CN218772029U - Crystal oscillator assembly body - Google Patents
Crystal oscillator assembly body Download PDFInfo
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- CN218772029U CN218772029U CN202223220272.1U CN202223220272U CN218772029U CN 218772029 U CN218772029 U CN 218772029U CN 202223220272 U CN202223220272 U CN 202223220272U CN 218772029 U CN218772029 U CN 218772029U
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- guide sheet
- metal guide
- conductive
- positive
- wafer
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Abstract
A crystal oscillator assembly comprises an assembly base and an encapsulation cover, wherein a positive metal conducting strip and a negative metal conducting strip are arranged on the upper surface of the assembly base and are respectively in contact connection with a conducting electrode of a wafer; the lower surface of the assembly base is provided with at least two metal pins; and the positions of the positive metal guide sheet and the negative metal guide sheet on the assembly base are respectively provided with a through conductive through hole, one end of each conductive through hole is contacted with the positive metal guide sheet or the negative metal guide sheet, and the other end of each conductive through hole is contacted with one metal pin. Compared with the prior art, come direct and the conductive electrode contact of wafer through setting up positive metal guide piece and negative metal guide piece to through electrically conductive through-hole switch-on metal pin, need not set up extra conductive path, manufacturing process is simpler, and the circuit is simple simultaneously, and the convenience is to the maintenance of problem point.
Description
Technical Field
The utility model relates to a quartz crystal syntonizer field, it is specific, relate to a crystal oscillator assembly body.
Background
A quartz crystal oscillator, referred to as a crystal oscillator for short, is manufactured by the principle that when the frequency of an electrical signal is equal to the natural frequency of a quartz crystal plate, the quartz crystal plate generates a resonance phenomenon, and is often used in an LC oscillation circuit or a filter according to this characteristic. Meanwhile, the crystal oscillator has the characteristics of small volume and high stability, and the requirement on the manufacturing process of the crystal oscillator is very high due to the characteristics.
Patent application publication No. CN107769750A discloses an all-quartz-crystal resonator with an improved electrode connection structure and a method for manufacturing the same, which discloses that the resonator is provided with a central area of a quartz wafer, the surface of the central area of the quartz wafer is covered with a central double-sided plated electrode, and the central double-sided plated electrode comprises an upper surface plated electrode and a lower surface plated electrode, so that a conductive loop is formed. The general crystal oscillator adopts a similar mode to form a conductive loop in an internal mode, and because the volume of a crystal oscillator chip is small, high process requirements are required when the conductive loop is arranged, the situation of short circuit or open circuit of a circuit is ensured not to occur, and in addition, the detection of the circuit is difficult when the short circuit or the open circuit occurs.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at overcoming above-mentioned prior art's at least defect, provide a crystal oscillator assembly body, it is high to solve crystal oscillator production technology requirement, examines the problem of difficulty.
The utility model discloses a scheme do:
the crystal resonator comprises an assembly base and a packaging cover, wherein a positive metal conducting strip and a negative metal conducting strip are arranged on the upper surface of the assembly base and are respectively in contact connection with a conducting electrode of a wafer;
the lower surface of the assembly base is provided with at least two metal pins;
and the positions of the positive metal guide sheet and the negative metal guide sheet on the assembly base are respectively provided with a through conductive through hole, one end of each conductive through hole is in contact with the positive metal guide sheet or the negative metal guide sheet, and the other end of each conductive through hole is in contact with one metal pin.
The assembling base is provided with a positive metal guide sheet and a negative metal guide sheet which are used for being in contact connection with conductive electrodes on a wafer and can be arranged according to the model of the wafer, the assembling base is provided with conductive through holes penetrating through the assembling base, the positions of the conductive through holes respectively correspond to the positions of the positive metal guide sheet and the negative metal guide sheet, the number of the conductive through holes corresponds to the number of the positive metal guide sheet and the negative metal guide sheet, namely, the positive metal guide sheet and the negative metal guide sheet are respectively provided with a conductive through hole, one end of each conductive through hole is connected with the positive metal guide sheet or the negative metal guide sheet, the other end of each conductive through hole is connected with a metal pin, so that conductive paths of the positive metal guide sheet/the negative metal guide sheet, the conductive through holes and the metal pins are formed, only the conductive electrodes on the wafer are respectively in contact with the positive metal guide sheet and the negative metal guide sheet, the wafer is packaged and fixed on the assembling base by using a packaging cover, the assembling and the wafer can be assembled and conducted without arranging conductive channels or conductive material covering the paths on the corresponding structures, so that the difficulty of the manufacturing process is reduced, the path structure is simple, the wafer is convenient to install and debug, and the problem that the problem of the wafer can be easily positioned and the problem of the type can be solved.
Further, the positive metal guide sheet and the negative metal guide sheet are of strip structures.
Further, the positive metal guide sheet and the negative metal guide sheet are arranged on the assembly base in parallel.
Further, the distance between the positive metal guide sheet and the negative metal guide sheet is matched with the length or width of the assembled wafer;
the positive metal guide sheet and the negative metal guide sheet have the same length and correspond to the long edge or the wide edge of the wafer;
when the distance between the positive metal guide sheet and the negative metal guide sheet corresponds to the long edge of the wafer, the lengths of the positive metal guide sheet and the negative metal guide sheet correspond to the width of the wafer;
when the distance between the positive metal guide sheet and the negative metal guide sheet corresponds to the wide side of the wafer, the lengths of the positive metal guide sheet and the negative metal guide sheet correspond to the length of the wafer.
The shape of the wafer is generally rectangular, the conductive poles of the wafer are generally arranged on or near any two corners of four corners of the wafer, and are specifically arranged according to the model of the wafer, the positive metal guide sheet and the negative metal guide sheet are in strip structures and are arranged on the assembly base in parallel, the distance between the positive metal guide sheet and the negative metal guide sheet is matched with the length or width of the assembled wafer, so as to correspond to various models and types of conductive pole position wafers, the strip structures can enable the positive metal guide sheet and the negative metal guide sheet to be attached to the long side or the wide side of the rectangular wafer, the lengths of the positive metal guide sheet and the negative metal guide sheet correspond to the lengths of the long side or the wide side of the attached wafer, the positive metal guide sheet/the negative metal guide sheet can be contacted with one of the two poles of the wafer, and the positions of the positive metal guide sheet and the negative metal guide sheet arranged on the long side or the wide side of the wafer are specifically determined according to the positions of the conductive poles of the wafer: when the conductive electrode of the wafer is arranged at the diagonal position, the positive metal guide sheet and the negative metal guide sheet can be arranged at any position of the long side or the wide side; when the conductive electrodes of the wafer are arranged on two corners of the same long edge, the positive metal guide sheet and the negative metal guide sheet are respectively arranged on two wide edges; when the conductive electrodes of the wafer are arranged on two corners of the same wide edge, the positive metal guide sheet and the negative metal guide sheet are respectively arranged on two long edges. In actual production, the wafers of the corresponding models are matched with the correspondingly arranged crystal oscillator assembly, and compared with the situation that a metal guide sheet is arranged for each conductive electrode, the arrangement can match the wafers of various models with the minimum arrangement situation, so that the production procedures are reduced, and the production efficiency is improved.
Furthermore, the number of the conductive through holes is two, and the two conductive through holes are respectively arranged at any end of the strip-shaped positive metal guide sheet and one end of the strip-shaped negative metal guide sheet.
Furthermore, the inner walls of the conductive through holes are plated with conductive metal materials. Preferably, silver or chromium conductive materials.
Furthermore, the conductive through hole is filled with a sealing medium.
Further, the sealing medium is a non-conductive insulating material. Preferably, the insulating material is low-temperature glass.
The number of the conductive through holes corresponds to the number of the positive metal conducting pieces and the negative metal conducting pieces, namely, the positive metal conducting pieces and the negative metal conducting pieces are respectively provided with one conductive through hole, the conductive metal material at one end of each conductive through hole is contacted with the positive metal conducting pieces/the negative metal conducting pieces, the conductive metal material at the other end of each conductive through hole is contacted with one metal pin, and the positive metal conducting pieces and the negative metal conducting pieces are respectively contacted and connected with two conductive electrodes of the wafer to form a conductive loop of the metal pins, the conductive loop is simple and clear, and when a problem occurs, the problem can be well positioned to a problem point.
Furthermore, the packaging cover is of a concave cover plate structure, and the shape and the size of the concave part are matched with those of the loading matching chip.
Further, the metal pins are rectangular or square in shape. The arrangement positions of the metal pins correspond to the positions of the conductive through holes, and one corner of the rectangle or the square of one of the metal pins is removed to form a pentagon which is used for distinguishing the positive electrode and the negative electrode connected with the wafer loading body.
Compared with the prior art, the beneficial effects of the utility model are that: through set up bar positive metal guide piece/negative metal guide piece on the assembly base to make it correspond with the long limit or the minor face of wafer, the wafer of the various models of matching that can be fine, and the setting of metal guide piece is compared in seting up the conducting channel or plating metal tectorial membrane forms the conducting wire, and manufacturing process is simpler, and the conducting wire is simpler, when the circuit goes wrong, fixes a position the problem point more easily and restores.
Drawings
FIG. 1 is a block diagram of the present invention including a package cover;
FIG. 2 is a block diagram of the present invention without a packaging cover;
FIG. 3 is a perspective top view of the assembly base of the present invention;
fig. 4 is a perspective side view of the assembly base of the present invention;
the attached drawings are marked as follows: the assembly base 1, the wafer 2, the package cover 3, the positive metal lead 11, the negative metal lead 12, the conductive through hole 13 and the metal pin 14.
Detailed Description
The drawings of the present invention are for illustration purposes only and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example 1
The present embodiment provides a crystal oscillator assembly, as shown in fig. 1, including an assembly base 1 and a package cover 3, wherein a positive metal conducting strip 11 and a negative metal conducting strip 12 are disposed on an upper surface of the assembly base 1, and the positive metal conducting strip 11 and the negative metal conducting strip 12 are respectively in contact connection with a conducting electrode of a wafer 2; as shown in fig. 2 and 3, the positive metal conducting strip 11 and the negative metal conducting strip 12 are strip-shaped structures, and the positive metal conducting strip 11 and the negative metal conducting strip 12 are arranged in parallel, in this embodiment, the positive metal conducting strip 11 and the negative metal conducting strip 12 are arranged at positions corresponding to two wide sides of the wafer 2, as shown in fig. 2, at this time, the distance between the positive metal conducting strip 11 and the negative metal conducting strip 12 corresponds to the length of the long side of the wafer 2, so that two conductive electrodes of the wafer 2 can be respectively contacted with the positive metal conducting strip 11 and the negative metal conducting strip 12; in another embodiment, the positive metal guide plate 11 and the negative metal guide plate 12 may also be disposed at positions corresponding to two broadsides of the wafer 2, where a distance between the positive metal guide plate 11 and the negative metal guide plate 12 corresponds to a length of the broadsides of the wafer 2, and types of the corresponding wafers 2 are different, specifically:
when the two conductive electrode positions of the wafer 2 are both disposed at the corners of the two ends of the long side of the wafer 2 as shown in fig. 2, the positive metal guide plate 11 and the negative metal guide plate 12 can be disposed only at the positions corresponding to the two wide sides of the wafer 2, respectively; when the two conductive electrode positions of the wafer 2 are both arranged at the corners of the two ends of the wide side of the wafer 2, the positive metal guide sheet 11 and the negative metal guide sheet 12 can only be respectively arranged at the positions corresponding to the two long sides of the wafer 2; when the two conductive electrode positions of the wafer 2 are disposed at diagonal positions of the wafer 2, the positive metal lead 11 and the negative metal lead 12 may be disposed at positions corresponding to two long sides or wide sides, respectively. Therefore, the arrangement only needs the arrangement conditions of the two metal guide sheets to correspond to the wafers 2 of all models, the number of types of produced assembler is reduced, and the production efficiency is improved.
The lower surface of the mounting base 1 is provided with metal pins 14, and as shown in fig. 3, in the present embodiment, four metal pins 14 are provided, respectively at four corners of the mounting base 1.
As shown in fig. 3 and 4, the positions of the positive metal conducting strip 11 and the negative metal conducting strip 12 on the assembly base 1 are respectively provided with a through conductive through hole 13, one end of the conductive through hole 13 is in contact with the positive metal conducting strip 11 or the negative metal conducting strip 12, and the other end is in contact with one metal pin 14. The number of the conductive through holes 13 corresponds to the number of the positive metal conducting strip 11 and the negative metal conducting strip 12, in this embodiment, one positive metal conducting strip 11 and one negative metal conducting strip 12 are provided, so two conductive through holes 13 are provided, one is provided at a position corresponding to the positive metal conducting strip 11, the other is provided at a position corresponding to the negative metal conducting strip 12, the inner walls of the conductive through holes 13 are plated with a conductive metal material, preferably a conductive metal material such as silver or chromium, the conductive through holes 13 are filled with an insulating medium, preferably an insulating medium such as low temperature glass, the insulating metal material of the inner walls contacts with the positive metal conducting strip 11/the negative metal conducting strip 12 at one end of the conductive through holes 13 and contacts with a metal lead at the other end, one conductive through hole 13 contacts with one metal pin 14, the conductive through hole 13 can contact with any one metal lead, and it is only required to ensure that the corresponding position is connected with only one of the positive metal conducting strip 11 or the negative metal conducting strip 12. The flexibility of the arrangement and assembly is further improved. The conductive path of the metal pins 14, the metal guide sheet, the wafer 2, the metal guide sheet and the metal pins 14 is formed, the structure is simple and clear, a conductive channel does not need to be formed, the process manufacturing difficulty is reduced, and meanwhile, the simple structure can be used for more simply positioning a problem occurrence point when a problem is sent, so that the maintenance is convenient.
As shown in fig. 3, one of the metal pins 14 contacting the conductive through hole 13 is pentagonal, and the other metal pins 14 are rectangular or square, and the regular pentagonal shape is mainly used for conveniently distinguishing the positive electrode from the negative electrode, and the positive electrode and the negative electrode are not hard to be specified, because the positive electrode and the negative electrode do not influence the performance of the wafer 2 due to the influence of the properties of the wafer itself, so the arrangement is convenient to distinguish.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not limitations to the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (10)
1. A crystal oscillator assembly comprises an assembly base and an encapsulation cover, and is characterized in that,
the upper surface of the assembly base is provided with a positive metal guide sheet and a negative metal guide sheet which are respectively in contact connection with a conductive electrode of a wafer loaded on the assembly body;
the lower surface of the assembly base is provided with at least two metal pins;
and the positions of the positive metal guide sheet and the negative metal guide sheet on the assembly base are respectively provided with a through conductive through hole, one end of each conductive through hole is in contact with the positive metal guide sheet or the negative metal guide sheet, and the other end of each conductive through hole is in contact with one metal pin.
2. A crystal oscillator assembly as set forth in claim 1 wherein said positive and negative metal leads are of strip configuration.
3. A crystal oscillator assembly as set forth in claim 2 wherein said positive and negative metal leads are disposed in parallel on said mounting base.
4. A crystal oscillator assembly as claimed in claim 3, wherein the distance between the positive and negative metal leads matches the length or width of the wafer being assembled;
the positive metal guide sheet and the negative metal guide sheet have the same length and correspond to the long edge or the wide edge of the wafer;
when the distance between the positive metal guide sheet and the negative metal guide sheet corresponds to the long edge of the wafer, the lengths of the positive metal guide sheet and the negative metal guide sheet correspond to the width of the wafer;
when the distance between the positive metal guide sheet and the negative metal guide sheet corresponds to the wide side of the wafer, the lengths of the positive metal guide sheet and the negative metal guide sheet correspond to the length of the wafer.
5. A crystal oscillator assembly as claimed in claim 4, wherein there are two of said conductive vias provided, one at either end of said positive metal lead and one at either end of said negative metal lead.
6. A crystal oscillator assembly as set forth in claim 5 wherein said conductive vias are plated on their inner walls with a conductive metal material.
7. A crystal oscillator assembly as claimed in claim 6, wherein the conductive via is filled with a sealing medium.
8. A crystal oscillator assembly as claimed in claim 7, in which the sealing medium is a non-conductive dielectric material.
9. A crystal oscillator assembly as claimed in any one of claims 1 to 8, wherein the package cover is of a concave lid configuration, the concave portion being shaped and sized to fit the chip.
10. A crystal oscillator assembly as claimed in any one of claims 1 to 8, wherein said metal pins are rectangular or square in shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223220272.1U CN218772029U (en) | 2022-11-30 | 2022-11-30 | Crystal oscillator assembly body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223220272.1U CN218772029U (en) | 2022-11-30 | 2022-11-30 | Crystal oscillator assembly body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218772029U true CN218772029U (en) | 2023-03-28 |
Family
ID=85677943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223220272.1U Active CN218772029U (en) | 2022-11-30 | 2022-11-30 | Crystal oscillator assembly body |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218772029U (en) |
-
2022
- 2022-11-30 CN CN202223220272.1U patent/CN218772029U/en active Active
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