CN218497803U

CN218497803U - High and low temperature resistant micro-signal multi-core low-noise cable

Info

Publication number: CN218497803U
Application number: CN202221915806.XU
Authority: CN
Inventors: 靳志杰; 刘述权; 张亚闪; 吕英
Original assignee: Kunshan Spectrum Electronic Technology Co ltd
Current assignee: Kunshan Spectrum Electronic Technology Co ltd
Priority date: 2022-07-22
Filing date: 2022-07-22
Publication date: 2023-02-17
Anticipated expiration: 2032-07-22

Abstract

The utility model relates to a high low temperature resistant small signal multicore low noise cable, including the wire subassembly, the outer packing of wire subassembly has the shielding layer, the shielding layer is provided with the outer jacket outward, the wire subassembly includes a plurality of wire rod bodies, it has semi-conductive inner sheath to fill between the wire rod body, still be provided with the packing rope between the wire rod body, the wire rod body is including the cable core that a plurality of copper wire strands were twisted and is constituted, the cable core wraps up outward has insulating semi-conductive layer, it has the insulating layer to fill between cable core and the insulating semi-conductive layer, the line diameter of copper silk thread is 0.05mm to 0.50mm, the cable core external diameter is not more than 5mm, the copper silk thread is nickel-plated copper silk thread; or the copper wire is a silver-plated copper wire; alternatively, the copper wire is a tin-plated copper wire. Therefore, the whole structure is compact, and the self mechanical noise value is extremely low and is not more than 1mV. Can reform transform the structure of current cable, it is minimum to the external diameter influence after finishing reforming transform, and the wall thickness of insulating semi-conductive layer is no longer than 0.1mm.

Description

High and low temperature resistant micro-signal multi-core low-noise cable

Technical Field

The utility model relates to a multicore low noise cable especially relates to a small signal multicore low noise cable of resistant high low temperature formula.

Background

The current implementation of high fidelity or low noise cables is primarily to add a semiconducting layer to homogenize the electric field. During the implementation, a solvent coating method of graphite, a winding method of a semiconductive tape, and an extrusion coating method of a semiconductive layer are mainly used. Such a configuration has the following drawbacks:

1. and the adhesion with the insulating material is not good.

2. The semiconductive layer does not have sufficient strength and flexibility when mixed with an adhesive or an ink material, and is very likely to fall off when vibrated or collided.

3. The production efficiency is low, and the wrapping efficiency is very slow.

4. Large tolerance fluctuation is easy to occur in the lapping process, and the consistency of the cable is difficult to control.

5. Noise control crossover.

6. The wall thickness of the insulating material is too thick.

Therefore, it is difficult to satisfy the requirements for use in a high-temperature and low-temperature environment in which a small signal is transmitted.

In view of the above-mentioned drawbacks, the present designer is actively making research and innovation to create a high and low temperature resistant micro-signal multi-core low-noise cable, which has industrial application value.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model aims at providing a small signal multicore low noise cable of resistant high low temperature formula.

The utility model discloses a small signal multicore low noise cable of resistant high low temperature formula, including the wire assembly, wherein: the wire assembly is filled with a shielding layer, an outer protection layer is arranged outside the shielding layer, the wire assembly comprises a plurality of wire bodies, a semiconductive inner protection layer is filled between the wire bodies, a filling rope is further arranged between the wire bodies, each wire body comprises a cable core formed by twisting a plurality of copper wires, an insulating semiconductive layer is wrapped outside each cable core, an insulating layer is filled between each cable core and the corresponding insulating semiconductive layer, the diameter of each copper wire is 0.05-0.50 mm, the outer diameter of each cable core is not more than 5mm, and each copper wire is a nickel-plated copper wire; or, the copper wire is a silver-plated copper wire; or, the copper wire is a tin-plated copper wire.

Further, in the high and low temperature resistant micro-signal multi-core low-noise cable, the shielding layer is a copper wire braid layer, the wire diameter of the copper wire is 0.05mm to 0.3mm, the braiding density is not less than 95%, and the copper wire is a nickel-plated copper wire; or the copper wire is a silver-plated copper wire; or the copper wire is a tinned copper wire.

Furthermore, in the high and low temperature resistant micro-signal multi-core low-noise cable, the outer protective layer is an ethylene-polytetrafluoroethylene copolymer layer; or a polyvinylidene fluoride propylene layer; or a layer of fluorinated ethylene propylene; or a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

Furthermore, the high and low temperature resistant micro-signal multi-core low-noise cable is characterized in that the semiconductive inner sheath layer is an ethylene-polytetrafluoroethylene copolymer layer; or the semiconductive inner protection layer is a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

Furthermore, in the high and low temperature resistant micro-signal multi-core low-noise cable, the filling rope is made of a column-shaped fluoroplastic resin.

Furthermore, in the high and low temperature resistant micro-signal multi-core low-noise cable, the insulating semi-conducting layer is a fluorinated ethylene propylene layer; or the insulating semi-conducting layer is an ethylene-polytetrafluoroethylene copolymer layer; or the insulating semi-conducting layer is a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

Still further, in the high and low temperature resistant micro-signal multi-core low-noise cable, the insulating layer is a fluorinated ethylene propylene layer; or, the insulating layer is an ethylene-polytetrafluoroethylene copolymer layer; or, the insulating layer is a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

Borrow by above-mentioned scheme, the utility model discloses at least, have following advantage:

1. the whole structure is compact, and the self mechanical noise value is extremely low and is not more than 1mV.

2. Can reform transform the structure of current cable, it is minimum to the external diameter influence after finishing reforming transform, and the wall thickness of insulating semi-conductive layer is no longer than 0.1mm.

3. Through the mutual cooperation of the insulating layer and the insulating semi-conducting layer, zero breakdown of the product in the range of 2km can be ensured.

4. Be equipped with the filling rope as supporting, the content lets the inside whole that is of cable, avoids the mutual friction between the sinle silk.

5. Can meet the maximum temperature variation range of-65 ℃ to 200 ℃, and has better universality.

The above description is only an overview of the technical solution of the present invention, and in order to make the technical means of the present invention clearer and can be implemented according to the content of the description, the following detailed description is made with reference to the preferred embodiments of the present invention and accompanying drawings.

Drawings

FIG. 1 is a schematic diagram of a cable structure with four cable cores.

Fig. 2 is a schematic diagram of a cable structure of six cable cores.

The meanings of the reference symbols in the figures are as follows.

1. Shielding layer 2 outer sheath

3. Semi-conductive inner sheath of cable core 4

5. Filling rope 6 insulating semi-conducting layer

7. Insulating layer

Detailed Description

The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.

The high and low temperature resistant micro-signal multi-core low-noise cable shown in fig. 1 to 2 comprises a conductor assembly, and is characterized in that: the wire assembly is filled with a shielding layer 1, and an outer protective layer 2 is arranged outside the shielding layer 1 and used for effective protection. Simultaneously, the wire assembly that adopts is including a plurality of wire rod bodies, and it has semiconduction inner sheath 4 to fill between the wire rod body. And, the utility model discloses still be provided with filling rope 5 between the wire body, can ensure 3 roundings of cable core, difficult emergence variants. During implementation, the adopted wire body comprises a cable core 3 formed by twisting a plurality of copper wires, an insulating semi-conducting layer 6 is wrapped outside the cable core 3, and an insulating layer 7 is filled between the cable core 3 and the insulating semi-conducting layer 6. The wire diameter of the copper wire is 0.05mm to 0.50mm, and the outer diameter of the cable core 3 is not more than 5mm. Therefore, the internal space of the whole cable cannot be additionally occupied on the premise of meeting the requirement of stable communication. Moreover, because of different materials, the copper wires can be nickel-plated copper wires, silver-plated copper wires and tin-plated copper wires. During the manufacturing process, as shown in fig. 1, four cable cores 3 can be distributed around the filling rope 5 according to different use requirements. Alternatively, as shown in fig. 2, six cable cores 3 are distributed around the filling rope 5. During the implementation, the filling rope 5 is made of columnar fluoroplastic resin, so that the use requirements of high temperature resistance and insulating pads are met.

Combine the utility model discloses an embodiment of preferred sees, in order to possess good shielding effect, the shielding layer 1 of adoption is the copper wire weaving layer, and the line footpath of copper wire is 0.05mm to 0.3mm, and weaving density is more than or equal to 95%. Aiming at different types of actually transmitted micro signals, silver-plated copper wires or tin-plated copper wires can be adopted, and the working temperature range of-65 ℃ to 200 ℃ is achieved. For some extreme working environments, nickel-plated copper wires can be adopted, and the working temperature range is satisfied from-65 ℃ to 250 ℃.

Further, the outer protective layer 2 can be an ethylene-polytetrafluoroethylene copolymer layer or a polyvinylidene fluoride layer. Thus, an operating temperature range of-65 ℃ to 150 ℃ is provided. Or, the outer protective layer 2 can be formed by a fluorinated ethylene propylene layer and a crosslinked ethylene-polytetrafluoroethylene copolymer layer, has a working temperature range of-65 ℃ to 200 ℃, and is more resistant to high temperature.

In view of practical implementation, the semi-conductive inner sheath layer 4 adopted by the utility model is an ethylene-polytetrafluoroethylene copolymer layer. Thus, an operating temperature range of-65 ℃ to 150 ℃ is provided. Alternatively, the semiconductive inner sheath layer 4 used is a crosslinked ethylene-polytetrafluoroethylene copolymer layer. Therefore, the working temperature range of-65 ℃ to 200 ℃ can be met.

Still further, the insulating semiconductive layer 6 is an ethylene-polytetrafluoroethylene copolymer layer, possessing an operating temperature range of-65 ℃ to 150 ℃. For more high temperature resistance requirements, a fluorinated ethylene propylene layer or a crosslinked ethylene-polytetrafluoroethylene copolymer layer can be selected. Thus, the working temperature range of-65 ℃ to 200 ℃ can be satisfied. During implementation, 3% to 10% of nano-carbon black can be mixed in the insulating semiconductive layer 6.

Furthermore, the insulating layer 7 ethylene-polytetrafluoroethylene copolymer layer adopted by the utility model meets the working temperature range of-65 ℃ to 150 ℃. If the environment is to be limited, the insulating layer 7 may be formed by a layer of fluorinated ethylene propylene or a layer of cross-linked ethylene-polytetrafluoroethylene copolymer, so that the operating temperature of the insulating layer can be maintained within a range of-65 ℃ to 200 ℃.

During actual manufacturing, the semi-conductive layer can be produced in an extrusion mode, so that the production efficiency is improved, and meanwhile, the integrity of the cable can be better improved. Meanwhile, the semiconductive inner protection layer can be classified into modified fluororesin and can be filled in a filling mode, and dead angles are avoided.

Through foretell expression of characters and combination of the attached drawing can be seen, adopt the utility model discloses afterwards, possess following advantage:

5. Can meet the maximum temperature change range of-65 ℃ to 200 ℃, and has better universality.

Furthermore, the indication directions or positional relationships described in the present invention are directions or positional relationships based on the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the indicated device or structure must have a specific direction or operate in a specific directional configuration, and therefore, should not be construed as limiting the present invention.

In the present invention, unless otherwise expressly stated or limited, the terms "connected" and "disposed" are to be construed broadly, e.g., as meaning a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other or mutually interacted. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art. And it may be directly on the other component or indirectly on the other component. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.

It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the invention and for simplicity in description, and are not intended to indicate or imply that the device or component so referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims

1. High low temperature resistant small signal multicore low noise cable of formula, including the wire assembly, its characterized in that: the cable comprises a lead assembly and is characterized in that a shielding layer is filled outside the lead assembly, an outer protective layer is arranged outside the shielding layer, the lead assembly comprises a plurality of wire bodies, a semiconductive inner protective layer is filled between the wire bodies, a filling rope is further arranged between the wire bodies, each wire body comprises a cable core formed by twisting a plurality of copper wires, an insulating semiconductive layer is wrapped outside each cable core, an insulating layer is filled between each cable core and the corresponding insulating semiconductive layer, the wire diameter of each copper wire is 0.05 mm-0.50 mm, the outer diameter of each cable core is not larger than 5mm, and each copper wire is a nickel-plated copper wire or a silver-plated copper wire or a tin-plated copper wire.

2. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the shielding layer is a copper wire braid layer, the wire diameter of the copper wire is 0.05 mm-0.3 mm, the braiding density is larger than or equal to 95%, and the copper wire is a nickel-plated copper wire or a silver-plated copper wire or a tin-plated copper wire.

3. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the outer protective layer is an ethylene-polytetrafluoroethylene copolymer layer; or a polyvinylidene fluoride propylene layer; or a layer of fluorinated ethylene propylene; or a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

4. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the semiconductive inner protection layer is an ethylene-polytetrafluoroethylene copolymer layer or a crosslinked ethylene-polytetrafluoroethylene copolymer layer.

5. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the filling rope is made of columnar fluoroplastic resin.

6. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the insulating semi-conducting layer is a fluorinated ethylene propylene layer or an ethylene-polytetrafluoroethylene copolymer layer or a cross-linked ethylene-polytetrafluoroethylene copolymer layer.

7. The high and low temperature resistant micro-signal multi-core low-noise cable of claim 1, wherein: the insulating layer is a fluorinated ethylene propylene layer or an ethylene-polytetrafluoroethylene copolymer layer or a crosslinked ethylene-polytetrafluoroethylene copolymer layer.