CN219890371U - Measuring table of silicon wafer chamfering machine - Google Patents
Measuring table of silicon wafer chamfering machine Download PDFInfo
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- CN219890371U CN219890371U CN202321495995.4U CN202321495995U CN219890371U CN 219890371 U CN219890371 U CN 219890371U CN 202321495995 U CN202321495995 U CN 202321495995U CN 219890371 U CN219890371 U CN 219890371U
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- chamfering machine
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 238000005259 measurement Methods 0.000 claims abstract description 54
- 238000001514 detection method Methods 0.000 claims abstract description 52
- 230000002093 peripheral effect Effects 0.000 claims abstract description 32
- 238000005286 illumination Methods 0.000 claims description 36
- 238000003384 imaging method Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 78
- 238000012545 processing Methods 0.000 abstract description 10
- 230000000007 visual effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
The utility model discloses a silicon wafer chamfering machine measuring table, which comprises an equipment rack, a measuring platform and a detecting assembly, wherein the measuring platform is at least partially arranged on the equipment rack and is used for bearing silicon wafers; the detection assembly is at least partially disposed on the equipment rack. The detection component comprises a thickness measuring device, a peripheral contour detecting device and a groove detecting device, wherein the thickness measuring device, the peripheral contour detecting device and the groove detecting device are arranged around the measuring platform. Through the arrangement, the silicon wafer chamfering machine measuring table integrates the detection function through the arrangement of the detection assembly, so that the silicon wafer can be detected in real time without transferring the silicon wafer, the detection cost of the silicon wafer processing can be reduced, and the detection precision of the silicon wafer can be improved. The detection assembly surrounds the measurement platform, so that the structural compactness of the measurement platform of the silicon wafer chamfering machine can be improved, and the space occupancy rate of the measurement platform of the silicon wafer chamfering machine is reduced.
Description
Technical Field
The utility model relates to the technical field of silicon wafer processing, in particular to a measuring table of a silicon wafer chamfering machine.
Background
The existing chamfering machine is required to be matched with a profilometer for use, the cost of the profilometer is high, in addition, in the silicon wafer processing process, measurement and processing are required to be conducted back and forth between two pieces of equipment, processing data and detection data of the two pieces of equipment are separated, compensation is conducted manually according to the detection result, and time and labor cost are wasted. In addition, in the continuous processing process, detection compensation can be performed only after the same batch of processing, so that the time delay is provided, and real-time monitoring cannot be performed.
Disclosure of Invention
In order to solve the defects in the prior art, the utility model aims to provide a silicon wafer chamfering machine measuring table capable of integrating a detection function.
In order to achieve the above purpose, the present utility model adopts the following technical scheme:
a silicon wafer chamfering machine measurement table comprising: an equipment rack; the measuring platform is at least partially arranged on the equipment rack and is used for bearing the silicon wafer; the detection assembly is at least partially arranged on the equipment rack; the detection component comprises a thickness measuring device, a peripheral contour detecting device and a groove detecting device, wherein the thickness measuring device, the peripheral contour detecting device and the groove detecting device are arranged around the measuring platform.
Further, the thickness measuring device is at least partially arranged at the rear side of the measuring platform, the peripheral measuring device is at least partially arranged at the left side or the right side of the measuring platform, the peripheral contour detecting device is at least partially arranged at the rear side of the measuring platform, and the groove detecting device is at least partially arranged at the left side or the right side of the measuring platform.
Further, the thickness measuring device is fixedly connected with the equipment rack, the thickness measuring device comprises a first laser measuring mechanism and a second laser measuring mechanism, the first laser measuring mechanism is arranged on the upper side of the second laser measuring mechanism, and the measuring platform is at least partially arranged between the first laser measuring mechanism and the second laser measuring mechanism.
Further, the peripheral measuring device is fixedly connected with the equipment rack, the peripheral measuring device comprises a transmitting end and a receiving end, the transmitting end is arranged on the upper side or the lower side of the receiving end, and the measuring platform is at least partially arranged between the transmitting end and the receiving end.
Further, periphery contour detection device and equipment frame fixed connection, periphery contour detection device include lighting mechanism and vision mechanism, and lighting mechanism and vision mechanism set up in measuring platform's both sides at least partially, and lighting mechanism, vision mechanism all keep unanimous with measuring platform's height.
Further, the illumination mechanism includes a first adjustment stage for adjusting an illumination angle of the illumination mechanism, the first adjustment stage being at least partially disposed on the equipment rack, the vision mechanism includes a second adjustment stage for adjusting a position and an imaging angle of the vision mechanism, the second adjustment stage being at least partially disposed on the equipment rack.
Further, the illumination mechanism has a rotational degree of freedom, and the vision mechanism has a plurality of directions of movement degrees of freedom and rotational degrees of freedom.
Further, the vision mechanism also comprises a driving part, and the driving part controls and adjusts the position and the angle of the second adjusting platform.
Further, the groove detection device is fixedly connected with the equipment rack, the groove detection device comprises a first visual mechanism, a second visual mechanism, a first lighting mechanism and a second lighting mechanism, the first visual mechanism is arranged on the upper side of the second visual mechanism, the measuring platform is at least partially arranged between the first visual mechanism and the second visual mechanism, the first lighting mechanism is at least partially arranged on the upper side of the measuring platform, the second lighting mechanism is at least partially arranged on the left side or the right side of the measuring platform, and the second lighting mechanism is consistent with the measuring platform in height.
Further, the measuring platform comprises a rotating mechanism and a turntable mechanism for placing silicon wafers, the rotating mechanism is arranged on the equipment rack, and the rotating mechanism is rotationally connected with the turntable mechanism.
The measuring table of the silicon wafer chamfering machine provided by the utility model can integrate the detection function by arranging the detection component, so that each item of data of the silicon wafer can be detected in real time without transferring the silicon wafer, thereby not only reducing the detection cost of processing the silicon wafer, but also improving the detection precision of the silicon wafer. In addition, the detection assembly surrounds the measuring platform, so that the structural compactness of the measuring platform of the silicon wafer chamfering machine can be improved, and the space occupation rate of the measuring platform of the silicon wafer chamfering machine can be reduced.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a silicon wafer chamfering machine measuring table of the present utility model.
FIG. 2 is a top view of the wafer bevel machine measurement table of the present utility model.
FIG. 3 is a side view of a silicon wafer chamfering machine measurement table of the present utility model.
FIG. 4 is a schematic view of the overall structure of another angle of the wafer chamfering machine measuring table of the present utility model.
FIG. 5 is a schematic view of a part of the structure of the measuring table of the silicon wafer chamfering machine.
Detailed Description
In order to make the present utility model better understood by those skilled in the art, the technical solutions in the specific embodiments of the present utility model will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present utility model.
As shown in fig. 1, a silicon wafer chamfering machine measuring table 100 includes an equipment rack 11, a measuring platform 12 and a detecting assembly 13. The equipment rack 11 is the basic frame of the silicon wafer chamfering machine measurement table 100. The measurement platform 12 is at least partially disposed on the equipment rack 11 for carrying silicon wafers. The detecting component 13 is at least partially arranged on the equipment rack 11 and is used for detecting various data of the silicon chip. For clarity of explanation of the technical solution of the present utility model, the front side, the rear side, the left side, the right side, the upper side, and the lower side are also defined as shown in fig. 1. Specifically, the detection assembly 13 includes a thickness measuring device 131, an outer circumference measuring device 132, an outer circumference contour detecting device 133, and a groove detecting device 134. A thickness measuring device 131, a peripheral measuring device 132, a peripheral contour detecting device 133, and a groove detecting device 134 are provided around the measurement platform 12. Through the arrangement, the silicon wafer chamfering machine measuring table 100 integrates the detection function through the detection component 13, and the detection component 13 is arranged around the measuring platform 12, so that each item of data of the silicon wafer can be detected in real time without transferring the silicon wafer, and the silicon wafer is compensated in real time according to the detection result, thereby not only reducing the detection cost of processing the silicon wafer, but also improving the detection precision. In addition, the detection assembly 13 is arranged around the measuring platform, so that the structural compactness of the silicon wafer chamfering machine measuring platform 100 can be improved, and the space occupation rate of the silicon wafer chamfering machine measuring platform 100 can be reduced.
As shown in fig. 2, as an alternative implementation, the thickness measuring device 131 is at least partially disposed on the rear side of the measuring platform 12, the outer circumference measuring device 132 is at least partially disposed on the left or right side of the measuring platform 12, the outer circumference contour detecting device 133 is at least partially disposed on the rear side of the measuring platform 12, and the groove detecting device 134 is at least partially disposed on the left or right side of the measuring platform 12. Through the arrangement, the thickness measuring device 131, the peripheral measuring device 132, the peripheral contour detecting device 133 and the groove detecting device 134 are arranged around the measuring platform 12, so that the silicon wafer can be detected in real time, the qualification rate of the silicon wafer is improved, the structure of the silicon wafer chamfering machine measuring table 100 is more compact, and the structural stability of the silicon wafer chamfering machine measuring table 100 is improved. It should be understood that the arrangement of the detecting assembly 13 provided in the embodiment of the present utility model is only a preferred embodiment, and the thickness measuring device 131, the peripheral measuring device 132, the peripheral contour detecting device 133 and the groove detecting device 134 are disposed around the measuring platform 12 to achieve the detecting function.
As shown in fig. 3, as one implementation, the thickness measuring device 131 is fixedly connected to the equipment rack 11. The thickness measuring device 131 includes a first laser measuring mechanism 1311 and a second laser measuring mechanism 1312, the first laser measuring mechanism 1311 being disposed on an upper side or a lower side of the second laser measuring mechanism 1312, and the measuring platform 12 being at least partially disposed between the first laser measuring mechanism 1311 and the second laser measuring mechanism 1312. Specifically, the first laser measurement mechanism 1311 and the second laser measurement mechanism 1312 may be provided as laser sensors. Through the arrangement, the first laser measuring mechanism 1311 and the second laser measuring mechanism 1312 respectively measure the distance from the upper surface of the silicon wafer to the first laser measuring mechanism 1311 and the distance from the lower surface of the silicon wafer to the second laser measuring mechanism 1312, and thickness measurement data of the silicon wafer can be obtained through comparison calculation with the distance between the first laser measuring mechanism 1311 and the second laser measuring mechanism 1312.
As shown in fig. 4, as one implementation, the peripheral measurement device 132 is fixedly connected to the equipment rack 11. The peripheral measurement device 132 includes a transmitting end 1321 and a receiving end 1322, the transmitting end 1321 is disposed on an upper side or a lower side of the receiving end 1322, and the measurement platform 12 is at least partially disposed between the transmitting end 1321 and the receiving end 1322. Specifically, the peripheral measurement device 132 may be configured as a laser micrometer, and the laser light between the transmitting end 1321 and the receiving end 1322 is perpendicular to the measurement platform 12, so that an error of the measurement result may be reduced. With the above arrangement, the peripheral measurement device 132 can measure the distance from the edge of the silicon wafer to the rotation center of the silicon wafer, thereby calculating the diameter of the silicon wafer. As an alternative implementation manner, after the silicon wafer rotates by 90 °, the peripheral measurement device 132 performs one measurement on the silicon wafer, and averages the data of four measurements to be used as diameter data of the silicon wafer, so as to improve accuracy of the diameter data of the silicon wafer, and further improve detection accuracy of the measurement table 100 of the silicon wafer chamfering machine.
As one implementation, the peripheral contour detection device 133 is fixedly connected to the equipment rack 11. The peripheral contour detecting device 133 includes an illumination mechanism 1331 and a vision mechanism 1332, the illumination mechanism 1331 and the vision mechanism 1332 are at least partially disposed on both sides of the measuring platform 12, and the illumination mechanism 1331 and the vision mechanism 1332 are consistent with the height of the measuring platform 12. Specifically, two light blocking sheets are disposed on the right side of the illumination mechanism 1331 in the left-right direction along the silicon wafer chamfering machine measuring table 100, so that the light emitted by the illumination mechanism 1331 irradiates the edge of the silicon wafer through the gap between the two light blocking sheets, and therefore scattering caused by non-parallelism of the light and the silicon wafer can be reduced. Through the above arrangement, the imaging effect of the vision mechanism 1332 can be improved, the detection effect of the peripheral contour detection device 133 can be improved, and the detection accuracy of the silicon wafer chamfering machine measuring table 100 can be improved.
In the present embodiment, the illumination mechanism 1331 includes a first adjustment platform 1331a for adjusting an illumination angle of the illumination mechanism 1331, the first adjustment platform 1331a is at least partially disposed on the equipment rack 11, and the first adjustment platform 1331a is fixedly connected with the equipment rack 11. The vision mechanism 1332 includes a second adjustment platform 1332a for adjusting the position and imaging angle of the vision mechanism 1332, the second adjustment platform 1332a being at least partially disposed on the equipment rack 11, the second adjustment platform 1332a being fixedly connected to the equipment rack 11. With the above arrangement, the illumination mechanism 1331 can change the illumination angle through the first adjustment platform 1331a, and the vision mechanism 1332 can change the relative position and imaging angle of the vision mechanism 1332 through the second adjustment platform 1332a, so that the detection effect and detection accuracy of the peripheral profile detection device 133 can be improved.
In the present embodiment, the illumination mechanism 1331 has a rotational degree of freedom, and the vision mechanism 1332 has a plurality of directions of movement degrees of freedom and rotational degrees of freedom. Specifically, the first adjusting platform 1331a may be configured as a mechanical rotating component, and an angle scale is provided on the first adjusting platform 1331a, so that the lighting mechanism 1331 can manually adjust the pitch angle of the lighting mechanism 1331 according to specific needs, thereby changing the lighting angle of the lighting mechanism 1331. The second adjusting platform 1332a may be set to a multi-axis motion adjusting platform, and may adjust the position of the vision mechanism 1332 in the up-down direction, the front-back direction and the left-right direction of the silicon wafer chamfering machine measuring table 100, and may also adjust the pitch angle of the vision mechanism 1332.
In the present embodiment, the vision mechanism 1332 further includes a driving portion 1332b, and the driving portion 1332b controls and adjusts the position and angle of the second adjustment platform 1332 a. Specifically, the driving part 1332b may be provided as a stepping motor. When the measured diameter of the silicon wafer changes, the driving part 1332b can control the second adjusting platform 1332a to automatically adjust the position of the vision mechanism 1332 in the front-rear direction and the pitching angle of the vision mechanism 1332 according to the imaging position, so that the imaging of the vision mechanism 1332 is clearer. Through the above arrangement, the visual mechanism 1332 is automatically adjusted by the driving portion 1332b, so that the accuracy of adjustment of the visual mechanism 1332 can be improved, and the detection accuracy of the peripheral contour detecting device 133 can be further improved.
As shown in fig. 5, as an implementation, the groove detection device 134 is fixedly connected to the equipment rack 11, wherein the groove detection device 134 may be configured as a "V" groove detection device. Specifically, the groove detection device 134 includes a first vision mechanism 1341, a second vision mechanism 1342, a first illumination mechanism 1343, and a second illumination mechanism 1344, the first vision mechanism 1341 is disposed on the upper side of the second vision mechanism 1342, the measurement platform 12 is at least partially disposed between the first vision mechanism 1341 and the second vision mechanism 1342, the first illumination mechanism 1343 is at least partially disposed on the upper side of the measurement platform 12, the second illumination mechanism 1344 is at least partially disposed on the left side or the right side of the measurement platform 12, and the second illumination mechanism 1344 is consistent with the measurement platform 12 in height. Through the arrangement, the first illumination mechanism 1343 can provide an illumination effect for the upper surface of the silicon wafer, so that the imaging quality of the first vision mechanism 1341 is improved, the second illumination mechanism 1344 can provide a lateral illumination effect for the silicon wafer, so that the details of the grooves on the upper surface and the lower surface of the silicon wafer are clear, the first vision mechanism 1341 and the second vision mechanism 1342 can obtain more accurate groove data, and the detection precision of the groove detection device 134 is improved.
As an implementation manner, the measurement platform 12 includes a rotation mechanism 121 and a turntable mechanism 122 for placing silicon wafers, the rotation mechanism 121 is disposed on the equipment rack 11, the rotation mechanism 121 is fixedly connected with the equipment rack 11, and the rotation mechanism 121 is rotatably connected with the turntable mechanism 122. Through the arrangement, the turntable mechanism 122 can rotate under the control of the rotating mechanism 121, so that the silicon wafer chamfering machine measuring table 100 can conveniently detect different angles of the silicon wafer, and the qualification rate of the silicon wafer is improved. In addition, the measurement platform 12 can enable the silicon wafer to rotate, and the detection assembly 13 is further beneficial to being arranged around the measurement platform 12, so that the silicon wafer can be conveniently detected in each data, the structure of the silicon wafer chamfering machine measurement platform 100 can be compact, and the detection cost of the silicon wafer chamfering machine measurement platform 100 can be reduced.
The silicon wafer chamfering machine measuring table 100 provided by the utility model can detect each item of data of the silicon wafer in real time without transferring the silicon wafer by integrating the detecting component 13, thereby not only reducing the detecting cost of silicon wafer processing, but also improving the detecting precision of the silicon wafer. In addition, the detection assembly 13 is arranged around the measuring platform, so that the structural compactness of the silicon wafer chamfering machine measuring platform 100 can be improved, and the space occupation rate of the silicon wafer chamfering machine measuring platform 100 can be reduced.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
Claims (10)
1. A silicon wafer chamfering machine measuring table, comprising:
an equipment rack;
the measuring platform is at least partially arranged on the equipment rack and is used for bearing the silicon wafer;
the detection assembly is at least partially arranged on the equipment rack;
the detection assembly comprises a thickness measuring device, a peripheral contour detecting device and a groove detecting device, wherein the thickness measuring device, the peripheral contour detecting device and the groove detecting device are arranged around the measuring platform.
2. The silicon wafer chamfering machine measurement table of claim 1 wherein said thickness measuring means is at least partially disposed on a rear side of said measurement platform, said peripheral measuring means is at least partially disposed on a left or right side of said measurement platform, said peripheral contour detecting means is at least partially disposed on a rear side of said measurement platform, and said groove detecting means is at least partially disposed on a left or right side of said measurement platform.
3. The silicon wafer chamfering machine measurement table according to claim 2, wherein the thickness measuring device is fixedly connected with the equipment rack, the thickness measuring device includes a first laser measuring mechanism and a second laser measuring mechanism, the first laser measuring mechanism is disposed on an upper side of the second laser measuring mechanism, and the measurement platform is at least partially disposed between the first laser measuring mechanism and the second laser measuring mechanism.
4. The silicon wafer chamfering machine measurement table according to claim 2, wherein the peripheral measurement device is fixedly connected with the equipment rack, the peripheral measurement device includes a transmitting end and a receiving end, the transmitting end is disposed on an upper side or a lower side of the receiving end, and the measurement platform is at least partially disposed between the transmitting end and the receiving end.
5. The silicon wafer chamfering machine measuring table according to claim 2, wherein the peripheral contour detecting device is fixedly connected with the equipment rack, the peripheral contour detecting device comprises an illumination mechanism and a vision mechanism, the illumination mechanism and the vision mechanism are at least partially arranged on two sides of the measuring platform, and the illumination mechanism and the vision mechanism are consistent with the height of the measuring platform.
6. The silicon wafer bevel machine measurement bench of claim 5 wherein the illumination mechanism comprises a first adjustment platform for adjusting an illumination angle of the illumination mechanism, the first adjustment platform being at least partially disposed on the equipment rack, the vision mechanism comprising a second adjustment platform for adjusting a position and an imaging angle of the vision mechanism, the second adjustment platform being at least partially disposed on the equipment rack.
7. The wafer bevel machine measurement bench of claim 6 wherein said illumination mechanism has a rotational degree of freedom and said vision mechanism has a plurality of directions of freedom of movement and rotational degrees of freedom.
8. The silicon wafer chamfering machine measurement table according to claim 6, wherein the vision mechanism further comprises a driving portion that controls and adjusts the position and angle of the second adjustment stage.
9. The silicon wafer chamfering machine measurement table according to claim 2, wherein the groove detection device is fixedly connected with the equipment rack, the groove detection device comprises a first vision mechanism, a second vision mechanism, a first illumination mechanism and a second illumination mechanism, the first vision mechanism is arranged on the upper side of the second vision mechanism, the measurement platform is at least partially arranged between the first vision mechanism and the second vision mechanism, the first illumination mechanism is at least partially arranged on the upper side of the measurement platform, the second illumination mechanism is at least partially arranged on the left side or the right side of the measurement platform, and the second illumination mechanism is consistent with the measurement platform in height.
10. The silicon wafer chamfering machine measurement table according to claim 1, wherein the measurement platform includes a rotating mechanism and a turntable mechanism for placing the silicon wafer, the rotating mechanism is provided on the equipment rack, and the rotating mechanism is rotatably connected with the turntable mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321495995.4U CN219890371U (en) | 2023-06-12 | 2023-06-12 | Measuring table of silicon wafer chamfering machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321495995.4U CN219890371U (en) | 2023-06-12 | 2023-06-12 | Measuring table of silicon wafer chamfering machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219890371U true CN219890371U (en) | 2023-10-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321495995.4U Active CN219890371U (en) | 2023-06-12 | 2023-06-12 | Measuring table of silicon wafer chamfering machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219890371U (en) |
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2023
- 2023-06-12 CN CN202321495995.4U patent/CN219890371U/en active Active
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