CN219960535U - Gain temperature compensation circuit of radio frequency power amplifier - Google Patents
Gain temperature compensation circuit of radio frequency power amplifier Download PDFInfo
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- CN219960535U CN219960535U CN202320121237.XU CN202320121237U CN219960535U CN 219960535 U CN219960535 U CN 219960535U CN 202320121237 U CN202320121237 U CN 202320121237U CN 219960535 U CN219960535 U CN 219960535U
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- power amplifier
- radio frequency
- amplifying module
- frequency power
- gain
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 230000007423 decrease Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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Abstract
The utility model relates to a gain temperature compensation circuit of a radio frequency power amplifier, comprising: a radio frequency power amplifier integrated circuit, the radio frequency power amplifier integrated circuit comprising: the input end of the amplifying module is connected with the input signal, the output end of the amplifying module is connected with the output signal, and the radio frequency power amplifier integrated circuit further comprises: a resistor device; the resistor device is connected between the output end of the amplifying module and the output signal; and/or the resistor device is connected between the input end of the amplifying module and the input signal. The gain temperature compensation circuit of the radio frequency power amplifier has the following beneficial effects: the gain temperature compensation function of the radio frequency power amplifier integrated circuit is realized by counteracting the gain decline of the amplifying module to the temperature and controlling the output amplitude of the amplifying module through the inherent physical characteristics of the gallium arsenide semiconductor resistor device to the temperature, the implementation is simple and easy, the effect is stable, a large amount of layout area is not additionally consumed, and the cost is controlled.
Description
Technical Field
The utility model relates to the field of radio frequency power amplifiers, in particular to a gain temperature compensation circuit of a radio frequency power amplifier.
Background
The rf power amplifier is used to amplify radio signals in the rf frequency range, and the gain is one of its main parameters, describing the amplification of the output signal strength relative to the input signal strength. The existing radio frequency power amplifier is usually realized by using a gallium arsenide integrated circuit, has the advantages of high working frequency, high output power and the like, is limited by the characteristics of a gallium arsenide semiconductor device, has the phenomenon of gain reduction at the working temperature higher than room temperature, and has the phenomenon of gain increase at the working temperature lower than room temperature. The system design needs to keep the gain difference within a certain range, so that the gain difference between high temperature and low temperature needs to be reduced by using auxiliary means.
The existing technical means mainly reduces the gain difference of high temperature and low temperature by adjusting working current at different temperatures, and generally, increasing the working current increases the gain of the amplifier, so that the working current at low temperature needs to be reduced, and the working current at high temperature needs to be increased. This solution requires an additional set of circuits to regulate the operating currents at different temperatures and may negatively affect the high and low temperature characteristics of the other parameters of the rf power amplifier integrated circuit.
Disclosure of Invention
The utility model aims to solve the technical problem that the gain temperature compensation circuit of the radio frequency power amplifier is provided for overcoming the defects in the prior art.
The technical scheme adopted for solving the technical problems is as follows: a gain temperature compensation circuit for a radio frequency power amplifier is proposed, comprising: a radio frequency power amplifier integrated circuit, the radio frequency power amplifier integrated circuit comprising: the input end of the amplifying module is connected with an input signal, and the output end of the amplifying module is connected with an output signal, and the radio frequency power amplifier integrated circuit is characterized by further comprising: a resistor device;
the resistor device is connected between the output end of the amplifying module and the output signal;
and/or the resistor device is connected between the input end of the amplifying module and the input signal;
the amplifying module and the resistor device are made of gallium arsenide semiconductor devices;
the resistance of the resistive device decreases with increasing temperature.
In some embodiments, the amplifying module and the resistor device are integrated in the same gallium arsenide integrated circuit.
The gain temperature compensation circuit of the radio frequency power amplifier has the following beneficial effects: the gain temperature compensation function of the radio frequency power amplifier integrated circuit is realized by counteracting the gain decline of the amplifying module to the temperature and controlling the output amplitude of the amplifying module through the inherent physical characteristics of the gallium arsenide semiconductor resistor device to the temperature, the implementation is simple and easy, the effect is stable, a large amount of layout area is not additionally consumed, and the cost is controlled.
Drawings
The utility model will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a system block diagram of a first embodiment of a gain temperature compensation circuit for a radio frequency power amplifier of the present utility model;
FIG. 2 is a system block diagram of a second embodiment of a gain temperature compensation circuit for a radio frequency power amplifier of the present utility model;
fig. 3 is a system block diagram of a third embodiment of a gain temperature compensation circuit of a radio frequency power amplifier of the present utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
As shown in fig. 1 to 3, the gain temperature compensation circuit of the radio frequency power amplifier of the present utility model comprises: the rf power amplifier integrated circuit 100, the rf power amplifier integrated circuit 100 includes: the amplifying module 101, the input end of the amplifying module 101 is connected with an input signal, the output end of the amplifying module is connected with an output signal, and the radio frequency power amplifier integrated circuit 100 further comprises: a resistive device 102; the resistor device 102 is connected between the output end of the amplifying module and the output signal; and/or the resistive device 102 is connected between the input of the amplifying module 101 and the input signal; the amplifying module 101 and the resistor device 102 are semiconductor devices made of gallium arsenide; the resistance of the resistive device 102 decreases with increasing temperature.
