame sealing glue with the height. The common electrode layer and the pixel electrode layer on two sides of the liquid crystal layer can control liquid crystal deflection through electrification, the liquid crystal deflection angles are different, and components with different colors in light emitted by the OLED structure layer can pass through the super-structure lens structure layer, so that different colors of light can be generated under the same structure. Meanwhile, the super-structure lens layer in the super-structure lens structure layer can play a role in brightening light, so that excessive brightness loss caused by the fact that the light passes through the super-structure lens structure layer is avoided, and the display effect of the whole device is guaranteed. By using the super-structure lens OLED light-emitting device as an OLED display, color filters with different colors and a black matrix structure are not required to be respectively arranged for sub-pixels with different colors, so that the pixel density of the silicon-based OLED display can be greatly improved, and the display effect of the silicon-based OLED display can be improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.

Fig. 1 is a schematic structural diagram of an OLED light emitting device with a super-structure lens according to an embodiment of the present disclosure;

FIG. 2 is a schematic illustration of light propagation in a super-structured lens structure layer provided by an embodiment of the present disclosure;

FIG. 3 is a schematic structural diagram of an OLED structural layer according to an embodiment of the present disclosure;

fig. 4 is a flowchart of a method for manufacturing an OLED light emitting device with a super-structure lens according to an embodiment of the disclosure.

Detailed Description

For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of an OLED light emitting device with a super-structure lens according to an embodiment of the present disclosure. Referring to fig. 1, the super-structured lens OLED light emitting device includes:

a first substrate 11, an anode layer 12, an OLED structure layer 13, a sealing layer 14, a common electrode layer 15, a first alignment film 16, a super-structure lens structure layer, a second alignment film 21, a pixel electrode layer 22, and a second substrate 23 sequentially stacked on the surface of the first substrate 11;

the super-structured lens structure layer comprises: the first super-structure lens layer 17, the second super-structure lens layer 20, the frame sealing adhesive 19 and the liquid crystal layer 18, wherein the first super-structure lens layer 17 is positioned on the surface of the first alignment film 16 facing the second alignment film 21, the second super-structure lens layer 20 is positioned on the surface of the second alignment film 21 facing the first alignment film 16, the frame sealing adhesive 19 and the liquid crystal layer 18 are positioned between the first alignment film 16 and the second alignment film 21, and the frame sealing adhesive 19 surrounds the first super-structure lens layer 16, the second super-structure lens layer 21 and the liquid crystal layer 18; the height of the frame sealing glue 19 is 20-50 micrometers.

In this implementation manner, the super-structure lens OLED light emitting device is provided with a super-structure lens structure layer, the super-structure lens structure layer is provided with a frame sealing glue 19 and a liquid crystal layer 18, the height of the frame sealing glue 19 is 20-50 micrometers, and the thickness of the super-structure lens structure layer is limited by the frame sealing glue 19 with the height. The common electrode layer 15 and the pixel electrode layer 22 on two sides of the liquid crystal layer 18 can control liquid crystal deflection by powering up, and the liquid crystal deflection angles are different, so that components of different colors in light emitted by the OLED structure layer can pass through the super-structure lens structure layer, and different colors of light can be generated under the same structure. Meanwhile, the super-structure lens layer in the super-structure lens structure layer can play a role in brightening light, so that excessive brightness loss caused by the fact that the light passes through the super-structure lens structure layer is avoided, and the display effect of the whole device is guaranteed. By using the super-structure lens OLED light-emitting device as an OLED display, color filters with different colors and a black matrix structure are not required to be respectively arranged for sub-pixels with different colors, so that the pixel density of the silicon-based OLED display can be greatly improved, and the display effect of the silicon-based OLED display can be improved.

In the embodiment of the disclosure, if the super-structure lens OLED light emitting device is required to be capable of emitting three colors of light of red, green and blue at the same time, only voltages corresponding to the three colors of light need to be determined in advance and then applied to the common electrode and the pixel electrodes of the sub-pixels of different colors. The power-up process is the same as the process of controlling the deflection of the liquid crystal in the liquid crystal display in the related art, and will not be repeated here.

Illustratively, when no voltage is applied to the electrodes on both sides of the liquid crystal layer 18, the above-mentioned thickness of the super-structure lens structure layer allows only red light component to pass through the super-structure lens structure layer when light emitted from the OLED structure layer 13 passes through the super-structure lens structure layer, so that the super-structure lens OLED light emitting device emits red light; when the electrodes on both sides of the liquid crystal layer 18 are applied with a maximum voltage, the voltage changes the optical rotation property and the refraction state of the liquid crystal layer 18, and the super-structure lens structure layer with the thickness enables the light emitted by the OLED structure layer 13 to pass through the super-structure lens structure layer, so that only blue light can pass through the super-structure lens structure layer, and the super-structure lens OLED light-emitting device emits blue light. The applied electricity of the electrodes in the super-structure lens structure layer is changed between 0 and the maximum voltage, so that the super-structure lens OLED light-emitting device emits visible light with the wavelength between the red wavelength and the blue wavelength.

Where the maximum voltage refers to the maximum voltage in the voltage range provided to the electrodes on both sides of the liquid crystal layer 18 by the integrated circuit. For example, if the voltage range is 0 to 5V, the maximum voltage here is 5V.

In the embodiment of the present disclosure, the first substrate 11 is a thin film transistor (Thin Film Transistor, TFT) silicon substrate, and the second substrate 23 is a TFT glass substrate.

The first substrate 11 is electrically connected to the anode layer 12, and the second substrate 23 is electrically connected to the pixel electrode layer 22.

Illustratively, the anode layer 12 includes a plurality of first block electrodes, and the pixel electrode layer 22 includes a plurality of second block electrodes, which are in one-to-one correspondence.

The first substrate 11 includes a plurality of first TFT units, and the second substrate 23 includes a plurality of second TFT units, each of which is electrically connected to a plurality of first bulk electrodes of the anode layer 12, and each of which is electrically connected to a plurality of second bulk electrodes of the pixel electrode layer 22.

In the embodiment of the disclosure, the surface of the OLED structure layer 13 near the first substrate 11 is connected to the anode layer 12. The OLED structure layer 13 includes a plurality of sub-units electrically connected to the first plurality of block electrodes of the anode layer 12, respectively.

The first substrate 11 is used for controlling the electric signal of each first block electrode in the anode layer 12, so that the current of the sub-unit in the OLED structure layer 13 corresponding to each first block electrode is controlled, and the brightness of the emergent light of the sub-pixel is controlled. The second substrate 23 is used for controlling the electric signals of the second block electrodes in the pixel electrode layer 22, so as to control the deflection voltage of the liquid crystal in the super-structure lens structure layer corresponding to the second block electrodes, and further control the light emitting color of the sub-pixel.

It should be noted that the shapes of the anode layer 12 and the pixel electrode layer 22 shown in fig. 1 are only taken as an example, and in actual manufacturing, the anode layer 12 and the pixel electrode layer 22 are composed of a plurality of microelectrodes, and the microelectrodes are arranged in a matrix.

It should be noted that the first substrate 11 and the second substrate 23 are further electrically connected to an integrated circuit, and the common electrode layer 15 is also electrically connected to the integrated circuit, so as to provide an electrical signal to the first substrate 11, the second substrate 23 and the common electrode layer 15 through the integrated circuit.

In the implementation of the present disclosure, the OLED structure layer 13 is a white OLED structure layer, which emits white light and can provide components of various colors.

Fig. 2 is a schematic diagram of light propagation in a super-structured lens structure layer provided by an embodiment of the present disclosure. Referring to fig. 2, fig. 2 shows a first alignment film 16, a second alignment film 21, a frame sealing adhesive 19, a liquid crystal layer 18, a groove 200, white light 201, blue light 202, green light 203, and red light 204.

The first alignment film 16 and the second alignment film 21 have a plurality of groove-shaped grooves 200 thereon, and the groove-shaped grooves 200 do not penetrate the alignment films. By forming a plurality of groove-like recesses 200 in the first alignment film 16 and the second alignment film 21, respectively, the initial deflection angle, i.e., pretilt angle, of the liquid crystal molecules in the liquid crystal layer 18 is controlled.

Referring again to fig. 2, the super-structure lens structure layer is a lens structure, and after the white light enters the lens structure, the propagation directions of the respective color components in the white light, such as blue light 202, green light 203 and red light 204, are different.

At the same time, the liquid crystal molecules in the liquid crystal layer 18 deflect under the action of the voltage. When no voltage is applied, the focus of the red light with the maximum wavelength of visible light is positioned at the center of the lens structure, and the red light can pass through the super-structure lens structure layer; when the maximum voltage is applied, the focus of blue light with the minimum wavelength of visible light is positioned at the center of the lens structure, and the blue light can pass through the super-structure lens structure layer.

Of course, fig. 2 is only a schematic diagram given for facilitating understanding of the present disclosure, and in a practical case, the propagation direction of white light after entering the super-structure lens structure layer may be more complex than that in fig. 2.

A sealing layer 14 is arranged between the OLED structure layer 13 and the common electrode layer 15, and the sealing layer 14 is Al ₂ O ₃ 、TiO ₂ 、SiN、SiO ₂ A sealing layer formed of one or more of the above.

By forming the sealing layer 14 of the above-described material, the sealing layer 14 can be made to have good sealability, and the common electrode layer 15 and the OLED structural layer 13 can be insulated from each other.

Fig. 3 is a schematic structural diagram of a white OLED structure layer according to an embodiment of the disclosure. Referring to fig. 3, the white OLED structure layer 13 includes: a hole injection layer 301, a hole transport layer 302, a light emitting layer 303, an electron transport layer 304, an electron injection layer 305, and a cathode layer 306, which are sequentially stacked on the surface of the anode layer 12.

The white light OLED structure layer with the film structure has a better light emitting effect.

Of course, the film structure of the white OLED structure layer is only used as an example, and in other examples, a film structure may be added to the film structure.

It should be noted that the cathode layer 306 in the OLED structure layer 13 is also electrically connected to the integrated circuit, so as to provide an electrical signal to the cathode layer 306 through the integrated circuit.

Referring again to fig. 1, the first and second super-structured lens layers 17 and 20 are TiO ₂ 、GaN、Si、SiO ₂ A super-structured lens layer formed of one or more of the above.

The super-structure lens layer formed by the materials can have good light transmittance.

In the embodiment of the present disclosure, the first super-structure lens layer 17 and the second super-structure lens layer 20 include a plurality of nano-pillars arranged according to a specific rule. The first super-structure lens layer 17 and the second super-structure lens layer 20 each comprise a plurality of units, each unit corresponds to 1 sub-pixel, and the arrangement modes of the nano-pillars in each unit are the same.

In the embodiment of the disclosure, the thickness of the super-structure lens layer is 100-300nm.

Illustratively, the thickness of the super-structured lens layer may be 200nm.

In the embodiment of the present disclosure, the frame sealing glue 19 has an annular structure.

Illustratively, the liquid crystal in the liquid crystal layer 18 may be nematic liquid crystal.

In the embodiment of the present disclosure, the liquid crystal layer 18, the common electrode layer 15, and the pixel electrode layer 22 constitute a liquid crystal structure, and a deflection mode of the liquid crystal structure may be an In-plane Switching (IPS) mode.

In one example, at least one of the anode layer 12, the common electrode layer 15, the pixel electrode layer 22, and the cathode layer 306 may be a thin metal layer, which can ensure both electrical and optical properties.

In another example, at least one of the anode layer 12, the common electrode layer 15, the pixel electrode layer 22, and the cathode layer 306 may be formed of indium tin oxide (Indium Tin Oxides, ITO).

Illustratively, anode layer 12 is a thin metal layer, common electrode layer 15 is an ITO layer, pixel electrode layer 22 is a thin metal layer, and cathode layer 306 is an ITO layer.

