CN218383510U - Visible light high-transmittance mid-infrared high-reflection type spectroscope - Google Patents
Visible light high-transmittance mid-infrared high-reflection type spectroscope Download PDFInfo
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- CN218383510U CN218383510U CN202222072904.8U CN202222072904U CN218383510U CN 218383510 U CN218383510 U CN 218383510U CN 202222072904 U CN202222072904 U CN 202222072904U CN 218383510 U CN218383510 U CN 218383510U
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Abstract
The utility model discloses a high infrared high reflection-type spectroscope in passing through of visible light, including the basement with plate and establish the multilayer rete on the basement, the multilayer rete is up in proper order for metal oxide rete, metal rete, transition rete and ultra wide band wave-transparent material rete from down, wherein, the refracting index of metal oxide rete is less than or equal to 1.67 at the refracting index of 550nm department, the refracting index of ultra wide band wave-transparent material rete is less than or equal to 2.3 at the refracting index of 800nm department. The utility model discloses a metal oxide rete, metal film layer and transition rete all adopt the electron beam evaporation plating mode of low temperature low speed to plate one by one, and the resistance evaporation or the electron beam evaporation mode of rate plate on the transition rete in the high temperature are adopted to the ultra wide band wave-transparent material rete. The utility model discloses at 42 2 ℃, humidity 95%'s environment in experiment 24h, the deciduous membrane and optical property are stable, are greater than 75% at visible wave band's average transmissivity, and the maximum transmittance is 82%, is greater than 70% at near-infrared wave band average reflectivity, and mid-infrared wave band reflectivity is greater than 92%.
Description
Technical Field
The utility model relates to an optical element especially relates to a high infrared high reflection-type spectroscope in visible light height passes through.
Background
With the development of infrared technology and the deep research on infrared materials, the infrared detection device has stronger and stronger capacities in the aspects of identifying targets, confirming targets, eliminating interference and the like, and is widely applied to various combat weapon platforms such as aircrafts, ships, missile-borne weapons, vehicles and the like, wherein the various combat weapon platforms are not provided with infrared photoelectric (detection) systems. The visible light high-transmittance mid-infrared high-reflection spectroscope can be placed in a system and placed in front of a detector, on one hand, the target can be subjected to image capture through detection of a visible wave band, on the other hand, the target (or the interior of the target) can be further identified through infrared detection, and double identification and verification of the target are realized. However, in a high-temperature and high-humidity environment, the spectroscope has the defects that the film layers are cracked due to the fact that the thermal expansion coefficients of the film layers and the substrate are different, and once the spectroscope is torn, more water vapor can easily penetrate between the film layers and the substrate, so that the film is peeled.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: the utility model aims at providing a high reflection-type spectroscope of infrared in visible light height that is difficult for the deciduate.
The technical scheme is as follows: visible light height passes through mid-infrared high reflection-type spectroscope, including the basement with plate and establish the multilayer rete on the basement, the multilayer rete is down up in proper order for metal oxide rete, metal rete, transition rete and ultra wide band wave-transparent material rete down, wherein, the refracting index of metal oxide rete in 550nm department is less than or equal to 1.67, the refracting index of ultra wide band wave-transparent material rete in 800nm department is less than or equal to 2.3.
Further, the coating area of the metal film layer is smaller than that of the metal oxide film layer, and the transition film layer coats the metal film layer.
Furthermore, the coating areas of the transition film layer and the ultra-wideband wave-transmitting material film layer are the same as the coating area of the metal oxide film layer.
Furthermore, the thickness of the metal oxide film layer is 15nm to 20nm, the thickness of the metal film layer is 10nm to 20nm, the thickness of the transition film layer is 1nm to 3nm, and the thickness of the ultra-wideband wave-transmitting material film layer is 20nm to 45nm.
Furthermore, the metal oxide film layer is an aluminum oxide layer, the metal film layer is a gold layer or a silver layer, the transition film layer is an aluminum oxide layer or a zinc sulfide layer, and the ultra-wideband wave-transmitting material film layer is a zinc sulfide layer or a hafnium oxide layer.
Further, the substrate is an optical glass substrate with spectral transmittance of more than or equal to 80% in the wavelength range of 0.35-2 μm.
Has the advantages that: compared with the prior art, the utility model, have following advantage: 1. the utility model is tested for 24 hours in the environment with the temperature of 42 +/-2 ℃ and the humidity of 95 percent, does not need to be demoulded and has stable optical performance; 2. the utility model can be kept for 1h in the boiling environment, does not peel off the film and has stable optical performance; 3. the utility model has stable optical performance and does not peel off the membrane after the salt spray test; 4. the utility model discloses average transmissivity at visible wave band is greater than 75%, and the maximum transmittance is 82%, is greater than 70% at near infrared wave band average reflectivity, and well infrared wave band reflectivity is greater than 92%.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a graph showing the spectral characteristics of the visible and near infrared bands of the present invention;
fig. 3 shows the middle infrared band spectrum characteristic curve of the present invention.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings.
As shown in fig. 1, high infrared high reflection-type spectroscope in passing through of visible light, including basement 1 and the multilayer rete of establishing on the basement of plating, multilayer rete is metal oxide rete 2, metal rete 3, transition rete 4 and ultra wide band wave-transmitting material rete 5 from up down in proper order, wherein, the refracting index of metal oxide rete 2 is less than or equal to 1.67 at the refracting index of 550nm department, the refracting index of ultra wide band wave-transmitting material rete 5 is less than or equal to 2.3 at the refracting index of 800nm department. The coating area of the metal film layer 3 is smaller than that of the metal oxide film layer 2, the coating areas of the transition film layer 4 and the ultra-wideband wave-transmitting material film layer 5 are the same as that of the metal oxide film layer 2, and the metal film layer 3 is coated between the metal oxide film layer 2 and the transition film layer 4.
Wherein the metal oxide film layer 2 is an aluminum oxide layer, and the thickness of the film layer is 15nm to 20nm; the metal film layer 3 is a gold layer or a silver layer, and the thickness of the film layer is 10nm to 20nm; the transition film layer 4 is an aluminum oxide layer or a zinc sulfide layer, and the thickness of the film layer is 1 to 3nm; the ultra-wideband wave-transmitting material film layer 5 is a zinc sulfide layer or a hafnium oxide layer, and the thickness of the film layer is 20-45 nm. The metal oxide film layer 2, the metal film layer 3 and the transition film layer 4 are plated one by one in a low-temperature and low-speed electron beam evaporation mode, and the ultra-wideband wave-transmitting material film layer 5 is plated on the transition film layer in a high-temperature and medium-speed resistance evaporation or electron beam evaporation mode. The substrate 1 is an optical glass substrate with spectral transmittance of more than or equal to 80% in the wavelength range of 0.35-2 μm.
In the coating process of the utility model, the ion source on the surface of the substrate is pre-cleaned for 3min to 15min before evaporation; the first metal oxide film layer is evaporated by electron beams at low temperature (less than 50 ℃) and low speed (less than 0.4 nm/S); the second metal film layer is evaporated by electron beams at low temperature (less than 50 ℃) and low speed (less than 0.4 nm/S); the third transition film layer is evaporated by electron beams at a low temperature (less than 50 ℃) and a low speed (less than 0.4 nm/S); the ultra-wideband wave-transmitting material film layer of the fourth layer is subjected to resistance evaporation or electron beam evaporation at a medium speed (0.4 nm/S-1 nm/S) at a high temperature (90-200 ℃).
In fig. 2 and 3, the abscissa represents wavelength, the ordinate R represents reflectance, and T represents transmittance. As shown in fig. 2 and 3, the utility model discloses average transmissivity at visible wave band is greater than 75%, and maximum transmissivity is 82%, is greater than 70% at near-infrared wave band average reflectivity, and well infrared wave band reflectivity is greater than 92%.
Claims (6)
1. The utility model provides a high reflection-type spectroscope of mid infrared that passes through of visible light height, includes basement (1) and plates the multilayer rete of establishing on the basement, its characterized in that, multilayer rete is from down up in proper order for metal oxide rete (2), metal rete (3), transition rete (4) and ultra wide band wave-transmitting material rete (5), and wherein, the refracting index of metal oxide rete (2) is less than or equal to 1.67 at the refracting index of 550nm department, and the refracting index of ultra wide band wave-transmitting material rete (5) is less than or equal to 2.3 at the refracting index of 800nm department.
2. A visible light highly-transmitting mid-infrared highly-reflecting beam splitter as claimed in claim 1, wherein the metal film layer (3) has a smaller coating area than the metal oxide film layer (2), and the transition film layer (4) covers the metal film layer (3).
3. The visible light high-transmittance mid-infrared high-reflection spectroscope according to claim 1, wherein the transition film layer (4) and the ultra-wideband wave-transparent material film layer (5) have the same coating area as the metal oxide film layer (2).
4. The visible light highly-transmitting mid-infrared highly-reflective spectroscope according to claim 2, wherein the thickness of the metal oxide film layer (2) is 15nm to 20nm, the thickness of the metal film layer (3) is 10nm to 20nm, the thickness of the transition film layer (4) is 1 to 3nm, and the thickness of the ultra-wideband wave-transmitting material film layer (5) is 20 to 45nm.
5. A visible light highly-transmitting mid-infrared highly-reflective spectroscope according to claim 3, wherein the metal oxide film layer (2) is an aluminum oxide layer, the metal film layer (3) is a gold layer or a silver layer, the transition film layer (4) is an aluminum oxide layer or a zinc sulfide layer, and the ultra-wideband wave-transparent material film layer (5) is a zinc sulfide layer or a hafnium oxide layer.
6. A visible light highly transmitting intermediate infrared highly reflecting spectroscope according to any one of claims 1 to 5, wherein the substrate (1) is an optical glass substrate having a spectral transmittance of 80% or more in a wavelength range of 0.35 μm to 2 μm.
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CN202222072904.8U CN218383510U (en) | 2022-08-08 | 2022-08-08 | Visible light high-transmittance mid-infrared high-reflection type spectroscope |
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CN202222072904.8U CN218383510U (en) | 2022-08-08 | 2022-08-08 | Visible light high-transmittance mid-infrared high-reflection type spectroscope |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116299896A (en) * | 2023-02-17 | 2023-06-23 | 讯芸电子科技(中山)有限公司 | Single-fiber bidirectional 800G integrated optical module with flip structure |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN116299896A (en) * | 2023-02-17 | 2023-06-23 | 讯芸电子科技(中山)有限公司 | Single-fiber bidirectional 800G integrated optical module with flip structure |
CN116299896B (en) * | 2023-02-17 | 2024-04-26 | 讯芸电子科技(中山)有限公司 | Single-fiber bidirectional 800G integrated optical module with flip structure |
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