CN218166979U - Device for synthesizing high-purity silicon carbide raw material - Google Patents
Device for synthesizing high-purity silicon carbide raw material Download PDFInfo
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- CN218166979U CN218166979U CN202222282311.4U CN202222282311U CN218166979U CN 218166979 U CN218166979 U CN 218166979U CN 202222282311 U CN202222282311 U CN 202222282311U CN 218166979 U CN218166979 U CN 218166979U
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Abstract
The utility model discloses a device for synthesizing high-purity silicon carbide raw materials, which relates to the technical field of silicon carbide production equipment and comprises a graphite cylinder, an upper graphite cover, a lower graphite cover, a graphite column, a heat-insulating material and an induction coil; the upper graphite cover is arranged at the top of the graphite barrel, and the lower graphite cover is arranged at the bottom of the graphite barrel; the graphite column is arranged in the graphite barrel, the top of the graphite column is connected with the upper graphite cover, and the bottom of the graphite column is connected with the lower graphite cover. The utility model provides a be used for synthetic device of high-purity carborundum raw materials, set up a high heat conduction's solid graphite post at the crucible middle part, firstly, can shorten the radial distance of synthetic powder, reach and reduce the temperature gradient purpose, secondly, can be fine with the core of synthetic powder of heat transfer of crucible bottom, reduce synthetic powder radial temperature gradient and axial temperature gradient, through the high-purity carborundum synthesizer after the improvement, can effectual solution core because the low synthesis that leads to of temperature is insufficient, there are black core and knot hard piece scheduling problem.
Description
Technical Field
The utility model relates to a carborundum production facility technical field especially relates to a device that is used for high-purity carborundum raw materials to synthesize.
Background
Silicon carbide (SiC) is a popular material for the third generation semiconductors because of its excellent characteristics such as a large forbidden band width, a high saturated electron mobility, a large breakdown field strength, and a high thermal conductivity. Compared with the second-generation semiconductor material, the third-generation semiconductor silicon carbide (SiC) material has the advantages of higher high temperature and high pressure resistance, high power, high frequency and the like, and is widely applied to industries such as 5G communication, new energy automobiles, photovoltaic inverters and the like.
The existing methods for preparing silicon carbide powder include a liquid phase method, a solid phase method and a gas phase method. Liquid phase methods such as sol-gel method, polymer thermal decomposition method, etc.; solid phase method, carbothermic method, direct reaction of Si and C, etc.; gas phase methods such as chemical vapor deposition, plasma, laser induced methods, and the like.
The self-propagating method is to utilize the self-heat-release synthetic material of chemical reaction, the reaction between silicon powder and carbon powder releases a small amount of heat, the reaction is not maintained to continue at room temperature, and an external heat source needs to be continuously provided. The current mainstream method is an improved self-propagating method, a PVT furnace is adopted to heat a graphite crucible to generate heat, the heat is transmitted from the crucible wall to powder, but because a large number of pores are formed among the powder and the heat conductivity is poor, the heat transfer efficiency of the powder in the crucible is low, large axial and radial temperature gradients exist, the reaction uniformity of the synthetic powder in the production process is poor, and the core part of the synthetic powder is easy to blacken and harden.
Disclosure of Invention
For solving the technical problem, the utility model provides a device for high-purity carborundum raw materials is synthetic improves powder reaction efficiency and temperature degree of consistency to solve the synthetic process core caking and blacken the problem.
In order to achieve the above purpose, the utility model provides a following scheme:
the utility model provides a device for synthesizing high-purity silicon carbide raw materials, which comprises a graphite cylinder, an upper graphite cover, a lower graphite cover, graphite columns, heat insulation materials and an induction coil; the graphite cylinder is of a cylindrical structure without a bottom and a cover; the upper graphite cover is arranged at the top of the graphite barrel, and the lower graphite cover is arranged at the bottom of the graphite barrel; the graphite column is arranged in the graphite barrel, the top of the graphite column is connected with the upper graphite cover, and the bottom of the graphite column is connected with the lower graphite cover; the heat insulation material is arranged on the outer sides of the graphite barrel, the upper graphite cover and the lower graphite cover; the induction coil is arranged on the outer side of the heat insulation material.
