CN220208025U - Optical modulator and optoelectronic integrated chip - Google Patents
Optical modulator and optoelectronic integrated chip Download PDFInfo
- Publication number
- CN220208025U CN220208025U CN202321625831.9U CN202321625831U CN220208025U CN 220208025 U CN220208025 U CN 220208025U CN 202321625831 U CN202321625831 U CN 202321625831U CN 220208025 U CN220208025 U CN 220208025U
- Authority
- CN
- China
- Prior art keywords
- type
- region
- type region
- optical modulator
- doping level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 95
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001965 increasing effect Effects 0.000 abstract description 11
- 230000000670 limiting effect Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application discloses an optical modulator and an optoelectronic integrated chip, wherein the optical modulator comprises a rib waveguide, and the rib waveguide comprises a ridge part, a first flat plate part and a second flat plate part which are respectively positioned at two opposite sides of the ridge part; the ridge has a P-type doped region of a first P-type doping level and an N-type doped region of a first N-type doping level, the P-type doped region and the N-type doped region being connected at the ridge to form a depletion region at the ridge, which aims to improve the modulation performance of the optical modulator by optimizing the structure of the slab portions on both sides of the rib waveguide. By adopting the technical scheme provided by the application, the optical field limiting effect can be achieved, the modulation efficiency is improved, and the series resistance of the optical modulator can be reduced on the premise that the extra optical loss is not increased, so that the electro-optical bandwidth of the optical modulator is increased, and the performance of a product is improved.
Description
Technical Field
The present disclosure relates to the field of optical communications technologies, and in particular, to an optical modulator and an optoelectronic integrated chip.
Background
An optical modulator is one of the core devices of on-chip optical logic, optical interconnects, and optical processors for converting radio frequency electrical signals into high-speed optical signals. It can form a complete functional network with lasers, detectors and other wavelength division multiplexing devices.
Three existing indicators for evaluating the performance of an optical modulator are: 1) Loss of the material; 2) An electro-optic bandwidth; 3) Modulation efficiency; because the electro-optic bandwidth of the injection modulator is low, the general bandwidth is in the order of GHz, and the electro-optic bandwidth of the depletion modulator is high and can reach more than 50GHz, in high-speed modulation scenes, such as the optical modulator of a high-speed optical module, the depletion modulator is generally adopted. The improvement in electro-optic bandwidth of current silicon-based carrier-depleted optical modulators depends largely on the junction capacitance of the PN junction and the magnitude of the series resistance carried by the transmitting electrode. Since the junction capacitance of the PN junction is closely related to the modulation efficiency of the optical modulator, it is generally difficult to reduce. The resistance of the series resistor can be reduced by properly increasing the doping concentration of the slab (slab) region or reducing the distance between the medium and high doping and the edge of the optical waveguide.
However, increasing the doping concentration of the slab (sleb) region or decreasing the distance between the medium and high doping and the edge of the optical waveguide increases the optical loss of the optical modulator more or less. The electro-optic bandwidth of silicon-based optical modulators is particularly challenging in the next generation of single-wave 100Gbaud and beyond applications.
Therefore, how to increase the electro-optical bandwidth as much as possible and reduce the extra optical loss as much as possible is an important problem to be solved.
Disclosure of Invention
An objective of the present application is to provide an optical modulator and an optoelectronic integrated chip, so as to solve the problems existing in the prior art.
According to an aspect of the present application, an embodiment of the present application provides an optical modulator, including:
a rib waveguide including a ridge portion and first and second slab portions respectively located on opposite sides of the ridge portion; the ridge is provided with a P-type doping region with a first P-type doping level and an N-type doping region with a first N-type doping level, the P-type doping region and the N-type doping region are connected at the ridge to form a depletion region positioned at the ridge, and the depletion region is distributed in a modulation section of the ridge positioned in the optical modulator;
a P-type electrode contact region and an N-type electrode contact region, the P-type electrode contact region being connected to a side of the first plate portion relatively far from the ridge portion, the N-type electrode contact region being connected to a side of the second plate portion relatively far from the ridge portion;
the first flat plate part at least comprises a first P-type region with a second P-type doping level and a second P-type region with a third P-type doping level, one side of the first P-type region is connected with the P-type doping region of the ridge part, and the other side of the first P-type region is connected with the second P-type region; the third P-type doping level is greater than the second P-type doping level, which is greater than or equal to the first P-type doping level;
the second plate part at least comprises a first N-type region with a second N-type doping level and a second N-type region with a third N-type doping level, one side of the first N-type region is connected with the N-type doping region of the ridge part, and the other side of the first N-type region is connected with the second N-type region; the third N-type doping level is greater than the second N-type doping level, which is greater than or equal to the first N-type doping level;
and the thickness of the second P-type region is smaller than that of the first P-type region in the thickness direction of the rib waveguide, and the thickness of the second N-type region is smaller than that of the first N-type region.
