CN220041785U - Wafer bonding detection device and wafer bonding system - Google Patents
Wafer bonding detection device and wafer bonding system Download PDFInfo
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- CN220041785U CN220041785U CN202320943188.8U CN202320943188U CN220041785U CN 220041785 U CN220041785 U CN 220041785U CN 202320943188 U CN202320943188 U CN 202320943188U CN 220041785 U CN220041785 U CN 220041785U
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- 235000012431 wafers Nutrition 0.000 description 106
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Abstract
The utility model discloses a wafer bonding detection device and a wafer bonding system. The detection device comprises: the illumination system is positioned on the first side of the wafer to be bonded, and is provided with a light homogenizing component which is used for carrying out first light homogenizing treatment on the detection light outputted by the illumination system so as to uniformly cover the surface of the wafer to be bonded by the detection light; and the image acquisition device is positioned at the second side of the wafer to be bonded and is used for acquiring detection light penetrating through the wafer to be bonded so as to form a detection image indicating the bonding result of the wafer. The wafer bonding detection device can uniformly irradiate the whole wafer to be detected in a large range, and cannot be interfered by the reflected light of the surface of the wafer, so that the obtained detection image has higher contrast, and the detection precision and the detection efficiency are improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding detection device and a wafer bonding system.
Background
Wafer bonding has become a key technology for the integrated development and practicality of semiconductor manufacturing technology. Wafer bonding refers to bonding two flat wafers face to face, applying external conditions such as certain pressure, temperature, voltage and the like, and generating bonding force between atoms or molecules, such as covalent bonds, metal bonds, molecular bonds and the like, at the interface between the original two wafers, so that the bonding between the surfaces of the two wafers can reach certain strength, and the two wafers are bonded into a whole.
However, in the wafer bonding process, a large number of bubble defects having different sizes may be formed at the bonding interface because particles remain on the surface or gas generated during wafer bonding cannot be released in time. These bubble defects can result in loss of yield in the areas where the bubbles are located and in the areas around the bubbles, and these bubbles may collapse during any subsequent process, thereby adding to other defects.
In the existing wafer bonding detection technology, a reflection type illumination method is commonly used, so that not only is the wafer to be bonded required to be thinned, but also the bonding defect in the wafer can be detected through reflection by detection light, and the detection light is easily interfered by the reflected light of the wafer surface, so that the contrast of a photographed detection image is reduced, the identification precision is reduced, and the detection precision of the detection image is further affected. That is, the wafer bonding detection technology in the prior art has the problems of low detection precision, complex process, low efficiency and the like.
In order to solve the above-mentioned problems in the prior art, there is a need in the art for a wafer bonding inspection technology, which can uniformly irradiate a whole wafer to be inspected in a large range and not be interfered by the light reflected by the surface of the wafer, so that the obtained inspection image has a higher contrast, and the inspection accuracy and the inspection efficiency are improved.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the defects in the prior art, the utility model provides a wafer bonding detection device and a wafer bonding system, which can uniformly irradiate a whole wafer to be detected in a large range and cannot be interfered by light reflected by the surface of the wafer, so that an obtained detection image has higher contrast, and the detection precision and the detection efficiency are improved.
Specifically, the wafer bonding inspection apparatus according to the first aspect of the present utility model includes: the illumination system is positioned on the first side of the wafer to be bonded, and is provided with a light homogenizing component which is used for carrying out first light homogenizing treatment on the detection light outputted by the illumination system so as to uniformly cover the surface of the wafer to be bonded by the detection light; and the image acquisition device is positioned at the second side of the wafer to be bonded and is used for acquiring detection light penetrating through the wafer to be bonded so as to form a detection image indicating the bonding result of the wafer.
Further, in some embodiments of the present utility model, a point light source and a beam expanding unit are further configured in the illumination system, wherein the point light source is located on the first side of the beam expanding unit, the beam expanding unit is located on the first side of the beam homogenizing unit, an input light beam emitted by the point light source is first subjected to beam expanding treatment by the beam expanding unit, and then is subjected to first homogenizing treatment by the beam homogenizing unit, so as to uniformly cover the surface of the wafer to be bonded, and an irradiation range of the detected light beam subjected to the homogenizing treatment is greater than or equal to the surface of the wafer to be bonded.
Further, in some embodiments of the present utility model, a fresnel lens is further disposed between the illumination system and the wafer to be bonded, for converging the detection light with a specific wavelength suitable for bonding detection in the detection light, and performing a second light homogenizing process on the converged detection light.
