CN219032356U - Semiconductor process chamber - Google Patents
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- CN219032356U CN219032356U CN202223505118.9U CN202223505118U CN219032356U CN 219032356 U CN219032356 U CN 219032356U CN 202223505118 U CN202223505118 U CN 202223505118U CN 219032356 U CN219032356 U CN 219032356U
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本实用新型提供了一种半导体工艺腔,包括:腔室、喷淋板、挡板模组和底座;所述腔室用于容纳所述喷淋板、所述挡板模组和所述底座;所述底座用于承载晶圆;所述喷淋板与反应气体源连通,用于向所述晶圆喷淋反应气体;所述挡板模组设于所述喷淋板与所述晶圆之间,用于阻挡反应气体流向所述晶圆的保护区域。该工艺腔用于在晶圆表面保护区域外沉积膜层或刻蚀膜层。
The utility model provides a semiconductor process chamber, comprising: a chamber, a spray plate, a baffle module and a base; the chamber is used to accommodate the spray plate, the baffle module and the base ; the base is used to carry the wafer; the spray plate is connected with the reaction gas source, and is used to spray the reaction gas to the wafer; the baffle module is arranged between the spray plate and the crystal Between the circles, it is used to block the reaction gas from flowing to the protected area of the wafer. The process chamber is used to deposit or etch a film layer outside the protected area of the wafer surface.
Description
技术领域technical field
本实用新型涉及半导体工艺领域,尤其涉及一种半导体工艺腔。The utility model relates to the field of semiconductor technology, in particular to a semiconductor technology chamber.
背景技术Background technique
常规互补型金属氧化物半导体(complementary metal oxide semiconductor,CMOS)成膜工艺是在工艺腔中一次成膜,在晶圆表面实现膜厚和材质一致的均匀薄膜,这在批量生产过程中是必要的。The conventional complementary metal oxide semiconductor (CMOS) film formation process is to form a film in the process chamber at one time, and realize a uniform film with consistent film thickness and material on the surface of the wafer, which is necessary in the mass production process .
目前,在多项目晶圆(Multi ProjectWafer,MPW)或在前期工艺与器件的开发过程中,需要通过调节不同层次的膜厚和材料,进行器件的性能调整和产品开发,需要进行大量的工艺分组实验,特别是对于12英寸晶圆工艺开发,晶圆的成本昂贵,工艺成本高。因此,亟需一种新型的半导体工艺腔以改善上述问题。At present, in the multi-project wafer (Multi Project Wafer, MPW) or in the early process and device development process, it is necessary to adjust the film thickness and materials at different levels to perform device performance adjustment and product development, requiring a large number of process groups For experiments, especially for 12-inch wafer process development, the cost of the wafer is expensive and the process cost is high. Therefore, there is an urgent need for a new type of semiconductor process chamber to improve the above problems.
实用新型内容Utility model content
本实用新型的目的在于提供一种半导体工艺腔,该工艺腔用于在晶圆表面保护区域外沉积膜层或刻蚀膜层。The purpose of the utility model is to provide a semiconductor process chamber, which is used for depositing or etching a film outside the wafer surface protection area.
第一方面,本实用新型提供一种半导体工艺腔,用于向晶圆表面沉积膜层或刻蚀膜层,包括:腔室、喷淋板、挡板模组和底座;所述腔室用于容纳所述喷淋板、所述挡板模组和所述底座;所述底座用于承载晶圆;所述喷淋板与反应气体源连通,用于向所述晶圆喷淋反应气体;所述挡板模组设于所述喷淋板与所述晶圆之间,用于阻挡反应气体流向所述晶圆的保护区域;所述保护区域的面积小于所述晶圆的面积。In the first aspect, the utility model provides a semiconductor process chamber, which is used to deposit a film layer or etch a film layer on the surface of a wafer, including: a chamber, a shower plate, a baffle module and a base; for accommodating the shower plate, the baffle module and the base; the base is used to carry the wafer; the shower plate communicates with the reaction gas source and is used to spray the reaction gas to the wafer The baffle module is arranged between the shower plate and the wafer, and is used to block the reaction gas from flowing to the protection area of the wafer; the area of the protection area is smaller than the area of the wafer.
本实用新型的装置有益效果为:本实用新型通过所述挡板模组设于所述喷淋板与所述晶圆之间,能够阻挡反应气体流向所述晶圆的保护区域;所述保护区域的面积小于所述晶圆的面积。本实用新型实现了遮挡晶圆的保护区域,防止保护区域与反应气体接触,便于多项目晶圆的开发,防止同一片多项目晶圆上的各项目工艺相互干扰,有利于提升成膜良率。The beneficial effect of the device of the utility model is that: the utility model is provided between the spray plate and the wafer through the baffle module, which can block the reaction gas from flowing to the protection area of the wafer; the protection The area of the region is smaller than the area of the wafer. The utility model realizes the shielding of the protection area of the wafer, prevents the protection area from contacting with the reaction gas, facilitates the development of multi-item wafers, prevents the mutual interference of each item process on the same multi-item wafer, and is conducive to improving the film formation yield .
可选的,所述挡板模组包括至少一个挡板单元;所述挡板单元呈扇形设置;多个所述挡板单元层叠设置,相邻的所述挡板单元之间活动连接。其有益效果在于,本申请通过设置的所述挡板单元呈扇形设置;多个所述挡板单元层叠设置,相邻的所述挡板单元之间转动连接。本申请能够通过转动挡板单元调节挡板模组的尺寸,以满足对应晶圆的不同保护区域的需求。Optionally, the baffle module includes at least one baffle unit; the baffle unit is arranged in a fan shape; a plurality of the baffle units are stacked, and the adjacent baffle units are movably connected. The beneficial effect is that the baffle units provided in the present application are fan-shaped; multiple baffle units are stacked, and adjacent baffle units are rotationally connected. In the present application, the size of the baffle module can be adjusted by rotating the baffle unit to meet the requirements of different protection areas of the corresponding wafer.
可选的,所述挡板模组靠近晶圆的一侧开设有出气孔;所述挡板模组的内侧设有空腔;所述空腔用于连通所述出气孔和惰性气体源,以使所述挡板模组向晶圆吹扫惰性气体。其有益效果在于,本申请通过所述空腔连通所述出气孔和惰性气体源,以使所述挡板单元向晶圆吹扫惰性气体,避免反应气体与晶圆的保护区域接触,有利于减少工艺步骤间的干扰,确保膜层的良率。Optionally, the side of the baffle module close to the wafer is provided with an air outlet; the inner side of the baffle module is provided with a cavity; the cavity is used to communicate with the air outlet and an inert gas source, so that the baffle module blows the inert gas to the wafer. Its beneficial effect is that the present application connects the air outlet and the inert gas source through the cavity, so that the baffle unit can purge the inert gas to the wafer, avoiding the contact of the reactive gas with the protected area of the wafer, which is beneficial to Reduce the interference between process steps and ensure the yield of the film layer.
可选的,所述腔室内设有轨道;所述轨道与所述挡板模组滑动连接,用于支撑所述挡板模组,以使挡板模组受力时能够沿所述轨道运动。Optionally, a track is provided in the chamber; the track is slidably connected to the baffle module, and is used to support the baffle module, so that the baffle module can move along the track when it is stressed .
可选的,所述挡板模组连接有驱动单元;所述驱动单元处于工作状态时,用于驱动所述挡板模组运动。Optionally, the baffle module is connected with a drive unit; when the drive unit is in a working state, it is used to drive the baffle module to move.
可选的,所述挡板模组在晶圆表面的投影面积最小时,所述挡板模组在晶圆表面的投影面积与一个所述挡板单元在晶圆表面的投影面积相同。Optionally, when the projected area of the baffle module on the wafer surface is the smallest, the projected area of the baffle module on the wafer surface is the same as the projected area of one baffle unit on the wafer surface.
可选的,相邻的所述挡板单元设有第一止挡部;所述第一止挡部用于限制相邻的所述挡板单元的相对转动角度。Optionally, the adjacent baffle units are provided with first stoppers; the first stoppers are used to limit the relative rotation angles of the adjacent baffle units.
可选的,位于挡板模组边缘处的所述挡板单元设有第二止挡部;第一边缘挡板单元和第二边缘挡板单元均连接有第二止挡部。当第一边缘挡板单元带动所述第二止挡部靠近第二边缘挡板单元时,所述第二止挡部用于推动非边缘挡板单元,使所有挡板单元均与第二边缘挡板单元重叠,以使所述挡板模组在晶圆表面的投影面积缩小。Optionally, the baffle unit located at the edge of the baffle module is provided with a second stopper; the first edge baffle unit and the second edge baffle unit are both connected with the second stopper. When the first edge baffle unit drives the second stop portion close to the second edge baffle unit, the second stop portion is used to push the non-edge baffle units so that all the baffle units are aligned with the second edge The baffle units overlap to reduce the projected area of the baffle module on the wafer surface.
可选的,所述喷淋板连接有通气阀,所述通气阀连接有若干反应气源;所述通气阀用于切换不同时间段内与喷淋板连通的反应气源,以使所述晶圆表面沉积介质膜层或金属薄膜。Optionally, the spray plate is connected with a vent valve, and the vent valve is connected with several reaction gas sources; the vent valve is used to switch the reaction gas sources communicated with the spray plate in different time periods, so that the Deposit a dielectric film or metal film on the surface of the wafer.
可选的,所述驱动单元和所述通气阀均电连接有控制单元;所述控制单元用于控制所述驱动单元和所述通气阀配合,以在晶圆表面不同区域沉积或刻蚀。Optionally, both the drive unit and the vent valve are electrically connected to a control unit; the control unit is used to control the cooperation between the drive unit and the vent valve to deposit or etch on different regions of the wafer surface.
附图说明Description of drawings
图1为本实用新型提供的一种挡板模组呈四分之一扇形设置的工艺腔的结构示意图;Fig. 1 is a schematic structural view of a process chamber in which a baffle module provided by the present invention is arranged in a quarter fan shape;
图2为本实用新型提供的一种挡板模组呈半圆设置的工艺腔的结构示意图;Fig. 2 is a schematic structural view of a process chamber in which a baffle module is arranged in a semicircle according to the utility model;
图3为本实用新型提供的一种挡板模组呈四分之三扇形设置的工艺腔的结构示意图;Fig. 3 is a structural schematic diagram of a process chamber in which the baffle module is provided in a three-quarter fan shape provided by the present invention;
图4为本实用新型提供的一种可折叠的挡板模组结构示意图;Fig. 4 is a schematic structural diagram of a foldable baffle module provided by the present invention;
图5为本实用新型提供的一种设置有出气孔的挡板模组的结构示意图;Fig. 5 is a structural schematic diagram of a baffle module provided with an air outlet provided by the utility model;
图6为本实用新型提供的一种设置有轨道的工艺腔的结构示意图;Fig. 6 is a structural schematic diagram of a process chamber provided with a track provided by the utility model;
图7为本实用新型提供的一种设置有止挡部挡板模组的结构示意图;Fig. 7 is a structural schematic diagram of a baffle module provided with a stopper provided by the utility model;
图8为本实用新型图7的A-A剖面的结构示意图;Fig. 8 is the structural representation of the A-A section of Fig. 7 of the utility model;
图9为本实用新型提供的一种设置有驱动单元和通气阀的工艺腔的结构示意图;Fig. 9 is a structural schematic diagram of a process chamber provided with a drive unit and a vent valve provided by the utility model;
图10为本实用新型提供的一种各区域沉积膜层厚度不同的晶圆的结构示意图;FIG. 10 is a structural schematic diagram of a wafer with different thicknesses of deposited films in each region provided by the present invention;
图11为本实用新型提供的一种各区域沉积膜层材质不同的晶圆的结构示意图;FIG. 11 is a structural schematic diagram of a wafer with different deposited film materials in each region provided by the present invention;
图12为本实用新型提供的一种不同膜层堆叠的晶圆的结构示意图。FIG. 12 is a schematic structural diagram of a wafer with different film layers stacked according to the present invention.
图中标号:Labels in the figure:
1、腔室;2、喷淋板;31、第一挡板模组;32、第二挡板模组;33、第三挡板模组;340、挡板单元;341、第一止挡部;342、第二止挡部;343、第一边缘挡板单元;344、第二边缘挡板单元;35、出气孔;36、空腔;4、底座;41、轨道;42、晶圆;421、槽口;5、反应气源;6、惰性气源;7、驱动单元;8、通气阀;9、控制单元。1. Chamber; 2. Spray plate; 31. First baffle module; 32. Second baffle module; 33. Third baffle module; 340. Baffle unit; 341.
具体实施方式Detailed ways
为使本实用新型的目的、技术方案和优点更加清楚,下面将结合本实用新型的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本实用新型的一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。除非另外定义,此处使用的技术术语或者科学术语应当为本实用新型所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。In order to make the purpose, technical solutions and advantages of the utility model clearer, the technical solutions in the embodiments of the utility model will be clearly and completely described below in conjunction with the accompanying drawings of the utility model. Obviously, the described embodiments are the Some embodiments of the utility model, but not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items.
图1为本实用新型提供的一种挡板模组呈四分之一扇形设置的工艺腔的结构示意图。Fig. 1 is a structural schematic diagram of a process chamber in which the baffle module is arranged in a quarter sector shape provided by the present invention.
针对现有技术存在的问题,如图1所示,本实施例提供了一种半导体工艺腔,用于向晶圆42表面沉积膜层或刻蚀膜层,包括:腔室1、喷淋板2、挡板模组和底座4。所述腔室1用于容纳所述喷淋板2、所述挡板模组和所述底座4。所述底座4用于承载晶圆42。所述喷淋板2与反应气体源连通,用于向所述晶圆42喷淋反应气体。所述挡板模组设于所述喷淋板2与所述晶圆42之间,用于阻挡反应气体流向所述晶圆42的保护区域。所述保护区域的面积小于等于所述晶圆42的面积。Aiming at the problems existing in the prior art, as shown in FIG. 1, this embodiment provides a semiconductor process chamber for depositing or etching a film on the surface of a
具体的,所述挡板模组设置为第一挡板模组31。所述第一挡板模组31呈四分之一扇形柱状设置。第一挡板模组31的轴心与所述晶圆42的中心位于同一竖直线上。所述保护区域位于所述第一挡板模组31正下方,占据所述晶圆42四分之一的面积。Specifically, the baffle module is configured as a
图2为本实用新型提供的一种挡板模组呈半圆设置的工艺腔的结构示意图。Fig. 2 is a schematic structural diagram of a process chamber in which the baffle module is provided in a semicircle according to the present invention.
如图2所示,另一些具体的实施例中,所述挡板模组设置为第二挡板模组32。所述第二挡板模组32呈二分之一扇形柱状设置。第二挡板模组32的轴心与所述晶圆42的中心位于同一竖直线上。所述保护区域位于所述第二挡板模组32正下方,占据所述晶圆42二分之一的面积。As shown in FIG. 2 , in some other specific embodiments, the baffle module is set as a
图3为本实用新型提供的一种挡板模组呈四分之三扇形设置的工艺腔的结构示意图。Fig. 3 is a structural schematic diagram of a process chamber provided by the utility model in which the baffle module is arranged in a three-quarter sector shape.
如图3所示,又一些具体的实施例中,所述挡板模组设置为第三挡板模组33。所述第三挡板模组33呈四分之三扇形柱状设置。第三挡板模组33的轴心与所述晶圆42的中心位于同一竖直线上。所述保护区域位于所述第三挡板模组33正下方,占据所述晶圆42四分之三的面积。As shown in FIG. 3 , in some specific embodiments, the baffle module is set as a
还有一些实施例中,所述挡板模组可以呈任意形状设置,只要满足挡板模组能够遮挡晶圆42的保护区域即可。In some other embodiments, the baffle module can be arranged in any shape, as long as the baffle module can cover the protection area of the
值得说明的是,本实用新型通过所述挡板模组设于所述喷淋板2与所述晶圆42之间,能够阻挡反应气体流向所述晶圆42的保护区域。所述保护区域的面积小于等于所述晶圆42的面积。本实用新型实现了遮挡晶圆42的保护区域,防止保护区域与反应气体接触,便于多项目晶圆的开发,防止同一片多项目晶圆上的各项目工艺相互干扰,有利于提升成膜良率。本申请使得一次工艺实验,一枚硅片上可实现多个分组条件,如不同膜厚的同种材质膜层淀积,以及不同材质不同膜厚的膜层淀积。同时本申请通过挡板的设计还能实现不同区域和区域形状的分组,便于后续测试。It is worth noting that the present invention can block the reaction gas from flowing to the protection area of the
应理解,本申请的工艺腔能够用于向晶圆表面沉积介质膜层、金属薄膜,也能够用于干法刻蚀工艺;所述沉积介质膜层包括低介电常数(Low-K)薄膜、介电抗反射涂层(Dielectric Anti Reflective Coating,DARC)、金属薄膜和金属氢化物薄膜;所述介电抗反射涂层包括不含氮的无机电介质抗反射涂层(N-free DARC,N-free DielectricAnt1-reflective Coating);所述金属薄膜包括铝(Al)薄膜、钛(Ti)薄膜、钽(Ta)薄膜;所述金属氢化物薄膜包括氢化钾(HK)薄膜。所述干法刻蚀工艺包括硅刻蚀和金属刻蚀。It should be understood that the process chamber of the present application can be used to deposit a dielectric film layer and a metal film on the wafer surface, and can also be used for a dry etching process; the deposited dielectric film layer includes a low dielectric constant (Low-K) film , dielectric antireflective coating (Dielectric Anti Reflective Coating, DARC), metal thin film and metal hydride thin film; The dielectric antireflective coating includes inorganic dielectric antireflective coating (N-free DARC, N -free DielectricAnt1-reflective Coating); The metal film includes aluminum (Al) film, titanium (Ti) film, tantalum (Ta) film; the metal hydride film includes potassium hydride (HK) film. The dry etching process includes silicon etching and metal etching.
图4为本实用新型提供的一种可折叠的挡板模组结构示意图。Fig. 4 is a schematic structural diagram of a foldable baffle module provided by the present invention.
如图1和4所示,在一些实施例中,所述挡板模组包括至少一个挡板单元340。所述挡板单元340呈扇形设置。多个所述挡板单元340层叠设置,相邻的所述挡板单元340之间活动连接。其有益效果在于,本实施例通过设置的所述挡板单元340呈扇形设置。多个所述挡板单元340层叠设置,相邻的所述挡板单元340之间活动连接。本实施例能够通过转动挡板单元340调节挡板模组的尺寸,以满足对应晶圆42的不同保护区域的需求。As shown in FIGS. 1 and 4 , in some embodiments, the baffle module includes at least one
具体的,所述挡板模组设置为第四挡板模组。所述第四挡板模组设置为12个层叠的呈扇形柱状设置的挡板单元340。每个挡板单元340的轴心与所述晶圆42的中心位于同一竖直线上。所述保护区域位于所述第四挡板模组正下方。本实施例通过控制相邻的挡板单元340转动角度能够控制保护区域占据晶圆42的面积处于十二分之一晶圆42面积至一个晶圆42面积的区间。Specifically, the baffle module is set as a fourth baffle module. The fourth baffle module is configured as 12
另一些具体的实施例中,所述挡板单元340的数量可以设置为任意正整数。所述挡板单元340的形状可以呈任意立体几何状设置。In other specific embodiments, the number of the
图5为本实用新型提供的一种设置有出气孔的挡板模组的结构示意图。Fig. 5 is a schematic structural diagram of a baffle module provided with air outlets provided by the present invention.
如图3和5所示,在一些实施例中,所述挡板模组靠近晶圆42的一侧开设有出气孔35。所述挡板模组的内侧设有空腔36。所述空腔36用于连通所述出气孔35和惰性气体源,以使所述挡板模组向晶圆42吹扫惰性气体。其有益效果在于,本实施例通过所述空腔36连通所述出气孔35和惰性气体源,以使所述挡板单元340向晶圆42吹扫惰性气体,避免反应气体与晶圆42的保护区域接触,有利于减少工艺步骤间的干扰,确保膜层的良率。As shown in FIGS. 3 and 5 , in some embodiments, an
具体的,所述第三挡板模组33底侧边缘处设有出气孔35。Specifically, an
另一些具体的实施例中,所述出气孔35设于第四挡板模组的每个挡板单元340的底端面。所述出气孔35均匀分布于挡板单元340底端面。In other specific embodiments, the
又一些具体的实施例中,所述出气孔35还可以设于所述第一挡板模组31和第二挡板模组32。所述出气孔35可以呈任意形式分布于挡板模组靠近晶圆42的侧面,只要满足出气孔35吹扫的惰性气体能够覆盖或包围保护区域即可。In still some specific embodiments, the
图6为本实用新型提供的一种设置有轨道的工艺腔的结构示意图。Fig. 6 is a schematic structural view of a process chamber provided with rails provided by the present invention.
如图6所示,在一些实施例中,所述腔室1内设有轨道41。所述轨道41与所述挡板模组滑动连接,用于支撑所述挡板模组,以使挡板模组受力时能够沿所述轨道41运动。As shown in FIG. 6 , in some embodiments, a track 41 is provided inside the
具体的,所述轨道41与所述底座4的顶端面固定连接。所述轨道41呈圆环状。所述轨道41的顶端与所述挡板模组的底端转动连接。当挡板模组受力时,所述挡板模组相对于所述晶圆42旋转。Specifically, the track 41 is fixedly connected to the top surface of the
另一些具体的实施例中,所述轨道41与所述底座4的顶端面可拆卸连接。所述轨道41呈扇环状。所述轨道41的顶端与所述挡板模组的底端转动连接。当挡板模组受力时,所述挡板模组在晶圆表面的投影轮廓变化,以改变所述保护区域的面积。In other specific embodiments, the track 41 is detachably connected to the top surface of the
又一些具体的实施例中,所述轨道41可以设于所述腔室1的内壁,所述轨道41的内侧与所述挡板模组的外侧转动连接。当挡板模组受力时,挡板模组沿所述轨道41运动,同时所述挡板模组在晶圆表面的投影轮廓变化,以改变所述保护区域的面积。In still some specific embodiments, the track 41 may be provided on the inner wall of the
值得说明的是,所述轨道41对挡板模组的支撑可以是不连续点支撑也可以是连续的面支撑。It is worth noting that the support of the rail 41 to the baffle module can be a discontinuous point support or a continuous surface support.
在一些实施例中,所述挡板模组连接有驱动单元7。所述驱动单元7处于工作状态时,用于驱动所述挡板模组运动。In some embodiments, the baffle module is connected with a
具体的,所述驱动单元7设置为电机。所述电机的主轴与所述挡板模组固定连接。所述电机的主轴转动时,带动所述挡板模组转动。Specifically, the
另一些具体实施例中,所述驱动单元7设置为第一电机和第二电机,所述第一电机和第二电机分别与不同的挡板单元340固定连接。本实施例通过设置的所述第一电机和第二电机分别与不同的挡板单元340固定连接,便于驱动不同的挡板单元340相对转动,能够实现所述挡板模组在晶圆表面的投影轮廓变化。In other specific embodiments, the
在一些实施例中,所述挡板模组在晶圆表面的投影面积最小时,所述外轮廓的投影轮廓与一个所述挡板单元340在晶圆表面的投影轮廓相同。In some embodiments, when the projected area of the baffle module on the wafer surface is the smallest, the projected contour of the outer contour is the same as the projected contour of one
具体的,每个所述挡板单元340的尺寸均相同。挡板模组在垂直于所述晶圆42方向的外轮廓的最小面积与一个所述挡板单元340在晶圆表面的投影轮廓相同。Specifically, the size of each of the
在另一些具体的实施例中,每个所述挡板单元340的尺寸可以以不同。所述挡板模组在晶圆表面的投影轮廓与尺寸最大的一个所述挡板单元340在晶圆表面的投影轮廓相同。In other specific embodiments, the size of each
图7为本实用新型提供的一种设置有止挡部挡板模组的结构示意图。图8为本实用新型图7的A-A剖面的结构示意图。Fig. 7 is a schematic structural view of a baffle module provided with a stopper provided by the present invention. Fig. 8 is a structural schematic diagram of the section A-A of Fig. 7 of the present invention.
如图7所示,在一些实施例中,相邻的所述挡板单元340设有第一止挡部341。所述第一止挡部341用于限制相邻的所述挡板单元340的相对转动角度。As shown in FIG. 7 , in some embodiments,
具体的,第一止挡部341呈条形设于挡板单元340的径向侧,并朝向垂直于晶圆42表面的方向凸出。对于相邻的每两个挡板单元340,位于第一方向侧的挡板单元340的第二方向所连接的第一止挡部341与位于第二方向侧的挡板单元340的第一方向所连接的第一止挡部341贴合时,所述相邻两个挡板单元340的中心距离处于最远状态。本实施例通过设置的第一止挡部341避免相邻两个挡板单元340分离过远导致反应气体穿过两个挡板单元340间的缝隙接触晶圆42表面的保护区域。Specifically, the
另一些实施例中,所述第一止挡部341可以设置为任意形状,设于挡板单元340的任意位置。In some other embodiments, the
如图7和图8所示,在一些实施例中,第一边缘挡板单元343和第二边缘挡板单元343均连接有第二止挡部342。当第一边缘挡板单元343带动所述第二止挡部342靠近第二边缘挡板单元时,所述第二止挡部342能够触碰到并推动非边缘挡板单元,使所有挡板单元均与第二边缘挡板单元343重叠,以使所述挡板模组在晶圆表面的投影面积缩小。As shown in FIG. 7 and FIG. 8 , in some embodiments, both the first
具体的,所述第二止挡部342设于挡板模组的第一边缘挡板单元343处。所述第二止挡部342的高度大于所述挡板模组的所有挡板单元340的高度和。所述高度为垂直于晶圆42表面的方向上的尺寸。当所述第二止挡部342向第二方向移动时,所述第二止挡部342带动其接触到的挡板单元340向第二方向移动。Specifically, the
在另一些具体实施例中,所述第二止挡部342设于挡板模组的第二边缘挡板单元344处。所述第二止挡部342的高度大于所述挡板模组的所有挡板单元340的高度和。所述高度为垂直于晶圆42表面的方向上的尺寸。当所述第二止挡部342向第一方向移动时,所述第二止挡部342带动其接触到的挡板单元340向第一方向移动。In some other specific embodiments, the
图9为本实用新型提供的一种设置有驱动单元和通气阀的工艺腔的结构示意图。Fig. 9 is a schematic structural diagram of a process chamber provided with a drive unit and a vent valve provided by the present invention.
如图9所示,在一些实施例中,所述喷淋板2连接有通气阀8,所述通气阀8连接有若干反应气源5。所述通气阀8用于切换不同时间段内与喷淋板2连通的反应气源5,以使所述晶圆42表面沉积介质膜层或金属薄膜。As shown in FIG. 9 , in some embodiments, the
在一些实施例中,所述驱动单元7和所述通气阀8均电连接有控制单元9。所述控制单元9用于控制所述驱动单元7和所述通气阀8配合,以在晶圆42表面不同区域沉积或刻蚀。In some embodiments, both the
具体的,所述控制单元9设置为处理器。所述处理器用于控制通气阀8选择与喷淋板2连通的反应气源5,以及控制连通反应气源5的时间段。所述处理器还用于驱动单元7驱动所述挡板模组的旋转角度。Specifically, the
如图5和9所示,另一些具体的实施例中,在晶圆42进入腔室1之前,向所述挡板模组的空腔36通入惰性气体,控制单元9用于根据工艺菜单设定所述挡板模组的出气孔35向底座4喷淋的惰性气体的流量大小。As shown in Figures 5 and 9, in some other specific embodiments, before the
图10为本实用新型提供的一种各区域沉积膜层厚度不同的晶圆的结构示意图。FIG. 10 is a schematic structural diagram of a wafer with different deposited film thicknesses in each region provided by the present invention.
如图4和10所示,具体的,所述挡板模组设置为所述第四挡板模组。首先,旋转挡板单元340调整保护区域,使得在第一时段内,保护区域包括第二区域、第三区域和第四区域,第一区域内的晶圆42表面生长的膜层。然后,旋转挡板单元340调整保护区域,使得在第二时段内,保护区域包括第三区域和第四区域,第一区域内的晶圆42表面的膜层生长至第二区域内的晶圆42表面生长的膜层。其次,旋转挡板单元340调整保护区域,使得在第三时段内,保护区域包括第四区域,第一区域内的晶圆42表面的膜层生长至第二区域内的晶圆42表面的膜层生长至第三区域内的晶圆42表面生长的膜层。最后,旋转挡板单元340调整保护区域,使得在第四时段内,保护区域包括第一区域、第二区域和第三区域,第四区域内的晶圆42表面生长的膜层。本实施例能够实现4个不同区域在一次工艺中沉积不同厚度的膜层。As shown in FIGS. 4 and 10 , specifically, the baffle module is configured as the fourth baffle module. Firstly, the
如图9和10所示,另一些具体的实施例中,在晶圆42进进入腔室1前,晶圆42经过刻蚀,以在晶圆42表面形成槽口421。控制单元9还用于根据所述槽口421的位置确定工艺菜单中各区域的位置。As shown in FIGS. 9 and 10 , in other specific embodiments, before the
图11为本实用新型提供的一种各区域沉积膜层材质不同的晶圆的结构示意图。FIG. 11 is a schematic structural diagram of a wafer with different deposited film materials in each region provided by the present invention.
如图3和11所示,另一些具体的实施例中,所述挡板模组设置为所述第三挡板模组33。首先,旋转第三挡板模组33调整保护区域,使得在第一时段内,保护区域包括第二区域、第三区域和第四区域,第一区域内的晶圆42表面生长氮化钛膜层。然后,旋转第三挡板模组33调整保护区域,使得在第二时段内,保护区域包括第一区域、第三区域和第四区域,第二区域内的晶圆42表面生长钛膜层。其次,旋转第三挡板模组33调整保护区域,使得在第三时段内,保护区域包括第一区域、第二区域和第四区域,第三区域内的晶圆42表面生长铝膜层。最后,旋转第三挡板模组33调整保护区域,使得在第四时段内,保护区域包括第一区域、第二区域和第三区域,第四区域内的晶圆42表面生长钛与氮化钛的混合物膜层。As shown in FIGS. 3 and 11 , in other specific embodiments, the baffle module is configured as the
图12为本实用新型提供的一种不同膜层堆叠的晶圆的结构示意图。FIG. 12 is a schematic structural diagram of a wafer with different film layers stacked according to the present invention.
如图1和12所示,又一些具体的实施例中,所述挡板模组设置为所述第一挡板模组31。晶圆42进入腔室1后,将第一挡板模组31移至晶圆42的第一区域处,完成除第一区域外的其他区域的二氧化硅膜层沉积,之后将第一挡板模组31处移至第二区域,完成除第二区域外的其他区域的氮化硅膜层沉积,之后将第一挡板模组31移至第三区域,完成除第三区域以外的其他区域的二氧化硅膜层沉积。本实施例能够实现不同膜层堆叠。As shown in FIGS. 1 and 12 , in still some specific embodiments, the baffle module is configured as the
值得说明的是,所述挡板模组可以设置为任意形状。晶圆42表面生长的膜层厚度取决于喷淋板2的流量、保护区域的位置和反应气体持续向晶圆42喷淋时间。晶圆42表面生长的膜层成分取决于通气阀8连通的反应气源5类型。反应气源5向喷淋板2提供的反应气体还可以用于刻蚀晶圆42表面,以使本实施例能够实现对晶圆42在非保护区域的刻蚀。It is worth noting that the baffle module can be set in any shape. The thickness of the film layer grown on the surface of the
虽然在上文中详细说明了本实用新型的实施方式,但是对于本领域的技术人员来说显而易见的是,能够对这些实施方式进行各种修改和变化。但是,应理解,这种修改和变化都属于权利要求书中所述的本实用新型的范围和精神之内。而且,在此说明的本实用新型可有其它的实施方式,并且可通过多种方式实施或实现。Although the embodiments of the present invention have been described in detail above, it is obvious for those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes belong to the scope and spirit of the present invention described in the claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or carried out in various ways.
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