In some embodiments, the ridge has a first cross-sectional height H1 and the first P-type region has a second cross-sectional height H2 in the thickness direction of the rib waveguide, wherein,
in some embodiments, the second P-type region has a third cross-sectional height H3 in a thickness direction of the rib waveguide, wherein,
in some embodiments of the present utility model, in some embodiments,
150nm≤H1≤500nm。
in some embodiments, the first P-type region and the first N-type region have equal cross-sectional heights in a thickness direction of the rib waveguide.
In some embodiments, the second N-type region and the second P-type region have equal cross-sectional heights in a thickness direction of the rib waveguide.
In some embodiments, the ridge has a first cross-sectional width W1 in a direction perpendicular to the thickness of the rib waveguide;
wherein,
200nm≤W1≤500nm。
in some embodiments, the first P-type region has a second cross-sectional width W2, the first N-type region has a third cross-sectional width W3,
wherein,
50nm≤W2≤400nm；
50nm≤W3≤400nm。
in some embodiments, the second P-type region has a fourth cross-sectional width W4 and the second N-type region has a fifth cross-sectional width W5 in a direction perpendicular to the thickness of the rib waveguide;
wherein,
50nm≤W4≤1000nm；
50nm≤W5≤1000nm。
in some embodiments, the first plate portion further includes a third P-type region having a fourth P-type doping level, the third P-type region being located between the second P-type region and the P-type electrode contact region; the second plate part further comprises a third N-type region with a fourth N-type doping level, and the third N-type region is positioned between the second N-type region and the N-type electrode contact region; wherein the fourth P-type doping level is greater than the third P-type doping level and less than or equal to the doping level of the P-type electrode contact region; the fourth N-type doping level is greater than the third N-type doping level and is less than or equal to the doping level of the N-type electrode contact region;
the thickness of the third P-type region is larger than that of the second P-type region, and the thickness of the third N-type region is larger than that of the second N-type region.
In some embodiments, the third P-type region and the third N-type region each have a fourth cross-sectional height H4 in a thickness direction of the rib waveguide, wherein H3< H4+.h1.
According to another aspect of the present application, an embodiment of the present application provides an optoelectronic integrated chip employing the method of any one of the embodiments of the present application.
In some embodiments, the optoelectronic integrated chip is a silicon-based photonic chip, the silicon-based photonic chip includes a silicon substrate layer, an oxygen-buried layer, and an optical device layer that are sequentially stacked, and the optical modulator is disposed on the optical device layer.
The embodiment of the application provides an optical modulator and an optoelectronic integrated chip, wherein the optical modulator comprises a rib waveguide, and the rib waveguide comprises a ridge part, a first flat plate part and a second flat plate part which are respectively positioned at two opposite sides of the ridge part; the ridge is provided with a P-type doped region with a first P-type doping level and an N-type doped region with a first N-type doping level, the P-type doped region is connected with the N-type doped region at the ridge to form a depletion region positioned at the ridge, the depletion region is distributed in a modulation section of the ridge positioned in the optical modulator, the modulation performance of the optical modulator is improved by optimizing the structures of flat plate parts at two sides of the rib waveguide, the light loss of the optical field due to light scattering by side walls formed by etching of the rib waveguide is reduced as much as possible while the modulation efficiency is improved, and the modulation bandwidth is improved as much as possible, so that the limiting effect on the optical field is achieved, the modulation efficiency is improved, the series resistance of the optical modulator is reduced on the premise that the extra optical loss is not increased, the electro-optic bandwidth of the optical modulator is enlarged, and the performance of a product is improved.
Drawings
Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional structure of an optical modulator according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional structure of an optoelectronic integrated chip according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed.
Fig. 1 is a schematic cross-sectional structure of an optical modulator according to an embodiment of the present application.
