CN218239788U - LED huge amount detection equipment - Google Patents

LED huge amount detection equipment Download PDF

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Publication number
CN218239788U
CN218239788U CN202221939953.0U CN202221939953U CN218239788U CN 218239788 U CN218239788 U CN 218239788U CN 202221939953 U CN202221939953 U CN 202221939953U CN 218239788 U CN218239788 U CN 218239788U
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lens
led
detection
area
light
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CN202221939953.0U
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Chinese (zh)
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游证杰
庄益祯
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Shunquanda Chongqing Electronic Co ltd
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Shunquanda Chongqing Electronic Co ltd
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Abstract

The utility model relates to the technical field of LED wafer, in particular to a LED bulk detection device, which comprises a transmission mechanism, wherein the upper end surface of the transmission mechanism is sequentially supported with an AOI detection area, a PL surface detection area and a PL line sweeping area; the LED wafer is transmitted on the transmission mechanism, the inside of the AOI detection area comprises an LED line light emitter and a LineCCD, and the inside of the PL detection area comprises a surface camera, a semi-reflective lens, a large lens, a dodging mirror group and a reflector; the PL Line scanning area comprises a second LineCCD, a second semi-reflective lens and a Line scanning lens. The AOI detection area is utilized to detect the cut and the fouling of the surface of the LED wafer; utilize the PL face to examine the district and carry out the detection light intensity brilliance and the electric leakage monitoring of examining to the LED wafer, utilize the PL line to sweep the district and carry out spectral measurement, analysis distribution etc. of the inside LED crystalline grain of LED wafer and detect, the detection through a plurality of steps can realize the all-round detection to the LED wafer, prevents the condition that the later stage reexamination from appearing to the efficiency of LEF wafer detection has been improved.

Description

LED huge amount detection equipment
Technical Field
The utility model relates to a check out test set especially relates to a LED huge amount check out test set, belongs to LED wafer technical field.
Background
The LED wafer is the core part of the LED, in fact, the main photoelectric parameters of the LED such as wavelength, brightness, forward voltage and the like basically depend on the wafer material, and the processing and manufacturing of the related circuit elements of the LED are completed on the wafer, so the wafer technology and equipment are the key points of the wafer manufacturing technology;
the LED wafer is required to be detected after being processed, so that a product is checked and accepted, whether the processed LED wafer is qualified or not is observed through detection, and therefore corresponding detection equipment is required to be adopted for detection;
however, when the existing detection setting is used for detecting the LED wafer, the detection effect is single, and the detection cannot be carried out in an all-round way, so that the detection effect of the LED wafer can be influenced, the re-detection condition can also occur in the later period, and the detection efficiency of the LED wafer can be influenced.
Therefore, there is a need for improved LED wafer inspection to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The purpose of the invention is to provide LED massive detection equipment, which utilizes an AOI detection area to detect the cut and the stain on the surface of an LED wafer; utilize the PL face to examine the district and carry out the detection light intensity brilliance and the electric leakage monitoring of examining to the LED wafer, utilize the PL line to sweep the district and carry out spectral measurement, analysis distribution etc. of the inside LED crystalline grain of LED wafer and detect, the detection through a plurality of steps can realize the all-round detection to the LED wafer, prevents the condition that the later stage reexamination from appearing to the efficiency of LEF wafer detection has been improved.
In order to achieve the above object, the utility model discloses a main technical scheme include:
an LED bulk detection device comprises a conveying mechanism, wherein an AOI detection area, a PL surface detection area and a PL line scanning area are sequentially supported on the upper end surface of the conveying mechanism;
the LED wafer is transmitted on the transmission mechanism, and an LED line light transmitter and a LineCCD are arranged in the AOI detection area;
the PL surface inspection area comprises a surface camera, a semi-reflecting lens, a large lens, a dodging lens group and a reflecting mirror;
the PL Line scanning area comprises a second LineCCD, a second semi-reflective lens and a second Line scanning lens.
Preferably, the conveying mechanism comprises a support table and a conveying main body, the support table is used for supporting the conveying main body, and the AOI detection area, the PL plane detection area and the PL line scanning area are sequentially arranged right above the space between two sides of the support table.
Preferably, the Line scanning lens is connected to the detection end of the Line CD, and the emitting ends of the LED Line light emitter and the Line scanning lens face the LED wafer transmitted by the transmission mechanism.
Preferably, a large target surface telecentric lens is arranged at the emitting end of the surface type camera, the large lens is positioned between the light uniformizing lens group and the semi-reflective lens, the light uniformizing lens group is positioned between the reflective mirror and the large lens, and a small-angle lens is arranged at the light inlet end of the PL surface detection area and is used for projecting UV light with a special wavelength.
Preferably, the semi-reflective lens is used for reflecting the light transmitted by the large lens to the LED wafer for detection.
Preferably, a special light source emitter is further arranged inside the PL linear scanning area, and the special light source emitter is used for emitting detection light to the second semi-reflective lens.
The utility model discloses possess following beneficial effect at least:
1. detecting the cut and the stain on the surface of the LED wafer by utilizing the AOI detection area; utilize the PL face to examine the district and carry out the detection light intensity brilliance and the electric leakage monitoring of examining to the LED wafer, utilize the PL line to sweep the district and carry out spectral measurement, analysis distribution etc. of the inside LED crystalline grain of LED wafer and detect, the detection through a plurality of steps can realize the all-round detection to the LED wafer, prevents the condition that the later stage reexamination from appearing to the efficiency of LEF wafer detection has been improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic diagram of the AOI detection zone of the present invention;
FIG. 3 is a schematic diagram of PL surface detection region detection;
FIG. 4 is a schematic diagram of PL line scan detection.
In the figure, 1-conveying mechanism, 2-AOI detection area, 3-PL surface detection area, 4-PL Line scanning area, 5-LED wafer, 6-LED Line light emitter, 7-LineCCD, 8-surface camera, 9-semi-reflecting lens, 10-big lens, 11-dodging lens group, 12-reflecting mirror, 13-second LineCCD, 14-second semi-reflecting lens, 15-supporting table, 16-conveying body, 17-small angle lens, 18-Line scanning lens, 19-special light source emitter, 20-second Line scanning lens and 21-big target surface telecentric lens.
Detailed Description
Embodiments of the present application will be described in detail with reference to the drawings and examples, so that how to implement technical means to solve technical problems and achieve technical effects of the present application can be fully understood and implemented.
As shown in fig. 1-4, the LED bulk inspection apparatus provided in this embodiment includes a conveying mechanism 1, the conveying mechanism 1 includes a supporting platform 15 and a conveying main body 16, the supporting platform 15 is used to support the conveying main body 16, and the aoi detection area 2, the PL area detection area 3 and the PL line scanning area 4 are sequentially arranged right above between two sides of the supporting platform 15;
the upper end surface of the conveying mechanism 1 is sequentially supported with an AOI detection area 2, a PL surface detection area 3 and a PL line scanning area 4;
an LED wafer 5 is conveyed on the conveying mechanism 1, and an LED line light emitter 6 and a LineCCD7 are arranged in the AOI detection area 2; the detection end of the Line CCD7 is connected with a Line scanning lens 18, and the emitting ends of the LED Line light emitter 6 and the Line scanning lens 18 face the LED wafer 5 transmitted on the transmission mechanism 1;
the PL surface inspection area 3 comprises a surface camera 8, a semi-reflecting lens 9, a large lens 10, a dodging mirror group 11 and a reflecting mirror 12; the emission end of the surface type camera 8 is provided with a large target surface telecentric lens 21, a large lens 10 is positioned between a light uniformizing lens group 11 and a semi-reflecting lens 9, the light uniformizing lens group 11 is positioned between a reflecting mirror 12 and the large lens 10, the light inlet end of the PL surface detection area 3 is provided with a small-angle lens 17, and the small-angle lens 17 is used for projecting UV light with special wavelength; the semi-reflective lens 9 is used for reflecting the light transmitted out through the large lens 10 to the LED wafer 5 for detection;
the PL Line scanning area 4 internally comprises a second LineCCD13, a second semi-reflective lens 14 and a second Line scanning lens 20; the PL line scan region 4 is also provided with a special light source emitter 19 therein, the special light source emitter 19 being configured to emit detection light to the second semi-reflective lens 14.
As shown in fig. 1 to 4, the principle of the LED bulk detection device provided in this embodiment is as follows: placing an LED wafer 5 on the surface of a transmission main body 16 for transmission, firstly transmitting the LED wafer 5 to the position right below an AOI detection area 2 so as to detect cuts and stains on the surface of the LED wafer 5, during detection, utilizing an LED Line light emitter 6 to emit light to the surface of the LED wafer 5 for refraction, and detecting the stains and cuts on the surface of the LED wafer 5 by the aid of refracted light matched with a LineCCD7 detection end and a Line scanning lens 18; after the primary detection is finished, the LED wafer 5 is conveyed to the position under the PL surface detection area 3 by using the conveying main body 16, the crystal detection light intensity and electric leakage of the LED wafer 5 are monitored by using the PL surface detection area 3, when the detection is carried out, the external ultraviolet light with special wavelength is emitted on the small-angle lens 17, then the ultraviolet light is transmitted to the surface of the reflector 12 through the small-angle lens 17, then the ultraviolet light is transmitted to the light uniformizing lens group 11 through the reflector 12 for light uniformizing treatment, then the ultraviolet light is transmitted to the large lens 10, the light shape is adjusted by using the large lens 10, then the semi-reflecting lens 9 irradiates the surface of the LED wafer 5, so that the LED wafer emits high-uniform light, and the emitted high-uniform light can be received by the large target surface telecentric lens 21 and then is detected by the surface type camera 8; after further detection is finished, the LED wafer 5 is conveyed to the position under the PL Line scanning area 4 through the conveying main body 16, detection such as spectral measurement, analysis distribution and the like of LED crystal grains in the LED wafer 5 is carried out through the PL Line scanning area 4, therefore, LED spectral wavelength classification is carried out, when detection is carried out, light rays emitted by the special light source emitter 19 are matched through the second LineCCD13 and are emitted to the second semi-reflecting lens 14, then the light rays are reflected to the second Line scanning lens 20 through the second semi-reflecting lens 14, and then the detection is carried out through the second Line scanning lens 20.
As some terms are used throughout the description and claims to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. The description and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to achieve the technical effect basically.
It is noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in articles of commerce or systems in which the element is comprised.
The foregoing description shows and describes several preferred embodiments of the present invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, and is not to be construed as excluding other embodiments, and that it is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be protected by the claims appended hereto.

Claims (6)

1. An LED bulk detection device comprises a conveying mechanism (1), and is characterized in that an AOI detection area (2), a PL surface detection area (3) and a PL line scanning area (4) are sequentially supported on the upper end face of the conveying mechanism (1);
an LED wafer (5) is conveyed on the conveying mechanism (1), and an LED line light emitter (6) and a LineCCD (7) are arranged in the AOI detection area (2);
the PL surface inspection area (3) comprises a surface camera (8), a semi-reflecting lens (9), a large lens (10), a dodging mirror group (11) and a reflecting mirror (12) inside;
the PL Line scanning area (4) comprises a second LineCCD (13), a second semi-reflective lens (14) and a second Line scanning lens (20).
2. The LED bolus detection device of claim 1, wherein: the conveying mechanism (1) comprises a supporting table (15) and a conveying main body (16), the supporting table (15) is used for supporting the conveying main body (16), and the AOI detection area (2), the PL surface detection area (3) and the PL line scanning area (4) are sequentially arranged right above the space between two sides of the supporting table (15).
3. The LED bolus detection device of claim 1, wherein: the detection end of the LineCCD (7) is connected with a Line scanning lens (18), and the emitting ends of the LED Line light emitter (6) and the Line scanning lens (18) face the LED wafer (5) conveyed on the conveying mechanism (1).
4. The LED bolus detection device of claim 1, wherein: the transmitting end of the surface type camera (8) is provided with a large target surface telecentric lens (21), the large lens (10) is positioned between the light uniformizing lens group (11) and the semi-reflecting lens (9), the light uniformizing lens group (11) is positioned between the reflecting mirror (12) and the large lens (10), the light entering end of the PL surface detection area (3) is provided with a small-angle lens (17), and the small-angle lens (17) is used for projecting UV light with special wavelength.
5. The LED bolus detection device of claim 1, wherein: the semi-reflective lens (9) is used for reflecting the light transmitted by the large lens (10) to the LED wafer (5) for detection.
6. The apparatus of claim 1, wherein: and a special light source emitter (19) is further arranged inside the PL line scanning area (4), and the special light source emitter (19) is used for emitting detection light to the second semi-reflecting lens (14).
CN202221939953.0U 2022-07-26 2022-07-26 LED huge amount detection equipment Active CN218239788U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221939953.0U CN218239788U (en) 2022-07-26 2022-07-26 LED huge amount detection equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221939953.0U CN218239788U (en) 2022-07-26 2022-07-26 LED huge amount detection equipment

Publications (1)

Publication Number Publication Date
CN218239788U true CN218239788U (en) 2023-01-06

Family

ID=84678139

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202221939953.0U Active CN218239788U (en) 2022-07-26 2022-07-26 LED huge amount detection equipment

Country Status (1)

Country Link
CN (1) CN218239788U (en)

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