CN218735825U - Flexible OLED panel heat radiation structure - Google Patents
Flexible OLED panel heat radiation structure Download PDFInfo
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- CN218735825U CN218735825U CN202222960237.7U CN202222960237U CN218735825U CN 218735825 U CN218735825 U CN 218735825U CN 202222960237 U CN202222960237 U CN 202222960237U CN 218735825 U CN218735825 U CN 218735825U
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Abstract
The utility model discloses a flexible OLED panel heat radiation structure relates to flexible OLED panel heat dissipation technical field. The structure includes: the solar cell comprises a CMOS device, an ALN thin film layer, an anode, an isolation column, an OLED device, a heat dissipation layer, a thin film packaging layer, a CF + BM layer and cover plate glass, wherein the ALN thin film layer covers the CMOS device, heat dissipation particles are doped in isolation column materials, the thickness of the isolation column materials is larger than or equal to the sum of the thickness of the OLED device and the thickness of the thin film packaging layer, and the heat dissipation layer is located between the OLED device and the thin film packaging layer. The utility model provides a pair of flexible OLED panel heat radiation structure is through adding the heat dissipation layer at the device middle part to derive the insulated column and the module heating panel in close contact with of side doping heat dissipation particle, accomplish thermal exchange, operating temperature when having reduced flexible OLED's the luminescence has prolonged the life-span of OLED device.
Description
Technical Field
The utility model relates to a flexible OLED panel heat dissipation technical field, in particular to flexible OLED panel heat radiation structure.
Background
An Organic Light Emitting Diode (OLED) display has characteristics of self-light emitting, low power consumption, wide viewing angle, and the like, and is widely used in the field of flexible display. The silicon-based OLED micro-display adopts the monocrystalline silicon wafer as the active driving back plate, so that the excellent characteristics of high pixel density (Pixels PerInch, PPI), high integration, small volume, easy carrying, good anti-seismic performance, ultralow power consumption and the like are more easily realized, and the silicon-based OLED micro-display is widely applied to near-to-eye realistic fields such as the flexible display field AR, VR and the like.
At present, the traditional flexible OLED micro-display adopts a scheme of white OLED and a color filter, the white OLED efficiency is relatively low, and the light effect loss of the color filter is 70%, so that the electro-optic conversion efficiency of the flexible OLED micro-display is insufficient, and in order to reach a certain specific brightness, a larger driving current needs to be applied, so that the heating of the product is very serious, the display of the flexible OLED product is severely limited, especially the application of near-eye display such as VR and AR, and the like, and the improvement of the heat dissipation performance of the flexible OLED micro-display product is of great importance.
Disclosure of Invention
The to-be-solved technical problem of the utility model lies in providing a flexible OLED panel heat radiation structure, through adding the heat dissipation layer at the device middle part to derive the insulated column and the module heating panel in close contact with of side doping heat dissipation particle, accomplish thermal exchange, operating temperature when having reduced flexible OLED's the luminescence has prolonged the life-span of OLED device.
In order to solve the technical problem, the utility model provides a flexible OLED panel heat radiation structure, include:
a CMOS device;
the ALN thin film layer covers the CMOS device, and a plurality of silicon channels Via are formed in the ALN thin film layer;
an anode patterned over the ALN thin film layer;
the isolation column is used for limiting an evaporation AA area, the thickness of the isolation column is greater than or equal to the sum of the thickness of the OLED device and the thickness of the thin film packaging layer, and heat dissipation particles are doped in the isolation column material;
the OLED device is prepared in the isolation column region layer by layer and is connected with the CMOS device through the silicon channel Via;
a heat dissipation layer formed over the OLED device;
the thin film packaging layer is formed above the heat dissipation layer;
the CF + BM layer is tightly attached to the upper part of the thin film packaging layer;
and the cover plate glass is tightly attached above the CF + BM layer.
Further, the thin film encapsulation layer includes:
the first inorganic thin film layer is formed in the area limited by the isolation column and covers the OLED device;
the organic thin film layer is formed in the area limited by the isolation column and covers the first inorganic thin film layer;
and the second inorganic thin film layer is formed in the area limited by the isolation column and covers the organic thin film layer.
Further, the material of the heat dissipation layer comprises graphene, nitride, boron nitride, polycrystalline boron nitride or aluminum oxide.
Furthermore, the thickness range of the heat dissipation layer is 0.4 um-0.8 um.
Further, the thickness of the isolation column ranges from 4um to 6um.
Further, the isolation column is made of materials including fluorinated polyimide, epoxy resin, polyacrylate and polyvinyl acetate; the heat dissipation particles comprise carbon particles, graphene particles and metal particles.
Further, the metal particles comprise titanium particles, copper particles and aluminum particles, and the diameter of the metal particles ranges from 50nm to 150nm.
In a second aspect, the present invention provides a method for manufacturing a heat dissipation structure of a flexible OLED panel, including:
preparing a CMOS device as a pixel light-emitting drive circuit; the CMOS device is covered by the ALN thin film layer, so that the effects of insulation and packaging are achieved, and heat is conducted to the substrate; then, forming a silicon channel Via by opening a hole in the ALN thin film layer, sputtering an anode layer of the OLED device and patterning, wherein the anode layer is filled in the silicon channel Via and is used for connecting the OLED device and the CMOS device;
secondly, preparing an OLED device on the basis of the first step, coating an isolating column doped with heat dissipation particles on the anode layer for limiting an AA evaporation area, wherein the thickness of the isolating column is greater than or equal to the sum of the thickness of the OLED device and the thickness of a thin film packaging layer, and then sequentially evaporating a hole injection layer HIL, a hole transport layer HTL, a light emitting layer EML, an electron transport layer ETL, an electron injection layer EIL and a cathode through an evaporator to finish the preparation of the OLED device;
step three, on the basis of the step two, preparing a heat dissipation layer in the isolation column limiting area for rapidly conducting the middle heat of the OLED device to the heat dissipation isolation column at the edge of the device, and then sequentially preparing a first inorganic thin film layer, an organic thin film layer and a second inorganic thin film layer above the heat dissipation layer;
and step four, preparing a CF + BM layer on the basis of the step three, and finally attaching a layer of cover plate glass.
Furthermore, the material of the heat dissipation layer comprises graphene, nitride, boron nitride, polycrystalline boron nitride or aluminum oxide, and the thickness range is 0.4-0.8 um.
Further, the isolation column is made of materials including fluorinated polyimide, epoxy resin, polyacrylate and polyvinyl acetate; the heat dissipation particles include carbon particles, graphene particles, or metal particles.
The utility model has the advantages of as follows:
1. the isolation column doped with the heat dissipation particles inside is arranged, so that the side heat transfer effect is enhanced; by insulating the bottom SiO 2 Change into ALN (high heat conduction material) to add the heat dissipation layer in the middle part of the device, not only can dispel the heat simultaneously with the device bottom, the unnecessary heat in device middle part, and the insulated column that the side has filled the heat dissipation particle in addition and module heating panel in close contact with, accomplish thermal exchange, operating temperature when having reduced flexible OLED's luminescence has prolonged OLED deviceThe life of (2);
2. the pixel defining layer of the OLED and the barrier column packaged by the thin film are prepared by the same process, so that one process is saved, and the output of cost is reduced.
Drawings
The invention will be further described with reference to the following examples with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a prior art flexible OLED device;
fig. 2 is a schematic overall structure diagram of an embodiment of the present invention;
fig. 3 is a top view of an isolation column according to an embodiment of the present invention;
FIG. 4 is a schematic view of a manufacturing process according to an embodiment of the present invention;
FIG. 5 is a second schematic view of the manufacturing process of the embodiment of the present invention;
fig. 6 is a third schematic view of the manufacturing process of the embodiment of the present invention.
Detailed Description
The embodiment of the utility model provides a flexible OLED panel heat radiation structure is through adding the heat dissipation layer at the device middle part to derive the insulated column and the module heating panel in close contact with of side packing heat dissipation particle, accomplish thermal exchange, operating temperature when having reduced flexible OLED's the luminescence has prolonged the life-span of OLED device.
The embodiment of the utility model provides an in technical scheme, the general thinking is as follows:
the structure of a flexible OLED device in the prior art is shown in FIG. 1:
the display driving circuit CMOS device 1' is manufactured by using monocrystalline silicon as a substrate and adopting a standard CMOS process on the monocrystalline silicon substrate so as to provide functional circuits such as pixel driving and the like required by OLED display. And then manufacturing an OLED light-emitting unit on a monocrystalline silicon substrate 2', wherein a silicon channel 3' is arranged in the monocrystalline silicon substrate 2 '. Firstly, on the substrate, a metal with high reflectivity is made as the anode 4', and the anode has high reflectivity so as to realize high light-emitting efficiency. Then, a pixel defining layer 5 'is formed, and organic semiconductor layers such as a hole injection layer 6', a hole transport layer 7', a light emitting layer 8', an electron transport layer 9', and an electron injection layer 10' are formed in the pixel defining layer region, thereby forming an OLED main body light emitting unit. In order to achieve light exit from the top, a semi-transparent metal layer needs to be made as the cathode 11'. Because the OLED device is not easy to damage by water, oxygen and the like, a film packaging layer (comprising the isolation column 12', the first inorganic film layer 13', the organic film layer 14 'and the second inorganic film layer 15') needs to be manufactured on the cathode, and finally, transparent adhesive is coated in a spinning mode to be attached to the Colorfilter (CF + BM layer 16 ') and the cover glass 17', so that full-color display of the device is achieved.
The utility model provides a heat radiation structure of flexible OLED panel and a manufacturing method thereof, wherein the pixel definition layer of OLED in the prior art and the isolation column packaged by a film are prepared by the same process, one process is saved, the output of cost is reduced, and heat radiation nano particles are hybridized in the organic glue of the isolation column, so that the side heat transfer effect is enhanced; then insulating the bottom of the SiO layer 2 Change into ALN (high heat conduction material) to add the heat dissipation layer in the middle part of the device, not only can dispel the heat simultaneously with the device bottom, the unnecessary heat in device middle part, the insulated column that the side has filled the heat dissipation particle in addition and module heating panel in close contact with, accomplish thermal exchange, operating temperature when having reduced flexible OLED's the luminescence has prolonged the life-span of OLED device.
The present embodiment provides a flexible OLED panel heat dissipation structure, as shown in fig. 2 and 3, including:
a CMOS device 1;
the ALN thin film layer 2 covers the CMOS device, and a plurality of silicon channels Via21 are formed in the ALN thin film layer;
an anode 3 patterned over the ALN thin film layer;
the isolation column 4 is used for limiting an AA evaporation area, the thickness of the isolation column is greater than or equal to the sum of the thickness of the OLED device and the thickness of the thin film packaging layer, and heat dissipation particles are doped in the isolation column material; the pixel defining layer of the OLED and the barrier column packaged by the thin film are prepared by the same process, so that one process is saved, and the output of cost is reduced;
the OLED device 5 is prepared in the region of the isolation column 4 layer by layer and is connected with the CMOS device 1 through the silicon channel Via21;
a heat dissipation layer 6 formed over the OLED device 5;
a thin film encapsulation layer 7 formed above the heat dissipation layer 6;
the CF + BM layer 8 is tightly attached to the upper part of the thin film packaging layer 7;
and the cover glass 9 is tightly attached to the upper part of the CF + BM layer 8.
The heat dissipation nano particles 41 are hybridized inside the organic glue of the isolation column 4, so that the side heat transfer effect is enhanced; by insulating the bottom SiO 2 Change into ALN (high heat conduction material) to add heat dissipation layer 6 in the middle part of the device, not only can dispel the heat simultaneously with the unnecessary heat in device bottom, device middle part, the isolated column 4 that the side has filled the heat dissipation particle in addition and module heating panel in close contact with, accomplish thermal exchange, operating temperature when having reduced flexible OLED's the luminescence has prolonged the life-span of OLED device.
In one possible implementation, the thin film encapsulation layer 7 includes:
a first inorganic thin film layer 71 formed in the region defined by the isolation pillars 4 and covering the OLED device 5;
an organic thin film layer 72 formed in the region defined by the isolation pillars 4 and covering over the first inorganic thin film layer 71;
and a second inorganic thin film layer 73 formed in the region defined by the isolation pillars 4 and covering the organic thin film layer 72.
In a possible implementation, the material of the heat dissipation layer 6 includes graphene, nitride, boron nitride, polycrystalline boron nitride, or aluminum oxide; the thickness range is 0.4 um-0.8 um.
The thickness range of the isolation column 4 is 4 um-6 um; the material comprises fluorinated polyimide, epoxy resin, polyacrylate and polyvinyl acetate; the heat dissipation particles 41 include carbon particles, graphene particles, and metal particles, wherein the metal particles include titanium particles, copper particles, and aluminum particles, and the diameter range is 50nm to 150nm. It is noted that the material of the spacer 4 of the present invention is a direct application of the prior art, not an improvement of the material itself.
In the production process of the silicon-based OLED panel heat dissipation structure, the manufacturing method can be carried out through the following steps:
firstly, preparing a CMOS device 1 on a silicon chip as a pixel light-emitting drive circuit; secondly, the ALN film 2 is adopted to cover the CMOS device 1, so that the effects of insulation and packaging are achieved, the ALN film 2 has excellent thermal conductivity and thermal conductivity (the thermal conductivity is more than or equal to 170W/m.k, and the thermal conductivity of silicon oxide
Thermal conductivity of aluminum nitride is silicon oxide, which is not reached by silicon nitride) helps to conduct heat to the substrate, which is beneficial to reducing the operating temperature of the device; then, forming a silicon channel Via (ThroughSiliconVia) 21 in the ALN film 2, and finally sputtering a layer of anode 3 to form a bridge for connecting the anode 3 in the OLED device and the CMOS device 1, as shown in FIG. 4;
step two: as shown in fig. 5, an OLED device 5 is prepared on the basis of the first step, a separator 4 (used for replacing a pixel defining layer in the prior art) is coated by a Coater or IJP (inkjet printing), the separator 4 not only defines an evaporation AA region, but also has an isolating function, so as to form an evaporation packaging printing isolation layer, prevent organic light-emitting ink or organic packaging glue from flowing and spreading to the edge of glass, and the separator 4 is doped with heat-dissipating particles 41 to help the white OLED emit excessive heat during light emission, so as to prolong the life of the OLED device, and then a hole injection layer HIL51, a hole transport layer HTL52, a light-emitting layer EML53, an electron transport layer ETL54, an electron injection layer EIL55, and a cathode 56 are sequentially evaporated by an evaporator, so as to complete the preparation of the OLED device 5;
step three: as shown in fig. 6, on the basis of the second step, a heat dissipation layer 6 is prepared, the heat dissipation layer 6 is used for arranging a layer of integral heat dissipation layer in the middle of the whole device, which is beneficial to rapidly conducting the middle heat of the OLED device 5 into the heat dissipation isolation pillars 4 at the edges of the device, reducing the heat accumulation in the middle of the device, matching the light-emitting rate of the heat dissipation layer 6 with the light-emitting rate of the upper and lower films to a certain extent, increasing the light-emitting rate of the light-emitting device, then preparing a film encapsulation layer 7, depositing a first inorganic film 71 in the region defined by the isolation pillars 4, then printing an organic buffer layer 72 through IJP, and then depositing a second inorganic film encapsulation layer 73;
step four: and on the basis of the third step, preparing a Colorfilter (CF + BM layer 8), finally attaching a layer of cover glass 9 to form glass package, blocking water and oxygen from entering the device, and finally completing the flexible OLED panel heat dissipation structure shown in FIG. 2.
The utility model enhances the side heat transfer effect through the isolation column doped with heat radiation particles inside; by insulating the bottom SiO 2 The heat dissipation layer is added in the middle of the device, so that the redundant heat at the bottom and in the middle of the device can be dissipated at the same time, the isolation columns with the side edges filled with heat dissipation particles are tightly contacted with the module heat dissipation plate, the heat exchange is completed, the operating temperature of the flexible OLED during the light emission is reduced, and the service life of the OLED device is prolonged; the pixel defining layer of the OLED and the barrier column packaged by the thin film are prepared by the same process, so that one process is saved, and the output of cost is reduced.
Although specific embodiments of the invention have been described herein, it will be understood by those skilled in the art that the specific embodiments described are illustrative only and are not limiting upon the scope of the invention, as equivalent modifications and variations within the spirit of the invention are intended to be covered by the appended claims.
Claims (7)
1. A flexible OLED panel heat dissipation structure, comprising:
a CMOS device;
the ALN thin film layer covers the CMOS device, and a plurality of silicon channels Via are formed in the ALN thin film layer;
an anode patterned over the ALN thin film layer;
the isolation column is used for limiting an AA evaporation area, the thickness of the isolation column is greater than or equal to the sum of the thickness of the OLED device and the thickness of the thin film packaging layer, and heat dissipation particles are doped in the isolation column material;
the OLED device is prepared in the isolation column region layer by layer and is connected with the CMOS device through the silicon channel Via;
a heat dissipation layer formed over the OLED device;
the thin film packaging layer is formed above the heat dissipation layer;
the CF + BM layer is tightly attached to the upper part of the thin film packaging layer;
and the cover plate glass is tightly attached above the CF + BM layer.
2. The flexible OLED panel heat dissipation structure of claim 1, wherein: the thin film encapsulation layer includes:
the first inorganic thin film layer is formed in the area limited by the isolation column and covers the OLED device;
the organic thin film layer is formed in the area limited by the isolation column and covers the first inorganic thin film layer;
and the second inorganic thin film layer is formed in the area limited by the isolation column and covers the organic thin film layer.
3. The flexible OLED panel heat dissipation structure of claim 1, wherein: the material of the heat dissipation layer comprises graphene, nitride, boron nitride, polycrystalline boron nitride or aluminum oxide.
4. The flexible OLED panel heat dissipation structure of claim 1 or 3, wherein: the thickness range of the heat dissipation layer is 0.4 um-0.8 um.
5. The flexible OLED panel heat dissipation structure of claim 1, wherein: the thickness range of the isolation column is 4 um-6 um.
6. The flexible OLED panel heat dissipation structure of claim 1, wherein: the isolation column is made of fluorinated polyimide, epoxy resin, polyacrylate and polyvinyl acetate; the heat dissipation particles comprise carbon particles, graphene particles and metal particles.
7. The flexible OLED panel heat dissipation structure of claim 6, wherein: the metal particles comprise titanium particles, copper particles and aluminum particles, and the diameter range of the metal particles is 50 nm-150 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222960237.7U CN218735825U (en) | 2022-11-03 | 2022-11-03 | Flexible OLED panel heat radiation structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222960237.7U CN218735825U (en) | 2022-11-03 | 2022-11-03 | Flexible OLED panel heat radiation structure |
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| Publication Number | Publication Date |
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| CN218735825U true CN218735825U (en) | 2023-03-24 |
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| CN202222960237.7U Active CN218735825U (en) | 2022-11-03 | 2022-11-03 | Flexible OLED panel heat radiation structure |
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