CN220189544U - Fuse-link for protecting high-frequency circuit semiconductor equipment - Google Patents
Fuse-link for protecting high-frequency circuit semiconductor equipment Download PDFInfo
- Publication number
- CN220189544U CN220189544U CN202321796289.3U CN202321796289U CN220189544U CN 220189544 U CN220189544 U CN 220189544U CN 202321796289 U CN202321796289 U CN 202321796289U CN 220189544 U CN220189544 U CN 220189544U
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- CN
- China
- Prior art keywords
- protecting
- frequency circuit
- silica gel
- circuit semiconductor
- fuse link
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000000155 melt Substances 0.000 claims abstract description 38
- 230000004927 fusion Effects 0.000 claims abstract description 33
- 239000000741 silica gel Substances 0.000 claims abstract description 33
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 33
- 239000006004 Quartz sand Substances 0.000 claims abstract description 17
- 238000005452 bending Methods 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims 1
- 229910001006 Constantan Inorganic materials 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Fuses (AREA)
Abstract
The utility model provides a fuse link for protecting high-frequency circuit semiconductor equipment, which comprises a fusion pipe, contact plates, melts, quartz sand filling bodies and impactors, wherein the contact plates are arranged at two ends of the fusion pipe, a plurality of melts are arranged between the two contact plates, the quartz sand filling bodies filled between the melts are arranged in the inner cavity of the fusion pipe, and the impactors are arranged outside the fusion pipe and are connected with fusing indicators arranged in an indicating hole of the fusion pipe; a plurality of groups of row holes which are arranged in an array manner are formed in the length direction of the melt, each row hole comprises a plurality of round holes which are arranged in an array manner, and narrow diameters are arranged between every two adjacent round holes; v-shaped bending parts are arranged between the adjacent row holes, and silica gel layers with the same length and the same width as the melt are arranged on two sides of each row hole. The utility model has stable fusing characteristic, is suitable for working conditions such as vibration, high humidity, high heat and the like with high frequency not exceeding 300Hz, has more reliable protection to the system, and can be used in high-frequency circuits with rated voltage to 2000V, power frequency of 300Hz and rated current of 500A-2000A.
Description
Technical Field
The utility model relates to the technical field of fuses, in particular to a fuse for protecting high-frequency circuit semiconductor equipment.
Background
The fuse link is used as a protective component and has wider application range. With the gradual development of the ship technology, the requirements of a ship power system are gradually increased, the whole circuit system outputs with high-frequency, high-voltage and large-current requirements, the rated voltage of a common fuse link for protecting semiconductor equipment is AC1000V or AC1250V, the use frequency is 45 Hz-62 Hz, and the requirement of the frequency is not higher, so that the prior requirements cannot be met. Secondly, since the design and verification of low voltage components is generally performed at a frequency of 50Hz or 60Hz, conventional fuses cannot play a role in protecting at high frequencies. In addition, the "high frequency" has a greater influence on the temperature rise of the conductive part, in particular, the higher the frequency, the stronger the skin effect of the conductive body, the greater the hysteresis loss and the eddy current loss, and thus the higher the temperature of the conductive part, so that the low-frequency electric appliance often needs capacity reduction in a high-frequency environment, and the protection characteristic of the low-frequency electric appliance may fail once the capacity reduction is used.
Disclosure of Invention
The utility model aims to provide a fuse link for protecting high-frequency circuit semiconductor equipment, which overcomes the defects in the prior art.
In order to solve the technical problems, the technical scheme of the utility model is as follows: the fuse link for protecting the high-frequency circuit semiconductor equipment comprises a fusion pipe, contact plates, melts, quartz sand filling bodies and impactors, wherein the contact plates are arranged at two ends of the fusion pipe, a flat plate matched with an inner cavity of the fusion pipe is arranged on the inner side of each contact plate, a plurality of melts are arranged between the two contact plates, the quartz sand filling bodies filled between the melts are arranged in the inner cavity of the fusion pipe, and the impactors are arranged outside the fusion pipe and are connected with a fusing indicator arranged in an indicating hole of the fusion pipe; a plurality of groups of row holes which are arranged in an array manner are formed in the length direction of the melt, each row hole comprises a plurality of round holes which are arranged in an array manner, and narrow diameters are arranged between every two adjacent round holes; v-shaped bending parts are arranged between the adjacent row holes, and silica gel layers with the same length and the same width as the melt are arranged on two sides of each row hole.
