CN220208968U

CN220208968U - Low-voltage high-current field effect transistor module

Info

Publication number: CN220208968U
Application number: CN202321754498.1U
Authority: CN
Inventors: 周钰; 万志兵
Original assignee: Shenzhen Zhouli Electronic Technology Co ltd
Current assignee: Shenzhen Zhouli Electronic Technology Co ltd
Priority date: 2023-07-05
Filing date: 2023-07-05
Publication date: 2023-12-19
Anticipated expiration: 2033-07-05

Abstract

The utility model discloses a low-voltage high-current field effect tube module, which comprises: the field effect tube is a low-voltage high-current field effect tube; the field effect transistor is formed by a field effect transistor Q ₁ Field effect transistor Q ₂ Constructing; the field effect transistor Q ₁ The field effect transistor Q ₂ Are respectively positioned above and below the double-sided board, and the field effect tube Q ₁ The field effect transistor Q ₂ Parallel connection and D pole sharing; the maximum current of the low-voltage high-current field effect transistor module is equal to the field effect transistor Q ₁ Field effect transistor Q ₂ And the sum of the currents. The utility model is thatBy connecting two low-voltage high-current field effect transistors in parallel and sharing a D pole, the low-voltage high-current field effect transistor module is designed, so that the maximum low-voltage current of the module is greatly improved, and the problem that the application of the low-voltage high-current field effect transistor is limited by technology is solved.

Description

Low-voltage high-current field effect transistor module

Technical Field

The utility model relates to the field of field effect transistor modules, in particular to a low-voltage high-current field effect transistor module.

Background

At present, electric automobiles are popular, so that the application and the manufacture of the charging pile are widely used, the application of the low-voltage high-current field effect transistor is wider and wider, but the application is limited by technology, the maximum low-voltage high-current can only be 300A, and the maximum low-voltage high-current can not be larger, so that the application of the low-voltage high-current field effect transistor module is severely restricted.

Disclosure of Invention

The utility model aims to provide a low-voltage high-current field effect transistor module so as to solve the problem that the current maximum low-voltage high-current field effect transistor module can only achieve 300A.

The utility model provides a low-voltage high-current field effect tube module, which comprises: the field effect tube is a low-voltage high-current field effect tube;

the field effect transistor is formed by a field effect transistor Q ₁ Field effect transistor Q ₂ Constructing; the field effect transistor Q ₁ The field effect transistor Q ₂ Are respectively positioned above and below the double-sided board, and the field effect tube Q ₁ The field effect transistor Q ₂ And D poles are connected in parallel and are shared.

Further, the low-voltage high-current field effect transistor is a 100V300A field effect transistor.

Further, a plurality of holes are formed in the double-sided board, and the holes are used for conducting electricity of the D pole to dissipate heat.

Further, the low-voltage high-current field effect transistor module further comprises a shell, and the field effect transistor Q ₁ Field effect transistor Q ₂ The double-sided board is positioned in the shell, and the D pin and the S pin are led out from the shell ₁ 、G ₁ 、S ₂ 、G ₂ And (3) feet.

Further, a copper sheet is arranged at the bottom of the shell, and the copper sheet is connected with two pins of the D pole.

Further, the copper sheet area is at least 9 x 9mm.

Further, the field effect transistor Q ₁ Field effect transistor Q ₂ FBDL0200N100, both onsemi.

According to the utility model, two low-voltage high-current field effect transistors are connected in parallel and share the D pole, so that the low-voltage high-current field effect transistor module is designed, the maximum low-voltage current of the module is greatly improved, and the problem that the application of the low-voltage high-current field effect transistor is limited by technology is solved.

Drawings

FIG. 1 is a schematic diagram of a low voltage high current FET module according to the present utility model;

FIG. 2 is a schematic diagram of a low voltage high current FET module (without a housing) according to the present utility model;

FIG. 3 is a schematic side view of FIG. 2;

fig. 4 is an external view of a low-voltage high-current fet module according to the present utility model.

1. A double-sided board; 2. a housing.

Detailed Description

In order that those skilled in the art will better understand the present utility model, a technical solution in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.

The embodiment of the utility model discloses a low-voltage high-current field effect tube module, which comprises: the field effect tube is a low-voltage high-current field effect tube;

the field effect transistor is formed by a field effect transistor Q ₁ Field effect transistor Q ₂ Constructing; as shown in fig. 2, the field effect transistor Q ₁ The field effect transistor Q ₁ Respectively positioned on the double-sided board 1Face and below. As shown in fig. 1, the field effect transistor Q ₁ The field effect transistor Q ₂ And D poles are connected in parallel and are shared.

