CN219032356U - Semiconductor process chamber - Google Patents

Abstract

The utility model provides a semiconductor process chamber, comprising: a chamber, a spray plate, a baffle module and a base; the chamber is used to accommodate the spray plate, the baffle module and the base ; the base is used to carry the wafer; the spray plate is connected with the reaction gas source, and is used to spray the reaction gas to the wafer; the baffle module is arranged between the spray plate and the crystal Between the circles, it is used to block the reaction gas from flowing to the protected area of the wafer. The process chamber is used to deposit or etch a film layer outside the protected area of the wafer surface.

Description

Semiconductor process chamber

technical field

The utility model relates to the field of semiconductor technology, in particular to a semiconductor technology chamber.

Background technique

The conventional complementary metal oxide semiconductor (CMOS) film formation process is to form a film in the process chamber at one time, and realize a uniform film with consistent film thickness and material on the surface of the wafer, which is necessary in the mass production process .

At present, in the multi-project wafer (Multi Project Wafer, MPW) or in the early process and device development process, it is necessary to adjust the film thickness and materials at different levels to perform device performance adjustment and product development, requiring a large number of process groups For experiments, especially for 12-inch wafer process development, the cost of the wafer is expensive and the process cost is high. Therefore, there is an urgent need for a new type of semiconductor process chamber to improve the above problems.

Utility model content

The purpose of the utility model is to provide a semiconductor process chamber, which is used for depositing or etching a film outside the wafer surface protection area.

In the first aspect, the utility model provides a semiconductor process chamber, which is used to deposit a film layer or etch a film layer on the surface of a wafer, including: a chamber, a shower plate, a baffle module and a base; for accommodating the shower plate, the baffle module and the base; the base is used to carry the wafer; the shower plate communicates with the reaction gas source and is used to spray the reaction gas to the wafer The baffle module is arranged between the shower plate and the wafer, and is used to block the reaction gas from flowing to the protection area of the wafer; the area of the protection area is smaller than the area of the wafer.

The beneficial effect of the device of the utility model is that: the utility model is provided between the spray plate and the wafer through the baffle module, which can block the reaction gas from flowing to the protection area of the wafer; the protection The area of the region is smaller than the area of the wafer. The utility model realizes the shielding of the protection area of the wafer, prevents the protection area from contacting with the reaction gas, facilitates the development of multi-item wafers, prevents the mutual interference of each item process on the same multi-item wafer, and is conducive to improving the film formation yield .

Optionally, the baffle module includes at least one baffle unit; the baffle unit is arranged in a fan shape; a plurality of the baffle units are stacked, and the adjacent baffle units are movably connected. The beneficial effect is that the baffle units provided in the present application are fan-shaped; multiple baffle units are stacked, and adjacent baffle units are rotationally connected. In the present application, the size of the baffle module can be adjusted by rotating the baffle unit to meet the requirements of different protection areas of the corresponding wafer.

Optionally, the side of the baffle module close to the wafer is provided with an air outlet; the inner side of the baffle module is provided with a cavity; the cavity is used to communicate with the air outlet and an inert gas source, so that the baffle module blows the inert gas to the wafer. Its beneficial effect is that the present application connects the air outlet and the inert gas source through the cavity, so that the baffle unit can purge the inert gas to the wafer, avoiding the contact of the reactive gas with the protected area of the wafer, which is beneficial to Reduce the interference between process steps and ensure the yield of the film layer.

Optionally, a track is provided in the chamber; the track is slidably connected to the baffle module, and is used to support the baffle module, so that the baffle module can move along the track when it is stressed .

Optionally, the baffle module is connected with a drive unit; when the drive unit is in a working state, it is used to drive the baffle module to move.

Optionally, when the projected area of the baffle module on the wafer surface is the smallest, the projected area of the baffle module on the wafer surface is the same as the projected area of one baffle unit on the wafer surface.

Optionally, the adjacent baffle units are provided with first stoppers; the first stoppers are used to limit the relative rotation angles of the adjacent baffle units.

Optionally, the baffle unit located at the edge of the baffle module is provided with a second stopper; the first edge baffle unit and the second edge baffle unit are both connected with the second stopper. When the first edge baffle unit drives the second stop portion close to the second edge baffle unit, the second stop portion is used to push the non-edge baffle units so that all the baffle units are aligned with the second edge The baffle units overlap to reduce the projected area of the baffle module on the wafer surface.

Optionally, the spray plate is connected with a vent valve, and the vent valve is connected with several reaction gas sources; the vent valve is used to switch the reaction gas sources communicated with the spray plate in different time periods, so that the Deposit a dielectric film or metal film on the surface of the wafer.

Optionally, both the drive unit and the vent valve are electrically connected to a control unit; the control unit is used to control the cooperation between the drive unit and the vent valve to deposit or etch on different regions of the wafer surface.

Description of drawings

Fig. 1 is a schematic structural view of a process chamber in which a baffle module provided by the present invention is arranged in a quarter fan shape;

Fig. 2 is a schematic structural view of a process chamber in which a baffle module is arranged in a semicircle according to the utility model;

Fig. 3 is a structural schematic diagram of a process chamber in which the baffle module is provided in a three-quarter fan shape provided by the present invention;

Fig. 4 is a schematic structural diagram of a foldable baffle module provided by the present invention;

Fig. 5 is a structural schematic diagram of a baffle module provided with an air outlet provided by the utility model;

Fig. 6 is a structural schematic diagram of a process chamber provided with a track provided by the utility model;

Fig. 7 is a structural schematic diagram of a baffle module provided with a stopper provided by the utility model;

Fig. 8 is the structural representation of the A-A section of Fig. 7 of the utility model;

Fig. 9 is a structural schematic diagram of a process chamber provided with a drive unit and a vent valve provided by the utility model;

FIG. 10 is a structural schematic diagram of a wafer with different thicknesses of deposited films in each region provided by the present invention;

FIG. 11 is a structural schematic diagram of a wafer with different deposited film materials in each region provided by the present invention;

FIG. 12 is a schematic structural diagram of a wafer with different film layers stacked according to the present invention.

Labels in the figure:

1. Chamber; 2. Spray plate; 31. First baffle module; 32. Second baffle module; 33. Third baffle module; 340. Baffle unit; 341. First stop 342, the second stop portion; 343, the first edge baffle unit; 344, the second edge baffle unit; 35, the air outlet; 36, the cavity; 4, the base; 41, the track; 42, the wafer ; 421, notch; 5, reaction gas source; 6, inert gas source; 7, drive unit; 8, ventilation valve; 9, control unit.

Detailed ways

In order to make the purpose, technical solutions and advantages of the utility model clearer, the technical solutions in the embodiments of the utility model will be clearly and completely described below in conjunction with the accompanying drawings of the utility model. Obviously, the described embodiments are the Some embodiments of the utility model, but not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other elements or items.

Fig. 1 is a structural schematic diagram of a process chamber in which the baffle module is arranged in a quarter sector shape provided by the present invention.

Aiming at the problems existing in the prior art, as shown in FIG. 1, this embodiment provides a semiconductor process chamber for depositing or etching a film on the surface of a wafer 42, including: a chamber 1, a shower plate 2. Baffle module and base4. The chamber 1 is used to accommodate the shower plate 2 , the baffle module and the base 4 . The base 4 is used to carry a wafer 42 . The shower plate 2 communicates with a reactive gas source for spraying the reactive gas onto the wafer 42 . The baffle module is disposed between the shower plate 2 and the wafer 42 for blocking reaction gas from flowing to the protected area of the wafer 42 . The area of the protection area is smaller than or equal to the area of the wafer 42 .

Specifically, the baffle module is configured as a first baffle module 31 . The first baffle module 31 is arranged in a quarter fan shape. The axis of the first baffle module 31 is located on the same vertical line as the center of the wafer 42 . The protection area is located right below the first baffle module 31 and occupies a quarter of the area of the wafer 42 .

Fig. 2 is a schematic structural diagram of a process chamber in which the baffle module is provided in a semicircle according to the present invention.

As shown in FIG. 2 , in some other specific embodiments, the baffle module is set as a second baffle module 32 . The second baffle module 32 is arranged in a half sector column shape. The axis of the second baffle module 32 is located on the same vertical line as the center of the wafer 42 . The protection area is located right below the second barrier module 32 and occupies half of the area of the wafer 42 .

Fig. 3 is a structural schematic diagram of a process chamber provided by the utility model in which the baffle module is arranged in a three-quarter sector shape.

As shown in FIG. 3 , in some specific embodiments, the baffle module is set as a third baffle module 33 . The third baffle module 33 is arranged in a three-quarter fan-shaped column shape. The axis of the third baffle module 33 is located on the same vertical line as the center of the wafer 42 . The protection area is located right below the third baffle module 33 and occupies three quarters of the area of the wafer 42 .

In some other embodiments, the baffle module can be arranged in any shape, as long as the baffle module can cover the protection area of the wafer 42 .

It is worth noting that the present invention can block the reaction gas from flowing to the protection area of the wafer 42 by setting the baffle plate module between the shower plate 2 and the wafer 42 . The area of the protection area is smaller than or equal to the area of the wafer 42 . The utility model realizes the shielding of the protection area of the wafer 42, prevents the protection area from contacting the reaction gas, facilitates the development of multi-item wafers, prevents the mutual interference of each item process on the same multi-item wafer, and is conducive to improving the film forming quality. Rate. This application enables one process experiment to realize multiple grouping conditions on one silicon chip, such as deposition of the same material with different film thicknesses, and deposition of films with different materials and different film thicknesses. At the same time, the application can realize the grouping of different regions and region shapes through the design of the baffle, which is convenient for subsequent testing.

It should be understood that the process chamber of the present application can be used to deposit a dielectric film layer and a metal film on the wafer surface, and can also be used for a dry etching process; the deposited dielectric film layer includes a low dielectric constant (Low-K) film , dielectric antireflective coating (Dielectric Anti Reflective Coating, DARC), metal thin film and metal hydride thin film; The dielectric antireflective coating includes inorganic dielectric antireflective coating (N-free DARC, N -free DielectricAnt1-reflective Coating); The metal film includes aluminum (Al) film, titanium (Ti) film, tantalum (Ta) film; the metal hydride film includes potassium hydride (HK) film. The dry etching process includes silicon etching and metal etching.

Fig. 4 is a schematic structural diagram of a foldable baffle module provided by the present invention.

As shown in FIGS. 1 and 4 , in some embodiments, the baffle module includes at least one baffle unit 340 . The baffle units 340 are fan-shaped. A plurality of baffle units 340 are stacked, and adjacent baffle units 340 are movably connected. The beneficial effect is that the baffle units 340 provided in this embodiment are fan-shaped. A plurality of baffle units 340 are stacked, and adjacent baffle units 340 are movably connected. In this embodiment, the size of the baffle module can be adjusted by rotating the baffle unit 340 to meet the requirements of different protection areas of the corresponding wafer 42 .

Specifically, the baffle module is set as a fourth baffle module. The fourth baffle module is configured as 12 stacked baffle units 340 arranged in fan-shaped columns. The axis of each baffle unit 340 is located on the same vertical line as the center of the wafer 42 . The protection area is located right below the fourth baffle module. In this embodiment, by controlling the rotation angle of the adjacent baffle units 340 , it is possible to control the area of the wafer 42 occupied by the protection area to be in the range from one-twelfth of the area of the wafer 42 to one of the area of the wafer 42 .

In other specific embodiments, the number of the baffle units 340 can be set to any positive integer. The shape of the baffle unit 340 can be set in any three-dimensional geometric shape.

Fig. 5 is a schematic structural diagram of a baffle module provided with air outlets provided by the present invention.

As shown in FIGS. 3 and 5 , in some embodiments, an air outlet 35 is opened on a side of the baffle module close to the wafer 42 . A cavity 36 is provided inside the baffle module. The cavity 36 is used to communicate with the gas outlet 35 and the source of the inert gas, so that the baffle module blows the inert gas to the wafer 42 . Its beneficial effect is that, in this embodiment, the air outlet 35 and the inert gas source are connected through the cavity 36, so that the baffle unit 340 can purge the inert gas to the wafer 42, avoiding the reaction gas and the wafer 42. The contact of the protected area is beneficial to reduce the interference between process steps and ensure the yield of the film layer.

Specifically, an air outlet 35 is provided at the edge of the bottom side of the third baffle module 33 .

In other specific embodiments, the air outlet 35 is provided on the bottom surface of each baffle unit 340 of the fourth baffle module. The air outlets 35 are evenly distributed on the bottom surface of the baffle unit 340 .

In still some specific embodiments, the air outlet 35 may also be provided on the first baffle module 31 and the second baffle module 32 . The air outlet holes 35 can be distributed on the side of the baffle module close to the wafer 42 in any form, as long as the inert gas purged by the air outlet holes 35 can cover or surround the protection area.

Fig. 6 is a schematic structural view of a process chamber provided with rails provided by the present invention.

As shown in FIG. 6 , in some embodiments, a track 41 is provided inside the chamber 1 . The rail 41 is slidably connected with the baffle module, and is used to support the baffle module, so that the baffle module can move along the rail 41 when it is stressed.

Specifically, the track 41 is fixedly connected to the top surface of the base 4 . The track 41 is circular. The top end of the track 41 is rotatably connected with the bottom end of the baffle module. When the baffle module is under force, the baffle module rotates relative to the wafer 42 .

In other specific embodiments, the track 41 is detachably connected to the top surface of the base 4 . The track 41 is fan-shaped. The top end of the track 41 is rotatably connected with the bottom end of the baffle module. When the baffle module is stressed, the projected profile of the baffle module on the wafer surface changes, so as to change the area of the protection area.

In still some specific embodiments, the track 41 may be provided on the inner wall of the chamber 1 , and the inner side of the track 41 is rotatably connected with the outer side of the baffle module. When the baffle module is under force, the baffle module moves along the track 41 , and at the same time, the projection profile of the baffle module on the wafer surface changes, so as to change the area of the protection area.

It is worth noting that the support of the rail 41 to the baffle module can be a discontinuous point support or a continuous surface support.

In some embodiments, the baffle module is connected with a driving unit 7 . When the driving unit 7 is in working state, it is used to drive the movement of the baffle module.

Specifically, the drive unit 7 is configured as a motor. The main shaft of the motor is fixedly connected with the baffle module. When the main shaft of the motor rotates, it drives the baffle module to rotate.

In other specific embodiments, the drive unit 7 is configured as a first motor and a second motor, and the first motor and the second motor are respectively fixedly connected to different baffle units 340 . In this embodiment, the first motor and the second motor are respectively fixedly connected to different baffle units 340, which facilitates the relative rotation of different baffle units 340, and can realize the positioning of the baffle module on the wafer surface. The projection profile changes.

In some embodiments, when the projected area of the baffle module on the wafer surface is the smallest, the projected contour of the outer contour is the same as the projected contour of one baffle unit 340 on the wafer surface.

Specifically, the size of each of the baffle units 340 is the same. The minimum area of the outer contour of the baffle module in the direction perpendicular to the wafer 42 is the same as the projected contour of one baffle unit 340 on the wafer surface.

In other specific embodiments, the size of each baffle unit 340 may be different. The projection profile of the baffle module on the wafer surface is the same as the projection profile of the largest baffle unit 340 on the wafer surface.

Fig. 7 is a schematic structural view of a baffle module provided with a stopper provided by the present invention. Fig. 8 is a structural schematic diagram of the section A-A of Fig. 7 of the present invention.

As shown in FIG. 7 , in some embodiments, adjacent baffle units 340 are provided with first stoppers 341 . The first stop portion 341 is used to limit the relative rotation angle of the adjacent baffle units 340 .

Specifically, the first stop portion 341 is arranged in a strip shape on the radial side of the baffle unit 340 , and protrudes toward a direction perpendicular to the surface of the wafer 42 . For every two adjacent baffle units 340, the first stop portion 341 connected to the second direction of the baffle unit 340 on the side of the first direction is connected to the first direction of the baffle unit 340 on the side of the second direction. When the connected first stoppers 341 are attached, the distance between the centers of the two adjacent baffle units 340 is at the farthest. In this embodiment, the provided first stop portion 341 prevents two adjacent baffle units 340 from being separated too far, causing the reactant gas to pass through the gap between the two baffle units 340 and contact the protected area on the surface of the wafer 42 .

In some other embodiments, the first stop portion 341 can be set in any shape, and can be set at any position of the baffle unit 340 .

As shown in FIG. 7 and FIG. 8 , in some embodiments, both the first edge baffle unit 343 and the second edge baffle unit 343 are connected with a second stop portion 342 . When the first edge baffle unit 343 drives the second stop portion 342 close to the second edge baffle unit, the second stop portion 342 can touch and push the non-edge baffle units, so that all the baffles The units overlap with the second edge baffle unit 343 to reduce the projected area of the baffle module on the wafer surface.

Specifically, the second stop portion 342 is provided at the first edge baffle unit 343 of the baffle module. The height of the second stop portion 342 is greater than the sum of the heights of all the baffle units 340 of the baffle module. The height is a dimension in a direction perpendicular to the surface of the wafer 42 . When the second stop portion 342 moves toward the second direction, the second stop portion 342 drives the baffle unit 340 that it touches to move toward the second direction.

In some other specific embodiments, the second stop portion 342 is disposed at the second edge baffle unit 344 of the baffle module. The height of the second stop portion 342 is greater than the sum of the heights of all the baffle units 340 of the baffle module. The height is a dimension in a direction perpendicular to the surface of the wafer 42 . When the second stop portion 342 moves toward the first direction, the second stop portion 342 drives the baffle unit 340 that it touches to move toward the first direction.

Fig. 9 is a schematic structural diagram of a process chamber provided with a drive unit and a vent valve provided by the present invention.

As shown in FIG. 9 , in some embodiments, the shower plate 2 is connected with a vent valve 8 , and the vent valve 8 is connected with several reaction gas sources 5 . The ventilation valve 8 is used to switch the reaction gas source 5 communicated with the shower plate 2 in different time periods, so as to deposit a dielectric film or a metal film on the surface of the wafer 42 .

In some embodiments, both the driving unit 7 and the ventilation valve 8 are electrically connected to a control unit 9 . The control unit 9 is used to control the cooperation between the driving unit 7 and the ventilation valve 8 to deposit or etch on different areas on the surface of the wafer 42 .

Specifically, the control unit 9 is configured as a processor. The processor is used to control the ventilation valve 8 to select the reaction gas source 5 connected to the shower plate 2 , and to control the time period for connecting the reaction gas source 5 . The processor is also used for the driving unit 7 to drive the rotation angle of the baffle module.

As shown in Figures 5 and 9, in some other specific embodiments, before the wafer 42 enters the chamber 1, an inert gas is introduced into the cavity 36 of the baffle module, and the control unit 9 is used to Set the flow rate of the inert gas sprayed from the air outlet 35 of the baffle module to the base 4 .

FIG. 10 is a schematic structural diagram of a wafer with different deposited film thicknesses in each region provided by the present invention.

As shown in FIGS. 4 and 10 , specifically, the baffle module is configured as the fourth baffle module. Firstly, the rotating baffle unit 340 adjusts the protection area so that within the first period, the protection area includes the second area, the third area and the fourth area, and the surface of the wafer 42 in the first area grows film layer. Then, the rotating baffle unit 340 adjusts the protection area, so that in the second period, the protection area includes the third area and the fourth area, and the film layer on the surface of the wafer 42 in the first area grows to Wafer 42 surface growth in the second region film layer. Secondly, the rotating baffle unit 340 adjusts the protection area, so that in the third period, the protection area includes the fourth area, and the film layer on the surface of the wafer 42 in the first area grows to The film layer on the surface of the wafer 42 in the second region grows to Wafer 42 surface growth in the third region film layer. Finally, the rotating baffle unit 340 adjusts the protection area so that in the fourth period, the protection area includes the first area, the second area and the third area, and the surface of the wafer 42 in the fourth area grows film layer. In this embodiment, film layers with different thicknesses can be deposited in four different regions in one process.

As shown in FIGS. 9 and 10 , in other specific embodiments, before the wafer 42 enters the chamber 1 , the wafer 42 is etched to form notches 421 on the surface of the wafer 42 . The control unit 9 is also configured to determine the positions of each area in the process menu according to the position of the notch 421 .

FIG. 11 is a schematic structural diagram of a wafer with different deposited film materials in each region provided by the present invention.

As shown in FIGS. 3 and 11 , in other specific embodiments, the baffle module is configured as the third baffle module 33 . First, the third baffle module 33 is rotated to adjust the protection area, so that in the first period, the protection area includes the second area, the third area and the fourth area, and a titanium nitride film is grown on the surface of the wafer 42 in the first area. layer. Then, the third baffle module 33 is rotated to adjust the protection area, so that in the second period, the protection area includes the first area, the third area and the fourth area, and a titanium film layer is grown on the surface of the wafer 42 in the second area. Secondly, the third baffle module 33 is rotated to adjust the protection area, so that in the third period, the protection area includes the first area, the second area and the fourth area, and the aluminum film layer is grown on the surface of the wafer 42 in the third area. Finally, rotate the third baffle module 33 to adjust the protection area, so that in the fourth period, the protection area includes the first area, the second area and the third area, and the surface of the wafer 42 in the fourth area grows titanium and nitride Titanium mixture film layer.

FIG. 12 is a schematic structural diagram of a wafer with different film layers stacked according to the present invention.

As shown in FIGS. 1 and 12 , in still some specific embodiments, the baffle module is configured as the first baffle module 31 . After the wafer 42 enters the chamber 1, the first baffle module 31 is moved to the first area of the wafer 42 to complete the silicon dioxide film deposition in other areas except the first area, and then the first baffle The plate module 31 is moved to the second area to complete the silicon nitride film deposition in other areas except the second area, and then the first baffle module 31 is moved to the third area to complete the deposition of the silicon nitride film in other areas except the third area. Silicon dioxide film layer deposition in other areas. This embodiment can realize stacking of different film layers.

It is worth noting that the baffle module can be set in any shape. The thickness of the film layer grown on the surface of the wafer 42 depends on the flow rate of the shower plate 2 , the position of the protection area and the continuous spraying time of the reaction gas to the wafer 42 . The composition of the film layer grown on the surface of the wafer 42 depends on the type of the reaction gas source 5 connected to the vent valve 8 . The reactive gas provided by the reactive gas source 5 to the shower plate 2 can also be used to etch the surface of the wafer 42 , so that this embodiment can realize the etching of the wafer 42 in the non-protected area.

Although the embodiments of the present invention have been described in detail above, it is obvious for those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes belong to the scope and spirit of the present invention described in the claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or carried out in various ways.

Claims (10)

1. A semiconductor process chamber, used for depositing a film layer or etching a film layer on a wafer surface, is characterized in that, comprising: Chambers, shower panels, baffle modules and bases; The chamber is used to accommodate the shower plate, the baffle module and the base; The base is used to carry a wafer; The shower plate is in communication with a reaction gas source, and is used for spraying reaction gas to the wafer; The baffle module is arranged between the shower plate and the wafer, and is used to block reaction gas from flowing to the protection area of the wafer. 2. The process chamber according to claim 1, wherein the baffle module comprises at least one baffle unit; The baffle unit is fan-shaped; A plurality of said baffle units are stacked, and adjacent said baffle units are movably connected. 3. The process chamber according to claim 1, wherein an air outlet is provided on a side of the baffle module close to the wafer; The inside of the baffle module is provided with a cavity; the cavity is used to communicate with the air outlet and an inert gas source, so that the baffle module can purge the inert gas to the wafer. 4. The process chamber according to claim 1, wherein a track is provided in the chamber; the track is slidably connected with the baffle module and used to support the baffle module so that the baffle The plate module can move along the track when stressed. 5. The process chamber according to claim 1, wherein the baffle module is connected with a drive unit; When the drive unit is in working state, it is used to drive the baffle module to move. 6. The process chamber according to claim 2, wherein when the projected area of the baffle module on the wafer surface is the smallest, the projected area of the baffle module on the wafer surface is the same as one of the baffles. The projected area of the plate unit on the wafer surface is the same. 7. The process chamber according to claim 2, wherein adjacent said baffle units are provided with first stoppers; said first stoppers are used to limit the adjacent said baffle units relative rotation angle. 8. The process chamber according to claim 2, wherein the first edge baffle unit and the second edge baffle unit are connected with a second stopper; when the first edge baffle unit drives the second When the stopper is close to the second edge baffle unit, the second stopper is used to push the non-edge baffle units so that all the baffle units overlap with the second edge baffle unit, so that the baffle mold The projected area of the group on the wafer surface is reduced. 9. The process chamber according to claim 5, characterized in that, the spray plate is connected with a vent valve, and the vent valve is connected with several reaction gas sources; A reaction gas source connected to the shower plate, so as to deposit a dielectric film layer or a metal film on the surface of the wafer. 10. The process chamber according to claim 9, characterized in that, both the drive unit and the vent valve are electrically connected to a control unit; The control unit is used to control the cooperation of the driving unit and the ventilation valve to deposit or etch on different areas of the wafer surface.

Images