CN219286337U

CN219286337U - Plasma processing apparatus and thin film forming apparatus

Info

Publication number: CN219286337U
Application number: CN202320110726.5U
Authority: CN
Inventors: 乐卫平; 刘涛; 黄晓东
Original assignee: Shenzhen CSL Vacuum Science and Technology Co Ltd
Current assignee: Shenzhen CSL Vacuum Science and Technology Co Ltd
Priority date: 2023-01-16
Filing date: 2023-01-16
Publication date: 2023-06-30
Anticipated expiration: 2033-01-16

Abstract

The utility model discloses a plasma processing device and a film forming device, comprising a reaction shell, a coil component and a first dielectric plate, wherein the reaction shell is provided with a reaction cavity, the reaction cavity is provided with an opening, the coil shell is arranged at the opening of the reaction cavity and is connected with the reaction shell, the coil shell is provided with a coil accommodating groove which is arranged opposite to the opening of the reaction cavity, the coil component is arranged in the coil accommodating groove, and the first dielectric plate is covered at the opening of the coil accommodating groove so as to separate the coil accommodating groove from the reaction cavity. According to the technical scheme, the first dielectric plate is covered at the opening of the coil accommodating groove and is abutted against the edge surface of the notch of the coil accommodating groove, so that the bearing force of the first dielectric plate is reduced, the thickness of the first dielectric plate is further reduced, the coil assembly can be more close to plasma gas in the reaction cavity, and the ionization effect of the coil assembly on the plasma gas is improved.

Description

Plasma processing apparatus and thin film forming apparatus

Technical Field

The present utility model relates to the field of semiconductor manufacturing technology, and in particular, to a plasma processing apparatus and a thin film forming apparatus.

Background

Plasma processing apparatuses are one of the common devices in the field of semiconductor fabrication, which ionize a gas containing film constituent atoms mainly by means of microwaves or radio frequencies to generate plasma, and deposit a desired film on a substrate by reaction of the plasma with the surface of the substrate.

Conventional plasma processing apparatuses generally include a reaction housing formed with a reaction chamber to provide a reaction space for plasma gas, a coil housing formed with a coil receiving groove to set a coil to provide microwaves or radio frequencies, and a dielectric plate disposed between the reaction chamber and the coil receiving groove to divide the reaction chamber and the coil receiving groove so that the reaction chamber maintains a closed vacuum.

However, in the conventional plasma processing apparatus, the coil and the coil housing are generally connected to the dielectric plate, and in order for the dielectric plate to withstand the pressure from the coil and the coil housing, the designer has to reinforce the thickness of the dielectric plate to increase the bearing force of the dielectric plate, however, too thick the dielectric plate may affect the ionization effect of the plasma gas by the coil while the pressure from the coil and the coil housing may affect the service life of the dielectric plate.

Disclosure of Invention

The utility model mainly aims to provide a plasma processing device and a film forming device, which aim to solve the problem that the thickness of a dielectric plate is too thick in the conventional plasma processing device.

In order to achieve the above object, the present utility model provides a plasma processing apparatus comprising:

a reaction housing forming a reaction chamber having an opening;

the coil shell is arranged at the opening of the reaction cavity and is connected with the reaction shell, and a coil accommodating groove which is arranged opposite to the opening of the reaction cavity is formed in the coil shell;

a coil assembly disposed in the coil receiving slot; the method comprises the steps of,

and the first dielectric plate is covered at the opening of the coil accommodating groove so as to separate the coil accommodating groove and the reaction cavity.

Optionally, the reaction housing comprises a support arm extending laterally inward from an opening of the reaction chamber;

the coil housing includes a connection arm extending laterally outwardly from a notch edge of the coil housing, and the coil housing is connected to a support arm of the reaction housing through the connection arm.

Optionally, the reaction housing comprises a support arm bent inwards along the transverse direction from the opening of the reaction cavity;

the coil housing is outwards protruded along the transverse direction on one side, deviating from the coil accommodating groove, of the coil housing to form a connecting arm, the coil housing is connected to the supporting arm of the reaction housing through the connecting arm, and the coil accommodating groove at least partially stretches into the reaction cavity.

Optionally, the plasma processing apparatus further includes a second dielectric plate disposed within the coil-receiving slot;

the second dielectric plate and the first dielectric plate jointly enclose a sealed space, and the coil assembly is arranged in the sealed space;

the sealed space is vacuum setting, and the vacuum degree of sealed space is adjustable.

Optionally, a first wire through hole is formed in the bottom of the coil accommodating groove;

the second dielectric plate is provided with a second wire through hole corresponding to the first wire through hole;

the coil assembly comprises two coils arranged at intervals, the coils comprise electric connection parts extending towards the opening direction of the coil accommodating groove, and the electric connection parts sequentially penetrate through the first wire passing holes and the second wire passing holes to be connected with a power supply outside the coil accommodating groove.

Optionally, the electrical connection portion is hermetically connected to the first via and the second via.

Optionally, the first dielectric plate and the second dielectric plate are made of quartz.

Optionally, the second dielectric plate includes a horizontal section disposed at the bottom of the coil accommodating groove, and a vertical section extending from a peripheral end of the horizontal section toward the opening of the coil accommodating groove, where the vertical section and a side wall surface of the coil accommodating groove together enclose a mounting groove;

the plasma processing device comprises a first magnetic structure, and the first magnetic structure is arranged in the mounting groove.

Optionally, the plasma processing apparatus further includes a second magnetic structure, where the second magnetic structure is disposed on a side of the reaction housing facing away from the reaction chamber.

The utility model also provides a film forming device, which comprises a plasma processing device, wherein the plasma processing device comprises:

a reaction housing forming a reaction chamber having an opening;

According to the technical scheme, the coil housing is connected to the reaction housing, the reaction housing is provided with a downward opening and is used for providing a reaction space for plasma, the coil housing is provided with an upward opening, a coil accommodating groove which is opposite to the reaction space is formed in the coil housing, a coil assembly which is used for providing energy for plasma ionization is arranged in the coil accommodating groove, and the first dielectric plate cover is arranged at the opening of the coil accommodating groove so as to separate the reaction space from the coil accommodating groove, so that the reaction space is kept in a vacuum state, the lower end face of the first dielectric plate is abutted against the notch edge face of the coil accommodating groove, so that the bearing force of the first dielectric plate is reduced, the thickness of the first dielectric plate is reduced, the coil assembly can be closer to plasma gas in the reaction cavity, and the ionization effect of the coil assembly on the plasma gas is improved.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a cross-sectional view of a prior art plasma processing apparatus;

FIG. 2 is a cross-sectional view of an embodiment of a plasma processing apparatus according to the present utility model;

FIG. 3 is a cross-sectional view of another embodiment of a plasma processing apparatus according to the present utility model;

FIG. 4 is a cross-sectional view of an embodiment of FIG. 2 with the addition of a first magnetic structure;

FIG. 5 is a cross-sectional view of yet another embodiment of the magnetic structure of FIG. 2 with the addition of a first magnetic structure;

FIG. 6 is a cross-sectional view of an embodiment of FIG. 2 with the addition of a second magnetic structure;

fig. 7 is a cross-sectional view of yet another embodiment of fig. 2 with the addition of a second magnetic structure.

Description of prior art reference numerals:

reference numerals	Name of the name	Reference numerals	Name of the name
				1’	Reaction shell	3’	Dielectric plate
11’	Reaction chamber	4’	Flange
				2’	Coil housing	5’	Coil assembly
21’	Coil accommodating groove

The reference numerals of the application illustrate:

reference numerals	Name of the name	Reference numerals	Name of the name
				1	Reaction shell	311	Electric connection part
11	Reaction chamber	4	First dielectric plate
				12	Support arm	5	Second dielectric plate
2	Coil housing	51	Second via hole
				21	Coil accommodating groove	52	Horizontal segment
211	First via hole	53	Vertical section
				22	Connecting arm	6	First magnetic structure
3	Coil assembly	7	Second magnetic structure
				31	Coil	8	Flange

The achievement of the objects, functional features and advantages of the present utility model will be further described with reference to the accompanying drawings, in conjunction with the embodiments.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present utility model are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.

Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present utility model.

Specifically, referring to fig. 1, fig. 1 is a cross-sectional view of a plasma processing apparatus in the prior art, in which a coil housing 2' is connected to a dielectric plate 3' through a flange 4' to separate a coil accommodating groove 21' and a reaction chamber 11', the dielectric plate 3' needs to withstand not only tensile forces from the flange 4', a coil assembly 5', and the coil housing 2', but also compressive forces from the reaction housing 1', resulting in a thickness of the dielectric plate 3' of at least 30mm, which greatly affects an ionization effect of the coil assembly 5' on plasma gas in the reaction chamber 11 '.

In order to solve the above problems, the present utility model provides a plasma processing apparatus and a thin film forming apparatus, which are aimed at solving the problem of excessive thickness of dielectric plate in the conventional plasma processing apparatus, wherein fig. 1 to 7 are cross-sectional views of embodiments of the plasma processing apparatus provided by the present utility model.

Referring to fig. 2, the plasma processing apparatus includes a reaction housing 1, a coil housing 2, a coil assembly 33, and a first dielectric plate 4, wherein the reaction housing 1 is formed with a reaction chamber 11, the reaction chamber 11 has an opening, the coil housing 2 is disposed at the opening of the reaction chamber 11, the coil housing 2 is connected with the reaction housing 1, the coil housing 2 is formed with a coil accommodating groove 21 disposed opposite to the opening of the reaction chamber 11, the coil assembly 33 is disposed in the coil accommodating groove 21, and the first dielectric plate 4 is disposed at the opening of the coil accommodating groove 21 to separate the coil accommodating groove 21 from the reaction chamber 11.

In the technical solution of the present utility model, the coil housing 2 is connected to the reaction housing 1, the reaction housing 1 is formed with a reaction chamber 11 that is opened downward to provide a reaction space for plasma, the coil housing 2 is formed with a coil accommodating groove 21 that is opened upward and is opposite to the reaction chamber 11, a coil assembly 33 that is used to provide energy for plasma ionization is disposed in the coil accommodating groove 21, the first dielectric plate 4 is covered at the opening of the coil accommodating groove 21 to separate the reaction chamber 11 from the coil accommodating groove 21, so that the reaction chamber 11 is kept in a vacuum state, and the lower end surface of the first dielectric plate 4 is abutted to the notch edge surface of the coil accommodating groove 21, so that the bearing force of the first dielectric plate 4 is reduced, and the thickness of the first dielectric plate 4 is further reduced, so that the coil assembly 33 can be closer to the plasma gas in the reaction chamber 11, and the ionization effect of the coil assembly 33 on the plasma gas is improved.

Referring to fig. 2, in an embodiment of the present utility model, the reaction housing 1 includes a support arm 12 extending from an opening of the reaction chamber 11 in a lateral direction, the coil housing 2 includes a connection arm 22 extending from a notch edge of the coil receiving slot 21 in a lateral direction, and the coil housing 2 is connected to the support arm 12 of the reaction housing 1 through the connection arm 22, so that the reaction housing 1 is connected to the coil housing 2, thereby reducing the bearing force of the first dielectric plate 4.

In another embodiment of the present utility model, the coil-receiving slot 21 extends into the reaction chamber 11 to shorten the distance between the coil assembly 33 and the plasma gas, so as to improve the ionization effect of the coil assembly 33 on the plasma gas, specifically referring to fig. 3, the reaction housing 1 includes a support arm 12 bent inwards from the opening of the reaction chamber 11 in a transverse direction, one side of the coil housing 2 facing away from the coil-receiving slot 21 is protruded outwards in a transverse direction to form a connecting arm 22, the coil housing 2 is connected to the support arm 12 of the reaction housing 1 through the connecting arm 22, and the coil-receiving slot 21 extends into the reaction chamber 11 at least partially, so that the reaction chamber 11 can be in a semi-surrounding or full-surrounding state with respect to the coil-receiving slot 21, thereby reducing the distance between the coil assembly 33 and the plasma gas, and improving the ionization effect of the coil assembly 33 on the plasma gas.

Further, there may be various connection manners of the reaction housing 1 and the coil housing 2, and the reaction housing 1 may be adhered to the coil housing 2, or may be connected to the coil housing 2 by magnetic attraction, which is not limited in the present utility model, and in order to ensure the connection stability of the reaction housing 1 and the coil housing 2, referring to fig. 2, in an embodiment of the present utility model, the coil housing 2 is screwed to the reaction housing 1 through a flange 8.

It will be appreciated that in order to ionize the plasma gas in the reaction chamber 11, the coil assembly 3 is also required to be placed in a vacuum environment, and the ionization effect of the coil assembly 3 is different, and the vacuum degree of the required vacuum environment is also different, so in an embodiment of the present utility model, the plasma processing apparatus further includes a second dielectric plate 5, the second dielectric plate 5 is disposed in the coil-receiving groove 21, the second dielectric plate 5 and the first dielectric plate 4 enclose a sealed space together, the coil assembly 33 is disposed in the sealed space, and the sealed space is disposed in a vacuum manner, so that the coil assembly 3 is provided with a vacuum environment for ionizing the plasma gas, further, in another embodiment of the present utility model, the sealed space is connected to a vacuum pump through a pipeline, and an operator can pump the sealed space to a vacuum state through the vacuum pump, and at the same time, the operator can adjust the vacuum degree of the sealed space to provide different environments for the coil assembly 3.

The bottom of the coil accommodating groove 21 is provided with a first wire passing hole 211, the second dielectric plate 5 is provided with a second wire passing hole 51 corresponding to the first wire passing hole 211, the coil assembly 33 comprises two coils 31, the coils 31 are arranged at intervals so as to ensure that no overlapping area between the coils 31 can not affect each other, the coils 31 comprise an electric connection part 311 extending towards the opening direction deviating from the coil accommodating groove 21, and the electric connection part 311 sequentially passes through the first wire passing hole 211 and the second wire passing hole 51 so as to be connected with a power supply outside the coil accommodating groove 21. It should be noted that the power source may be a dc power source, a radio frequency power source, or a microwave power source, which is not limited in this aspect of the utility model, and an operator may select different power sources according to his own needs, so that each coil 31 may radiate different energy outwards.

In order to prevent external air from entering the coil accommodating groove 21 from the first wire through hole 211 and the second wire through hole 51, and further destroy the vacuum environment of the coil accommodating groove 21, in still another embodiment of the present utility model, the electrical connection portion 311 is in sealing connection with the first wire through hole 211 and the second wire through hole 51, and there are various ways in which the electrical connection portion 311 is in sealing connection with the first wire through hole 211 and the second wire through hole 51, and the electrical connection portion 311 may be sealed by a sealing ring and the first wire through hole 211 and the second wire through hole 51, or may be sealed by an interference fit with the first wire through hole 211 and the second wire through hole 51, which is not limited by the present utility model.

The materials of the first dielectric plate 4 and the second dielectric plate 5 should include all insulating materials such as rubber and quartz which can provide a sealed environment and do not react electrochemically, and the latter is preferable in the present utility model, specifically, in an embodiment of the present utility model, the first dielectric plate 4 and the second dielectric plate 5 are made of quartz which is stable and insulating in chemical property, so as to avoid the reaction of plasma gas with the first dielectric plate 4 and the second dielectric plate 5, and cause corrosion of the first dielectric plate 4 and the second dielectric plate 5 and loss of plasma gas, and quartz can isolate the electric circuit of the coil assembly 3 from conducting to the coil housing, thereby preventing electric leakage. Further, quartz also has the advantages of high temperature resistance, good surface finish and high dielectric constant to improve the ionization effect of the coil assembly 3 on plasma.

In order to improve the ionization effect of the coil assembly 33 on the plasma gas, please refer to fig. 4, in an embodiment of the present utility model, the second dielectric plate 5 includes a horizontal segment 52 disposed at the bottom of the coil accommodating groove 21, and a vertical segment 53 extending from a peripheral end of the horizontal segment 52 to an opening of the coil accommodating groove 21, where the horizontal segment 52 and the vertical segment 53 may be separately disposed or integrally formed, which is not limited in the present utility model, and in an embodiment of the present utility model, the horizontal segment 52 and the vertical segment 53 are integrally disposed in view of manufacturing cost. Further, in another embodiment of the present utility model, the vertical section 53 and the side wall surface of the coil-receiving slot 21 together define a mounting slot, and the plasma processing apparatus includes a first magnetic structure 6, where the first magnetic structure 6 is disposed in the mounting slot, so as to enhance the plasma energy distribution in the circumferential direction of the coil assembly 33, and further enhance the ionization effect of the coil assembly 33 on the plasma gas. It should be noted that, to enhance the effect of the first magnetic structure 6, the first magnetic structure 6 may also extend into the reaction chamber 11 along with the coil accommodating groove 21, specifically, please refer to fig. 5, and in another embodiment of the present utility model, the first magnetic structure 6 extends into the reaction chamber 11 along with the coil accommodating groove 21, so as to further enhance the ionization effect of the first magnetic structure 6 on the plasma gas.

It should be noted that, the first magnetic structure 6 may be a permanent magnet or an electromagnet, in an embodiment of the present utility model, the first magnetic structure 6 is set as an electromagnet, a power source is externally connected to the electromagnet, and an adjusting switch is disposed between the electromagnet and the power source, so that an operator can control the on-off and the size of the electromagnet according to the needs of the operator.

In order to further enhance the distribution of the magnetic field of the plasma generated by the coil assembly 33, referring to fig. 6 and 7, in an embodiment of the present utility model, the plasma processing apparatus further includes a second magnetic structure 7, where the second magnetic structure 7 is disposed on a side of the reaction housing 1 away from the reaction chamber 11, so as to form a new magnetic field in the reaction chamber 11, thereby further improving the ionization effect of the plasma in the reaction chamber 11; further, in this embodiment, the coil receiving groove 21 may extend into the reaction chamber 11 as shown in fig. 7, or may not extend into the reaction chamber 11 as shown in fig. 6, which is not limited in the present utility model.

The second magnetic structure 7 should include any object that can generate magnetic induction, for example, in one embodiment of the present utility model, the second magnetic structure 7 includes a permanent magnet, and the permanent magnet provides a magnetic field for the reaction chamber to increase the magnetic field strength in the reaction chamber, and the second magnetic structure 7 may also be an electromagnet with adjustable magnetic size and a spiral coil, specifically, in another embodiment of the present utility model, the second magnetic structure 7 includes a spiral coil, the spiral coil is connected with a power supply, an adjusting switch is disposed between the spiral coil and the power supply, and an operator can adjust the on-off of the spiral coil current and generate the size of the spiral magnetic field according to the needs of the operator. In an embodiment of the present utility model, the second magnetic structure 7 includes an electromagnet, the electromagnet is connected with a power supply, and an adjusting switch is disposed between the electromagnet and the power supply, so that an operator can adjust the current of the electromagnet according to the needs of the operator to control the magnetic field generated by the electromagnet.

When the second magnetic structure 7 is a spiral coil and an electromagnet, the power supply of the spiral coil and the electromagnet is not limited, and the power supply can be a direct current power supply, a radio frequency power supply or a microwave power supply.

When the second magnetic structure 7 is a permanent magnet, the permanent magnet is not limited in the arrangement of the permanent magnet on the reaction shell, and the permanent magnet is distributed on the reaction shell at intervals in a dispersed manner, or can be continuously arranged on the reaction shell in a multi-circle surrounding state, or can be arranged on the reaction shell in a spiral ascending state.

The utility model also provides a film forming device, which comprises a plasma processing device, wherein the specific structure of the plasma processing device refers to the embodiment, and the film forming device adopts all the technical schemes of all the embodiments, so that the film forming device at least has all the beneficial effects brought by the technical schemes of the embodiments, and the detailed description is omitted.

The foregoing description is only of the preferred embodiments of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structural changes made by the description of the present utility model and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the utility model.

Claims

1. A plasma processing apparatus, comprising:

a reaction housing forming a reaction chamber having an opening;

2. The plasma processing apparatus of claim 1 wherein said reaction housing comprises a support arm extending laterally inward from an opening of said reaction chamber;

3. The plasma processing apparatus according to claim 1, wherein the reaction housing comprises a support arm bent inward in a lateral direction from an opening of the reaction chamber;

4. The plasma processing apparatus according to claim 1, further comprising a second dielectric plate disposed within the coil accommodation groove;

5. The plasma processing apparatus according to claim 4, wherein a first wire passing hole is provided at a bottom of the coil accommodating groove;

6. The plasma processing apparatus of claim 5 wherein the electrical connection is in sealed connection with the first and second via.

7. The plasma processing apparatus according to claim 4, wherein a material of the first dielectric plate and the second dielectric plate is quartz.

8. The plasma processing apparatus according to claim 4, wherein the second dielectric plate includes a horizontal section provided at a bottom of the coil accommodating groove, and a vertical section extending from a peripheral side end of the horizontal section toward an opening of the coil accommodating groove, the vertical section and a side wall surface of the coil accommodating groove enclosing a mounting groove together;

9. The plasma processing apparatus of claim 1 further comprising a second magnetic structure disposed on a side of the reaction housing facing away from the reaction chamber.

10. A film forming apparatus comprising the plasma processing apparatus according to any one of claims 1 to 9.