Specifically, a field effect transistor Q, is disposed above and below the double-sided board 1 ₁ When positioned on the upper surface, the field effect transistor Q ₂ Located under the double-sided board 1 and vice versa, the field effect transistor Q ₁ Field effect transistor Q ₂ Which is not specified above and which is not specified below, field effect transistor Q ₁ G of (2) ₁ 、S ₁ Foot field effect tube Q ₂ G of (2) ₂ 、S ₂ The feet face the same direction, the field effect tube Q ₁ The field effect transistor Q ₂ After the parallel connection and the common D pole, the maximum current of the low-voltage high-current field effect transistor module is equal to the maximum current of the field effect transistor Q ₁ Field effect transistor Q ₂ And the sum of the currents.

According to the embodiment of the utility model, the two low-voltage high-current field effect transistors are connected in parallel and share the D electrode, so that the low-voltage high-current field effect transistor module is designed, the maximum low-voltage current of the module is greatly improved, and the problem that the application of the low-voltage high-current field effect transistor is limited by technology is solved.

Optionally, the low-voltage high-current field effect transistor is a 100V300A field effect transistor.

Specifically, field effect transistor Q ₁ The field effect transistor Q ₂ The voltage and current limit of (1) is 100VDSS300A, when the FET Q ₁ The field effect transistor Q ₂ After the pins D are connected in parallel and shared, the effect of 100V600A is achieved by the field effect tube module.

The structure of the embodiment of the utility model greatly improves the maximum low-voltage current of the field effect transistor module, breaks through the technical limit that the maximum low-voltage large current can only reach 300A, and can enlarge the application range.

Optionally, a plurality of holes are formed on the double-sided board 1, and the holes are used for D-pole conduction to dissipate heat.

Specifically, the drilling holes are positioned at one end of the D pole, and a plurality of drilling holes are arranged according to the requirement, or can be arranged in an array.

According to the embodiment of the utility model, after the drilling is arranged at one end of the D pole of the double-sided board 1, heat is emitted when the field effect tube works, so that damage to the field effect tube caused by overhigh heat is avoided, and the service life of the field effect tube is prolonged.

Optionally, the low-voltage high-current field effect transistor module further comprises a housing 2, and the field effect transistor Q ₁ Field effect transistor Q ₂ A double-sided board 1 is positioned in the shell 2, the S ₁ 、G ₁ 、S ₂ 、G ₂ And D, leading out the shell.

Specifically, as shown in fig. 4, the casing 2 is provided with a plurality of through holes, and the through holes respectively correspond to the field effect pins D and S ₁ Foot, G ₁ Foot, S ₂ Foot, G ₂ Foot, S ₁ 、G ₁ 、S ₂ 、G ₂ The D pin leading-out shell penetrates through the shell and is exposed outside the shell.

Preferably, a copper sheet is installed at the bottom of the shell 2, and the copper sheet is connected with two pins of the D pole.

Wherein the copper sheet area is at least 9 x 9mm.

Specifically, the copper sheet is installed near the bottom of the field effect module housing 2 and is connected with two pins of the D pole at the same time, and is used for being installed on a main board PCB, and a heat dissipation pad on the PCB is welded so as to facilitate heat dissipation.

Optionally, the field effect transistor Q ₁ Field effect transistor Q ₂ FBDL0200N100, both onsemi.

Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present utility model and not for limiting the same, and although the present utility model has been described in detail with reference to the above-mentioned embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made to the specific embodiments of the present utility model after reading the present specification, and these modifications and variations do not depart from the scope of the utility model as claimed in the pending claims.

Claims

1. A low voltage high current field effect transistor module, the low voltage high current field effect transistor module comprising: the field effect tube is a low-voltage high-current field effect tube;

2. The low voltage high current fet module of claim 1 wherein said low voltage high current fet is a 100V300A fet.

3. The low voltage high current fet module of claim 2 wherein said double sided board has a plurality of holes for D-pole conduction and heat dissipation.

4. The low-voltage high-current fet module of claim 2 further comprising a housing, said fet Q ₁ Field effect transistor Q ₂ The double-sided board is positioned in the shell, and the D pin and the S pin are led out from the shell ₁ 、G ₁ 、S ₂ 、G ₂ And (3) feet.

5. The low voltage high current fet module of claim 4 wherein said housing bottom is fitted with copper sheets connected to two pins of said D pole.

6. The low voltage high current fet module of claim 5 wherein said copper sheet has an area of at least 9 x 9mm.

7. A low voltage high current fet module as claimed in any one of claims 1 to 6 wherein said fet Q ₁ Field effect transistor Q ₂ FBDL0200N100, both onsemi.