Specifically, the input end of the amplifying module 101 is connected to an input signal, the input signal is a radio frequency signal, the amplifying module 101 is further connected to the power supply module 103 and a radio frequency signal ground 104, wherein the power supply module 103 provides the power supply signal for the amplifying module 101, and the radio frequency signal ground 104 is used for providing a radio frequency signal reference ground for the amplifying module 101. The main function of the amplifying module 101 is to amplify and output an input rf input signal, and the amplifying module 101 may be any existing rf signal amplifying circuit by using the prior art. The amplifying module 101 and the resistor device 102 are made of gallium arsenide semiconductor devices, the output signal of the amplifying module 101 is affected by temperature, when the working temperature is increased, the amplitude of the output signal is reduced, and the gain is reduced; when the operating temperature decreases, the output signal increases in amplitude and the gain increases. The resistor 102 connected in series to the amplifying module 101 has opposite temperature characteristics, and the higher the temperature, the smaller the resistance, and the lower the temperature, the larger the resistance of the resistor 102 as a semiconductor device.
In some embodiments, the resistive device 102 is connected in series to the output signal side of the amplifying module 101, i.e. the resistive device 102 is connected in series between the output terminal of the amplifying module 101 and the output signal. When the temperature rises, the resistance value of the resistor device 102 becomes smaller, the loss becomes smaller when the output signal of the amplifying module 101 passes through the resistor device 102, and the gain reduction amplitude becomes smaller; when the temperature decreases, the resistance of the resistor 102 increases, so that the output signal of the amplifying module 101 is lost through the resistor 102, and the gain rise is reduced.
In some embodiments, the resistive device 102 is connected in series to the input signal side of the amplifying module 101, i.e. the resistive device 102 is connected in series between the input terminal of the amplifying module 101 and the input signal. When the temperature rises, the resistance value of the resistor device 102 becomes small, the loss of the input signal is reduced, and the gain reduction amplitude of the amplifying module 101 is reduced; when the temperature decreases, the resistance of the resistor 102 increases, the input signal loss increases, and the gain rise of the amplifying module 101 decreases.
In some embodiments, the resistor device 102 may be connected in series to both the input signal side and the output signal side of the amplifying module 101, so that the gain difference of the amplifying module 101 is partially or completely cancelled, and a better gain temperature compensation effect is achieved.
The amplifying module 101 and the resistor device 102 are integrated in the same gallium arsenide integrated circuit. It can be understood that the temperature environment where the amplifying module 101 and the resistor 102 are located is consistent, and the resistance of the resistor 102 can be adjusted according to the environmental temperature, so that the gain difference of the amplifying module 101 is partially or completely counteracted, and a better gain temperature compensation effect is achieved.
It will be appreciated that in some embodiments, the amplifying module 101 may comprise a multi-stage amplifying circuit, and the stages of the multi-stage amplifying circuit may be connected in series with the resistor device 102 to achieve the gain temperature compensation effect.
The gain temperature compensation circuit of the radio frequency power amplifier has the following beneficial effects: the gain temperature compensation function of the radio frequency power amplifier integrated circuit is realized by counteracting the gain decline of the amplifying module to the temperature and controlling the output amplitude of the amplifying module through the inherent physical characteristics of the gallium arsenide semiconductor resistor device to the temperature, the implementation is simple and easy, the effect is stable, a large amount of layout area is not additionally consumed, and the cost is controlled.
The above embodiments are provided to illustrate the technical concept and features of the present utility model and are intended to enable those skilled in the art to understand the content of the present utility model and implement the same according to the content of the present utility model, and not to limit the scope of the present utility model. All equivalent changes and modifications made with the scope of the claims should be covered by the claims.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
Claims (2)
1. A radio frequency power amplifier gain temperature compensation circuit comprising: a radio frequency power amplifier integrated circuit, the radio frequency power amplifier integrated circuit comprising: the input end of the amplifying module is connected with an input signal, and the output end of the amplifying module is connected with an output signal, and the radio frequency power amplifier integrated circuit is characterized by further comprising: a resistor device;
the resistor device is connected between the output end of the amplifying module and the output signal;
and/or the resistor device is connected between the input end of the amplifying module and the input signal;
the amplifying module and the resistor device are made of gallium arsenide semiconductor devices;
the resistance of the resistive device decreases with increasing temperature.
2. The rf power amplifier gain temperature compensation circuit of claim 1, wherein the amplification module and the resistive device are integrated in the same gaas integrated circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320121237.XU CN219960535U (en) | 2023-02-01 | 2023-02-01 | Gain temperature compensation circuit of radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320121237.XU CN219960535U (en) | 2023-02-01 | 2023-02-01 | Gain temperature compensation circuit of radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219960535U true CN219960535U (en) | 2023-11-03 |
Family
ID=88537126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320121237.XU Active CN219960535U (en) | 2023-02-01 | 2023-02-01 | Gain temperature compensation circuit of radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219960535U (en) |
-
2023
- 2023-02-01 CN CN202320121237.XU patent/CN219960535U/en active Active
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