CN218274603U - Mixed integrated device of HEMT and embedded electrode LED - Google Patents

Abstract

The utility model discloses a mixed integrated device of HEMT and embedded electrode LED, include HEMT epitaxial substrate, gaN channel layer, alGaN barrier layer, source drain gate electrode, second passivation layer, bonding metal layer, LED's N electrode, first passivation layer, bar metal level, ag reflection stratum, P-GaN layer, alGaN electron barrier layer, inGaN/GaN multiple quantum well layer, N-GaN layer, the P electrode of third passivation layer LED that from the top down arranges in proper order; the n-electrodes of the LEDs are uniformly arranged in the form of embedded electrodes in a hole-like structure within the device. The utility model discloses can effectively improve the light efficiency of integrated device, increase the saturation current of HEMT device, realize the high light output of integrated device under the heavy current.

Description

Hybrid integrated device of HEMT (high Electron mobility transistor) and embedded electrode LED (light-emitting diode)

Technical Field

The utility model relates to a semiconductor construction technical field especially relates to a HEMT and embedded electrode LED's hybrid integrated device.

Background

Group III nitride compound semiconductors have been widely used in both Light Emitting Diodes (LEDs) and High Electron Mobility Transistors (HEMTs). Because the GaN LED has the advantages of long service life, high luminous efficiency, environmental protection and the like, the GaN LED firmly occupies the market of solid-state lighting and display, and the GaN-based HEMT also obtains great development in the fields of power electronics and radio frequency due to the excellent performance of the GaN-based HEMT.

The AlGaN/GaN HEMT device (heterojunction structure device) with high electron mobility and low on-resistance is used as the driver of the LED, so that voltage control can be realized, the complexity of a modulation circuit is simplified, and the AlGaN/GaN HEMT device can be widely applied to intelligent display and visible light communication systems.

In the conventional horizontal HEMT-LED monolithic integrated device, because the HEMT region cannot emit light, in order to avoid greatly reducing the light efficiency of an integrated device unit, the size of the HEMT device is usually selected to be smaller, so that the saturation current of the integrated device is limited, and the LED cannot work under high current.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, the utility model aims to provide a mixed integrated device of HEMT and embedded electrode LED, the HEMT part does not shelter from light, increases LED's light-emitting area, effectively promotes LED's light extraction efficiency, indicates the saturation current of gate electrode increase integrated device more, promotes LED's light output.

The utility model discloses an one of the purpose adopts following technical scheme to realize:

a mixed integrated device of a HEMT and an embedded electrode LED comprises a HEMT epitaxial substrate, a GaN channel layer, an AlGaN barrier layer, a source drain gate electrode, a second passivation layer, a bonding metal layer, an N electrode of the LED, a first passivation layer, a Bar metal layer, an Ag reflecting layer, a P-GaN layer, an AlGaN electronic barrier layer, an InGaN/GaN multi-quantum well layer, an N-GaN layer and a P electrode of a third passivation layer LED which are sequentially arranged from top to bottom.

Further, the n-electrodes of the LEDs are uniformly arranged in the form of embedded electrodes in a hole-like structure within the device.

Further, the gate electrode of the HEMT is a multi-finger gate electrode structure.

Further, the first passivation layer, the second passivation layer and the third passivation layer are made of SiO ₂ Or Si ₃ N ₄ 。

Further, the thickness of the first passivation layer is 200-300 nm, the thickness of the second passivation layer is 1.5-2.5 um, and the thickness of the middle third passivation layer is 200-300 nm.

Compared with the prior art, the beneficial effects of the utility model reside in that:

the utility model provides a HEMT and embedded electrode LED's mixed integrated device, this phase ratio in horizontal integration, HEMT region position in LED's the back, do not shelter from light, can effectively improve the light efficiency of integrated device. Compare in traditional HEMT + LED integrated device and be subject to the saturation current that HEMT size leads to, can't realize that LED works under the heavy current, the utility model discloses well HEMT adopts and indicates the gate electrode structure more, can effectively increase the saturation current of HEMT device, realizes the high optical output power of integrated device under the heavy current.

Drawings

Fig. 1 is a schematic structural diagram of an LED epitaxial wafer before alignment bonding according to an embodiment of the present invention;

fig. 2 is a schematic structural view of an HEMT epitaxial wafer before alignment bonding according to an embodiment of the present invention;

fig. 3 is a schematic structural view of a HEMT multi-finger gate electrode according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a HEMT-LED hybrid integrated device according to an embodiment of the present invention; .

Fig. 5 shows transfer characteristics of a HEMT-LED hybrid integrated device according to an embodiment of the present invention;

fig. 6 shows output characteristics of a HEMT-LED hybrid integrated device according to an embodiment of the present invention;

fig. 7 shows the optical output power of the HEMT-LED hybrid integrated device according to an embodiment of the present invention.

In the figure: 1. a HEMT epitaxial substrate; 2. a GaN channel layer; 3. an AlGaN barrier layer; 4. a HEMT gate electrode; 5. an HEMT drain electrode; 6. a HEMT source electrode; 7. a second passivation layer; 8. bonding the metal layer; 9. an LED substrate; 10. an AlGaN/AlN buffer layer; 11. an n-GaN layer; 12. an InGaN/GaN multi-quantum well layer; 13. an AlGaN electron blocking layer; 14. a p-GaN layer; 15. a first passivation layer; 16. an Ag reflective layer; 17. a Bar metal layer; 18. an N-electrode of the LED; 19. and a third passivation layer.

Detailed Description

The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that the embodiments or technical features described below can be arbitrarily combined to form a new embodiment without conflict.

As shown in fig. 1 to 7, the present application further provides a hybrid integrated device of a HEMT (High Electron Mobility Transistor) and an embedded electrode LED, where the HEMT does not partially shield light, so as to increase the light emitting area of the LED, effectively improve the light extraction efficiency of the LED, and the multi-finger gate electrode increases the saturation current of the integrated device, and improves the light output power of the LED.

Specifically, the device comprises an HEMT epitaxial substrate 1, a GaN (gallium nitride) channel layer 2, an AlGaN (aluminum gallium nitrogen) barrier layer 3, an HEMT source electrode 6, an HEMT drain electrode 5, an HEMT gate electrode 4, a second passivation layer 7, a bonding metal layer 8, an LED N-electrode 18, a first passivation layer 15, a Bar metal layer 17, an Ag reflecting layer 16, a P-GaN layer 14, an AlGaN electronic barrier layer 13, an InGaN/GaN multi-quantum well 12 layer, an N-GaN layer 11, a third passivation layer 19 and an LED P electrode which are sequentially arranged from top to bottom; the N-electrodes 18 of the LED are uniformly arranged in the form of embedded electrodes in a hole-like structure within the device.

More, the first passivation layer, the second passivation layer and the third passivation layer are all SiO ₂ Or Si ₃ N ₄ . The thickness of the first passivation layer is 200-300 nm, the thickness of the second passivation layer is 1.5-2.5 um, and the thickness of the middle third passivation layer is 200-300 nm, so that the light output efficiency of the device is better improved.

Fig. 5 to 7 are schematic diagrams showing transfer characteristics, output characteristics, and optical output power of the hybrid integrated device of the HEMT and the embedded electrode LED. It can be seen from the figure that the hybrid integrated device of the HEMT and the embedded electrode LED provided by the present application effectively increases high light output power under a large current.

The mixed integrated device of the HEMT and the embedded electrode LED is manufactured by the following method:

s1, growing LED epitaxial structures of an AlGaN/AlN buffer layer 10, an n-GaN layer 11, an InGaN/GaN multi-quantum well layer 12, an AlGaN electronic barrier layer 13 and a p-GaN layer 14 on a substrate in sequence by MOCVD technology, and growing HEMT epitaxial structures of a GaN channel layer 2 and an AlGaN barrier layer 3 on a Si substrate B, wherein the Al component concentration of the barrier layers is 0.2;

s2, depositing a reflector layer on the surface of the p-GaN layer 14 of the LED epitaxial structure, and forming a required reflector layer pattern by photoetching, developing and BOE wet etching;

and S3, forming a layer of negative glue in the designated area of the etched silver reflecting layer by photoetching and developing, and depositing the Bar metal layer 17 by adopting an electron beam evaporation mode. Wherein the Bar metal layer 17 comprises Ni, ag, cr, pt, au and other metals.

S4, removing the photoresist and the metal layer above the photoresist through a photoresist stripping process to form a plurality of porous structures;

s5, removing the p-GaN layer 14, the InGaN/GaN multi-quantum well layer 12 and the AlGaN electron barrier layer 13 below the porous structure through photoetching and ICP etching until the n-GaN layer 11 is exposed;

s6, depositing a first passivation layer 15 in the etching area in the step S5 by utilizing PECVD;

s7, removing a partial region of the first passivation layer 15 in the step S6 through photoetching, developing and BOE wet etching until the n-GaN layer 11 is exposed to form an n electrode deep hole;

s8, depositing an n-electrode metal layer at the deep hole of the n-electrode in an electron beam evaporation mode;

s9, depositing an Au/Sn bonding metal layer 8 in a partial area on the first passivation layer through photoetching and developing;

and S10, depositing a metal layer on the AlGaN surface of the HEMT epitaxial wafer in an electron beam evaporation mode through photoetching and developing, and annealing at high temperature to prepare a source electrode and a drain electrode with ohmic contact. In the step, the annealing atmosphere of the HEMT source drain electrode is nitrogen, the annealing temperature is 850 ℃, and the annealing time is 30 seconds.

S11, depositing a multi-metal layer by photoetching, developing and adopting an electron beam evaporation mode to prepare a multi-finger HEMT gate electrode 4 with Schottky contact; the metal layer comprises Ni and Au.

S12, depositing a second passivation layer on the epitaxial surface of the HEMT by utilizing PECVD; the thickness of the second passivation layer is 2um.

S13, removing the second passivation layer above the source, drain and gate electrodes in the step S12 by photoetching, developing and BOE wet etching, and depositing the Au/Sn bonding metal layer 8 in an electron beam evaporation mode;

and S14, bonding the LED epitaxial wafer prepared in the step S10 and the HEMT epitaxial wafer prepared in the step S14 together through a bonding machine at high temperature and high pressure, removing the LED substrate 9 through mechanical grinding thinning and chemical corrosion, exposing the n-GaN layer 11 through an ICP dry etching mode, wherein the chemical corrosion is a BOE chemical corrosion mode, and exposing the n-GaN layer through the ICP dry etching mode, so that the purpose of substrate transfer is achieved.

S15, growing a third passivation layer 19 on the surface of the n-GaN layer 11 through a PECVD technology;

s16, removing a part of the passivation layer on the n-GaN layer 11 through photoetching, developing and BOE wet etching, and sequentially removing the n-GaN layer 11, the InGaN/GaN multi-quantum well layer 12, the AlGaN electron barrier layer 13 and the p-GaN layer 14 by combining ICP etching until the Bar metal layer is exposed; depositing a p-electrode metal layer of the LED in an etching area in an electron beam evaporation mode; the deposited p-electrode multi-metal layer comprises metals such as Cr, al, ti, au and the like.

And S17, removing the passivation layer above the HEMT gate electrode and the HEMT source electrode by photoetching, developing and BOE wet etching, and depositing an Au metal layer as a leading-out electrode in an electron beam evaporation mode.

And S17, removing the passivation layer above the HEMT gate electrode 4 and the HEMT source electrode 6 by photoetching, developing and BOE wet etching, and depositing an Au metal layer as a lead-out electrode in an electron beam evaporation mode.

The utility model provides a HEMT and embedded electrode LED's mixed integrated device compares in the horizontal integration, and the HEMT region is located LED's the back, does not shelter from light, can effectively improve the light efficiency of integrated device. Compare in traditional HEMT + LED integrated device and be subject to the saturation current that HEMT size leads to, can't realize that LED works under the heavy current, the utility model discloses well HEMT adopts and indicates the gate electrode structure more, can effectively increase the saturation current of HEMT device, realizes the high optical output power of integrated device under the heavy current.

The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention cannot be limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are all within the protection scope of the present invention.

Claims (5)

1. A mixed integrated device of a HEMT and an embedded electrode LED is characterized by comprising a HEMT epitaxial substrate, a GaN channel layer, an AlGaN barrier layer, a source drain gate electrode, a second passivation layer, a bonding metal layer, an LED N electrode, a first passivation layer, a Bar metal layer, an Ag reflecting layer, a P-GaN layer, an AlGaN electronic barrier layer, an InGaN/GaN multi-quantum well layer, an N-GaN layer and a third passivation layer LED P electrode which are sequentially arranged from top to bottom.

2. A hybrid integrated device of HEMT and embedded electrode LED according to claim 1, wherein said LED n-electrode is uniformly arranged in the form of an embedded electrode in a hole-like structure in said device.

3. A hybrid integrated device of a HEMT and embedded electrode LED according to claim 1, wherein said HEMT has a gate electrode of a multi-finger gate electrode structure.

4. A process as claimed in claim 1The hybrid integrated device of the HEMT and the embedded electrode LED is characterized in that the first passivation layer, the second passivation layer and the third passivation layer are made of SiO ₂ Or Si ₃ N ₄ 。

5. The hybrid integrated device of the HEMT and the embedded electrode LED according to claim 1, wherein the thickness of the first passivation layer is 200-300 nm, the thickness of the second passivation layer is 1.5-2.5 um, and the thickness of the third passivation layer is 200-300 nm.

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