CN220283619U - Packaging structure - Google Patents
Packaging structure Download PDFInfo
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- CN220283619U CN220283619U CN202321339681.5U CN202321339681U CN220283619U CN 220283619 U CN220283619 U CN 220283619U CN 202321339681 U CN202321339681 U CN 202321339681U CN 220283619 U CN220283619 U CN 220283619U
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- buffer layer
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- package
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 36
- 239000004033 plastic Substances 0.000 claims abstract description 21
- 229920003023 plastic Polymers 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims 1
- 230000008859 change Effects 0.000 description 6
- 238000009423 ventilation Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a packaging structure, comprising: the base plate is used for mounting electronic components; the packaging shell is enclosed with the substrate to form a containing cavity, and the containing cavity is used for containing electronic components; the packaging shell comprises a first thermal buffer layer and a second thermal buffer layer which are distributed in a layered mode, wherein two of plastic, ceramic and metal are respectively made of the first thermal buffer layer and the second thermal buffer layer. According to the utility model, the materials of the first thermal buffer layer and the second thermal buffer layer are selected differently, so that the difference of the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer is changed, and correspondingly, the thermal conductivity of the whole packaging shell is between the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer.
Description
Technical Field
The present utility model relates to the field of heat dissipation of chips, and in particular, to a packaging structure.
Background
Electronic components such as chips, sensors, etc. typically need to be packaged together to function properly, e.g., MEMS sensors and ASIC chips need to be packaged together. The package can reduce the influence of factors such as dust, moisture, temperature change and the like in the external environment, provide mechanical support and protection for the electronic components in the package, provide leads and pins required for connection with other electronic components, and improve the integration level of the electronic components in the package.
With the continuous development of the fields of the internet of things, wearable equipment, implanted medical treatment and the like, the packaging and the electronic components inside the packaging are required to work in some severe environments, such as environments with extremely unstable temperature. However, MEMS sensors and some temperature sensitive chips are highly susceptible to temperature variations in the operating environment, resulting in accuracy of the detection results and some other functions being compromised.
One important reason for the rapid temperature rise inside the package in the prior art is that the heat outside the package is largely conducted to the inside of the package. In order to reduce the speed of temperature change inside the package, the package is generally made of a heat insulating material, so that the influence of heat outside the package on the temperature inside the package is reduced. However, the heat generated by the electronic components inside the package cannot be effectively conducted to the outside of the package, but the rapid rise of the temperature inside the package is boosted, so that the performance of the electronic components inside the package is reduced.
Based on the above analysis, how to reduce the temperature change rate inside the package, so as to reduce the influence of the temperature change rate on the performance of the electronic components inside the package, is a problem to be solved.
Disclosure of Invention
Accordingly, it is necessary to provide a package structure for the problem of rapid temperature change inside the package.
A package structure, comprising:
the base plate is used for mounting electronic components; and
The packaging shell is enclosed with the substrate to form a containing cavity, and the containing cavity is used for containing electronic components;
the packaging shell comprises a first thermal buffer layer and a second thermal buffer layer which are distributed in a layered mode, wherein two of plastic, ceramic and metal are respectively made of the first thermal buffer layer and the second thermal buffer layer.
The packaging shell further comprises a third thermal buffer layer, wherein the first thermal buffer layer, the third thermal buffer layer and the second thermal buffer layer are sequentially distributed in a layered mode, and the rest of plastic, ceramic and metal are made of the third thermal buffer layer.
At least one of the first thermal buffer layer and the second thermal buffer layer is spaced apart from the third thermal buffer layer.
In the utility model, the first thermal buffer layer is made of metal, the first thermal buffer layer is positioned at the outer side of the third thermal buffer layer, and the third thermal buffer layer is attached to the second thermal buffer layer.
In the utility model, the first thermal buffer layer and the second thermal buffer layer are arranged at intervals so that an air layer is formed between the first thermal buffer layer and the second thermal buffer layer.
The plastic is epoxy resin, polyimide or polyamide, and the ceramic is aluminum oxide, silicon oxide or zirconium nitride.
A package structure, comprising:
the base plate is used for mounting electronic components; and
The packaging shell is enclosed with the substrate to form a containing cavity, and the containing cavity is used for containing electronic components;
the package shell comprises a first thermal buffer layer and a second thermal buffer layer which are distributed in a layered mode, and the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer are different.
The thermal conductivity of the first thermal buffer layer is 1-10W/m -1 K -1 The thermal conductivity of the second thermal buffer layer is 100-200W x m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or (b)
The first thermal buffer layer has a thermal conductivity of 1-10W m -1 K -1 The thermal conductivity of the second thermal buffer layer is 400-700W x m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or (b)
The thermal conductivity of the first thermal buffer layer is 100-200W x m -1 K -1 The thermal conductivity of the second thermal buffer layer is 400-700W x m -1 K -1 。
The packaging shell further comprises a third thermal buffer layer, wherein the first thermal buffer layer, the third thermal buffer layer and the second thermal buffer layer are sequentially distributed in a layered mode, and the thermal conductivities of the first thermal buffer layer, the second thermal buffer layer and the third thermal buffer layer are different from each other in pairs.
The wall of the accommodating cavity is provided with the air holes.
The thickness of the packaging shell is D, and the thickness of the first thermal buffer layer is 0.1D-0.9D.
According to the utility model, the materials of the first thermal buffer layer and the second thermal buffer layer are selected differently, so that the difference of the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer is changed, and correspondingly, the thermal conductivity of the whole packaging shell is between the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer. Furthermore, by adjusting the thickness ratio of the first thermal buffer layer to the second thermal buffer layer, the thermal conductivity of the package can be continuously changed between the thermal conductivity of the first thermal buffer layer and the thermal conductivity of the second thermal buffer layer without changing the thickness of the package, so that the package can achieve a specific thermal conductivity target.
The packaging shell has moderate heat conductivity, and combines heat conduction and heat insulation properties. When the temperature outside the accommodating cavity is higher than the temperature inside the accommodating cavity, the packaging shell can properly slow down the speed of the heat outside the accommodating cavity to transfer to the accommodating cavity, so that the temperature rise speed in the accommodating cavity is reduced, and when the temperature inside the accommodating cavity is higher than the temperature outside the accommodating cavity, the heat inside the accommodating cavity can be conducted to the outer side of the accommodating cavity at a certain heat conduction speed, so that the temperature rise speed in the accommodating cavity is reduced.
Drawings
Fig. 1 is a schematic cross-sectional view of a package structure in embodiment 1 of the present utility model;
fig. 2 is a schematic cross-sectional view of a package structure in embodiment 6 of the present utility model;
fig. 3 is a schematic cross-sectional view of a package structure in embodiment 7 of the present utility model;
fig. 4 is a schematic cross-sectional view of a package structure in embodiment 8 of the present utility model.
Reference numerals:
1. a substrate; 2. packaging the shell; 21. a first thermal buffer layer; 22. a second thermal buffer layer; 23. a third thermal buffer layer; 3. a receiving chamber; 31. ventilation holes; 4. an electronic component; 41. a sensor; 42. and a chip.
Detailed Description
In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below.
In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present utility model, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present utility model, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Example 1:
referring to fig. 1, the present embodiment provides a package structure including a substrate 1 and a package case 2.
The upper surface of the substrate 1 is mounted with a number of electronic components 4, such as a sensor 41 and a chip 42, the sensor 41 and the chip 42 being electrically connected by wires. The package 2 and the substrate 1 are enclosed to form a containing cavity 3, so that all electronic components 4 are located in the containing cavity 3, and a package structure is formed.
If the package 2 has extremely strong heat conducting capability, when the temperature outside the accommodating cavity 3 is higher than the temperature inside, the heat outside the accommodating cavity 3 can be quickly conducted into the package 2 through the package 2, so that the temperature inside the package 2 is quickly increased, and the working performance of the electronic component 4 is reduced.
If the package 2 has a very strong heat-insulating capability, heat generated by the electronic component 4 will accumulate in the accommodating cavity 3, which also causes a rapid increase in the temperature inside the package 2, and reduces the workability of the electronic component 4.
The present embodiment aims to obtain a package 2 having a moderate thermal conductivity, in which, in the case where the thickness of the package 2 is fixed, the package 2 can appropriately slow down the rate of transfer of the heat outside the accommodating chamber 3 to the accommodating chamber 3 when the temperature outside the accommodating chamber 3 is higher than the temperature inside the accommodating chamber 3, thereby reducing the rate of temperature rise in the accommodating chamber 3, and when the temperature inside the accommodating chamber 3 is higher than the temperature outside the accommodating chamber 3, the heat inside the accommodating chamber 3 can be conducted to the outside of the accommodating chamber 3 at a certain rate of heat conduction, thereby reducing the rate of temperature rise in the accommodating chamber 3. I.e. the enclosure 2 needs to meet a moderate thermal conductivity target to achieve both thermal conductivity and thermal insulation properties.
It can be understood that the thermal conductivities of different materials are different and often have large differences, and if the package 2 needs to achieve a specific thermal conductivity target, it is often difficult to directly find the corresponding materials for manufacturing.
Based on this, the package 2 of the present embodiment includes at least the first thermal buffer layer 21 and the second thermal buffer layer 22 distributed in layers. Two of the plastic, ceramic and metal are materials of the first thermal buffer layer 21 and the second thermal buffer layer 22, respectively. For example, the first thermal buffer layer 21 is made of plastic, the second thermal buffer layer 22 is made of ceramic, or the first thermal buffer layer 21 is made of metal, the second thermal buffer layer 22 is made of plastic, or other similar materials. By differently selecting the materials of the first thermal buffer layer 21 and the second thermal buffer layer 22, the thermal conductivities of the first thermal buffer layer 21 and the second thermal buffer layer 22 are differentiated, and accordingly, the thermal conductivity of the whole package 2 is between the thermal conductivities of the first thermal buffer layer 21 and the second thermal buffer layer 22. Further, by adjusting the thickness ratio of the first thermal buffer layer 21 and the second thermal buffer layer 22, the thermal conductivity of the package 2 can be continuously changed between the thermal conductivity of the first thermal buffer layer 21 and the thermal conductivity of the second thermal buffer layer 22 without changing the thickness of the package 2, so that the package 2 achieves a specific thermal conductivity target. For example, the thickness of the package can 2 is D, where D is a constant value, and the thickness of the first thermal buffer layer 21 may be selected within the range of 0.1D to 0.9D, and when the thickness of the first thermal buffer layer 21 is changed, the thickness of the second thermal buffer layer 22 is also changed, and thus the thickness ratio of the first thermal buffer layer 21 to the second thermal buffer layer 22 is also changed.
Preferably, the package 2 further includes a third thermal buffer layer 23, the first thermal buffer layer 21, the third thermal buffer layer 23 and the second thermal buffer layer 22 are sequentially layered, the first thermal buffer layer 21 and the third thermal buffer layer 23 are attached, the third thermal buffer layer 23 and the second thermal buffer layer 22 are attached, two of plastic, ceramic and metal are respectively materials of the first thermal buffer layer 21 and the second thermal buffer layer 22, and the other is a material of the third thermal buffer layer 23.
Among plastics, ceramics and metals, the plastics generally have the lowest thermal conductivity of 1-10 W.times.m -1 K -1 Can be one or more of epoxy resin, polyimide or polyamide, and the metal has the highest heat conductivity of 400-700W m -1 K -1 The metal of the embodiment is not limited to metal simple substance, but can be a composite material containing metal, and the thermal conductivity of the ceramic is generally between plastic and metal and is 100-200W m -1 K -1 Can be one or a mixture of several of aluminum oxide, silicon oxide or zirconium nitride.
The first thermal buffer layer 21, the second thermal buffer layer 22 and the third thermal buffer layer 23 make the package 2 have both plastic and metal materials, so that the thermal conductivity of the package 2 is between the plastic and the metal.
The first thermal buffer layer 21 and the second thermal buffer layer 22 are made of plastic or metal. Without the third thermal buffer layer 23, the thickness ratio of the first thermal buffer layer 21 and the second thermal buffer layer 22 is changed to easily cause the thermal conductivity of the package 2 to change more severely, so that fine adjustment of the thermal conductivity of the package 2 is difficult. In the embodiment, under the action of the third thermal buffer layer 23 made of ceramic material, the sensitivity of the thermal conductivity of the package shell 2 to the thickness ratio variation of the first thermal buffer layer 21 and the second thermal buffer layer 22 is reduced, which is more beneficial to improving the thermal conductivity adjustment precision of the package shell 2.
Example 2:
the difference between this embodiment and embodiment 1 is that the materials of the first thermal buffer layer, the second thermal buffer layer, and the third thermal buffer layer are not limited to plastics, ceramics, and metals, but are distinguished by thermal conductivities, that is, the thermal conductivities of the first thermal buffer layer, the second thermal buffer layer, and the third thermal buffer layer are different from each other. The order in which the first thermal buffer layer, the second thermal buffer layer, and the third thermal buffer layer are layered is not particularly limited.
For example, the thermal conductivity of the first thermal buffer layer is 1-10 W.times.m -1 K -1 The thermal conductivity of the second thermal buffer layer is 100-200W m -1 K -1 A third thermal buffer layerThermal conductivity of 400-700 W.times.m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or the thermal conductivity of the first thermal buffer layer 21 is 1-10W/m -1 K -1 The thermal conductivity of the second thermal buffer layer 22 is 400-700w x m -1 K -1 The thermal conductivity of the third thermal buffer layer is 100-200W m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or the thermal conductivity of the first thermal buffer layer 21 is 100-200W x m -1 K -1 The thermal conductivity of the second thermal buffer layer 22 is 400-700w x m -1 K -1 The thermal conductivity of the third thermal buffer layer is 1-10W m -1 K -1 。
Example 3:
the present embodiment differs from embodiments 1 and 2 in that the third thermal buffer layer is not provided, and the first thermal buffer layer and the second thermal buffer layer are disposed apart from each other so that an air layer is formed between the first thermal buffer layer and the second thermal buffer layer. The air is used as a medium with moderate heat conductivity, so that heat in the accommodating cavity can be allowed to be conducted to the outside of the accommodating cavity, and the rate of conducting the heat outside the accommodating cavity to the inside of the accommodating cavity can be reduced, and the temperature rise speed in the accommodating cavity is restrained. In the embodiment, the air layer replaces the third thermal buffer layer, so that the production cost of the packaging structure is reduced.
Example 4:
the present embodiment differs from embodiments 1 and 2 in that the third thermal buffer layer is located between the first thermal buffer layer and the second thermal buffer layer, and the first thermal buffer layer and the second thermal buffer layer are each disposed apart from the third thermal buffer layer so that an air layer is formed between the first thermal buffer layer and the third thermal buffer layer, and between the second thermal buffer layer and the third thermal buffer layer.
Example 5:
the difference between the present embodiment and embodiment 1 is that the material of the first thermal buffer layer is metal, and the material of the corresponding third thermal buffer layer and the material of the second thermal buffer layer are ceramic and plastic. The first thermal buffer layer is positioned on the outer side of the third thermal buffer layer, and the packaging shell obtains good mechanical properties through the first thermal buffer layer made of metal materials, so that the electronic components in the packaging shell are well protected.
The first thermal buffer layer and the third thermal buffer layer of the present embodiment are spaced apart such that an air layer is formed between the first thermal buffer layer and the third thermal buffer layer. The third thermal buffer layer is attached to the second thermal buffer layer so as to achieve a supporting effect on the plastic through the ceramic, and therefore thermal deformation of the plastic is reduced.
Example 6:
referring to fig. 2, this embodiment is different from embodiments 1 and 2 in that there are two packages 2, which are named first and second packages, respectively, for convenience of distinction.
The upper surface of the substrate 1 is provided with a sensor 41 and a chip 42, a first package cover is covered on the sensor 41, and a second package cover is covered on the chip 42 and the first package cover at the same time. Correspondingly, the accommodating cavity formed by the first packaging shell and the substrate 1 is positioned in the accommodating cavity formed by the second packaging shell and the substrate 1. Wherein the first package shell is provided with ventilation holes 31 to enable the two accommodating cavities to be communicated.
Example 7:
referring to fig. 3, this embodiment is different from embodiments 1 and 2 in that there are two packages 2, which are named first and second packages, respectively, for convenience of distinction.