Further, the fuse link for protecting the high-frequency circuit semiconductor device comprises a first silica gel layer and a second silica gel layer, wherein the first silica gel layer is arranged at two ends of the length direction of the melt, and the second silica gel layer is arranged at the lower end face of the corner of the V-shaped opening of the bending part.
Furthermore, the fuse link for protecting the high-frequency circuit semiconductor device is characterized in that the width of the first silica gel layer is larger than that of the second silica gel layer, and the second silica gel layer is close to the round hole but is not in contact with the round hole.
Furthermore, the fuse link for protecting the high-frequency circuit semiconductor device is characterized in that end plates are fixed at two ends of the fuse tube, the end plates are formed by stamping and are connected with the fuse tube through fasteners, and the contact plates are fixed at two ends of the fuse tube through being assembled with the end plates.
Further, the fuse link for protecting the high-frequency circuit semiconductor device is characterized in that a plurality of positioning lines are symmetrically arranged on the inner surface of the contact plate flat plate, connecting portions bent towards the same direction are arranged at two ends of the melt, and the connecting portions are welded on the contact plate in an aligned mode with the positioning lines, so that the melt and the axis of the melting tube are arranged in the inner cavity of the melting tube in parallel.
Furthermore, the fuse link for protecting the high-frequency circuit semiconductor equipment is formed by stirring quartz sand and a curing agent and then curing at a high temperature.
Further, in the fuse link for protecting a high-frequency circuit semiconductor device, the striker is provided with a stopper piece connected to the end plate at both ends.
Furthermore, the fuse link for protecting the high-frequency circuit semiconductor device is characterized in that the fuse tube is made of high-strength alumina ceramic.
Further, the fuse body for protecting the high-frequency circuit semiconductor equipment is made of 99.9% pure silver.
Compared with the prior art, the utility model has the beneficial effects that:
1, the working conditions of high voltage, high frequency, vibration, high humidity, high heat and the like are met, and the protection of the system is more reliable.
2, the structure of the melt improves the electrical property and the thermal property, and the working temperature rise and the heat dissipation capacity are improved;
and 3, the high-strength alumina ceramic is adopted as a fusion tube, so that the overall strength is increased, and the appearance of the fuse link is more attractive.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present utility model, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
FIG. 1 is a schematic view showing the external structure of a fuse link for protecting a high-frequency circuit semiconductor device according to the present utility model;
FIG. 2 is a half sectional view of a fuse link for protecting a high-frequency circuit semiconductor device according to the present utility model;
FIG. 3 is a schematic view of a melt structure of a fuse link for protecting a high frequency circuit semiconductor device according to the present utility model;
FIG. 4 is a schematic elevational view of the structure of FIG. 3;
FIG. 5 is an enlarged schematic view of part A of FIG. 4;
FIG. 6 is a schematic view showing the structure of a fuse link for protecting a high-frequency circuit semiconductor device;
in the figure: 1. a fusion pipe; 2. a contact plate; 21. a positioning line; 3. a melt; 31. arranging holes; 32. a round hole; 33. a bending part; 34. a connection part; 4. a quartz sand filler; 5. a striker; 6. a fuse indicator; 71. a first silica gel layer; 72. a second silica gel layer; 8. an end plate; 9. and a stop piece.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Example 1
As shown in fig. 1-6, a fuse link for protecting high-frequency circuit semiconductor equipment comprises a fusion tube 1, contact plates 2, a melt 3, quartz sand filling bodies 4 and a striker 5, wherein the contact plates 2 are arranged at two ends of the fusion tube 1, a flat plate matched with an inner cavity of the fusion tube 1 is arranged on the inner side of the contact plates 2, the melt 3 is made of 99.9% pure silver, and a plurality of melt 3 are arranged between the two contact plates 2; the inner cavity of the fusion tube 1 is internally provided with a quartz sand filling body 4 filled between the melts 3, the impactor 5 is arranged outside the fusion tube 1 and connected with a fusing indicator 6 arranged in an indicating hole of the fusion tube 1, the fusing indicator 6 comprises a compression spring and a constantan wire, the compression spring is arranged in the indicating hole on the fusion tube, the constantan wire is connected with the melts in parallel, and the compression spring is connected with the constantan wire in a contact mode.
