CN219032356U - Semiconductor process chamber - Google Patents

Abstract

The utility model provides a semiconductor process chamber, comprising: the device comprises a chamber, a spray plate, a baffle module and a base; the chamber is used for accommodating the spray plate, the baffle plate module and the base; the base is used for bearing a wafer; the spraying plate is communicated with a reaction gas source and is used for spraying reaction gas to the wafer; the baffle plate module is arranged between the spray plate and the wafer and is used for blocking the reaction gas from flowing to the protection area of the wafer. The process chamber is used for depositing a film layer or etching the film layer outside the wafer surface protection area.

Description

Semiconductor process chamber

Technical Field

The utility model relates to the field of semiconductor technology, in particular to a semiconductor technology cavity.

Background

The conventional complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS) film forming process is to form a film once in a process chamber, and to realize a uniform film with uniform film thickness and material quality on the wafer surface, which is necessary in a mass production process.

Currently, in the development of Multi-project wafers (Multi ProjectWafer, MPW) or in the prior process and devices, the performance adjustment and product development of the devices are required by adjusting the film thickness and the materials of different layers, and a large number of process grouping experiments are required, especially for the process development of 12-inch wafers, the cost of the wafers is high, and the process cost is high. Accordingly, a new semiconductor process chamber is needed to ameliorate the above problems.

Disclosure of Invention

The utility model aims to provide a semiconductor process chamber which is used for depositing a film layer or etching the film layer outside a wafer surface protection area.

In a first aspect, the present utility model provides a semiconductor process chamber for depositing a film or etching a film onto a wafer surface, comprising: the device comprises a chamber, a spray plate, a baffle module and a base; the chamber is used for accommodating the spray plate, the baffle plate module and the base; the base is used for bearing a wafer; the spraying plate is communicated with a reaction gas source and is used for spraying reaction gas to the wafer; the baffle plate module is arranged between the spray plate and the wafer and used for blocking the reaction gas from flowing to a protection area of the wafer; the area of the protection area is smaller than that of the wafer.

The device has the beneficial effects that: the baffle plate module is arranged between the spray plate and the wafer, so that the reaction gas can be prevented from flowing to a protection area of the wafer; the area of the protection area is smaller than that of the wafer. The utility model realizes shielding the protection area of the wafer, prevents the protection area from contacting with the reaction gas, is convenient for developing the wafer with multiple projects, prevents the processes of each project on the same wafer with multiple projects from interfering with each other, and is beneficial to improving the film forming yield.

Optionally, the baffle module comprises at least one baffle unit; the baffle units are arranged in a fan shape; the baffle units are arranged in a stacked mode, and adjacent baffle units are movably connected. The baffle unit has the beneficial effects that the baffle unit is arranged in a fan shape; the baffle units are arranged in a stacked mode, and adjacent baffle units are connected in a rotating mode. The size of baffle module can be adjusted through rotating baffle unit to this application to satisfy the different protection zone's of corresponding wafer demand.

Optionally, an air outlet hole is formed in one side, close to the wafer, of the baffle module; the inner side of the baffle plate module is provided with a cavity; the cavity is used for communicating the air outlet hole and the inert gas source so that the baffle plate module can purge inert gas to the wafer. The baffle unit has the beneficial effects that the air outlet holes and the inert gas source are communicated through the cavity, so that the baffle unit sweeps inert gas towards the wafer, the contact between reaction gas and a protection area of the wafer is avoided, the interference among process steps is reduced, and the yield of a film layer is ensured.

Optionally, a track is arranged in the cavity; the track is in sliding connection with the baffle module and is used for supporting the baffle module, so that the baffle module can move along the track when being stressed.

Optionally, the baffle module is connected with a driving unit; and the driving unit is used for driving the baffle plate module to move when in a working state.

Optionally, when the projection area of the baffle module on the surface of the wafer is the smallest, the projection area of the baffle module on the surface of the wafer is the same as the projection area of one baffle unit on the surface of the wafer.

Optionally, adjacent baffle units are provided with first stopping parts; the first stop portion is used for limiting the relative rotation angle of the adjacent baffle units.

Optionally, the baffle unit at the edge of the baffle module is provided with a second stop part; the first edge baffle unit and the second edge baffle unit are connected with a second stop part. When the first edge baffle unit drives the second stop part to be close to the second edge baffle unit, the second stop part is used for pushing the non-edge baffle units to enable all baffle units to be overlapped with the second edge baffle unit, so that the projection area of the baffle module on the surface of the wafer is reduced.

Optionally, the spraying plate is connected with a ventilation valve, and the ventilation valve is connected with a plurality of reaction gas sources; the ventilation valve is used for switching a reaction gas source communicated with the spray plate in different time periods so as to enable the surface of the wafer to deposit a dielectric film layer or a metal film.

Optionally, the driving unit and the ventilation valve are electrically connected with a control unit; the control unit is used for controlling the driving unit and the ventilation valve to be matched so as to deposit or etch in different areas on the surface of the wafer.

Drawings

FIG. 1 is a schematic diagram of a process chamber with a quarter fan-shaped baffle module according to the present utility model;

FIG. 2 is a schematic diagram of a process chamber with semi-circular baffle modules according to the present utility model;

FIG. 3 is a schematic view of a process chamber with a three-quarter fan shape of a baffle module according to the present utility model;

FIG. 4 is a schematic view of a foldable baffle module according to the present utility model;

FIG. 5 is a schematic structural diagram of a baffle module with air outlet holes according to the present utility model;

FIG. 6 is a schematic view of a process chamber with rails according to the present utility model;

FIG. 7 is a schematic view of a baffle module with a stopper according to the present utility model;

FIG. 8 is a schematic view of the structure of section A-A of FIG. 7 in accordance with the present utility model;

FIG. 9 is a schematic view of a process chamber with a drive unit and a vent valve according to the present utility model;

FIG. 10 is a schematic diagram of a wafer with different thickness of deposited film in each area according to the present utility model;

FIG. 11 is a schematic diagram of a wafer with different material for each deposited film layer;

fig. 12 is a schematic structural diagram of a wafer with different film stacks according to the present utility model.

Reference numerals in the drawings:

1. a chamber; 2. a spray plate; 31. a first baffle module; 32. a second baffle module; 33. a third baffle module; 340. a baffle unit; 341. a first stop portion; 342. a second stop portion; 343. a first edge barrier unit; 344. a second edge barrier unit; 35. an air outlet hole; 36. a cavity; 4. a base; 41. a track; 42. a wafer; 421. a notch; 5. a reaction gas source; 6. an inert gas source; 7. a driving unit; 8. a vent valve; 9. and a control unit.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

Fig. 1 is a schematic structural view of a process chamber with a quarter fan-shaped baffle module according to the present utility model.

In view of the problems in the prior art, as shown in fig. 1, the present embodiment provides a semiconductor process chamber for depositing a film layer or etching a film layer on a surface of a wafer 42, including: chamber 1, shower plate 2, baffle module and base 4. The chamber 1 is used for accommodating the spray plate 2, the baffle plate module and the base 4. The base 4 is used for carrying a wafer 42. The shower plate 2 is in communication with a source of reactive gas for spraying the reactive gas onto the wafer 42. The baffle module is disposed between the shower plate 2 and the wafer 42, and is used for blocking the reaction gas from flowing to the protection area of the wafer 42. The area of the protection region is less than or equal to the area of the wafer 42.

Specifically, the baffle module is set as the first baffle module 31. The first baffle module 31 is arranged in a quarter sector column shape. The axis of the first baffle module 31 and the center of the wafer 42 are located on the same vertical line. The protection area is located directly under the first baffle module 31 and occupies a quarter of the area of the wafer 42.

Fig. 2 is a schematic structural diagram of a process chamber with a semicircular baffle module according to the present utility model.

In other embodiments, as shown in fig. 2, the baffle module is configured as a second baffle module 32. The second baffle module 32 is arranged in a half sector column shape. The axis of the second baffle module 32 is on the same vertical line as the center of the wafer 42. The protection area is located directly under the second baffle module 32 and occupies half of the area of the wafer 42.

FIG. 3 is a schematic view of a three-quarter sector process chamber of a baffle module according to the present utility model.

In still other embodiments, as shown in fig. 3, the baffle module is configured as a third baffle module 33. The third baffle module 33 is arranged in a three-quarter sector column. The axis of the third baffle module 33 and the center of the wafer 42 are located on the same vertical line. The protection area is located directly under the third baffle module 33 and occupies three quarters of the area of the wafer 42.

In still other embodiments, the baffle module may be configured in any shape as long as the baffle module is capable of shielding the protection area of the wafer 42.

It should be noted that, the baffle module is disposed between the shower plate 2 and the wafer 42, so as to block the reaction gas from flowing to the protection area of the wafer 42. The area of the protection region is less than or equal to the area of the wafer 42. The utility model realizes shielding the protection area of the wafer 42, prevents the protection area from contacting with the reaction gas, facilitates the development of the multi-project wafer, prevents the mutual interference of the processes of each project on the same wafer, and is beneficial to improving the film forming yield. The method and the device enable one process experiment to realize a plurality of grouping conditions, such as film deposition of the same material with different film thicknesses and film deposition of different materials with different film thicknesses, on one silicon wafer. Meanwhile, the grouping of different areas and area shapes can be realized through the design of the baffle plate, and subsequent testing is facilitated.

It should be understood that the process chamber of the present application can be used to deposit dielectric film layers, metal films, and dry etching processes onto the wafer surface; the deposited dielectric film layer comprises a Low-K film, a dielectric anti-reflection coating (Dielectric Anti Reflective Coating, DARC), a metal film and a metal hydride film; the dielectric antireflective coating comprises a nitrogen-free inorganic dielectric antireflective coating (N-free DARC, N-free DielectricAnt1-reflective Coating); the metal film comprises an aluminum (Al) film, a titanium (Ti) film and a tantalum (Ta) film; the metal hydride film comprises a potassium Hydride (HK) film. The dry etching process comprises silicon etching and metal etching.

Fig. 4 is a schematic structural view of a foldable baffle module according to the present utility model.

As shown in fig. 1 and 4, in some embodiments, the baffle module includes at least one baffle unit 340. The baffle unit 340 is disposed in a fan shape. The baffle units 340 are stacked, and adjacent baffle units 340 are movably connected. The beneficial effects of this embodiment are that the baffle units 340 are arranged in a fan shape. The baffle units 340 are stacked, and adjacent baffle units 340 are movably connected. The size of the baffle module can be adjusted by rotating the baffle unit 340 to meet the requirements of different protection areas of the corresponding wafer 42.

Specifically, the baffle module is set as a fourth baffle module. The fourth baffle module is configured as 12 stacked baffle units 340 in a fan-shaped column configuration. The axis of each baffle unit 340 is on the same vertical line as the center of the wafer 42. The protection area is located right below the fourth baffle module. The present embodiment can control the area occupied by the protection area on the wafer 42 to be in the interval from one tenth of the area of the wafer 42 to one wafer 42 by controlling the rotation angle of the adjacent barrier units 340.

In other embodiments, the number of baffle units 340 may be set to any positive integer. The shape of the baffle unit 340 may be any solid geometry.

Fig. 5 is a schematic structural diagram of a baffle module with air outlet holes according to the present utility model.

In some embodiments, as shown in fig. 3 and 5, the baffle module has an air outlet 35 formed on a side thereof adjacent to the wafer 42. The inside of the baffle module is provided with a cavity 36. The cavity 36 is configured to communicate the gas outlet aperture 35 with a source of inert gas to purge the inert gas from the baffle module to the wafer 42. The beneficial effects of this embodiment are that the air outlet hole 35 is communicated with the inert gas source through the cavity 36, so that the baffle unit 340 sweeps inert gas towards the wafer 42, thereby avoiding the contact between the reaction gas and the protection area of the wafer 42, being beneficial to reducing the interference between the process steps and ensuring the yield of the film layer.

Specifically, the bottom side edge of the third baffle module 33 is provided with an air outlet hole 35.

In other specific embodiments, the air outlet holes 35 are provided in the bottom end surface of each baffle unit 340 of the fourth baffle module. The air outlet holes 35 are uniformly distributed on the bottom end surface of the baffle unit 340.

In still other embodiments, the air outlet holes 35 may be formed in the first baffle module 31 and the second baffle module 32. The gas outlet holes 35 may be distributed on the side of the baffle module near the wafer 42 in any form, as long as the inert gas purged by the gas outlet holes 35 can cover or enclose the protection area.

Fig. 6 is a schematic structural diagram of a process chamber with rails according to the present utility model.

As shown in fig. 6, in some embodiments, a track 41 is provided within the chamber 1. The rail 41 is slidably connected with the baffle module, and is used for supporting the baffle module, so that the baffle module can move along the rail 41 when being stressed.

Specifically, the rail 41 is fixedly connected to the top end surface of the base 4. The rail 41 is circular. The top end of the rail 41 is rotatably connected with the bottom end of the baffle module. The baffle module rotates relative to the wafer 42 when the baffle module is subjected to a force.

In other embodiments, the rail 41 is detachably connected to the top surface of the base 4. The rail 41 has a fan shape. The top end of the rail 41 is rotatably connected with the bottom end of the baffle module. When the baffle plate module is stressed, the projection profile of the baffle plate module on the surface of the wafer is changed so as to change the area of the protection area.

In still other embodiments, the rail 41 may be disposed on an inner wall of the chamber 1, and an inner side of the rail 41 is rotatably connected to an outer side of the baffle module. When the baffle module is stressed, the baffle module moves along the track 41, and meanwhile, the projection profile of the baffle module on the surface of the wafer is changed, so that the area of the protection area is changed.

It should be noted that the support of the baffle module by the rail 41 may be a discontinuous point support or a continuous surface support.

In some embodiments, a drive unit 7 is connected to the baffle module. And the driving unit 7 is used for driving the baffle plate module to move when in a working state.

Specifically, the driving unit 7 is provided as a motor. And a main shaft of the motor is fixedly connected with the baffle plate module. And when the main shaft of the motor rotates, the baffle plate module is driven to rotate.

In other embodiments, the driving unit 7 is configured as a first motor and a second motor, and the first motor and the second motor are respectively fixedly connected with different baffle units 340. According to the embodiment, the first motor and the second motor are respectively and fixedly connected with different baffle units 340, so that different baffle units 340 can be driven to rotate relatively, and the projection profile change of the baffle module on the surface of the wafer can be realized.

In some embodiments, the projected profile of the outer contour is the same as the projected profile of one of the baffle units 340 on the wafer surface when the projected area of the baffle module on the wafer surface is minimal.

Specifically, each of the baffle units 340 has the same size. The minimum area of the outer contour of the baffle module in the direction perpendicular to the wafer 42 is the same as the projected contour of one baffle unit 340 on the wafer surface.

In other specific embodiments, the size of each baffle unit 340 may be different. The projected contour of the baffle module on the wafer surface is the same as the projected contour of the baffle unit 340 with the largest size on the wafer surface.

Fig. 7 is a schematic structural diagram of a baffle module with a stop portion according to the present utility model. FIG. 8 is a schematic view of the structure of section A-A of FIG. 7 according to the present utility model.

As shown in fig. 7, in some embodiments, adjacent baffle units 340 are provided with a first stop 341. The first stop 341 is configured to limit the relative rotation angle of the adjacent baffle units 340.

Specifically, the first stop portion 341 is disposed on a radial side of the baffle unit 340 in a strip shape, and protrudes toward a direction perpendicular to the surface of the wafer 42. For every two adjacent barrier units 340, when the first stopper 341 connected to the second direction of the barrier unit 340 located at the first direction side is attached to the first stopper 341 connected to the first direction of the barrier unit 340 located at the second direction side, the center distance of the two adjacent barrier units 340 is in the farthest state. The first stopping portion 341 of this embodiment prevents the adjacent two baffle units 340 from being separated too far, so that the reaction gas passes through the gap between the two baffle units 340 to contact the protection area of the surface of the wafer 42.

In other embodiments, the first stop portion 341 may be configured in any shape and disposed at any position of the baffle unit 340.

As shown in fig. 7 and 8, in some embodiments, a second stop 342 is connected to both the first edge dam unit 343 and the second edge dam unit 343. When the first edge baffle unit 343 drives the second stop portion 342 to approach the second edge baffle unit, the second stop portion 342 can touch and push the non-edge baffle units, so that all the baffle units overlap with the second edge baffle unit 343, and the projection area of the baffle module on the wafer surface is reduced.

Specifically, the second stop 342 is disposed at the first edge baffle unit 343 of the baffle module. The height of the second stopper 342 is greater than the sum of the heights of all the barrier units 340 of the barrier module. The height is the dimension in a direction perpendicular to the surface of the wafer 42. When the second stopping portion 342 moves in the second direction, the second stopping portion 342 drives the baffle unit 340 contacted with the second stopping portion 342 to move in the second direction.

In other embodiments, the second stop 342 is provided at a second edge dam unit 344 of the dam module. The height of the second stopper 342 is greater than the sum of the heights of all the barrier units 340 of the barrier module. The height is the dimension in a direction perpendicular to the surface of the wafer 42. When the second stopping portion 342 moves in the first direction, the second stopping portion 342 drives the baffle unit 340 contacted with the second stopping portion 342 to move in the first direction.

Fig. 9 is a schematic structural view of a process chamber provided with a driving unit and a vent valve according to the present utility model.

As shown in fig. 9, in some embodiments, the shower plate 2 is connected with a vent valve 8, and the vent valve 8 is connected with a plurality of reaction gas sources 5. The ventilation valve 8 is used for switching the reaction gas source 5 communicated with the spray plate 2 in different time periods so as to deposit a dielectric film layer or a metal film on the surface of the wafer 42.

In some embodiments, a control unit 9 is electrically connected to both the drive unit 7 and the vent valve 8. The control unit 9 is used to control the driving unit 7 and the ventilation valve 8 to cooperate to deposit or etch at different areas of the surface of the wafer 42.

Specifically, the control unit 9 is provided as a processor. The processor is used for controlling the vent valve 8 to select the reaction gas source 5 communicated with the shower plate 2 and controlling the period of time for communicating with the reaction gas source 5. The processor is also used for driving the rotation angle of the baffle module by the driving unit 7.

In other embodiments, as shown in fig. 5 and 9, the inert gas is introduced into the cavity 36 of the baffle module before the wafer 42 enters the chamber 1, and the control unit 9 is configured to set the flow rate of the inert gas sprayed from the gas outlet hole 35 of the baffle module to the base 4 according to the process menu.

Fig. 10 is a schematic structural diagram of a wafer with different thickness of deposited film in each area according to the present utility model.

As shown in fig. 4 and 10, in particular, the barrier module is provided as the fourth barrier module. First, the rotating shutter unit 340 adjusts the protection region such that the protection region includes a second region, a third region, and a fourth region during a first period of time, the surface of the wafer 42 in the first region grows

Is a film layer of the composition. Then, the spin baffle unit 340 adjusts the protection region such that the protection region includes a third region and a fourth region within the second period, and the film layer on the surface of the wafer 42 within the first region grows to +.>

Wafer 42 surface growth in the second region>

Is a film layer of the composition. Next, the rotating shutter unit 340 adjusts the protection region such that, in the third period, the protection region includes a fourth region in which the film layer on the surface of the wafer 42 grows to

The film layer on the surface of the wafer 42 in the second region grows to +.>

Wafer 42 surface growth in the third region

Is a film layer of the composition. Finally, the spin baffle unit 340 adjusts the protection region such that the protection region includes the first region, the second region, and the third region during the fourth period of time, the surface growth +/of the wafer 42 in the fourth region>

Is a film layer of the composition. The embodiment can realize that 4 different areas deposit film layers with different thicknesses in one process.

In other embodiments, as shown in fig. 9 and 10, wafer 42 is etched to form notches 421 in the surface of wafer 42 before wafer 42 enters chamber 1. The control unit 9 is also arranged to determine the position of the areas in the process menu based on the position of said notch 421.

FIG. 11 is a schematic diagram of a wafer with different deposited film materials in various regions according to the present utility model.

In other embodiments, as shown in fig. 3 and 11, the baffle module is configured as the third baffle module 33. First, the third baffle module 33 is rotated to adjust the protection area, so that the protection area includes a second area, a third area and a fourth area in the first period, and a titanium nitride film layer grows on the surface of the wafer 42 in the first area. Then, the third shutter module 33 is rotated to adjust the protection area, so that the protection area includes the first area, the third area and the fourth area, and the titanium film layer grows on the surface of the wafer 42 in the second area. Next, the third shutter module 33 is rotated to adjust the protection area, so that the protection area includes the first area, the second area, and the fourth area, and an aluminum film layer grows on the surface of the wafer 42 in the third area. Finally, the third shutter module 33 is rotated to adjust the protection area, so that in the fourth period, the protection area includes the first area, the second area and the third area, and a mixture film layer of titanium and titanium nitride grows on the surface of the wafer 42 in the fourth area.

Fig. 12 is a schematic structural diagram of a wafer with different film stacks according to the present utility model.

In still other embodiments, as shown in fig. 1 and 12, the baffle module is configured as the first baffle module 31. After the wafer 42 enters the chamber 1, the first baffle module 31 is moved to a first area of the wafer 42 to finish silicon dioxide film deposition in other areas except the first area, then the first baffle module 31 is moved to a second area to finish silicon nitride film deposition in other areas except the second area, then the first baffle module 31 is moved to a third area to finish silicon dioxide film deposition in other areas except the third area. The embodiment can realize different film layer stacks.

It should be noted that the baffle module may be provided in any shape. The thickness of the film grown on the surface of the wafer 42 depends on the flow rate of the shower plate 2, the position of the protection region, and the duration of the shower of the reaction gas to the wafer 42. The composition of the film grown on the surface of the wafer 42 depends on the type of reactant gas source 5 that is in communication with the vent valve 8. The reactant gas provided by the reactant gas source 5 to the shower plate 2 may also be used to etch the surface of the wafer 42, so that this embodiment may enable etching of the wafer 42 in non-protected areas.

While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (10)

1. A semiconductor process chamber for depositing a film or etching a film on a wafer surface, comprising:

the device comprises a chamber, a spray plate, a baffle module and a base;

the chamber is used for accommodating the spray plate, the baffle plate module and the base;

the base is used for bearing a wafer;

the spraying plate is communicated with a reaction gas source and is used for spraying reaction gas to the wafer;

the baffle plate module is arranged between the spray plate and the wafer and is used for blocking the reaction gas from flowing to the protection area of the wafer.

2. The process chamber of claim 1, wherein the baffle module comprises at least one baffle unit;

the baffle units are arranged in a fan shape;

the baffle units are arranged in a stacked mode, and adjacent baffle units are movably connected.

3. The process chamber of claim 1, wherein the baffle module has an air outlet opening on a side proximate to the wafer;

the inner side of the baffle plate module is provided with a cavity; the cavity is used for communicating the air outlet hole and the inert gas source so that the baffle plate module can purge inert gas to the wafer.

4. The process chamber of claim 1, wherein a track is provided within the chamber; the track is in sliding connection with the baffle module and is used for supporting the baffle module, so that the baffle module can move along the track when being stressed.

5. The process chamber of claim 1, wherein the baffle module is coupled to a drive unit;

and the driving unit is used for driving the baffle plate module to move when in a working state.

6. The process chamber of claim 2, wherein the projected area of the baffle module on the wafer surface is the same as the projected area of one of the baffle units on the wafer surface when the projected area of the baffle module on the wafer surface is the smallest.

7. The process chamber of claim 2, wherein adjacent baffle units are provided with a first stop; the first stop portion is used for limiting the relative rotation angle of the adjacent baffle units.

8. The process chamber of claim 2, wherein the first edge dam unit and the second edge dam unit are each coupled to a second stop; when the first edge baffle unit drives the second stop part to be close to the second edge baffle unit, the second stop part is used for pushing the non-edge baffle units to enable all baffle units to be overlapped with the second edge baffle unit, so that the projection area of the baffle module on the surface of the wafer is reduced.

9. The process chamber of claim 5, wherein the shower plate is connected to a vent valve, the vent valve being connected to a plurality of reactant gas sources; the ventilation valve is used for switching a reaction gas source communicated with the spray plate in different time periods so as to enable the surface of the wafer to deposit a dielectric film layer or a metal film.

10. The process chamber of claim 9, wherein the drive unit and the vent valve are each electrically connected to a control unit;

the control unit is used for controlling the driving unit and the ventilation valve to be matched so as to deposit or etch in different areas on the surface of the wafer.

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