CN219470271U

CN219470271U - Continuous feeding device for producing monocrystalline silicon by Czochralski method

Info

Publication number: CN219470271U
Application number: CN202320386374.6U
Authority: CN
Inventors: 王中弟
Original assignee: Ningxia Xuying New Energy Technology Co ltd
Current assignee: Ningxia Xuying New Energy Technology Co ltd
Priority date: 2023-03-03
Filing date: 2023-03-03
Publication date: 2023-08-04
Anticipated expiration: 2033-03-03

Abstract

The utility model discloses a continuous feeding device for producing monocrystalline silicon by a Czochralski method, which comprises a feeding component and a lifting component, wherein the lifting component is arranged on a monocrystalline furnace, the feeding component is arranged on the lifting component, the lower end of a corrugated pipe is connected with a feed inlet of a furnace cover of the monocrystalline furnace in a sealing way, the quartz pipe is inserted into the corrugated pipe, the upper end of the corrugated pipe is connected with the upper end of the quartz pipe in a sealing way by a first flange, the lower end of the quartz pipe penetrates through the corrugated pipe and the interior of the monocrystalline furnace to be communicated, a closed silicon material feeding channel is formed by a closed bin, the corrugated pipe and the quartz pipe, the corrugated pipe and the lifting component drive the corrugated pipe to extend or shrink in the up-down movement process of the first flange, the first flange pushes the quartz pipe to gradually insert into the monocrystalline furnace to enable the lower end of the quartz pipe to gradually approach the molten silicon liquid level in a quartz crucible to finish a state ready for feeding silicon material, and the first flange pulls the quartz pipe gradually away from the quartz crucible to enable the lower end of the quartz pipe to withdraw from the monocrystalline furnace to be ready for pulling the crystal again.

Description

Continuous feeding device for producing monocrystalline silicon by Czochralski method

Technical Field

The utility model relates to the technical field of single crystal preparation, in particular to a continuous feeding device for producing single crystal silicon by a Czochralski method.

Background

The silicon single crystal furnace is operated by adopting a decompression crystal pulling process at present, high-purity argon is continuously introduced into a single crystal furnace chamber at a constant speed in the process of pulling the silicon single crystal, and a mechanical pump continuously pumps air outwards from the furnace chamber, so that the pressure in the furnace chamber is kept at about 1333Pa, and the process has the characteristics of a vacuum process (negative pressure is kept in the furnace chamber) and a flowing atmosphere process (continuous inflation and continuous exhaust). Because the temperature in the single crystal furnace is up to 1420 ℃, and the crystal must be pulled down under the protection of argon, only one single crystal rod can be pulled every time the polysilicon material of one crucible is melted. Every time a single crystal rod is pulled, the temperature is reduced, the furnace is stopped once, the furnace is disassembled once, a thermal field and a filtering system are cleaned, and the like, so that the production equipment not only wastes manpower and energy, but also seriously affects the production efficiency, and the manufacturing cost is high, thereby being unfavorable for the development of the single crystal silicon production.

The continuous feeding device of the silicon single crystal furnace is made of stainless steel, the lower bottom of a charging barrel is composed of three stainless steel blades, the blades are connected with the edge of the wall of the charging barrel through hinges, and the center points of the three blades are connected through a vertical rod to keep the bottom surface in a closed state. When the vertical rod is loosened, the three blades are opened downwards, and the silicon material falls down from the three blades. The following potential safety hazards exist: firstly, a hinge for fixing three-leaf blades at high temperature is easy to deform, so that the three-leaf blades are not fully opened, and the silicon material cannot fall completely; secondly, silicon materials are often blocked in the charging barrel due to stacking factors, and the charging barrel cannot be dropped down by using a gate valve to knock the charging barrel, so that an upright rod sometimes falls into a crucible to cause serious defects; thirdly, in order to achieve a certain safety distance between the lowest point of the three blades and the liquid level of the molten silicon, the height of the charging barrel must be raised, so that the silicon material leaves the liquid level of the molten silicon to be too high, and the molten silicon often splashes out of the liquid level during continuous feeding, thereby causing loss of the silicon material and damage to the graphite piece; fourthly, sometimes the hinge deformation can lead to the disconnection of the three blades and the wall of the material cylinder, and the three blades fall into the molten silicon to lead to the scrapping of the silicon material of a crucible.

Disclosure of Invention

In view of the foregoing, it is necessary to provide a continuous feeding device for producing monocrystalline silicon by the czochralski method, so as to solve the problems that in the prior art, the silicon material falls off smoothly in the process of adding the silicon material for the second time, the clamping material cannot be fed, and even the metal hinge falls into the crucible to cause the silicon material to be scrapped.

The continuous feeding device for producing the monocrystalline silicon by the Czochralski method comprises a feeding component and a lifting component, wherein the feeding component is arranged on the lifting component, the feeding component is in sealing connection with a furnace cover of a monocrystalline furnace to form a closed space with the monocrystalline furnace, the lifting component is operated to drive the feeding component to descend so that the lower end of the feeding component penetrates through the furnace cover of the monocrystalline furnace and stretches into a quartz crucible to prepare for feeding, and the lifting component is operated to drive the feeding component to ascend so that the lower end of the feeding component is far away from the quartz crucible to prepare for pulling; the feeding component comprises a corrugated pipe and a quartz pipe, the corrugated pipe is welded, a sealing ring is arranged at the lower end of the corrugated pipe for being in sealing connection with a feed inlet of a furnace cover of the single crystal furnace, the quartz pipe is inserted into the corrugated pipe and is in sealing connection with the upper end of the corrugated pipe and the upper end of the quartz pipe by a first flange, a closed bin is arranged at the upper end of the corrugated pipe, a silicon material inlet is formed in one side of the closed bin, a gate valve is arranged at the silicon material inlet, an opening at the upper end of the quartz pipe is close to the silicon material inlet and is located right below the silicon material inlet, the lower end of the quartz pipe is communicated with the inside of the single crystal furnace through the corrugated pipe, the closed bin and the quartz pipe form a silicon material adding channel, the lifting component is fixedly connected with the first flange, the lifting component works to enable the first flange to move up and down, the first flange is gradually contracted in the process of downwards moving the corrugated pipe, the first flange is gradually pushed into the single crystal furnace to enable the lower end of the quartz pipe to gradually approach the molten silicon liquid level in the quartz crucible to complete the preparation of adding silicon material, and the lifting component drives the first flange to gradually extend in the upward moving process, and the first flange gradually pulls the quartz pipe gradually away from the lower end of the single crystal furnace to be convenient for withdrawing procedure from the lower end of the single crystal furnace.

Preferably, the lifting assembly comprises a supporting frame, a motor and a screw rod, wherein the lower end of the supporting frame is arranged at the charging hole of the single crystal furnace, the motor is arranged at the upper end of the supporting frame, the output end of the motor is fixedly connected with the upper end of the screw rod, the lower end rotating roller of the screw rod is connected to the supporting frame, the sliding member is arranged on the supporting frame, a threaded hole is formed in the sliding member, the threaded hole of the sliding member and the external threads of the screw rod are matched with each other, two sides of the first flange are respectively provided with a connecting piece, each connecting piece is mutually fixed with the sliding member, the screw rod drives the sliding member to move upwards or downwards relative to the supporting frame in the rotating process driven by the motor, and the sliding member drives the first flange to move along the sliding member together in the moving process, so that the first flange drives the closed bin and the quartz tube to move up and down along the supporting frame.

Preferably, the support frame includes bottom plate, roof, four support columns and a guide, and the lower extreme of every support column all is connected with the bottom plate, and the upper end and the roof of every support column are connected, and the upper and lower both ends of guide are connected with bottom plate and roof respectively, and the guide is located between four support columns, and the both sides of slider respectively set up a guide grip block, and every guide grip block is installed on the left and right sides border of guide and can slide from top to bottom along the guide, and one side of guide sets up bellows and seals the storehouse, and the opposite side of guide sets up screw rod and slider.

Preferably, the quartz tube comprises a receiving part and a guiding part, the receiving part is of an open structure, the lower end of the receiving part and the upper end of the guiding part are integrally formed, a flange is arranged at the joint of the receiving part and the guiding part, the flange is arranged on the first flange after the guiding part passes through the first flange, the receiving part is placed in the closed bin, the upper end opening of the receiving part is close to the silicon material inlet of the closed bin and is positioned below the silicon material inlet, and the lower end discharging opening of the guiding part is arranged in an inclined shape.

Preferably, the receiving portion is embodied as a hollow conical structure.

Preferably, the lower end of the corrugated pipe is provided with a second flange, the lower end face of the corrugated pipe is in sealing connection with the upper end face of the second flange, the lower end face of the second flange is in sealing connection with the upper end face of the bottom plate of the support frame, and the lower end face of the bottom plate of the support frame is in sealing connection with the flange on the furnace cover of the single crystal furnace.

In the continuous feeding device for producing the monocrystalline silicon by the Czochralski method, the lifting assembly is arranged on the monocrystalline furnace, the feeding assembly is arranged on the lifting assembly, the lower end of the corrugated pipe is in sealing connection with the feed inlet of the furnace cover of the monocrystalline furnace, the quartz pipe is inserted into the corrugated pipe and is in sealing connection with the upper end of the quartz pipe by the first flange, the lower end of the quartz pipe penetrates through the corrugated pipe and the interior of the monocrystalline furnace, the closed bin, the corrugated pipe and the quartz pipe form a closed silicon material feeding channel, the corrugated pipe extends or contracts in the process of driving the first flange to move up and down, the first flange pushes the quartz pipe to gradually insert towards the monocrystalline furnace, so that the lower end of the quartz pipe gradually approaches to the molten silicon liquid level in the quartz crucible to finish a state ready for adding silicon materials, and as the silicon materials continuously enter the closed bin from the inside the closed bin, the silicon materials continuously enter the quartz pipe and gradually fall into the quartz crucible by the inclined quartz pipe, the situation that the clamping materials and the materials cannot be fed in the process caused by storing silicon material piles in advance in the prior art is solved, the front end of the quartz pipe does not have any metal pull flange, the problem that the silicon crystal is completely pulled from the bottom metal bottom part of the quartz pipe is completely removed from the quartz crucible after the quartz pipe is gradually pulled, and the problem that the silicon is completely removed from the quartz bottom part is convenient to be solved.

Drawings

FIG. 1 is a perspective view of a continuous feeding apparatus for producing silicon single crystal by Czochralski method.

FIG. 2 is a top view of a continuous feed apparatus for producing silicon single crystal by the Czochralski method.

Fig. 3 is a cross-sectional view at A-A in fig. 2.

Fig. 4 is a left side view of fig. 1.

FIG. 5 is a view showing a state in which a continuous charging apparatus for producing single crystal silicon by the Czochralski method is in charging.

FIG. 6 is a view showing a continuous feeding apparatus for producing single crystal silicon by the Czochralski method in an unfeeded state.

In the figure: the feeding assembly 10, the lifting assembly 20, the corrugated pipe 11, the quartz tube 12, the first flange 13, the closed bin 14, the silicon inlet 141, the gate valve 142, the supporting frame 21, the motor 22, the screw 23, the sliding piece 24, the threaded hole 241, the connecting piece 131, the bottom plate 211, the top plate 212, the supporting column 213, the guiding piece 214, the receiving part 121, the guiding part 122, the second flange 15 and the single crystal furnace 200.

Detailed Description

The technical scheme and technical effects of the embodiments of the present utility model are further described in detail below with reference to the accompanying drawings.

Referring to fig. 1 to 4, the continuous feeding device for producing silicon single crystal by the czochralski method comprises a feeding component 10 and a lifting component 20, wherein the lifting component 20 is used for being installed on a furnace cover of a single crystal furnace, the feeding component 10 is installed on the lifting component 20, the feeding component 10 is in sealing connection with a furnace cover of the single crystal furnace to enable the feeding component 10 and the single crystal furnace to form a closed space, the lifting component 20 works to drive the feeding component 10 to descend so that the lower end of the feeding component 10 penetrates through the furnace cover of the single crystal furnace and stretches into a quartz crucible to prepare for feeding, and after the silicon material is fed, the lifting component 20 works to drive the feeding component 10 to ascend so that the lower end of the feeding component 10 is far away from the quartz crucible to prepare for pulling; the feeding component 10 comprises a corrugated pipe 11 and a quartz pipe 12, the corrugated pipe 11 is a welded corrugated pipe, the lower end of the corrugated pipe 11 is provided with a sealing ring for being in sealing connection with a feed inlet of a furnace cover of the single crystal furnace, the quartz pipe 12 is inserted into the corrugated pipe 11 and is in sealing connection with the upper end of the corrugated pipe 11 and the upper end of the quartz pipe 12 by a first flange 13, the corrugated pipe 11 and the quartz pipe 12 are arranged on the single crystal furnace and are in an inclined state, the upper end of the corrugated pipe 11 is provided with a closed bin 14, one side of the closed bin 14 is provided with a silicon material inlet 141, the silicon material inlet 141 is provided with a gate valve 142, the upper end opening of the quartz pipe 12 is close to the silicon material inlet 141 and is positioned under the silicon material inlet 141, the lower end of the quartz pipe 12 passes through the corrugated pipe 11 and the inner part of the single crystal furnace to be communicated, the closed bin 14, the corrugated pipe 11 and the quartz pipe 12 form a semi-closed silicon material feeding channel, the lower end of the corrugated pipe 11 is arranged on the furnace cover of the single crystal furnace to enable the semi-closed silicon material adding channel to be communicated with the interior of the single crystal furnace, the lifting component 20 is fixedly connected with the first flange 13, the lifting component 20 can enable the first flange 13 to move up and down, the first flange 13 gradually contracts the corrugated pipe 11 in the downward moving process, simultaneously the first flange 13 pushes the quartz pipe 12 to gradually insert into the single crystal furnace so that the lower end of the quartz pipe 12 gradually approaches the molten silicon liquid level in the quartz crucible to finish the state of preparing to add silicon material, the silicon material can be added again under the condition that the silicon material in the single crystal furnace is melted after being connected with an external material conveying device in a sealing way, after the gate valve 142 is opened, the silicon material can be continuously added into the sealing bin 14 from the gate valve 142, the silicon material continuously entering the sealing bin 14 falls into the quartz pipe 12 and gradually falls into the quartz crucible along the inclined quartz pipe 12, the problem of among the prior art card material and the unable unloading of charging process because of storing the silicon material accumulation in advance to the front end of quartz capsule does not have any metal, makes the metal part drop after the quartz capsule bottom is heated and leads to the silicon material to scrap is thoroughly solved. After the silicon material is added, the lifting assembly 20 drives the first flange 13 to gradually extend the corrugated pipe 11 in the upward moving process, and meanwhile, the first flange 13 pulls the quartz tube 12 gradually away from the quartz crucible so that the lower end of the quartz tube 12 is withdrawn from the single crystal furnace, so that the single crystal furnace is ready for a re-pulling process.

Further, the lifting assembly 20 comprises a supporting frame 21, a motor 22 and a screw 23, the lower end of the supporting frame 21 is arranged at the charging hole of the single crystal furnace, the motor 22 is arranged at the upper end of the supporting frame 21, the output end of the motor 22 is fixedly connected with the upper end of the screw 23, the lower end rotating roller of the screw 23 is connected to the supporting frame 21, the supporting frame 21 is provided with a sliding piece 24, the sliding piece 24 is provided with a threaded hole 241, the threaded hole 241 of the sliding piece 24 is matched with the external threads of the screw 23, two sides of the first flange 13 are respectively provided with a connecting piece 131, each connecting piece 131 is mutually fixed with the sliding piece 24, the screw 23 drives the sliding piece 24 to move upwards or downwards relative to the supporting frame 21 in the rotating process of the motor 22, and the sliding piece 24 drives the first flange 13 to move along with the sliding piece 24 in the upwards or downwards moving process of the supporting frame 21, and the first flange 13 drives the closed bin 14 and the quartz tube 12 to move up and down along the supporting frame 21 in the moving process.

Further, the supporting frame 21 comprises a bottom plate 211, a top plate 212, four supporting columns 213 and a guide piece 214, the bottom plate 211 is fixed on a flange at a feed port of a furnace cover of the single crystal furnace, the structure of the feed port is similar to that of an observation window arranged on the furnace cover, the arrangement position of the feed port is similar to that of the observation window arranged on the furnace cover, one of two observation windows arranged on the furnace cover can be used for installing the bottom plate 211, the lower end of each supporting column 213 is connected with the bottom plate 211, the upper end of each supporting column 213 is connected with the top plate 212, the upper end and the lower end of the guide piece 214 are respectively connected with the bottom plate 211 and the top plate 212, the guide piece 214 is positioned between the four supporting columns 213, two sides of the slide piece 24 are respectively provided with a guide clamping block 241, each guide clamping block 241 is arranged on the edges of the left side and the right side of the guide piece 214 and can slide up and down along the guide piece 214, one side of the guide piece 214 is provided with the corrugated tube 11 and the closed cabin 14, and the other side of the guide piece 214 is provided with the screw 23 and the slide piece 24. The guide clamping blocks 241 at both sides of the slider 24 clamp both sides of the guide 214, and the slider 24 is driven by the screw 23 and the slider 24 slides up and down along the support frame 21 under the guide action of the guide 214.

Further, the guide 214 is a plate, and in other embodiments, the guide 214 may be cylindrical.

Further, the quartz tube 12 includes a receiving portion 121 and a guiding portion 122, the receiving portion 121 is of an open structure, the lower end of the receiving portion 121 and the upper end of the guiding portion 122 are integrally formed, a flange 123 is arranged at the joint of the receiving portion 121 and the guiding portion 122, the guiding portion 122 passes through the first flange 13 and then installs the flange 123 on the first flange 13, the receiving portion 121 is placed in the closed bin 14, the upper end opening of the receiving portion 121 is close to the silicon material inlet 141 of the closed bin 14 and is located below the silicon material inlet 141, and the lower end discharge opening of the guiding portion 122 is arranged in an inclined shape. After the continuous feeding device for producing the monocrystalline silicon by the Czochralski method is arranged on the monocrystalline furnace, the whole continuous feeding device for producing the monocrystalline silicon by the Czochralski method is in an inclined state, the plane of a lower end discharge opening of the inclined guide part 122 and the liquid level of molten silicon in the quartz crucible are parallel or nearly parallel, the inclined discharge opening can be close to the liquid level of the molten silicon in the process of descending the quartz tube 12 according to a preset inclined angle, the lower end discharge opening of the quartz tube 12 is close to the liquid level of the molten silicon by the operation of the lifting assembly 20, and the silicon slides into the quartz crucible along the inclined guide part 122.

Further, the material receiving portion 121 is specifically of a hollow conical structure, the diameter of the upper end opening of the material receiving portion 121 is larger than that of the lower end opening of the material receiving portion, and the upper end opening of the material receiving portion 121 is close to the gate valve 142 so that the silicon material can fall into the material receiving portion 121 completely. The silicon material entering from the gate valve 142 can directly fall into the receiving portion 121, preventing the silicon material from being contaminated by direct contact with the closing chamber 14.

Further, the lower end of the corrugated pipe 11 is provided with a second flange 15, the lower end face of the corrugated pipe 11 is in sealing connection with the upper end face of the second flange 15, the lower end face of the second flange 15 is in sealing connection with the upper end face of the bottom plate 211 of the support frame, and the lower end face of the bottom plate 211 of the support frame is in sealing connection with the flange on the furnace cover of the single crystal furnace.

Further, the continuous feeding device for producing monocrystalline silicon by the Czochralski method is arranged on a 95 monocrystalline furnace, a 1050 monocrystalline furnace, a 1600 monocrystalline furnace or other types of monocrystalline furnaces.

When in use, referring to fig. 5 and 6, the lifting assembly 20 is used for being mounted on a furnace cover of the single crystal furnace 200, the feeding assembly 10 is mounted on the lifting assembly 20, the feeding assembly 10 is in sealing connection with a furnace cover of the single crystal furnace 200 to enable the feeding assembly 10 and the single crystal furnace to form a closed space, the lifting assembly 20 works to drive the feeding assembly 10 to descend so that the lower end of the feeding assembly 10 penetrates through the furnace cover of the single crystal furnace and stretches into the quartz crucible to prepare for feeding, and after the silicon material is fed, the lifting assembly 20 works to drive the feeding assembly 10 to ascend so that the lower end of the feeding assembly 10 is far away from the quartz crucible to prepare for pulling; the lower extreme of bellows 11 sets up the sealing washer for with the feed inlet sealing connection of single crystal furnace bell, quartz capsule 12 inserts in bellows 11 and with the upper end department sealing connection of first flange 13 with bellows 11 and quartz capsule 12, lifting unit 20 work enables first flange 13 to move down, first flange 13 makes bellows 11 shrink gradually in the in-process of moving down, simultaneously first flange 13 promotes quartz capsule 12 and inserts gradually in the single crystal furnace and make the lower extreme of quartz capsule 12 be close to the fused silica liquid level in the quartz crucible gradually and accomplish the state of preparing to add the silicon material, can guarantee with external feeding device sealing connection in the single crystal furnace and add the silicon material again under the condition of conforming to the silicon material and melting, after opening gate valve 142, can add the silicon material from gate valve 142 continuously into seal storehouse 14, the silicon material that continuously gets into seal storehouse 14 falls into in the quartz capsule 12 and along the quartz capsule 12 of slope and gradually fall into the quartz crucible, the card material and the unloading of the feed process that lead to the fact because of storing silicon material accumulation in advance in the prior art has been solved, and the front end metal of quartz capsule has not had the problem that the quartz capsule has not fallen the metal has thoroughly been solved the quartz capsule after the metal has been scrapped. After the silicon material is added, the lifting assembly 20 drives the first flange 13 to gradually extend the corrugated pipe 11 in the upward moving process, and meanwhile, the first flange 13 pulls the quartz tube 12 gradually away from the quartz crucible so that the lower end of the quartz tube 12 is withdrawn from the single crystal furnace, so that the single crystal furnace is ready for a re-pulling process.

Claims

1. A continuous feeding device for producing monocrystalline silicon by a Czochralski method is characterized in that: the crystal pulling device comprises a feeding component and a lifting component, wherein the feeding component is arranged on the lifting component, the feeding component is in sealing connection with a furnace cover of a single crystal furnace to form a closed space with the single crystal furnace, the lifting component works to drive the feeding component to descend so that the lower end of the feeding component penetrates through the furnace cover of the single crystal furnace and stretches into a quartz crucible to prepare for feeding, and the lifting component works to drive the feeding component to ascend so that the lower end of the feeding component is far away from the quartz crucible to prepare for pulling; the feeding component comprises a corrugated pipe and a quartz pipe, the corrugated pipe is welded, a sealing ring is arranged at the lower end of the corrugated pipe for being in sealing connection with a feed inlet of a furnace cover of the single crystal furnace, the quartz pipe is inserted into the corrugated pipe and is in sealing connection with the upper end of the corrugated pipe and the upper end of the quartz pipe by a first flange, a closed bin is arranged at the upper end of the corrugated pipe, a silicon material inlet is formed in one side of the closed bin, a gate valve is arranged at the silicon material inlet, an opening at the upper end of the quartz pipe is close to the silicon material inlet and is located right below the silicon material inlet, the lower end of the quartz pipe is communicated with the inside of the single crystal furnace through the corrugated pipe, the closed bin and the quartz pipe form a silicon material adding channel, the lifting component is fixedly connected with the first flange, the lifting component works to enable the first flange to move up and down, the first flange is gradually contracted in the process of downwards moving the corrugated pipe, the first flange is gradually pushed into the single crystal furnace to enable the lower end of the quartz pipe to gradually approach the silicon melt silicon liquid level in the quartz crucible to complete the preparation adding silicon material state, and the lifting component drives the first flange to gradually extend upwards in the process of upwards moving the process, the first flange is gradually pulled to gradually withdraw from the lower end of the quartz pipe from the single crystal furnace to be convenient for preparing the silicon crystal pulling process.

2. The continuous feeding apparatus for producing silicon single crystal by the Czochralski method as claimed in claim 1, wherein: the lifting assembly comprises a supporting frame, a motor and a screw rod, wherein the lower end of the supporting frame is arranged at a charging hole of the single crystal furnace, the motor is arranged at the upper end of the supporting frame, the output end of the motor is fixedly connected with the upper end of the screw rod, a rotating roller at the lower end of the screw rod is connected to the supporting frame, a sliding piece is arranged on the supporting frame, a threaded hole is formed in the sliding piece, the threaded hole of the sliding piece and the external threads of the screw rod are matched with each other, two sides of the first flange are respectively provided with a connecting piece, each connecting piece is mutually fixed with the sliding piece, the screw rod drives the sliding piece to move upwards or downwards relative to the supporting frame in the rotating process driven by the motor, and the sliding piece drives the first flange to move along the sliding piece together in the upward or downwards moving process of the supporting frame, and the first flange drives the closed bin and the quartz tube to move up and down along the supporting frame in the moving process.

3. The continuous feeding apparatus for producing silicon single crystal by the Czochralski method as claimed in claim 2, wherein: the support frame includes bottom plate, roof, four support columns and a guide, and the lower extreme of every support column all is connected with the bottom plate, and the upper end and the roof of every support column are connected, and the upper and lower both ends of guide are connected with bottom plate and roof respectively, and the guide is located between four support columns, and the both sides of slider respectively set up a guide grip block, and every guide grip block is installed on the left and right sides border of guide and can slide from top to bottom along the guide, and one side of guide sets up bellows and seals the storehouse, and the opposite side of guide sets up screw rod and slider.

4. The continuous feeding apparatus for producing silicon single crystal by the Czochralski method as claimed in claim 1, wherein: the quartz tube comprises a receiving part and a guiding part, the receiving part is of an open structure, the lower end of the receiving part and the upper end of the guiding part are integrally formed, a flange is arranged at the joint of the receiving part and the guiding part, the guiding part penetrates through the first flange and then is arranged on the first flange, the receiving part is placed in the closed bin, an upper end opening of the receiving part is close to a silicon material inlet of the closed bin and is located below the silicon material inlet, and a lower end discharge opening of the guiding part is arranged in an inclined mode.

5. A continuous feeding apparatus for producing silicon single crystal by Czochralski method as claimed in claim 4, wherein: the material receiving part is in a hollow conical structure.

6. A continuous feed apparatus for producing silicon single crystal by the czochralski method as claimed in claim 3, wherein: the lower end of the corrugated pipe is provided with a second flange, the lower end face of the corrugated pipe is in sealing connection with the upper end face of the second flange, the lower end face of the second flange is in sealing connection with the upper end face of the bottom plate of the support frame, and the lower end face of the bottom plate of the support frame is in sealing connection with the flange on the furnace cover of the single crystal furnace.