CN219930334U - CVD film forming apparatus - Google Patents
CVD film forming apparatus Download PDFInfo
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- CN219930334U CN219930334U CN202320954560.5U CN202320954560U CN219930334U CN 219930334 U CN219930334 U CN 219930334U CN 202320954560 U CN202320954560 U CN 202320954560U CN 219930334 U CN219930334 U CN 219930334U
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- China
- Prior art keywords
- inlet pipe
- air inlet
- carbon source
- source air
- film forming
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 92
- 239000010703 silicon Substances 0.000 claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 92
- 238000001816 cooling Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 92
- 239000012159 carrier gas Substances 0.000 claims description 41
- 239000002826 coolant Substances 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a CVD film forming device, which comprises a shell, a carbon source air inlet pipe, a silicon source air inlet pipe and a bearing table, wherein the shell is provided with a cavity, the carbon source air inlet pipe and the silicon source air inlet pipe are inserted on the shell in a sealing way along the height direction of the shell, the outlet end of the carbon source air inlet pipe and the outlet end of the silicon source air inlet pipe are both arranged in the cavity, at least one of the carbon source air inlet pipe and the silicon source air inlet pipe is provided with a cooling cavity so as to cool at least one of the carbon source air inlet pipe and the silicon source air inlet pipe, the bearing table is arranged in the cavity and is rotatably connected with the shell, the bearing table is provided with a bearing surface for placing a substrate, and the outlet end of the carbon source air inlet pipe and the outlet end of the silicon source air inlet pipe are both arranged towards the bearing surface. The CVD film forming device provided by the embodiment of the utility model has the advantages of high film forming quality, good film forming consistency and the like.
Description
Technical Field
The utility model relates to the technical field of semiconductor manufacturing, in particular to a CVD film forming device.
Background
The CVD equipment for preparing the silicon carbide film material is high-tech equipment integrating vacuum, high-temperature and other technologies. Specifically, the substrate is placed in a reaction chamber of normal pressure or negative pressure, and a process gas is supplied to the reaction chamber from the upper portion of the reaction chamber through a gas inlet pipe while heating the substrate during the process, and the process gas enters the reaction chamber to undergo a thermal reaction at the surface of the substrate, so that an epitaxial single crystal film is formed on the surface of the substrate.
In the related art, when the process gas in the gas inlet pipe is heated by heat radiation and mixed by convection, the process gas is deposited on the surface of the gas inlet pipe and forms silicon carbide crystals, and as time goes by, the accumulation of the silicon carbide crystals is gradually expanded and finally falls to the surface of the substrate at the lower part to affect the film forming quality; in addition, silicon carbide crystals accumulate on the inner surface of the gas inlet pipe and affect the flow area of the gas inlet pipe, thereby affecting the distribution of process gas in the reaction chamber and further affecting the consistency of the film forming process.
Disclosure of Invention
The present utility model aims to solve at least one of the technical problems in the related art to some extent. Therefore, embodiments of the present utility model provide a CVD film forming apparatus having high film forming quality and good film forming uniformity.
The CVD film forming device comprises a shell, a carbon source air inlet pipe, a silicon source air inlet pipe and a bearing table, wherein the shell is provided with a cavity, the carbon source air inlet pipe and the silicon source air inlet pipe are inserted on the shell in a sealing manner along the height direction of the shell, the outlet end of the carbon source air inlet pipe and the outlet end of the silicon source air inlet pipe are both arranged in the cavity, and at least one of the carbon source air inlet pipe and the silicon source air inlet pipe is provided with a cooling cavity so as to cool at least one of the carbon source air inlet pipe and the silicon source air inlet pipe;
the bearing table is arranged in the cavity and rotatably connected with the shell, a bearing surface for placing a substrate is arranged on the bearing table, and the outlet end of the carbon source air inlet pipe and the outlet end of the silicon source air inlet pipe are both arranged towards the bearing surface.
In some embodiments, the carbon source air inlet pipe is provided with a first cooling cavity and a first air inlet channel which are arranged at intervals, and the first cooling cavity is arranged around the first air inlet channel;
the silicon source air inlet pipe is provided with a second cooling cavity and a second air inlet channel which are arranged at intervals, and the second cooling cavity is arranged around the second air inlet channel.
In some embodiments, the carbon source air inlet pipe is further provided with a first cooling medium inlet and a first cooling medium outlet which are communicated with the first cooling cavity; and/or
The silicon source air inlet pipe is provided with a second cooling medium inlet and a second cooling medium outlet which are communicated with the second cooling cavity.
In some embodiments, the CVD film forming apparatus according to the embodiments of the present utility model further includes a carrier gas inlet pipe, the carrier gas inlet pipe is sealingly inserted into the housing, the carrier gas inlet pipe is disposed between the carbon source inlet pipe and the silicon source inlet pipe, and an outlet end of the carrier gas inlet pipe is disposed in the chamber.
In some embodiments, the carrier gas inlet conduit has a third cooling cavity and a third inlet passage disposed in spaced relation, the third cooling cavity being disposed around the third inlet passage.
In some embodiments, the carrier gas inlet pipe is further provided with a third cooling medium inlet and a third cooling medium outlet communicated with the third cooling cavity.
In some embodiments, the CVD film forming apparatus according to the embodiments of the present utility model further includes a flow equalizing plate, where the flow equalizing plate is disposed in the chamber and connected to the housing, and in a height direction of the housing, an outlet end of the carrier gas inlet pipe is disposed at an interval from the flow equalizing plate, and the flow equalizing plate is provided with a first through hole, a second through hole, and a plurality of flow equalizing holes disposed at intervals, where the first through hole is through by the carbon source inlet pipe, and the second through hole is through by the silicon source inlet pipe.
In some embodiments, the number of the flow equalizing plates is a plurality, and the plurality of flow equalizing plates are arranged at intervals in the height direction of the shell.
In some embodiments, the flow equalization plate has at least one cut-out on its outer perimeter.
In some embodiments, the cross-sectional area of the outlet end of the carbon source air inlet pipe gradually increases in a direction toward the bearing surface; and/or
The cross-sectional area of the outlet end of the silicon source air inlet pipe gradually increases along the direction towards the bearing surface.
In the using process of the CVD film forming device, at least one of the carbon source air inlet pipe and the silicon source air inlet pipe is provided with the cooling cavity so as to cool down at least one of the carbon source gas and the silicon source gas, so that the outlet temperature of at least one of the carbon source gas and the silicon source gas is lower, and the process reaction of the carbon source gas and the silicon source gas in the carbon source air inlet pipe and the silicon source air inlet pipe is inhibited, thereby avoiding the formation of silicon carbide crystals in the carbon source air inlet pipe and the silicon source air inlet pipe. On one hand, the silicon carbide crystals can be prevented from falling onto the substrate due to excessive accumulation, and the film forming quality is improved; on the other hand, the silicon carbide crystal can be prevented from being accumulated on the inner wall of the carbon source air inlet pipe and the inner wall of the silicon source air inlet pipe to influence the flow area, so that the carbon source gas and the silicon source gas are uniformly distributed in the chamber, and the consistency of film formation is good.
Therefore, the CVD film forming device provided by the embodiment of the utility model has the advantages of high film forming quality, good film forming consistency and the like.
Drawings
FIG. 1 is a cross-sectional view of a CVD film forming apparatus according to an embodiment of the present utility model.
FIG. 2 is a schematic view showing a partial structure of a CVD film forming apparatus according to an embodiment of the present utility model.
FIG. 3 is a schematic view showing the structure of a flow straightener of a CVD film forming apparatus according to an embodiment of the present utility model.
Reference numerals:
a CVD film forming apparatus 100;
a housing 1; a chamber 101;
a carbon source air inlet pipe 2; a first cooling chamber 201; a first intake passage 202; a first cold medium inlet 203; a first cold medium outlet 204;
a silicon source air inlet pipe 3; a second cooling chamber 301; a second intake passage 302; a second cold medium inlet 303; a second cold medium outlet 304;
a carrying table 4; a bearing surface 401;
a carrier gas inlet pipe 5; a third cooling chamber 501; a third intake passage 502; a third cold medium inlet 503; a third cold medium outlet 504;
a flow equalizing plate 6; a first through hole 601; a second through hole 602; flow equalizing holes 603; cut 604.
Detailed Description
Reference will now be made in detail to embodiments of the present utility model, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the drawings are illustrative and intended to explain the present utility model and should not be construed as limiting the utility model.
The technical scheme of the present utility model will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 to 3, a CVD film forming apparatus 100 according to an embodiment of the present utility model includes a housing 1, a carbon source gas inlet pipe 2, a silicon source gas inlet pipe 3, and a susceptor 4. The housing 1 is provided with a chamber 101, the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3 are inserted on the housing 1 in a sealing manner along the height direction of the housing 1, the outlet end of the carbon source air inlet pipe 2 and the outlet end of the silicon source air inlet pipe 3 are both arranged in the chamber 101, and at least one of the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3 is provided with a cooling cavity so as to cool at least one of the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3. The bearing table 4 is arranged in the chamber 101 and is rotatably connected with the shell 1, the bearing table 4 is provided with a bearing surface 401 for placing a substrate, and the outlet end of the carbon source air inlet pipe 2 and the outlet end of the silicon source air inlet pipe 3 are both arranged towards the bearing surface 401.
At least one of the carbon source gas inlet pipe 2 and the silicon source gas inlet pipe 3 has a cooling cavity to cool at least one of the carbon source gas inlet pipe 2 and the silicon source gas inlet pipe 3, it is understood that only the carbon source gas inlet pipe 2 has a cooling cavity to cool the carbon source gas, or only the silicon source gas inlet pipe 3 has a cooling cavity to cool the silicon source gas, or both the carbon source gas inlet pipe 2 and the silicon source gas inlet pipe 3 have a cooling cavity to cool the carbon source gas or the silicon source gas entering the chamber 101.
Among them, a carbon source gas such as propane (C3H 8) or the like, and a silicon source gas such as silane (SiH 4) or a chlorine-containing gas such as SiHCl 2, siHCl3, siCl4 or the like.
In the use process of the CVD film forming apparatus 100 according to the embodiment of the utility model, a substrate is placed on the carrying surface 401 of the carrying table 4, the carrying table 4 rotates at a high speed to drive the substrate to rotate at a high speed, a carbon source gas enters the chamber 101 through the carbon source gas inlet pipe 2, a silicon source gas enters the chamber 101 through the silicon source gas inlet pipe 3, and the silicon source gas is mixed on the surface of the substrate and undergoes a process reaction to form an epitaxial film.
Because at least one of the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3 is provided with a cooling cavity to cool at least one of the carbon source gas and the silicon source gas, the outlet temperature of at least one of the carbon source gas and the silicon source gas is lower, and the process reaction of the carbon source gas and the silicon source gas in the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3 is restrained, so that silicon carbide crystals can be prevented from being formed on the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3. On one hand, the silicon carbide crystals can be prevented from falling onto the substrate due to excessive accumulation, and the film forming quality is improved; on the other hand, the silicon carbide crystal can be prevented from being accumulated on the inner wall of the carbon source air inlet pipe 2 and the inner wall of the silicon source air inlet pipe 3 to influence the flow area, so that the carbon source gas and the silicon source gas are uniformly distributed in the chamber 101, and the consistency of film formation is good.
Therefore, the CVD film forming apparatus 100 according to the embodiment of the utility model has advantages such as high film forming quality and good film forming uniformity.
Optionally, the number of the carbon source air inlet pipe 2 and the silicon source air inlet pipe 3 is multiple, the multiple carbon source air inlet pipes 2 and the multiple silicon source air inlet pipes 3 are arranged at intervals, and the distribution of the carbon source gas and the silicon source gas in the cavity is facilitated by arranging the multiple carbon source air inlet pipes 2 and the multiple silicon source air inlet pipes 3, so that the carbon source gas and the silicon source gas are distributed uniformly in the cavity, the carbon source gas and the silicon source gas are uniformly mixed on the substrate, and the film forming quality is further facilitated to be improved.
In some embodiments, the carbon source air inlet pipe 2 is provided with a first cooling cavity 201 and a first air inlet channel 202 which are arranged at intervals, and the first cooling cavity 201 is arranged around the first air inlet channel 202. The silicon source air inlet pipe 3 is provided with a second cooling cavity 301 and a second air inlet channel 302 which are arranged at intervals, and the second cooling cavity 301 is arranged around the second air inlet channel 302.
For example, as shown in fig. 1 and 2, the carbon source gas enters the first intake passage 202 through the inlet end of the carbon source intake pipe 2 and flows into the chamber 101 through the outlet end of the carbon source intake pipe 2. By disposing the first cooling chamber 201 around the first air intake passage 202, uniformity of cooling the carbon source gas is facilitated to be improved, thereby facilitating improvement of cooling effect of the carbon source gas. The silicon source gas enters the second air inlet channel 302 through the inlet end of the silicon source air inlet pipe 3 and flows into the cavity 101 through the outlet end of the silicon source air inlet pipe 3, and the second cooling cavity 301 is arranged around the first air inlet channel 202, so that the uniformity of cooling the silicon source gas is improved, and the cooling effect of the silicon source gas is improved.
Optionally, the carbon source air inlet pipe 2 is further provided with a first cooling medium inlet 203 and a first cooling medium outlet 204 which are communicated with the first cooling cavity 201.
For example, as shown in fig. 1 and 2, the first cooling medium inlet 203 and the first cooling medium outlet 204 are both provided at the top end of the carbon source gas inlet pipe 2. The cooling medium can be cooling water, and the cooling medium enters the first cooling cavity 201 through the first cooling medium inlet 203 and flows out through the first cooling medium outlet 204, so that the cooling medium flows and cools in the first cooling cavity 201, thereby being beneficial to improving the heat exchange effect of the cooling medium and the carbon source air inlet pipe 2, and further being beneficial to improving the cooling effect of the carbon source gas.
Optionally, the silicon source air inlet pipe 3 is provided with a second cooling medium inlet 303 and a second cooling medium outlet 304 which are communicated with the second cooling cavity 301.
For example, as shown in fig. 1 and 2, the second cooling medium inlet 303 and the second cooling medium outlet 304 are both provided at the top end of the silicon source gas inlet pipe 3. The cooling medium can be cooling water, and enters the second cooling cavity 301 through the second cooling medium inlet 303 and flows out through the second cooling medium outlet 304, so that the cooling medium circularly flows in the second cooling cavity 301, thereby being beneficial to improving the heat exchange effect of the cooling medium and the silicon source air inlet pipe 3, and further being beneficial to improving the cooling effect of the silicon source air.
In some embodiments, the CVD film forming apparatus 100 according to the embodiment of the utility model further includes a carrier gas inlet pipe 5, the carrier gas inlet pipe 5 is sealed on the cartridge housing 1, the carrier gas inlet pipe 5 is disposed between the carbon source inlet pipe 2 and the silicon source inlet pipe 3, and an outlet end of the carrier gas inlet pipe 5 is disposed in the chamber 101.
For example, as shown in fig. 1 and 2, the carrier gas may be hydrogen or nitrogen. Because the carrier gas inlet pipe 5 is arranged between the carbon source inlet pipe 2 and the silicon source inlet pipe 3 and the carrier gas inlet pipe 5 is arranged between the carbon source inlet pipe 2 and the silicon source inlet pipe 3, after the carrier gas enters the chamber 101 through the outlet end of the carrier gas inlet pipe 5, the carbon source gas and the silicon source gas entering the chamber 101 can be separated, so that the carbon source gas and the silicon source gas are prevented from being mixed in the carbon source inlet pipe 2 and the silicon source inlet pipe 3 in a contact manner to generate a process reaction.
Alternatively, the carbon source gas inlet pipe 2, the silicon source gas inlet pipe 3, and the carrier gas inlet pipe 5 are made of stainless steel or titanium alloy materials.
Alternatively, the carrier gas intake pipe 5 has a third cooling chamber 501 and a third intake passage 502 arranged at intervals, the third cooling chamber 501 being arranged around the third intake passage 502.
For example, as shown in fig. 1 and 2, the carrier gas enters the third air intake passage 502 through the inlet end of the carrier gas intake pipe 5, and flows into the chamber 101 through the outlet end of the carrier gas intake pipe 5. Through setting up third cooling chamber 501 around third inlet channel 502, be favorable to improving the homogeneity to the carrier gas cooling, be favorable to improving the cooling effect to the carrier gas, prevent that the carrier gas from transmitting to carbon source gas and silicon source gas because of the high temperature, further be favorable to improving film forming quality.
Optionally, the carrier gas inlet pipe 5 further has a third cooling medium inlet 503 and a third cooling medium outlet 504, which are in communication with the third cooling chamber 501.
For example, as shown in fig. 1 and 2, the third cooling medium inlet 503 and the third cooling medium outlet 504 are both provided at the top end of the carbon source gas inlet pipe 2. The cooling medium can be cooling water, and enters the third cooling cavity 501 through the third cooling medium inlet 503 and flows out through the third cooling medium outlet 504, so that the cooling medium circularly flows in the third cooling cavity 501, which is further beneficial to improving the heat exchange effect of the cooling medium and the carrier gas inlet pipe 5, and is further beneficial to improving the cooling effect on the carrier gas.
In some embodiments, the CVD film forming apparatus 100 according to the embodiment of the present utility model further includes a flow equalizing plate 6, where the flow equalizing plate 6 is disposed in the chamber 101 and connected to the housing 1, and an outlet end of the carrier gas inlet pipe 5 is spaced from the flow equalizing plate 6 in the height direction of the housing 1. The flow equalizing plate 6 is provided with a first through hole 601, a second through hole 602 and a plurality of flow equalizing holes 603 which are arranged at intervals, the first through hole 601 is used for the carbon source air inlet pipe 2 to pass through, and the second through hole 602 is used for the silicon source air inlet pipe 3 to pass through.
For example, as shown in fig. 1 to 3, the outer peripheral surface of the flow equalizing plate 6 is connected to the inner wall surface of the housing 1, the lower end of the carbon source gas inlet pipe 2 passes through the first through hole 601, the lower end of the silicon source gas inlet pipe 3 passes through the second through hole 602, and a buffer chamber is formed between the flow equalizing plate 6 and the top end of the housing 1. When the carrier gas first enters the buffer chamber through the carrier gas inlet pipe 5, then flows into the surface of the substrate through the flow equalizing holes 603. By arranging the flow equalizing plate 6, the uniformity of the carrier gas distributed in the chamber 101 is improved, so that the carbon source gas and the silicon source gas can be effectively separated, and the flow of the carbon source gas and the silicon source gas can be pushed, so that the flow efficiency of the carbon source gas and the silicon source gas is improved, and the film forming efficiency of a substrate is improved.
Alternatively, the flow equalizing plate 6 is made of a high temperature resistant material such as graphite coated with silicon carbide.
Optionally, the number of the flow equalizing plates 6 is multiple, and the multiple flow equalizing plates 6 are arranged at intervals in the height direction of the shell 1 to form multiple independent chambers, so that the carrier gas forms a gradient pressure field in the chambers, and the uniformity and stability of the carrier gas flow are further improved.
In some embodiments, at least one cutout 604 is provided on the outer peripheral surface of the flow equalization plate 6.
For example, as shown in fig. 3, two opposite notches 604 are provided on the outer peripheral surface of the flow equalization plate 6, and the outline of the notches 604 is V-shaped in the projection in the thickness direction of the flow equalization plate 6. When the flow equalization plate 6 is in operation, the high temperature required by the reaction of the process gas in the chamber 101 easily causes the flow equalization plate to generate thermal expansion deformation, and at least one notch 604 is arranged on the peripheral surface of the flow equalization plate 6 to compensate the deformation of the flow equalization plate 6 at high temperature, thereby reducing internal thermal stress and being beneficial to improving the operational reliability of the flow equalization plate 6.
Alternatively, as shown in fig. 2, the cross-sectional area of the outlet end of the carbon source gas inlet pipe 2 becomes gradually larger in the direction toward the bearing surface 401, which is advantageous in suppressing convection of the carbon source gas in the vicinity of the outlet end of the carbon source gas inlet pipe 2 and suppressing progress of the process reaction.
Alternatively, the cross-sectional area of the outlet end of the silicon source gas inlet pipe 3 becomes gradually larger in the direction toward the bearing surface 401, which is advantageous in suppressing convection of the silicon source gas in the vicinity of the outlet end of the silicon source gas inlet pipe 3 and suppressing progress of the process reaction.
In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present utility model, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present utility model, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
For purposes of this disclosure, the terms "one embodiment," "some embodiments," "example," "a particular example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While the above embodiments have been shown and described, it should be understood that the above embodiments are illustrative and not to be construed as limiting the utility model, and that variations, modifications, alternatives, and variations of the above embodiments may be made by those of ordinary skill in the art without departing from the scope of the utility model.
Claims (10)
1. A CVD film forming apparatus, comprising:
a housing (1), the housing (1) having a chamber (101);
the carbon source air inlet pipe (2) and the silicon source air inlet pipe (3) are inserted on the shell (1) in a sealing manner along the height direction of the shell (1), the outlet end of the carbon source air inlet pipe (2) and the outlet end of the silicon source air inlet pipe (3) are both arranged in the cavity (101), and at least one of the carbon source air inlet pipe (2) and the silicon source air inlet pipe (3) is provided with a cooling cavity so as to cool at least one of the carbon source air inlet pipe (2) and the silicon source air inlet pipe (3); and
the bearing table (4), the bearing table (4) is arranged in the cavity (101) and is rotatably connected with the shell (1), the bearing table (4) is provided with a bearing surface (401) for placing a substrate, and the outlet end of the carbon source air inlet pipe (2) and the outlet end of the silicon source air inlet pipe (3) are both arranged towards the bearing surface (401).
2. The CVD film forming apparatus according to claim 1, wherein the carbon source gas inlet pipe (2) has first cooling chambers (201) and first gas inlet passages (202) provided at intervals, the first cooling chambers (201) being provided around the first gas inlet passages (202);
the silicon source air inlet pipe (3) is provided with a second cooling cavity (301) and a second air inlet channel (302) which are arranged at intervals, and the second cooling cavity (301) is arranged around the second air inlet channel (302).
3. The CVD film forming apparatus according to claim 2, wherein the carbon source gas inlet pipe (2) further has a first cooling medium inlet (203) and a first cooling medium outlet (204) that communicate with the first cooling chamber (201); and/or
The silicon source air inlet pipe (3) is provided with a second cooling medium inlet (303) and a second cooling medium outlet (304) which are communicated with the second cooling cavity (301).
4. The CVD film forming apparatus according to claim 1, further comprising a carrier gas intake pipe (5), the carrier gas intake pipe (5) being sealingly inserted in the housing (1), the carrier gas intake pipe (5) being provided between the carbon source intake pipe (2) and the silicon source intake pipe (3), an outlet end of the carrier gas intake pipe (5) being disposed in the chamber (101).
5. The CVD film forming apparatus according to claim 4, wherein the carrier gas inlet pipe (5) has a third cooling chamber (501) and a third inlet passage (502) provided at intervals, the third cooling chamber (501) being provided around the third inlet passage (502).
6. The CVD film forming apparatus according to claim 5, wherein the carrier gas inlet pipe (5) further has a third cooling medium inlet (503) and a third cooling medium outlet (504) communicating with the third cooling chamber (501).
7. The CVD film forming apparatus according to claim 4, further comprising a flow equalizing plate (6), wherein the flow equalizing plate (6) is disposed in the chamber (101) and connected to the housing (1), the outlet end of the carrier gas intake pipe (5) is disposed at an interval from the flow equalizing plate (6) in the height direction of the housing (1), the flow equalizing plate (6) has a first through hole (601), a second through hole (602) and a plurality of flow equalizing holes (603) disposed at intervals, the first through hole (601) is provided for the carbon source intake pipe (2) to pass through, and the second through hole (602) is provided for the silicon source intake pipe (3) to pass through.
8. The CVD film forming apparatus according to claim 7, wherein the number of the flow equalization plates (6) is plural, and the plurality of flow equalization plates (6) are provided at intervals in the height direction of the housing (1).
9. The CVD film forming apparatus according to claim 7, wherein at least one slit (604) is provided on an outer peripheral surface of the flow straightening plate (6).
10. The CVD film forming apparatus according to claim 1, wherein a cross-sectional area of an outlet end of the carbon source gas inlet pipe (2) becomes gradually larger in a direction toward the carrying surface (401); and/or
The cross-sectional area of the outlet end of the silicon source air inlet pipe (3) gradually increases along the direction towards the bearing surface (401).
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| CN202320954560.5U CN219930334U (en) | 2023-04-21 | 2023-04-21 | CVD film forming apparatus |
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| CN202320954560.5U CN219930334U (en) | 2023-04-21 | 2023-04-21 | CVD film forming apparatus |
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