CN218350425U

CN218350425U - TFT transistor semiconductor layer short circuit testing arrangement

Info

Publication number: CN218350425U
Application number: CN202222089210.5U
Authority: CN
Inventors: 林国强; 李杨; 卢列燕
Original assignee: Shenzhen Haoran Display Co ltd
Current assignee: Shenzhen Haoran Display Co ltd
Priority date: 2022-08-09
Filing date: 2022-08-09
Publication date: 2023-01-20
Anticipated expiration: 2032-08-09

Abstract

The utility model relates to a LCD production technical field, and a TFT transistor semiconductor layer short circuit testing arrangement is disclosed, including the testboard, the fixed plastics box that is equipped with in upper end of testboard, the fixed power supply board that is equipped with in inside of plastics box, be equipped with TFT power supply subassembly on the power supply board, the fixed insulating boot that is equipped with in upper end of plastics box, the through-hole has been seted up to the terminal surface of insulating boot, and the inside sliding connection of through-hole has the switching board, two lateral walls that switch the board are all fixed and are equipped with the insulator spindle, two opposite one ends of insulator spindle are all fixed and are equipped with the adapter plug, two inner walls of insulating boot are all fixed be equipped with the adapter plug for the adapter plug position, two adapter plugs all are connected with the test connector lug, the fixed two TFT mounting panels that are equipped with on the testboard. The application can effectively reduce the time wasted in feeding and discharging the TFT transistor semiconductor layer, improve the overall test efficiency and carry out short-circuit protection at the same time.

Description

TFT transistor semiconductor layer short circuit testing arrangement

Technical Field

The application relates to the technical field of liquid crystal display production, in particular to a TFT transistor semiconductor layer short circuit testing device.

Background

The TFT is a thin film transistor, which means that each liquid crystal pixel on the liquid crystal display is driven by a thin film transistor integrated behind it, so that screen information can be displayed at high speed, high brightness and high contrast.

In the process of implementing the present application, the inventor finds that at least the following problems exist in the technology, after the thin film transistor of the TFT is assembled and produced, in order to ensure that the quality is qualified, tests of various parameters are required, and it is one of the tests that the short circuit is performed, when the short circuit test is performed, the TFT transistor layer is connected to a standard TFT power supply board, and then the current is introduced for testing, but in the actual test process, after one TFT transistor layer is tested, the TFT transistor layer needs to be detached, and after the next TFT transistor layer is installed and connected, the short circuit test of the next TFT transistor can be performed, which results in low overall efficiency and poor test effect.

SUMMERY OF THE UTILITY MODEL

The purpose of this application is in order to solve among the prior art to a TFT transistor layer test accomplish the back, need pull down this TFT transistor layer back to with the installation of next TFT transistor layer and wiring after, just can carry out the short circuit test of next TFT transistor, lead to holistic efficiency on the low side, the not good problem of test effect, and the TFT transistor semiconductor layer short circuit testing arrangement who provides.

In order to achieve the purpose, the following technical scheme is adopted in the application:

the utility model provides a TFT transistor semiconductor layer short circuit testing arrangement, includes the testboard, the fixed plastics box that is equipped with in upper end of testboard, the fixed power supply board that is equipped with in inside of plastics box, be equipped with TFT power supply assembly on the power supply board, the fixed insulating boot that is equipped with in upper end of plastics box, the through-hole has been seted up to the terminal surface of insulating boot, and the inside sliding connection of through-hole has the switching board, two equal fixed insulator spindle that is equipped with, two of two lateral walls of switching board the one end that the insulator spindle is opposite is all fixed and is equipped with the adapter plug, two all fixed adapter plug that is equipped with the adapter plug position for of two inner walls of insulating boot all is connected with the test connector, the fixed two TFT mounting panels that are equipped with on the testboard, the inside of plastics box is equipped with short circuit protection mechanism.

Preferably, short-circuit protection mechanism is including hollow post, the inside activity of hollow post is equipped with the insulation board, the lateral wall of insulation board and the inner wall of hollow post are all fixed and are equipped with the conducting block, two the switching cutting all is connected with one of them conducting block electricity, the fixed insulating barrier that is equipped with in inside of hollow post, insulating barrier's lateral wall sliding connection has the iron core, the tip of iron core and the lateral wall fixed connection of insulation board, it is equipped with first spring jointly to fix between the lateral wall of insulation board and the lateral wall of insulating barrier, the fixed electro-magnet that is connected with the TFT power supply unit that is equipped with of one end inner wall that hollow post is close to the iron core, be equipped with the joint subassembly corresponding with the insulation board position on the hollow post.

