CN220012889U - Film forming device with temperature measurement window - Google Patents
Film forming device with temperature measurement window Download PDFInfo
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- CN220012889U CN220012889U CN202320675394.5U CN202320675394U CN220012889U CN 220012889 U CN220012889 U CN 220012889U CN 202320675394 U CN202320675394 U CN 202320675394U CN 220012889 U CN220012889 U CN 220012889U
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- temperature measuring
- film forming
- temperature
- temperature measurement
- reaction chamber
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- 238000009529 body temperature measurement Methods 0.000 title claims description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 238000010926 purge Methods 0.000 claims abstract description 32
- 230000005855 radiation Effects 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 238000001816 cooling Methods 0.000 claims description 31
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 35
- 238000000034 method Methods 0.000 description 6
- 238000004321 preservation Methods 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
Abstract
The utility model discloses a film forming device with a temperature measuring window, which relates to the technical field of film forming equipment and comprises a temperature measuring window arranged at the top of a reaction chamber, wherein a temperature measuring mirror is arranged at the temperature measuring window, a radiation thermometer is arranged at the outer side of the temperature measuring mirror, a temperature measuring channel is vertically arranged at the inner side of the temperature measuring mirror and is opposite to the radiation thermometer, the temperature measuring channel is positioned above a wafer in the reaction chamber, and the radiation thermometer measures the temperature of the wafer through the temperature measuring channel; a purging cavity is further arranged between the temperature measuring sight glass and the top end opening of the temperature measuring channel, and a transverse purging port is formed in the side part of the purging cavity in a communicating manner; according to the utility model, the radiation thermometer is arranged outside the reaction chamber to measure the surface temperature of the wafer through the temperature measuring mirror and the temperature measuring channel, so that the surface temperature of the wafer can be monitored remotely, the air inlet uniformity is not influenced, and the film forming thickness of the wafer is ensured to be uniform.
Description
Technical Field
The utility model relates to the technical field of film forming equipment, in particular to a film forming device with a temperature measuring window.
Background
Conventionally, epitaxial growth techniques have been applied to the manufacture of semiconductor devices such as power devices including insulated gate bipolar transistors, which require a crystal film having a relatively large film thickness.
In the vapor phase growth method used in the epitaxial growth technique, the pressure in the film forming chamber is set to normal pressure or negative pressure in a state where the substrate is placed in the film forming chamber. Then, the substrate is heated and a reactive gas is supplied into the film forming chamber. Then, a pyrolysis reaction or a hydrogen reduction reaction is generated on the surface of the substrate by the gas to form a vapor-phase growth film.
In order to produce a vapor-phase growth film having a large film thickness, it is necessary to uniformly heat the substrate and to bring the reactive gas supplied from the outside into contact with the substrate surface. Therefore, a technique of performing a film formation process while rotating a substrate at a high speed is adopted.
When a film forming apparatus is used for preparing a semiconductor wafer, a thermometer is required to monitor the temperature of the wafer surface in real time. The reserved observation window at the side of the reaction chamber is convenient for determining the internal condition of the chamber. However, the conventional thermometer is used for internal temperature measurement, which affects air intake uniformity and causes uneven film thickness of the wafer film.
Disclosure of Invention
The utility model aims to provide a film forming device with a temperature measuring window, which solves the problems in the prior art, and the radiation thermometer is arranged outside the reaction chamber to measure the surface temperature of a wafer through the temperature measuring mirror and the temperature measuring channel, so that the surface temperature of the wafer can be monitored remotely, the air inlet uniformity is not influenced, and the film forming thickness of the wafer is ensured to be uniform.
