CN218385222U - Inductance structure - Google Patents

Abstract

The application provides an inductance structure, includes: a first liner; a second liner; a magnetizer positioned between the first pad and the second pad; an upper inductor lead including a first pad connected to the first pad and a second pad connected to the second pad; and a lower inductance lead electrically connecting the first pad and the second pad, the lower inductance lead not including the seed layer. According to the inductance structure, the lower inductance lead is formed by utilizing the wire bond (wire bond) to replace a substrate/redistribution layer in the inductance structure, so that the substrate/redistribution layer is manufactured without consuming a large amount of time and cost, and the manufacturing cost is reduced. Further, size miniaturization can be achieved by a thinning process. In addition, if the inductance coil benefit needs to be further increased, the conductive wires can be stacked in a wire stacking manner, and compared with a manufacturing process manner for forming a substrate/redistribution layer, the method has the advantages of low cost, good inductance benefit and the like.

Description

Inductance structure

Technical Field

The application relates to the technical field of semiconductors, in particular to an inductance structure.

Background

At present, the inductance structure is mainly formed by arranging a magnetic conductive material body on a Substrate (Substrate)/redistribution layer (RDL) and then surrounding an inductance coil, and the benefit of the inductance coil is increased by using the magnetic conductive material body. However, the substrate/redistribution layer is expensive because it requires many materials and many processes. In addition, the use of the substrate makes it impossible to thin the entire structure to achieve size miniaturization.

SUMMERY OF THE UTILITY MODEL

The application provides an inductor structure which is used for reducing the manufacturing cost and realizing the miniaturization of the size.

The application provides an inductance structure, includes:

a first liner;

a second liner;

a magnetizer positioned between the first pad and the second pad;

an upper inductor lead including a first pad connected to the first pad and a second pad connected to the second pad;

a lower inductive wire electrically connecting the first pad and the second pad, the lower inductive wire not including a seed layer.

In some optional embodiments, the inductive structure further comprises:

a third pad electrically connected to the first pad;

a fourth pad electrically connected to the second pad;

the lower inductor conductive line includes a third pad connected to the third pad and a fourth pad connected to the fourth pad.

In some alternative embodiments, the third pad is directly bonded to the first pad.

In some alternative embodiments, the third pad is bonded to the first pad by a solder mass.

In some optional embodiments, the inductive structure further comprises:

the first packaging body is provided with a convex part, the convex part is positioned between the upper inductance lead and the lower inductance lead, and the magnetizer is positioned in the convex part.

In some alternative embodiments, the first package body encapsulates the first pad, the second pad, and the upper inductor lead; and

the inductance structure further includes:

and the second packaging body wraps the lower inductance lead.

In some optional embodiments, an upper surface of the first package body exposes first filling particles, the first filling particles include a cut surface, a lower surface of the second package body exposes second filling particles, and the second filling particles include a cut surface.

In some alternative embodiments, the height of the upper surface of the first liner is greater than the height of the bottom surface of the magnetic conductor.

In some alternative embodiments, an upper surface of the third liner is substantially flush with a bottom surface of the magnetic conductor.

In some alternative embodiments, the third pad is electrically connected to the first pad and the fourth pad is electrically connected to the second pad.

In some optional embodiments, the inductive structure further comprises:

a second lower inductor lead surrounding an outer side of the lower inductor lead.

According to the inductance structure, the lower inductance lead is formed by utilizing the wire bond (wire bond) to replace a substrate/redistribution layer in the inductance structure, so that the substrate/redistribution layer is manufactured without consuming a large amount of time and cost, and the manufacturing cost is reduced. Further, size miniaturization can be achieved by a thinning process. In addition, if the inductance coil efficiency needs to be further increased, the wires can be stacked by a wire stacking method, so that compared with a manufacturing method for forming a substrate/redistribution layer, the method has the advantages of low cost, good inductance efficiency and the like.

Drawings

Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:

fig. 1 to 7 are schematic structural diagrams of a first embodiment to a seventh embodiment of an inductor structure according to the present application;

FIG. 8 is a graph of inductance value versus frequency for an inductor structure according to various embodiments of the present application;

fig. 9-15 are schematic structural diagrams during the fabrication of one embodiment of an inductor structure according to the present application;

fig. 16-22 are schematic structural diagrams during the fabrication of yet another embodiment of an inductive structure according to the present application;

fig. 23 to 27 are schematic structural views in the manufacturing process of the lower side structure in the inductance structure shown in fig. 4.

Description of the symbols:

1-a first pad, 2-a second pad, 3-a magnetizer, 4-an upper inductance lead, 41-a first solder point, 42-a second solder point, 43-a second upper inductance lead, 5-a lower inductance lead, 51-a third solder point, 52-a fourth solder point, 6-a third pad, 7-a fourth pad, 8-a first package, 81-a convex portion, 9-a second package, 10-a second lower inductance lead, 11-a first conductive post, 111-an opening, 12-a second conductive post, 13-a solder block, 14-a carrier, 141-a concave portion, 15-a protective layer, 151-a first protective layer, 152-a second protective layer, 16-a second carrier.

Detailed Description

The following description of the embodiments of the present application will be provided in conjunction with the accompanying drawings and examples, and those skilled in the art can easily understand the technical problems and effects that the present application solves and provides by the contents of the present specification. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the invention. In addition, for convenience of description, only portions related to the related utility model are shown in the drawings.

It should be noted that the structures, proportions, sizes, and other elements shown in the drawings are only used for understanding and reading the contents of the specification, and are not used for limiting the conditions under which the present application can be implemented, so they do not have the technical significance, and any structural modifications, changes in proportion, or adjustments of sizes, which do not affect the efficacy and achievement of the purposes of the present application, shall still fall within the scope of the technical content disclosed in the present application. In addition, the terms "above", "first", "second" and "a" as used herein are for the sake of clarity only, and are not intended to limit the scope of the present application, and changes or modifications of the relative relationship may be made without substantial technical changes.

It should be further noted that, in the embodiments of the present application, the corresponding longitudinal section may be a front view direction section, the transverse section may be a right view direction section, and the horizontal section may be a top view direction section.

It should be readily understood that the meaning of "in.. On," "over,", and "above" in this application should be interpreted in the broadest sense such that "in.. On" not only means "directly on something," but also means "on something" including an intermediate member or layer between the two.

Furthermore, spatially relative terms, such as "below," "lower," "over," "upper," and the like, may be used herein for ease of description to describe one element or component's relationship to another element or component as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 or at other orientations) and the spatially relative descriptors used in this application interpreted accordingly as such.

In addition, the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

As shown in fig. 1, the inductor structure includes a first pad 1, a second pad 2, a magnetizer 3, an upper inductor conductive line 4 and a lower inductor conductive line 5. Wherein the magnetizer 3 is positioned between the first liner 1 and the second liner 2. The upper inductor conductor 4 comprises a first pad 41 connected to the first pad 1 and a second pad 42 connected to the second pad 2. The lower inductor conductor 5 electrically connects the first pad 1 and the second pad 2.

In the present embodiment, the lower inductance wiring 5 may not include the seed layer. This is because the lower inductance wiring 5 is formed in a wire bond (wire bond) manner without a TSV (through silicon via) process for interconnecting a plurality of layers of wires, and thus a seed layer for providing plating assurance in the TSV process is not required. The lower inductance lead is formed by wire bonding (wire bond) to replace the substrate/redistribution layer in the inductance structure, so that the substrate/redistribution layer is not required to be manufactured with a large amount of time and cost, and the manufacturing cost is reduced.

In the present embodiment, the magnetic conductor 3 may be made of metal such as iron, nickel, or cobalt.

In one embodiment, the inductive structure may further comprise a third pad 6 and a fourth pad 7. Wherein the third pad 6 is electrically connected to the first pad 1. The fourth pad 7 is electrically connected to the second pad 2. The lower inductor conductor 5 may further include a third pad 51 connected to the third pad 6 and a fourth pad 52 connected to the fourth pad 7.

In one embodiment, the inductance structure may further include first and second conductive pillars 11 and 12 for signal input and output. In one case, the first conductive pillars 11 and the second conductive pillars 12 may be located at opposite sides. For example, as shown in fig. 1, the first conductive pillar 11 may be electrically connected to the first pad 1. The second conductive pillar 12 may be electrically connected with the fourth pad 7. In another case, the first conductive pillars 11 may be located on the same side as the second conductive pillars 12. For example, as shown in fig. 2, the first conductive pillar 11 may be electrically connected to the first pad 1. The second conductive pillar 12 may be electrically connected with the second pad 2. The first conductive pillar 11 and the second conductive pillar 12 can be disposed on the same side, which is beneficial to improving the thinning degree of the opposite side structure and realizing the miniaturization of the structure size.

In one embodiment, there may be a plurality of connections between the first gasket 1 and the third gasket 6/the second gasket 2 and the fourth gasket 7.

In one case, the third pad 6 may be bonded to the first pad 1 by a solder mass 13, as shown in fig. 1 and 2. The fourth pad 7 may be bonded to the second pad 2 by a solder mass 13. Whereby the bonding strength between the pads can be enhanced by the solder mass 13.

In another case, as shown in fig. 3A, 3B and 3C, the third gasket 6 may be directly bonded to the first gasket 1. The fourth gasket 7 may be directly bonded to the second gasket 2. Therein, the first pad 1/the second pad 2 may comprise pads (lands) and/or Via structures (e.g. vias Via). Specifically, a metal-to-metal connection mode can be adopted between the third gasket 6 and the first gasket 1/the fourth gasket 7 and the second gasket 2. The metal-to-metal connection method may be, for example, a single metal-to-metal connection method such as copper-to-copper (Cu — Cu), silver-to-silver (Ag — Ag), or gold-to-gold (Au — Au), or a metal-to-metal connection method involving two different metals such as copper-to-gold (Cu — Au), copper-to-silver (Cu — Ag), or gold-to-silver (Au — Ag). Here, the metal-to-metal connection may have an advantage of avoiding the use of a solder material or the formation of intermetallic compounds (IMCs).

In addition, the semiconductor package structure shown in fig. 3A, 3B and 3C may further include a protection layer 15. The protective layer 15 may cover the second gasket 2 for protecting the second gasket 2. The protective layer 15 may be made of a dielectric material. The difference is that the first package 8 in the structure of fig. 3A covers the magnetizer 3, and the protection layer 15 in the structures of fig. 3B and 3C also covers the magnetizer 3.

In addition, the protective layer 15 in the semiconductor package structure as shown in fig. 3C may include a first protective layer 151 and a second protective layer 152. The first protection layer 151 may be made of, for example, polyimide (PI) for supporting Via structures (e.g., via holes Via) in the first pad 1/the second pad 2. The second protective layer 152 may use, for example, a filler or a dielectric material for protecting the pads (pads) in the first pad 1/the second pad 2.

In one embodiment, the third pad 51 may be electrically connected to the first pad 1. The fourth pad 52 may be electrically connected to the second pad 2. For example, as shown in fig. 1 and 2, the third pads 51 may be electrically connected to the first pads 1 through the third pads 6 and the solder bumps 13 in this order. The fourth solder 52 can electrically connect the second pad 2 through the fourth pad 7 and the solder bump 13 in that order. For another example, as shown in fig. 3A and 3B, the third pad 51 may be electrically connected to the first pad 1 only through the third pad 6. The fourth pad 52 may be electrically connected to the second pad 2 only through the fourth pad 7.

As shown in fig. 1, in one embodiment, the inductor structure may further include a first package 8 and a second package 9. The first package 8 may have a convex portion 81. The convex portion 81 may be located between the upper and lower inductor conductive lines 4 and 5. The magnetizer 3 is positioned inside the convex portion 81. The first package 8 may cover the first pad 1, the second pad 2, and the upper inductor lead 4. The second package 9 may cover the lower inductor conductive line 5.

Here, the first and second packages 8 and 9 may be formed of various Molding compounds (Molding compounds). For example, the molding material may include Epoxy resin (Epoxy resin), filler (Filler), catalyst (Catalyst), pigment (Pigment), release Agent (Release Agent), flame Retardant (Flame Retardant), coupling Agent (Coupling Agent), hardener (hardner), low Stress absorbent (Low Stress Absorber), adhesion Promoter (Adhesion Promoter), ion trap (Ion Trapping Agent), and the like.

In one embodiment, the upper surface of the first package body 8 may expose the first filling particles. The first filler particles may comprise a tangent plane. The lower surface of the second package body 9 may expose the second filling particles. The second filler particles may comprise a cut surface. Here, since the first package 8 and the second package 9 are thinned (e.g., by grinding) during the manufacturing process, the filling particles on the surfaces of the first package 8 and the second package 9 are in a cut-off shape.

In one embodiment, the magnetic conductor 3 is located in the protrusion 81 of the first package 8. And the height of the upper surface of the first gasket 1 may be greater than the height of the bottom surface of the magnetic conductor 3. From overall structure's perspective, make magnetizer 3 be located overall structure's central point on the one hand, can let overall structure more balanced stable. On the other hand, if the position of the magnetizer 3 is set up close to the upper position, the position of the upper inductor lead 4 is set up along with the upper inductor lead in order to avoid the magnetizer 3, which is not beneficial to the thinning of the upper structure and leads to the oversize of the whole structure, therefore, the magnetizer 3 is located at the central position of the whole structure, which is beneficial to realizing the size miniaturization.

In one embodiment, the upper surface of the third liner 6 may be substantially flush with the bottom surface of the magnetic conductor 3. Alternatively, the upper surface of the second package 9 is substantially flush with the bottom surface of the magnetic conductor 3. In the manufacturing process, the magnetizer 3 is first disposed in the protrusion 81 of the first package 8, and then the protrusion 81 of the first package 8 is contacted and connected with the second package 9. Thus presenting the feature that the upper surface of the third gasket 6 may be substantially flush with the bottom surface of the magnetic conductor 3/the upper surface of the second package 9 is substantially flush with the bottom surface of the magnetic conductor 3. From the viewpoint of the manufacturing process, it is only necessary to provide the protrusion 81 for accommodating the magnetic conductor 3 in the first package 8, and it is not necessary to provide the recess for accommodating the magnetic conductor 3 in the second package 9, so that the manufacturing cost can be reduced, and the size can be further miniaturized.

In one embodiment, as shown in fig. 4 and 5, a single conductive layer may be used as the lower inductor conductive line 5 in the second package 9. Compared with routing, the position of the single-layer conducting layer is easier to control, namely the position of the single-layer conducting layer can be closer to the position of the single-layer conducting layer, so that the thinning degree of the lower side structure is improved, and the miniaturization of the whole structure size is realized. In addition, thinning is realized, and a TSV (through silicon via) process for interconnecting multilayer lines in a substrate/redistribution layer is not needed, so that the manufacturing cost is reduced. Further, as shown in fig. 4 and 5, by disposing the first conductive pillar 11 and the second conductive pillar 12 on the same side, the thinning degree of the structure on the opposite side can be further improved.

In one embodiment, as shown in fig. 6, the inductive structure may comprise at least two magnetic conductors 3. This approach can be used to achieve high inductance applications by increasing the number of magnetic conductors 3.

In one embodiment, as shown in fig. 7, the inductor structure may further include a second lower inductor conductive line 10. A second lower inductor lead 10 may be wound around the outside of the lower inductor lead 5. Further, the inductor structure may further include a second upper inductor conductive line 43. A second upper inductor wire 43 may be wound around the outside of the upper inductor wire 4. This way, the stacking of the plurality of second lower inductor leads 10 and the plurality of second upper inductor leads 43 can be utilized to increase the efficiency of the inductor coil, and the number of turns of the coil can be increased by using the high and low inductor leads to achieve high inductance value application.

Fig. 8 is a graph of inductance value versus frequency for an inductor structure according to various embodiments of the present application. Curve a in fig. 8 shows the relationship between the inductance value and the frequency of the inductance structure of the first embodiment. Curve B shows the relationship between the inductance value and the frequency of the inductance structure of the second embodiment. Curve C shows the relationship between the inductance value and the frequency of the inductance structure of the third embodiment. The first embodiment is an inductance structure of one turn of inductance leads (one layer of upper inductance lead 4 and lower inductance lead 5), the second embodiment is an inductance structure of two turns of inductance leads (two layers of upper inductance lead 4 and lower inductance lead 5), and the third embodiment is an inductance structure of three turns of inductance leads (three layers of upper inductance lead 4 and lower inductance lead 5).

As can be seen from fig. 8, the inductance structure provided by the present application has a relatively wide range of inductance elasticity, that is, the inductance structure provided by the present application can produce a relatively wide range of inductance values in a relatively small size, and the required inductance value can be selected according to the requirement, so that the applicable range is relatively wide. For example, an inductor structure with a lower inductance can be used for filtering, and an inductor structure with a higher inductance can be used for components with high power requirements.

In addition, the whole size of the inductance structure that this application provided is less. For example, if an inductance of 800nH is to be achieved, the smallest achievable size of the conventional inductor structure is 2 × 1-2 mm. The inductor structure provided by the application can reach the size of 1 × 0.3-0.5 mm. Therefore, the inductor structure provided by the application can realize size miniaturization.

Fig. 9-15 are schematic structural diagrams during the fabrication of one embodiment of an inductor structure according to the present application.

As shown in fig. 9, a carrier 14 is provided, and a first pad 1 and a second pad 2 are formed on the carrier 14. A recess 141 is formed in the carrier 14, and the magnetic conductor 3 is placed in the recess 141.

As shown in fig. 10, a first pad 41, an upper inductor wire 4 and a second pad 42 are formed on the first pad 1 and the second pad 2 by wire bonding.

As shown in fig. 11, the first package 8 is formed on the carrier 14 to fill the concave portion 141 to form the convex portion 81 covering the magnetizer 3. Next, an opening 111 communicating with the first pad 1 is formed in the first package 8.

As shown in fig. 12, a conductive material is filled into the opening 111 to form the first conductive pillar 11.

As shown in fig. 13, the carrier 14 is removed.

As shown in fig. 14, the above process is repeated to sequentially form a third pad 6, a fourth pad 7, a lower inductor conductive trace 5, a second package 9, and a second conductive pillar 12 connected to the fourth pad 7 on another carrier (not shown).

As shown in fig. 15, the structure of fig. 13 is bonded to the structure of fig. 14 using solder bumps 13. The inductor structure shown in fig. 15 is obtained.

Fig. 16-22 are schematic structural diagrams during the fabrication of yet another embodiment of an inductor structure according to the present application.

As shown in fig. 16, a carrier 14 is provided, and two pairs of first pads 1 and second pads 2 are formed on the carrier 14. Two recesses 141 are formed in the carrier 14, and two magnetizers 3 are respectively placed in the two recesses 141 (only one is labeled in the figure).

As shown in fig. 17, a first pad 41, an upper inductor wire 4, and a second pad 42 are formed on the first pad 1 and the second pad 2 by wire bonding.

As shown in fig. 18, the first package 8 is formed on the carrier 14 to fill the concave portion 141 to form the convex portion 81 covering the magnetizer 3. Next, an opening 111 for connecting the first pad 1 is formed on the first package body 8.

As shown in fig. 19, a conductive material is filled into the opening 111 to form the first conductive pillar 11.

As shown in fig. 20, the carrier 14 is removed.

As shown in fig. 21, the above processes are repeated to sequentially form a third pad 6, a fourth pad 7, a lower inductor conductive trace 5, a second package 9, and a second conductive pillar 12 connected to one of the fourth pads 7 on another carrier (not shown).

As shown in fig. 22, the structure of fig. 20 is bonded to the structure of fig. 21 using solder bumps 13. The inductor structure shown in fig. 15 is obtained.

Fig. 23 to 27 are schematic structural views in the manufacturing process of the lower side structure in the inductance structure shown in fig. 4.

As shown in fig. 23, a carrier 14 is provided.

As shown in fig. 24, the third pad 6, the fourth pad 7 and the lower inductance leads 5 are integrally formed by, for example, a plating process.

As shown in fig. 25, a portion of the second package 9 is formed to cover the third pad 6, the fourth pad 7, and the lower inductor lead 5.

As shown in fig. 26, the carrier 14 is removed.

As shown in fig. 27, a part of the second package 9 is formed again, resulting in the lower side structure in the inductor structure shown in fig. 4.

The method for manufacturing the inductor structure in this embodiment can achieve the similar technical effects as the inductor structure, and is not described herein again.

While the present application has been described and illustrated with reference to particular embodiments thereof, these descriptions and illustrations do not limit the present application. It will be clearly understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof within the embodiments without departing from the true spirit and scope of the present application as defined by the appended claims. The illustrations may not be drawn to scale. There may be a difference between the technical reproduction in the present application and the actual device due to variables in the manufacturing process and the like. There may be other embodiments of the application that are not specifically illustrated. The specification and drawings are to be regarded in an illustrative rather than a restrictive sense. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present application. All such modifications are intended to fall within the scope of the claims appended hereto. Although the methods disclosed herein have been described with reference to particular operations performed in a particular order, it should be understood that these operations may be combined, sub-divided, or reordered to form equivalent methods without departing from the teachings of the present application. Accordingly, unless specifically indicated herein, the order and grouping of the operations is not a limitation of the present application.

Claims (10)

1. An inductor structure, comprising:

a first liner;

a second liner;

a magnetizer positioned between the first pad and the second pad;

an upper inductor lead including a first pad connected to the first pad and a second pad connected to the second pad;

a lower inductive wire electrically connecting the first pad and the second pad, the lower inductive wire not including a seed layer.

2. The inductive structure of claim 1, further comprising:

a third pad electrically connected to the first pad;

a fourth pad electrically connected to the second pad;

the lower inductor conductive line includes a third pad connected to the third pad and a fourth pad connected to the fourth pad.

3. The inductive structure of claim 2, wherein said third pad is directly bonded to said first pad.

4. The inductive structure of claim 2, wherein said third pad is bonded to said first pad by a solder bump.

5. The inductive structure of claim 1, further comprising:

the first packaging body is provided with a convex part, the convex part is positioned between the upper inductance lead and the lower inductance lead, and the magnetizer is positioned in the convex part.

6. The inductor structure of claim 5, wherein the first package encapsulates the first pad, the second pad, and the upper inductor lead; and

the inductance structure further includes:

and the second packaging body wraps the lower inductance lead.

7. The inductor structure of claim 6, wherein the top surface of the first package body exposes first filler particles, the first filler particles comprise cut surfaces, the bottom surface of the second package body exposes second filler particles, and the second filler particles comprise cut surfaces.

8. The inductive structure of claim 1, wherein a height of an upper surface of said first liner is greater than a height of a bottom surface of said magnetic conductor.

9. The inductive structure of claim 2, wherein an upper surface of said third liner is substantially flush with a bottom surface of said magnetic conductor.

10. The inductive structure of claim 1, further comprising:

a second lower inductor lead surrounding an outer side of the lower inductor lead.

Images