CN218215346U - LED reflecting electrode and flip LED chip - Google Patents
LED reflecting electrode and flip LED chip Download PDFInfo
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- CN218215346U CN218215346U CN202222041671.5U CN202222041671U CN218215346U CN 218215346 U CN218215346 U CN 218215346U CN 202222041671 U CN202222041671 U CN 202222041671U CN 218215346 U CN218215346 U CN 218215346U
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- 239000002131 composite material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
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- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 16
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- 229910001151 AlNi Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a LED reflection electrode, electrode structure include Ti/Ag reflection stratum, barrier layer, parcel layer, protective layer at least, and the Ti layer thickness is 5A-20A, and the Ag layer thickness is 500A-5000A. The reflection electrode is utilized to manufacture the inverted LED chip, so that the reflectivity of the reflection electrode is greatly improved, and the brightness of the whole chip is further improved.
Description
Technical Field
The utility model belongs to a cost control technique of LED electrode, concretely relates to LED reflection electrode and flip-chip LED chip.
Background
The conventional flip ODR (DBR + metal reflective electrode) structure is a hierarchical structure, wherein Al is used as a reflective layer, a barrier layer, a wrapping layer (Au) and a protective layer.
Wherein, the aluminum (Al) composite electrode is used as the reflecting electrode, al is used as the reflecting layer, and the reflectivity in the long wave band (500 nm-900 nm) has larger loss, as shown in figure 1.
SUMMERY OF THE UTILITY MODEL
The utility model discloses to prior art's shortcoming, designed a LED reflection electrode and flip-chip LED chip, utilized this reflection electrode to make flip-chip LED chip, greatly improved the reflectivity of the metal reflection stratum in the ODR structure, and then improved the luminance of whole chip.
The utility model discloses a technical scheme as follows: an LED reflective electrode, electrode structure, at least comprising a Ti/Ag reflective layer, a barrier layer, an encapsulation layer, a protective layer, the Ti layer having a thickness of 5A-20A and the Ag layer having a thickness of 500A-5000A.
On the basis of the scheme, preferably, the wrapping layer is an Al composite layer, and the Al composite layer comprises a first Al sublayer, a second Al sublayer and a Ti sublayer arranged between the first Al sublayer and the second Al sublayer.
On the basis of the above scheme, preferably, a first isolation layer and a second isolation layer are respectively arranged between the Ti sublayer and the first Al sublayer and between the Ti sublayer and the second Al sublayer,
the thicknesses of the first and second isolation layers are smaller than those of the first Al sublayer and the second Al sublayer;
the first and second isolation layers are made of Ni or Pt.
On the basis of the above scheme, preferably, a third isolation layer is arranged between the first Al sublayer and the first isolation layer, a fourth isolation layer is arranged between the second Al sublayer and the second isolation layer,
the third and fourth isolation layers are Cr.
Based on the above approach, the first and second Al sub-layers preferably have a thickness of 1000 a-10000 a;
the thicknesses of the first isolation layer and the second isolation layer are 100-2000A;
the thickness of the Ti sublayer is 100A-2000A;
the thicknesses of the third and fourth isolation layers are 5A-50A.
In addition to the above, the barrier layer preferably includes one or a combination of more of a Cr layer, a Ni layer, a Ti layer, and a Pt layer.
On the basis of the above scheme, the wrapping layer is preferably Au or Cu.
On the basis of the above scheme, the barrier layer is preferably Ni/Pt or Ni/Pt/Ni/Pt or Ti/Pt/Ti/Pt or Ni/Ti/Ni/Ti or Ni/Ti.
In addition to the above, the protective layer preferably includes any one or a combination of more of Cr, ni, ti, and Pt.
A flip-chip LED chip comprising a substrate;
the epitaxial layer is formed on the substrate and sequentially comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer;
the first electrode comprises a plurality of first N electrodes connected with the N-type semiconductor layer electrode and a plurality of first P electrodes electrically connected with the P-type semiconductor layer;
the first N electrode and the first P electrode are dispersedly arranged on the epitaxial layer;
the second electrode comprises a second N electrode electrically connected with the first N electrode and a second P electrode electrically connected with the plurality of first P electrodes, and a gap structure is arranged between the second N electrode and the second P electrode;
and the pad electrode comprises an N pad electrically connected with the second N electrode and a P pad electrically connected with the second P electrode.
The second electrode is the LED reflecting electrode.
Compared with the prior art, the utility model discloses following beneficial effect has:
the reflectivity of a metal reflecting layer in the ODR structure is greatly improved (after high-temperature baking, the reflectivity can reach 93% at 460nm, the reflectivity of AL is 86%, the reflectivity can reach 94-95% at a long wave band, and the reflectivity of AL can only reach 75%), and then the brightness of the whole chip is improved.
Improve structural stability, effectively prevent the metal ageing.
By adopting a non-gold Al composite structure, the production cost is greatly reduced, and the drapability of the electrode in the DBR and the stability of the whole electrode can be ensured.
Ni is used for isolated Al and Ti among the Al composite construction, can guarantee the stability of electrode at DBR hole slope position, avoid appearing the hole, guarantee the cover of electrode at the slope position, cr is used for isolated Al, ni, avoid among the follow-up high temperature technology Al, the appearance of Ni mutual melting phenomenon leads to ageing inefficacy, therefore, adopt the mode of CrNi parcel Ti to avoid Ti cavity and AlNi to melt each other simultaneously, guarantee the stability of whole electrode, thereby make the ageing stability of whole LED chip can guarantee.
Drawings
FIG. 1 is a reflection spectrum of an Al reflective layer;
FIG. 2 is a graph comparing the reflectivity of the TiAg composite layer with that of the Al reflective layer;
FIG. 3 is a schematic structural view of an Al composite wrapping layer;
FIG. 4 is a schematic structural diagram of a wrapping layer of Au; (ii) a
FIG. 5 is a schematic structural view of example 1;
FIG. 6 is a top view of a flip-chip ODR structure;
fig. 7 is a cross-sectional view of fig. 6.
Detailed Description
In order to more clearly illustrate embodiments of the present invention or technical solutions in the prior art, specific embodiments of the present invention will be described below with reference to the accompanying drawings. It is obvious that the drawings in the following description are only examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be obtained from these drawings without inventive effort.
As shown in fig. 1-4, an LED reflective electrode, the electrode structure being arranged on an epitaxial layer, comprising at least a Ti/Ag reflective layer 1, a barrier layer 2, an encapsulation layer 3, a protective layer 4, the Ti layer thickness being 5a-20 a and the Ag layer thickness being 500 a-5000 a.
In the embodiment, the Ti/Ag reflecting layer replaces the traditional Al reflecting layer, so that the reflectivity of the metal reflecting layer in the ODR structure is greatly improved (the reflectivity can reach 93% at 460nm and 86% at the Al reflecting layer after high-temperature baking, and can reach 94-95% at a long wave band and only 75% at Al), and the brightness of the whole chip is further improved.
Wherein,
the cladding layer 3 may be an Al composite layer or Au or Cu.
When the cladding layer is an Al composite layer, the barrier layer 2 comprises one or more of a Cr layer, a Ni layer, a Ti layer and a Pt layer. The barrier layer may be specifically a Ti single layer or a laminated structure of a Ni layer and a Pt layer or a laminated structure of a Ti layer and a Pt layer or a laminated structure of a Ni layer and a Ti layer, such as: cr/Ni/Ti/Ni/Cr or Ti/Pt/Ti/Pt/Ni/Cr or Ni/Pt/Ni/Pt/Ni/Cr.
When the coating layer is wrapped by Au or Cu, the barrier layer is Ni/Pt or Ni/Pt/Ni/Pt or Ti/Pt/Ti/Pt or Ni/Ti/Ni/Ti or Ni/Ti.
The protective layer comprises any one or combination of Cr, ni, ti and Pt, such as Cr/Pt/Ti, ti/Pt/Ti composite layer, or Cr/Ni/Pt/Ti composite layer, or Cr/Ti/Pt/Ti composite layer.
Example 1
As shown in fig. 5, the LED electrode structure provided in this embodiment includes a composite reflective layer of Ti/Ag structure, a barrier layer of Cr/Ni/Ti/Ni/Cr structure, an Al composite layer, and a protective layer of Cr/Pt/Ti structure.
In a barrier layer of a Cr/Ni/Ti/Ni/Cr structure, the Ti thickness is 100A-3000A, such as 100A, 300A, 500A, 800A, 1000A, 1200A, 1500A, 1800A, 2000A, 2200A, 2500A, 2800A, 3000A;
the thickness of Cr is 10A-200A, such as 10A, 30A, 50A, 800A, 100A, 120A, 150A, 180A, 200A;
the Ni thickness is 100A-3000A, such as 100A, 300A, 500A, 800A, 1000A, 1200A, 1500A, 1800A, 2000A, 2200A, 2500A, 2800A, 3000A.
In a protective layer of a Cr/Pt/Ti structure, the Ni thickness is 100A-2000A, such as 100A, 300A, 500A, 800A, 1000A, 1200A, 1500A, 1800A, 2000A;
pt has a thickness of 500A-5000A, such as 500A, 1000A, 1500A, 2000A, 2500A, 3000A, 3500A, 4000A, 4500A, 5000A;
the thickness of Ti is 10-100A, such as 100A, 300A, 500A, 800A, 1000A, 1200A, 1500A, 1800A, 2000A, 2200A, 2500A, 2800A, 3000A.
The Al composite layer comprises a first Al sublayer, a second Al sublayer and a Ti sublayer arranged between the first Al sublayer and the second Al sublayer, furthermore, a first isolation layer and a second isolation layer are respectively arranged between the Ti sublayer and the first Al sublayer and between the Ti sublayer and the second Al sublayer, preferably, the first isolation layer and the second isolation layer are Ni, and the Al composite layer formed by the method is as follows: the first Al sublayer/Ni first isolation layer/Ti sublayer/Ni second isolation layer/second Al sublayer.
Specifically, the thicknesses of the first and second isolating layers are smaller than the thicknesses of the first Al sublayer and the second Al sublayer; the thicknesses of the first Al sub-layer and the second Al sub-layer are 1000A-10000A; the thickness of the Ti sublayer is 100A-2000A; the first isolation layer and the second isolation layer are Ni and have a thickness of 100-2000A;
example 2
The difference from embodiment 1 is that the first and second separation layers are made of Pt, or one of the first and second separation layers may be made of Ni and the other made of Pt.
The Al composite layer thus formed was: the first Al sublayer/Pt first isolation layer/Ti sublayer/Pt second isolation layer/second Al sublayer, or the first Al sublayer/Ni first isolation layer/Ti sublayer/Pt second isolation layer/second Al sublayer, or the first Al sublayer/Pt first isolation layer/Ti sublayer/Ni second isolation layer/second Al sublayer.
Example 3
The present embodiment is different from embodiments 1 and 2 in that the LED electrode structure formed in embodiments 1 and 2 is not suitable for a subsequent LED chip processed at a high temperature, because the Al sublayer and the isolation layer made of Ni and Pt material are melted at a high temperature, so that the LED chip (especially a flip chip) electrode is suitable for a subsequent high temperature operation.
The Al composite layer thus formed may be: the first Al sublayer/Cr third isolation layer/Pt first isolation layer/Ti sublayer/Pt second isolation layer/Cr fourth isolation layer/second Al sublayer, or the first Al sublayer/Cr third isolation layer/Ni first isolation layer/Ti sublayer/Pt second isolation layer/Cr fourth isolation layer/second Al sublayer, or the first Al sublayer/Cr third isolation layer/Pt first isolation layer/Ti sublayer/Ni second isolation layer/Cr fourth isolation layer/second Al sublayer, or the first Al sublayer/Cr third isolation layer/Ni first isolation layer/Ti sublayer/Ni second isolation layer/Cr fourth isolation layer/second Al sublayer.
Specifically, the thicknesses of the first Al sublayer and the second Al sublayer are 1000A-10000A;
the thicknesses of the first isolation layer and the second isolation layer are 100-2000A;
the thickness of the Ti sublayer is 100A-2000A;
the thicknesses of the third and fourth isolation layers are 5A-50A.
Example 4
On the basis of example 3, the first and second Al sub-layers have a thickness of 2000-4000 a, such as 2000 a, 2500 a, 3000 a, 3500 a, 4000 a;
a first and a second isolation layer having a thickness of 300-600A, such as 300A, 400A, 500A, 600A;
a Ti sublayer thickness of 500-1500A, such as 500A, 700A, 900A, 1000A, 1200A, 1500A;
the thickness of the first and fourth isolation layers is 10A-30A, such as 10A, 20A, 30A.
Example 5
The LED electrode structure provided in this embodiment is applied as the first application example, and includes:
a reflective layer Ti/Ag layer, ti/Ag, the Ti thickness being 9A and the Ag thickness being 1000A;
the barrier layer is a Ti layer, and the thicknesses of the Ti layer and the Ti layer are as follows: ti thickness of 1000A, ni thickness of 600A, pt thickness of 600A;
an Au layer having a thickness of 8500A;
and the protective layer is Ti/Pt/Ti, wherein the thickness of Ti is 1000A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Comparative example 1
The thickness of the reflecting layer Al layer is 1000A;
the barrier layer is a Ti layer, and the thicknesses of the Ti layer and the Ti layer are as follows: the thickness of Ti is 1000A, the thickness of Ni is 600A, the thickness of Pt is 600A, the thickness of Ni is 600A, and the thickness of Pt is 600A;
an Au layer having a thickness of 8500A;
and the protective layer is Ti/Pt/Ti, wherein the thickness of Ti is 1000A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Taking 3 pieces of the product of the application example I and the product of the comparative example I, wherein the serial numbers of the 3 pieces correspond to the application piece 1 and the comparative piece 1 respectively; application sheet 2 and comparative sheet 2; application sheet 3, comparative sheet 3; in comparison with the comparative example, the application example one was as follows in terms of electrode reflectivity, photoelectric properties, and electrode aging tests,
electrode reflectance: in the two sheets corresponding to the numbers in the application example I and the comparative example I, since the Ti/Ag reflective layer is adopted in the application example I, and the Al reflective layer is adopted in the comparative example I, the light flux is high, which indicates that the reflectivity of the application example I is higher than that of the comparative example I.
Photoelectric properties: the two corresponding voltage and each yield of the first application example and the first comparative example are almost the same, and the brightness of the first application example is 1.23% higher than that of the first comparative example after being packaged.
Aging test of the electrode: both of the two sheets numbered in the application example one and the comparative example one can pass in-plant aging and environmental tests.
The test results are shown in the following table.
| Tablet number | Example type | Yield of | VF(V) | Luminous flux phi (lm) | △Φ(lm) |
| | Comparative example 1 | 94.28% | 2.71 | 37.11 | |
| | Application example 1 | 93.61% | 2.71 | 37.46 | 100.93% |
| | Application example 1 | 95.15% | 2.71 | 37.02 | |
| | Application example 1 | 92.13% | 2.71 | 37.55 | 101.44% |
| | Comparative example 1 | 92.10% | 2.72 | 37.02 | |
| | Application example 1 | 93.13% | 2.72 | 37.52 | 101.34% |
Example 6
The LED electrode structure provided in this embodiment, as application example two, includes:
a reflecting layer of a Ti/Ag layer, ti/Ag, wherein the Ti thickness is 9 ANG, and the Ag thickness is 1000 ANG;
a barrier layer Ti layer, ti/Pt/Ti/Pt/Ni/Cr, the thickness is as follows: the thickness of Ti is 1000A, the thickness of Ni is 600A, the thickness of Pt is 600A, the thickness of Ni is 600A, and the thickness of Pt is 600A;
the wrapping layer is Al/Cr/Ni/Ti/Ni/Cr/Al, and the thicknesses are as follows in sequence: an Al thickness of 4000A, a Cr thickness of 20A, a Ni thickness of 600A, a Ti thickness of 1000A, a Ni thickness of 600A, a Cr thickness of 20A, and an Al thickness of 4000A;
the protective layer, cr/Ni/Pt/Ti, has the following thicknesses in sequence: the thickness of Cr is 20A, the thickness of Ni is 600A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Comparative example No. two
The thickness of the reflecting layer Al layer is 1000A;
a barrier layer Ti layer, ti/Ni/Pt/Ni/Pt, the thicknesses of which are sequentially as follows: the thickness of Ti is 1000A, the thickness of Ni is 600A, the thickness of Pt is 600A, the thickness of Ni is 600A, and the thickness of Pt is 600A;
the wrapping layer, al/Cr/Ni/Ti/Ni/Cr/Al, the thickness is in turn: the Al thickness is 4000A, the Cr thickness is 20A, the Ni thickness is 600A, the Ti thickness is 1000A, the Ni thickness is 600A, the Cr thickness is 20A, and the Al thickness is 4000A;
the protective layer, cr/Ni/Pt/Ti, the thickness is in order: the thickness of Cr is 20A, the thickness of Ni is 600A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Taking 3 pieces of the products of the application example II and the comparative example II, and numbering the 3 pieces of the products respectively corresponds to an application piece 4 and a comparative piece 4; application sheet 5, comparative sheet 5; application sheet 6, comparative sheet 6; in comparison with the second application example and the second comparative example, the electrode reflectivity, the photoelectric properties and the electrode aging test were as follows,
electrode reflectance: in the two sheets corresponding to the numbers in the second application and the second comparative example, since the Ti/Ag reflective layer is used in the second application and the Al reflective layer is used in the second comparative example, the light flux is high, which indicates that the reflectance of the second application is higher than that of the second comparative example.
Photoelectric properties: the two voltages corresponding to the numbers in the application example II and the comparative example II are almost the same in all the yield rates, and the brightness of the application example II after being packaged is 1.4% higher than that of the comparative example II.
Aging test of the electrode: both of the two sheets numbered in the application example two and the comparative example two can pass in-plant aging and environmental tests.
The test results are shown in the following table.
| Tablet number | Example type | Yield of | VF(V) | Luminous flux phi (lm) | △Φ(lm) |
| | Comparative example No. two | 94.62% | 2.71 | 37.14 | |
| | Application example two | 94.85% | 2.72 | 37.70 | 101.50% |
| | Comparative example No. two | 89.65% | 2.71 | 36.91 | |
| | Application example two | 91.45% | 2.70 | 37.38 | 101.26% |
| Comparative sheet 6 | Comparative example No. two | 91.97% | 2.71 | 37.08 | |
| Application sheet 6 | Application example two | 90.70% | 2.72 | 37.62 | 101.44% |
Example 7
The LED electrode structure provided in this embodiment, as application example three, includes:
a reflecting layer of a Ti/Ag layer, ti/Ag, wherein the Ti thickness is 9 ANG, and the Ag thickness is 1000 ANG;
a barrier layer Ti layer, ti/Pt/Ti/Pt/Ni/Cr, the thickness is as follows: the thickness of Ti is 1000A, the thickness of Ni is 600A, the thickness of Pt is 600A, the thickness of Ni is 600A, and the thickness of Pt is 600A;
the wrapping layer, al/Cr/Ni/Cr/Al, the thickness is in turn: the Al thickness is 4000A, the Cr thickness is 20A, the Ni thickness is 600A, the Cr thickness is 20A, and the Al thickness is 4000A;
the protective layer, cr/Ni/Pt/Ti, has the following thicknesses in sequence: the thickness of Cr is 20A, the thickness of Ni is 600A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Comparative example No. three
A reflective layer Al layer having a thickness of 1000A;
a barrier layer Ti layer, ti/Pt/Ti/Pt/Ni/Cr, the thickness is as follows: the thickness of Ti is 1000A, the thickness of Ni is 600A, the thickness of Pt is 600A, the thickness of Ni is 600A, and the thickness of Pt is 600A;
the wrapping layer is Al/Cr/Ni/Cr/Al, and the thicknesses are as follows in sequence: the Al thickness is 4000A, the Cr thickness is 20A, the Ni thickness is 600A, the Cr thickness is 20A, and the Al thickness is 4000A;
the protective layer, cr/Ni/Pt/Ti, has the following thicknesses in sequence: the thickness of Cr is 20A, the thickness of Ni is 600A, the thickness of Pt is 2000A, and the thickness of Ti is 50A.
Taking 3 pieces of products of the application example III and the comparative example I, and numbering the 3 pieces of products respectively corresponding to the application piece 7 and the comparative piece 7; application sheet 8, comparative sheet 8; application sheet 9, comparative sheet 9; in comparison with the comparative example, the application example one was as follows in terms of electrode reflectivity, photoelectric properties, and electrode aging tests,
electrode reflectance: in the two sheets corresponding to the numbers in the third application example and the third comparative example, the light flux is high because the Ti/Ag reflecting layer is adopted in the third application example, and the Al reflecting layer is adopted in the third comparative example, which shows that the reflectivity of the first application example is higher than that of the third comparative example.
Photoelectric properties: the two voltages and the yield of the three sheets corresponding to the numbers in the application example and the third comparative example are almost the same, and the three sheets in the application example are 1.47% higher than the three sheets in the comparative example after the brightness is packaged.
Aging test of the electrode: both of the two sheets numbered in application example three and comparative example three were able to pass in-plant aging and environmental tests.
The test results are shown in the following table.
| Tablet number | Example type | Yield of | VF(V) | Luminous flux phi (lm) | △Φ(lm) |
| Comparative sheet 7 | Comparative example No. three | 92.08% | 2.70 | 36.53 | |
| Application sheet 7 | Application example three | 91.98% | 2.70 | 37.05 | 101.43% |
| Comparative sheet 8 | Comparative example No. three | 84.45% | 2.70 | 36.79 | |
| Application sheet 8 | Application example three | 90.91% | 2.71 | 37.40 | 101.65% |
| Contrast sheet 9 | Comparative example No. three | 85.40% | 2.70 | 36.54 | |
| Application sheet 9 | Application example three | 91.41% | 2.71 | 37.03 | 101.34% |
Example 8
As shown in fig. 6-7, a flip-chip ODR structure includes a substrate 100;
an epitaxial layer 200 formed on the substrate, the epitaxial layer comprising an N-type semiconductor layer 210, a light emitting layer 220, and a P-type semiconductor layer 230 in this order;
a first electrode 500 including a plurality of first N electrodes 520 connected to the N-type semiconductor layer electrode and a plurality of first P electrodes 510 electrically connected to the P-type semiconductor layer;
the first N electrode 520 and the first P electrode 510 are dispersedly disposed on the epitaxial layer 200;
the second electrode 700 includes a second N electrode 720 electrically connected to the first N electrode, and a second P electrode 710 electrically connected to the plurality of first P electrodes 510, and a gap structure is disposed between the second N electrode and the second P electrode.
The pad electrode 900 includes an N pad 920 electrically connected to the second N electrode 720, and a P pad 910 electrically connected to the second P electrode 710.
Wherein the second electrode is the electrode structure of examples 1-7.
Further, a current blocking layer 300 is disposed on the P-type semiconductor layer, the first P-electrode is disposed on the current blocking layer, and a current spreading layer 400 (an ITO transparent conductive layer) is disposed between the first P-electrode and the current blocking layer, and the first P-electrode is electrically connected to the P-type semiconductor layer through the current spreading layer.
More specifically, an N-type semiconductor layer 210, a light emitting layer 220, and a light emitting layer are sequentially deposited on the substrate 100
P-type semiconductor layer 230 to form epitaxial layer 200.
Depositing SiO2 on the epitaxial layer 200, obtaining a current barrier layer 300 through photoetching, then obtaining a current expansion layer 400 through deposition, and obtaining an N GaN step region 211 through etching.
The first P-electrode 510 and the first N-electrode 520 are deposited on the chip surface respectively with a gap structure therebetween.
Depositing a first insulating layer 600, respectively obtaining a plurality of exposed holes above the first P-electrode 510 and the first N-electrode 520, and depositing a corresponding second electrode, thereby obtaining a second P-type electrode 710 and a second N-electrode 720 connected to the first P-electrode and the first N-electrode.
Wherein the first insulating layer 600 is a DBR reflective layer, a portion of the second N electrode 720 is electrically connected to the first N electrode through the exposed hole, and the other portion is disposed on the first insulating layer; similarly, a portion of the second P electrode 720 is electrically connected to the first P electrode through the exposed hole, and another portion is disposed on the first insulating layer;
the second N electrode and the second P electrode are any of the LED electrode structures described in embodiments 1 to 7 above.
Depositing a second insulating layer 800, depositing a first insulating layer 600, respectively obtaining a plurality of exposed holes (a second P electrode through hole 711 and a second N electrode through hole 721) above the first P electrode 710 and the first N electrode 720, depositing corresponding pad electrodes, and obtaining a P pad 910 and an N pad 920 connected with the second P electrode and the second N electrode.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. An LED reflective electrode characterized in that the electrode structure comprises at least a Ti/Ag reflective layer, a barrier layer, an encapsulation layer, a protective layer, the thickness of the Ti layer is 5A-20A, the thickness of the Ag layer is 500A-5000A,
the wrapping layer is an Al composite layer, the Al composite layer comprises a first Al sublayer, a second Al sublayer and a Ti sublayer arranged between the first Al sublayer and the second Al sublayer,
a first isolation layer and a second isolation layer are respectively arranged between the Ti sublayer and the first Al sublayer and between the Ti sublayer and the second Al sublayer,
the thicknesses of the first and second isolation layers are smaller than those of the first Al sublayer and the second Al sublayer;
the first and second isolation layers are made of Ni or Pt,
a third isolating layer is arranged between the first Al sublayer and the first isolating layer, a fourth isolating layer is arranged between the second Al sublayer and the second isolating layer,
the third and fourth isolation layers are made of Cr.
2. The LED reflective electrode of claim 1, wherein the first Al sub-layer and the second Al sub-layer have a thickness from 1000 a to 10000 a;
the thickness of the first and second isolation layers is 100-2000A;
the thickness of the Ti sublayer is 100A-2000A;
the thickness of the first and fourth isolation layers is 5A-50A.
3. The LED reflective electrode of claim 1 wherein the barrier layer comprises any one or combination of Cr, ni, ti, pt layers.
4. The LED reflective electrode of claim 1 wherein the cladding layer is Au or Cu.
5. The LED reflection electrode according to claim 4, wherein the barrier layer is Ni/Pt or Ni/Pt/Ni/Pt or Ti/Pt/Ti/Pt or Ni/Ti/Ni/Ti or Ni/Ti.
6. The LED reflective electrode of claim 1, wherein the protective layer is any one of Cr, ni, ti, and Pt.
7. A flip-chip LED chip comprising a substrate;
the epitaxial layer is formed on the substrate and sequentially comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer;
the first electrode comprises a plurality of first N electrodes connected with the N-type semiconductor layer electrode and a plurality of first P electrodes electrically connected with the P-type semiconductor layer;
the first N electrode and the first P electrode are arranged on the epitaxial layer in a dispersed manner;
the second electrode comprises a second N electrode electrically connected with the first N electrode and a second P electrode electrically connected with the plurality of first P electrodes, and a gap structure is arranged between the second N electrode and the second P electrode;
a pad electrode including an N pad electrically connected to the second N electrode and a P pad electrically connected to the second P electrode,
characterized in that the second electrode is the LED reflective electrode according to any one of claims 1 to 6.
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