In order to achieve the above object, the present utility model provides the following solutions: the utility model provides a film forming device with a temperature measuring window, which comprises a temperature measuring window arranged at the top of a reaction chamber, wherein a temperature measuring mirror is arranged at the temperature measuring window, a radiation thermometer is arranged at the outer side of the temperature measuring mirror, a temperature measuring channel opposite to the radiation thermometer is vertically arranged at the inner side of the temperature measuring mirror, the temperature measuring channel is positioned above a wafer in the reaction chamber, and the radiation thermometer measures the temperature of the wafer through the temperature measuring channel; and a purging cavity is further arranged between the temperature measuring sight glass and the top end opening of the temperature measuring channel, and a transverse purging port is formed in the side part of the purging cavity in a communicating manner.
Preferably, the radiation thermometer is arranged on the adjusting slide rail in a sliding manner, and the adjusting slide rail is transversely arranged; and a plurality of temperature measuring channels are transversely arranged at intervals.
Preferably, the temperature measurement window is fixedly arranged through a first water cooling flange, and a first water cooling circulation channel is arranged in the first water cooling flange.
Preferably, the temperature measuring channel is arranged on an upper cover plate of the reaction chamber, an air inlet top plate is further arranged on the upper cover plate, and the temperature measuring sight glass is arranged on the air inlet top plate; and the air inlet top plate is also provided with the purging cavity and the transverse purging port.
Preferably, the upper cover plate is provided with the temperature measuring window and the temperature measuring sight glass; the bottom interval of upper cover plate is provided with the backup pad, vertically be provided with a plurality of logical fluorescent tubes in the backup pad, the tubulose cavity of logical fluorescent tube forms the temperature measurement passageway, the backup pad with interval between the upper cover plate forms the chamber sweeps.
Preferably, a transparent pipe plug is arranged at the top temperature measurement window of the light pipe, and a communication channel communicated with the internal cavity of the reaction chamber is formed in the support plate.
Preferably, an observation window for observing the wafer is formed in the side wall of the reaction chamber, and an observation mirror is arranged at the observation window.
Preferably, a second water cooling flange for fixing the observation mirror is arranged at the observation window, and a second water cooling circulation channel is arranged in the second water cooling flange.
Preferably, a plurality of observation windows are arranged at intervals along the circumferential direction of the reaction chamber, and the second water-cooling circulation channels in the second water-cooling flanges are communicated through water pipes; and water pipe connectors are arranged at two ends of the second water cooling flange.
Preferably, in the reaction chamber, a cylindrical heat-insulating layer is arranged below the observation window, the heat-insulating layer is connected with a lifting mechanism, and the lifting mechanism can drive the heat-insulating layer to lift and shade the observation window.
Compared with the prior art, the utility model has the following technical effects:
1. according to the utility model, the radiation thermometer is arranged outside the reaction chamber to measure the surface temperature of the wafer through the temperature measuring mirror and the temperature measuring channel, so that the surface temperature of the wafer can be monitored remotely, the air inlet uniformity is not influenced, and the film forming thickness of the wafer is ensured to be uniform;
2. according to the utility model, the purging cavity is further arranged between the temperature measuring sight glass and the temperature measuring channel, the purging cavity is communicated with a non-reaction gas source through the transverse purging port, and after the non-reaction gas is introduced into the purging cavity, the temperature measuring sight glass and the temperature measuring channel can be purged, so that impurities are prevented from adhering to the temperature measuring sight glass and the temperature measuring channel, and the temperature measuring accuracy is prevented from being influenced;
3. the side wall of the reaction chamber is also provided with an observation window for observing the wafer, and an observation mirror is arranged at the observation window. When the surface temperature of the wafer is abnormal, the wafer can have obvious deviation or flying sheet, the deviation degree of the wafer can be observed through the observation window through the observation mirror, and the wafer can be taken out in time by making a follow-up improvement scheme.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing an internal structure of a film forming apparatus according to the present utility model;
FIG. 2 is a schematic diagram of a radiation thermometer for monitoring the temperature of a wafer through a temperature measurement window;
FIG. 3 is an enlarged view of a portion of FIG. 2 at A;
FIG. 4 is a schematic view showing another internal structure of the film forming apparatus of the present utility model;
FIG. 5 is a schematic diagram of another structure of a radiation thermometer for monitoring the temperature of a wafer through a temperature measuring window;
FIG. 6 is a schematic view of the cooling water connection flow through the viewing window;
1, a temperature measuring mirror; 2. a radiation thermometer; 3. a temperature measuring channel; 4. a wafer; 5. purging the cavity; 6. a transverse purge port; 7. adjusting the sliding rail; 8. a first water-cooled flange; 9. a first water-cooled circulation passage; 10. an air intake top plate; 11. an upper cover plate; 12. a support plate; 13. a light pipe; 14. a partition plate; 15. quartz tube blocking; 16. a communicating pipe; 17. an observation mirror; 18. a fixed flange; 19. an end cap flange; 20. a second water-cooled circulation passage; 21. a water pipe; 22. a water pipe joint; 23. and a heat preservation layer.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
The utility model aims to provide a film forming device with a temperature measuring window, so as to solve the problems in the prior art, and the radiation thermometer is arranged outside the reaction chamber to measure the surface temperature of a wafer through the temperature measuring mirror and the temperature measuring channel, so that the surface temperature of the wafer can be monitored remotely, the air inlet uniformity is not influenced, and the film forming thickness of the wafer is ensured to be uniform.
In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.
As shown in fig. 1 to 6, the present embodiment provides a film forming apparatus with a temperature measurement window, including a temperature measurement window disposed at a top of a reaction chamber, a temperature measurement mirror 1 disposed at the temperature measurement window, a radiation thermometer 2 disposed outside the temperature measurement mirror 1, a temperature measurement channel 3 vertically disposed inside the temperature measurement mirror 1, the temperature measurement channel 3 facing the radiation thermometer 2, the temperature measurement channel 3 disposed above a wafer 4 in the reaction chamber, and the radiation thermometer 2 measuring temperature of the wafer 4 through the temperature measurement channel 3; a purging cavity 5 is further arranged between the temperature measuring sight glass 1 and the top end opening of the temperature measuring channel 3, and a transverse purging port 6 is arranged on the side part of the purging cavity 5 in a communicating manner.
When the radiation thermometer is used, the radiation thermometer 2 positioned outside the reaction chamber is used for measuring the surface temperature of the wafer 4 through the temperature measuring mirror 1 and the temperature measuring channel 3, so that the surface temperature of the wafer 4 can be monitored remotely, the air inlet uniformity can not be influenced, and the film forming thickness uniformity of the wafer 4 is ensured. In addition, a purging cavity 5 is further arranged between the temperature measuring sight glass 1 and the temperature measuring channel 3 in the embodiment, the purging cavity 5 is communicated with a non-reaction gas source through a transverse purging port 6, and after the non-reaction gas is introduced into the purging cavity 5, the temperature measuring sight glass 1 and the temperature measuring channel 3 can be purged, so that impurities are prevented from being attached to the temperature measuring sight glass 1 and the temperature measuring channel 3, and the temperature measuring accuracy is prevented from being influenced.
In order to measure the surface temperatures of different points of wafers 4 with different diameters, the radiation thermometer 2 in the embodiment is arranged on the adjusting slide rail 7 in a sliding way, and the adjusting slide rail 7 is transversely arranged; the temperature measuring channels 3 are transversely arranged at intervals.
In this embodiment, the temperature measurement window is fixedly set through the first water cooling flange 8, and the joint needs to be provided with a sealing member for sealing. Further, a first water cooling circulation channel 9 is arranged in the first water cooling flange 8. By arranging the first water cooling circulation channel 9, the temperature of the first water cooling flange 8 can be reduced, and leakage caused by damage of sealing elements due to overhigh temperature can be avoided. Specifically, the water cooling circulation system is a common arrangement in the art, and the specific structure thereof is not described in detail in this embodiment.