Further, in some embodiments of the utility model, the particular wavelength of detection light comprises infrared light.
Further, in some embodiments of the present utility model, a light homogenizing layer is further disposed between the illumination system and the wafer to be bonded, and the light homogenizing layer is disposed between the fresnel lens and the wafer to be bonded, and is configured to perform a third light homogenizing process on the detection light with the specific wavelength output by the fresnel lens.
Further, in some embodiments of the present utility model, the image capturing device is configured with a camera body and an objective lens with adjustable magnification and/or depth of field and/or resolution, wherein an imaging focal plane of the objective lens is located at a bonding interface of the wafer to be bonded.
Further, in some embodiments of the utility model, the magnification and/or depth of field and/or resolution of the objective lens is determined based on the wavelength of the detection light.
Further, in some embodiments of the present utility model, the detection device further includes a detection machine, where the detection machine is connected to the image capturing device, and is configured to integrally adjust a position of the image capturing device according to a magnification and/or a depth of field and/or a resolution of the objective lens.
Further, in some embodiments of the present utility model, an optical filter is further disposed on an outer surface of the objective lens, for filtering stray light in the detection light source.
In addition, the wafer bonding system provided according to the second aspect of the present utility model includes the wafer bonding inspection device provided in the first aspect; the first mechanical arm is used for supporting a first wafer to be bonded; and the second mechanical arm is used for supporting the second wafer to be bonded and moving the second wafer according to the detection result output by the detection device.
Drawings
The above features and advantages of the present utility model will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
Fig. 1 is a schematic structural diagram of a wafer bonding inspection apparatus according to some embodiments of the present utility model.
Reference numerals:
100. a wafer bonding detection device;
110. a lighting system;
111. a point light source;
112. a beam expanding member;
113. a light homogenizing component;
120. an image acquisition device;
121. a camera body;
122. an objective lens;
123. a light filter;
130. a Fresnel lens;
140. a light homogenizing layer; and
200. and (5) bonding the wafers.
Detailed Description
Further advantages and effects of the present utility model will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present utility model with specific examples. While the description of the utility model will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the utility model described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the utility model. The following description contains many specific details for the purpose of providing a thorough understanding of the present utility model. The utility model may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the utility model.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the utility model as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present utility model.
As described above, in the conventional wafer bonding inspection technology, a reflective illumination method is often used, and not only the wafer to be bonded needs to be thinned, so that the bonding defect in the wafer can be detected by reflection of the inspection light, but also the inspection light is easily interfered by the reflected light on the surface of the wafer, so that the contrast of the photographed inspection image is reduced, thereby reducing the recognition accuracy and further affecting the inspection accuracy of the inspection image. That is, the wafer bonding detection technology in the prior art has the problems of low detection precision, complex process, low efficiency and the like.
In order to solve the problems in the prior art, the utility model provides a wafer bonding detection device and a wafer bonding system, which can uniformly irradiate a whole wafer to be detected in a large range and cannot be interfered by light reflected by the surface of the wafer, so that an obtained detection image has higher contrast, and the detection precision and the detection efficiency are improved.
In some non-limiting embodiments, the wafer bonding inspection apparatus provided in the first aspect of the present utility model may be configured in the wafer bonding system provided in the second aspect of the present utility model.
The operation of the wafer bonding inspection apparatus will be described in conjunction with some embodiments of the wafer bonding system. It will be appreciated by those skilled in the art that these examples of wafer bonding systems are merely some non-limiting embodiments provided by the present utility model, and are intended to clearly illustrate the general concepts of the present utility model and to provide some embodiments that are convenient for public implementation, rather than to limit the overall operation or function of the wafer bonding inspection apparatus. Similarly, the wafer bonding inspection apparatus is only a non-limiting embodiment of the present utility model, and is not limited to the donor thereof.
Specifically, in some embodiments of the present utility model, a wafer bonding system for bonding two wafers mainly includes a first robot arm, a second robot arm, and a wafer bonding inspection device. The first mechanical arm is used for supporting a first wafer to be bonded, and the second mechanical arm is used for supporting a second wafer to be bonded. The wafer bonding detection device can be used for detecting whether the first wafer and the second wafer to be bonded are in proper bonding positions, whether residual particles and/or bubble defects exist on bonding surfaces of the first wafer and the second wafer, and the like. The first mechanical arm and/or the second mechanical arm can move the first wafer and/or the second wafer according to the detection result of the wafer bonding detection device so as to solve the defects in the bonding process.