In the above structure, as shown in fig. 2-3, a plurality of groups of row holes 31 are arranged in an array manner along the length direction of the melt 3, the row holes 31 comprise a plurality of round holes 32 arranged in an array manner, and a narrow diameter with a distance delta is arranged between every two adjacent round holes 32; and V-shaped bending parts 33 are arranged between the adjacent row holes 31, and the bending parts 33 can increase radiating surfaces, so that the radiating effect is achieved, and the temperature rise influence caused by high frequency is reduced.
As shown in fig. 2-5, two sides of the row holes 31 are provided with silica gel layers with the same length and width as the melt 3; the silica gel layer is uniformly coated on the periphery of the row holes 31, so that arc channeling can be prevented in the breaking process to have the effect of assisting arc extinction, and meanwhile, the service life of a melt can be prolonged; the silica gel layer comprises a first silica gel layer 71 and a second silica gel layer 72, the first silica gel layer 71 is arranged at two ends of the melt 3 in the length direction, and the second silica gel layer 72 is arranged at the lower end face of the corner of the V-shaped opening of the bending part 33; the width of the first silica gel layer 71 is greater than the width of the second silica gel layer 72, the second silica gel layer 72 is close to the round hole 32 but is not contacted with the round hole 32, and the first silica gel layer 71 and the second silica gel layer 72 are reasonably arranged to play a better auxiliary arc extinguishing function.
Example 2
Based on the structure of the first embodiment, as shown in fig. 1 and 2, two ends of the fusion pipe 1 are fixed with end plates 8, the end plates 8 are formed by punching and are connected with the fusion pipe 1 through fasteners, and the contact plates 2 are assembled with the end plates 8 and fixed at two ends of the fusion pipe 1.
As shown in fig. 2 and 6, the inner surface of the flat plate of the contact plate 2 is provided with a plurality of positioning lines 21 which are arranged in a central symmetry manner, two ends of the melt 3 are provided with connecting parts 34 which are bent towards the same direction, and the connecting parts 34 are welded on the contact plate 2 in an aligned manner with the positioning lines 21, so that the melt 3 and the axis of the melting tube 1 are arranged in the inner cavity of the melting tube 1 in parallel, and in addition, the plurality of melt 3 can be spliced along the positioning lines in the length direction of the positioning lines 21. By means of the positioning lines 21 on the contact plates 2, the melt 3 can be positioned more conveniently and accurately during spot welding, the phenomenon of abnormal temperature rise or arc explosion when short-circuit current is fused due to lap joint between the melt 3 is avoided, the stability of the fuse link is guaranteed, and the service life of the fuse link is prolonged.
Wherein the quartz sand filling body 4 is formed by stirring quartz sand and a curing agent and then curing at a high temperature. Specifically, quartz sand and curing powder are filled in the inner cavity of the melting tube after being stirred, and then the curing powder is dissolved by high heat so as to cure the whole quartz sand, so that the breaking capacity of the product is improved.
Furthermore, as shown in fig. 1, the striker 5 is provided at both ends with stopper pieces 9 connected to the end plate 8, so that accidental loosening of the striker can be prevented in a vibrating environment.