Optionally, the upper graphite cover and the lower graphite cover are connected with the graphite barrel through screws.
Optionally, the graphite lid top surface is provided with first caulking groove down, the bottom of graphite post inlay set up in the first caulking groove.
Optionally, the bottom surface of the upper graphite cover is provided with a second caulking groove, the top of the graphite column is inlaid in the second caulking groove, and a reserved space is arranged between the top surface of the graphite column and the bottom of the second caulking groove.
Optionally, the top surface of the upper graphite cover and the bottom surface of the lower graphite cover are both provided with a plurality of bolt holes.
The utility model discloses for prior art gain following technological effect:
the utility model provides a be used for synthetic device of high-purity carborundum raw materials, set up a high heat conduction's solid graphite post at the crucible middle part, firstly, can shorten the radial distance of synthetic powder, reach and reduce the temperature gradient purpose, secondly, can be fine with the core of synthetic powder of heat transfer of crucible bottom, reduce synthetic powder radial temperature gradient and axial temperature gradient, through the high-purity carborundum synthesizer after the improvement, can effectual solution core because the low synthesis that leads to of temperature is insufficient, there are black core and knot hard piece scheduling problem.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the apparatus for synthesizing high-purity silicon carbide raw material according to the present invention.
Description of reference numerals: 1. a screw; 2. a graphite cylinder; 3. mixing the materials; 4. a graphite cover is arranged; 5. a graphite column; 6. a thermal insulation material; 7. an induction coil; 8. and a lower graphite cover.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, the present embodiment provides an apparatus for synthesizing a high-purity silicon carbide raw material, which includes a graphite barrel 2, an upper graphite cover 4, a lower graphite cover 8, a graphite column 5, a thermal insulation material 6, and an induction coil 7; the graphite cylinder 2 is of a cylindrical structure without a bottom and a cover; the upper graphite cover 4 is arranged at the top of the graphite barrel 2, and the lower graphite cover 8 is arranged at the bottom of the graphite barrel 2; the graphite column 5 is arranged in the graphite barrel 2, the top of the graphite column 5 is connected with the upper graphite cover 4, and the bottom of the graphite column 5 is connected with the lower graphite cover 8; the heat insulation material 6 is arranged on the outer sides of the graphite barrel 2, the upper graphite cover 4 and the lower graphite cover 8; the induction coil 7 is arranged outside the heat insulating material 6.
In this embodiment, the thermal insulation material 6 is made of a hard graphite felt, a soft graphite felt, or both of the hard graphite felt and the soft graphite felt.
The upper graphite cover 4 and the lower graphite cover 8 are both connected with the graphite barrel 2 through screws 1. The top and the bottom of a graphite section of thick bamboo 2 set up six screw holes respectively, go up graphite lid 4 and graphite lid 8 down and go up the corresponding through-hole that sets up, pass through the through-hole with screw 1 and twist threaded hole in, will go up graphite lid 4 and graphite lid 8 installation and graphite section of thick bamboo 2 down on. In a more specific embodiment, the screw 1 is made of high temperature resistant material such as isostatic graphite, molded graphite or carbon-carbon composite material.
The center of the top surface of the lower graphite cover 8 is provided with a first caulking groove, and the bottom of the graphite column 5 is embedded and arranged in the first caulking groove.
Go up 4 bottom surface centers of graphite lid department and be provided with the second caulking groove, the top of graphite post 5 is inlayed and is set up in the second caulking groove, and is provided with the headspace between the top surface of graphite post 5 and the bottom of second caulking groove, and heating back graphite post 5 thermal expansion, the headspace can regard as the thermal expansion space of graphite post 5, can avoid the expansion of graphite post 5 to damage graphite lid 4. More specifically, the first caulking groove and the second caulking groove are both cylindrical grooves.
In order to facilitate the graphite barrel 2 to be taken out from the heat insulation material 6, four bolt holes are formed in the top surface of the upper graphite cover 4 and the bottom surface of the lower graphite cover 8.
A mixture 3 composed of silicon powder and carbon powder is contained in the graphite cylinder 2, and the distance between the top of the mixture 3 and the bottom surface of the upper graphite cover 4 is less than 100mm.
The graphite cylinder 2, the upper graphite cover 4, the lower graphite cover 8 and the graphite column 5 are all made of high-purity graphite materials, the purity is higher than 6N, and impurities cannot be brought into the raw materials in the process of synthesizing silicon carbide; the graphite column 5 is made of graphite with the density of more than 1.85g/cm < 3 > and the thermal conductivity of more than 140W/M.K, so that the heat at the bottom can be quickly transmitted to the core part of the device, and the axial and radial temperature gradients in the container are reduced.
The device consisting of the graphite cylinder 2, the upper graphite cover 4, the lower graphite cover 8 and the graphite column 5 is heated by the external induction coil 7 to generate a large amount of heat, and the heat is concentrated on the bottom of the graphite crucible and the wall of the graphite cylinder 2 due to the skin effect. The graphite crucible is externally provided with a heat insulation material 6 to prevent heat loss, the heat is transferred from the crucible wall to the synthetic raw material in the device, and meanwhile, because a large number of gaps exist in the synthetic raw material and the heat cannot be well conducted, a large temperature gradient exists in the radial direction and the axial direction of the raw material in the synthetic process. The utility model discloses increase a solid graphite post 5 of high heat conduction in the middle part of the crucible, firstly can shorten the radial distance of synthetic powder and reach and reduce the temperature gradient purpose, secondly can be fine with the core of synthetic powder of heat transfer of crucible bottom, reduce synthetic powder radial temperature gradient and axial temperature gradient, high-purity carborundum synthesizer after improving can effectual solution core because the low synthesis that leads to of temperature is insufficient, has black core and knot piece scheduling problem.
It should be noted that, as is obvious to a person skilled in the art, the invention is not limited to details of the above-described exemplary embodiments, but can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
The principle and the implementation mode of the present invention are explained by applying specific examples in the present specification, and the above descriptions of the examples are only used to help understanding the method and the core idea of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the concrete implementation and the application scope. In summary, the content of the present specification should not be construed as a limitation of the present invention.
Claims (5)
1. A device for synthesizing a high-purity silicon carbide raw material is characterized by comprising a graphite cylinder, an upper graphite cover, a lower graphite cover, graphite columns, a heat insulation material and an induction coil; the graphite cylinder is of a cylindrical structure without a bottom and a cover; the upper graphite cover is arranged at the top of the graphite barrel, and the lower graphite cover is arranged at the bottom of the graphite barrel; the graphite column is arranged in the graphite barrel, the top of the graphite column is connected with the upper graphite cover, and the bottom of the graphite column is connected with the lower graphite cover; the heat insulation material is arranged on the outer sides of the graphite barrel, the upper graphite cover and the lower graphite cover; the induction coil is arranged on the outer side of the heat insulation material.
2. The apparatus for synthesis of a high purity silicon carbide feedstock according to claim 1, wherein the upper graphite lid and the lower graphite lid are both attached to the graphite barrel by screws.
3. The apparatus according to claim 1, wherein the lower graphite lid has a first slot on its top surface, and the bottom of the graphite pillar is embedded in the first slot.
4. The apparatus for synthesizing high-purity silicon carbide raw material according to claim 1, wherein the bottom surface of the upper graphite cover is provided with a second caulking groove, the top of the graphite column is embedded in the second caulking groove, and a reserved space is arranged between the top surface of the graphite column and the bottom of the second caulking groove.
5. The apparatus for synthesis of a high purity silicon carbide feedstock as claimed in claim 1, wherein a plurality of bolt holes are provided on both the top surface of the upper graphite lid and the bottom surface of the lower graphite lid.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222282311.4U CN218166979U (en) | 2022-08-29 | 2022-08-29 | Device for synthesizing high-purity silicon carbide raw material |
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| CN202222282311.4U CN218166979U (en) | 2022-08-29 | 2022-08-29 | Device for synthesizing high-purity silicon carbide raw material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116623284A (en) * | 2023-05-30 | 2023-08-22 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116623284A (en) * | 2023-05-30 | 2023-08-22 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
| CN116623284B (en) * | 2023-05-30 | 2024-02-23 | 江苏超芯星半导体有限公司 | Silicon carbide and growth device and growth method thereof |
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