CN218621019U

CN218621019U - Magnetron sputtering target and vacuum coating device

Info

Publication number: CN218621019U
Application number: CN202222463842.3U
Authority: CN
Inventors: 温小兵; 曾小绵; 刘源; 刘霄枫
Original assignee: Guangdong Kibing Energy Saving Glass Co ltd
Current assignee: Guangdong Kibing Energy Saving Glass Co ltd
Priority date: 2022-09-15
Filing date: 2022-09-15
Publication date: 2023-03-14
Anticipated expiration: 2032-09-15

Abstract

The utility model provides a magnetron sputtering target and vacuum coating device, the utility model discloses a set up the magnetic conduction board between target and cooling layer, make perpendicular to target surface magnetic field component become vertical shape by original radiation shape, the concentration that magnetic field vertical component surpassed 400-900 gauss surpasses 90%. Under certain plasma concentration, the cross section width of conventional sputtering is only 30mm, after the scheme is implemented, the cross section width is increased to 50mm during sputtering, and the original V-shaped groove is changed into a U-shaped sputtering groove after sputtering, so that the sputtering amount of the target is greatly increased, and the sputtering efficiency and the utilization rate of the target are improved.

Description

Magnetron sputtering target and vacuum coating device

Technical Field

The utility model relates to a magnetron sputtering coating film technical field, in particular to magnetron sputtering target and vacuum coating device.

Background

The working principle of the coating production line is that under a high background vacuum environment (generally less than 1 x 10-3 pa), a medium-frequency power supply or a direct-current power supply applies a negative voltage of 300-700 volts between a target and a substrate, 1200sccm high-purity argon gas and reaction gas are introduced, high-energy electrons can ionize the argon gas under the environment, the ionized argon gas forms plasma particles, after a strong magnetic field is added, the target surface is accelerated to bombard by the action of Lorentz force of the magnetic field, target atoms bombarded out can be deposited on the glass surface, and a required film layer is formed on the glass surface.

In the planar magnetron sputtering target, the magnetic steel is placed behind the target material, and the magnetic lines of force passing through the surface of the target material form a magnetic field on the surface of the target material. Wherein the magnetic field B parallel to the target surface and the electric field E perpendicular to the target surface form a drift field E x B parallel to the target surface. The drift field E multiplied by B has the function of a trap for electrons, thereby increasing the electron density of the area of the target surface, improving the collision probability of the electrons and argon gas molecules, strengthening the ionization rate of the argon gas and increasing the sputtering rate.

At present, three sets of magnets are arranged in a cathode body of a traditional planar target through magnetic steel to form an annular magnetic field, the magnetic field obviously emits rays to penetrate through the surface of the target along an annular track of the magnetic field, the vertical magnetic field component of the magnetic field at the position of a central axis of the surface of the target is 400-900 Gauss and accounts for about 60%, and then the rays are quickly attenuated towards the edge of the target, so that the target is sputtered out of an annular deep groove after magnetic control coating, and the utilization rate is relatively low.

SUMMERY OF THE UTILITY MODEL

The utility model mainly aims at providing a magnetron sputtering target and vacuum coating device, which aims at solving the problem of relatively low utilization rate of target materials in the prior art.

In order to achieve the purpose, the utility model provides a magnetron sputtering target, which comprises a target material, a magnetic conduction plate, a cooling layer and a magnet layer which are arranged from top to bottom in sequence;

the magnet layer comprises a central magnet and an outer ring magnet arranged around the central magnet, and the polarities of the poles of the central magnet and the poles of the outer ring magnet facing the target material are opposite;

the cooling layer comprises a cooling plate and a cooling water path arranged in the cooling plate.

In one embodiment, the outer ring magnet comprises a plurality of first permanent magnets and the central magnet comprises a plurality of second permanent magnets, the second permanent magnets being arranged side by side, the second permanent magnets being arranged around the central magnet.

In an embodiment, the outer ring magnet and the central magnet are electromagnets, the outer ring magnet includes a first bracket and a first coil wound on the first bracket, and the central magnet includes a second bracket and a second coil wound on the second bracket.

In one embodiment, the magnetic conductive plate is made of carbon steel or silicon steel.

In one embodiment, the cooling plate is a copper plate.

In one embodiment, the magnetron sputtering target further comprises a peripheral bead arranged at the edge of the target material, and an intermediate bead arranged at the center of the target material.

In one embodiment, the target is arranged in a waist shape, the peripheral edge of the target is provided with a step for installing the peripheral trim strip, and the center of the target is provided with an installation groove for installing the middle trim strip.

The utility model also provides a vacuum coating device, including foretell magnetron sputtering target.

The utility model discloses a set up the magnetic conduction board between target and cooling layer, make perpendicular to target surface magnetic field component become vertical shape by original radiation shape, the concentration that magnetic field vertical component surpassed 400-900 gauss surpasses 90%. Under certain plasma concentration, the cross section width of conventional sputtering is only 30mm, after the scheme is implemented, the cross section width is increased to 50mm during sputtering, and the original V-shaped groove is changed into a U-shaped sputtering groove after sputtering, so that the sputtering amount of the target is greatly increased, and the sputtering efficiency and the utilization rate of the target are improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a conventional magnetron sputtering target;

FIG. 2 is a cross-sectional view of a magnetron sputtering target in an embodiment of the present invention;

FIG. 3 is a top view of the magnetron sputtering target of the embodiment of FIG. 2.

The reference numbers illustrate:

reference numerals	Name (R)	Reference numerals	Name (R)
				10	Target material	50	Pressing bar
11	Sputtering channel	51	Middle depression bar
				20	Magnetic conductive plate	52	Peripheral press strip
30	Cooling layer
				40	Magnet layer

The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, back \8230;) in the embodiments of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicator is changed accordingly.

Furthermore, descriptions in the present application as to "first," "second," etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly defined otherwise.

In the present application, unless expressly stated or limited otherwise, the terms "connected" and "fixed" are to be construed broadly, e.g., "fixed" may be fixedly connected or detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be interconnected within two elements or in a relationship where two elements interact with each other unless otherwise specifically limited. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In addition, the technical solutions between the embodiments of the present invention can be combined with each other, but it is necessary to be able to be realized by a person having ordinary skill in the art as a basis, and when the technical solutions are contradictory or cannot be realized, the combination of such technical solutions should be considered to be absent, and is not within the protection scope of the present invention.

The utility model provides a magnetron sputtering target, please refer to fig. 1 to fig. 3, which comprises a target material 10, a magnetic conductive plate 20, a cooling layer 30 and a magnet layer 40, which are arranged in sequence from top to bottom; the magnet layer comprises a central magnet and an outer ring magnet arranged around the central magnet, and the polarities of the poles of the central magnet and the poles of the outer ring magnet facing the target material 10 are opposite; the cooling layer 30 includes a cooling plate and a cooling water path provided in the cooling plate.

In this embodiment, the material of the magnetic conduction plate 20 is carbon steel or silicon steel, and the cooling plate is a copper plate. In this embodiment, the outer ring magnet comprises a plurality of first permanent magnets, the central magnet comprises a plurality of second permanent magnets, the second permanent magnets being arranged side by side, the second permanent magnets being arranged around the central magnet.

In addition, outer lane magnet with central magnet is the electro-magnet, outer lane magnet includes first support and winds and establish first coil on the first support, central magnet includes the second support and winds and establish second coil on the second support.

In this embodiment, one of the center magnet and the peripheral magnet is an electromagnet, and the other is a permanent magnet. Specifically, the central magnet may be configured as a permanent magnet, and the peripheral magnets may be configured as electromagnets. Alternatively, the central magnet may be provided as an electromagnet and the peripheral magnets as permanent magnets.

The utility model discloses a set up magnetic conduction board 20 between target 10 and cooling layer 30, make perpendicular to target 10 surface magnetic field component become vertical shape from original radiation shape, the concentration that the perpendicular component of magnetic field surpassed 400-900 gauss surpasses 90%. Under certain plasma concentration, the cross section width of conventional sputtering is only 30mm, after the scheme is implemented, the cross section width is increased to 50mm during sputtering, and the original V-shaped groove is changed into the U-shaped sputtering groove 11 after sputtering, so that the sputtering amount of the target material 10 is greatly increased, and the sputtering efficiency of the target material 10 and the utilization rate of the target material 10 are improved.

In an embodiment, referring to fig. 1 to 3, the target 10 is disposed in a waist shape, a step for mounting the peripheral bead 52 is disposed on the peripheral edge of the target 10, and a mounting groove for mounting the intermediate bead 51 is disposed in the center of the target 10. In this embodiment, the magnetron sputtering target further includes a peripheral bead 52 disposed on the edge of the target material 10, and an intermediate bead 51 disposed in the center of the target material 10.

The utility model also provides a vacuum coating device, please refer to fig. 1 to 3, the vacuum coating device includes the magnetron sputtering target.

The utility model discloses purpose technological effect: improve the utilization ratio of each set of plane silver target, the weight 221 kg of a pair of new silver target, utility model silver target is heavy 161 kg after the target cycle is traded to the previous one, consumes 60 kg promptly, and utilization ratio 27.1%, utility model silver target after the target cycle is traded to the next one is heavy about 139 kg, consumes 82 kg promptly, and utilization ratio 37.1%. Prolonging the target changing period, installing 2 sets of 35 mm-thick silver targets on the equipment, wherein the accumulated power consumption value of the original single set of silver targets is about 3900 kilowatt-hour, the average consumption of 185 kilowatt-hours per day and the target changing period is 42 days; the accumulated power consumption value of the single set of cathode is about 5200 kilowatt-hour, the average consumption of 173 kilowatt-hours per day, and the target changing period is increased to 60 days. The consumption of the silver target is in proportion to the product of the used power and the time, the accumulated power reaches the design value, the silver target meeting the sputtering condition is consumed, the residual is the residual target, and the residual target needs to be recycled and processed again.

The production cost of the large plate is reduced, the current silver unit price of the market is about 4500 yuan per kilogram, the yield of the large plate is 2.2 ten thousand square meters in one day, the total silver consumption amount in the previous target changing period of the utility model is 60 kilograms 0.52 ten thousand yuan per kilogram =27 ten thousand yuan, the yield of the large plate can be 2.2 ten thousand yuan per day 42 days =92.4 ten thousand square meters, and the unit price is about 0.29 yuan per square meter; the total silver consumption in the next target-changing period of the utility model is 82 kilograms per 0.52 ten thousand yuan =36.9 ten thousand yuan, the yield of the large plate can be 2.2 thousand per day per 60 days =132 ten thousand square meters, and the unit price is about 0.279 yuan per square meter; the large plate is produced by about 1000 ten thousand square meters in a year, and the cost is saved by about 13 ten thousand yuan. The utilization rate of the plane silver target before and after the implementation of the scheme is as follows:

in this embodiment, the fixing beads 50 of the target 10 are composed of three groups, i.e., a left group, a middle group and a right group, of the magnetic conducting plate 20 below the target 10, a copper conducting layer below the magnetic conducting plate 20, an independent cooling water layer of the cathode body, and a plurality of groups of magnetic poles with cathodes arranged behind the copper plate. The conventional cathode is formed by sealing the target material 10 in direct contact with the copper plate, and the scheme is that after the magnetic conduction plate 20 is added, the target material 10 and the magnetic conduction plate 20 are firmly fixed on a cathode body together by the pressing strip 50 through the fastening screw, interference is formed on the magnetic field of the cathode, the magnetic field right above the target material 10 is widened, as shown in fig. 2, the sputtering area of the target material 10 is increased and widened, the etching area of the target material 10 is improved, and therefore the utilization rate of the target material 10 is improved.

The above only be the preferred embodiment of the utility model discloses a not consequently restriction the patent scope of the utility model, all be in the utility model discloses a under the design, utilize the equivalent structure transform of what the content of the description and the attached drawing was done, or direct/indirect application all includes in other relevant technical field the utility model discloses a patent protection is within range.

Claims

1. A magnetron sputtering target is characterized by comprising a target material, a magnetic conduction plate, a cooling layer and a magnet layer which are sequentially arranged from top to bottom;

the magnet layer comprises a central magnet and an outer ring magnet arranged around the central magnet, and the polarities of the magnetic poles of the central magnet and the magnetic poles of the outer ring magnet facing the target material are opposite;

2. The magnetron sputtering target of claim 1 wherein the outer ring magnets comprise a first plurality of permanent magnets and the central magnet comprises a second plurality of permanent magnets, the second permanent magnets being arranged side-by-side and the second permanent magnets being arranged around the central magnet.

3. The magnetron sputtering target of claim 1 wherein the outer ring magnet and the center magnet are electromagnets, the outer ring magnet comprising a first support and a first coil wound on the first support, the center magnet comprising a second support and a second coil wound on the second support.

4. The magnetron sputtering target as claimed in any one of claims 1 to 3, wherein the material of the magnetic conductive plate is carbon steel or silicon steel.

5. The magnetron sputtering target according to any one of claims 1 to 3, wherein the cooling plate is a copper plate.

6. The magnetron sputtering target as claimed in any one of claims 1 to 3, further comprising a peripheral bead disposed on the edge of the target material and an intermediate bead disposed in the center of the target material.

7. The magnetron sputtering target as claimed in claim 6, wherein the target material is waist-shaped, the peripheral edge of the target material is provided with a step for mounting the peripheral bead, and the center of the target material is provided with a mounting groove for mounting the intermediate bead.

8. A vacuum coating apparatus comprising a magnetron sputtering target according to any one of claims 1 to 7.