For a better description of the wafer bonding inspection apparatus, please refer to fig. 1, fig. 1 is a schematic diagram illustrating a wafer bonding inspection apparatus according to some embodiments of the present utility model.
As shown in fig. 1, in some embodiments of the present utility model, a wafer bonding inspection apparatus 100 mainly includes an illumination system 110 and an image acquisition apparatus 120. The illumination system 110 is located on a first side of the wafer 200 to be bonded, and in particular, as shown in fig. 1, the illumination system 110 may be located on an underside of the wafer 200 to be bonded. The illumination system 110 is internally provided with a light uniformizing member 113 for performing a first light uniformizing process on the detection light outputted from the illumination system 110 so that the detection light uniformly covers the surface of the wafer 200 to be bonded. The image capturing device 120 is located on the second side of the wafer 200 to be bonded, and in particular, as shown in fig. 1, the image capturing device 120 may be located on the upper side of the wafer 200 to be bonded. The image capturing device 120 is configured to capture a detection light penetrating through the wafer 200 to be bonded, so as to form a detection image indicating a bonding result of the wafer.
Specifically, the illumination system 110 may further include a point light source 111 and a beam expander 112, wherein the point light source 111 is located on a first side of the beam expander 112, and the beam expander 112 is located on a first side of the beam homogenizing member 113. Specifically, as shown in fig. 1, the point light source 111 may be located at the lower side of the beam expanding unit 112, and the beam expanding unit 112 may be located at the lower side of the dodging unit 113. The input light for detection emitted from the point light source 111 is first passed through the beam expander 112 to be subjected to beam expansion processing, and the irradiation range of the detection light, that is, the detection field of view is enlarged. The first light homogenizing treatment is performed through the light homogenizing component 113, so that the surface of the wafer 200 to be bonded is uniformly covered, wherein the irradiation range of the detection light through the light homogenizing component 113 is larger than or equal to the surface of the wafer 200 to be bonded, so that the whole surface of the wafer 200 to be bonded can be uniformly penetrated and detected while a large-range detection view is ensured, and the detection efficiency and detection precision are improved.
Further, as shown in fig. 1, in some preferred embodiments, a fresnel lens 130 is further disposed between the illumination system 110 and the wafer 200 to be bonded, and is configured to collect the detection light with a specific wavelength suitable for bonding detection in the detection light, and perform a second light homogenizing treatment on the collected detection light.
Preferably, the detection light of a specific wavelength may include infrared light, and the wafer 200 to be bonded may be penetrated by using the infrared light as a point light source, and the transmission type illumination method may solve the problem that the conventional reflection type illumination method is easily interfered by the reflected light of the wafer surface. In addition, the infrared light with better penetrability can also reduce the step of thinning the wafer 200 to be bonded, thereby further simplifying the operation steps and improving the convenience of detection. The fresnel lens 130 is often equivalent to a convex lens for infrared and visible light, and has a good converging effect on such wavelengths, but is much lower in cost than a conventional convex lens.
Further, as further shown in fig. 1, a light homogenizing layer 140 may be further disposed between the illumination system 110 and the wafer 200 to be bonded. Specifically, the light homogenizing layer 140 may be disposed between the fresnel lens 130 and the wafer 200 to be bonded, and is configured to perform a third light homogenizing treatment on the detection light with a specific wavelength output by the fresnel lens 130, so that the detection light covers the bonding surface of the whole wafer 200 to be bonded more uniformly, and detection accuracy and detection efficiency are improved.
In the wafer bonding inspection apparatus 100 in the embodiment shown in fig. 1, a camera body 121 and an objective lens 122 with adjustable magnification and/or depth of field and/or resolution may be disposed in an image capturing device 120 located above a wafer 200 to be bonded, so that an imaging focal plane of the objective lens 122 under inspection light covers a bonding interface of a wafer bonding structure.
Specifically, since factors affecting the depth of field are numerous, wherein the smaller the magnification of objective 122, the greater the depth of field, the depth of field can be adjusted by selecting an objective 122 of appropriate magnification to present a clear inspection image indicative of wafer bonding results. Further, the longer the wavelength of the detection light, the larger the depth of field, but the longer the wavelength of the detection light causes a decrease in resolution of the image, so that a specific wavelength suitable for bonding detection may be selected as the detection light according to the actual situation. In this embodiment, the depth of view can be adjusted by selecting the objective lens 122 with proper magnification and/or depth of field and/or resolution, and the size of the field of view can be adjusted, so that the imaging focal plane of the objective lens 122 is located at the bonding interface of the wafer 200 to be bonded, and further the defects such as residual particles and bubbles on the whole bonding interface of the wafer bonding structure can be detected.