In one possible implementation, an insulating material 24 (shaded in fig. 1) may be filled at the gaps in the anode layer 12, at the gaps in the pixel electrode layer 22.

In another possible implementation, the gaps in the anode layer 12, the gaps in the pixel electrode layer 22 may be filled with adjacent insulating film layers.

Fig. 4 is a method for manufacturing an OLED light emitting device with a super-structure lens according to an embodiment of the disclosure. Referring to fig. 4, the method includes:

401: providing a first substrate and a second substrate, manufacturing an anode layer on the first substrate, and manufacturing a pixel electrode layer on the second substrate.

402: and manufacturing the OLED structure layer on the anode layer.

The OLED structure layer 13 includes a hole injection layer 301, a hole transport layer 302, a light emitting layer 303, an electron transport layer 304, an electron injection layer 305, and a cathode layer 306.

403: and manufacturing a sealing layer on the OLED structure layer.

Illustratively, the sealing layer 14 is prepared by deposition or evaporation.

404: and manufacturing a common electrode layer on the sealing layer.

405: and manufacturing a first alignment film on the common electrode layer, and manufacturing a second alignment film on the pixel electrode layer.

406: and respectively manufacturing a first super-structure lens structure layer and a second super-structure lens structure layer on the surfaces of the first alignment film and the second alignment film.

407: and manufacturing frame sealing glue on the surface of the second alignment film.

408: and (3) the first substrate and the second substrate are combined, so that one end of the frame sealing glue is connected with the first alignment film, and the other end of the frame sealing glue is connected with the second alignment film.

409: and injecting liquid crystal into the frame sealing glue to form a liquid crystal layer.

The foregoing description of the preferred embodiments of the present disclosure is not intended to limit the disclosure, but rather, any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.

Claims (10)

1. An organic light emitting diode, OLED, light emitting device of a super-structured lens, the super-structured lens OLED light emitting device comprising:

the OLED device comprises a first substrate, an anode layer, an OLED structure layer, a sealing layer, a public electrode layer, a first alignment film, a super-structure lens structure layer, a second alignment film, a pixel electrode layer and a second substrate, wherein the anode layer, the OLED structure layer, the sealing layer, the public electrode layer, the first alignment film, the super-structure lens structure layer, the second alignment film, the pixel electrode layer and the second substrate are sequentially laminated on the surface of the first substrate;

the super-structured lens structure layer comprises: the frame sealing glue is arranged between the first alignment film and the second alignment film, and surrounds the first super-structure lens layer, the second super-structure lens layer and the liquid crystal layer; the height of the frame sealing glue is 20-50 micrometers.

2. The super-structure lens OLED light-emitting device of claim 1 wherein the first super-structure lens layer and the second super-structure lens layer are TiO ₂ Layer, gaN layer, si layer, siO ₂ Any of the layers.

3. The super-structure lens OLED light-emitting device of claim 1, wherein the thickness of the first super-structure lens layer and the second super-structure lens layer is 100-300nm.

4. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the sealing layer is Al ₂ O ₃ Layer, tiO ₂ Layer, siN layer, siO ₂ Any of the layers.

5. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the first substrate is a thin film transistor, TFT, silicon substrate.

6. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the second substrate is a TFT glass substrate.

7. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the anode layer includes a plurality of first bulk electrodes and the pixel electrode layer includes a plurality of second bulk electrodes, the plurality of first bulk electrodes and the plurality of second bulk electrodes being in one-to-one correspondence.

8. The super-structure lens OLED light-emitting device of claim 7 wherein the first plurality of bulk electrodes of the anode layer are electrically connected to transistors in the first substrate and the second plurality of bulk electrodes of the pixel electrode layer are electrically connected to transistors in the second substrate.

9. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the OLED structural layer is a white light OLED structural layer.

10. A super-structure lens OLED light-emitting device as claimed in any one of claims 1 to 3 wherein the OLED structural layer comprises:

and a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode layer which are sequentially laminated on the surface of the anode layer.