CN218658381U - Grinding device - Google Patents

Abstract

The present disclosure provides a polishing apparatus, including a polishing platen provided with a polishing pad; the grinding head is positioned above the grinding platform and can move relative to the grinding pad, and a piece to be ground can be loaded between the grinding head and the grinding platform; the first conducting layer is arranged between the grinding platform and the grinding pad; the second conducting layer is arranged on the grinding head; the energy supply piece is respectively connected with the first conducting layer and the second conducting layer, so that the first conducting layer, the grinding piece and the second conducting layer form a capacitor; and the capacitance measuring instrument is connected with the capacitor and can measure the capacitance of the capacitor. According to the polishing device, the first conductive layer and the second conductive layer are arranged to form the capacitor, the thickness of each part on the polishing pad can be further obtained according to the measured capacitance of the capacitor, and the abnormal condition of the polishing pad in the using process can be found visually.

Description

Grinding device

Technical Field

The present disclosure relates to the field of semiconductor manufacturing equipment, and more particularly, to a polishing apparatus.

Background

The Chemical-Mechanical Planarization (CMP) process is a key process for realizing wafer surface Planarization in the semiconductor manufacturing process, and the whole CMP process makes the polished wafer surface meet the requirements of high Planarization, low surface roughness and low defect by means of the highly organic combination between the Mechanical grinding effect of nano abrasive and the Chemical effect of various Chemical reagents.

The polishing pad is a common consumable in the CMP process, and needs to be replaced after the polishing pad reaches the service life, and the current common practice in the industry is to calculate the service life according to the past use experience or the number of wafers polished by a single polishing pad. However, the actual life of the polishing pad cannot be directly detected based on the past experience of use or the number of wafers polished by a single polishing pad, which often results in waste of replacing the polishing pad, and the abnormal condition of the polishing pad during use cannot be found based on the past experience of use or the number of wafers polished by a single polishing pad.

SUMMERY OF THE UTILITY MODEL

The present disclosure provides a grinding apparatus to solve at least some of the technical problems of the prior art.

A grinding apparatus according to the present disclosure includes: the polishing device comprises a polishing platform, a polishing pad and a polishing head, wherein the polishing platform is provided with the polishing pad; the grinding head is positioned above the grinding platform and can move relative to the grinding pad, and a piece to be ground can be loaded between the grinding head and the grinding platform; a first conductive layer disposed between the polishing platen and the polishing pad; a second conductive layer disposed on the polishing head; the energy supply piece is respectively connected with the first conductive layer and the second conductive layer, so that the first conductive layer, the grinding pad and the second conductive layer form a capacitor; and the capacitance measuring instrument is connected with the capacitor and can measure the capacitance of the capacitor.

In one embodiment, the first conductive layer and the polishing platen satisfy a parallel condition, and the second conductive layer and the first conductive layer satisfy a parallel condition.

In an embodiment, the polishing apparatus further includes a first control portion, and the first control portion is connected to the polishing head and can drive the polishing head to move in a first plane.

In one embodiment, the first plane and the polishing platen satisfy a parallel condition.

In an embodiment, the polishing apparatus further includes a second control portion, and the second control portion is connected to the polishing head and can drive the polishing head to rotate around a rotation center.

In an embodiment, the polishing head includes a main body, and a receiving groove is formed at an end of the main body close to the polishing platen for receiving a member to be polished.

In an implementation manner, an arc-shaped connecting section is arranged at the outer edge of the main body, the second conductive layer is arc-shaped, and the second conductive layer is attached to the arc-shaped connecting section; be provided with the wire in the main part, the second conducting layer passes through the wire with the energy supply subassembly is connected.

In an embodiment, the outer edge of the main body has an arc-shaped connecting section, the main body extends outward at the position of the arc-shaped connecting section to form a protruding portion, and the second conductive layer is disposed on a side of the protruding portion close to the polishing platen.

In one embodiment, the first conductive layer is a metal layer or a metal oxide layer.

In one embodiment, the second conductive layer is a metal layer or a metal oxide layer.

In the disclosure, the grinding device is provided with a grinding head and is used for grinding a piece to be ground which is placed on a grinding pad; the first conducting layer is arranged between the grinding platform and the grinding pad, the second conducting layer is arranged on the grinding head, and the energy supply piece is respectively connected with the first conducting layer and the second conducting layer, so that the grinding pad forms a capacitor between the first conducting layer and the second conducting layer, and is connected with the formed capacitor through the capacitance measuring instrument to measure the capacitance of the formed capacitor. Therefore, the first conductive layer and the second conductive layer are arranged to form the capacitor, so that the thickness of each part on the polishing pad can be obtained according to the measured capacitance of the capacitor, and the abnormal condition of the polishing pad in the using process can be visually found.

It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present disclosure, nor do they limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following description.

Drawings

The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:

in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

FIG. 1 shows a schematic view of the overall structure of an exemplary embodiment of the present disclosure;

FIG. 2 illustrates a top view of an exemplary embodiment of a grinding apparatus of the present disclosure;

fig. 3 shows an overall configuration diagram of a grinding apparatus according to an exemplary embodiment of the present disclosure (a main body is provided with a protrusion at its outer periphery).

The reference numbers in the figures illustrate: 1. a grinding platform; 2. a polishing pad; 3. a grinding head; 4. a member to be ground; 5. a first conductive layer; 6. a second conductive layer; 7. an energy supply member; 8. a capacitance measuring instrument; 31. a main body; 32. a containing groove; 33. a wire; 34. a protrusion; 35. an arc-shaped connecting section.

Detailed Description

To make the objects, features and advantages of the present disclosure more apparent and understandable, the embodiments of the present disclosure will be described in detail and completely with reference to the accompanying drawings, and obviously, the described embodiments are only a part of the embodiments of the present disclosure, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.

Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

Referring to fig. 1 and 2, a polishing apparatus according to an exemplary embodiment of the disclosure includes a polishing platform 1 and a polishing head 3, a polishing pad 2 is disposed on the polishing platform 1, the polishing head 3 is located above the polishing platform 1 and can move relative to the polishing pad 2, and a to-be-polished member 4 can be carried between the polishing head 3 and the polishing platform 1. The grinding device further comprises a first conducting layer 5, a second conducting layer 6, an energizing member 7 and a capacitance measuring instrument 8. The first conductive layer 5 is disposed between the polishing platen 1 and the polishing pad 2, the second conductive layer 6 is disposed on the polishing head 3, and the energy supplying member 7 is connected to the first conductive layer 5 and the second conductive layer 6, respectively, so that the first conductive layer 5, the polishing pad 2, and the second conductive layer 6 form a capacitor. The capacitance measuring instrument 8 is connected to the capacitor and is capable of measuring the capacitance of the capacitor.

In this embodiment, the energizing member 7 is typically a power source, and the energizing member 7 is connected to the first conductive layer 5 and the second conductive layer 6, respectively, for forming a parallel capacitor upon application of a voltage between the first conductive layer 5 and the second conductive layer 6. The parallel capacitor is connected with a capacitance measuring instrument 8, so that the capacitance of the parallel capacitor can be measured. Since the dielectric constant of the medium (i.e., polishing pad 2) between first conductive layer 5 and second conductive layer 6 is constant, the facing area (i.e., the area of the overlapping region) of first conductive layer 5 and second conductive layer 6 is also constant. As the polishing pad 2 is used, the thickness of the polishing pad 2 varies, resulting in a variation in the distance between the first conductive layer 5 and the second conductive layer 6, and thus a variation in capacitance with a variation in the distance between the two conductive layers. Thus, according to the formula:

C＝εS/d

by detecting the change in the capacitance of the capacitor, the change in the distance between the first conductive layer 5 and the second conductive layer 6 is obtained, and the change in the thickness of the polishing pad 2 is obtained. Specifically, the capacitance measuring instrument 8 measures the capacitance between the first conductive layer 5 and the second conductive layer 6, so according to the above formula, the distance between the first conductive layer 5 and the second conductive layer 6 can be measured according to the capacitance measured by the capacitance measuring instrument 8; since the initial thickness of the polishing pad 2 is generally uniform, the initial thickness of the polishing pad 2 can be measured before detection, that is, the initial thickness of the polishing pad 2 is known, and the thickness of the polishing pad 2 changes as the polishing head performs polishing, but the difference between the distance between the two conductive layers and the thickness of the polishing pad 2 is always constant, so that the distance between the first conductive layer 5 and the second conductive layer 6 changing with time can be directly converted into the thickness change of the polishing pad 2, and the specific value of the thickness of the polishing pad 2 can also be known. In the above equation, C is the capacitance between first conductive layer 5 and second conductive layer 6, ∈ is the dielectric constant of the medium between first conductive layer 5 and second conductive layer 6, S is the facing area of first conductive layer 5 and second conductive layer 6, and d is the distance between first conductive layer 5 and second conductive layer 6.

In the actual production process, along with the movement of the polishing head 3 relative to the polishing pad 2, the capacitance measuring instrument 8 can calculate the capacitance of different areas of the polishing pad 2, so that the thickness of the corresponding area of the polishing pad 2 is calculated, and the overall thickness appearance of the polishing pad 2 can be visually presented. In addition, the working time of the polishing head 3 in different areas of the polishing platform 1 can be adjusted by a built-in algorithm, so as to adjust the uniformity of the polishing pad 2. According to the thickness and the shape of the grinding pad 2 detected on line, the abnormal condition of the grinding pad 2 can be found in time, and the abnormal condition of the piece 4 to be ground is avoided.

In the present embodiment, since the polishing apparatus has the polishing head 3, it is possible to polish the object 4 to be polished placed on the polishing pad 2; the first conductive layer 5 is arranged between the polishing platform 1 and the polishing pad 2, the second conductive layer 6 is arranged on the polishing head 3, and the energy supply member 7 is respectively connected with the first conductive layer 5 and the second conductive layer 6, so that the polishing pad 2 forms a capacitor between the first conductive layer 5 and the second conductive layer 6, and is connected with the formed capacitor through the capacitance measuring instrument 8, and the capacitance of the formed capacitor is measured. Therefore, the first conductive layer 5 and the second conductive layer 6 are arranged to form a capacitor, so that the thickness of each part on the polishing pad 2 can be obtained according to the measured capacitance of the capacitor, and the abnormal condition of the polishing pad 2 in the using process can be visually found.

In one embodiment, the first conductive layer 5 and the polishing platen 1 satisfy the parallel condition, and the second conductive layer 6 and the first conductive layer 5 satisfy the parallel condition.

In the present embodiment, the parallel condition is satisfied by defining the first conductive layer 5 and the second conductive layer 6 so that a parallel capacitor is formed between the first conductive layer 5 and the second conductive layer 6; the first conductive layer 5 and the polishing platen 1 satisfy the parallel condition, which is convenient for accurately measuring the thickness of the polishing pad 2 disposed on the polishing platen 1.

In an embodiment, the polishing apparatus further includes a first control portion, connected to the polishing head 3, for driving the polishing head 3 to move in a first plane. Specifically, the first plane and the polishing platen 1 satisfy a parallel condition.

In the present embodiment, the first control unit (not shown in the figures) includes a first driving element, which may be, but not limited to, an oil cylinder, an air cylinder, a motor, etc. to control the grinding head 3 to move arbitrarily in the first plane according to actual production requirements.

In an embodiment, the polishing apparatus further includes a second control portion, and the second control portion is connected to the polishing head 3 for driving the polishing head 3 to rotate around a rotation center.

In the present embodiment, the second control unit (not shown in the figures) includes a second driving element and a rotating shaft connected to the second driving element, and the second driving element may include, but is not limited to, an oil cylinder, an air cylinder, a motor, etc. according to actual production requirements, so as to control the grinding head 3 to rotate around the rotating shaft, thereby achieving the purpose of sufficient grinding.

In one embodiment, the polishing head 3 includes a main body 31, and a receiving groove 32 is formed at an end of the main body 31 close to the polishing platen 1 for receiving the object 4 to be polished. Further, the outer edge of the main body 31 has an arc-shaped connecting section 35, the second conductive layer 6 is arc-shaped, and the second conductive layer 6 is attached to the arc-shaped connecting section 35 (see fig. 1); the main body 31 is provided with a lead 33, and the second conductive layer 6 is connected with the energizing member 7 through the lead 33.

In this embodiment, the second conductive layer 6 is connected to the energizing member 7 through the lead 33, and the first conductive layer 5 is also connected to the energizing member 7 through the lead 33, so that the polishing pad 2 forms a capacitor between the first conductive layer 5 and the second conductive layer 6, and is connected to the formed capacitor through the capacitance measuring instrument 8, to measure the capacitance of the formed capacitor.

Referring to fig. 3, in an embodiment, the outer edge of the main body 31 has an arc-shaped connecting section 35, the main body 31 extends outward at the position of the arc-shaped connecting section 35 to form a protrusion 34, and the second conductive layer 6 is disposed on a side of the protrusion 34 close to the polishing platform 1.

In the present embodiment, the second conductive layer 6 is in the form of a sheet and is attached to the protruding portion 34, the lead 33 is provided in the main body 31, and the second conductive layer 6 is connected to the energy supply member 7 through the lead 33. Since the second conductive layer 6 is connected to the energizing member 7 through the wire 33 and the first conductive layer 5 is also connected to the energizing member 7 through the wire 33, the polishing pad 2 forms a capacitor between the first conductive layer 5 and the second conductive layer 6, and is connected to the formed capacitor through the capacitance measuring instrument 8 to measure the capacitance of the formed capacitor.

In one embodiment, the first conductive layer 5 is a metal layer or a metal oxide layer; the second conductive layer 6 is a metal layer or a metal oxide layer.

In this embodiment, the materials of the first conductive layer 5 and the second conductive layer 6 are selected in various combinations. When the first conductive layer 5 is a metal layer, the second conductive layer 6 may be configured as the same metal layer or a metal oxide layer; when the first conductive layer 5 is a metal oxide layer, the second conductive layer 6 may be provided as a metal layer, or the same metal oxide layer. The specific selection mode can be determined according to the actual production situation.

In the description of the present disclosure, it is to be understood that the orientation or positional relationship indicated by the orientation terms is generally based on the orientation or positional relationship shown in the drawings, and is for convenience only to facilitate the description of the present disclosure and to simplify the description, and in the case of not having been stated to the contrary, these orientation terms are not intended to indicate and imply that the device or element being referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore should not be taken as limiting the scope of the present disclosure; the terms "inner" and "outer" refer to the interior and exterior relative to the contours of the components themselves.

For ease of description, spatially relative terms such as "over 8230 \ 8230;,"' over 8230;, \8230; upper surface "," above ", etc. may be used herein to describe the spatial relationship of one or more components or features to other components or features as illustrated in the figures. It is to be understood that the spatially relative terms are intended to encompass not only the orientation of the component as depicted in the figures, but also different orientations of the component in use or operation. For example, if an element in the drawings is turned over in its entirety, the articles "over" or "on" other elements or features will include the articles "under" or "beneath" the other elements or features. Thus, the exemplary terms "at 8230; \8230; 'above" may include both orientations "at 8230; \8230;' above 8230; 'at 8230;' below 8230;" above ". Further, these components or features may also be oriented at 0 at various other angles (e.g., rotated 90 degrees or at other angles), all of which are intended to be encompassed herein.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, elements, components, and/or combinations thereof, unless the context clearly indicates otherwise.

It should be noted that the terms "first," "second," and the like in the description and claims of the present disclosure and in the above-described drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the disclosure described herein are intended to be practiced in sequences other than those illustrated or described herein.

The present disclosure has been illustrated by the above-described embodiments, but it should be understood that the above-described embodiments are for purposes of illustration and description only and are not intended to limit the present disclosure to the described embodiments. Furthermore, it will be understood by those skilled in the art that the present disclosure is not limited to the embodiments described above, and that many variations and modifications may be made in light of the teaching of the present disclosure, all of which fall within the scope of the claimed disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof.

Claims (10)

1. A grinding apparatus, comprising:

the polishing device comprises a polishing platform (1), wherein a polishing pad (2) is arranged on the polishing platform (1);

a grinding head (3) which is positioned above the grinding platform (1) and can move relative to the grinding pad (2), and a piece (4) to be ground can be loaded between the grinding head (3) and the grinding platform (1);

a first conductive layer (5), the first conductive layer (5) being arranged between the polishing platform (1) and the polishing pad (2);

a second conductive layer (6), the second conductive layer (6) disposed on the polishing head (3);

an energizing member (7), wherein the energizing member (7) is connected to the first conductive layer (5) and the second conductive layer (6), respectively, so that the first conductive layer (5), the polishing pad (2), and the second conductive layer (6) form a capacitor; and

and the capacitance measuring instrument (8) is connected with the capacitor, and the capacitance measuring instrument (8) can measure the capacitance of the capacitor.

2. The polishing apparatus according to claim 1, wherein the first conductive layer (5) and the polishing platen (1) satisfy a parallel condition, and the second conductive layer (6) and the first conductive layer (5) satisfy a parallel condition.

3. The polishing device according to claim 1, further comprising a first control portion connected to the polishing head (3) for moving the polishing head (3) in a first plane.

4. A grinding device according to claim 3, characterized in that the first plane and the grinding table (1) satisfy a parallel condition.

5. The polishing device according to claim 1, further comprising a second control portion connected to the polishing head (3) for driving the polishing head (3) to rotate around a rotation center.

6. The polishing device according to claim 1, wherein the polishing head (3) comprises a main body (31), and a receiving groove (32) is formed on an end of the main body (31) close to the polishing platen (1) for receiving the member (4) to be polished.

7. The grinding device according to claim 6, characterized in that the outer edge of the main body (31) is provided with an arc-shaped connecting section (35), the second conductive layer (6) is arc-shaped, and the second conductive layer (6) is attached to the arc-shaped connecting section (35); be provided with wire (33) in main part (31), second conducting layer (6) pass through wire (33) with energy piece (7) are connected.

8. A grinding device according to claim 6, characterized in that the outer edge of the main body (31) has an arc-shaped connecting section (35), the main body (31) is extended outwards at the position of the arc-shaped connecting section (35) to form a protrusion (34), and the second conductive layer (6) is arranged on one side of the protrusion (34) close to the grinding table (1).

9. The grinding device according to claim 1, characterized in that the first conductive layer (5) is a metal layer or a metal oxide layer.

10. The abrading device according to claim 1, wherein the second conductive layer (6) is a metal layer or a metal oxide layer.

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