CN218448909U

CN218448909U - Novel junction external cavity semiconductor laser structure

Info

Publication number: CN218448909U
Application number: CN202222775238.4U
Authority: CN
Inventors: 王延; 毋妍妍; 于晶晶
Original assignee: Shenyang Normal University
Current assignee: Shenyang Normal University
Priority date: 2022-10-21
Filing date: 2022-10-21
Publication date: 2023-02-03
Anticipated expiration: 2032-10-21

Abstract

The utility model discloses a novel knot exocoel semiconductor laser structure has arranged in proper order from a left side to the right side: the device comprises a first aspheric collimating lens, a single-angle gain chip, a second aspheric collimating lens, a long-wave band-pass filter and a diffraction grating; the cavity surfaces on two sides of the single-facet gain chip are positioned at the focal length positions of the first aspheric collimating lens and the second aspheric collimating lens on two sides; an included angle is formed between the emergent light direction on the right side of the single-angle-surface gain chip and the horizontal direction; the utility model provides an above-mentioned laser instrument simple structure, convenient operation when realizing the output of super narrow linewidth, has wide tunable characteristic concurrently. The external cavity semiconductor laser achieves laser output with a tuning range of 140nm and a line width of 3.29kHz at 1550 nm.

Description

Novel junction external cavity semiconductor laser structure

Technical Field

The utility model discloses a relate to laser instrument technical field especially relates to a novel knot exocoel semiconductor laser structure.

Background

Tunable semiconductor lasers have important applications in the fields of high-resolution spectroscopy, broadband communication network systems, measurement sensing, and the like, wherein the semiconductor lasers are required to have the characteristics of narrow line width, wide tunable range, low noise, and the like.

Commonly used tunable semiconductor lasers are mainly distributed feedback lasers (DFB), distributed bragg reflector lasers (DBR), vertical Cavity Surface Emitting Lasers (VCSEL) and external cavity semiconductor lasers (ECDL). For distributed feedback lasers, distributed bragg reflector lasers and vertical cavity surface emitting lasers, wavelength tuning is achieved by temperature or current modulation, and the tunable range is generally only a few nanometers to a dozen nanometers.

Therefore, it is an urgent need to solve the problem of providing an external cavity semiconductor laser having a unique external cavity structure, capable of realizing wavelength tuning, etc.

SUMMERY OF THE UTILITY MODEL

In view of this, the utility model discloses a novel knot exocoel semiconductor laser structure is provided, this laser can realize narrow linewidth, super wide tunable, high side mode suppression ratio.

The utility model provides a technical scheme specifically does, a novel knot exocoel semiconductor laser structure has arranged in proper order from a left side to the right side: the device comprises an aspheric collimating lens, a single-angle gain chip, an aspheric collimating lens, a long-wave band-pass filter and a diffraction grating;

the cavity surfaces on two sides of the single-facet gain chip are positioned at the focal length positions of the aspheric collimating lenses on two sides and the aspheric collimating lenses on two sides;

an included angle is formed between the emergent light direction on the right side of the single-angle-surface gain chip and the horizontal direction;

the axial direction of an external cavity structure formed by the right cavity surface of the single-angle-surface gain chip, the aspheric collimating lens, the long-wave band-pass filter and the diffraction grating is consistent with the emergent light direction of the right side of the single-angle-surface gain chip.

Furthermore, the included angle between the emergent light at the right side of the single-angle-surface gain chip and the horizontal direction is 19.5 degrees; the axial direction of the external cavity structure is consistent with the direction of the emergent light at the right side of the single-angle-face gain chip, and the included angles of the external cavity structure and the horizontal direction are 19.5 degrees.

Furthermore, the laser structure further comprises an air cooling base, and the single-corner-face gain chip is fixed on the air cooling base.

Further, the right surface of the single-corner-face gain chip is plated with a high-transmittance film, and the transmittance is less than 0.01%; the left surface is coated with a reflecting film, and the reflectivity is about 10%.

The utility model provides a pair of novel knot exocoel semiconductor laser structure has the optical characteristic of wide tunable, narrow linewidth output concurrently to the grating is as wavelength tuning device, adds optical filter in the exocoel, has narrow linewidth, ultra wide tunable, high side mode rejection ratio.

The laser has the advantages of simple structure, convenience in operation, and capability of realizing ultra-narrow line width output and wide and tunable characteristics. The utility model provides an exocoel semiconductor laser has realized that tuning range reaches 140nm at 1550nm wave band, and the linewidth is low to 3.29 kHz's laser output.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present invention and, together with the description, serve to explain the principles of the invention.

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic diagram of a structure of a novel junction external cavity semiconductor laser provided by an embodiment of the present invention.

Detailed Description

Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings in which the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of systems consistent with certain aspects of the invention, as detailed in the appended claims.

In order to solve the problems that the wavelength tuning of the laser in the prior art is realized by depending on temperature or current modulation, the tunable range is small, and the like, the embodiment provides a novel junction external cavity semiconductor laser structure, as shown in fig. 1, the structure is sequentially arranged from left to right: the device comprises a first aspheric collimating lens 6, a single-angle gain chip 1, a second aspheric collimating lens 2, a long-wave band-pass filter 3 and a diffraction grating 4; the left and right are based on the display of FIG. 1;

the cavity surfaces at two sides of the single-angle surface gain chip 1 are positioned at the focal length positions of the first aspheric collimating lens 6 and the second aspheric collimating lens 2 at two sides;

an included angle is formed between the emergent light direction on the right side of the single-angle-surface gain chip 1 and the horizontal direction;

the axial direction of an external cavity structure formed by the right cavity surface of the single-angle-surface gain chip 1, the aspheric collimating lens 2, the long-wave band-pass filter 3 and the diffraction grating 4 is consistent with the emergent light direction of the right side of the single-angle-surface gain chip 1.

Furthermore, the included angle between the emergent light at the right side of the single-angle-surface gain chip 1 and the horizontal direction is 19.5 degrees;

the axial direction of the external cavity structure is consistent with the emergent light direction of the right side of the single-angle-surface gain chip 1, and the included angle of the external cavity structure and the horizontal direction is 19.5 degrees.

The single-angle-face gain chip 1 is fixed on the air-cooled base 5, the single-angle-face gain chip 1 has a wide gain spectrum, the right side is plated with a high-transmittance film, the transmittance is less than 0.01%, the left side is plated with a reflection film, and the reflectance is about 10%;

in the laser structure, the aspheric collimating lens 2 is used for collimating output light;

the long-wave band-pass filter 3 has high transmittance in a wavelength tuning range, the transmittance is greater than 90%, and the long-wave band-pass filter 3 can inhibit adjacent mode coupling and narrow the line width;

the diffraction grating 4 is used as a mode selection optical element in the external cavity structure, selects the actual mode in the light path, plays the role of a reflector and forms a resonant cavity with the left cavity surface of the single-angle-surface gain chip 1; the number of the grating lines of the diffraction grating 4 can be selected according to experimental requirements, the line width can be further narrowed by properly increasing the line width, and the tunable range is increased;

the air cooling base 5 enables the chip to work in a low-temperature state in a stable state;

the first aspheric collimating lens 6 is used for collimating the output light in the structure for subsequent testing and use.

The semiconductor laser provided by the embodiment is based on a grating feedback type structure, and is provided with a long-wave band-pass filter, so that the semiconductor laser is a novel external cavity structure. Light is emitted from the right cavity surface of the single-angle-surface gain chip 1, is collimated by the aspheric collimating lens 2, and is transmitted through the long-wave band-pass filter 3, is incident to the diffraction grating 4, is diffracted by the diffraction grating 4, and first-order diffracted light returns to the cavity of the single-angle-surface gain chip 1 through an original light path, and is emitted from the left cavity surface of the single-angle-surface gain chip 1 after being oscillated and excited in the resonant cavity formed by the left cavity surface of the single-angle-surface gain chip 1 and the diffraction grating 4, and is collimated by the first aspheric collimating lens 6 to obtain emergent laser. After the external cavity semiconductor laser in this embodiment is lased, wavelength tuning can be achieved by rotating the diffraction grating 4. When the parameters of the diffraction grating 4 are at 1550nm waveband, the tuning range of the output light of the external cavity semiconductor laser can reach 140nm, and the line width is as low as 3.29kHz.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. The utility model provides a novel knot external cavity semiconductor laser structure which characterized in that has arranged from a left side to the right side in proper order: the device comprises a first aspheric collimating lens (6), a single-angle gain chip (1), a second aspheric collimating lens (2), a long-wave band-pass filter (3) and a diffraction grating (4);

the cavity surfaces on two sides of the single-angle surface gain chip (1) are positioned at the focal length positions of the first aspheric collimating lens (6) and the second aspheric collimating lens (2) on two sides;

an included angle is formed between the emergent light direction on the right side of the single-angled-surface gain chip (1) and the horizontal direction;

the axial direction of an external cavity structure formed by the right cavity surface of the single-angle-surface gain chip (1), the second aspheric collimating lens (2), the long-wave band-pass filter (3) and the diffraction grating (4) is consistent with the emergent light direction of the right side of the single-angle-surface gain chip (1).

2. A novel junction external cavity semiconductor laser structure as claimed in claim 1, wherein the angle between the right outgoing light of the single-facet gain chip (1) and the horizontal direction is 19.5 °; the axial direction of the external cavity structure is consistent with the emergent light direction of the right side of the single-angle-surface gain chip (1), and the included angles of the external cavity structure and the horizontal direction are 19.5 degrees.

3. The novel junction external cavity semiconductor laser structure according to claim 1, further comprising an air-cooled base (5), wherein the single-facet gain chip (1) is fixed on the air-cooled base (5).

4. The novel junction external cavity semiconductor laser structure as claimed in claim 1, wherein the right surface of the single-corner-facet gain chip (1) is coated with a high-transmittance film, and the transmittance is less than 0.01%; the left surface is coated with a reflecting film, and the reflectivity is about 10%.