Referring to fig. 1, an embodiment of the present application provides an optical modulator 100, which includes:
a rib waveguide 101, the rib waveguide 101 including a ridge portion 10 and first and second slab portions 210 and 220 located on opposite sides of the ridge portion 10, respectively; the ridge 10 has a P-type doped region with a first P-type doping level and an N-type doped region with a first N-type doping level, the P-type doped region and the N-type doped region are connected to form a depletion region located in the ridge 10, and the depletion region is distributed in a modulation section of the ridge located in the optical modulator;
a P-type electrode contact region 41 and an N-type electrode contact region 42, the P-type electrode contact region 41 being connected to a side of the first flat plate portion 210 relatively far from the ridge portion 10, the N-type electrode contact region 42 being connected to a side of the second flat plate 220 relatively far from the ridge portion 10;
the first plate portion 210 at least includes a first P-type region 211 having a second P-type doping level and a second P-type region 212 having a third P-type doping level, one side of the first P-type region 211 is connected to the P-type doping region of the ridge 10, and the other side is connected to the second P-type region 212; the third P-type doping level is greater than the second P-type doping level, which is greater than or equal to the first P-type doping level;
the second plate portion 220 at least includes a first N-type region 221 having a second N-type doping level and a second N-type region 222 having a third N-type doping level, one side of the first N-type region 221 is connected to the N-type doping region of the ridge 10, and the other side is connected to the second N-type region 222; the third N-type doping level is greater than the second N-type doping level, which is greater than or equal to the first N-type doping level;
wherein, in the thickness direction of the rib waveguide 101, the thickness of the second P-type region 212 is smaller than the thickness of the first P-type region 211, and the thickness of the second N-type region 222 is smaller than the thickness of the first N-type region 221.
The optical modulator in the present application is a depletion optical modulator, the rib waveguide 101 of which covers the ridge 10 and the first plate portion 210 and the second plate portion 220 on both sides of the ridge 10, and the P-type doped region and the N-type doped region of the rib waveguide are connected at the ridge 10 to form a PN junction, and a depletion region is formed along the PN junction. In operation, a reverse voltage is applied to extract carriers, the middle depletion region increases, and the optical refractive index changes, thereby forming a modulation. The waveguide region of the injection optical modulator is not doped, forward voltage is applied during operation, carriers are injected into the waveguide, and the optical refractive index is changed, so that modulation is formed.
In the embodiment of the present application, about 99% or more of the light is concentrated in the ridge 10 and the first P-type region and the second P-type region on both sides of the ridge 10.
The modulation performance of the optical modulator is improved by optimizing the structure of the slab portions on both sides of the rib waveguide. And deep etching is carried out on a second P-type region and a second N-type region which are at a certain distance from the side wall of the ridge part of the flat plate part, so that the constraint capacity of the rib waveguide on the light field transmitted in the waveguide is enhanced, and the modulation efficiency is improved. Moreover, the first P-type region and the first N-type region, which are close to the ridge, of the flat plate parts at the two sides of the rib waveguide can be kept to be the flat plate height of the conventional rib waveguide, so that the problem of roughness of the side walls formed by deep etching at the two sides of the ridge is reduced, the formation of extra optical loss is avoided, and meanwhile, the increase of the series resistance of the waveguide region near the ridge is avoided, so that the improvement of the modulation bandwidth is facilitated. Not only can play a role in limiting the optical field so as to increase the modulation efficiency; and the series resistance of the optical modulator can be reduced by increasing the doping concentration of the second P-type region and the second N-type region on the premise of not increasing the optical loss, so that the electro-optic bandwidth of the optical modulator is increased.
Illustratively, in embodiments of the present application, the doping levels of the ridge 10, the first P-type region 211, and the first N-type region 221 are the same, and may be generally about 1e 17 ～5e 18 /cm 3 The doping levels of the second P-type region 212 and the second N-type region 222 are the same, and may be about 1e 18 ～5e 19 /cm 3 Higher doping levels can introduce larger carrier concentration variations in the PN junction interface, thereby facilitating modulation of the refractive index of the optical modulator, i.e., with higher modulation efficiency. It should be appreciated that in some embodiments, the doping level of the ridge 10 may also be set to slightly differ from the doping levels of the first P-type region 211 and the first N-type region 221 connected thereto. The application is not limited herein.
