CN218675352U - Multilayer film crystal wafer - Google Patents
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- CN218675352U CN218675352U CN202223433705.1U CN202223433705U CN218675352U CN 218675352 U CN218675352 U CN 218675352U CN 202223433705 U CN202223433705 U CN 202223433705U CN 218675352 U CN218675352 U CN 218675352U
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Abstract
The utility model relates to a multilayer film crystal piece belongs to accurate optical element preparation technical field. The utility model provides a multilayer film crystal wafer, which comprises a substrate, wherein a bottom layer, a CoCr film layer, an Sb film layer and a protective layer are sequentially stacked on the substrate; a first ultramicro spacing layer is stacked between the CoCr film layer and the Sb film layer, a second ultramicro spacing layer is stacked between the Sb film layer and the protective layer, and the CoCr film layer, the first ultramicro spacing layer, the Sb film layer and the second ultramicro spacing layer are arranged periodically. The optical constants of the CoCr and Sb materials in the extreme ultraviolet band are proper, and the optical properties are excellent; the first ultramicro spacing layer and the second ultramicro spacing layer BN film layer are inserted between the CoCr film layers and the Sb film layers, so that mutual diffusion between the CoCr film layers and the Sb film layers is prevented, the reflectivity is good, and the thermal damage resistance of the multilayer film crystal plate is improved.
Description
Technical Field
The utility model belongs to the technical field of the preparation of accurate optical element, specifically, relate to a multilayer film crystal piece.
Background
In the electromagnetic spectrum, the extreme ultraviolet and soft X-ray bands, with wavelengths between a few nanometers and tens of nanometers, are very specific and important bands. The refractive index of all materials in this band is close to 1, which means that light is hardly refracted in the medium. The 'water window' (E =280-540 eV) band is particularly important, water (oxygen) is substantially transparent, and carbon has a strong ability to absorb (most of the constituent elements in the living matter). The soft X-ray of the wave band is used as an information carrier, so that holographic photography can be carried out on a biological sample under the condition of good contrast, microscopic imaging can be carried out on living cells, and the soft X-ray can also be used as a light source for plasma diagnosis. However, in the water window wavelength band, the normal incidence reflectivity of any single layer film is very low, and only a multilayer film reflective element can be used, so that the multilayer film reflective mirror is a crucial element for the wavelength band.
However, in the research of ultraviolet multilayer film heat damage resistance, the physical essence of the heat damage of the multilayer film is mutual diffusion among materials of each layer in the multilayer film and phase change of a diffusion layer. The diffusion rate between two materials forming the multilayer film at normal temperature is very low, so the interface is stable; however, under high temperature conditions, the ratio of activated atoms in the film layer is greatly increased, the diffusion rate between the two materials is rapidly increased, and a more stable diffusion layer is formed, so that the internal structure of the multilayer film is changed, and finally the optical performance of the multilayer film is reduced.
The patent with the application number of 201610111320.3 discloses a CoCr/Sb extreme ultraviolet multilayer film intraocular lens monochromator prepared by nitrogen reactive sputtering, the CoCr and Sb materials provided by the invention have proper optical constants in an extreme ultraviolet band, and the CoCr/Sb multilayer film intraocular lens monochromator has excellent optical performance. However, the film forming property of the CoCr and Sb interface is not good enough, and the thermal damage resistance is not enough, so that the optical performance of the multilayer film artificial crystal monochromator is influenced.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem existing in the background technology, the utility model provides a multilayer film crystal wafer.
The purpose of the utility model can be realized by the following technical proposal:
the multilayer film crystal wafer comprises a substrate, wherein a bottom layer, a CoCr film layer, an Sb film layer and a protective layer are sequentially stacked on the substrate;
a first ultramicro spacing layer is stacked between the CoCr film layer and the Sb film layer, a second ultramicro spacing layer is stacked between the Sb film layer and the protective layer, and the CoCr film layer, the first ultramicro spacing layer, the Sb film layer and the second ultramicro spacing layer are arranged periodically.
Preferably, the first ultramicro spacing layer and the second ultramicro spacing layer are both BN film layers, and the thicknesses of the first ultramicro spacing layer and the second ultramicro spacing layer are the same and are both 0.6-1.0nm.
Preferably, the substrate is one of silica gel or glass.
Preferably, the bottom layer is plated on the substrate, the material is metal Cr, and the thickness is 5-10nm.
Preferably, the thickness of the CoCr film layer is 1-5nm.
Preferably, the thickness of the Sb film layer is 1-5nm.
Preferably, the CoCr film layer, the first ultramicro spacing layer, the Sb film layer and the second ultramicro spacing layer are arranged periodically, and the period number is 50-100.
Preferably, the thickness ratio of the CoCr film layer to the Sb film layer is controlled to be 1:1.
Preferably, the protective layer is B 4 One of the C film layer or the C film layer is 1-5nm thick.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model provides a multilayer film crystal wafer, which comprises a substrate, wherein a bottom layer, a CoCr film layer, an Sb film layer and a protective layer are sequentially stacked on the substrate; a first ultramicro spacing layer is stacked between the CoCr film layer and the Sb film layer, a second ultramicro spacing layer is stacked between the Sb film layer and the protective layer, and the CoCr film layer, the first ultramicro spacing layer, the Sb film layer and the second ultramicro spacing layer are arranged periodically. The optical constants of the CoCr and Sb materials in the extreme ultraviolet band are proper, and the optical properties are excellent; the first ultramicro spacing layer and the second ultramicro spacing layer BN film layer are inserted between the CoCr film layers and the Sb film layers, so that mutual diffusion between the CoCr film layers and the Sb film layers is prevented, the reflectivity is good, and the thermal damage resistance of the multilayer film crystal plate is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural view of a multilayer film crystal wafer according to the present invention;
fig. 2 is a working schematic diagram of the multilayer film crystal plate of the present invention.
In the drawings, the reference numbers indicate the following list of parts:
1. a substrate; 2. a bottom layer; 3. a CoCr film layer; 4. an Sb film layer; 5. a protective layer; 6. a first ultramicro spacer layer; 7. a second ultrafine spacer layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, a multilayer film crystal wafer includes a substrate 1, wherein a bottom layer 2, a CoCr film layer 3, an Sb film layer 4 and a protective layer 5 are sequentially stacked on the substrate 1;
a first ultramicro spacing layer 6 is stacked between the CoCr film layer 3 and the Sb film layer 4, a second ultramicro spacing layer 7 is stacked between the Sb film layer 4 and the protective layer 5, and the CoCr film layer 3, the first ultramicro spacing layer 6, the Sb film layer 4 and the second ultramicro spacing layer 7 are arranged periodically.
In this embodiment, the first ultrafine spacing layer 6 and the second ultrafine spacing layer 7 are both BN film layers, and the first ultrafine spacing layer 6 and the second ultrafine spacing layer 7 have the same thickness and are both 0.6-1.0nm.
It will be appreciated that the growth of the diffusion layer at the interface between the two materials of the multilayer film is controlled by a diffusion-reaction mechanism, and that in the initial stage, the interface diffusion layer is thin and diffuses relatively quickly across the interface. In this case, the chemical reaction that forms the interfacial diffusion layer is rate-determining; as the interface diffusion layer becomes thicker and diffusion flow becomes slower, diffusion through the interface becomes the main factor in determining the rate, a process called diffusion-controlled interface growth. The key to improving the thermal damage resistance of the multilayer film is to slow down the reaction diffusion process of the multilayer film.
In this embodiment, the substrate 1 is one of silica gel and glass.
In this embodiment, the bottom layer 2 is plated on the substrate 1, and the material is metal Cr with the thickness of 5-10nm.
In the embodiment, the thickness of the CoCr film layer 3 is 1-5nm;
in this embodiment, the thickness of the Sb film layer 4 is 1 to 5nm;
in this embodiment, the thickness ratio of the CoCr film layer 3 to the Sb film layer 4 is controlled to be 1:1.
In this embodiment, the CoCr film layer 3, the first ultrafine spacer layer 6, the Sb film layer 4, and the second ultrafine spacer layer 7 are arranged periodically with a period number of 50 to 100.
In this embodiment, the protective layer 5 is B 4 One of the C film layer or the C film layer is 1-5nm thick.
The working principle is as follows:
referring to fig. 2, incident light enters the multilayer film through the protective layer 5, the periodic circulating layer composed of the second ultrafine spacer layer 7, the Sb film layer 4, the first ultrafine spacer layer 6, and the CoCr film layer 3, and the primer layer 2 reflects and emits reflected light at each interface. On the other hand, the BN film layers of the first ultramicro spacing layer 6 and the second ultramicro spacing layer 7 prevent mutual diffusion between the CoCr film layer 3 and the Sb film layer 4, and the high reflectivity is achieved, so that the thermal damage resistance of the multilayer film crystal piece is improved.
In the description of the specification, reference to the description of "one embodiment," "an example," "a specific example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely exemplary and illustrative of the structure of the invention and various modifications, additions or substitutions as are known to those skilled in the art may be made to the described embodiments without departing from the scope of the invention as defined in the accompanying claims.
Claims (9)
1. A multilayer film crystalline sheet, characterized by: the multilayer film crystal wafer comprises a base body (1), wherein a bottom layer (2), a CoCr film layer (3), an Sb film layer (4) and a protective layer (5) are sequentially stacked on the base body (1);
a first ultramicro spacing layer (6) is stacked between the CoCr film layer (3) and the Sb film layer (4), a second ultramicro spacing layer (7) is stacked between the Sb film layer (4) and the protective layer (5), and the CoCr film layer (3), the first ultramicro spacing layer (6), the Sb film layer (4) and the second ultramicro spacing layer (7) are arranged periodically.
2. The multilayer film crystalline sheet of claim 1, wherein: the first ultramicro spacing layer (6) and the second ultramicro spacing layer (7) are both BN film layers, and the thicknesses of the first ultramicro spacing layer (6) and the second ultramicro spacing layer (7) are the same and are both 0.6-1.0nm.
3. The multilayer film crystalline sheet of claim 1, wherein: the substrate (1) is one of silica gel or glass.
4. The multilayer film crystalline sheet of claim 1, wherein: the bottom layer (2) is plated on the substrate (1) and is made of metal Cr with the thickness of 5-10nm.
5. The multilayer film crystalline sheet of claim 1, wherein: the thickness of the CoCr film layer (3) is 1-5nm.
6. The multilayer film crystalline sheet of claim 1, wherein: the thickness of the Sb film layer (4) is 1-5nm.
7. The multilayer film crystalline sheet of claim 1, wherein: the thickness ratio of the CoCr film layer (3) to the Sb film layer (4) is controlled to be 1:1.
8. The multilayer film crystalline sheet of claim 1, wherein: the CoCr film layer (3), the first ultramicro spacing layer (6), the Sb film layer (4) and the second ultramicro spacing layer (7) are arranged periodically, and the periodicity is 50-100.
9. The multilayer film crystal according to claim 1, wherein: the protective layer (5) is B 4 One of the C film layer or the C film layer is 1-5nm thick.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223433705.1U CN218675352U (en) | 2022-12-21 | 2022-12-21 | Multilayer film crystal wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223433705.1U CN218675352U (en) | 2022-12-21 | 2022-12-21 | Multilayer film crystal wafer |
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| CN218675352U true CN218675352U (en) | 2023-03-21 |
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| CN202223433705.1U Active CN218675352U (en) | 2022-12-21 | 2022-12-21 | Multilayer film crystal wafer |
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