Optionally, in some embodiments, the wafer bonding inspection apparatus 100 may further include an inspection machine (not shown in the drawings). The detection machine may be connected to the image capturing device 120, and is configured to integrally adjust a position of the image capturing device 120 according to a magnification and/or a depth of field and/or a resolution of the objective lens 122.
As further shown in FIG. 1, in some alternative embodiments, a filter 123 may be provided on the outer surface of objective 122 for filtering stray light from the detection light source.
In summary, the present utility model provides a wafer bonding inspection apparatus and a wafer bonding system, which can uniformly irradiate a whole wafer to be inspected in a large range, and compared with the conventional reflective illumination method, the wafer bonding inspection apparatus and the wafer bonding system not only can not be interfered by the reflected light on the surface of the wafer, but also can obtain an inspection image with a higher contrast, the contrast of the inspection image is obviously higher than that of the inspection image obtained by the reflective illumination, and the inspection apparatus and the inspection system have higher recognition precision and improved inspection precision and inspection efficiency.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A wafer bonding inspection apparatus, comprising:
the illumination system is positioned on the first side of the wafer to be bonded, and is provided with a light homogenizing component which is used for carrying out first light homogenizing treatment on the detection light outputted by the illumination system so as to uniformly cover the surface of the wafer to be bonded by the detection light; and
the image acquisition device is positioned at the second side of the wafer to be bonded and is used for acquiring detection light penetrating through the wafer to be bonded so as to form a detection image indicating the bonding result of the wafer, and the image acquisition device is internally provided with a camera body and an objective lens with adjustable multiplying power and/or depth of field and/or resolution, wherein the imaging focal plane of the objective lens is positioned at the bonding interface of the wafer to be bonded, and the multiplying power and/or depth of field and/or resolution of the objective lens are determined according to the wavelength of the detection light.
2. The inspection apparatus according to claim 1, wherein a point light source and a beam expander are further disposed in the illumination system, wherein the point light source is located on the first side of the beam expander, the beam expander is located on the first side of the beam homogenizing unit, and input light emitted from the point light source is first subjected to beam expanding by the beam expander and then to first homogenizing by the beam homogenizing unit, so as to uniformly cover the surface of the wafer to be bonded, and an irradiation range of the detected light subjected to the homogenizing is greater than or equal to the surface of the wafer to be bonded.
3. The inspection apparatus according to claim 2, wherein a fresnel lens is further provided between the illumination system and the wafer to be bonded, for converging the inspection light of a specific wavelength suitable for bonding inspection among the inspection light, and performing a second light homogenizing process on the converged inspection light.
4. A detection device according to claim 3, wherein the detection light of a specific wavelength comprises infrared light.
5. The inspection apparatus according to claim 3, wherein a light homogenizing layer is further disposed between the illumination system and the wafer to be bonded, and the light homogenizing layer is disposed between the fresnel lens and the wafer to be bonded, and is configured to perform a third light homogenizing process on the inspection light with the specific wavelength output by the fresnel lens.
6. The detection device according to claim 1, further comprising a detection machine connected to the image acquisition device for integrally adjusting the position of the image acquisition device according to the magnification and/or depth of field and/or resolution of the objective lens.
7. The detecting device according to claim 1, wherein an outer surface of the objective lens is further provided with a filter for filtering stray light in the detecting light source.
8. A wafer bonding system, comprising:
a wafer bonding inspection apparatus according to any one of claims 1 to 7;
the first mechanical arm is used for supporting a first wafer to be bonded; and
and the second mechanical arm is used for supporting a second wafer to be bonded and moving the second wafer according to the detection result output by the detection device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320943188.8U CN220041785U (en) | 2023-04-20 | 2023-04-20 | Wafer bonding detection device and wafer bonding system |
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| CN202320943188.8U CN220041785U (en) | 2023-04-20 | 2023-04-20 | Wafer bonding detection device and wafer bonding system |
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| CN220041785U true CN220041785U (en) | 2023-11-17 |
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| CN202320943188.8U Active CN220041785U (en) | 2023-04-20 | 2023-04-20 | Wafer bonding detection device and wafer bonding system |
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