Further, in the thickness direction of the rib waveguide 101, the ridge 10 has a first sectional height H1, the first P-type region 211 has a second sectional height H2, wherein,
in some embodiments, the second P-type region 212 has a third cross-sectional height H3 in the thickness direction of the rib waveguide 101, wherein,
that is, a first P-type region 211 and a second P-type region 212 with a gradient change in cross-section height are formed on one side of the ridge 10, a first N-type region 221 and a second N-type region 222 with a gradient change in cross-section height are formed on the other side of the ridge 10, and the second P-type region 212 and the second N-type region 222 spaced apart from the side wall of the ridge 10 are deep etched to enhance the confinement capability of the rib waveguide 101 to the optical field transmitted in the waveguide, thereby enhancing the modulation efficiency. And simultaneously, the series resistance of the whole optical modulator can be reduced by combining the difference of doping concentrations of the doping bodies in the second P-type region 212 and the first P-type region 211 and the difference of doping concentrations of the doping bodies in the second N-type region 222 and the first N-type region 221.
In some embodiments of the present utility model, in some embodiments,
150nm≤H1≤500nm。
further, in the thickness direction of the rib waveguide 101, the first P-type region 211 and the first N-type region 221 have the same cross-sectional height.
Further, in the thickness direction of the rib waveguide 101, the second N-type region 212 and the second P-type region 222 have the same cross-sectional height.
Further, the ridge 10 has a first cross-sectional width W1 in a thickness direction perpendicular to the rib waveguide 101; wherein,
200nm≤W1≤500nm。
so that the optical field can be limited to ensure the modulation efficiency of the optical modulator.
Further, in the thickness direction perpendicular to the rib waveguide 101, the first P-type region 211 has a second cross-sectional width W2, the first N-type region 221 has a third cross-sectional width W3, that is, the deep etched second P-type region and the second N-type region are respectively spaced apart from the sidewalls W2 and W3 of the ridge 10, so that the series resistance of the waveguide region near the ridge 10 is not increased, and the series resistance of the slab region can be reduced by increasing the doping concentration of the deep etched region to increase the modulation bandwidth, and the doped region is relatively far from the ridge 10, so that no additional optical loss is added.
Wherein,
50nm≤W2≤400nm；
50nm≤W3≤400nm。
in some embodiments, the first P-type region 211 and the first N-type region 221 may have the same cross-sectional width in a direction perpendicular to the thickness direction of the rib waveguide 101, that is, the first P-type region 211 and the first N-type region 221 are symmetrically disposed with respect to the ridge 10.
In some other embodiments, the first P-type region 211 and the first N-type region 221 may have different cross-sectional widths in a direction perpendicular to the thickness direction of the rib waveguide 101, which is not limited herein.
Further, in a thickness direction perpendicular to the rib waveguide 101, the second P-type region 212 has a fourth cross-sectional width W4, and the second N-type region 222 has a fifth cross-sectional width W5;
wherein,
50nm≤W4≤1000nm；
50nm≤W5≤1000nm。
the series resistance of the depletion mode optical modulator can be reduced by optimizing the combination of the cross-sectional widths of the first P-type region 211, the first N-type region 212, the second P-type region 212, and the second N-type region 222 of the slab (sleb) region, and the doping levels of the dopants of each segment.
Wherein, in some embodiments, the doping levels of the second P-type region 212 and the second N-type region 222 are the same, which may be about 1e 18 ～5e 19 /cm 3 。
In some embodiments, the first plate portion 210 further includes a third P-type region 213 having a fourth P-type doping level, the third P-type region 213 being located between the second P-type region 212 and the P-type electrode contact region 41; the second plate portion 220 further includes a third N-type region 223 having a fourth N-type doping level, the third N-type region 223 being located between the second N-type region 222 and the P-type electrode contact region 42; wherein the fourth P-type doping level is greater than the third P-type doping level and less than or equal to the doping level of the P-type electrode contact region 41; the fourth N-type doping level is greater than the third N-type doping level and less than or equal to the doping level of the N-type electrode contact region 42; the thickness of the third P-type region 213 is greater than the thickness of the second P-type region 212, and the thickness of the third N-type region 223 is greater than the second N-type regionThe thickness of region 222. Further, the optical modulator 100 further comprises a first metal conductive structure 31, the first metal conductive structure 31 being electrically connected to the P-type electrode contact region 41, and a second metal conductive structure 32, the second metal conductive structure 32 being electrically connected to the N-type electrode contact region 42. To ensure good ohmic contact between the P-type and N-type electrode contact regions 41, 42 and the metal structure, the doping levels of the P-type and N-type electrode contact regions 41, 42 are the same for both types of dopants, and may typically be about 1e 19 ～1e 20 /cm 3 。
Further, in the thickness direction of the rib waveguide 101, the third P-type region 213 and the third N-type region 223 each have a fourth section height H4, wherein H3< H4+.h1.
In some embodiments, h4=h2.
In the embodiment of the present application, only the vertical PN junction form of the ridge in fig. 1 is shown as an example, and in some embodiments, the PN junction of the ridge may also be a horizontal PN junction, a combination of a horizontal PN junction and a vertical PN junction, or a PN junction structure with various variations, such as an insert-finger type PN junction.
Another embodiment of the present application provides an optoelectronic integrated chip, which includes the optical modulator of the foregoing embodiment.
Illustratively, as shown in fig. 2, the optoelectronic integrated chip is a silicon-based photonic chip, the silicon-based photonic chip includes a silicon substrate layer 61, an oxygen-buried layer 62 and an optical device layer 63 which are sequentially stacked, and the optical modulator is disposed on the optical device layer 63.
The embodiment of the application provides an optical modulator and an optoelectronic integrated chip, wherein the optical modulator comprises a rib waveguide, and the rib waveguide comprises a ridge part, a first flat plate part and a second flat plate part which are respectively positioned at two opposite sides of the ridge part; the ridge is provided with a P-type doped region with a first P-type doping level and an N-type doped region with a first N-type doping level, the P-type doped region is connected with the N-type doped region at the ridge to form a depletion region positioned at the ridge, the depletion region is distributed in a modulation section of the ridge positioned in the optical modulator, the modulation performance of the optical modulator is improved by optimizing the structures of flat plate parts at two sides of the rib waveguide, the light loss of the optical field due to light scattering by side walls formed by etching of the rib waveguide is reduced as much as possible while the modulation efficiency is improved, and the modulation bandwidth is improved as much as possible, so that the limiting effect on the optical field is achieved, the modulation efficiency is improved, the series resistance of the optical modulator is reduced on the premise that the extra optical loss is not increased, the electro-optic bandwidth of the optical modulator is enlarged, and the performance of a product is improved.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The above describes an optical modulator and an optoelectronic integrated chip provided in the embodiments of the present application in detail, and specific examples are applied to describe the principles and implementations of the present application, where the description of the above embodiments is only used to help understand the technical solution and core ideas of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (13)
1. An optical modulator, comprising:
a rib waveguide including a ridge portion and first and second slab portions respectively located on opposite sides of the ridge portion; the ridge is provided with a P-type doping region with a first P-type doping level and an N-type doping region with a first N-type doping level, the P-type doping region and the N-type doping region are connected at the ridge to form a depletion region positioned at the ridge, and the depletion region is distributed in a modulation section of the ridge positioned in the optical modulator;
a P-type electrode contact region and an N-type electrode contact region, the P-type electrode contact region being connected to a side of the first plate portion relatively far from the ridge portion, the N-type electrode contact region being connected to a side of the second plate portion relatively far from the ridge portion;
the first flat plate part at least comprises a first P-type region with a second P-type doping level and a second P-type region with a third P-type doping level, one side of the first P-type region is connected with the P-type doping region of the ridge part, and the other side of the first P-type region is connected with the second P-type region; the third P-type doping level is greater than the second P-type doping level, which is greater than or equal to the first P-type doping level;
the second plate part at least comprises a first N-type region with a second N-type doping level and a second N-type region with a third N-type doping level, one side of the first N-type region is connected with the N-type doping region of the ridge part, and the other side of the first N-type region is connected with the second N-type region; the third N-type doping level is greater than the second N-type doping level, which is greater than or equal to the first N-type doping level;
and the thickness of the second P-type region is smaller than that of the first P-type region in the thickness direction of the rib waveguide, and the thickness of the second N-type region is smaller than that of the first N-type region.
2. The optical modulator of claim 1, wherein,
the ridge portion has a first section height H1 and the first P-type region has a second section height H2 in the thickness direction of the rib waveguide, wherein,
3. an optical modulator as claimed in claim 2, characterized in that,
the second P-type region has a third section height H3 in the thickness direction of the rib waveguide, wherein,
4. an optical modulator as claimed in claim 2, characterized in that,
150nm≤H1≤500nm。
5. an optical modulator as claimed in claim 2, characterized in that,
and the heights of the sections of the first P-type region and the first N-type region are equal in the thickness direction of the rib waveguide.
6. An optical modulator as claimed in claim 3, characterized in that,
and the second N-type region and the second P-type region have the same section height in the thickness direction of the rib waveguide.
