CN219038821U

CN219038821U - Reflectivity optical measurement device and semiconductor film forming equipment

Info

Publication number: CN219038821U
Application number: CN202223385933.6U
Authority: CN
Inventors: 马法君; 吴怡; 刘明军; 刘雷; 郑冬; 周慧娟
Original assignee: Chuyun Technology Shaoxing Co ltd
Current assignee: Lanhe Technology Shaoxing Co ltd
Priority date: 2022-12-16
Filing date: 2022-12-16
Publication date: 2023-05-16
Anticipated expiration: 2032-12-16

Abstract

The utility model discloses a reflectivity optical measurement device and a semiconductor film forming device, wherein the device comprises: a surface light source, an optical assembly, and a light detection module; the surface light source is used for emitting incident detection light; the optical component is positioned between the surface light source and the optical window and is used for enabling incident detection light to pass through the optical window and then be projected onto a detected surface of an object to be detected, and enabling emergent detection light which is reflected by the detected surface and is emitted through the optical window to be received by the light detection module; the surface light source forms an image of the surface light source through the optical assembly, and the size/area of the image of the surface light source is larger than or equal to the size/area of the optical window. According to the utility model, the surface light source emits non-parallel light as incident detection light, so that effective measurement of reflectivity can be provided, the light path adjustment can be simpler, and the measuring device can be free from excessive limitation of the mounting position, thereby achieving the purposes of simplifying the light path and increasing the reliability, being capable of being used for measuring epitaxial wafers with larger warpage and widening application scenes.

Description

Reflectivity optical measurement device and semiconductor film forming equipment

Technical Field

The utility model relates to the technical field of semiconductor device manufacturing, in particular to a reflectivity optical measurement device and a semiconductor film forming device.

Background

In the manufacturing process of semiconductor devices, the growth temperature of epitaxial wafers is a key parameter for controlling the growth of thin films. Because the reaction conditions of the film growth reaction chamber are strict, the growth temperature of the epitaxial wafer must be measured by a non-contact temperature measurement method.

The non-contact temperature measurement method applied in the prior art adopts a high temperature measurement method corrected by thermal emissivity, and calculates the temperature of the surface of the epitaxial wafer by measuring the radiant light of a certain wave band and the emissivity of the surface of the corresponding epitaxial wafer. It is therefore necessary to obtain information on the emissivity by measuring the reflectivity by means of an optical measurement system.

Typically, an optical window is provided at the top of the reaction chamber, through which the optical measurement system emits a probe beam to the epitaxial wafer. The reflected light beam formed by the reflected light beam on the surface of the epitaxial wafer is detected by a detector, so that the reflectivity is obtained. The calculation control unit can calculate the reflectivity R of the epitaxial wafer surface at the position where the reflection occurs according to the detected intensity of the reflected light beam and the known intensity of the incident light, and calculate the emissivity epsilon of the epitaxial wafer according to an epsilon=1-R formula, so that the temperature of the epitaxial wafer surface can be calculated according to the emissivity epsilon of the epitaxial wafer surface.

The position and size of the optical window are severely limited due to the special configuration of the epitaxial reaction chamber. However, the parallel light beam (such as a narrower parallel light beam emitted by a laser) used in the conventional optical measurement system needs to pass through a complex optical path to make the parallel collimated laser converge into a narrower incident laser beam, then pass through an optical window on the top of the reaction chamber (i.e. the size of the incident light beam at the optical window needs to be smaller than that of the optical window), vertically cast onto the epitaxial wafer, and reflect on the surface of the epitaxial wafer.

In addition, the conventional optical measurement system is limited by the installation position of the light source (for example, a spectroscope is required), so that good matching between the light source and the optical window is still difficult to achieve, the measurement system is difficult to install in the debugging process, and subsequent maintenance is also complicated. Once the mounting is shifted, the reflected light signal cannot be detected, so that the stability of temperature measurement is affected, and the growth temperature measurement of the epitaxial wafer cannot be guaranteed to be consistent and accurate.

Meanwhile, during the film growth process, the epitaxial wafer is warped due to the action of stress, and partial reflected light beams are deflected in angle and cannot exit through the optical window, so that the detector cannot receive the light beams. When the warping and the inclination are obvious, the problem that no optical signal is reflected into the detector can still occur due to the fact that the laser emits parallel light even if the emitting surface of the laser is infinitely large, namely, when parallel light detection is adopted, the problem that the reflectivity is difficult to accurately obtain through measurement easily occurs due to the influence of factors such as the surface state of an object to be detected and the like.

Accordingly, there is a need to provide a new optical measurement technique for reflectivity to solve the above-mentioned problems in the prior art.

Disclosure of Invention

The utility model aims to overcome the defects in the prior art and provide a reflectivity optical measurement device and a semiconductor film forming device.

In order to achieve the above purpose, the technical scheme of the utility model is as follows:

the present utility model provides a reflectance optical measurement device including: the surface light source, the optical component and the light detection module are arranged above the optical window;

the surface light source is used for emitting incident detection light, and the incident detection light is non-parallel light;

the optical assembly is positioned between the surface light source and the optical window, and is used for enabling the incident detection light to pass through the optical window and then be projected onto a tested surface of an object to be tested, and enabling outgoing detection light reflected by the tested surface and emitted through the optical window to be received by the light detection module;

the surface light source forms an image of the surface light source through the optical component, and the size/area of the image of the surface light source is larger than or equal to the size/area of the optical window.

Further, an image of the surface light source is located between the optical window and the optical assembly, and the image of the surface light source constitutes a light emitting surface of the incident probe light.

Further, the intensity distribution of the incident detection light at each position on the light emitting surface in the normal solid angle of the light emitting surface is uniform, the intensity distribution at each position on the light emitting surface in the solid angle is uniform, and half of the opening angle of the solid angle in any direction is defined as beta, wherein beta is more than 0.

Further, the beta is larger than or equal to a half vertex angle alpha of a cone formed between the projection of the center of the optical window on the plane of the object to be measured and the optical window.

Further, the beta/alpha is in the range of 1 to 2.

Further, the surface light source image is located at the position of the optical window.

Further, the dimension a of the surface light source image in the horizontal direction and the dimension B of the optical window in the horizontal direction satisfy:

A/B≥H/h

wherein H is the distance from the surface light source image to the surface to be measured, and H is the distance from the optical window to the surface to be measured.

Further, the optical assembly includes a lens for transmitting and condensing the incident probe light from the surface light source, and a beam splitter for transmitting/reflecting the incident probe light toward the optical window and correspondingly reflecting/transmitting the outgoing probe light reflected by the object to be measured and emitted through the optical window toward the optical detection module.

Further, the size C of the surface light source and the size B of the optical window satisfy:

C/B≥f/(v-f)

wherein f is the focal length of the lens, and v is the distance from the surface light source image to the lens.

Further, the surface light source includes an LED surface light source, or the surface light source is formed of a point light source or laser-irradiated frosted glass, or the surface light source includes a light source having lambertian radiator properties.

The utility model also provides a semiconductor film forming device, which comprises any one of the reflectivity optical measuring devices, wherein the reflectivity optical measuring devices are arranged outside a reaction cavity of the semiconductor film forming device, a wafer carrying disc is arranged in the reaction cavity, a plurality of wafers are carried on the wafer carrying disc, and an optical window is arranged on the reaction cavity; the reflectivity optical measurement device is used for projecting incident detection light to the surface of the wafer through the optical window, and enabling outgoing detection light reflected by the surface of the wafer and emitted through the optical window to be received by the optical detection module, so that the reflectivity of the wafer is obtained.

Compared with the prior art that parallel collimated light beams (such as laser) are converged into incident light beams through complex optical light paths and then vertically projected onto an object to be measured from the center of an optical window and reflected on the surface of the object to be measured, the reflectivity optical measurement device provided by the utility model adopts the surface light source with a certain light emitting surface to emit non-parallel light as incident detection light, so that the incident detection light emitted by the surface light source still enters the optical window and is reflected by the object to be measured and then is emitted by the optical window to be detected by the optical detection module no matter whether the optical measurement device is installed between the optical measurement device and the optical window or the object to be measured is warped or inclined, the light path adjustment is simpler, the measurement device can not be limited by excessive installation positions, the purposes of simplifying the light paths and increasing the reliability are achieved, and the reflectivity optical measurement device is particularly suitable for measuring the object to be measured with large warpage. Further, by matching the size of the light emitting surface of the surface light source with the size of the optical window and designing the solid angle range in which the light emitting intensity is uniformly distributed and uniform, it is possible to further ensure that the measurement of the reflectance and the temperature measurement based thereon are effectively usable. In addition, the setting position of the surface light source can meet various installation requirements, and can be adjusted according to the field equipment field requirements, so that the application scene of the surface light source is widened.

Drawings

FIG. 1 is a schematic diagram of a reflectance optical measurement device according to a preferred embodiment of the present utility model;

FIG. 2 is a schematic diagram of an optical path for laser imaging according to the prior art;

fig. 3 is a schematic view of an optical path of a planar light source imaging according to the present utility model.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

The reflectivity optical measurement device comprises a surface light source arranged above an optical window, an optical assembly and a light detection module. The surface light source is used for emitting incident detection light, and the incident detection light is non-parallel light; the optical component is positioned between the surface light source and the optical window, and is used for enabling at least part of incident detection light to be projected onto a detected surface of an object to be detected through the optical window after passing through the optical component, and enabling emergent detection light reflected by the detected surface and emitted through the optical window to be received by the light detection module. And calculating the reflectivity of the object to be detected according to the intensity of the incident detection light and the intensity of the emergent detection light.

In some embodiments, the size of the image (light emitting surface) of the surface light source meets certain requirements, so that within a given size range of the optical window, it is ensured that incident probe light can enter the optical window and outgoing probe light can exit the optical window. Defining H as the distance from the surface light source image to the measured surface, where H is the distance from the optical window to the measured surface, and the dimension a of the surface light source image in the horizontal direction and the dimension B of the optical window in the horizontal direction satisfy: A/B is more than or equal to H/H. Preferably, H/h.ltoreq.A/B.ltoreq.2H/H. By matching the image size of the surface light source with the size of the optical window, the measurement of the reflectance can be ensured.

In some embodiments, if the object to be tested is warped, the incident probe light may enter the optical window, and the outgoing probe light may exit the optical window, where the size of the optical window should meet a certain requirement. And representing the warpage by using the inclination gamma of the object to be measured (namely the included angle of the tangent line where the measured point is positioned relative to the horizontal plane), wherein the half vertex angle alpha is more than or equal to 2 gamma. The design size of the optical window in a certain warping range can be obtained through the half-top angle alpha and the distance h between the optical window and the plane of the object to be measured. In the size range of the optical window, the reflectivity measurement in the condition that the gradient of the object to be measured is less than or equal to gamma can be satisfied.

In some embodiments, the intensity distribution of the incident probe light emitted at each of the light emitting surfaces from which the incident probe light is emitted is made uniform within a certain solid angle normal to the light emitting surfaces, preferably, the intensity non-uniformity (the ratio of the standard deviation of the intensity value to the average value of the intensity) is 2% or less, and the intensity distribution thereof within the solid angle is uniform throughout, thereby further ensuring that the obtained reflectance is usable effectively without affecting the stability of measurement. On the other hand, the reflectance fluctuates depending on the intensity of the incident probe light, and the actual reflectance cannot be expressed. Specifically, half the angle at which the solid angle opens in any direction is defined as β, which is > 0. Further, the beta is larger than or equal to a half vertex angle alpha of a cone formed between the projection of the center of the optical window on the plane of the object to be measured and the optical window. Preferably, the β/α range is 1 to 2.

According to the reflectivity optical measurement device provided by the utility model, the surface light source with a certain light emitting surface is adopted to emit non-parallel light as incident detection light, so that no matter whether the optical measurement device is offset from the optical window on the reaction chamber or the object to be measured is warped or inclined, although the light vertically incident on the object to be measured from the center of the optical window cannot be detected, the incident detection light emitted from other positions or other angles on the light emitting surface can still enter the optical window and be reflected by the object to be measured and then emitted out of the optical window to be detected by the optical detection module, the optical path adjustment can be simplified, the measurement device can not be limited by excessive mounting positions, the purposes of simplifying the optical path and increasing the reliability are achieved, and the reflectivity optical measurement device is particularly suitable for measuring the object to be measured with large warping. The size of the light emitting surface of the light emitting module and the uniform solid angle range of the light emitting intensity are designed, so that the measurement of reflectivity and the measurement based on the reflectivity can be further ensured to be effectively used.

The following describes the embodiments of the present utility model in further detail with reference to the accompanying drawings.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an optical reflectivity measuring device according to a preferred embodiment of the utility model. As shown in fig. 1, the optical measuring device for reflectivity according to the present utility model includes a surface light source 12,

optical components

14 and 16, and a light detection module 13 disposed above an optical window 11.

Wherein the optical window 11 is located above the object to be measured 10. The surface light source 12 is configured to emit incident probe light, which is non-parallel light. The

optical components

14 and 16 are located between the surface light source 12 and the optical window 11, and are used for making incident detection light pass through the

optical components

14 and 16, at least part of the incident detection light is projected onto the tested surface of the object 10 to be tested through the optical window 11, and making the emergent detection light reflected by the tested surface and emitted through the optical window 11 be received by the light detection module 13.

Please refer to fig. 1. In some embodiments, the surface light source 12 may include a light source having lambertian emitter properties such that the incident probe light emitted at each location on the light emitting surface has a uniform and consistent intensity distribution over a solid angle normal to the light emitting surface.

In some embodiments, the

optical assemblies

14, 16 may include a lens 14 and a beam splitter 16. The beam splitter 16 may be disposed at the intersection of the incident probe light and the outgoing probe light. The lens 14 may be disposed between the surface light source 12 and the beam splitter 16.

The beam splitter 16 is used for transmitting incident detection light from the surface light source 12 toward the optical window 11 and the object 10 under the optical window, and reflecting emergent detection light reflected by the object 10 through the optical window 11 toward the light detection module 13. The lens 14 is used to transmit and condense the detection light from the surface light source 12, and form a real image 15 of the surface light source 12 at a position between the optical window 11 and the

optical components

14, 16 after transmitting through the beam splitter 16.

Alternatively, the beam splitter 16 may be configured to reflect the incident probe light from the surface light source 12 toward the optical window 11 and the object 10 under the optical window, and transmit the outgoing probe light reflected by the object 10 through the optical window 11 toward the light detection module 13 accordingly. The lens 14 is used to transmit and condense the detection light from the surface light source 12, and form a real image 15 of the surface light source 12 at a position between the optical window 11 and the

optical components

14, 16 after being reflected by the beam splitter 16.

Preferably, the light detection module 13 and the optical window 11 are arranged in a center-aligned manner.

In the present embodiment, the real image 15 of the surface light source 12 constitutes a light emitting surface on which the detection light is incident.

In some embodiments, the light detection module 13 may be disposed in the direction of either the transmitted or reflected light beam of the beam splitter 16. When the light detection module 13 is disposed in the direction of the transmitted light beam of the beam splitter 16, the light detection module 13 and the optical window 11 are disposed in a center-aligned manner. When the light detection module 13 is disposed in the direction of the reflected light beam of the beam splitter 16, the light detection module 13 is disposed in a center-aligned manner with respect to the image formed by the beam splitter 16 and the optical window 11.

In this embodiment, the formed real image 15 of the surface light source 12 is used to replace the surface light source 12 as the light emitting surface of the detection light source in the equivalent sense, and the width a of the real image 15 of the surface light source 12 in the horizontal direction and the width B of the optical window 11 in the horizontal direction meet certain conditions, so that whether the mounting is offset or the epitaxial wafer is warped, it is ensured that the incident detection light energy enters the optical window 11 and is reflected by the object to be detected 10, and then exits through the optical window 11 to be detected by the light detection module 13.

Please refer to fig. 1. For example, a first intersection point formed by connecting the center of the light detection module 13 and the center of the optical window 11 on the surface to be measured is a first endpoint o (i.e. the projection of the center of the optical window 11 on the plane of the object 10 to be measured), two side edges of the optical window 11 are a second endpoint p and a third endpoint q, a straight line is formed between the first endpoint o and the second endpoint p and extends to the real image 15 of the surface light source 12 to form a second intersection point s, meanwhile, a straight line is formed between the first endpoint o and the third endpoint q and extends to the real image 15 of the surface light source 12 to form a third intersection point t, an isosceles triangle is formed between the endpoint o, the endpoint s and the endpoint t, a straight line is formed between the endpoint o and the endpoint s, an included angle formed between the straight line and the center connection is the half vertex angle alpha of a cone formed between the projection of the center of the optical window 11 on the plane of the object 10 to be measured and the optical window 11, and H is the distance from the real image 15 of the surface light source 12 to the plane of the object 10 to be measured, and H is the distance from the optical window 11 to the plane of the object 10 to be measured.

In this state, the width a of the real image 15 of the surface light source 12 in the horizontal direction is equal to or greater than the distance M between the second intersection s and the third intersection t, and the distance m=2h×tgα. The width B of the optical window 11 in the horizontal direction is the distance between the end point p and the end point q, and the width b=2h×tgα, that is, M/b=h/H. As the width A is larger than or equal to the distance M, the A/B is larger than or equal to H/H. In this way, by matching the size of the real image 15 (i.e., the light emitting surface) of the surface light source 12 with the size of the optical window 11, the measurement of the reflectance can be ensured.

In some embodiments, the ratio between the width a of the real image 15 of the surface light source 12 in the horizontal direction and the distance M between the second intersection s and the third intersection t may be 1 to 2 times. Namely H/H is less than or equal to A/B is less than or equal to 2H/H.

Please refer to fig. 1. In some embodiments, the following condition may be satisfied between the width C of the actual surface light source 12 in the vertical direction and the width B of the optical window 11 in the horizontal direction:

according to the lens imaging formula:

(1/u)+(1/v)＝1/f，

the method can be calculated as follows:

u/v＝f/(v-f)，

the size of the real image 15 of the surface light source 12 is equal to or larger than the size of the optical window 11, so that the width C of the surface light source 12 in the vertical direction can be obtained to satisfy:

C/B≥f/(v-f)；

where u is the object distance, i.e. the distance between the surface light source 12 and the lens 14, v is the image distance, i.e. the optical path distance between the real image 15 of the surface light source 12 and the lens 14, and f is the focal length of the lens 14.

In some embodiments, the lens 14 transmits and condenses the incident probe light from the surface light source 12, so that the real image 15 of the surface light source 12 is formed at the position of the aperture of the optical window 11. At this time, the real image 15 of the surface light source 12 is actually formed instead of the surface light source 12 as the light emitting surface of the detection light source in the equivalent sense. So that the mounting height of the surface light source 12 can be adjusted by using a lens provided at a proper position.

Please refer to fig. 1. In some embodiments, the intensity distribution of the incident probe light emitted at each location on the real image 15 (light emitting surface) of the surface light source 12 is uniform and consistent within a certain solid angle normal to the surface of the real image 15, to further ensure that the obtained reflectivity is usable effectively without affecting the stability of the measurement. And defining half of the opening angle of the solid angle in any direction as beta, wherein beta is larger than or equal to the half vertex angle alpha of a cone formed between the projection of the center of the optical window 11 on the plane of the object to be detected and the optical window 11.

In some embodiments, the ratio between β and half-apex angle α may range from 1 to 2.

By arranging the lens 14, the formed real image 15 of the surface light source 12 is just positioned at the position of the aperture of the optical window 11, so that the plane of the optical window 11 is used as a new light emitting surface formed by the real image 15 of the surface light source 12, and the incident light rays from the new light emitting surface have divergence angles larger than the included angle alpha, thereby improving the utilization rate of the incident light rays. At this time, u+v=l, where L is the installation height of the surface light source 12 above the optical window 11. However, in the case of no lens, the surface light source 12 cannot be directly mounted at a position just at the aperture of the optical window 11.

The surface light source 12 is imaged by the lens 14, and the formed real image 15 of the surface light source 12 is used for replacing the surface light source 12 as the light emitting surface of the detection light source in the equivalent sense, so that the light emitting surface is closer to the measured surface, and therefore, the use of the large-size surface light source 12 is not required, the cost can be saved, and the installation space can be saved. And by selecting an appropriate lens 14, the installation height of the surface light source 12 can be adjusted, and the installation position of the surface light source 12 can be made to satisfy various installation requirements.

By adding the beam splitter 16, the surface light source 12 can be mounted at a side position (with respect to the orientation of the light detection module 13 mounted above); and, the surface light source 12 and the light detection module 13 may also be located at a position other than one plane. Thus further expanding the use scenarios of the reflectivity optical measurement device.

In some embodiments, the surface light source 12 may also include an LED surface light source 12.

In some embodiments, the surface light source 12 may also be formed of a point light source or laser irradiated frosted glass.

The utility model provides a semiconductor film forming device, which comprises the optical reflectivity measuring device. The semiconductor film forming apparatus includes a vapor phase reaction device, and may be, for example, a metal organic chemical vapor deposition device (MOCVD), a hydride vapor phase epitaxy device (HVPE), a plasma enhanced chemical vapor deposition device, a physical vapor deposition device (PVD), or the like. The semiconductor film forming equipment comprises a reaction cavity, wherein a wafer carrying disc is arranged in the reaction cavity, a plurality of wafers are carried on the wafer carrying disc, the wafer carrying disc is arranged on a supporting base, the wafer carrying disc is driven to rotate on the supporting base to drive the wafers placed on the wafer carrying disc to synchronously rotate, and the semiconductor film forming equipment can be used for carrying out high-temperature process treatment on the wafers and the like. The reaction chamber is provided with an optical window, the reflectivity optical measurement device is arranged outside the reaction chamber of the semiconductor film forming equipment and is used for carrying out on-line measurement on reflectivity of a wafer placed in the reaction chamber through the optical window, so that emissivity information can be obtained, and therefore the temperature of the wafer can be calculated according to the Planckian equation, and the semiconductor film forming equipment can control the temperature accordingly.

By adopting the reflectivity optical measurement device, even if the wafer is greatly warped due to the action of stress in the film growth process, incident detection light can still enter the optical window and be detected by the optical detection module through the outgoing of the optical window after being reflected by the wafer, so that the reflectivity measurement and the temperature measurement based on the reflectivity can be effectively used.

The working principle of the present utility model will be described in detail with reference to the accompanying drawings.

Please refer to fig. 2. In the prior art, a laser is used as a detection light source. When an object to be measured such as a wafer is warped during the process growth, since the laser emits parallel light, no optical signal enters the detector even if the plane of the laser is infinite (i.e., the virtual image of the laser is formed to be infinite).

Please refer to fig. 3. In the present utility model, lambertian emitters (e.g., LED surface light sources 12, etc., which emit light beams having uniform and consistent intensity distribution throughout a certain solid angle) are used as detection light sources. Since the light emitted from the surface light source 12 is non-parallel light having a certain divergence angle, even if the wafer is inclined, the detection light incident in the vertical direction is deflected at an angle due to the inclination of the wafer, so that the detection light cannot be emitted from the optical window 11 and is detected, but the detection light incident at other angles is emitted from the optical window 11 and is detected by the detector.

In summary, the utility model uses the surface light source 12 with a certain light emitting surface to emit non-parallel light as incident detection light, and matches the relation size between the light emitting surface of the detection light and the optical window 11, so that the incident detection light beam can completely cover the optical window 11, no matter the optical window 11 is arranged between the optical measuring device and the optical window 11 on the reaction chamber, or the object 10 to be measured is warped or inclined, the incident detection light emitted from the light emitting surface still enters the optical window 11 and is reflected by the object 10 to be measured and then is emitted from the optical window 11 to be detected by the light detection module 13, thus the light path adjustment is simpler, and the detection light beam can not be limited by the excessive installation position, thereby achieving the purposes of simplifying the light path and increasing the reliability. And by designing a solid angle range in which the emission intensity of the probe light is uniformly distributed and uniform, it is possible to further ensure that the obtained reflectance can be effectively used. The utility model can be suitable for measuring the reflectivity and the temperature of the epitaxial wafer, especially for the epitaxial wafer inclined due to warping, and at least part of the detection light in the detection light beam can still be emitted through the optical window 11 and effectively received by the light detection module 13. The device of the utility model can realize high integration, can meet various detection condition requirements by using the surface light source 12 with smaller size, and can enable the setting position of the surface light source 12 to meet various installation requirements, thereby widening the application scene of the utility model.

While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A reflectance optical measurement device comprising: the surface light source, the optical component and the light detection module are arranged above the optical window;

2. The reflectance optical measurement device according to claim 1, wherein an image of the surface light source is located between the optical window and the optical assembly, the image of the surface light source constituting a light emitting surface of the incident probe light.

3. The reflectance optical measurement apparatus according to claim 2, wherein an intensity distribution of the incident probe light at each place on the light emitting face within a solid angle normal to the light emitting face is uniform, and the intensity distribution at each place on the light emitting face within the solid angle is uniform, defining a half of an angle at which the solid angle opens in any direction as β, the β > 0.

4. A reflectivity optical measurement mechanism as set forth in claim 3 wherein β is equal to or greater than the half-apex angle α of a cone formed between the projection of the center of the optical window onto the plane of the object under test and the optical window.

5. The optical reflectance measurement device according to claim 4, wherein the β/α range is 1 to 2.

6. The optical reflectance measuring apparatus according to claim 2, wherein the image of the surface light source is located at the position of the optical window.

7. The reflectance optical measurement device according to claim 1, wherein a dimension a of the image of the surface light source in the horizontal direction and a dimension B of the optical window in the horizontal direction satisfy:

A/B≥H/h

8. The reflectance optical measurement device according to claim 1, wherein the optical component includes a lens for transmitting and condensing the incident probe light from the surface light source, and a spectroscope for transmitting/reflecting the incident probe light toward the optical window and correspondingly reflecting/transmitting the outgoing probe light reflected by the object to be measured and emitted through the optical window toward the light detection module.

9. The optical reflectance measuring device according to claim 8, wherein a dimension C of the surface light source and a dimension B of the optical window satisfy:

C/B≥f/(v-f)

10. The reflectance optical measurement device according to claim 1, wherein the surface light source comprises an LED surface light source, or the surface light source is formed of a point light source or laser-irradiated frosted glass, or the surface light source comprises a light source having lambertian radiator properties.

11. A semiconductor film forming apparatus, characterized by comprising the optical reflectivity measuring device according to any one of claims 1 to 10, wherein the optical reflectivity measuring device is arranged outside a reaction chamber of the semiconductor film forming apparatus, a wafer carrying disc is arranged in the reaction chamber, a plurality of wafers are carried on the wafer carrying disc, and an optical window is arranged on the reaction chamber; the reflectivity optical measurement device is used for projecting incident detection light to the surface of the wafer through the optical window, and enabling outgoing detection light reflected by the surface of the wafer and emitted through the optical window to be received by the optical detection module, so that the reflectivity of the wafer is obtained.