CN218514285U

CN218514285U - Circuit and chip for improving efficiency of booster circuit

Info

Publication number: CN218514285U
Application number: CN202222869923.3U
Authority: CN
Inventors: 卢山
Original assignee: Fuman Microelectronics Group Co ltd
Current assignee: Fuman Microelectronics Group Co ltd
Priority date: 2022-10-27
Filing date: 2022-10-27
Publication date: 2023-02-21
Anticipated expiration: 2032-10-27

Abstract

The application relates to the field of control circuits, in particular to a circuit and a chip for improving the efficiency of a booster circuit, which are applied to the booster circuit comprising a booster switch; the power supply end is connected with the input end of the booster circuit; the driving module is connected with the grid electrode of the boost switch and the output end of the boost circuit, and is used for providing driving voltage for the boost switch through the voltage of the output end of the boost circuit, and the driving voltage is greater than the voltage of the power supply end. This application has the on-resistance who reduces the MOS pipe, reduces and switches on the loss, improves controller efficiency, need not to design extra circuit simultaneously and provides higher drive voltage for the MOS pipe specially to improve the effect of boost circuit's efficiency.

Description

Circuit and chip for improving efficiency of booster circuit

Technical Field

The present application relates to the field of control circuits, and in particular, to a circuit and a chip for improving efficiency of a boost circuit.

Background

At present, a power switch tube is generally required to be driven to realize boosting in a switch type booster circuit, a power switch tube is generally arranged in an existing booster circuit, the power switch tube has conduction impedance, certain conduction loss can be generated when the circuit runs, and the conduction loss and the conduction impedance are in positive correlation, so that the efficiency of the booster circuit is easily reduced while the stability of the running of the power switch tube is influenced, and the improvement is needed.

SUMMERY OF THE UTILITY MODEL

The application provides a circuit and chip for improving boost circuit efficiency for reduce power switch tube's on-resistance, reduce the conduction loss, improve controller efficiency, reduce the chip temperature, need not to design extra circuit simultaneously and provide higher driving voltage for power switch tube specially, thereby improve boost circuit's efficiency.

In a first aspect, the present application provides a circuit for improving efficiency of a boost circuit, which adopts the following technical scheme:

a circuit for improving the efficiency of a boost circuit, the boost circuit including a boost switch, comprising: the power supply end is connected with the input end of the booster circuit; the driving module is connected with the grid electrode of the boost switch and the output end of the boost circuit, and is used for providing driving voltage for the boost switch through the voltage of the output end of the boost circuit, and the driving voltage is greater than the voltage of the power supply end.

Optionally, the method further includes: and the control module is connected with the controlled end of the driving module and sends a conducting signal to the driving module so that the driving module provides the output end voltage of the booster circuit to the grid electrode of the booster switch.

Optionally, the method further includes: the clamping circuit is connected between the output end of the boosting circuit and the driving module and is used for limiting the voltage provided to the driving module to be below a preset threshold voltage so as to enable the driving voltage of the boosting switch to be below the preset threshold voltage.

Optionally, the preset threshold voltage is less than or equal to a gate breakdown voltage of the boost switch.

Optionally, the Boost circuit includes any one or more of a Boost circuit, a Buck-Boost circuit, a Sepic circuit, a Cuk circuit, a Zeta circuit, and a Charge-pump.

Optionally, the boost circuit further includes an inductor, a switching unit, and an energy storage unit; the first end of the inductor is connected with the power supply end, the second end of the inductor is connected with the first end of the switch unit and the first end of the boost switch respectively, the second end of the switch unit is connected with the first end of the energy storage unit together to form the output end of the boost circuit, and the second end of the boost switch and the second end of the energy storage unit are connected with the reference ground end respectively.

Optionally, the switching unit includes at least one of a diode and a MOS transistor.

Optionally, the boost switch includes an NMOS tube, the first end of the boost switch is the drain end of the NMOS tube, and the second end of the boost switch is the source end of the NMOS tube.

Optionally, the power supply terminal, the inductor, the boost switch, and the reference ground terminal form a first path, and the power supply terminal, the inductor, the switch unit, the energy storage unit, and the reference ground terminal form a second path; in the first path or the second path, the voltage at the output end of the boost circuit is greater than the voltage at the input end of the boost circuit.

In a second aspect, the present application provides a chip for improving efficiency of a boost circuit, which adopts the following technical scheme:

a chip for improving the efficiency of a boost circuit comprises the circuit for improving the efficiency of the boost circuit as described in the first aspect.

Through adopting above-mentioned technical scheme, provide the power for boost circuit through the feeder ear, boost circuit output voltage is greater than input voltage when normally working, drive module passes through boost circuit's output voltage and provides drive voltage for boost switch, make drive voltage be greater than the power supply terminal voltage, the output voltage who utilizes boost circuit provides higher drive voltage for boost switch, the on-resistance that can effectual reduction boost switch, reduce the conduction loss, improve controller efficiency, do not need extra design circuit to provide higher drive voltage for boost switch specially, thereby improve boost circuit's efficiency.

Drawings

FIG. 1 is a circuit block diagram of an embodiment of the present application;

fig. 2 is another circuit configuration diagram according to the embodiment of the present application.

Description of the reference numerals:

1. a boost switch; 2. a boost circuit; 3. a power supply terminal; 4. a drive module; 5. a control module; 6. a clamping circuit.

Detailed Description

Embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.

"coupled" in the context of this disclosure includes both direct and indirect connections, such as connections made through some active device, passive device, or electrically conductive medium; but also may include connections through other active or passive devices, such as through switches, follower circuits, etc., that are known to those skilled in the art for achieving the same or similar functional objectives.

It is to be noted that unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the present invention belongs.

The present application provides an embodiment 1, and this embodiment 1 discloses a circuit for improving the efficiency of a booster circuit.

Referring to fig. 1, in this embodiment, the circuit for improving the efficiency of the boost circuit is applied to a boost circuit 2 including a boost switch 1, and includes a power supply terminal 3 and a driving module 4, where the power supply terminal 3 is connected to an input terminal of the boost circuit 2, the driving module 4 is connected to a gate of the boost switch 1 and an output terminal of the boost circuit 2, and the driving module 4 is configured to provide a driving voltage for the boost switch 1 through an output terminal voltage of the boost circuit 2, where the driving voltage is greater than a voltage of the power supply terminal 3.

In the present embodiment, since the conduction loss of the boost switch 1 has a positive correlation with the conduction impedance, and the conduction impedance of the boost switch 1 has an inverse correlation with the gate-source voltage thereof, in a section where the gate-source voltage of the boost switch 1 is greater than the threshold voltage Vgs (th), the drain-to-source conduction impedance of the boost switch 1 decreases as the gate-source voltage increases; provide the power for boost circuit 2 through supply terminal 3, boost circuit 2 normal during operation output voltage is greater than input voltage, drive module 4 provides driving voltage for boost switch 1 through boost circuit 2's output voltage, make driving voltage be greater than 3 voltages of supply terminal, utilize boost circuit 2's output voltage to provide higher driving voltage for boost switch 1, can effectual reduction boost switch 1's on-resistance, reduce the conduction loss, improve controller efficiency, need not additionally to design the circuit and provide higher driving voltage for boost switch 1 specially, thereby improve boost circuit's efficiency.

Referring to fig. 1, the circuit for improving the efficiency of the boost circuit may further include a control module 5, the control module 5 is connected to a controlled terminal of the driving module 4, the control module 5 sends a conducting signal to the moving module, and the driving module 4 provides an output terminal voltage of the boost circuit 2 to the gate of the boost switch 1. In this embodiment, the control module 5 sends a control signal to the driving module 4, so that the driving module 4 can drive the boost switch 1 to turn on and off, thereby implementing accurate control of the boost switch 1.

In some examples, the boost circuit 2 may further include an inductor L, a switching unit, and an energy storage unit. The first end of inductance L is connected with supply end 3, and the second end of inductance L is connected respectively with the first end of switch element, boost switch 1's first end, and the second end of switch element connects the output that forms boost circuit 2 with the first end of energy storage unit altogether, and boost switch 1's second end, the second end of energy storage unit are connected with reference ground end respectively.

In some examples, the switching unit may include at least one of a diode D and a MOS transistor, and the switching unit may be configured as the diode D or the MOS transistor due to unidirectional conductivity of the switching unit; the type of the diode D and the MOS transistor is not particularly limited.

When boost switch 1 switches on, the feeder ear 3 charges inductance L, and the increase of electric current in the return circuit, when boost switch 1 cuts off, is the energy storage unit power supply simultaneously to output voltage simultaneously through feeder ear 3 and inductance L, therefore the voltage of output can rise to press the effect, because the existence of switch element, can avoid energy storage unit reverse power supply, causes the influence to the circuit.

Referring to fig. 1, the boost switch 1 may include an NMOS transistor, a first end of the boost switch 1 is a drain end of the NMOS transistor, and a second end of the boost switch 1 is a source end of the NMOS transistor, and the NMOS switch may be used to reduce electric quantity consumed by the circuit; the power supply end 3, the inductor L, the boost switch 1 and the reference ground end form a first path, and the power supply end 3, the inductor L, the switch unit, the energy storage unit and the reference ground end form a second path; the first path or the second path, the voltage of the output terminal of the booster circuit 2 is greater than the voltage of the input terminal of the booster circuit 2.

In some examples, the energy storage unit adopts a capacitor C, when the boost switch 1 is turned on, the power supply terminal 3, the inductor L, the boost switch 1 and the reference ground terminal form a first path, at this time, the output voltage of the boost circuit 2 is equal to the voltage of the capacitor C, and the energy stored in the capacitor C maintains the output voltage of the boost circuit; when the boost switch 1 is turned off, the power supply terminal 3, the inductor L, the switching unit, the energy storage unit, and the reference ground terminal form a second path, and at this time, the output voltage of the boost circuit 2 is equal to the sum of the induced voltage on the inductor L and the voltage provided by the power supply terminal 3.

Generally, the first path and the second path may be alternated, and the voltage of the energy storage unit may be substantially maintained stable when the first path and the second path are stably alternated.

It should be noted that, in the drawings of the specification, only the Boost circuit 2 is taken as an example, the Boost circuit of the present embodiment may further include any one or more of a Boost circuit, a Buck-Boost circuit, a Sepic circuit, a Cuk circuit, a Zeta circuit, and a Charge-pump circuit; the choice of the type of circuit should be configured in accordance with the actual requirements.

In this embodiment, a power supply terminal 3 provides a power supply for the voltage boost circuit 2, the output voltage of the voltage boost circuit 2 is greater than the input voltage when the voltage boost circuit 2 works normally, the voltage boost circuit 2 forms a simple voltage boost circuit through the energy storage capacity of the inductor L and the unidirectional conductivity of the diode D or the MOS transistor, and the energy stored by the capacitor C can maintain the output voltage of the voltage boost circuit 2 when the voltage boost switch 1 is turned off through the characteristic that the capacitor C stores charges, so that the steady balance of the system is maintained; the drive module 4 provides drive voltage for the NMOS switch through the output voltage of the boost circuit 2, so that the drive voltage is greater than the voltage of the power supply terminal 3, if the gate-source voltage of the NMOS switch is greater than the voltage interval of the threshold voltage Vgs (th), the on-resistance from the drain to the source of the NMOS switch decreases along with the increase of the gate-source voltage, therefore, the output voltage of the boost circuit 2 is used to provide drive voltage for the NMOS switch, the on-resistance of the NMOS switch can be effectively reduced, no extra circuit is required to be designed, and higher drive voltage is specially provided for the NMOS switch, so that the efficiency of the boost circuit is improved.

Referring to fig. 2, the circuit for improving the efficiency of the booster circuit may further include: and the clamping circuit 6 is connected between the output end of the booster circuit 2 and the driving module 4, and the clamping circuit 6 is used for limiting the voltage supplied to the driving module 4 to be below a preset threshold voltage so that the driving voltage of the booster switch 1 is below the preset threshold voltage, and the preset threshold voltage is less than or equal to the gate breakdown voltage of the booster switch 1.

In this embodiment, the circuit for improving the efficiency of the boost circuit drives the gate voltage of the boost switch 1 to be always smaller than the preset threshold voltage through the clamp circuit 6, the output voltage of the boost circuit 2 is higher than the gate breakdown voltage of the boost switch 1, and an input voltage higher than the power supply terminal 3 but smaller than the gate breakdown voltage of the boost switch 1 can be obtained through the clamp circuit 6 to supply power to the driving module 4.

In some examples, the clamp circuit 6 may include a combination of devices, circuits having a clamping function.

In this embodiment, by connecting the clamp circuit 6 between the output end of the boost circuit 2 and the drive module 4, it is possible to prevent the output end voltage of the boost circuit 2 from being too high, the gate voltage of the boost switch 1 is higher than the breakdown voltage, and the situation that the boost switch 1 is damaged occurs, and by setting the clamp circuit 6, the gate drive voltage of the NMOS switch is always smaller than the preset threshold voltage, but higher than the input voltage, to provide the drive voltage for the NMOS switch, thereby improving the situation that the NMOS switch generates heat under high voltage, and reducing the power consumption of the NMOS switch.

This application still provides this embodiment 2, still discloses a chip that improves boost circuit efficiency.

A chip for improving the efficiency of a booster circuit comprises the circuit for improving the efficiency of the booster circuit of the embodiment, and the circuit for improving the efficiency of the booster circuit comprises a booster switch 1, a booster circuit 2, a power supply terminal 3, a driving module 4, a control module 5 and a clamping circuit 6, so that the efficiency of the booster circuit is improved.

The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: equivalent changes in structure, shape and principle of the present application shall be covered by the protection scope of the present application.

Claims

1. A circuit for improving the efficiency of a boost circuit, applied to a boost circuit (2) including a boost switch (1), comprising:

a power supply terminal (3) connected to an input terminal of the booster circuit (2);

the driving module (4) is connected with the grid of the boost switch (1) and the output end of the boost circuit (2), the driving module (4) is used for providing driving voltage for the boost switch (1) through the output end voltage of the boost circuit (2), and the driving voltage is greater than the voltage of the power supply end (3).

2. The circuit of claim 1, further comprising:

and the control module (5) is connected with the controlled end of the driving module (4), and the control module (5) sends a conducting signal to the driving module (4) so that the driving module (4) provides the output end voltage of the booster circuit (2) for the grid electrode of the booster switch (1).

3. The circuit of claim 1, further comprising:

a clamping circuit (6) connected between the output of the boost circuit (2) and the drive module (4), the clamping circuit (6) being configured to limit the voltage provided to the drive module (4) below a preset threshold voltage such that the drive voltage of the boost switch (1) is below the preset threshold voltage.

4. A circuit for improving the efficiency of a boost circuit according to claim 3, characterised in that said preset threshold voltage is less than or equal to the gate breakdown voltage of said boost switch (1).

5. A circuit for improving the efficiency of a Boost circuit according to any of claims 1 to 4, characterized in that the Boost circuit (2) comprises any one or several of Boost, buck-Boost circuit, sepic circuit, cuk circuit, zeta circuit, charge-pump.

6. The circuit for improving the efficiency of the boost circuit according to claim 1, wherein the boost circuit (2) further comprises an inductor, a switching unit, an energy storage unit; the first end of inductance with supply end (3) are connected, the second end of inductance with the first end of switch element, boost switch (1) first end is connected respectively, the second end of switch element with the first end of energy storage unit connects jointly and forms the output of boost circuit (2), the second end of boost switch (1) the second end of energy storage unit is held with referring to the ground and is connected respectively.

7. The circuit of claim 6, wherein the switching unit comprises at least one of a diode and a MOS transistor.

8. The circuit for improving the efficiency of a boost circuit according to claim 6, wherein said boost switch (1) comprises an NMOS transistor, the first terminal of said boost switch (1) is the drain terminal of said NMOS transistor, and the second terminal of said boost switch (1) is the source terminal of said NMOS transistor.

9. The circuit for improving the efficiency of a boost circuit according to claim 6, wherein the power supply terminal (3), the inductor, the boost switch (1) and the reference ground terminal form a first path, and the power supply terminal (3), the inductor, the switching unit, the energy storage unit and the reference ground terminal form a second path; in the first path or the second path, the voltage of the output end of the booster circuit (2) is greater than the voltage of the input end of the booster circuit (2).

10. A chip for improving the efficiency of a boost circuit, comprising the circuit for improving the efficiency of a boost circuit according to any one of claims 1 to 9.