CN219637400U

CN219637400U - Crystal pulling device

Info

Publication number: CN219637400U
Application number: CN202321392288.2U
Authority: CN
Inventors: 冯睿超; 赵言; 金光勳
Original assignee: Zing Semiconductor Corp
Current assignee: Zing Semiconductor Corp
Priority date: 2023-06-02
Filing date: 2023-06-02
Publication date: 2023-09-05
Anticipated expiration: 2033-06-02

Abstract

The embodiment of the specification provides a crystal pulling device, which comprises a crucible, a heater, a heat insulation layer and a growth chamber, wherein the heat insulation layer is arranged in the growth chamber, the heat insulation layer surrounds the heater, the heater is arranged between the heat insulation layer and the crucible, the device further comprises a plurality of magnetic field detectors, and a plurality of placing grooves for installing the magnetic field detectors are formed in the periphery of the heat insulation layer. Through seting up a plurality of standing grooves in the periphery of insulating layer, through placing the magnetic field detector in a plurality of standing grooves, the insulating layer can isolate most heat, avoids the magnetic field detector to receive the damage, can direct measurement magnetic field strength through the magnetic field detector, the output magnetic field of control superconducting magnetic field that can be more accurate to realize more stable single crystal growth environment.

Description

Crystal pulling device

Technical Field

The specification relates to the technical field of semiconductor manufacturing, and in particular relates to a crystal pulling device.

Background

In the manufacture of semiconductors, it is necessary to use a crystal pulling apparatus to pull a material. Chinese patent net application No. 201910863523.1 provides a crystal pulling apparatus, device and method, the crystal pulling apparatus comprising: the crucible comprises an accommodating space for accommodating the silicon melt; a magnetic field emission part for outputting a magnetic field to the crucible; a temperature measuring section for measuring a temperature value of the silicon melt at one or more specified positions; and the control part is respectively connected with the magnetic field emission part and the temperature measurement part, and is used for receiving the temperature values of the silicon melt at one or more specified positions sent by the temperature measurement part, determining the target magnetic field intensity of the magnetic field output by the magnetic field emission part according to the temperature values of the silicon melt at one or more specified positions and controlling the magnetic field output by the magnetic field emission part to be the magnetic field with the target magnetic field intensity.

The mode of determining the magnetic field strength is indirectly measured by judging the temperature value of the silicon solution, and the accuracy of the measured value of the magnetic field strength is low.

Disclosure of Invention

In view of this, the embodiments of the present disclosure provide a crystal pulling apparatus that can directly measure the magnetic field strength by installing a magnetic field detector, and can more precisely control the output magnetic field of a superconducting magnetic field, thereby realizing a more stable single crystal growth environment.

The embodiment of the specification provides the following technical scheme: the utility model provides a crystal pulling device, includes crucible, heater, insulating layer and growth chamber, the insulating layer is arranged in the growth chamber, the insulating layer encircles the heater sets up, the heater set up in the insulating layer with between the crucible, the device still includes a plurality of magnetic field detector, the insulating layer periphery has been seted up and is used for installing a plurality of standing grooves of magnetic field detector.

Preferably, a plurality of magnetic field detectors are arranged in each placing groove, and the magnetic field detectors are sequentially installed in three axial directions.

Preferably, the adjacent magnetic field detectors are sequentially arranged in the placing groove at intervals of 100 mm.

Preferably, the placing grooves are provided with four groups, and the four groups of placing grooves are uniformly distributed on the periphery of the heat insulation layer.

Preferably, the device further comprises a plurality of cooling mechanisms, and a plurality of the cooling mechanisms are arranged in the placing groove so as to reduce the temperature around the magnetic field detector.

Preferably, the cooling mechanism comprises a water cooling pipeline, and the water cooling pipeline is arranged beside the magnetic field detector.

Preferably, two groups of water cooling pipelines are arranged in each placing groove.

Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least:

through seting up a plurality of standing grooves in the periphery of insulating layer, through placing the magnetic field detector in a plurality of standing grooves, the insulating layer can isolate most heat, avoids the magnetic field detector to receive the damage, can direct measurement magnetic field strength through the magnetic field detector, the output magnetic field of control superconducting magnetic field that can be more accurate to realize more stable single crystal growth environment.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of the overall structure of a crystal pulling apparatus provided by the present utility model;

FIG. 2 is a schematic view of the insulation layer of the crystal puller of the present utility model;

FIG. 3 is a top view of the magnetic field detector and water cooling pipe distribution of the crystal pulling apparatus of the present utility model;

FIG. 4 is a front view of the magnetic field detector and water cooling piping of the crystal puller of the present utility model.

1. A growth chamber; 2. a seed crystal rope; 3. a single crystal silicon rod; 4. a polysilicon melting soup; 5. a crucible; 6. a support shaft; 7. a heater; 8. a thermal insulation layer; 9. a superconducting magnetic field; 10. a magnetic field detector; 11. a water-cooled pipeline; 12. a waterproof interlayer.

Detailed Description

Embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.

Other advantages and effects of the present utility model will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present utility model with reference to specific examples. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. The utility model may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present utility model. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present disclosure, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.

It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present utility model by way of illustration, and only the components related to the present utility model are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.

In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.

The following describes the technical scheme provided by each embodiment of the present utility model with reference to the accompanying drawings.

As shown in fig. 1-4, a crystal pulling device comprises a crucible 5, a heater 7, a heat insulation layer 8 and a growth chamber 1, wherein the heat insulation layer 8 is arranged in the growth chamber 1, the heat insulation layer 8 surrounds the heater 7, the heater 7 is arranged between the heat insulation layer 8 and the crucible 5, the heater 7 heats the crucible 5, the heat insulation layer 8 can play a role in isolating heat, the device further comprises a plurality of magnetic field detectors 10, and a plurality of placing grooves for installing a plurality of the magnetic field detectors 10 are formed in the periphery of the heat insulation layer 8.

Through seting up a plurality of standing grooves in the periphery of insulating layer 8, through placing magnetic field detector 10 in a plurality of standing grooves, insulating layer 8 can isolate most heat for the temperature in the standing groove can not be very high, can install magnetic field detector 10, avoids magnetic field detector 10 to receive the damage, can directly measure magnetic field strength through magnetic field detector 10, the output magnetic field of control superconducting magnetic field 9 that can be more accurate, thereby realize more stable single crystal growth environment.

It should be noted that, a part of space is reserved between the growth chamber 1 and the heat insulation layer 8 for placing the magnetic field detector 10, and the heat insulation layer 8 can insulate most of heat, so that the temperature in this area is not very high, and thus it is feasible to install the magnetic field detector 10.

It should be further noted that a support shaft 6 is provided at the bottom of the crucible 5 to support the crucible 5, the polysilicon molten soup 4 is filled in the crucible 5, a single crystal silicon rod 3 is provided above the crucible 5, the top of the single crystal silicon rod 3 is connected with a seed crystal rope, the seed crystal rope penetrates out of the top of the growth chamber 1, and the single crystal silicon rod 3 is driven to move upwards by the seed crystal rope to pull the polysilicon molten soup 4 in the crucible 5.

As shown in fig. 2 to fig. 4, in some embodiments, a plurality of magnetic field detectors 10 are disposed in each of the placement grooves, the plurality of magnetic field detectors 10 are sequentially installed in three axial directions for detecting the magnetic field distribution and the magnetic field intensity of the position, and the magnetic field detectors 10 are sequentially installed in three axial directions of X, Y, and Z, wherein the X direction and the Y direction are two opposite directions, and the Z direction is a direction perpendicular to the X direction and the Y direction.

In the present embodiment, the X direction is the horizontal direction in which the heat insulating layer 8 approaches the growth chamber 1, the Y direction is the horizontal direction in which the growth chamber 1 approaches the heat insulating layer 8, and the Z direction is the vertically upward direction.

In some embodiments, the adjacent magnetic field detectors 10 are sequentially arranged in the placement groove at intervals of 100mm, and the measurement accuracy of the magnetic field detectors 10 can be ensured by arranging the adjacent magnetic field detectors 10 at intervals of 100 mm.

As shown in fig. 2, in some embodiments, the placement grooves are provided with four groups, the four groups of placement grooves are uniformly distributed on the periphery of the heat insulation layer 8, and the four groups of placement grooves which are uniformly distributed on the periphery of the heat insulation layer 8 and are used for installing the magnetic field detector 10 can comprehensively detect the magnetic field distribution and the magnetic field intensity, so that the measurement accuracy is ensured.

The outer periphery of the insulating layer 8 is selected to be a front position recorded as 0 degree, a placing groove for installing the magnetic field detector 10 is formed in the front position, and placing grooves for installing the magnetic field detector 10 are formed in 4 positions (0 degree, 90 degrees, 180 degrees and 270 degrees) of the outer periphery of the insulating layer 8, so that the magnetic field distribution and the magnetic field intensity are comprehensively detected.

In other embodiments, the number of the placement grooves may be three at least, so that the placement grooves are uniformly distributed on the outer periphery of the heat insulating layer 8.

As shown in fig. 3-4, in some embodiments, the apparatus further includes a plurality of cooling mechanisms, and a plurality of cooling mechanisms are installed in the placement groove to reduce the temperature around the magnetic field detector 10, and by setting the cooling mechanisms in the placement groove, the cooling mechanisms can cool the placement groove, so that the temperature in the placement groove is prevented from being too high, and the magnetic field detector 10 can be further protected.

Further, the cooling mechanism comprises a water cooling pipeline 11, the water cooling pipeline 11 is arranged beside the magnetic field detector 10, the temperature in the placing groove is reduced through the water cooling pipeline 11, the temperature is reduced in a water cooling mode, heat is transferred through water flow, the heat can be more uniformly dispersed, and the cooling effect is good.

The waterproof interlayer 12 is disposed between the water-cooled pipeline 11 and the magnetic field detector 10, so as to protect the magnetic field detector 10.

Furthermore, two sets of water-cooling pipelines 11 are arranged in each placing groove, and two sets of water-cooling pipelines 11 are symmetrically distributed about the magnetic field detector 10 through arranging two sets of water-cooling pipelines 11 in each placing groove, so that the cooling effect on the periphery of the magnetic field detector 10 is guaranteed.

The water-cooling pipe 11 may be fixed to the inner wall of the growth chamber 1 by a fixing mechanism, and the fixing mechanism may be a pipe hoop or the like.

The same and similar parts of the embodiments in this specification are all mutually referred to, and each embodiment focuses on the differences from the other embodiments. In particular, for the method embodiments described later, since they correspond to the system, the description is relatively simple, and reference should be made to the description of some of the system embodiments.

The foregoing is merely illustrative of the present utility model, and the present utility model is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present utility model should be included in the present utility model. Therefore, the protection scope of the utility model is subject to the protection scope of the claims.

Claims

1. The utility model provides a crystal pulling device, includes crucible, heater, insulating layer and growth room, its characterized in that, the insulating layer is arranged in the growth room, the insulating layer encircles the heater sets up, the heater set up in the insulating layer with between the crucible, the device still includes a plurality of magnetic field detector, the insulating layer periphery has seted up a plurality of standing grooves that are used for installing a plurality of magnetic field detector.

2. The crystal pulling apparatus of claim 1, wherein a plurality of magnetic field detectors are disposed in each of the holding tanks, the plurality of magnetic field detectors being mounted in sequence in three axial directions.

3. A crystal pulling apparatus as defined in claim 2, wherein adjacent ones of said magnetic field detectors are mounted in the holding tank at successive intervals of 100 mm.

4. A crystal pulling apparatus as defined in any one of claims 1 to 3, wherein the placement slots are provided in four groups, the four groups of placement slots being evenly distributed around the periphery of the insulating layer.

5. A crystal pulling apparatus as defined in claim 1, further comprising a plurality of cooling mechanisms mounted within the holding tank to reduce the temperature around the magnetic field detector.

6. A crystal pulling apparatus as defined in claim 5, wherein the cooling mechanism comprises a water cooled conduit disposed beside the magnetic field detector.

7. A crystal pulling apparatus as defined in claim 6, wherein two sets of water cooled tubes are disposed in each of the holding tanks.