Preferably, the TFT power supply assembly includes an AC/DC converter, a DC/DC converter, and a driving board.

Preferably, the side wall of the insulating plate is fixedly provided with a conductive column, the side wall of the insulating partition plate is fixedly provided with a trigger block corresponding to the conductive column, and the top of the insulating cover is fixedly provided with a commercial warning lamp electrically connected with the trigger block.

Preferably, the joint subassembly sets up in the T shape pole of hollow post lateral wall lower extreme including sliding, the fixed joint piece that is equipped with in rod end of T shape pole, the groove that the slope set up is seted up to the one end that the lateral wall of joint piece is close to the insulation board, it is equipped with the second spring jointly to fix between the lower extreme of joint piece and the inner wall of hollow post.

Preferably, a guide rod is fixedly arranged inside the through hole, and the rod wall of the guide rod is in sliding connection with the side wall of the switching plate.

Preferably, the lower extreme of switching board is fixed and is equipped with the ironbar, two inner wall lower extremes of insulating boot all are fixed and are equipped with the magnetism piece of inhaling corresponding with the ironbar position.

Compared with the prior art, the application provides a TFT transistor semiconductor layer short circuit testing arrangement, possesses following beneficial effect:

1. this TFT transistor semiconductor layer short circuit testing arrangement, through the testboard that is equipped with, the plastic case, the power supply board, the insulating boot, TFT power supply unit spare, the switch board, the insulator spindle, the adapter plug, the test connector lug, mutually supporting of TFT mounting panel, can cooperate adapter plug through TFT power supply unit spare, adapter plug and test connector lug carry out the short circuit test for TFT transistor semiconductor layer, and pass through adapter plug, adapter plug and test connector lug's redundancy design, can be when testing a TFT transistor semiconductor layer, another TFT transistor semiconductor layer of installation, effectively reduce the time wasted of unloading on the reduction, improve holistic efficiency of software testing.

2. According to the TFT transistor semiconductor layer short circuit testing device, due to the arranged short circuit protection mechanism, instantaneous large current in short circuit can be utilized to enable the electromagnet to work to disconnect a circuit of the TFT transistor semiconductor layer, and therefore the TFT power supply assembly and the TFT transistor semiconductor layer can be protected.

The part that does not relate to in the device all is the same with prior art or can adopt prior art to realize, and the time that the unloading was wasted can effectively be reduced to the last unloading of TFT transistor semiconductor layer to this application, improves holistic efficiency of software testing, can carry out short-circuit protection simultaneously.

Drawings

Fig. 1 is a schematic structural diagram of a TFT transistor semiconductor layer short circuit testing apparatus provided in the present application;

FIG. 2 is a schematic view showing the internal structure of the hollow column of FIG. 1;

fig. 3 is a schematic structural diagram of the TFT power supply assembly in fig. 1.

In the figure: 1. a test bench; 2. a plastic case; 3. a power supply board; 4. an insulating cover; 5. a switching plate; 6. an insulating rod; 7. an adapter plug; 8. an adapter socket; 9. testing the connector lug; 10. a TFT mounting plate; 11. a hollow column; 12. an insulating plate; 13. a conductive block; 14. an insulating spacer; 15. an iron core; 16. a first spring; 17. an electromagnet; 18. an AC/DC converter; 19. a DC/DC converter; 20. a drive plate; 21. a guide bar; 22. a conductive post; 23. a trigger block; 24. a warning light; 25. a T-shaped rod; 26. a clamping block; 27. a second spring; 28. iron bars; 29. and (6) magnetically attracting the block.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments.

Referring to fig. 1-3, a TFT transistor semiconductor layer short circuit testing device, including testboard 1, the fixed plastic box 2 that is equipped with in upper end of testboard 1, the fixed power supply board 3 that is equipped with in inside of plastic box 2, be equipped with TFT power supply assembly on the power supply board 3, the fixed insulating boot 4 that is equipped with in upper end of plastic box 2, the through-hole has been seted up to the terminal surface of insulating boot 4, and the inside sliding connection of through-hole has switching board 5, two lateral walls of switching board 5 are all fixed and are equipped with insulator spindle 6, the one end that two insulator spindles 6 are opposite is all fixed and is equipped with adapter plug 7, two inner walls of insulating boot 4 are all fixed be equipped with adapter plug 8 for with adapter plug 7 position, two adapter plug 8 all are connected with test connector 9, the fixed two TFT mounting panels 10 that are equipped with on the testboard 1, the inside of plastic box 2 is equipped with short circuit protection mechanism.

Short-circuit protection mechanism includes hollow post 11, the inside activity of hollow post 11 is equipped with insulation board 12, the lateral wall of insulation board 12 and the inner wall of hollow post 11 all fix and are equipped with conducting block 13, two switching cutting all are connected with one of them conducting block 13 electricity, the inside of hollow post 11 is fixed and is equipped with insulating barrier 14, insulating barrier 14's lateral wall sliding connection has iron core 15, the tip of iron core 15 and the lateral wall fixed connection of insulation board 12, it is equipped with first spring 16 jointly to fix between the lateral wall of insulation board 12 and the lateral wall of insulating barrier 14, hollow post 11 is close to the fixed electro-magnet 17 that is connected with the TFT power supply unit that is equipped with of one end inner wall of iron core 15, be equipped with the joint subassembly corresponding with insulation board 12 position on the hollow post 11, under the normal test condition, the magnetic attraction that electro-magnet 17 produced is less than the elasticity of first spring 16, two conducting blocks 13 contact this moment, when taking place the short-circuit condition, because of instantaneous current's increase, electro-magnet 17 produces great magnetic attraction, can adsorb iron core 15 this moment, thereby can drive two conducting blocks 13 through insulation board 12 and separate, can make the circuit disconnection between the semiconductor layer of TFT power supply unit, thereby short-circuit protection this moment.

The TFT power supply assembly comprises an AC/DC converter 18, a DC/DC converter 19 and a driving board 20, wherein the AC/DC converter 18 is used for converting an external current into a 12V (determined according to a TFT transistor semiconductor layer to be tested, and can also be 14V, 18V and the like) direct current power supply to be supplied to the DC/DC converter 19, the DC/DC converter 19 is used for converting the direct current voltage generated by the AC/DC converter 18 into a proper voltage to be supplied to the driving board 20 for use, and the driving board 20 comprises a microcontroller circuit, a main control circuit and the like for controlling the TFT transistor semiconductor layer, which are mature technologies in the prior art, so that the redundant description is not repeated.

The side wall of the insulating plate 12 is fixedly provided with a conductive column 22, the side wall of the insulating partition 14 is fixedly provided with a trigger block 23 corresponding to the position of the conductive column 22, the top of the insulating cover 4 is fixedly provided with a warning lamp 24 electrically connected with the trigger block 23, and when the insulating plate 12 moves, the conductive column 22 can be in contact with the trigger block 23, so that the circuit of the warning lamp 24 can be switched on, and the warning lamp 24 works to remind people of the occurrence of a short circuit condition.

The clamping assembly comprises a T-shaped rod 25 arranged at the lower end of the side wall of the hollow column 11 in a sliding mode, a clamping block 26 is fixedly arranged at the rod end of the T-shaped rod 25, a groove which is obliquely arranged is formed in one end, close to the insulating plate 12, of the side wall of the clamping block 26, a second spring 27 is fixedly arranged between the lower end of the clamping block 26 and the inner wall of the hollow column 11, when the insulating plate 12 moves, the clamping block 26 can be extruded upwards through the groove, after the insulating plate 12 crosses the clamping block 26, the clamping block 26 can move downwards under the action of the second spring 27, so that the insulating plate 12 can be blocked and limited, and the two conductive blocks 13 are prevented from being contacted and conducted again.

The inside of through-hole is fixed and is equipped with guide bar 21, and the pole wall of guide bar 21 and the lateral wall sliding connection of switchboard 5 can improve the stability that switchboard 5 removed through this kind of setting.

The lower end of the switch plate 5 is fixedly provided with an iron bar 28, the lower ends of the two inner walls of the insulating cover 4 are respectively fixedly provided with a magnetic attraction block 29 corresponding to the iron bar 28, and the switch plate 5 can be assisted to be fixed through the contact between the iron bar 28 and the magnetic attraction block 29.

In this application, during the use, on TFT crystal semiconductor layer installation and a TFT mounting panel 10 that will await measuring, and carry out the wiring with its homonymy test connector 9, then remove switch board 5, make adapter plug 7 be connected with the adapter socket 8 of this side, thereby can carry out the short circuit test, when carrying out the short circuit test, can install the TFT crystal semiconductor layer that awaits measuring next on another TFT mounting panel 10, treat that the short circuit test of former TFT transistor semiconductor layer is accomplished the back, can make adapter plug 7 and the mutual alternate switch-on of adapter socket 8 of both sides through removing switch board 5, can carry out the test of next round immediately.

The above description is only for the preferred embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art should be considered to be within the scope of the present application, and all equivalent substitutions and changes according to the technical solutions and the inventive concepts of the present application should be covered by the scope of the present application.

Claims

1. The utility model provides a TFT transistor semiconductor layer short circuit testing arrangement, includes testboard (1), its characterized in that, the fixed plastics box (2) that are equipped with in upper end of testboard (1), the fixed power supply board (3) that is equipped with in inside of plastics box (2), be equipped with TFT power supply subassembly on power supply board (3), the fixed insulating boot (4) that are equipped with in upper end of plastics box (2), the through-hole has been seted up to the terminal surface of insulating boot (4), and the inside sliding connection of through-hole has switching board (5), two lateral walls of switching board (5) are all fixed being equipped with insulator spindle (6), two the one end opposite in insulator spindle (6) is all fixed being equipped with adapter plug (7), two inner walls of insulating boot (4) are all fixed being equipped with adapter plug (8) for adapter plug (7) position, two adapter plug (8) all are connected with test connector (9), the fixed two TFT mounting panels (10) that are equipped with on testboard (1), the inside of plastics box (2) is equipped with short circuit protection mechanism.

2. The TFT transistor semiconductor layer short circuit testing device according to claim 1, wherein the short circuit protection mechanism comprises a hollow column (11), an insulating plate (12) is movably arranged inside the hollow column (11), the side wall of the insulating plate (12) and the inner wall of the hollow column (11) are respectively fixedly provided with a conductive block (13), the two switching insertion strips are respectively electrically connected with one conductive block (13), an insulating partition plate (14) is fixedly arranged inside the hollow column (11), the side wall of the insulating partition plate (14) is slidably connected with an iron core (15), the end part of the iron core (15) is fixedly connected with the side wall of the insulating plate (12), a first spring (16) is fixedly arranged between the side wall of the insulating plate (12) and the side wall of the insulating partition plate (14), the inner wall of one end, close to the iron core (15), of the hollow column (11) is fixedly provided with a clamping assembly connected with the TFT power supply assembly, and the electromagnet (11) is provided with the clamping assembly corresponding to the position of the insulating plate (12).

3. A TFT transistor semiconductor layer short circuit test arrangement as claimed in claim 1, wherein the TFT power supply assembly comprises an AC/DC converter (18), a DC/DC converter (19) and a driver board (20).

4. The TFT transistor semiconductor layer short circuit testing device according to claim 2, wherein a conductive pillar (22) is fixedly arranged on the side wall of the insulating plate (12), a trigger block (23) corresponding to the conductive pillar (22) is fixedly arranged on the side wall of the insulating partition plate (14), and a warning lamp (24) electrically connected with the trigger block (23) is fixed on the top of the insulating cover (4).

5. The TFT transistor semiconductor layer short circuit testing device according to claim 2, wherein the clamping assembly comprises a T-shaped rod (25) slidably arranged at the lower end of the side wall of the hollow column (11), a clamping block (26) is fixedly arranged at the rod end of the T-shaped rod (25), an obliquely arranged groove is formed in one end, close to the insulating plate (12), of the side wall of the clamping block (26), and a second spring (27) is fixedly arranged between the lower end of the clamping block (26) and the inner wall of the hollow column (11) together.

6. A TFT transistor semiconductor layer short circuit testing device according to claim 1, wherein a guide bar (21) is fixed inside the through hole, and a bar wall of the guide bar (21) is slidably connected to a side wall of the switch plate (5).

7. The short circuit testing device for the semiconductor layer of the TFT transistor according to claim 1, wherein an iron bar (28) is fixedly arranged at the lower end of the switching plate (5), and magnetic blocks (29) corresponding to the iron bar (28) are fixedly arranged at the lower ends of the two inner walls of the insulating cover (4).