7. The optical modulator of claim 1, wherein the ridge has a first cross-sectional width W1 in a direction perpendicular to a thickness of the rib waveguide;
wherein,
200nm≤W1≤500nm。
8. an optical modulator as claimed in claim 7, wherein the first P-type region has a second cross-sectional width W2 and the first N-type region has a third cross-sectional width W3 in a direction perpendicular to the thickness of the rib waveguide,
wherein,
50nm≤W2≤400nm；
50nm≤W3≤400nm。
9. the optical modulator of claim 8, wherein the second P-type region has a fourth cross-sectional width W4 and the second N-type region has a fifth cross-sectional width W5 in a direction perpendicular to a thickness of the rib waveguide;
wherein,
50nm≤W4≤1000nm；
50nm≤W5≤1000nm。
10. the optical modulator of claim 1, wherein,
the first plate part further comprises a third P-type region with a fourth P-type doping level, and the third P-type region is positioned between the second P-type region and the P-type electrode contact region; the second plate part further comprises a third N-type region with a fourth N-type doping level, and the third N-type region is positioned between the second N-type region and the N-type electrode contact region; wherein the fourth P-type doping level is greater than the third P-type doping level and less than or equal to the doping level of the P-type electrode contact region; the fourth N-type doping level is greater than the third N-type doping level and is less than or equal to the doping level of the N-type electrode contact region;
the thickness of the third P-type region is larger than that of the second P-type region, and the thickness of the third N-type region is larger than that of the second N-type region.
11. The optical modulator of claim 10, wherein,
in the thickness direction of the rib waveguide, the third P-type region and the third N-type region are provided with a fourth section height H4, wherein H3< H4 is less than or equal to H1.
12. An optoelectronic integrated chip comprising an optical modulator according to any one of claims 1-11.
13. The optoelectronic integrated chip of claim 12, wherein the optoelectronic integrated chip is a silicon-based photonic chip comprising a silicon substrate layer, an oxygen-buried layer, and an optical device layer stacked in sequence, the optical modulator being disposed on the optical device layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321625831.9U CN220208025U (en) | 2023-06-26 | 2023-06-26 | Optical modulator and optoelectronic integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321625831.9U CN220208025U (en) | 2023-06-26 | 2023-06-26 | Optical modulator and optoelectronic integrated chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220208025U true CN220208025U (en) | 2023-12-19 |
Family
ID=89137819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321625831.9U Active CN220208025U (en) | 2023-06-26 | 2023-06-26 | Optical modulator and optoelectronic integrated chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220208025U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12124119B2 (en) * | 2023-02-08 | 2024-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical modulator and package |
-
2023
- 2023-06-26 CN CN202321625831.9U patent/CN220208025U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12124119B2 (en) * | 2023-02-08 | 2024-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical modulator and package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5916414B2 (en) | Optical semiconductor device | |
| CN107615140B (en) | Semiconductor optical modulation element | |
| US8488917B2 (en) | Electro-optic modulator | |
| KR101045758B1 (en) | Semiconductor optical modulator | |
| KR20160019044A (en) | Optic modulator and method of manufacturing the same | |
| JP5170236B2 (en) | Waveguide type semiconductor optical modulator and manufacturing method thereof | |
| SG182132A1 (en) | An optical modulator and a method of forming the same | |
| CN111665645B (en) | Electro-optical modulator | |
| JP2013200492A (en) | Athermal ring optical modulator | |
| KR101239134B1 (en) | Optical loss modulator and manufacturing method thereof | |
| CN114624903A (en) | Method for improving modulation efficiency in silicon optical modulator | |
| CN220208025U (en) | Optical modulator and optoelectronic integrated chip | |
| CN115145057A (en) | Multi-doped flat silicon optical modulator | |
| CN113960815A (en) | Silicon optical modulator and forming method thereof | |
| CN113960816B (en) | Silicon light modulator and method of forming the same | |
| JP2005116644A (en) | Semiconductor opto-electronic waveguide | |
| CN112433395B (en) | Silicon optical modulator and method for manufacturing the same | |
| SE511719C2 (en) | Buried heterostructure laser with stream-containing layers | |
| CN113960817B (en) | Silicon light modulator and method of forming the same | |
| JP4948469B2 (en) | Semiconductor optical device | |
| CN111458907B (en) | Optical Bipolar Phase Shifter | |
| US11086189B1 (en) | Silicon optical modulator, method for making the same | |
| JP2970575B2 (en) | Waveguide type semiconductor photo detector | |
| CN113960814B (en) | Silicon light modulator and method of forming the same | |
| US11988905B2 (en) | Phase shifter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |