CN219392211U

CN219392211U - Broadband photoelectronic integrated chip tester based on self heterodyne

Info

Publication number: CN219392211U
Application number: CN202320005437.9U
Authority: CN
Inventors: 冀涵颖; 邹新海
Original assignee: Chongqing University of Post and Telecommunications
Current assignee: Chongqing University of Post and Telecommunications
Priority date: 2023-01-03
Filing date: 2023-01-03
Publication date: 2023-07-21
Anticipated expiration: 2033-01-03

Abstract

The utility model discloses a broadband photoelectronic integrated chip tester based on self heterodyne, and belongs to the field of photoelectric detection. It comprises the following steps: the dual wavelength laser module is connected with the auxiliary electro-optic modulator through an optical path after passing through the beam splitter, the auxiliary electro-optic modulator is connected with the auxiliary electro-optic detector through the circulator, the output end of the auxiliary electro-optic detector is connected with the signal processing device through a circuit, and the power module is respectively connected with the dual wavelength laser module, the auxiliary electro-optic modulator, the auxiliary electro-optic detector and the signal processing device and supplies power.

Description

Broadband photoelectronic integrated chip tester based on self heterodyne

Technical Field

The utility model belongs to the field of photoelectric detection, and particularly relates to a broadband photoelectronic integrated chip testing device based on self heterodyne.

Background

Optoelectronic chips are the basic stone of a new generation of optical information systems, and in the development, detection and application processes of high-performance optical devices, optical systems or photonic chips, the multidimensional (amplitude, phase and the like) spectral response of the optoelectronic chips needs to be accurately measured.

At present, the test of an optoelectronic chip mainly faces two technical problems, firstly, an additional calibration technology is needed; secondly, the number of measurement parameters is small, different devices and different parameters correspond to different testing technologies and means, and a unified integrated testing model and technology are lacked to realize the characteristic test of different types of optoelectronic devices.

Disclosure of Invention

The present utility model is directed to solving the above problems of the prior art. A broadband photoelectronic integrated chip tester based on self heterodyne is provided. The technical scheme of the utility model is as follows:

a self-heterodyne based broadband optoelectronic integrated chip tester, comprising: the dual wavelength laser module is connected with the auxiliary electro-optic modulator through an optical path after passing through the beam splitter, the auxiliary electro-optic modulator is connected with the auxiliary electro-optic detector through the circulator, the output end of the auxiliary electro-optic detector is connected with the signal processing device through a circuit, and the power module is respectively connected with the dual wavelength laser module, the auxiliary electro-optic modulator, the auxiliary electro-optic detector and the signal processing device and supplies power.

Furthermore, the auxiliary electro-optical modulator is also provided with a microwave source input interface, and the microwave source input interface provides carrier signals for the operation of the auxiliary electro-optical modulator.

Further, the optoelectronic chip to be tested also comprises a connecting port and an output display panel, wherein: the optoelectronic chip connecting port to be tested is respectively connected with the electro-optical modulator to be tested and the photoelectric detector to be tested, and the output display panel displays the amplitude of the output signal and the measured value of the parameter to be tested.

Further, the dual wavelength laser module: comprises a light source, an interference structure and a frequency shifter, wherein the frequency of the single-wavelength light generated by the light source can be divided, shifted and combined by frequency shift, and then the two beams are output with the frequency interval f _s Is a dual wavelength optical wave.

Further, the dual-wavelength laser module uses a LC25W5333EBS-J5 dual-wavelength laser, the auxiliary electro-optical modulator uses a LINbO3 photoelectric modulator, and the auxiliary photoelectric detector uses a KY-PRM-40G type 40Gbps high-speed light detection module.

The utility model has the advantages and beneficial effects as follows:

the utility model aims to overcome the defect that the existing optical chip test lacks an integrated test model and technology to realize the characteristic test of different types of optoelectronic devices, and provides a testing instrument capable of realizing the high definition, large bandwidth and self calibration of the characteristic parameters of different types of optical chips. Compared with the existing modulation mixing detection method, the utility model has simple test structure and greatly reduces the measurement cost. By adding the circulator, the optical signal can be switched between two branches, so that the parameter measurement of the photoelectric detector and the photoelectric modulator is realized. The current measuring instrument measures the relative parameters of the optoelectronic chip, and the intrinsic parameters of the device can be measured by using the technology.

Drawings

FIG. 1 is a schematic diagram of an optoelectronic chip tester according to a preferred embodiment of the present utility model;

FIG. 2 is a functional equivalent schematic of an optoelectronic chip tester;

in the figure, a 1-dual-wavelength laser module 2-a power module 3-an auxiliary electro-optical modulator 4-an auxiliary photoelectric detector 5-an insulating layer 6-a circulator 7-a microwave signal input port 8 and a 9-an optoelectronic chip connecting port 10 to be tested-output display panels.

Detailed Description

The technical solutions in the embodiments of the present utility model will be clearly and specifically described below with reference to the drawings in the embodiments of the present utility model. The described embodiments are only a few embodiments of the present utility model.

The technical scheme for solving the technical problems is as follows:

the optoelectronic chip tester is shown in figure 1. It is composed of a dual wavelength laser module 1, a power supply module 2, an auxiliary electro-optical modulator 3, an auxiliary photoelectric detector 4, a signal processing device 5 and a circulator 6. The optical chip tester with the structure can simultaneously realize the measurement of characteristic parameters of different optical chips.

The photoelectric detector to be measured is connected to the connecting port 9 of the optoelectronic chip to be measured, a microwave signal source is connected to the microwave signal input port 7 to input a microwave signal for driving the modulator, and measurement is started. The dual-wavelength laser module 1 generates two beams with a frequency interval f _s Is a dual-wavelength light wave, and the frequency of the external microwave signal source is f ₁ Is loaded on the dual wavelength optical wave by the auxiliary electro-optical modulator 3. The modulated optical signal is photoelectrically converted by a photodetector to be measured to obtain a mixed signal, and the photocurrent of the mixed signal is recorded by the signal processing device 5. By changing the frequency of the microwave signal source, the intrinsic parameters such as the frequency response of the detector to be detected can be obtained.

The novelty and creativity of the present utility model: the instrument can realize the measurement of intrinsic parameters of various optoelectronic chips without an additional broadband microwave source and a broadband modulator. The instrument has the advantages that: (1) The instrument required by the measuring optical chip is integrated and integrated, and the reconfigurability is strong; (2) the intrinsic parameters of the optoelectronic chip can be measured; (3) An interface to be measured is reserved, so that the connection with the intrinsic module is convenient, and the measurement is convenient; and (4) the operation is simple and direct, and the measured data is visual.

(1) Dual wavelength laser module: the device comprises a light source, an interference structure and a frequency shifter, wherein single-wavelength light generated by the light source can be split, frequency shifted and combined through frequency shifting, and then two light waves with two frequencies at intervals are output.

(2) And a power supply module: and providing working voltage for each module in the product.

(3) Auxiliary electro-optic modulator: the suppression of the odd-order and the suppression of the even-order optical sideband modulation is achieved by loading the microwave signal onto the dual-wavelength optical wave.

(4) Auxiliary photodetector: the modulated optical signals are converted into electrical signals and transmitted into the control module through the SMA radio frequency port.

(5) An electric signal processing module: and the DSP chip is arranged in the display panel, and the display panel is connected with the electric signal after data processing so as to realize the data output to the outside.

(6) Ring device: the signal is transmitted unidirectionally according to a prescribed route, so that the modulator and the photoelectric detector can be measured respectively by the same system.

(7) Microwave signal input port: a microwave signal driving the modulator is input.

(8) (9), an optoelectronic chip connection port to be tested: and respectively accessing an electro-optical modulator to be tested and a photoelectric detector.

And outputting a display panel: and displaying the amplitude of the output signal and the measured value of the parameter to be measured.

(1) By adding the circulator, the optical signal can be switched between two branches, so that the parameter measurement of the photoelectric detector and the photoelectric modulator is realized, and the situation that most of optical vector analyzers on the market can only test single type of photoelectronic chips is broken.

(2) The current measuring instrument measures a plurality of relative parameters of the optoelectronic chip, and the technology can realize the measurement of intrinsic parameters of the device, and the measuring parameters are various.

(3) And meanwhile, compared with the current modulation mixing detection method, the method does not need an additional broadband microwave source and broadband modulator for testing, has a simple testing structure and greatly reduces the measuring cost.

The system, apparatus, module or unit set forth in the above embodiments may be implemented in particular by a computer chip or entity, or by a product having a certain function.

It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.

The above examples should be understood as illustrative only and not limiting the scope of the utility model. Various changes and modifications to the present utility model may be made by one skilled in the art after reading the teachings herein, and such equivalent changes and modifications are intended to fall within the scope of the utility model as defined in the appended claims.

Claims

1. A broadband optoelectronic integrated chip tester based on self heterodyne, comprising: the dual wavelength laser module is connected with the auxiliary electro-optic modulator through an optical path after passing through the beam splitter, the auxiliary electro-optic modulator is connected with the auxiliary electro-optic detector through the circulator, the output end of the auxiliary electro-optic detector is connected with the signal processing device through a circuit, and the power module is respectively connected with the dual wavelength laser module, the auxiliary electro-optic modulator, the auxiliary electro-optic detector and the signal processing device and supplies power.

2. The self-heterodyne based broadband optoelectronic integrated chip tester according to claim 1, wherein the auxiliary electro-optic modulator further has a microwave source input interface providing a carrier signal for its operation.

3. The self-heterodyne based broadband optoelectronic integrated chip tester according to claim 1, further comprising an optoelectronic chip connection port under test and an output display panel, wherein: the optoelectronic chip connecting port to be tested is respectively connected with the electro-optical modulator to be tested and the photoelectric detector to be tested, and the output display panel displays the amplitude of the output signal and the measured value of the parameter to be tested.

4. The self-heterodyne based broadband optoelectronic integrated chip tester according to claim 1, wherein the dual wavelength laser module: the device comprises a light source, an interference structure and a frequency shifter, wherein single-wavelength light generated by the light source can be split, frequency shifted and combined through frequency shifting, and then two light waves with two frequencies at intervals are output.

5. The self-heterodyne broadband optoelectronic integrated chip tester according to claim 1, wherein the dual wavelength laser module uses LC25W5333EBS-J5 dual wavelength laser, the auxiliary electro-optic modulator uses a LINbO3 photo-electric modulator, and the auxiliary photo-detector uses a KY-PRM-40G type 40Gbps high speed photo-detection module.