CN218383659U - Substrate for manufacturing fine line pattern - Google Patents

Substrate for manufacturing fine line pattern Download PDF

Info

Publication number
CN218383659U
CN218383659U CN202222370695.5U CN202222370695U CN218383659U CN 218383659 U CN218383659 U CN 218383659U CN 202222370695 U CN202222370695 U CN 202222370695U CN 218383659 U CN218383659 U CN 218383659U
Authority
CN
China
Prior art keywords
substrate
laser
pattern
laser equipment
fine line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202222370695.5U
Other languages
Chinese (zh)
Inventor
吴德生
李志成
钟小悦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Truly Opto Electronics Ltd
Original Assignee
Truly Opto Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Opto Electronics Ltd filed Critical Truly Opto Electronics Ltd
Priority to CN202222370695.5U priority Critical patent/CN218383659U/en
Application granted granted Critical
Publication of CN218383659U publication Critical patent/CN218383659U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The utility model belongs to the technical field of the meticulous lines of electronic circuit, a base plate of preparation meticulous line pattern is related to, including processing base plate, pattern template, rubber coating and laser equipment, the fixed pattern template that is equipped with of top surface of processing base plate, the fixed rubber coating that is equipped with of top surface of pattern template, the top on rubber coating is equipped with laser equipment, laser equipment is connected with external drive equipment. The utility model discloses based on the mode of general exposure demonstration etching preparation electronic circuit fine line pattern, the mode that shines through laser equipment replaces the mode of exposure, start laser equipment through external equipment, make laser equipment shine the photoresist, thereby form fine line pattern, under the condition of the meticulous degree of the meticulous line of facula size control that conveniently passes through laser equipment, laser equipment shines shaping efficiency and is higher than the exposure mode, thereby avoid exposure time overlength or the quality of the meticulous line pattern that the short influence was made to a certain extent.

Description

Substrate for manufacturing fine line pattern
Technical Field
The utility model relates to a meticulous lines technical field of electronic circuit, concretely relates to base plate of preparation meticulous line pattern.
Background
The electronic industry is a high-precision industry, and the width of an electronic circuit reaches the micron level or even the nanometer level. The finer the line, the higher the integration level when applied to the chip industry; the application to the display industry represents the finer and more delicate display, so that how to make fine lines is very important.
In the patent document with publication number CN110989292A, a method for preparing fine texture on a substrate is provided, which comprises cleaning the substrate, drying, coating photoresist on the corresponding surface of the substrate, baking the coated substrate until the solvent in the photoresist is completely volatilized, and standing to allow the photoresist and the substrate to be oxidized and linked; placing the substrate attached with the photoresist on a workbench of an exposure machine for exposure; the exposed substrate is sent into a developing machine for developing, the substrate with the moisture dried is taken out, and then the substrate is kept stand to enable the photoresist and the substrate to be oxidized and linked; wet etching the developed substrate, etching the substrate without photoresist protection by using an etching solution, taking out the substrate and rinsing, and leaving a photoresist protection texture pattern on the substrate; and removing the photoresist on the etched substrate to leave fine textures on the substrate. The scheme adopts wet etching, the fine texture of the substrate is manufactured in an exposure, development and etching mode, the process is simple and reasonable, the realization is easy, the environment is protected, the method is suitable for manufacturing fine textures with the grain size of 10 mu m or less, and the processing efficiency and the finished product yield are high.
The method for manufacturing the fine texture of the substrate by the exposure, development and etching is similar to the manufacturing process of the fine line of the conventional electronic circuit, the fine line is obtained by coating photoresist on the template of the substrate and then exposing and developing, but the pattern manufacturing of the fine line of the conventional electronic circuit adopts the exposure mode, but the exposure mode needs operators to strictly manage the exposure time, the quality of the template pattern after subsequent developing and etching is easily influenced by too long or too short exposure time, the processing process is relatively difficult, and therefore the fine line pattern of the electronic circuit needs to be manufactured by a simple processing mode.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the embodiment of the application is that when a fine line pattern of an electronic circuit is manufactured, the pattern quality of the manufactured fine line is easily influenced by the exposure duration by adopting an exposure, development and etching mode.
In order to solve the technical problem, the embodiment of the application provides a base plate of fine lines pattern of preparation, including processing base plate, pattern template, rubber coating and laser equipment, the fixed pattern template that is equipped with of top surface of processing base plate, the fixed rubber coating that is equipped with of top surface of pattern template, the top on rubber coating is equipped with laser equipment, laser equipment is connected with external drive equipment.
As the preferable improvement mode of the substrate for manufacturing the fine line pattern, a processing groove is formed in the top surface of the processing substrate, and the pattern template is fixed on the inner side of the processing groove.
As the substrate optimization improvement mode for manufacturing the fine line patterns, the laser pattern is arranged on the glue coating layer and is located under the laser equipment.
As the preferable improvement mode of the substrate for manufacturing the fine line pattern, the material of the glue coating layer is photoresist.
As a preferable improvement mode of the substrate for manufacturing the fine line pattern, the distance from the top surface of the glue coating layer to the bottom surface of the inner side of the processing groove is smaller than the depth of the processing groove; this scheme is less than the degree of depth of settling under the condition of the pattern template of processing inslot side and the thickness of rubber coating at the processing groove for when shining the back through laser equipment and carry out the acid-etched development, can collect the acidizing fluid and dissolve in the processing inslot, avoid the condition of inconvenient control acid-etched solution flow direction, improve the convenience of technology operation.
The preferred improvement mode of base plate as the fine lines pattern of preparation that this application provided, the inboard of laser pattern is equipped with fine lines, fine lines is fixed in the processing inslot, fine lines is located laser equipment under.
As a preferable improvement of the substrate for manufacturing the fine line pattern provided by the application, the laser system used by the laser device is ultraviolet laser with the wavelength of 355 nm.
As an improved preferred mode for manufacturing a substrate with fine line patterns, the laser device adopts a high-speed galvanometer system; the high-speed mirror system that shakes that laser equipment of this scheme adopted can make laser equipment's work efficiency very big promotion.
As a preferable improvement of the substrate for manufacturing the fine line pattern provided by the present application, the power of the laser device is 5 to 15W; this scheme replaces the mode of exposure through the mode that laser equipment shines the rubber coating, start laser equipment through external equipment, make laser equipment shine the photoresist, shine out required pattern after, ultraviolet laser makes the photoresist cross-link under photoinitiator's effect, form the pattern of meticulous lines, develop through the mode of acid etching, make the acid etching will not be shone, the photoresist of reaction dissolves, thereby obtain the meticulous line pattern of needs, under the condition of the meticulous degree of the meticulous line of facula size control of convenient through laser equipment, laser equipment shines the shaping efficiency and is higher than the exposure mode, thereby avoid exposure time overlength or the quality of the meticulous line pattern of short influence making to a certain extent.
As a preferable improvement of the substrate for manufacturing a fine line pattern provided by the present application, the fine line is a fine pattern of an electronic circuit.
Compared with the prior art, the embodiment of the application mainly has the following beneficial effects:
1. the utility model discloses in the in-process of using, through being provided with processing base plate and laser equipment, show the mode of etching preparation electronic circuit fine lines pattern based on general exposure, this scheme sets up the processing groove on processing the base plate, the inboard of processing groove is plated with the pattern template, scribble the mode of a layer photoresist rubber coating (photoresist is one of the key material of micro-fine figure processing in the microelectronic technology, especially the development of large-scale and super large-scale integrated circuit in recent years, the research development and the application of photoresist have been promoted greatly, photoresist is an organic compound, it is exposed by ultraviolet light, the solubility in the developing solution can change, photoresist used in silicon chip manufacturing scribbles silicon chip surface with the liquid, then dried to the glued membrane, the printing industry is another important field that the photoresist was used, the pattern that will process is input external control equipment when processing, then start laser equipment through external equipment, make laser equipment shine the photoresist, after shining required pattern, ultraviolet laser makes the photoresist cross-link under photoinitiator effect (cross-linking and degradation are two kinds of states, according to its chemical reaction principle and negative type of photoresist and developing substance can not form after the positive type of developing substance; on the contrary, the photoresist in the scheme adopts polyvinyl alcohol laurate and the like as photosensitive materials, double bonds in molecules of the photoresist are opened under the action of light, and the chains are crosslinked to form an insoluble reticular structure to play a role of corrosion resistance, and the insoluble reticular structure is a typical negative photoresist), after shining the pattern of meticulous lines through laser equipment, develop through the mode of acid etching, make acid etching will not be illuminated, the photoresist of reaction dissolves, thereby reachs the meticulous line pattern of needs, afterwards with meticulous lines carry out the drawing of patterns can, the mode that this scheme shines through laser equipment replaces the mode of exposure, under the condition of the meticulous degree of the meticulous line of facula size control of convenient through laser equipment, laser equipment shines the shaping efficiency and is higher than the exposure mode, thereby avoid exposure time overlength or the quality of the meticulous line pattern that the too short influence was made to a certain extent.
2. The utility model discloses at the in-process that uses, through being provided with the processing groove, based on general processing base plate, the processing groove is seted up to this scheme on the processing base plate for the degree of depth of processing groove is less than the thickness of settling at the inboard pattern template of processing groove and rubber coating, makes when shining the back through laser equipment and carry out the acid etching and develop, can collect the acidizing fluid and dissolve in the processing groove, avoids the condition of inconvenient control acid etching solution flow direction, improves the convenience of technology operation.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a substrate for manufacturing fine line patterns according to the present invention before processing;
fig. 2 is an enlarged schematic view of a position a in fig. 1 of a substrate for manufacturing a fine line pattern according to the present invention;
fig. 3 is a schematic view of a processing process of a substrate for manufacturing fine line patterns according to the present invention;
fig. 4 is a schematic view of the processing completion of the substrate for manufacturing fine line patterns according to the present invention;
fig. 5 is a processing flow chart of the substrate for manufacturing fine line patterns according to the present invention.
Reference numerals: 1. processing the substrate; 11. processing a tank; 2. a pattern template; 3. gluing layers; 31. laser patterning; 4. a laser device; 5. fine lines.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
Embodiments of a substrate for fabricating fine line patterns
Example one
The utility model provides a following technical scheme: the utility model provides a base plate of preparation fine lines pattern, is including processing base plate 1, pattern template 2, rubber coating 3 and laser equipment 4, and the fixed pattern template 2 that is equipped with of top surface of processing base plate 1, the fixed rubber coating 3 that is equipped with of top surface of pattern template 2, and the top of rubber coating 3 is equipped with laser equipment 4, and laser equipment 4 is connected with external drive equipment.
Referring to fig. 3, 4 and 5, specifically, a processing groove 11 is formed in the top surface of the processing substrate 1, and the pattern template 2 is fixed inside the processing groove 11; the glue coating layer 3 is provided with a laser pattern 31, and the laser pattern 31 is positioned right below the laser device 4; the glue coating layer 3 is made of photoresist; the distance from the top surface of the glue coating layer 3 to the bottom surface of the inner side of the processing tank 11 is less than the depth of the processing tank 11; the inner side of the laser pattern 31 is provided with a fine line 5, the fine line 5 is fixed in the processing groove 11, and the fine line 5 is positioned right below the laser device 4; the laser system used by the laser device 4 is ultraviolet laser with the wavelength of 355 nm; the laser device 4 adopts a high-speed galvanometer system; the power of the laser device 4 is 5-15W; the fine lines 5 are fine patterns of electronic circuits; the scheme is based on a general mode of manufacturing fine lines 5 of an electronic circuit by exposure display etching, a processing groove 11 is arranged on a processing substrate 1, a pattern template 2 is plated on the inner side of the processing groove 11, a photoresist glue coating layer 3 is coated on the top surface of the pattern template 2 (photoresist is one of key materials for processing micro-patterns in the microelectronic technology, particularly the development of large-scale and super-large-scale integrated circuits in recent years, the research development and application of the photoresist are greatly promoted, the photoresist is an organic compound, the solubility of the photoresist in a developing solution can be changed after the photoresist is exposed by ultraviolet light, the photoresist used in the silicon wafer manufacturing is coated on the surface of a silicon wafer in a liquid state and then is dried into a glue film, and the printing industry is another important field of photoresist application).
Example two
When a pattern needing to be processed is input into external control equipment during processing, then the laser equipment 4 is started through the external equipment, so that the laser equipment 4 irradiates photoresist, after the required pattern is irradiated, ultraviolet laser enables the photoresist to be crosslinked under the action of a photoinitiator (crosslinking and degradation are two states of the photoresist, and the photoresist can be divided into a negative photoresist and a positive photoresist according to a chemical reaction mechanism and a development principle, the photoresist can be divided into the negative photoresist and the positive photoresist, wherein insoluble substances are formed after illumination, conversely, some solvents are insoluble and become soluble substances after illumination, namely the positive photoresist, the photoresist in the scheme adopts polyvinyl alcohol laurate and the like as photosensitive materials, double bonds in molecules are opened under the action of light, and the chains are crosslinked to form an insoluble net structure to play a corrosion resistance role, which is a typical negative photoresist, after the pattern of fine lines 5 is irradiated through the laser equipment 4, the photoresist is developed in an acid etching mode, so that the photoresist which is not irradiated and reacted by the acid is dissolved, the required fine lines 5 are obtained, the pattern of the fine lines 5 is irradiated through the laser equipment, the fine lines 5, the laser equipment can be conveniently formed by a high-exposure efficiency mode, and the laser equipment can be conveniently controlled by using a short laser exposure mode, so that the fine lines 5 can be formed by the laser equipment, and the fine lines 5, and the pattern forming process can be conveniently.
EXAMPLE III
Referring to fig. 1 and 2, in particular, based on the first embodiment, a processing tank 11 is formed on a processing substrate 1, so that the depth of the processing tank 11 is smaller than the thicknesses of a pattern template 2 and a glue coating layer 3 which are arranged inside the processing tank 11, and when acid etching development is performed after irradiation by a laser device 4, acid liquid can be collected in the processing tank 11 for dissolution, thereby avoiding inconvenience in controlling the flowing direction of an acid etching solution, and improving the convenience of process operation.
To sum up, the utility model discloses a complete working process and theory of use as follows:
when the scheme is used, firstly, based on a general mode of displaying and etching to manufacture a pattern of an electronic circuit fine line 5 by exposure, a processing groove 11 is arranged on a processing substrate 1, a pattern template 2 is plated on the inner side of the processing groove 11, a photoresist coating layer 3 is coated on the top surface of the pattern template 2, the depth of the processing groove 11 is smaller than the thicknesses of the pattern template 2 and the coating layer 3 which are arranged on the inner side of the processing groove 11, the pattern to be processed is input into external control equipment during processing, then laser equipment 4 is started through the external equipment, so that the photoresist is irradiated by the laser equipment 4, after the required pattern is irradiated, ultraviolet laser enables the photoresist to be crosslinked under the action of a photoinitiator (the crosslinking and degradation are two states of the photoresist, and according to a chemical reaction mechanism and a developing principle, a negative photoresist and a positive photoresist can be separated; on the contrary, the photoresist in the scheme adopts polyvinyl alcohol laurate and the like as photosensitive materials, double bonds in molecules of the photoresist are opened under the action of light, and the chains are crosslinked to form an insoluble net structure which plays a role of corrosion resistance and is a typical negative photoresist, after the pattern of the fine line 5, namely the laser pattern 31, is irradiated by laser equipment 4, acid liquor can be gathered in a processing tank 11 to dissolve the photoresist gluing layer 3 and the pattern template 2, so that the photoresist gluing layer 3 which is not irradiated and reacted by acid etching is dissolved, thereby obtaining the required fine line 5 pattern, and then the fine line 5 is demoulded to obtain the pattern of the fine line 5, according to the scheme, the processing tank 11 is formed in the processing substrate 1, so that the acid liquid can be collected in the processing tank 11 for dissolving, the condition that the flow direction of the acid etching solution is inconvenient to control is avoided, and the convenience of process operation is improved; and the mode of irradiating through the laser equipment 4 replaces the mode of exposing, under the condition of the meticulous degree of the meticulous line 5 of spot size control through the laser equipment 4 of convenience, the laser equipment 4 irradiates the shaping efficiency and is higher than the exposure mode to avoid exposure time overlength or too short to influence the quality of the meticulous line 5 pattern of making to a certain extent.
It is to be understood that the above-described embodiments are merely illustrative of some, but not restrictive, of the broad invention, and that the appended drawings illustrate preferred embodiments of the invention and do not limit the scope of the invention. This application is capable of embodiments in many different forms and is provided for the purpose of enabling a thorough understanding of the disclosure of the application. Although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to one skilled in the art that the present application may be practiced without modification or with equivalents of some of the features described in the foregoing embodiments. All equivalent structures made by using the contents of the specification and the drawings of the present application are directly or indirectly applied to other related technical fields and are within the protection scope of the present application.

Claims (10)

1. The utility model provides a base plate of preparation fine lines pattern, is including processing base plate (1), pattern template (2), rubber coating (3) and laser equipment (4), its characterized in that: the fixed pattern template (2) that are equipped with of top surface of processing base plate (1), the fixed rubber coating layer (3) that are equipped with of top surface of pattern template (2), the top on rubber coating layer (3) is equipped with laser equipment (4), laser equipment (4) are connected with external drive equipment.
2. The substrate for forming fine line patterns according to claim 1, wherein: the top surface of the processing substrate (1) is provided with a processing groove (11), and the pattern template (2) is fixed on the inner side of the processing groove (11).
3. The substrate for manufacturing fine line patterns according to claim 2, wherein: the glue coating layer (3) is provided with laser patterns (31), and the laser patterns (31) are located under the laser equipment (4).
4. The substrate for manufacturing fine line patterns according to claim 3, wherein: the glue coating layer (3) is made of photoresist.
5. The substrate for manufacturing fine line patterns according to claim 4, wherein: the distance from the top surface of the glue coating layer (3) to the bottom surface of the inner side of the processing tank (11) is less than the depth of the processing tank (11).
6. The substrate for forming fine line patterns according to claim 5, wherein: the inner side of the laser pattern (31) is provided with fine lines (5), the fine lines (5) are fixed in the processing groove (11), and the fine lines (5) are located under the laser equipment (4).
7. The substrate for manufacturing fine line patterns according to claim 6, wherein: the laser system used by the laser device (4) is ultraviolet laser with the wavelength of 355 nm.
8. The substrate for manufacturing fine line patterns according to claim 7, wherein: the laser device (4) adopts a high-speed galvanometer system.
9. The substrate for manufacturing fine line patterns according to claim 8, wherein: the power of the laser device (4) is 5-15W.
10. The substrate for forming fine line patterns according to claim 9, wherein: the fine lines (5) are fine patterns of electronic circuits.
CN202222370695.5U 2022-09-05 2022-09-05 Substrate for manufacturing fine line pattern Active CN218383659U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222370695.5U CN218383659U (en) 2022-09-05 2022-09-05 Substrate for manufacturing fine line pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222370695.5U CN218383659U (en) 2022-09-05 2022-09-05 Substrate for manufacturing fine line pattern

Publications (1)

Publication Number Publication Date
CN218383659U true CN218383659U (en) 2023-01-24

Family

ID=84971580

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222370695.5U Active CN218383659U (en) 2022-09-05 2022-09-05 Substrate for manufacturing fine line pattern

Country Status (1)

Country Link
CN (1) CN218383659U (en)

Similar Documents

Publication Publication Date Title
Park et al. Eco-friendly photolithography using water-developable pure silk fibroin
TWI351582B (en) Photoresist
CN1134511C (en) Water soluble resin composition
TWI803344B (en) A Lithography Method Based on Double Layer Photoresist
US20130224322A1 (en) Method For Cleaning Fine Pattern Surface Of Mold, And Imprinting Device Using Same
WO2022127170A1 (en) Large-caliber flexible optical metasurface structure and processing method therefor
CN111606300A (en) Method for manufacturing high aspect ratio nano grating
CN101177079A (en) Method for printing micro contact pattern with hydrogel as template and colloid crystal as writing ink
CN218383659U (en) Substrate for manufacturing fine line pattern
CN111438859A (en) Patterned nano array template and preparation method and application thereof
CN111489864A (en) Cross-ordered silver nanowire thin film and patterning method thereof
CN112038452B (en) Rapid patterning etching method of PEDOT (polyethylene glycol terephthalate): PSS (patterned sapphire substrate) electrode based on ultraviolet lithography process
JP3907519B2 (en) Resist pattern forming method and resist pattern forming apparatus
CN104716043B (en) Graphene field effect transistor with flexible substrates and preparation method thereof
CN106505148A (en) A kind of organic film FET based on laminate patch electrode and preparation method thereof
JPH0367261B2 (en)
KR100676737B1 (en) Positive photosensitive composition
CN109454777A (en) The preparation method of 3D nanometers of textures of multichannel and solid LOGO mold
CN111028987B (en) Nano silver wire conductive film and manufacturing method of nano silver wire conductive film as touch sensor electrode layer
JP6459741B2 (en) Manufacturing method of polarizing element and manufacturing method of display device provided with polarizing element obtained by using the method
CN111896563B (en) Manufacturing method of replica sample for transmission electron microscope detection, gel liquid and application method
JP3120101B2 (en) Manufacturing method of color filter
WO2023246243A1 (en) Ultraviolet photoresist, and ultraviolet photoresist patterning method and use
CN114200797B (en) Mask for splicing and aligning nano-imprint metal grating and metal grating splicing method
CN114433260B (en) Nano-fluidic chip based on nano-cracks and processing method thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant