CN218546879U - NFC field intensity testing device - Google Patents
NFC field intensity testing device Download PDFInfo
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- CN218546879U CN218546879U CN202222905460.1U CN202222905460U CN218546879U CN 218546879 U CN218546879 U CN 218546879U CN 202222905460 U CN202222905460 U CN 202222905460U CN 218546879 U CN218546879 U CN 218546879U
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Abstract
The utility model relates to a NFC field intensity testing arrangement, including the PCB board, test coil locates on the PCB board, and couples with the magnetic field of NFC equipment, obtains induced voltage, and photoelectric module concatenates on test coil, and the electric current is luminous according to the induced voltage value of difference when passing through photoelectric module for detect and quantify NFC equipment field intensity value size. The device of this application simple structure, the simple operation need not to adopt complicated equipment can realize detecting the purpose, the effectual production and use cost that has saved.
Description
Technical Field
The application relates to the field of NFC field intensity test, in particular to an NFC field intensity test device.
Background
NFC (Near Field Communication) is a new technology developed in recent years, and is widely applied to electronic devices such as smart phones, public transportation terminals, and POS machines, and includes functions of mobile payment, door control, anti-counterfeiting, and the like. With the gradual improvement and popularization of the NFC technology, the technology will be gradually applied to more and more usage scenarios.
Because NFC belongs to short distance high frequency wireless communication technology, need frequently to judge whether NFC normally starts in product design and debugging process usually to reach and normally start back non-contact field intensity and have reached requirement etc.. At present, professional and high-precision testing equipment is usually adopted in the market to test NFC products, and specifically comprises a non-contact electrical tester, a network analyzer, an oscilloscope and the like, but the equipment is expensive, high in operation specificity and complex in use steps, a large amount of time and material cost are required to be input in the testing process, and more human resources are wasted.
SUMMERY OF THE UTILITY MODEL
In view of this, the present application provides an NFC field strength testing apparatus to solve the above problems.
According to an aspect of the present application, there is provided an NFC field strength testing apparatus for testing a field strength of an NFC device, including:
a PCB board;
the test coil is arranged on the PCB and coupled with the magnetic field of the NFC equipment to obtain induction voltage;
and the photoelectric module is connected in series with the test coil, and emits light according to different induction voltage values when current passes through the photoelectric module, so that the magnitude of the field intensity value of the NFC equipment is detected and quantified.
As an optional embodiment of the present application, optionally, the optoelectronic module comprises a first optoelectronic module, a second optoelectronic module, and a third optoelectronic module;
the first photoelectric module, the second photoelectric module and the third photoelectric module are connected in parallel and then connected in series on the test coil.
As an optional embodiment of the present application, optionally, the first photovoltaic module includes a resistor R1 and a light emitting diode D1;
the second photovoltaic module comprises a resistor R2 and a light emitting diode D2;
the third photovoltaic module comprises a resistor R3 and a light emitting diode D3;
the resistor R1 is connected with the light emitting diode D1 in series, the resistor R2 is connected with the light emitting diode D2 in series, and the resistor R3 is connected with the light emitting diode D3 in series.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R1 is 22R;
the light emitting diode D1 is red in light emitting color, the forward rated voltage is 2V, and the forward rated current is 5mA;
when the field strength of the NFC device is induced to be larger than 2.11V, the light emitting diode D1 emits red light.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R2 is 33R;
the light emitting diode D1 is blue in light emitting color, the forward rated voltage is 2.8V, and the forward rated current is 5mA;
when the field strength of the NFC device is induced to be larger than 2.965V, the light emitting diode D2 emits blue light, and the light emitting diode D1 emits red light at the same time.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R3 is 33R;
the light emitting diode D3 is green, the forward rated voltage of the light emitting diode D3 is 3.3V, and the forward rated current of the light emitting diode D3 is 20mA;
when the field strength of the NFC device is induced to be greater than 3.96V, the light emitting diode D3 emits green light, and at this time, the light emitting diode D1 and the light emitting diode D2 emit red light and blue light, respectively.
As an optional embodiment of the present application, optionally, the PCB board is a double layer, and the length of the double layer PCB board is 65mm, and the width of the double layer PCB board is 65mm.
As an optional embodiment of the present application, optionally, the number of the test coils is two, and the test coils are circumferentially arranged on the PCB in parallel;
two ends of one of the test coils are respectively electrically connected with the photoelectric module and are arranged in a crossed manner with the other test coil, and the crossed position is positioned on one side of the photoelectric module.
As an alternative embodiment of the present application, optionally, the test coil has a line width of 32mil;
the line spacing of the two test coils was 32 mils.
The beneficial effect of this application:
based on the implementation of this application, this application adopts the mode that PCB board and test coil and photovoltaic module mutually supported, detects NFC equipment, need not to adopt equipment such as expensive complicated non-electric connection ware tester, network analyzer and oscilloscope can realize the detection field intensity purpose. Specifically, arrange the NFC field intensity testing arrangement of this application in NFC equipment one side, detect whether NFC equipment has normally produced the size of field intensity and quantization NFC field intensity value through the photovoltaic module of this application. When NFC equipment begins to work, the test coil of this application couples with the magnetic field of NFC equipment, obtains induced voltage, and the photoelectric module connects in series and begins work on the test coil to send the light of different grade type according to the induced voltage value of difference, realize from this that the purpose of detection and quantization NFC equipment field intensity value size. The device of this application simple structure, the simple operation, effectual production and use cost of saving.
Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features, and aspects of the application and, together with the description, serve to explain the principles of the application.
Fig. 1 shows a schematic circuit diagram of an NFC field strength test apparatus according to an embodiment of the present application;
fig. 2 shows a schematic structural diagram of an NFC field strength testing apparatus according to an embodiment of the present application;
FIG. 3 shows a schematic diagram of a test coil configuration of an embodiment of the present application;
fig. 4 shows a schematic structural diagram of detecting an NFC device by an NFC field strength testing apparatus according to an embodiment of the present application;
fig. 5 shows a schematic circuit diagram of the NFC field strength test apparatus according to the embodiment of the present application for detecting an NFC device.
Detailed Description
Various exemplary embodiments, features and aspects of the present application will be described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers can indicate functionally identical or similar elements. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
It is to be understood, however, that the terms "central," "longitudinal," "lateral," "length," "width," "up," "down," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing or simplifying the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be considered limiting of the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present application. It will be understood by those skilled in the art that the present application may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present application.
As shown in fig. 1 and fig. 2, the NFC field strength testing apparatus is used for testing the field strength of an NFC device, and includes:
a PCB board 100;
the test coil 200 is arranged on the PCB 100 and coupled with the magnetic field of the NFC equipment to obtain an induction voltage;
the photoelectric module 300 is connected in series to the test coil 200, and when current passes through the photoelectric module 300, the current emits light according to different induced voltage values, so that the magnitude of the field intensity value of the NFC equipment can be detected and quantified.
In this embodiment, the NFC device is detected by using the PCB 100, the test coil 200 and the optoelectronic module 300 in cooperation with each other, and the field strength can be detected without using expensive and complicated non-electric device tester, network analyzer, oscilloscope and other devices. Specifically, arrange the NFC field intensity testing arrangement of this application in NFC equipment one side, detect whether NFC equipment has normally produced field intensity through the photovoltaic module 300 of this application to and quantify the size of NFC field intensity value according to the colour of the different emitting diode that set up in the photovoltaic module 300. When the NFC device starts to operate, the test coil 200 of the present application is coupled with a magnetic field of the NFC device to obtain an induced voltage, where it is to be noted that, generally, a card reading distance of the NFC device does not exceed 5cm, and in this range, an electric field portion in an electromagnetic wave can be ignored, only magnetic field coupling is considered, and during an operation of the NFC device, a generated magnetic field is distributed in a surrounding space, and the NFC field strength test apparatus of the present application can obtain energy of a certain intensity through coupling in a specific direction within the distance, and a specific detection schematic diagram and an equivalent circuit diagram are shown in fig. 4 and 5, the NFC device couples the generated magnetic field with the test coil 200 of the NFC field strength test apparatus through an antenna thereof to generate an induced current I2, which flows through the optoelectronic module 300 connected in series to the test coil 200, so that the optoelectronic module 300 starts to operate, and different types of light are emitted according to different induced voltage values generated by the detected NFC device, thereby achieving the purpose of detecting and quantifying the field strength value of the NFC device. The device of this application simple structure, the simple operation, effectual production and use cost of saving.
As an optional embodiment of the present application, optionally, the optoelectronic module 300 includes a first optoelectronic module 310, a second optoelectronic module 320, and a third optoelectronic module 330;
the first, second and third photovoltaic modules 310, 320 and 330 are connected in parallel and then connected in series to the test coil 200.
In this embodiment, the first photovoltaic module 310, the second photovoltaic module 320, and the third photovoltaic module 330 are connected in parallel, and by setting different photovoltaic modules, the magnitude of the NFC field intensity can be further quantified on the basis of whether the induction NFC device generates the field intensity, specifically, the magnitude of the field intensity of the NFC device generating the induction voltage is determined according to whether different light emitting diodes correspondingly arranged in different photovoltaic modules are turned on, so as to meet various detection requirements.
As an optional embodiment of the present application, optionally, the first photovoltaic module 310 includes a resistor R1 and a light emitting diode D1;
the second photovoltaic module 320 includes a resistor R2 and a light emitting diode D2;
the third photovoltaic module 330 includes a resistor R3 and a light emitting diode D3;
the resistor R1 is connected with the light emitting diode D1 in series, the resistor R2 is connected with the light emitting diode D2 in series, and the resistor R3 is connected with the light emitting diode D3 in series.
In this embodiment, the different optoelectronic modules each include a resistor and a light emitting diode, wherein the resistor R1 is connected in series with the light emitting diode D1, the resistor R2 is connected in series with the light emitting diode D2, and the resistor R3 is connected in series with the light emitting diode D3. It should be noted that the colors of the light emitting diodes are different, and when the detected NFC field strengths are different, the induced voltages obtained by the test coil 200 are also different, so that the corresponding light emitting diodes are turned on, and the purpose of quantifying the field strength of the NFC device is achieved.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R1 is 22R;
the light emitting diode D1 is red in light emitting color, the forward rated voltage is 2V, and the forward rated current is 5mA;
the light emitting diode D1 emits red light when the field strength of the inductive NFC device is larger than 2.11V.
In this embodiment, the forward rated voltage of the light emitting diode D1 is 2V, the forward rated current is 5mA, and the resistance of the resistor R1 is 22R, so that the operating voltage of the first photovoltaic module 310 is U =22 × 5.001 ++ 2=2.11v, and therefore, when the field intensity of the NFC device is greater than 2.11V, the light emitting diode D1 is turned on in red, and the purpose of detecting the field intensity of the NFC device is achieved.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R2 is 33R;
the light emitting diode D1 is blue in light emitting color, the forward rated voltage is 2.8V, and the forward rated current is 5mA;
when the field strength of the inductive NFC device is larger than 2.965V, the light emitting diode D2 emits blue light and the light emitting diode D1 emits red light at the same time.
In this embodiment, the forward rated voltage of the light emitting diode D2 is 2.8V, the forward rated current is 5mA, and the resistance of the resistor R2 is 33R, so that the operating voltage of the second photovoltaic module 320 is U =33 × 5 + 0.001+2.8=2.965v, and thus when the field strength of the NFC device is greater than 2.965V, the light emitting diode D1 and the light emitting diode D2 are both turned on, and emit red light and blue light, respectively, and the purpose of detecting the field strength of the NFC device is achieved.
As an optional embodiment of the present application, optionally, the resistance value of the resistor R3 is 33R;
the light emitting diode D3 is green in light emitting color, the forward rated voltage of the light emitting diode D3 is 3.3V, and the forward rated current of the light emitting diode D3 is 20mA;
when the field strength of the inductive NFC device is greater than 3.96V, the light emitting diode D3 emits green light, and the light emitting diode D1 and the light emitting diode D2 emit red light and blue light, respectively.
In this embodiment, the forward rated voltage of the light emitting diode D3 is 3.3V, the forward rated current is 20mA, and the resistance of the resistor R3 is 33R, so that the operating voltage of the third photovoltaic module 330 is U =33 × 20 × 0.001+3.3=3.96v, so that when the field strength of the NFC device is greater than 3.96V, the light emitting diode D1, the light emitting diode D2, and the light emitting diode D3 are simultaneously lit, and correspondingly emit red light, blue light, and green light, respectively, that is, when the NFC field strength test device of the present application detects that the NFC field strength values are different, the corresponding light emitting diodes operate, and according to the lighting condition of the light emitting diodes, the specific field strength value is determined, and meanwhile, the device is simple in structure, convenient to operate, and effective in cost saving.
As an optional embodiment of the present application, optionally, the PCB board 100 is a double-layer, and the length of the double-layer PCB board 100 is 65mm and the width is 65mm.
As shown in fig. 3, as an alternative embodiment of the present application, optionally, the number of the test coils 200 is two, and the test coils are circumferentially arranged on the PCB board 100 in parallel;
two ends of one of the test coils 200 are respectively electrically connected with the optoelectronic module and are arranged in a crossed manner with the other test coil 200, and the crossed position is positioned on one side of the optoelectronic module.
As an alternative embodiment of the present application, optionally, the test coil 200 has a line width of 32 mils;
the line spacing of the two test coils 200 was 32 mils.
In conclusion, when testing and debugging of the NFC equipment, the NFC field intensity testing device can effectively save cost, and the detection purpose can be realized without expensive and complex instruments. When NFC equipment begins to work, the test coil 200 of the application is coupled with the magnetic field of the NFC equipment to obtain induced voltage, the photoelectric module is connected in series on the test coil 200 to begin to work, and different types of light are emitted according to different induced voltage values, so that the purpose of detecting and quantifying the field intensity value of the NFC equipment is achieved.
The foregoing description of the embodiments of the present application has been presented for purposes of illustration and description and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen in order to best explain the principles of the embodiments, the practical application, or improvements to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (9)
1. An NFC field strength testing device is used for testing the field strength of an NFC device and is characterized by comprising:
a PCB board;
the test coil is arranged on the PCB and coupled with the magnetic field of the NFC equipment to obtain induction voltage;
and the photoelectric module is connected in series with the test coil, and emits light according to different induction voltage values when current passes through the photoelectric module, so that the magnitude of the field intensity value of the NFC equipment is detected and quantified.
2. The NFC field strength test device of claim 1, wherein the optoelectronic modules include a first optoelectronic module, a second optoelectronic module, and a third optoelectronic module;
the first photoelectric module, the second photoelectric module and the third photoelectric module are connected in parallel and then connected in series on the test coil.
3. The NFC field strength test device of claim 2, wherein the first photovoltaic module includes a resistor R1 and a light emitting diode D1;
the second photovoltaic module comprises a resistor R2 and a light emitting diode D2;
the third photovoltaic module comprises a resistor R3 and a light emitting diode D3;
the resistor R1 is connected with the light emitting diode D1 in series, the resistor R2 is connected with the light emitting diode D2 in series, and the resistor R3 is connected with the light emitting diode D3 in series.
4. The NFC field strength test device of claim 3, wherein the resistor R1 has a resistance of 22R;
the light emitting diode D1 is red in light emitting color, the forward rated voltage is 2V, and the forward rated current is 5mA;
when the field strength of the NFC device is induced to be larger than 2.11V, the light emitting diode D1 emits red light.
5. The NFC field strength test device of claim 4, wherein the resistor R2 has a resistance of 33R;
the light emitting diode D1 is blue in light emitting color, the forward rated voltage is 2.8V, and the forward rated current is 5mA;
when the field strength of the NFC device is induced to be larger than 2.965V, the light emitting diode D2 emits blue light, and the light emitting diode D1 emits red light at the same time.
6. The NFC field strength test device of claim 5, wherein the resistor R3 has a resistance of 33R;
the light emitting diode D3 is green in light emitting color, the forward rated voltage of the light emitting diode D3 is 3.3V, and the forward rated current of the light emitting diode D3 is 20mA;
when the field strength for inducing the NFC device is greater than 3.96V, the light emitting diode D3 emits green light, and at this time, the light emitting diode D1 and the light emitting diode D2 emit red light and blue light, respectively.
7. The NFC field strength test device of claim 1, wherein the PCB board is double-layered, and the double-layered PCB board has a length of 65mm and a width of 65mm.
8. The NFC field strength test device of claim 1, wherein the number of the test coils is two, and the test coils are circumferentially arranged on the PCB in parallel;
two ends of one of the test coils are respectively electrically connected with the photoelectric module and are arranged in a crossed manner with the other test coil, and the crossed position is positioned on one side of the photoelectric module.
9. The NFC field strength test device of claim 7, wherein the test coil has a linewidth of 32 mils;
the line spacing of the two test coils was 32 mils.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222905460.1U CN218546879U (en) | 2022-11-01 | 2022-11-01 | NFC field intensity testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222905460.1U CN218546879U (en) | 2022-11-01 | 2022-11-01 | NFC field intensity testing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218546879U true CN218546879U (en) | 2023-02-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222905460.1U Active CN218546879U (en) | 2022-11-01 | 2022-11-01 | NFC field intensity testing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218546879U (en) |
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- 2022-11-01 CN CN202222905460.1U patent/CN218546879U/en active Active
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