CN218465940U - CVD growth sintering equipment - Google Patents
CVD growth sintering equipment Download PDFInfo
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- CN218465940U CN218465940U CN202220252866.1U CN202220252866U CN218465940U CN 218465940 U CN218465940 U CN 218465940U CN 202220252866 U CN202220252866 U CN 202220252866U CN 218465940 U CN218465940 U CN 218465940U
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Abstract
The utility model provides CVD growth sintering equipment, which comprises an air inlet device, a vacuum cavity, a plasma generator, a heating device and a pressurizing device, wherein the vacuum cavity is used for placing a substrate to be grown and sintered; the plasma generator is arranged between the air inlet device and the vacuum cavity, and the growth gas conveyed by the air inlet device enters the vacuum cavity after being ionized by the plasma generator; the heating equipment is used for heating the vacuum cavity and providing the temperature required by growth of the ionized growth gas in the vacuum cavity on the substrate and the temperature required by sintering; the pressurizing device is used for applying pressure to the substrate during sintering. The utility model discloses in same cavity, realize CVD growth and sintering, avoid the process switching equipment of material growth and sintering, experience repeated processes such as heating and cooling, reduced production processes and cost.
Description
Technical Field
The utility model belongs to the technical field of CVD, concretely relates to CVD growth sintering equipment.
Background
At present, the mainstream method in the growth of carbon materials is a chemical vapor deposition method, and generally, a growth atmosphere is introduced into a specific cavity to perform deposition growth at a certain temperature. The grown carbon material generally needs to be taken out for subsequent treatment and use.
In recent years, composite materials of carbon materials and metal materials have been developed and exhibit excellent properties including electrical, mechanical, and thermodynamic aspects. These materials are now well accepted and used in the art and in the marketplace.
The desired shape is produced primarily by melt mixing a powdered carbon material with a metallic material. This method cannot achieve a satisfactory effect due to dispersion, contact, dispersion of the carbon material, and tensile breakage during molding.
Therefore, the carbon material grows in situ on the metal material, and then the grown metal material is subjected to high-temperature melting or sintering molding. In this method, the growth and sintering are carried out in two different operations, and the equipment used is different, but both require high temperature and even a specified atmosphere. Materials flow among different devices, so that the metal materials need to undergo repeated processes of temperature rise and drop and the like, and the disadvantages of increased energy consumption, prolonged working procedures, increased cost and the like are caused. The cost of the material can not be reduced continuously, and the industrial use and popularization are influenced.
SUMMERY OF THE UTILITY MODEL
Aiming at one or more problems in the prior art, the utility model provides a CVD growth sintering device, which comprises an air inlet device, a vacuum cavity, a plasma generator, a heating device and a pressurizing device, wherein the vacuum cavity is used for placing a substrate to be grown and sintered; the plasma generator is arranged between the air inlet device and the vacuum cavity, and the growth gas conveyed by the air inlet device enters the vacuum cavity after being ionized by the plasma generator; the heating equipment is used for heating the vacuum cavity and providing the temperature required by growth of the ionized growth gas in the vacuum cavity on the substrate and the temperature required by sintering; the pressurizing device is used for applying pressure to the substrate during sintering.
Optionally, the vacuum-pumping device is further included for pumping vacuum to the vacuum chamber, and preferably, the vacuum-pumping device is a vacuum pump; preferably, the vacuum-pumping device further comprises a valve, wherein the valve is opened, the vacuum-pumping device pumps vacuum to the vacuum chamber, the valve is closed, and the vacuum-pumping device stops pumping vacuum to the vacuum chamber.
Optionally, the bottom of the vacuum chamber is made of high-temperature-resistant hard metal, preferably, the high-temperature-resistant hard metal is made of one or more of tungsten, molybdenum, titanium, tantalum and niobium, or an alloy material containing the high-temperature-resistant hard metal; preferably, the bottom of the vacuum cavity is rectangular and is used as a sample table for placing a substrate; preferably, the vacuum chamber is open from the top or/and the side walls; preferably, the vacuum chamber is open from the bottom and the side walls.
Optionally, the gas inlet equipment comprises a gas inlet pipe and a gas mixer, the gas inlet pipe is used for inputting multiple growth gases, the gas mixer is used for mixing the multiple growth gases and sending the mixed gases into the plasma generator through the gas inlet pipe, preferably, the gas inlet equipment further comprises a flow controller installed at the gas inlet end of the gas mixer and used for controlling the flow of the growth gases entering the gas mixer from the gas inlet pipe, and preferably, the gas inlet equipment further comprises a gas homogenizing device, the gas homogenizing device is arranged between the gas mixer and the plasma generator and used for uniformly diffusing the multiple growth gases mixed by the gas mixer and sending the diffused gases into the plasma generator through the gas inlet pipe.
Optionally, the vacuum chamber device further comprises an air outlet pipe which is communicated with the vacuum chamber and is used for discharging the waste gas of the vacuum chamber, and preferably, the vacuum chamber device further comprises a vacuum pump which is used for pumping the waste gas of the vacuum chamber to the air outlet pipe; further preferably, the device further comprises a valve, the valve is opened, the vacuum pump pumps the waste gas in the vacuum chamber to the gas outlet pipe, the valve is closed, and the waste gas is stopped from flowing to the gas outlet pipe.
Optionally, a barometer is further included for measuring the air pressure of the vacuum chamber, preferably the air pressure of the vacuum chamber is 0.001Pa to 0.1MPa, preferably 1Pa to 5000Pa. The growth and sintering are generally carried out in a sub-atmospheric environment, so as to improve the growth quality, reduce the presence of oxygen and avoid unnecessary oxidation and other reactions during sintering.
Optionally, the vacuum chamber further comprises a temperature sensor for measuring the temperature in the vacuum chamber, preferably in a range of 200 ℃ to 2000 ℃, preferably 400 ℃ to 1000 ℃.
Optionally, the pressurizing device is an extruding part, the extruding part is arranged on the opposite surface of the vacuum chamber for placing the substrate during growth, and the extruding part moves towards the substrate during sintering and pressurizing, and the pressure is applied, preferably, the range of the pressure applied by the pressurizing device is 0 MPa-1000 MPa, and preferably 0.1 MPa-100 MPa. Increasing the pressure above one atmosphere can reduce the porosity and increase the compactness of the material, thereby increasing the contact performance between different components of the material and improving the material performance.
Optionally, the substrate is a metal material, preferably the metal material is an alloy of one or more of Cu, fe, co, ru, ir, ni, pd or Au; preferably Cu or Ni or a copper-nickel alloy; the growth gas comprises one or more of hydrogen, hydrocarbon gas, nitrogen, argon, ethanol, water vapor and oxygen; preferably a mixed gas of hydrogen and methane. The graphene is grown by cracking a carbon source containing carbon, wherein the cracking needs catalysis of a metal material, and carbon atoms after catalysis are dissociated on the surface of the metal and undergo the processes of nucleation and growth until the carbon atoms grow to a required degree, such as being distributed on the surface of the metal.
Optionally, the ionization mode of the plasma generator is one or more of radio frequency, microwave, arc discharge, laser, high-frequency electric field and high-frequency magnetic field.
CVD growth sintering equipment provides one kind in the same cavity, realizes CVD growth and sintered equipment, and growth quality has been guaranteed simultaneously to this structure. Therefore, the process of material growth and sintering can be prevented from switching equipment and undergoing repeated processes of temperature rise and drop and the like, and the production process and the cost are reduced.
Drawings
FIG. 1 is a schematic diagram of a CVD growth sintering apparatus according to the present invention.
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
In the description of the present invention, it is to be understood that the terms "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience of description and simplicity of description, and do not indicate or imply that the device or element so indicated must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the invention. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed. The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention.
Fig. 1 is a schematic structural diagram of a CVD growth sintering apparatus according to the present invention, as shown in fig. 1, the CVD growth sintering apparatus includes an air inlet device, a vacuum chamber 8 for placing a substrate 1 to be grown and sintered, a plasma generator 6, a heating device 3, and a pressurizing device 7; the plasma generator is arranged between the air inlet device and the vacuum cavity, and the growth gas conveyed by the air inlet device enters the vacuum cavity after being ionized by the plasma generator; the heating equipment is used for heating the vacuum cavity and providing the temperature required by growth of the ionized growth gas in the vacuum cavity on the substrate and the temperature required by sintering; the pressurizing device is used for applying pressure to the substrate during sintering.
In one embodiment, a vacuum evacuation apparatus 10 is also included for evacuating the vacuum chamber.
Preferably, the evacuation device is a vacuum pump.
Preferably, the vacuum device further comprises a valve 9, wherein the valve is opened, the vacuum device vacuumizes the vacuum chamber, the valve is closed, and the vacuum device stops vacuuming the vacuum chamber.
In one embodiment, the vacuum chamber bottom 2 is a refractory hard metal, preferably an alloy of one or more of tungsten, molybdenum, titanium, tantalum, niobium, or an alloy material comprising the same.
In one embodiment, the vacuum chamber is open from the top or/and the side walls.
In one embodiment, the vacuum chamber is open from the bottom and the side walls.
Preferably, the bottom of the vacuum cavity is rectangular and is used as a sample table for placing a base.
In one embodiment, the gas inlet apparatus comprises a gas inlet pipe 4 for inputting a plurality of growth gases and a gas mixer 5 for mixing the plurality of growth gases and feeding the mixed gases into the plasma generator through the gas inlet pipe.
Preferably, the gas mixer further comprises a flow controller installed at the gas inlet end of the gas mixer for controlling the flow of the growth gas entering the gas mixer from the gas inlet pipe.
Preferably, the device further comprises a gas homogenizing device, wherein the gas homogenizing device is arranged between the gas mixer and the plasma generator and is used for uniformly diffusing the multiple growth gases mixed by the gas mixer and sending the multiple growth gases into the plasma generator through the gas inlet pipe.
In one embodiment, the exhaust pipe 11 is further included, and is communicated with the vacuum chamber for exhausting the exhaust gas of the vacuum chamber.
Preferably, a vacuum pump is further included for pumping the exhaust gas of the vacuum chamber to the outlet pipe.
Preferably, the device further comprises a valve, wherein the valve is opened, the vacuum pump pumps the waste gas in the vacuum chamber to the gas outlet pipe, and the valve is closed to stop the waste gas from flowing to the gas outlet pipe. The utility model discloses grow and sintering, used vacuum pump and valve, the same set of valve and vacuum pump of preferred use.
In one embodiment, the device further comprises a barometer for measuring the air pressure of the vacuum chamber, preferably the air pressure of the vacuum chamber is 0.001 Pa-0.1 MPa, preferably 1Pa-5000 Pa.
In one embodiment, a temperature sensor is further included for measuring the temperature within the vacuum chamber, preferably in the range of 200 ℃ to 2000 ℃, preferably 400 ℃ to 1000 ℃.
In one embodiment, the pressurizing device is a pressing part, the pressing part is arranged on the opposite surface of the vacuum chamber for placing the substrate during growth, and the pressing part moves towards the substrate during sintering and pressurizing, and the pressurizing device applies pressure, preferably, the range of the pressurizing device applying pressure is 0 MPa-1000 MPa, and preferably 0.1 MPa-100 MPa.
In one embodiment, the substrate is a metal material, preferably the metal material is an alloy of one or more of Cu, fe, co, ru, ir, ni, pd, or Au; preferably Cu or Ni or a copper-nickel alloy; the growth gas comprises one or more of hydrogen, hydrocarbon gas, nitrogen, argon, ethanol, water vapor and oxygen; preferably a mixed gas of hydrogen and methane.
In one embodiment, the plasma generator is ionized by one or more of radio frequency, microwave, arc discharge, laser, high-frequency electric field and high-frequency magnetic field.
In one embodiment, the vacuum chamber is a circular stainless steel chamber with an inner diameter of 500mm. The bottom substrate is made of tungsten, the heating device is a resistance wire, the resistance wire surrounds the periphery and the bottom of the cylindrical vacuum cavity, and the resistance wire is adopted to heat the vacuum cavity. The flow controller is a gas float flowmeter, the plasma generator is a 13.56MHz radio frequency power supply, hydrogen and methane are introduced under the control of the gas float flowmeter, and after gas mixing by the gas mixer, the hydrogen and methane are ionized by the 13.56MHz radio frequency power supply and then enter the vacuum cavity for growth reaction. The extrusion part of the vacuum hot pressing is made of stainless steel, and the extrusion part is pressurized in a hydraulic mode, wherein the maximum pressure is 100MPa. And the gas of the gas outlet pipe enters the vacuum pump after passing through the butterfly valve and is discharged.
During growth, the vacuum pump and the butterfly valve are opened, and the required vacuum is pumped (10) -6 Pa-0.05MPa, preferably 1Pa-5000 Pa), and the vacuum hot-pressing extrusion part is stopped at the upper part of the cavity. Placing the product to be grown at the bottom of a cavity, heating to the reaction temperature of 300-1600 ℃, preferably 400-700 ℃, introducing ionized hydrogen and methane gas, growing and reacting on the surface of the product, wherein the pressure of the growth atmosphere is 1-0.05 MPa, preferably 100-5000 Pa (no gas is introduced, a vacuum pump keeps vacuumizing, namely vacuum degree, after the gas is introduced, the strong pressure of the cavity rises, and at the moment, the pressure can be adjusted to the required pressure by adjusting the size of a valve switch between the vacuum pump and the cavity, namely the pressure of the growth atmosphere). The waste gas is discharged through a butterfly valve,And pumping out by a vacuum pump, wherein the opening and closing angle of a butterfly valve is automatically adjusted according to the required cavity pressure. After the growth is finished, stopping introducing gas, closing a plasma power supply, opening a butterfly valve, heating to the temperature required by sintering (to 300-2000 ℃, preferably 700-1300 ℃), and then carrying out vacuum hot pressing. And after sintering is finished, stopping heating, stopping hot pressing, and cooling to room temperature under the condition of keeping vacuum. The product is then removed by breaking the vacuum. The butterfly valve is opened for more efficient evacuation. When the butterfly valve has different functions and different air exhaust efficiencies, the pressure of the cavity is adjusted by controlling the air inlet flow according to the butterfly valve, and when the air is required to be exhausted, the butterfly valve is generally opened to the maximum state, namely, all the butterfly valves are opened.
In one embodiment, the vacuum chamber is a square stainless steel chamber with a side length of 450mm. The bottom substrate is made of tungsten material and is heated by a graphite rod, and the graphite rod surrounds the periphery and the bottom of the cylindrical vacuum cavity. Introducing hydrogen and methane under the control of a gas mass flow meter, ionizing by a 13.56MHz radio frequency power supply after gas mixing, and then entering a vacuum cavity for growth reaction. The extrusion part of the vacuum hot pressing is made of stainless steel, and the extrusion part is pressurized in a hydraulic mode, wherein the maximum pressure is 100MPa. And the gas of the gas outlet pipe enters the vacuum pump after passing through the automatic butterfly valve and is discharged.
During growth, the vacuum pump and the butterfly valve are opened, the required vacuum is pumped, and the extrusion part for vacuum hot pressing is stopped at the upper part of the cavity. And placing the product to be grown at the bottom of the cavity, heating to the reaction temperature, introducing ionized hydrogen and methane gas, and growing and reacting on the surface of the product. The waste gas is pumped out through a butterfly valve and a vacuum pump, wherein the opening and closing angle of the butterfly valve is automatically adjusted according to the required cavity pressure. And after the growth is finished, stopping introducing gas, closing the plasma power supply, opening the butterfly valve, heating to the temperature required by sintering, and then carrying out vacuum hot pressing. And after sintering is finished, stopping heating, stopping hot pressing, and cooling to room temperature under the condition of keeping vacuum. The product is then removed by breaking the vacuum.
In one embodiment, the vacuum chamber is a circular stainless steel chamber with an inner diameter of 100mm. The bottom substrate is made of molybdenum material and is heated by a resistance wire, and the resistance wire surrounds the bottom of the cylindrical vacuum cavity. Introducing hydrogen and acetylene under the control of a gas mass flow meter, ionizing by a 40KHz radio frequency power supply after gas mixing, and then entering a vacuum cavity for growth reaction. The extrusion part of vacuum hot pressing is made of tungsten, and pressurization is carried out in a mechanical pressurization mode, wherein the maximum pressure is 50MPa. And the gas of the gas outlet pipe enters the vacuum pump after passing through the automatic butterfly valve and is discharged.
