CN218755990U - Surface activation process chamber - Google Patents

Abstract

The embodiment of the utility model discloses a surface activation process chamber, the upper left side and the lower right side of which are respectively provided with a heater, wherein, the upper left heater is used for carrying out secondary baking on the front side of a flexible PI substrate, and the lower right heater is used for carrying out secondary baking on the back side of the flexible PI substrate; the ion source of the surface activation process chamber is positioned between the upper left heater and the lower right heater and comprises a first ion source and a second ion source, wherein the first ion source is close to the upper left heater and used for carrying out material surface activation treatment on the back surface of the flexible PI base material, and the second ion source is close to the lower right heater and used for carrying out material surface activation treatment on the front surface of the flexible PI base material. The embodiment of the utility model provides a, process chamber overall structure is simple, can further get rid of the remaining hydrone in PI substrate surface to improve the surface activation degree of flexible PI substrate, provide good earlier stage for the follow-up vacuum coating equipment that can prepare out surface adhesion meet the requirements.

Description

Surface activation process chamber

The technical field is as follows:

the utility model relates to a surface activation process chamber, in particular to a surface activation process chamber applied to winding type copper film vacuum coating equipment.

Background art:

with the development of science and technology, especially the development of flexible circuit board technology and lithium battery technology, the demand for light, thin and flexible battery electrodes and circuit boards is higher and higher. The PI material has good chemical stability of temperature resistance and corrosion resistance and excellent mechanical stability, and is the best choice as a copper film base material.

In a vacuum coating apparatus for realizing a winding copper film coating by using a PI material, a surface activation process chamber is usually required to be equipped, but the existing surface activation process chamber has the defects of complex structure and poor surface activation effect.

The invention content is as follows:

in order to overcome the problem that the existing surface activation process chamber has a complex structure, the embodiment of the utility model provides a surface activation process chamber.

A surface activation process chamber, which is applied to winding type copper film vacuum coating equipment,

heaters are respectively arranged at the upper left side and the lower right side of the surface activation process chamber, wherein the upper left heater is used for carrying out secondary baking on the front surface of the flexible PI base material, and the lower right heater is used for carrying out secondary baking on the back surface of the flexible PI base material;

the ion source of the surface activation process chamber is positioned between the upper left heater and the lower right heater and comprises a first ion source and a second ion source, wherein the first ion source is close to the upper left heater and used for carrying out material surface activation treatment on the back surface of the flexible PI base material, and the second ion source is close to the lower right heater and used for carrying out material surface activation treatment on the front surface of the flexible PI base material.

The embodiment of the utility model provides a, the overall structure of process chamber is simple, through set up the heater in the surface activation process chamber, can carry out the secondary to the positive and negative two sides of flexible PI substrate respectively and toast to further get rid of the remaining hydrone on PI substrate surface; and the double-ion source is used for carrying out material surface activation treatment on the front surface and the back surface of the flexible PI base material, so that the surface activation degree of the flexible PI base material is improved, and good early-stage preparation is provided for preparing vacuum coating equipment with the surface adhesive force meeting the requirement in the follow-up process.

Description of the drawings:

in order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic diagram of an exemplary layout of a winding type copper film vacuum coating apparatus for a circuit board or a battery electrode according to an embodiment of the present invention;

fig. 2 is a schematic structural view of an unwinding chamber according to an embodiment of the present invention;

FIG. 3 is a schematic view of a surface activation process chamber according to an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of a modification process chamber according to an embodiment of the present invention;

FIG. 5 is a schematic structural view of an arc target ion plating process chamber according to an embodiment of the present invention;

FIG. 6 is a schematic structural view of a magnetron sputtering coating process chamber according to an embodiment of the present invention;

fig. 7 is a schematic structural view of a rolling chamber in an embodiment of the present invention;

fig. 8 is a front view of a heater according to an embodiment of the present invention;

fig. 9 is a top view of a heater according to an embodiment of the present invention;

fig. 10 is a schematic structural view of a chill roll according to an embodiment of the present invention;

fig. 11 is a sectional view of a chill roll according to an embodiment of the present invention;

fig. 12 is a schematic structural view of the oscillating roller according to the embodiment of the present invention;

fig. 13 is a schematic plan view showing a first copper film product prepared by the vacuum deposition apparatus according to the embodiment of the present invention;

fig. 14 is a schematic plan view showing a second copper film product sample prepared by the vacuum deposition apparatus according to the embodiment of the present invention.

The specific implementation mode is as follows:

in order to make the technical problem, technical solution and advantageous effects solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to further explain the present invention in detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

When embodiments of the present invention refer to the ordinal numbers "first", "second", etc., it should be understood that the terms are used for distinguishing only when they do express the ordinal order in context.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.

The embodiment of the utility model provides a coiling type copper film vacuum coating equipment for a circuit board or a battery electrode, which at least comprises an unreeling chamber 1, a process chamber and a reeling chamber 6 which are arranged in sequence as shown in figure 1; the unwinding chamber 1 is used for baking the flexible PI base material 01 once through a heater 11 to remove water molecules attached to the surface of the PI base material 01, unwinding the flexible PI base material 01 through an unwinding roller 12 and conveying the flexible PI base material forward, and the winding chamber 6 is used for winding a copper film for generating a Cu functional layer through a winding roller 61; the process chamber at least comprises:

the surface activation process chamber 2 is used for carrying out secondary baking on the conveyed flexible PI base material through the heater 11 and carrying out material surface activation treatment on the flexible PI base material through an ion source;

the modification process chamber 3 is used for injecting Cu ions through a metal source to enable the surface of the flexible PI base material subjected to surface activation treatment to form a modified embedded layer combined by the Cu ions and PI material surface atoms or molecules;

the arc target ion coating process chamber 4 is used for injecting Cu ions through an arc source ion source to form a Cu transition layer on the modified embedding layer; and

and the magnetron sputtering coating process chamber 5 is used for forming a Cu functional layer on the Cu transition layer by a magnetron sputtering source in a direct current sputtering mode.

The embodiment of the utility model provides a, the process chamber comprises surface activation process chamber, modification process chamber, arc target ion coating process chamber, magnetron sputtering coating process chamber, can realize process treatments such as surface activation treatment, modification treatment, ion plating and magnetron sputtering to the PI substrate respectively, and the copper film of making through process chamber vacuum coating, its surface adhesion satisfies the requirement that is greater than 0.7N/mm.

In the embodiment of the present invention, the thickness of the flexible PI substrate is 4.5-75 μm, preferably 4.5 μm, and the width thereof is 260mm. The copper film is generated by the surface activation process chamber, the modification process chamber, the arc target ion coating process chamber and the magnetron sputtering coating process chamber, the whole thickness is 100nm, the resistivity is 5-6E-6 omega cm, and the square resistance nonuniformity is less than 5%.

Further, as a preferred embodiment of the present invention but not limited thereto, as shown in fig. 5, the arc source ion source of the arc target ion plating process chamber 4 comprises a first arc source ion source 41 and a second arc source ion source 42, wherein the first arc source ion source 41 is located at the upper left side of the arc target ion plating process chamber 4 and is used for forming a Cu transition layer on the modified embedded layer on the front side of the flexible PI substrate; and a second arc source ion source 42 is located on the lower right side of the arc target ion plating process chamber 4 and is used for forming a Cu transition layer on the modified embedded layer on the back side of the flexible PI substrate. Arc source ion sources are respectively arranged on the front side and the back side of the flexible PI substrate, an arc source ion plating technology is adopted, a magnetic deflection structure is installed, and by the aid of the magnetic deflection arc source technology, pollution of large liquid drops to materials and a film layer can be reduced, film coating quality is guaranteed, and priming of a CU film layer is well carried out; meanwhile, cu transition layers are formed on the front surface and the back surface of the flexible PI substrate at the same time, so that the film coating efficiency is improved, the film coating is finished on the two surfaces at one time, and the yield and the efficiency loss caused by reciprocating winding are reduced. In this embodiment, the working pressure of the arc target ion plating process chamber is 0.05-0.1Pa.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 5, a first cooling roller 411 and a second cooling roller 412 are disposed up and down near the first arc source ion source 41 in the arc target ion plating process chamber 4, a first longitudinal cooling plate 401 is disposed between the first cooling roller 411 and the second cooling roller 412, and the first longitudinal cooling plate 401 is opposite to the first arc source ion source 41 and is used for cooling the back surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled.

Further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 5, a third cooling roller 423 and a fourth cooling roller 424 are disposed in the arc target ion plating process chamber 4 near the second arc source ion source 42, and a second longitudinal cooling plate 402 is disposed between the third cooling roller 423 and the fourth cooling roller 424, the second longitudinal cooling plate 402 is opposite to the second arc source ion source 42 and is used for cooling the front surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled.

Further, as a preferred embodiment of the present invention without limitation, as shown in fig. 6, the magnetron sputtering source of the magnetron sputtering coating process chamber 5 includes a first magnetron sputtering source 51, a second magnetron sputtering source 52, a third magnetron sputtering source 53 and a fourth magnetron sputtering source 54, wherein the first magnetron sputtering source 51 and the second magnetron sputtering source 52 are located at the left side of the magnetron sputtering coating process chamber 5 for forming a Cu functional layer on the Cu transition layer at the back of the flexible PI substrate; the third magnetron sputtering source 53 and the fourth magnetron sputtering source 54 are positioned on the right side of the magnetron sputtering coating process chamber 5 and are used for forming a Cu functional layer on the Cu transition layer on the front surface of the flexible PI substrate. Two magnetron sputtering sources, specifically cylindrical magnetron sputtering cathodes, are respectively arranged on the front side and the back side of the flexible PI substrate, and a scheme of low-power mode direct current sputtering is adopted, so that coating can be simultaneously completed on the two sides at one time, and the yield and the efficiency loss caused by reciprocating winding are reduced. In the embodiment, the working pressure of the magnetron sputtering coating process chamber is 0.2-0.5Pa.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 6, a fifth cooling roll 55 and a sixth cooling roll 56 are provided in the magnetron sputtering coating process chamber 5 on the upper and lower sides near the right side of the first magnetron sputtering source 51 and the second magnetron sputtering source 52, and a third vertical cooling plate 503 is provided between the fifth cooling roll 55 and the sixth cooling roll 56, and the third vertical cooling plate 503 is opposed to the first magnetron sputtering source 51 and the second magnetron sputtering source 52 and is used for cooling the front surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled. In addition, the magnetron sputtering source adopts a suspension coating film to match with the longitudinal cooling plate, and can perform sputtering coating in a low-power mode, thereby ensuring the requirements of coating thickness and resistivity.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 6, a seventh cooling roller 57 and an eighth cooling roller 58 are vertically disposed on the left side of the magnetron sputtering process chamber 5 near the third magnetron sputtering source 53 and the fourth magnetron sputtering source 54, a fourth vertical cooling plate 504 is disposed between the seventh cooling roller 57 and the eighth cooling roller 58, and the fourth vertical cooling plate 504 is opposed to the third magnetron sputtering source 53 and the fourth magnetron sputtering source 54 and is used for cooling the back surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled. In addition, the magnetron sputtering source adopts a suspension coating film to match with the longitudinal cooling plate, and can perform sputtering coating in a low-power mode, thereby ensuring the requirements of coating thickness and resistivity.

Still further, as a preferred embodiment of the present invention but not limited thereto, as shown in fig. 4, the metal source of the modification process chamber 3 includes a first metal source 31 and a second metal source 32, wherein the first metal source 31 is located at a position above the left side of the modification process chamber 3 and is used for forming a modified embedded layer combined by Cu ions and surface atoms or molecules of the PI material on the front surface of the flexible PI substrate; and the second metal source 32 is located at the lower right side of the modification process chamber 3 and is used for forming a modified embedded layer formed by combining Cu ions and surface atoms or molecules of the PI material on the back surface of the flexible PI substrate. The two sides can be coated at the same time, so that the yield and the efficiency loss caused by the reciprocating winding are reduced. In this embodiment, the working pressure of the modification process chamber is 0.002-0.004Pa.

In the embodiment, an ion beam with the energy of 100keV is incident into the material, the ion beam and atoms or molecules in the material generate a series of physical and chemical interactions, the incident ions gradually lose energy and finally stay in the material, and the surface composition, structure and performance of the material are changed, so that the surface performance of the material is optimized, or certain new excellent performance is obtained. The injected ions are directly combined with atoms or molecules on the surface of the material to form a modified layer, the modified layer and the substrate material have no clear interface, the combination is firm, and the phenomenon of falling-off does not exist. And a set of ion implantation metal source is respectively arranged on the front side and the back side of the flexible PI base material in the modification process chamber, so that the embedding modification between the CU material and the base material can be realized, the stress is improved, and the adhesive force is improved.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 4, a ninth chill roll 39 and a tenth chill roll 30 are provided in the modification process chamber 3 adjacent to the first metal source 31, and a fifth vertical chill plate 305 is provided between the ninth chill roll 39 and the tenth chill roll 30, and the fifth vertical chill plate 305 is opposed to the first metal source 31 and is used for cooling the back surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 4, an eleventh cooling roller 311 and a twelfth cooling roller 312 are disposed up and down in the modification process chamber 3 near the second metal source 32, a sixth vertical cooling plate 306 is disposed between the eleventh cooling roller 311 and the twelfth cooling roller 312, and the sixth vertical cooling plate 306 is opposite to the second metal source 32 and is used for cooling the front surface of the flexible PI substrate. The structure is simple, and the process temperature can be conveniently adjusted through the arrangement of the cooling roller; meanwhile, the longitudinal cooling plate is arranged, so that the deformation of the film layer caused by temperature rise can be reduced, and the temperature of a coated product and the temperature of a process chamber can be effectively controlled.

Still further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 4, a swing roll for adjusting the tension is further disposed in the modification process chamber 3, and the specific structure of the swing roll is as shown in fig. 12, which includes a swing output shaft 330, a left swing arm 333 and a right swing arm 334 circumferentially fixed on the swing output shaft 330, a fixed roll 331 disposed on the swing output shaft 330 and located between the left swing arm 333 and the right swing arm 334, and an adjusting swing roll 332 disposed between the left swing arm 333 and the right swing arm 334 and located below the fixed roll 331. When the tension is in the normal range, the fixed roller 331 can swing the output shaft 330 to freely rotate around the center, and the adjusting swing roller 332 can freely rotate around the transverse axis between the left swing arm 333 and the right swing arm 334 to enable the PI film passing through the fixed roller 331 and the adjusting swing roller 332 to be freely conveyed. When the tension fluctuates beyond the normal range, the swing output shaft 330 rotates to drive the left swing arm 333, the right swing arm 334 and the adjusting swing roller 332 to swing left and right around the swing output shaft 330, so as to absorb the tension fluctuation in the moving process of conveying the PI film. The tension fluctuation can be made less than 1N, the PI film conveying speed is 0.5-1m/min, preferably 0.5m/min, and the conveying tension is 10-100N, preferably 32-67N.

Further, as a preferred embodiment of the present invention, but not limited thereto, the arc target ion plating process chamber 4 includes a first arc target ion plating process chamber and a second arc target ion plating process chamber which are symmetrically disposed; the thickness of the generated Cu transition layer can be further improved and ensured by arranging two symmetrical arc target ion plating process chambers. In the embodiment of the utility model, the thickness of Cu transition layer is 5-15nm, and the thickness of preferred Cu transition layer is 10nm.

Still further, as a preferred embodiment of the present invention, but not limited thereto, the magnetron sputtering coating process chamber 5 includes a first magnetron sputtering coating process chamber and a second magnetron sputtering coating process chamber which are symmetrically arranged. Through the magnetron sputtering coating process chamber that sets up two symmetries, can further improve and guarantee the whole thickness of final coating film product copper film, in the embodiment of the utility model provides an, the whole thickness of copper film reaches 100nm.

Further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 2, heaters 11 are respectively disposed above and at the left and right sides of the unwinding roller 12 in the unwinding chamber 1 for primary baking of the flexible PI substrate at a temperature above 300 ℃ to remove water molecules attached to the surface of the PI substrate.

Still further, as a preferred embodiment of the present invention, but not limited thereto, the specific structure of the heater 11 is as shown in fig. 8 and fig. 9, and it at least includes an electric heating wire 111 and a heat radiation plate 112 located above the electric heating wire 111, the electric heating wire 111 is disposed in a winding way and bending way in the same plane, and the heat radiation plate 112 includes three layers of heat radiation plates disposed at intervals up and down, and the heat radiation plate 112 radiates and transmits the heat to the flexible PI substrate to achieve the purpose of uniform heating.

Still further, as a preferred embodiment of the present invention but not limited thereto, as shown in fig. 3, the surface activation process chamber 2 is provided with heaters 11 at the upper left and lower right, respectively, wherein the upper left heater 11 is used for secondary baking of the front surface of the flexible PI substrate, and the lower right heater 11 is used for secondary baking of the back surface of the flexible PI substrate; further removing residual water molecules on the surface of the PI substrate.

Further, as a preferred embodiment of the present invention, but not limited thereto, as shown in fig. 3, the ion source of the surface activation process chamber 2 is located between the upper left and lower right heaters, and includes a first ion source 21 and a second ion source 22, wherein the first ion source 21 is located near the upper left heater 11 and is used for performing the material surface activation treatment on the back surface of the flexible PI substrate, and the second ion source 22 is located near the lower right heater 11 and is used for performing the material surface activation treatment on the front surface of the flexible PI substrate. And the double ion sources are arranged and used for improving the surface activation degree of the flexible PI substrate and destroying water molecules. The utility model discloses in the implementation, the working pressure of surface activation process chamber 2 is 0.05-0.2Pa, and the ion source treatment effect is as shown in the following table:

further, as a preferred embodiment of the present invention, but not limited thereto, the first cooling roller 411, the second cooling roller 412, the third cooling roller 423, the fourth cooling roller 424, the fifth cooling roller 55, the sixth cooling roller 56, the seventh cooling roller 57, the eighth cooling roller 58, the ninth cooling roller 39, the tenth cooling roller 30, the eleventh cooling roller 311, and the twelfth cooling roller 312 have the same structure, and the structure thereof can be referred to fig. 10 and 11. The cooling roller is internally provided with a central input cooling channel and a backflow cooling channel between the central input cooling channel and the surface of the cooling roller, which are mutually circulated, and the heat is taken away through the circulating flow of cooling liquid so as to reduce the internal and surface temperatures of the cooling roller, thereby conveniently adjusting the process temperature.

Still further, as the utility model discloses a preferred embodiment but not the restriction, first vertical cooling plate 401, the vertical cooling plate 402 of second, the vertical cooling plate 503 of third, the vertical cooling plate 504 of fourth, the vertical cooling plate 305 of fifth, the vertical cooling plate 306 of sixth, be the inside cooling plate that is provided with water flow channel and makes things convenient for coolant liquid circulated inflow outflow, water flow channel in the cooling plate, can be directly run through the square passageway that the circulation was realized to the side and accessible outside pipeline around the cooling plate, also can be circuitous the circular passageway that sets up in the cooling plate, moreover, the steam generator is simple in structure, the rete deformation that reducible temperature rise leads to can effectively control the temperature of coating film product and process chamber.

Further, as a preferred embodiment of the present invention but not limited thereto, fig. 13 is a schematic plane development diagram of a first copper film product sample prepared by the coating apparatus of the present invention, the width of which is 260mm, and five rows of test areas in three rows are marked as shown in fig. 13, wherein the three rows of marks are A1, A2, and A3 in sequence, the five rows of marks are a, b, c, d, and e in sequence, the vertical distance between each row and the left and right distance between each row are 100mm, and the result of the sheet resistance uniformity test performed on the first copper film sample is as follows:

still further, as a preferred embodiment of the present invention but not limited thereto, fig. 14 shows a schematic plane development diagram of a second copper film product sample prepared by the coating apparatus of the present invention, the width of which is 260mm, and five rows of three rows of test areas are marked as shown in fig. 14, wherein the three rows of marks are sequentially B1, B2, and B3, the five rows of marks are sequentially a, B, c, d, and e, the vertical distance between each row and the left and right distance between each row are 100mm, and the result of the sheet resistance uniformity test on the second copper film sample is as follows:

according to the square resistance test results of the two samples, the nonuniformity of the square resistance of the copper film product prepared by the coating equipment is less than 5% no matter which line or column of the test area is calibrated.

Still further, as a preferred embodiment of the present invention, but not limited thereto, when the surface adhesion test is performed on the a-column calibration area of the first and second samples (IPC-TM-6502.4.9), the test results are as follows:

according to the surface adhesion test results of the two samples, the surface adhesion of the copper film product prepared by the coating equipment meets the requirement of more than 0.7N/mm.

The foregoing is illustrative of one or more embodiments provided in connection with the detailed description and is not to be construed as limiting the invention to the precise embodiments disclosed herein. All with the utility model discloses a method, structure etc. are similar, the same, or to the utility model discloses make a plurality of technological deductions or replacement under the design prerequisite, all should regard as the utility model discloses a scope of protection.

Claims (7)

1. A surface activation process chamber is applied to winding type copper film vacuum coating equipment and is characterized in that,

heaters are respectively arranged at the upper left side and the lower right side of the surface activation process chamber, wherein the upper left heater is used for carrying out secondary baking on the front surface of the flexible PI base material, and the lower right heater is used for carrying out secondary baking on the back surface of the flexible PI base material;

the ion source of the surface activation process chamber is positioned between the upper left heater and the lower right heater and comprises a first ion source and a second ion source, wherein the first ion source is close to the upper left heater and is used for carrying out material surface activation treatment on the back surface of the flexible PI base material, and the second ion source is close to the lower right heater and is used for carrying out material surface activation treatment on the front surface of the flexible PI base material.

2. The surface-activated process chamber of claim 1, wherein the heater comprises at least one electric heating wire, and a heat radiating plate disposed above the electric heating wire, the electric heating wire being arranged to meander in the same plane, and the heat radiating plate comprising three layers of heat radiating plates disposed at intervals above and below.

3. The surface-activation process chamber of claim 1 or claim 2, wherein the surface-activation process chamber operates at a pressure of from 0.05 Pa to 0.2Pa.

4. The surface-activation process chamber of claim 3, wherein the operating pressure of the surface-activation process chamber is 0.09Pa.

5. The surface activation process chamber of claim 3, wherein the flexible PI substrate has a thickness of 4.5 μm to 75 μm.

6. The surface activation process chamber of claim 3, wherein the flexible PI substrate is transported at a speed of 0.5 to 1m/min.

7. The surface activation process chamber of claim 3, wherein the tension in the surface activation process chamber is between 10N and 100N with fluctuations of less than 1N.

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