CN219014336U - Reaction cavity applied to semiconductor waste gas treatment - Google Patents

Abstract

The utility model relates to the technical field of semiconductor waste gas treatment, and provides a reaction cavity applied to semiconductor waste gas treatment, which comprises: the columnar body is provided with a reaction chamber, a heat source mounting port communicated with the reaction chamber, an exhaust gas diversion channel and an exhaust channel; the heat source installation opening is arranged at the first end of the columnar body, a plurality of exhaust gas diversion channels are arranged, and the exhaust gas diversion channels are arranged along the circumferential direction of the heat source installation opening; the air inlet end of the exhaust gas diversion channel is arranged at the first end of the columnar body, and the extending direction of the air outlet end of the exhaust gas diversion channel is obliquely arranged relative to the central axis of the heat source mounting port; the air inlet end of the exhaust channel and the air outlet end of the exhaust diversion channel are respectively arranged on the opposite sides of the reaction chamber, and the air outlet end of the exhaust channel is arranged at the second end of the columnar body. The utility model not only can reduce the occupied space of the ventilation structure corresponding to the reaction cavity, but also improves the treatment effect of semiconductor waste gas.

Description

Reaction cavity applied to semiconductor waste gas treatment

Technical Field

The utility model relates to the technical field of semiconductor waste gas treatment, in particular to a reaction cavity applied to semiconductor waste gas treatment.

Background

The semiconductor industry continues to produce semiconductor exhaust gases during production, which are mostly serious to the human body and the environment, and thus exhaust gas treatment devices are an integral part of the production of the industry. The existing processes for treating the semiconductor waste gas comprise an adsorption method, an absorption method, a direct combustion method, a catalytic combustion method, a condensation method and the like. In the catalytic combustion method widely used, the reaction chamber is a device for reacting semiconductor waste gas, and can accelerate the complete combustion of the semiconductor waste gas.

Currently, a reaction chamber applied to semiconductor waste gas treatment occupies a large area and has poor treatment effect on semiconductor waste gas.

Disclosure of Invention

The utility model provides a reaction cavity applied to semiconductor waste gas treatment, which is used for solving the problems of large occupied area and poor treatment effect on semiconductor waste gas in the existing waste gas reaction cavity.

The utility model provides a reaction cavity applied to semiconductor waste gas treatment, which comprises a columnar body, wherein the columnar body is provided with a reaction cavity, a heat source mounting port communicated with the reaction cavity, a waste gas diversion channel and an exhaust channel;

the heat source installation opening is arranged at the first end of the columnar body, a plurality of exhaust gas diversion channels are arranged, and the exhaust gas diversion channels are arranged along the circumferential direction of the heat source installation opening;

the air inlet end of the exhaust gas diversion channel is arranged at the first end of the columnar body, and the extending direction of the air outlet end of the exhaust gas diversion channel is obliquely arranged relative to the central axis of the heat source mounting port;

the air inlet end of the exhaust channel and the air outlet end of the exhaust diversion channel are respectively arranged on opposite sides of the reaction chamber, and the air outlet end of the exhaust channel is arranged at the second end of the columnar body.

According to the reaction cavity for treating semiconductor waste gas, the heat source mounting port is arranged along the central axis of the columnar body, and the waste gas diversion channels are uniformly distributed along the circumferential direction of the heat source mounting port;

the extending directions of the air outlet ends of the exhaust gas diversion channels are intersected at a first position, the first position is located in the reaction chamber, and the first position is distributed on the central axis of the columnar body.

According to the reaction cavity applied to semiconductor waste gas treatment provided by the utility model, the waste gas diversion channel is a waste gas diversion pipe; and/or the exhaust gas diversion channel extends into an arc channel along the arc track.

According to the reaction cavity applied to semiconductor waste gas treatment, the columnar body is further provided with a plurality of catalytic gas inlets;

the catalytic gas inlets are arranged along the circumferential direction of the heat source mounting opening, and the catalytic gas inlets and the exhaust gas diversion channels are arranged in a one-to-one opposite manner;

the gas inlet end of the catalytic gas inlet is arranged at the first end of the columnar body, and the gas outlet end of the catalytic gas inlet is communicated with the gas outlet end of the waste gas diversion channel.

According to the reaction cavity applied to semiconductor waste gas treatment provided by the utility model, the exhaust channel comprises a tapered section, a throat section and a divergent section;

the convergent section the throat section with the divergent section connects gradually, the convergent section keep away from the one end of throat section with the reaction chamber intercommunication, the divergent section is kept away from the one end of throat section is located the second end of column body.

According to the reaction chamber for semiconductor waste gas treatment provided by the utility model, the exhaust channel extends along the central axis of the columnar body and is arranged in a central symmetry manner relative to the central axis of the columnar body;

the included angle of the side wall of the gradually-reduced section relative to the central axis of the columnar body is smaller than the included angle of the side wall of the gradually-expanded section relative to the central axis of the columnar body.

According to the reaction chamber applied to semiconductor waste gas treatment provided by the utility model, the columnar body comprises a shell component and a heat insulation lining;

the shell assembly and the heat insulation bushing are coaxially arranged, and the heat insulation bushing is detachably arranged in the shell assembly; the heat source mounting port, the waste gas diversion channel, the reaction chamber and the exhaust channel are respectively arranged on the heat insulation lining.

According to the reaction chamber applied to semiconductor waste gas treatment provided by the utility model, the shell assembly comprises an inner shell and an outer shell;

the inner shell is arranged on the inner side of the outer shell so as to form an interlayer space between the inner shell and the outer shell; the heat insulation lining is arranged in the inner shell;

the bottom of the shell assembly is provided with a fluid inlet, the top of the shell assembly is provided with a fluid outlet, and the fluid inlet and the fluid outlet are respectively communicated with the interlayer space.

According to the reaction chamber applied to semiconductor waste gas treatment provided by the utility model, the shell assembly further comprises a first flange and a second flange;

the first flange is arranged between the first end of the inner shell and the first end of the outer shell; the second flange is disposed between the second end of the inner housing and the second end of the outer housing.

According to the reaction cavity applied to semiconductor waste gas treatment provided by the utility model, the shell assembly further comprises a guide plate and a supporting plate;

the guide plate is provided with a plurality of guide openings, and the guide openings and the air inlet ends of the waste gas guide channels are arranged in a one-to-one opposite mode; the guide plate is abutted to the first end of the heat insulation lining, and the supporting plate is abutted to the second end of the heat insulation lining.

According to the reaction cavity for treating the semiconductor waste gas, the heat source mounting port and the waste gas flow guide channel are arranged at the first end of the columnar body, so that the external semiconductor waste gas introduction pipeline and the heat source can be arranged at the first end of the columnar body, the external semiconductor waste gas introduction pipeline can be arranged as compactly as possible, and the occupied space of a ventilation structure corresponding to the reaction cavity is reduced; and through setting up a plurality of waste gas water conservancy diversion passageways along the circumference of heat source installing port to the extending direction that makes the end of giving vent to anger of waste gas water conservancy diversion passageway sets up for the axis slope of heat source installing port, can make the semiconductor waste gas that lets in from all directions towards reaction chamber in all gather towards the propagation direction of heat source flame obliquely, and the product after the semiconductor waste gas burning can arrange along the exhaust passage rapidly, and this kind of arrangement structure has both ensured the stability that semiconductor waste gas burnt, has improved the combustion efficiency of semiconductor waste gas again, thereby reaches better treatment effect to semiconductor waste gas.

Drawings

In order to more clearly illustrate the utility model or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the utility model, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view of a reaction chamber for semiconductor exhaust treatment according to the present utility model;

FIG. 2 is a partial cross-sectional view of a reaction chamber for semiconductor exhaust treatment according to the present utility model;

FIG. 3 is a half cross-sectional view of a reaction chamber for semiconductor exhaust treatment according to the present utility model;

reference numerals:

1. a columnar body;

11. a reaction chamber; 12. a heat source mounting port; 13. an exhaust gas diversion channel;

14. an exhaust passage; 141. a tapered section; 142. a laryngeal section; 143. a divergent section;

15. a catalytic gas inlet;

16. a housing assembly; 161. an inner housing; 162. an outer housing; 163. a first flange; 164. a second flange; 165. a deflector; 1651. a diversion port; 166. a supporting plate;

17. and (5) insulating the lining.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

The reaction chamber for treating semiconductor waste gas provided by the embodiment of the utility model is described in detail below with reference to fig. 1 to 3 by means of a specific embodiment and an application scenario thereof.

In some embodiments, as shown in fig. 1 to 3, the present embodiment provides a reaction chamber for semiconductor waste gas treatment, which comprises a column body 1, wherein the column body 1 is provided with a reaction chamber 11, a heat source mounting port 12 communicated with the reaction chamber 11, a waste gas diversion channel 13 and an exhaust channel 14.

The heat source mounting port 12 is disposed at a first end of the columnar body 1, the exhaust gas diversion channel 13 is provided with a plurality of exhaust gas diversion channels 13, and the plurality of exhaust gas diversion channels 13 are disposed along a circumferential direction of the heat source mounting port 12.

The air inlet end of the exhaust gas diversion channel 13 is arranged at the first end of the columnar body 1, and the extending direction of the air outlet end of the exhaust gas diversion channel 13 is obliquely arranged relative to the central axis of the heat source mounting opening 12.

The air inlet end of the air exhaust channel 14 and the air outlet end of the exhaust gas diversion channel 13 are respectively arranged at the opposite sides of the reaction chamber 11, and the air outlet end of the air exhaust channel 14 is arranged at the second end of the columnar body 1.

It is understood that the heat source mounting port 12 refers to a mounting portion for providing a heat source for a combustion reaction of semiconductor waste gas in the reaction chamber 11 during the process of treating the semiconductor waste gas, so that the heat source may be provided based on the heat source mounting port 12, and the heat source may be a plasma torch, a gas torch, or a heating rod, which is not particularly limited.

Specifically, the exhaust gas diversion channel 13 of the present embodiment is disposed between the first end of the columnar body 1 and the wall surface of the side of the reaction chamber 11 facing away from the exhaust channel 14, and the exhaust gas diversion channel 13 may be a natural channel configured in the columnar body 1 or a steel pipe embedded in the columnar body 1.

Further, as shown in fig. 3, in this embodiment, by setting the extending direction of the air outlet end of the exhaust gas diversion channel 13 to form an α angle with the central axis of the heat source mounting port 12 and to face the second end of the columnar body 1, the air outlet end of the exhaust gas diversion channel 13 can be ensured to face the high temperature or concentrated position of the heat source in the reaction chamber 11, so that the combustion reaction effect in the reaction chamber 11 is better.

In the prior art, the existing reaction chamber is also provided with a plurality of exhaust gas diversion channels 13, the inlet end of each exhaust gas diversion channel 13 is usually arranged on the side wall of the columnar body 1, and the outlet end of the exhaust gas diversion channel 13 extends to the reaction chamber 11 of the columnar body 1 along the radial direction. However, based on this arrangement, the external semiconductor exhaust gas introduction pipe can be arranged only along the circumferential direction of the reaction chamber, occupying a large amount of circumferential space of the reaction chamber.

In contrast, in this embodiment, by arranging the exhaust gas guiding channels 13 at the first end of the columnar body 1, the external semiconductor exhaust gas introducing pipes communicated with each exhaust gas guiding channel 13 can be distributed at the first end of the columnar body 1, which is beneficial to realizing centralized arrangement of each external semiconductor exhaust gas introducing pipe, so that compared with the existing arrangement scheme of each external semiconductor exhaust gas introducing pipe, the occupation of the space around the reaction cavity is obviously reduced.

Meanwhile, when the semiconductor waste gas enters the reaction chamber 11 from the waste gas diversion channel 13 and flows towards the second end of the columnar body 1, the extending direction of the air outlet end of the waste gas diversion channel 13 forms an alpha included angle with the central axis of the heat source mounting port 12. The heat source in the heat source mounting port 12 fires a small portion of the semiconductor exhaust gas to form a localized flame, which then propagates at a propagation velocity to burn the semiconductor exhaust gas throughout the reaction chamber 11. The arrangement ensures that the combustion speed of the semiconductor waste gas is high, the combustion stability of the semiconductor waste gas is good, the semiconductor waste gas is not easy to temper and is not easy to take off fire, and the combustion effect is good, because the flow direction of the semiconductor waste gas gathers towards the high temperature area of the flame generated by the heat source in the heat source mounting port 12 and extends towards the second end of the columnar body 1 together with the flame.

Further, in the prior art, the extending direction of the existing exhaust gas guiding channel 13 is generally perpendicular to the central axis of the columnar body 1, so that the direction of the semiconductor exhaust gas introduced into the reaction cavity is perpendicular to the propagation direction of the heat source flame in the reaction cavity, which results in uneven distribution of the velocity field of the semiconductor exhaust gas, large flow resistance of the semiconductor exhaust gas, difficulty in ensuring the combustion stability of the semiconductor exhaust gas, and easy occurrence of combustion flameout when the flow velocity of the semiconductor exhaust gas introduced is too fast.

In contrast, compared with the prior art, the present embodiment is based on the communication flow channel formed by the exhaust gas diversion channel 13, the reaction chamber 11 and the exhaust gas channel 14, which is not only helpful for reducing the flow resistance of the semiconductor exhaust gas, but also for ensuring the combustion stability of the semiconductor exhaust gas.

It should be noted that the present embodiment is based on the treatment of the semiconductor exhaust gas by the reaction chamber, which is essentially a combustion treatment of the semiconductor exhaust gas in the reaction chamber 11. In the process of treating semiconductor waste gas, the semiconductor waste gas enters the reaction chamber 11 through the waste gas diversion channel 13 through an external semiconductor waste gas introduction pipeline; at the same time, the high temperature heat source provided at the heat source mounting port 2 ignites the semiconductor waste gas, and the high temperature combustion reaction is performed in the reaction chamber 11, so that the semiconductor waste gas is completely combusted; finally, the gas and dust after the combustion reaction are discharged from the second end of the columnar body 1 through the exhaust passage 14.

As can be seen from the above, the reaction chamber for semiconductor waste gas treatment provided by the present utility model, by arranging the heat source mounting port 12 and the waste gas guiding channel 13 at the first end of the columnar body 1, can perform the arrangement of the external semiconductor waste gas introducing pipe and the heat source at the first end of the columnar body 1, so that the arrangement of the external semiconductor waste gas introducing pipe is as compact as possible, and the occupation space of the ventilation structure corresponding to the reaction chamber is reduced; and through arranging a plurality of exhaust gas diversion channels 13 along the circumference of the heat source mounting port 12, and the extending direction of the air outlet end of the exhaust gas diversion channels 13 is inclined relative to the central axis of the heat source mounting port 12, the semiconductor exhaust gas which is introduced from all directions into the reaction chamber can be gathered obliquely towards the propagation direction of the heat source flame, and the products of the semiconductor exhaust gas after combustion can be rapidly distributed along the exhaust channel 14.

In some embodiments, as shown in fig. 1 to 2, the heat source mounting port 12 provided in this embodiment is disposed along the central axis of the columnar body 1, and the plurality of exhaust gas diversion channels 13 are uniformly arranged along the circumferential direction of the heat source mounting port 12.

The extending directions of the air outlet ends of the exhaust gas diversion channels 13 intersect at a first position, the first position is located in the reaction chamber, and the first position is distributed on the central axis of the columnar body 1.

In this embodiment, the heat source mounting ports 12 are arranged on the central axis of the columnar body 1, and the plurality of exhaust gas diversion channels 13 are uniformly arranged along the circumferential direction of the heat source mounting ports 12, and the extending directions of the air outlet ends of the plurality of exhaust gas diversion channels 13 intersect in the reaction chamber 11 and are located on the central axis of the columnar body 1. Not only the propagation direction of the flame of the heat source is extended along the center of the reaction chamber 11, so that the fullness of the flame in the reaction chamber 11 is good.

Meanwhile, the semiconductor waste gas is guided to the concentrated position of the heat source by the waste gas guide channel 13, so that the combustion efficiency of the semiconductor waste gas is high, the flow field of the semiconductor waste gas in the reaction chamber 11 is uniform, the heat load in the reaction chamber 11 is uniformly distributed, the combustion efficiency of the semiconductor waste gas is improved, and the treatment effect of the semiconductor waste gas is good.

In some embodiments, as shown in fig. 1 to 2, the exhaust gas diversion channel 13 provided in the present embodiment is an exhaust gas diversion pipe; and/or the exhaust gas guide passage 13 extends as a circular arc passage along a circular arc trajectory.

It can be understood that, in this embodiment, the exhaust gas guiding channel 13 is set as an exhaust gas guiding pipe, which is more beneficial to designing the radius of the bent pipe of the exhaust gas guiding pipe according to the shape of the reaction chamber 11, so that the internal structural design of the columnar body 1 is more reasonable.

Further, in the present embodiment, by setting the exhaust gas diversion channel 13 as an arc channel, the turning of the flow path of the semiconductor exhaust gas can be made more gentle, the resistance to the flow of the semiconductor exhaust gas is smaller, and the air flow is made smoother.

Meanwhile, when the specific structure of the exhaust gas flow guiding pipe is designed, the air outlet end of the exhaust gas flow guiding pipe can face the most intense part of the combustion reaction, so that the semiconductor exhaust gas can be guided to the high temperature or concentrated position of the heat source in the heat source mounting port 12, and the combustion reaction efficiency of the semiconductor exhaust gas is ensured.

In some embodiments, as shown in fig. 1 and 3, the columnar body 1 provided in this embodiment is further provided with a plurality of catalytic gas inlets 15.

The plurality of catalytic gas inlets 15 are arranged along the circumferential direction of the heat source mounting port 12, and the plurality of catalytic gas inlets 15 and the plurality of exhaust gas diversion passages 13 are arranged in one-to-one opposition.

The air inlet end of the catalytic gas inlet 15 is disposed at the first end of the columnar body 1, and the air outlet end of the catalytic gas inlet 15 is communicated with the air outlet end of the exhaust gas diversion channel 13.

It can be understood that the catalytic gas is introduced into the reaction chamber 11 through the catalytic gas inlet 15 in this embodiment, and the more thorough combustion of the semiconductor waste gas can be ensured under the action of the catalytic gas. The catalytic gas may be compressed air or high-concentration oxygen.

In this embodiment, by providing the gas outlet end of the catalytic gas inlet 15 and the gas outlet end of the exhaust gas diversion channel 13 to be communicated, it is ensured that the catalytic gas introduced from the catalytic gas inlet 15 and the semiconductor exhaust gas introduced from the exhaust gas diversion channel 13 are mixed before being introduced into the reaction chamber 11 for combustion reaction, and the combustion effect of the semiconductor exhaust gas is ensured.

In some embodiments, as shown in fig. 1 and 3, the present embodiment provides an exhaust channel 14 that includes a tapered section 141, a throat section 142, and a diverging section 143.

The gradually-reduced section 141, the throat section 142 and the gradually-expanded section 143 are sequentially connected, one end of the gradually-reduced section 141, which is far away from the throat section 142, is communicated with the reaction chamber 11, and one end of the gradually-expanded section 143, which is far away from the throat section 142, is arranged at the second end of the columnar body 1.

It is understood that the present embodiment may provide the tapered section 141 of the exhaust channel 14 as part of the reaction chamber 11. The tapered section 141 has a gradually smaller cross section, so that the semiconductor waste gas and the heat generated by the combustion reaction can be concentrated at the necking position, and the reaction efficiency is increased.

In this embodiment, when the gas and dust generated by the combustion reaction reach the throat section 142 through the tapered section 141 as the portion of the exhaust passage 14 having the smallest inner diameter, the flow velocity of the gas increases due to the reduced cross-sectional area of the exhaust passage 14, so that a low pressure is generated near the flowing gas, and a pressure difference is generated between the tapered section 141 and the throat section 142, so that the gas and dust generated by the combustion reaction pass through the throat section 142 at a high speed under the action of the pressure difference, and reach the diverging section 143. With the gradual increase of the cross-sectional area of the diverging section 143, the gas and dust after the combustion reaction are gradually diverged during the high-speed discharge to accelerate the outflow of the gas in the reaction chamber 11, thereby ensuring the discharge efficiency of the exhaust passage 14 for the combustion products of the semiconductor exhaust gas.

In some embodiments, as shown in fig. 1 to 3, the exhaust passage 14 provided in the present embodiment extends along the central axis of the columnar body 1, and the exhaust passage 14 is disposed in central symmetry with respect to the central axis of the columnar body 1.

Wherein, the included angle of the side wall of the tapered section 141 is smaller than the included angle of the side wall of the diverging section 143 relative to the central axis of the columnar body 1.

It can be understood that the exhaust channels 14 in this embodiment are symmetrically arranged along the center of the central axis of the columnar body 1, so that the flow field of the exhaust channels 14 is more uniform, and the resistance of exhaust is reduced.

Specifically, as shown in fig. 3, the sidewall of the tapered section 141 has an angle β with respect to the central axis of the columnar body 1, and the sidewall of the diverging section 143 has an angle γ with respect to the central axis of the columnar body 1. In this embodiment, the included angle β is smaller than the included angle γ, so that the flow area of the tail end of the exhaust channel 14 is increased, the gas after the reaction is discharged more smoothly, and the dust generated by the reaction can flow out along with the gas, so that no blockage is formed in the exhaust channel 14.

In some embodiments, as shown in fig. 1 to 3, the columnar body 1 provided by the present embodiment includes a housing assembly 16 and an insulating liner 17.

The shell assembly 16 and the heat insulation lining 17 are coaxially arranged, and the heat insulation lining 17 is detachably arranged in the shell assembly 16; the heat source installation port 12, the exhaust gas diversion passage 13, the reaction chamber 11, and the exhaust passage 14 are provided in the heat insulating bush 17, respectively.

It will be appreciated that this embodiment, by removably attaching the insulating sleeve 17 to the housing assembly 16, facilitates removal of the insulating sleeve 17 from the housing assembly 16 for replacement and repair in the event of damage to the insulating sleeve 17.

Meanwhile, the heat insulating bush 17 of the present embodiment may be provided in a plurality of stages or may be provided in an integrated structure in a direction along the central axis of the columnar body 1.

Under the condition that the heat insulation lining 17 is arranged in a multi-section mode, the heat insulation lining 17 can be mounted and dismounted more flexibly, and when the heat insulation lining 17 is overhauled, only the damaged part of the heat insulation lining 17 needs to be replaced in a targeted mode, so that the maintenance cost of the heat insulation lining 17 is reduced.

The material of the insulating bush 17 may be a refractory castable or an aluminum silicate fiber, and is not particularly limited herein.

In the process of catalytic combustion reaction, a large amount of high-temperature heat is generated in the reaction chamber 11, and the heat insulation lining 17 is arranged between the reaction chamber 11 and the shell assembly 16 in the embodiment, so that the heat radiation of the reaction chamber 11 to the shell assembly 1 can be effectively reduced, the heat loss of the reaction chamber 11 is reduced, the reaction chamber 11 can be maintained at a high temperature all the time in the reaction process, and the catalytic combustion reaction is facilitated.

At the same time, the insulating lining 17 prevents the heat transfer of the reaction chamber 11 to the housing assembly 1, thereby protecting the housing assembly 1 from high temperature corrosion of the housing assembly 1.

In some embodiments, as shown in fig. 1-3, the present embodiment provides a housing assembly 16 that includes an inner housing 161 and an outer housing 162.

The inner case 161 is provided inside the outer case 162 to form a sandwich space between the inner case 161 and the outer case 162; an insulating bushing 17 is provided in the inner housing.

The bottom of the housing assembly 16 is provided with a fluid inlet and the top of the housing assembly 16 is provided with a fluid outlet, which are in communication with the sandwich space, respectively.

It is understood that, in order to secure the connection of the inner case 161 and the outer case 162, the inner case 161 and the outer case 162 may be directly welded, or a flange connection may be provided between the inner case 161 and the outer case 162.

In this embodiment, a sandwich space is provided between the inner shell 161 and the outer shell 162, and fluid is introduced from the bottom of the sandwich space, so that the fluid flows out from the top of the sandwich space, and the convective heat exchange between the fluid and the shell assembly 1 can be realized, so that the heat of the shell assembly 1 is taken away by the fluid, the temperature of the outer wall of the shell assembly 1 is further reduced, and the safety of the shell assembly 1 to the surrounding environment is ensured.

Meanwhile, in this embodiment, the fluid inlet is disposed at the bottom of the housing assembly 16, and the fluid outlet is disposed at the top of the housing assembly 16, so that the flow direction of the fluid is opposite to the flame propagation speed in the reaction chamber 11, so that the fluid is in reverse convection heat exchange, the heat exchange efficiency is improved, and the heat exchange amount is increased. The arrangement of the interlayer space reduces the high temperature corrosion and chemical corrosion of the outer wall of the housing assembly 1 and ensures the durability of the housing assembly 1, since the high temperature also strengthens the chemical corrosion of the outer wall of the housing assembly 1.

The fluid in this embodiment may be cooling water or ice brine, and is not particularly limited.

In some embodiments, as shown in fig. 1-3, the housing assembly 16 provided by the present embodiment further includes a first flange 163 and a second flange 164.

The first flange 163 is provided between the first end of the inner housing 161 and the first end of the outer housing 162; a second flange 164 is provided between the second end of the inner housing 161 and the second end of the outer housing 162.

Specifically, the present embodiment can ensure the mechanical strength of the housing assembly 16 as a whole by disposing the first flange 163 and the second flange 164 separately on the upper and lower sides of the inner housing 161 and the outer housing 162, and is advantageous in forming a sandwich space between the inner housing 161 and the outer housing 162 by disposing the first flange 163 and the second flange 164.

The radial width of the first flange 163 and the second flange 164 determines the interlayer thickness corresponding to the interlayer space.

In some embodiments, as shown in fig. 1-3, the housing assembly 16 provided by the present embodiment further includes a baffle 165 and a blade 166.

The deflector 165 is provided with a plurality of deflector openings 1651, and the plurality of deflector openings 1651 and the air inlet ends of the plurality of waste gas deflector channels 13 are arranged in a one-to-one opposite manner; the baffle 165 abuts against a first end of the insulating bush 17, and the pallet 166 abuts against a second end of the insulating bush 17.

Specifically, the baffle 165 of the present embodiment is connected to the first flange 163, the baffle 165 abuts against the first end of the insulating bush 17, and the pallet 166 is connected to the second flange 164, and the pallet 166 abuts against the second end of the insulating bush 17, so that the baffle 165 and the pallet 166 are clamped on opposite sides of the insulating bush 17, which is advantageous in preventing the insulating bush 17 from being detached from the housing assembly 16.

Further, the baffle 165 of the present embodiment is disposed on the upper side of the first flange 163, a plurality of baffle ports 1651 are disposed on the baffle 165, and one end of the exhaust gas guiding pipe is communicated with the baffle ports 1651. In this embodiment, the baffle 165 is provided, so that the external semiconductor waste gas introducing pipe is connected with the diversion port 1651, and the operation is simple and convenient.

Since the baffle 165 is provided with the plurality of baffle openings 1651, in order to ensure the installation posture of the baffle 165 and prevent the baffle 165 from rotating during use, the embodiment may provide a plurality of positioning holes on the baffle 165 and a plurality of protrusions on the first flange 163, where the plurality of protrusions penetrate the plurality of positioning holes in a one-to-one correspondence. Wherein the height of the protrusions is greater than the thickness of the baffle 165.

In one example, two positioning holes may be disposed on the baffle 165, and two protrusions may be disposed on the first flange 163, where the protrusions may be cylindrical or cubic, and the shape of the positioning holes and the protrusions may be adapted without being limited thereto.

Meanwhile, the pallet 166 of the present embodiment is disposed below the second flange 164 and abuts against the second end of the insulating bush 17. In this embodiment, the supporting plate 166 and the second flange 164 may be fixed by screws, so that the supporting plate 166 may be mounted and dismounted.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.

Claims (10)

1. The reaction cavity is characterized by comprising a columnar body, wherein the columnar body is provided with a reaction cavity, a heat source mounting port communicated with the reaction cavity, an exhaust gas diversion channel and an exhaust channel;

the heat source installation opening is arranged at the first end of the columnar body, a plurality of exhaust gas diversion channels are arranged, and the exhaust gas diversion channels are arranged along the circumferential direction of the heat source installation opening;

the air inlet end of the exhaust gas diversion channel is arranged at the first end of the columnar body, and the extending direction of the air outlet end of the exhaust gas diversion channel is obliquely arranged relative to the central axis of the heat source mounting port;

the air inlet end of the exhaust channel and the air outlet end of the exhaust diversion channel are respectively arranged on opposite sides of the reaction chamber, and the air outlet end of the exhaust channel is arranged at the second end of the columnar body.

2. The reaction chamber for semiconductor exhaust gas treatment according to claim 1, wherein the heat source mounting port is provided along a central axis of the columnar body, and a plurality of the exhaust gas flow guiding passages are uniformly arranged along a circumferential direction of the heat source mounting port;

the extending directions of the air outlet ends of the exhaust gas diversion channels are intersected at a first position, the first position is located in the reaction chamber, and the first position is distributed on the central axis of the columnar body.

3. The reaction chamber for semiconductor exhaust treatment of claim 1, wherein the exhaust gas diversion channel is an exhaust gas diversion pipe; and/or the exhaust gas diversion channel extends into an arc channel along the arc track.

4. The reaction chamber for semiconductor exhaust gas treatment according to claim 1, wherein the columnar body is further provided with a plurality of catalytic gas inlets;

the catalytic gas inlets are arranged along the circumferential direction of the heat source mounting opening, and the catalytic gas inlets and the exhaust gas diversion channels are arranged in a one-to-one opposite manner;

the gas inlet end of the catalytic gas inlet is arranged at the first end of the columnar body, and the gas outlet end of the catalytic gas inlet is communicated with the gas outlet end of the waste gas diversion channel.

5. The reaction chamber for semiconductor exhaust gas treatment according to claim 1, wherein the exhaust passage comprises a tapered section, a throat section and a diverging section;

the convergent section the throat section with the divergent section connects gradually, the convergent section keep away from the one end of throat section with the reaction chamber intercommunication, the divergent section is kept away from the one end of throat section is located the second end of column body.

6. The reaction chamber for semiconductor exhaust gas treatment according to claim 5, wherein the exhaust passage extends along the central axis of the columnar body, and the exhaust passage is disposed in central symmetry with respect to the central axis of the columnar body;

the included angle of the side wall of the gradually-reduced section relative to the central axis of the columnar body is smaller than the included angle of the side wall of the gradually-expanded section relative to the central axis of the columnar body.

7. The reaction chamber for use in semiconductor exhaust gas treatment according to any one of claims 1 to 6, wherein the columnar body comprises a housing assembly and a thermally insulating liner;

the shell assembly and the heat insulation bushing are coaxially arranged, and the heat insulation bushing is detachably arranged in the shell assembly; the heat source mounting port, the waste gas diversion channel, the reaction chamber and the exhaust channel are respectively arranged on the heat insulation lining.

8. The reaction chamber for use in semiconductor exhaust gas treatment of claim 7, wherein the housing assembly comprises an inner housing and an outer housing;

the inner shell is arranged on the inner side of the outer shell so as to form an interlayer space between the inner shell and the outer shell; the heat insulation lining is arranged in the inner shell;

the bottom of the shell assembly is provided with a fluid inlet, the top of the shell assembly is provided with a fluid outlet, and the fluid inlet and the fluid outlet are respectively communicated with the interlayer space.

9. The reaction chamber for use in semiconductor exhaust gas treatment of claim 8, wherein the housing assembly further comprises a first flange and a second flange;

the first flange is arranged between the first end of the inner shell and the first end of the outer shell; the second flange is disposed between the second end of the inner housing and the second end of the outer housing.

10. The reaction chamber for use in semiconductor exhaust treatment of claim 8, wherein the housing assembly further comprises a baffle plate and a pallet;

the guide plate is provided with a plurality of guide openings, and the guide openings and the air inlet ends of the waste gas guide channels are arranged in a one-to-one opposite mode; the guide plate is abutted to the first end of the heat insulation lining, and the supporting plate is abutted to the second end of the heat insulation lining.

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