During growth, the vacuum pump and the butterfly valve are opened, the required vacuum is pumped, and the extrusion part for vacuum hot pressing is stopped at the upper part of the cavity. And placing the product to be grown at the bottom of the cavity, heating to the reaction temperature, introducing ionized hydrogen and acetylene gas, and growing and reacting on the surface of the product. The waste gas is pumped out through a butterfly valve and a vacuum pump, wherein the opening and closing angle of the butterfly valve is automatically adjusted according to the required pressure intensity of the cavity. And after the growth is finished, stopping introducing gas, closing the plasma power supply, opening the butterfly valve, heating to the temperature required by sintering, and then carrying out vacuum hot pressing. And after sintering is finished, stopping heating, stopping hot pressing, and cooling to room temperature under the condition of keeping vacuum. The product is then removed by breaking the vacuum.
In one embodiment, the vacuum chamber is a circular stainless steel chamber with an inner diameter of 500mm. The bottom substrate is made of tungsten, and is heated by adopting a resistance wire, and the resistance wire surrounds the bottom of the cylindrical vacuum cavity. Introducing hydrogen and methane under the control of a gas mass flow meter, mixing the gases, ionizing by a 2.45GHz microwave power supply, and then entering a vacuum cavity for growth reaction. The extrusion part of vacuum hot pressing is made of tungsten, and pressurization is carried out in a hydraulic mode, wherein the maximum pressure is 100MPa. And the gas of the gas outlet pipe enters the vacuum pump after passing through the automatic butterfly valve and is discharged.
During growth, the vacuum pump and the butterfly valve are opened, the required vacuum is pumped, and the extrusion part for vacuum hot pressing is stopped at the upper part of the cavity. And placing the product to be grown at the bottom of the cavity, heating to the reaction temperature, introducing ionized hydrogen and methane gas, and growing and reacting on the surface of the product. The waste gas is pumped out through a butterfly valve and a vacuum pump, wherein the opening and closing angle of the butterfly valve is automatically adjusted according to the required pressure intensity of the cavity. And after the growth is finished, stopping introducing the gas, closing the plasma power supply, opening a butterfly valve, heating to the temperature required by sintering, and then carrying out vacuum hot pressing. And after sintering is finished, stopping heating, stopping hot pressing, and cooling to room temperature under the condition of keeping vacuum. The product is then removed by breaking the vacuum.
The utility model discloses a redesign CVD cavity structures has integrated the function of calendering sintering, simultaneously in order to guarantee the growth quality, has integrated plasma again and has taken place the function, has realized unmovable growth material position, and carbon material and metal material's combined material is prepared out to the one-step method. The CVD growth chamber requires a high temperature and vacuum environment, while the calender sintering also requires a high temperature, in some cases, a vacuum environment. In the current composite process of carbon materials and metal materials, the two processes are necessary, but at present, the materials are processed and manufactured through different special equipment, and in the process, the materials need to be repeatedly subjected to the processes of vacuumizing, heating, cooling and breaking vacuum, and need to be exposed in the atmosphere and moved.
The utility model discloses an equipment of new design, unmovable can realize CVD growth and sintering simultaneously in same cavity, has shortened process and activity duration, has also reduced the energy consumption by a wide margin. Meanwhile, in order to ensure the growth quality during low-temperature growth, the plasma generation function is added, and the cracking condition of the carbon source is reduced. The composite metal material is not exposed to the atmosphere in the whole process, and the quality and the stability of material preparation can be improved to a certain extent.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (26)
1. The CVD growth sintering equipment is characterized by comprising air inlet equipment, a vacuum cavity, a plasma generator, heating equipment and pressurizing equipment, wherein the vacuum cavity is used for placing a substrate to be grown and sintered; the plasma generator is arranged between the air inlet device and the vacuum cavity, and the growth gas conveyed by the air inlet device enters the vacuum cavity after being ionized by the plasma generator; the heating equipment is used for heating the vacuum cavity and providing the temperature required by growth of the ionized growth gas in the vacuum cavity on the substrate and the temperature required by sintering; the pressurizing device is used for applying pressure to the substrate during sintering.
2. The CVD growth sintering apparatus of claim 1, further comprising a vacuum evacuation apparatus for evacuating the vacuum chamber.
3. The CVD growth sintering apparatus of claim 2, wherein the evacuation apparatus is a vacuum pump.
4. The CVD growth sintering apparatus of claim 2, further comprising a valve, wherein the valve is opened, the vacuum pumping apparatus pumps vacuum to the vacuum chamber, the valve is closed, and the vacuum pumping apparatus stops pumping vacuum to the vacuum chamber.
5. The CVD growth sintering equipment of claim 1, wherein the bottom of the vacuum cavity is made of high temperature resistant hard metal.
6. The CVD growth sintering equipment of claim 1, wherein the bottom of the vacuum cavity is rectangular and is used as a sample table for placing a substrate.
7. The CVD growth sintering apparatus of claim 1, wherein the vacuum chamber is open from a top or/and a sidewall.
8. The CVD growth sintering apparatus of claim 1, wherein the vacuum chamber is open from the bottom and the side walls.
9. The CVD growth sintering apparatus according to claim 1, wherein the gas inlet apparatus comprises a gas inlet pipe for inputting a plurality of growth gases and a gas mixer for mixing the plurality of growth gases and feeding the mixture into the plasma generator through the gas inlet pipe.
10. A CVD growth sintering apparatus according to claim 9, further comprising a flow controller installed at a gas inlet end of the gas mixer for controlling a flow of the growth gas from the gas inlet pipe into the gas mixer.
11. A CVD growth sintering apparatus according to claim 9, further comprising a gas homogenizing device, wherein the gas homogenizing device is arranged between the gas mixer and the plasma generator and is used for diffusing the multiple growth gases mixed by the gas mixer uniformly and sending the multiple growth gases into the plasma generator through the gas inlet pipe.
12. The CVD growth sintering apparatus of claim 1, further comprising an air outlet pipe, wherein the air outlet pipe is communicated with the vacuum chamber and used for discharging waste gas of the vacuum chamber.
13. A CVD growth sintering apparatus according to claim 12, further comprising a vacuum pump for pumping off exhaust gas from the vacuum chamber to the outlet duct.
14. A CVD growth sintering apparatus according to claim 13, further comprising a valve, wherein the valve is opened, the vacuum pump pumps the waste gas from the vacuum chamber to the gas outlet, and the valve is closed to stop the waste gas from flowing to the gas outlet.
15. The CVD growth sintering apparatus of claim 1 further comprising a barometer for measuring the pressure of the vacuum chamber.
16. A CVD growth sintering apparatus according to claim 15, wherein the pressure of the vacuum chamber is 0.001Pa to 0.1MPa.
17. A CVD growth sintering apparatus according to claim 16, wherein a pressure of the vacuum chamber is 1Pa to 5000Pa.
18. The CVD growth sintering apparatus of claim 1, further comprising a temperature sensor for measuring a temperature within the vacuum chamber.
19. The CVD growth sintering apparatus of claim 18, wherein the temperature range is 200 ℃ to 2000 ℃.
20. The CVD growth sintering apparatus of claim 19, wherein the temperature range is 400 ℃ to 1000 ℃.
21. A CVD growth sintering apparatus according to claim 1, wherein the pressing means is a pressing member, the pressing member is disposed on the opposite side of the vacuum chamber to the substrate during growth, and the pressing member is moved toward the substrate to apply pressure during sintering pressurization.
22. A CVD growth sintering apparatus according to claim 21, characterized in that the pressurizing means applies a pressure in the range of 0MPa to 1000MPa.
23. A CVD growth sintering apparatus according to claim 22, characterized in that the pressurizing means applies a pressure in the range of 0.1MPa to 100MPa.
24. A CVD growth sintering apparatus according to claim 1, wherein the substrate is a metallic material.
25. The CVD growth sintering apparatus of claim 24, wherein the metal material is Cu or Ni or a copper nickel alloy.
26. The CVD growth sintering equipment of claim 1, wherein the ionization mode of the plasma generator is one or more of radio frequency, microwave, arc discharge, laser, high-frequency electric field and high-frequency magnetic field.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220252866.1U CN218465940U (en) | 2022-02-07 | 2022-02-07 | CVD growth sintering equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220252866.1U CN218465940U (en) | 2022-02-07 | 2022-02-07 | CVD growth sintering equipment |
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| CN218465940U true CN218465940U (en) | 2023-02-10 |
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