CN219350230U - Backside illuminated integrated image sensor - Google Patents
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- CN219350230U CN219350230U CN202221524701.1U CN202221524701U CN219350230U CN 219350230 U CN219350230 U CN 219350230U CN 202221524701 U CN202221524701 U CN 202221524701U CN 219350230 U CN219350230 U CN 219350230U
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- 230000000737 periodic effect Effects 0.000 claims abstract description 53
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011159 matrix material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000012780 transparent material Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- Engineering & Computer Science (AREA)
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Embodiments of the present disclosure relate to a backside illuminated integrated image sensor. The integrated sensor includes a substrate made of a first semiconductor material having a first optical refractive index. The substrate includes an array of pixels, wherein each pixel has a photosensitive active region formed by a refractive contrast region comprising a matrix of a first semiconductor material and a periodic structure embedded in the matrix. The periodic structure extends from the back surface of the substrate and has a two-dimensional periodicity in a plane parallel to the back surface. The value of the periodicity is related to the wavelength of the optical signal and the first refractive index. The elements of the periodic structure are formed of a second optically transparent material having a second refractive index that is less than the first refractive index. These elements are located at periodically defined positions except at one position, preferably at the center, of a defined area, which is free of the corresponding one of the elements. Thus, an improved sensor is provided.
Description
Technical Field
Implementations and embodiments relate to back-side illumination (BSI), and more particularly to enhancement of quantum efficiency thereof, particularly in the infrared range.
Background
An integrated image sensor includes an array of pixels in a substrate associated with control and processing electronics related to signals provided by the pixels.
When the image sensor is to be illuminated by an optical signal passing through the back side of the substrate, it is referred to as back side illumination.
The quantum efficiency of a pixel is defined by the ratio of the number of electrons generated to the number of photons received when the pixel absorbs an optical signal.
The higher the efficiency, the better the sensitivity of the sensor and the better the signal to noise ratio.
Therefore, it is required to improve the quantum efficiency of the back-illuminated integrated image sensor.
There is also a need to provide gain in terms of crosstalk caused by optical coupling between pixels (interference light signals reflected or diffracted from one pixel to its neighboring pixels) and in terms of modulation transfer functions in order to obtain excellent contrast on an image.
Disclosure of Invention
Embodiments of the present disclosure address at least some of the above problems.
According to one aspect of the present disclosure, there is provided a backside illuminated integrated image sensor including: a substrate having a back side configured to be illuminated by an optical signal and comprising a first semiconductor material having a first optical refractive index; and an array of pixels in the substrate; wherein each pixel has a photosensitive active region; wherein each photosensitive active region is a refractive contrast region comprising a matrix formed of a first semiconductor material and a periodic structure embedded in the matrix, the periodic structure extending from a back surface in the matrix; wherein the periodic structure has a two-dimensional periodicity in a plane parallel to the back surface; wherein the value of the two-dimensional periodicity is associated with the wavelength of the optical signal and with the first optical refractive index; and the periodic structure is formed of a plurality of elements made of a second optically transparent material having a second refractive index less than the first refractive index, the plurality of elements being located at positions defined by the two-dimensional periodicity; and wherein the photoactive region comprises a region at one of the locations defined by the two-dimensional periodicity, the region being devoid of a corresponding one of the elements.
In some embodiments, the region is a central region.
In some embodiments, the periodic structure has a honeycomb arrangement of elements in a two-dimensional periodic plane.
In some embodiments, the crystal density of all elements occupies at least 50% of the surface area of the photosensitive region in a two-dimensional periodic plane.
In some embodiments, the element is a rod.
In some embodiments, the first semiconductor material comprises a silicon structure.
In some embodiments, the wavelength of the optical signal is equal to 940nm, and the spacing between elements in the plane of the two-dimensional periodicity is on the order of 400 nm.
In some embodiments, the second optically transparent material comprises a silica structure.
In some embodiments, each rod has a cross section with a diameter on the order of 200 nm.
In some embodiments, the structure extends in the matrix to a position located at a distance from the front of the substrate.
In some embodiments, the back-illuminated integrated image sensor further includes an optical mirror positioned to face each photosensitive region opposite the back surface.
In some embodiments, the pixel array has a periodic arrangement with a pitch that is an integer ratio to the period of the periodic structure.
In one embodiment, each pixel is formed with a photonic periodic structure having a two-dimensional periodicity in a plane parallel to the back surface, the photonic structure having a defect, for example, at the level of its central region.
Thus, according to one aspect, a back-illuminated integrated image sensor is presented.
The sensor is intended to be illuminated by an optical signal, such as, but not limited to, a signal in the infrared range having a wavelength of 940 nm.