As shown in fig. 1 to 3, as one embodiment of the temperature measuring channel 3 and the purge cavity 5, the temperature measuring channel 3 is opened on an upper cover plate 11 of the reaction chamber, an air inlet top plate 10 is further arranged on the upper cover plate 11, and the temperature measuring sight glass 1 is arranged on the air inlet top plate 10; the air inlet top plate 10 is also provided with a purging cavity 5 and a transverse purging port 6. With this configuration, the reaction gas inlet passages are provided in the upper cover plate 11 and the inlet ceiling plate 10.
As shown in fig. 4 to 5, as another embodiment of the temperature measuring channel 3 and the purge cavity 5, a temperature measuring window and a temperature measuring mirror 1 are arranged on the upper cover plate 11; the bottom of the upper cover plate 11 is provided with a supporting plate 12 at intervals, a plurality of light-passing pipes 13 are vertically arranged on the supporting plate 12, tubular cavities of the light-passing pipes 13 form a temperature measuring channel 3, and a purging cavity 5 is formed at intervals between the supporting plate 12 and the upper cover plate 11. With this configuration, the reaction gas inlet passage cannot be provided in the upper cover plate 11, but is provided in the side wall of the reaction chamber. Specifically, a plurality of baffle plates 14 are arranged below the support plate 12 at intervals, air inlet cavities are formed between the baffle plates 14 and the support plate 12 and between adjacent baffle plates 14, each air inlet cavity is communicated with the reaction cavity of the reaction chamber through a conduit and is also communicated with the inlet channels in a one-to-one correspondence manner, and layered air inlet is realized.
Further, in this embodiment, a transparent pipe plug is disposed at the top opening of the light-transmitting pipe 13, and a quartz pipe plug 15 may be selected for the transparent pipe plug, and the quartz pipe plug 15 is installed at the upper end of the light-transmitting pipe 13 to prevent gas from passing through the light-transmitting pipe 13, so that the state stability in the light-transmitting pipe 13 is ensured without interference of other factors. The support plate 12 is provided with a communication pipe 16 communicating with the inner cavity of the reaction chamber, and purge gas is introduced into the reaction chamber through the communication pipe 16.
In this embodiment, the side wall of the reaction chamber is also provided with an observation window for observing the wafer 4, and an observation mirror 17 is disposed at the observation window. When the surface temperature of the wafer 4 is abnormal, the wafer 4 can have obvious deviation or flying sheet, the deviation degree of the wafer 4 can be observed through the observation window and the observation mirror 17, and the wafer 4 can be taken out in time by making a follow-up improvement scheme.
Further, in this embodiment, a second water cooling flange for fixing the observation mirror 17 is disposed at the observation window, and a second water cooling circulation channel 20 is disposed in the second water cooling flange. Specifically, the second water cooling flange comprises a fixing flange 18 and an end cover flange 19, the fixing flange 18 is fixed on the side wall of the reaction chamber, and a second water cooling circulation channel 20 is arranged inside the fixing flange. The end flange 19 is connected to the fixing flange 18 by bolts, pressing the view mirror 17 between them. Meanwhile, sealing elements are arranged between the observation mirror 17 and the fixing flange 18 and between the observation mirror and the end cover flange 19 to seal, so that leakage is prevented.
As shown in fig. 6, in order to facilitate multi-angle observation, a plurality of observation windows are arranged on the side wall of the reaction chamber at intervals along the circumferential direction of the reaction chamber, water pipe connectors 22 are arranged at two ends of the second water cooling flanges, and second water cooling circulation channels 20 in the plurality of second water cooling flanges are communicated through water pipes 21.
Further, in the reaction chamber, a cylindrical heat preservation layer 23 is arranged below the observation window, the heat preservation layer 23 is connected with a lifting mechanism, and the lifting mechanism can drive the heat preservation layer 23 to lift. In the film forming process, the heat preservation layer 23 rises under the drive of the lifting mechanism, and shields the observation window, so that the heat of the reaction cavity is prevented from being lost in a large amount through the observation window. When the position of the wafer 4 needs to be observed, the lifting mechanism drives the heat preservation layer 23 to descend so as to avoid the observation window.