The upper surface of the substrate 1 is provided with a sensor 41 and a chip 42, a first package cover is covered on the chip 42, and a second package cover is covered on the sensor 41 and the first package cover at the same time. Correspondingly, the accommodating cavity formed by the first packaging shell and the substrate 1 is positioned in the accommodating cavity formed by the second packaging shell and the substrate 1. Wherein the first package shell is provided with ventilation holes 31 to enable the two accommodating cavities to be communicated.
Example 8:
referring to fig. 4, this embodiment is different from embodiments 1 and 2 in that the package 2 has three packages, which are named as a first package, a second package, and a third package, respectively, for convenience of distinction.
The upper surface of the base plate 1 is provided with a sensor 41 and a chip 42, a first packaging shell cover is combined on the sensor 41, a second packaging shell cover is combined on the chip 42, a third packaging shell is simultaneously covered on the first packaging shell and the second packaging shell, and ventilation holes 31 are formed in the first packaging shell and the second packaging shell.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.
Claims (10)
1. A package structure, comprising:
the base plate is used for mounting electronic components; and
The packaging shell is enclosed with the substrate to form a containing cavity, and the containing cavity is used for containing electronic components;
the packaging shell comprises a first thermal buffer layer and a second thermal buffer layer which are distributed in a layered mode, wherein two of plastic, ceramic and metal are respectively made of the first thermal buffer layer and the second thermal buffer layer.
2. The package structure of claim 1, wherein the package further comprises a third thermal buffer layer, the first thermal buffer layer, the third thermal buffer layer, and the second thermal buffer layer are sequentially layered, and the remaining one of plastic, ceramic, and metal is a material of the third thermal buffer layer.
3. The package structure of claim 2, wherein at least one of the first thermal buffer layer and the second thermal buffer layer is spaced apart from the third thermal buffer layer.
4. The package structure of claim 3, wherein the first thermal buffer layer is made of metal, the first thermal buffer layer is located outside the third thermal buffer layer, and the third thermal buffer layer is attached to the second thermal buffer layer.
5. The package structure according to claim 1, wherein the first thermal buffer layer and the second thermal buffer layer are spaced apart such that an air layer is formed between the first thermal buffer layer and the second thermal buffer layer.
6. The package structure of claim 1, wherein the plastic is epoxy, polyimide, or polyamide, and the ceramic is aluminum oxide, silicon oxide, or zirconium nitride.
7. A package structure, comprising:
the base plate is used for mounting electronic components; and
The packaging shell is enclosed with the substrate to form a containing cavity, and the containing cavity is used for containing electronic components;
the package shell comprises a first thermal buffer layer and a second thermal buffer layer which are distributed in a layered mode, and the thermal conductivities of the first thermal buffer layer and the second thermal buffer layer are different.
8. The package structure of claim 7, wherein,
the first thermal buffer layer has a thermal conductivity of 1-10W m -1 K -1 The thermal conductivity of the second thermal buffer layer is 100-200W x m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or (b)
The first thermal buffer layer has a thermal conductivity of 1-10W m -1 K -1 The thermal conductivity of the second thermal buffer layer is 400-700W x m -1 K -1 The method comprises the steps of carrying out a first treatment on the surface of the Or (b)
The thermal conductivity of the first thermal buffer layer is 100-200W x m -1 K -1 The thermal conductivity of the second thermal buffer layer is 400-700W x m -1 K -1 。
9. The package structure of claim 7, wherein the package further comprises a third thermal buffer layer, the first thermal buffer layer, the third thermal buffer layer, and the second thermal buffer layer are sequentially layered, and the thermal conductivities of the first thermal buffer layer, the second thermal buffer layer, and the third thermal buffer layer are different from each other.
10. The package structure of claim 1, wherein the thickness of the package is D and the thickness of the first thermal buffer layer is 0.1D-0.9D.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321339681.5U CN220283619U (en) | 2023-05-29 | 2023-05-29 | Packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321339681.5U CN220283619U (en) | 2023-05-29 | 2023-05-29 | Packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220283619U true CN220283619U (en) | 2024-01-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202321339681.5U Active CN220283619U (en) | 2023-05-29 | 2023-05-29 | Packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220283619U (en) |
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2023
- 2023-05-29 CN CN202321339681.5U patent/CN220283619U/en active Active
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