In addition, the fusion pipe 1 is made of high-strength alumina ceramic, and the material has good high-temperature resistance, corrosion resistance and insulating property, improves the expansion resistance and has attractive appearance;
the fuse link for protecting the semiconductor equipment for the high-frequency circuit is mainly used for protecting semiconductor components in a high-frequency circuit system, when fault current is encountered in use, the narrow neck part in the melt 3 can be quickly melted, an instant arc is generated, the arc can be cooled by the surrounding solidified quartz sand filling body 4 to be extinguished, and meanwhile, the coated silica gel layer can also play a role in assisting arc extinction. In the fusing process, the constantan wire can be quickly melted to enable the fusing indicator to overcome the impact thimble of the impact device 5 caused by the starting of the compression spring, so that the indication switch connected with the impact device 5 sends out a signal to provide reliable protection for related circuits and components. The semiconductor device for the high-frequency circuit has higher rated voltage of the protective fuse link, stable fusing characteristic, is suitable for working conditions such as vibration, high humidity, high heat and the like with high frequency of 300Hz and below, and is more reliable in system protection; the high-voltage fuse-link can be used for high-frequency circuits with rated voltage of 2000V, power frequency of 300Hz and rated current of 500A-2000A, the breaking capacity is 50kA, and the requirement of the high-frequency circuit fuse-link is met.
It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments, and that the present utility model may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (9)
1. A fuse link for protecting high-frequency circuit semiconductor equipment is characterized in that: the device comprises a fusion pipe, contact plates, melts, quartz sand filling bodies and impactors, wherein the contact plates are arranged at two ends of the fusion pipe, a flat plate matched with an inner cavity of the fusion pipe is arranged on the inner side of each contact plate, a plurality of melts are arranged between the two contact plates, the quartz sand filling bodies filled between the melts are arranged in the inner cavity of the fusion pipe, and the impactors are arranged outside the fusion pipe and connected with fusing indicators arranged in an indicating hole of the fusion pipe; a plurality of groups of row holes which are arranged in an array manner are formed in the length direction of the melt, each row hole comprises a plurality of round holes which are arranged in an array manner, and narrow diameters are arranged between every two adjacent round holes; v-shaped bending parts are arranged between the adjacent row holes, and silica gel layers with the same length and the same width as the melt are arranged on two sides of each row hole.
2. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1, wherein: the silica gel layer comprises a first silica gel layer and a second silica gel layer, wherein the first silica gel layer is arranged at two ends of the length direction of the melt, and the second silica gel layer is arranged at the lower end face of the corner of the V-shaped opening of the bending part.
3. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 2, wherein: the width of the first silica gel layer is larger than that of the second silica gel layer, and the second silica gel layer is close to the round hole but is not in contact with the round hole.
4. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1, wherein: end plates are fixed at two ends of the fusion tube, the end plates are formed by stamping and are connected with the fusion tube through fasteners, and the contact plates are fixed at two ends of the fusion tube through being assembled with the end plates.
5. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1 or 4, wherein: the inner surface of the contact plate flat plate is provided with a plurality of positioning lines symmetrically arranged in a central line, two ends of the melt are provided with connecting parts bent in the same direction, and the connecting parts are welded on the contact plate in an aligned manner with the positioning lines, so that the melt and the axis of the melting pipe are arranged in the inner cavity of the melting pipe in parallel.
6. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1, wherein: the quartz sand filling body is formed by stirring quartz sand and a curing agent and then curing at a high temperature.
7. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 4, wherein: and two ends of the striker are provided with stop sheets connected with the end plates.
8. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1, wherein: the melting pipe is made of high-strength alumina ceramics.
9. The fuse link for protecting a high-frequency circuit semiconductor device according to claim 1, wherein: the melt was made with 99.9% pure silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321796289.3U CN220189544U (en) | 2023-07-10 | 2023-07-10 | Fuse-link for protecting high-frequency circuit semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321796289.3U CN220189544U (en) | 2023-07-10 | 2023-07-10 | Fuse-link for protecting high-frequency circuit semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220189544U true CN220189544U (en) | 2023-12-15 |
Family
ID=89113684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321796289.3U Active CN220189544U (en) | 2023-07-10 | 2023-07-10 | Fuse-link for protecting high-frequency circuit semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220189544U (en) |
-
2023
- 2023-07-10 CN CN202321796289.3U patent/CN220189544U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant |