CN220098576U - Preparation mold for silicon carbide monomer - Google Patents
Preparation mold for silicon carbide monomer Download PDFInfo
- Publication number
- CN220098576U CN220098576U CN202321718664.2U CN202321718664U CN220098576U CN 220098576 U CN220098576 U CN 220098576U CN 202321718664 U CN202321718664 U CN 202321718664U CN 220098576 U CN220098576 U CN 220098576U
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- mould
- mold
- bottom plate
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 239000000178 monomer Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000010276 construction Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011335 coal coke Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002006 petroleum coke Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- Ceramic Products (AREA)
Abstract
The utility model discloses a preparation mold for a silicon carbide monomer, which comprises a mold main body part, wherein the mold main body part comprises a mold side frame main body, the lower surface of the mold side frame main body is connected with a mold bottom plate, a plurality of diversion trenches are arranged on the upper surface and the lower surface of the mold bottom plate, the combination shape of the diversion trenches is in a shape of a Chinese character 'tian', and vent holes penetrating through the mold bottom plate are formed at the intersection positions of the adjacent diversion trenches.
Description
Technical Field
The utility model relates to a preparation mould for silicon carbide monomers.
Background
Silicon carbide (SiC) is prepared by high-temperature smelting of quartz sand, petroleum coke (or coal coke), wood dust (salt is added in the production of green silicon carbide) and other raw materials through a resistance furnace. Silicon carbide also has rare minerals in nature, morganite. Silicon carbide is also known as carbo-silica. Among the non-oxide high technology refractory materials of current generation C, N, B, silicon carbide is one of the most widely used and economical materials, and may be referred to as diamond grit or refractory grit. At present, silicon carbide produced in China industry is divided into black silicon carbide and green silicon carbide, which are hexagonal crystals, the specific gravity is 3.20-3.25, and the microhardness is 2840-3320 kg/mm < 2 >.
At present, the dies of ceramic plates for silicon carbide production are various, but the use, heat dissipation and flow guiding effects are not ideal, and the use is troublesome, so that repeated maintenance is needed for ensuring the smooth production, thus greatly reducing the working efficiency, and being time-consuming and labor-consuming. The part of the die can only produce the whole ceramic plate, operators also need to cut expansion joints according to the requirements in the subsequent procedures, the production cost is increased, meanwhile, materials are wasted, and the production cost is increased. Thus, a preparation mold for silicon carbide monomer has been developed.
Disclosure of Invention
The utility model aims to solve the defects in the prior art and provides a preparation mold for a silicon carbide monomer.
The utility model provides a be used for free preparation mould of carborundum, includes mould main part, the mould main part includes mould side frame main part, and the lower surface of mould side frame main part even has the mould bottom plate, the upper and lower surface of mould bottom plate all is equipped with a plurality of guiding gutter, and the integrated configuration of a plurality of guiding gutter is "field" font, and the crossing department of adjacent guiding gutter has all been seted up and has been run through the mould bottom plate air vent.
As a further improvement, the die main body part is of an integrated structure, has the advantages of simple structure, convenient preparation and production, simple installation, low production cost, high structural strength, difficult damage and long service life, and is suitable for long-time use.
As a further improvement, the two corners of the groove body of the diversion groove are both rounded, so that the smooth flowing degree of silicon carbide is improved, the silicon carbide residue caused by right-angle design is avoided, the quality and effect of die preparation are ensured, and the using effect of the die is improved.
As a further improvement, the diameter of the vent hole is larger than the width of the diversion trench, thereby avoiding the vent hole from being blocked due to overlarge flow of the diversion trench and ensuring the normal use of the vent hole.
As a further improvement, the right angle is formed on the inner side of the upper end face of the side frame main body of the die, and the side frame is simple in structure, convenient to use and convenient for workers to use and take.
As a further improvement, the depth of the diversion trench is smaller than half of the thickness of the die bottom plate, the partition plate between the diversion trenches between the upper surface and the lower surface of the die bottom plate is thinner, an effective heat dissipation effect can be achieved, the flow of silicon carbide can be effectively ensured, and the heat dissipation effect is enhanced.
As a further improvement, the plurality of diversion trenches are communicated with each other, so that the preparation effect of the silicon carbide is improved.
The beneficial effects are that:
the device has the advantages of simple structure, simple overall structure, convenient preparation, integrated design, convenient preparation and production, simple installation, low production cost, high structural strength, difficult damage, long service life, suitability for long-time use, repeated use, firm and durable mold durability, high accuracy, repeated maintenance for mold preparation in the prior art, low working efficiency, time consumption and labor consumption, and operators also need to cut expansion joints according to requirements in subsequent procedures, so that the production cost is increased, the material is wasted, the production cost is increased, the preparation speed is low, the produced silicon carbide is poor, and the yield is low.
Drawings
FIG. 1 is a schematic perspective view of a manufacturing mold;
FIG. 2 is a schematic view of the lower surface structure of the production mold;
FIG. 3 is a schematic top view of the overall structure of the production mold;
FIG. 4 is a schematic view of the internal structure of the production mold;
FIG. 5 is a schematic view of the overall structure of the bottom view of the production mold;
1. the side frame body 2, the vent hole 3, the diversion trench 4 and the bottom plate of the die.
Detailed Description
The present utility model will be further described in detail with reference to the following examples and drawings for the purpose of enhancing the understanding of the present utility model, which examples are provided for the purpose of illustrating the present utility model only and are not to be construed as limiting the scope of the present utility model.
As shown in fig. 1 to 5, as a specific embodiment of the present utility model, a preparation mold for a silicon carbide monomer includes a mold side frame body 1, a vent hole 2, a flow guide groove 3, and a mold bottom plate 4.
The utility model provides a be used for free preparation mould of carborundum, includes mould main part, and mould main part includes mould side frame main part 1, and mould side frame main part 1's lower surface even has mould bottom plate 4, the upper and lower surface of mould bottom plate 4 all is equipped with a plurality of guiding gutter 3, and the integrated configuration of a plurality of guiding gutter 3 is "field" font, and the crossing department of adjacent guiding gutter 3 has all been seted up and has been run through mould bottom plate 4 air vent 2.
The die main body part is of an integrated structure, and has the advantages of simple structure, convenient preparation and production, simple installation, low production cost, high structural strength, difficult damage and long service life, and is suitable for long-time use.
Rounded corners are formed in two corners inside the groove body of the diversion groove 3, so that the smooth flowing degree of silicon carbide is improved, silicon carbide residues caused by right-angle design are avoided, the quality and effect of mold preparation are guaranteed, and the use effect of the mold is improved.
The diameter of the vent hole 2 is larger than the width of the diversion trench 3, so that the vent hole 2 is prevented from being blocked due to overlarge flow of the diversion trench 3, and the normal use of the vent hole 2 is ensured.
The right angle is poured on the inner side of the upper end face of the die side frame main body 1, and the die side frame is simple in structure, convenient to use and convenient for workers to use and take.
The depth of the diversion trench 3 is less than half of the thickness of the die bottom plate 4, and the partition plate between the diversion trench 3 between the upper surface and the lower surface of the die bottom plate 4 is thinner, so that an effective heat dissipation effect can be achieved, the flow of silicon carbide can be effectively ensured, and the heat dissipation effect is enhanced.
The plurality of diversion trenches 3 are communicated with each other, so that the preparation effect of silicon carbide is improved.
When the die is used, silicon carbide is placed in the die main body part and is subjected to fixed qualitative treatment, and the bottom of the die bottom plate 4 is provided with the vent holes 2 and the flow channels, so that air circulation is facilitated.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the utility model.
The foregoing description is only illustrative of the preferred embodiments of the present utility model, and therefore should not be taken as limiting the scope of the utility model, for all changes and modifications that come within the meaning and range of equivalency of the claims and specification are therefore intended to be embraced therein.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present utility model and not for limiting the same, and although the present utility model has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present utility model, which is intended to be covered by the scope of the claims of the present utility model.
Claims (7)
1. The utility model provides a be used for free preparation mould of carborundum, includes mould main part, its characterized in that, mould main part includes mould side frame main part, and the lower surface of mould side frame main part even has the mould bottom plate, the upper and lower surface of mould bottom plate all is equipped with a plurality of guiding gutter, and the integrated configuration of a plurality of guiding gutter is "field" font, and the crossing department of adjacent guiding gutter has all seted up and has run through the mould bottom plate air vent.
2. A preparation mould for silicon carbide monomers as claimed in claim 1 in which the mould body part is of unitary moulded construction.
3. The preparation mold for silicon carbide monomers as claimed in claim 1, wherein both corners inside the groove body of the diversion groove are rounded.
4. The manufacturing mold for silicon carbide monomer according to claim 1, wherein the diameter of the vent hole is larger than the width of the diversion trench.
5. The manufacturing mold for silicon carbide monomers as claimed in claim 1, wherein the upper end face of the mold side frame body is internally chamfered with a right angle.
6. The manufacturing mold for silicon carbide monomers as claimed in claim 1, wherein the depth of the diversion trench is less than half the thickness of the bottom plate of the mold.
7. The manufacturing mold for silicon carbide monomers as claimed in claim 1, wherein the plurality of flow guide grooves are communicated with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321718664.2U CN220098576U (en) | 2023-06-30 | 2023-06-30 | Preparation mold for silicon carbide monomer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321718664.2U CN220098576U (en) | 2023-06-30 | 2023-06-30 | Preparation mold for silicon carbide monomer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220098576U true CN220098576U (en) | 2023-11-28 |
Family
ID=88871974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321718664.2U Active CN220098576U (en) | 2023-06-30 | 2023-06-30 | Preparation mold for silicon carbide monomer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220098576U (en) |
-
2023
- 2023-06-30 CN CN202321718664.2U patent/CN220098576U/en active Active
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| GR01 | Patent grant |