The adaptation to the actual need is within the scope of the utility model.
It should be noted that it will be apparent to those skilled in the art that the present utility model is not limited to the details of the above-described exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned. .
Claims (10)
1. The film forming device is characterized by comprising a temperature measuring window arranged at the top of a reaction chamber, wherein a temperature measuring mirror is arranged at the temperature measuring window, a radiation thermometer is arranged at the outer side of the temperature measuring mirror, a temperature measuring channel opposite to the radiation thermometer is vertically arranged at the inner side of the temperature measuring mirror, the temperature measuring channel is positioned above a wafer in the reaction chamber, and the radiation thermometer measures the temperature of the wafer through the temperature measuring channel; and a purging cavity is further arranged between the temperature measuring sight glass and the top end opening of the temperature measuring channel, and a transverse purging port is formed in the side part of the purging cavity in a communicating manner.
2. The film forming apparatus with temperature measurement window according to claim 1, wherein the radiation thermometer is slidably disposed on an adjustment slide, the adjustment slide being disposed laterally; and a plurality of temperature measuring channels are transversely arranged at intervals.
3. The film forming apparatus having a temperature measurement window according to claim 2, wherein the temperature measurement window is fixedly provided by a first water cooling flange in which a first water cooling circulation passage is provided.
4. The film forming device with a temperature measurement window according to claim 1, wherein the temperature measurement channel is formed on an upper cover plate of the reaction chamber, an air inlet top plate is further arranged on the upper cover plate, and the temperature measurement sight glass is arranged on the air inlet top plate; and the air inlet top plate is also provided with the purging cavity and the transverse purging port.
5. The film forming apparatus having a temperature measurement window according to claim 4, wherein the upper cover plate is provided with the temperature measurement window and the temperature measurement mirror; the bottom interval of upper cover plate is provided with the backup pad, vertically be provided with a plurality of logical fluorescent tubes in the backup pad, the tubulose cavity of logical fluorescent tube forms the temperature measurement passageway, the backup pad with interval between the upper cover plate forms the chamber sweeps.
6. The film forming device with a temperature measurement window according to claim 5, wherein a transparent pipe plug is arranged at the temperature measurement window at the top of the light pipe, and a communication channel communicated with the internal cavity of the reaction chamber is arranged on the supporting plate.
7. The film forming apparatus having a temperature measuring window according to any one of claims 1 to 6, wherein an observation window for observing the wafer is provided on a side wall of the reaction chamber, and an observation mirror is provided at the observation window.
8. The film forming apparatus with a temperature measurement window according to claim 7, wherein a second water cooling flange for fixing the view mirror is provided at the view window, and a second water cooling circulation passage is provided in the second water cooling flange.
9. The film forming apparatus with temperature measuring window according to claim 8, wherein a plurality of the observation windows are arranged at intervals along the circumferential direction of the reaction chamber, and the second water cooling circulation channels in the plurality of the second water cooling flanges are communicated through water pipes; and water pipe connectors are arranged at two ends of the second water cooling flange.
10. The film forming apparatus with a temperature measurement window according to claim 9, wherein a cylindrical heat insulating layer is disposed below the observation window in the reaction chamber, the heat insulating layer is connected with a lifting mechanism, and the lifting mechanism can drive the heat insulating layer to lift and shade the observation window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320675394.5U CN220012889U (en) | 2023-03-31 | 2023-03-31 | Film forming device with temperature measurement window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320675394.5U CN220012889U (en) | 2023-03-31 | 2023-03-31 | Film forming device with temperature measurement window |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220012889U true CN220012889U (en) | 2023-11-14 |
Family
ID=88673523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320675394.5U Active CN220012889U (en) | 2023-03-31 | 2023-03-31 | Film forming device with temperature measurement window |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220012889U (en) |
-
2023
- 2023-03-31 CN CN202320675394.5U patent/CN220012889U/en active Active
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