The sensor includes a substrate having a backside and comprising a first semiconductor material (e.g., silicon) having a first optical refractive index.
The sensor includes an array of pixels in a substrate.
Each pixel has a photosensitive active region.
Each photosensitive active region is a refractive index contrast region comprising a matrix formed of a first semiconductor material (e.g. silicon) and embedded in the matrix a periodic structure formed of a second material (e.g. silicon dioxide) having a lower refractive index than the first material.
The periodic structure extends from the back surface into the matrix and has a two-dimensional periodicity in a plane parallel to the back surface.
The two-dimensional periodicity is not necessarily the same along two orthogonal directions of the plane.
The periodic structure is referred to as a photonic crystal because the value of the periodicity is related to the wavelength of the optical signal and the first refractive index, and the first material directs the optical signal to propagate through the photosensitive region.
Thus, typically, the periodicity value is at least substantially equal to the ratio between the wavelength of the optical signal and the refractive index of the first material. That is, to further enhance performance, the periodicity value may be taken to be equal to a ratio increase of several tens of percent, for example 30%.
The periodic structure has a plurality of elements, such as rods, formed of a second optically transparent (i.e., non-absorptive) material and having a second refractive index that is less than the first refractive index.
Furthermore, the periodic structure has a region, such as a central region, that is free of at least one of these elements.
Thus, due to the presence of the defect (absence of at least one low refractive index and optically transparent element) in the central region, the optical radiation will be confined in a specific volume of the pixel, e.g. in the center of the pixel, and the periodic structure will slow down its propagation in the first material, e.g. silicon.
This will therefore lead to a greater absorption in the first material and thus to a greater number of electrons being generated during the pixel integration time, resulting in an increase in quantum efficiency.
The periodic structure has a honeycomb structure of, for example, elements in its periodic plane.
Furthermore, it is particularly advantageous that in the periodic plane, the crystal density of all optically transparent elements occupies at least 50% of the surface area of the photosensitive region.
This makes it possible to further improve the quantum efficiency.
As mentioned above, the element may be a rod having a cross section of various shapes (circular, rectangular, star-shaped, etc.) in a periodic plane.
When the first material is silicon and the wavelength of the optical signal is equal to 940nm, the spacing between the optically transparent elements in the periodic plane may be on the order of 400nm (i.e., equal to 400nm within +/-30%).
The second optically transparent material may be, for example, silica.
Each rod may have another cross-section with a diameter of 200nm (i.e., 200nm within +/-25%).
In order to ensure a correct collection of the charge generated to the transistor of the processing electronics, it is preferred that the structure extends in the matrix to a position located at a distance from the front side of the substrate.
In addition, in order to further increase the absorption efficiency in the first material, it is advantageous if the sensor further comprises an optical mirror facing each photosensitive region opposite the back surface.
When the pixel array has a periodic arrangement with a pitch N that is proportional to the integral ratio of the period of the periodic structure (i.e. equal to k times the period of the periodic structure, k being an integer), it is advantageous to further enhance the operation of the sensor.
Drawings
Further advantages and features of the utility model will appear from a study of the detailed description of a non-limiting implementation and embodiments, together with the accompanying drawings, in which:
FIG. 1 schematically illustrates an integrated image sensor;
FIG. 2 is a cross-sectional view of a pixel;
FIG. 3 is a cross-sectional view along line III-III of FIG. 2;
fig. 4 schematically shows the values of periodicity associated with wavelengths; and
fig. 5-8 illustrate implementations of a method for fabricating a pixel.
Detailed Description
In fig. 1, the reference symbol CPT denotes an integrated image sensor, which is very schematically shown to comprise a substrate 1, for example made of silicon, the substrate 1 having a back face FAR and a front face FAV.
The rear FAR is intended to be illuminated by the light signal SL, e.g. an infrared signal, typically by means of an optical device, such as a lens, optionally a color filter, a polarizing means, these examples not being limiting.
The sensor comprises a pixel array PXAR in the substrate 1.
Here, the pixel array has a periodic arrangement with a pitch N between the pixels PX.
The image sensor CPT comprises an interconnect 2 on the front side of the substrate 1, which is generally indicated by the person skilled in the art using the abbreviation BEOL (back end of line).
The part 2 generally comprises metal tracks and vias for providing interconnections between the different elements of the sensor, in particular pixels, and transistors for control and processing electronics, not shown here for the sake of simplicity, with respect to the signals emitted by the pixels.
That is, these control electronics have a conventional structure known per se.
Fig. 2 schematically illustrates a cross-sectional view of a pixel PX of the pixel array PXAR.
The pixel PX comprises a refractive contrast photosensitive region forming a matrix 50 of a first semiconductor material, typically silicon of a substrate.
In addition, the refraction contrast photosensitive region includes a periodic structure 5 embedded in a matrix 50 and includes a plurality of elements 51 formed of a second optically transparent (non-absorptive) material, such as silica.
When the optical refractive index of the first material (silicon) is different from the refractive index of the second material (silicon dioxide), the photosensitive regions are said to be index-contrasting.
The refractive index of the first material forming the matrix 50 has a refractive index that is greater than the refractive index of the second optically transparent material.
For example, silicon has a refractive index of approximately 3.4, and silicon dioxide has a refractive index of approximately 1.46.
As shown in fig. 2, the elements 51 of the periodic structure 5 extend from the back FAR of the substrate to a depth less than the depth of the substrate.
In other words, the element 51 (typically a rod) stops at a distance d from the front face FAV of the substrate. The distance d is for example of the order of 1 to 2 micrometers.
On the rear face FAR of the photosensitive area, an optical device 4, for example a lens here, is arranged.
In addition to the metal tracks 20, the interconnect portion 2 comprises an optical metal mirror 3, which optical metal mirror 3 is arranged to face the photosensitive region of the pixel, more particularly the front face FAV.
The metal mirror is advantageously formed of the metal layer of the interconnect.
As shown in fig. 3, fig. 3 is a cross-sectional view along line III-III of fig. 2, the periodic structure 5 has a two-dimensional periodicity in a plane, which is the plane of fig. 3, and which is a plane parallel to the back face FAR.
The periodic structure has a honeycomb arrangement of elements 51 in its periodic plane at locations defined by the periodicity/pitch and the matrix, and here has a central region 500, the central region 500 having defects (i.e., regions without at least one of the elements 51).
In other words, the central region 500 comprises a first material, here silicon.
As schematically shown in fig. 4, the periodic value is associated with the wavelength of the optical signal SL and with the first refractive index of the first material, here silicon.
In order to increase the density of the second material, as in the case of a honeycomb structure, the periodicity in the planar direction may optionally be different from the periodicity in other orthogonal directions.
More specifically, for the wavelength of the optical signal SL equal to 940nm corresponding to the infrared ray, the pitch between the elements 51 in the periodic plane is of the order of 400nm±30% (the sides of an equilateral triangle connecting the centers of the three rods 51).
To further enhance the operation of the sensor, the pitch N of the pixels PX is advantageously an integer ratio with the pitch between the elements 51.
Furthermore, the diameter of the rods 51 is of the order of 200nm±25%, and the crystal density of the cross section of all rods occupies at least 50% of the surface area of the photosensitive region, and for example, 50%.
A defect of the periodic structure, preferably the center of the periodic structure (i.e. there is no at least one bar at a location in the preferably central region 500 that would otherwise have bars according to a defined pitch or periodicity), forms a waveguide for the optical radiation SL, and the periodic structure surrounding this waveguide would slow down the propagation rate of the optical signal in the silicon and thus increase the absorption time and quantum efficiency of the pixel.
Thus, a 25% increase in quantum energy can be obtained as compared to a pixel without a periodic structure having defects in the photosensitive region.
In operation, an optical signal irradiates the back of the sensor, enters the central region 500 of the photosensitive region after passing through the lens 4 and propagates in the waveguide, reflects off the metal mirror 3 and is distributed in the waveguide. This return in the waveguide further increases the absorption time in silicon and thus further increases the quantum energy of the pixel. The reflection quality for the same pixel also provides gain in terms of crosstalk and modulation transfer function due to the presence of the waveguide (and not diffracting to neighboring pixels).
An implementation of a method for manufacturing such a pixel will now be described with more specific reference to fig. 5 to 8.
Obviously, all pixels are implemented simultaneously, but fig. 5 to 8 show only the steps for one pixel.
In fig. 5, a substrate is provided that includes an epitaxial region 50 (host) of silicon having a height of, for example, 6 to 9 microns.
The front of the photosensitive area (front of the substrate 50) FAV supports the interconnect portion 2 comprising the metal mirror 3.
On the back side of the substrate 50, a mask 7, such as a resin mask, is formed, the holes of which define the locations of the future silicon dioxide rods (see fig. 6).
Then, as shown in fig. 7, silicon of the substrate 50 is subjected to conventional etching known per se through the holes of the mask 7, and the holes thus formed are filled with silicon dioxide to form the rods 51.
It should be noted here that, as mentioned above, it is particularly advantageous that the ends of the rods 51, and thus of the holes produced by etching, are located at a distance d (for example of the order of 1 to 2 microns) from the front of the substrate 50, so as to promote good collection of electrons produced by the absorption of the optical signal in the silicon.
Then, as shown in fig. 8, the mask 7 is removed, the back surface is polished, and the lens 4 is fixed to the back surface of the pixel, thereby forming the pixel shown in fig. 2.
The utility model is not limited to the described implementations and embodiments, but includes all variants.
Thus, even if the area of the periodic structure having defects is preferably a central area, this area may not be central, especially for manufacturing reasons.
In addition, other first materials are also possible, such as germanium or a silicon/germanium alloy. Additional second materials are possible, such as silicon nitride or high dielectric constant dielectrics, known to those skilled in the art as "high K".
Furthermore, other wavelengths of the optical signal SL (optionally in the visible range) are also possible, in exchange for adjustment of the periodic structure size.
Aspect 1. A method for manufacturing a backside illuminated integrated image sensor, comprising: in a substrate having a back surface intended to be illuminated by an optical signal and comprising a first semiconductor material having a first optical refractive index:
forming a pixel array including a photosensitive active region for each pixel;
forming a periodic structure in each photosensitive active region, the periodic structure being embedded in a matrix formed of the first semiconductor material;
wherein the periodic structure extends from the back surface in the matrix and has a two-dimensional periodicity in a plane parallel to the back surface;
wherein the value of the two-dimensional periodicity is associated with a wavelength of the optical signal and with the first refractive index;
wherein forming the periodic structure comprises:
generating a plurality of elements formed of a second optically transparent material having a second refractive index less than the first refractive index, the plurality of elements being located at positions defined by the two-dimensional periodicity; and
a region is defined at one of the locations defined by the two-dimensional periodicity, the region being devoid of a corresponding one of the elements.
forming a mask defining a location of the element on the back surface;
etching the substrate through the mask; and
the holes created by the etching are filled with the second material.
Aspect 6 the method of aspect 1, further comprising providing an optical mirror facing a photosensitive region of the pixel, the photosensitive region being opposite the back surface.
Claims (12)
1. A backside illuminated integrated image sensor, comprising:
a substrate of a first semiconductor material having a back side configured to be illuminated by an optical signal, the substrate of the first semiconductor material having a first optical refractive index; and
an array of pixels in a substrate;
wherein each pixel has a photosensitive active region;
wherein each photosensitive active region is a refractive contrast region comprising a matrix formed of a first semiconductor material and a periodic structure embedded in the matrix, the periodic structure extending in the matrix from the back surface;
wherein the periodic structure has a two-dimensional periodicity in a plane parallel to the back surface;
wherein the value of the two-dimensional periodicity is associated with a wavelength of the optical signal and with the first optical refractive index; and
the periodic structure is formed from a plurality of elements made from a second optically transparent material having a second refractive index less than the first optical refractive index, the plurality of elements being located at positions defined by the two-dimensional periodicity; and
wherein the photoactive active region comprises a region at one of the locations defined by the two-dimensional periodicity, the region being devoid of a corresponding one of the elements.
2. The back side illuminated integrated image sensor of claim 1, wherein the area is a center area.
3. The back side illuminated integrated image sensor of claim 1, wherein the periodic structure has a honeycomb arrangement of the elements in the plane of the two-dimensional periodicity.
4. The backside illuminated integrated image sensor of claim 1, wherein in the plane of the two-dimensional periodicity, a crystal density of all elements occupies at least 50% of a surface area of the photosensitive active region.
5. The back side illuminated integrated image sensor of claim 1, wherein the element is a rod.
6. The backside illuminated integrated image sensor of claim 1, wherein the first semiconductor material is a silicon structure.
7. The back side illuminated integrated image sensor according to claim 5, wherein the wavelength of the optical signal is equal to 940nm and the spacing between the elements in the plane of the two-dimensional periodicity is on the order of 400 nm.
8. The back side illuminated integrated image sensor of claim 7, wherein the second optically transparent material is a silica structure.
9. The back side illuminated integrated image sensor of claim 8, wherein each bar has a cross section with a diameter on the order of 200 nm.
10. The back side illuminated integrated image sensor of claim 1, wherein the structure extends in the matrix to a position located at a distance from the front side of the substrate.
11. The back side illuminated integrated image sensor of claim 1, further comprising an optical mirror positioned to face each photosensitive region opposite the back side.
12. The back side illuminated integrated image sensor of claim 1, wherein the pixel array has a periodic arrangement having a pitch that is an integer ratio to a period of the periodic structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2106486A FR3124309A1 (en) | 2021-06-18 | 2021-06-18 | Backside illumination image sensor and manufacturing method |
| FR2106486 | 2021-06-18 | ||
| US17/840,437 US20220406829A1 (en) | 2021-06-18 | 2022-06-14 | Backside illumination image sensor and manufacturing method |
| US17/840,437 | 2022-06-14 |
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| CN219350230U true CN219350230U (en) | 2023-07-14 |
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