CN218161214U

CN218161214U - Semiconductor laser device

Info

Publication number: CN218161214U
Application number: CN202222348757.2U
Authority: CN
Inventors: 吴梦迪
Original assignee: Wuhan Raycus Fiber Laser Technologies Co Ltd
Current assignee: Wuhan Raycus Fiber Laser Technologies Co Ltd
Priority date: 2022-09-01
Filing date: 2022-09-01
Publication date: 2022-12-27
Anticipated expiration: 2032-09-01

Abstract

The application provides a semiconductor laser, which comprises a device shell, a plurality of chip sealing units, a plurality of slow-axis collimating lenses, a plurality of reflectors, a focusing lens and an output optical fiber, wherein each chip sealing unit comprises a semiconductor chip, a fast-axis collimating lens and a window sheet which are sequentially and correspondingly arranged, and the semiconductor chip and the fast-axis collimating lens are sealed in the chip sealing units by the window sheets; a plurality of steps are arranged in the device shell, each chip sealing unit, each slow axis collimating lens and each reflector are arranged on each step, and the window sheet, the slow axis collimating lens and the reflector on the same step are sequentially and correspondingly arranged; the output optical fiber penetrates through the device shell, the focusing lens is arranged in the device shell, one surface of the focusing lens is arranged corresponding to the plurality of reflectors, and the other surface of the focusing lens is arranged corresponding to the output optical fiber; by arranging the semiconductor chip in the chip sealing unit, the semiconductor chip can work in a sealed and stable environment, the service life of the chip is prolonged, and the reliability of the laser is improved.

Description

Semiconductor laser device

Technical Field

The application relates to the technical field of lasers, in particular to a semiconductor laser.

Background

Semiconductor lasers are devices that generate laser light by using a certain semiconductor material as a working substance. The operating principle is that the population inversion of non-equilibrium carriers is realized between energy bands (conduction band and valence band) of semiconductor substances or between energy bands of semiconductor substances and energy levels of impurities (acceptor or donor) through a certain excitation mode, and when a large number of electrons in the population inversion state are compounded with holes, stimulated emission action is generated.

With the increasing power demand of semiconductor laser devices, the number of internal chips is increasing, and the size of the devices is also increasing, and at the same time, the internal environment (temperature, humidity, organic volatile matters) of the devices becomes more and more difficult to control, which directly affects the service life and reliability of the chips. How to improve the service life and reliability of a semiconductor laser is a problem which needs to be solved urgently at present.

SUMMERY OF THE UTILITY MODEL

The application provides a semiconductor laser, aims at improving semiconductor laser's life and reliability.

In order to achieve the above object, the present application provides a semiconductor laser, including a device housing, a plurality of chip sealing units, a plurality of slow-axis collimating lenses, a plurality of reflectors, a focusing lens, and an output optical fiber, where each of the chip sealing units includes a semiconductor chip, a fast-axis collimating lens, and a window sheet, which are correspondingly disposed in sequence, and the window sheet seals the semiconductor chip and the fast-axis collimating lens in the chip sealing unit; a plurality of steps are arranged in the device shell, each chip sealing unit, each slow-axis collimating lens and each reflector are arranged on each step, and the window sheet, the slow-axis collimating lens and the reflector on the same step are sequentially and correspondingly arranged; the output optical fiber penetrates through the device shell, the focusing lens is arranged in the device shell, one surface of the focusing lens corresponds to the plurality of reflectors, and the other surface of the focusing lens corresponds to the output optical fiber.

Each chip sealing unit further comprises a unit base, a unit cover plate and a unit pin, wherein the unit base is provided with a cavity and is provided with a light-emitting window, and the unit cover plate and the window sheet are respectively covered on the unit base and the light-emitting window so as to seal the cavity; the semiconductor chip and the fast axis collimating lens are arranged in the cavity, and the unit pins penetrate through the unit base and then stretch into the cavity and are electrically connected with the semiconductor chip.

The window sheet is fixed on the light outlet window through solder.

Wherein the semiconductor chip is fixed on the bottom of the cavity by solder.

The semiconductor laser further comprises a power supply pin and a plurality of sections of wires, the power supply pin penetrates through the device shell, and the plurality of sections of wires are used for sequentially connecting the power supply pin with the plurality of unit pins of the chip sealing unit in series.

Each chip sealing unit further comprises a screw, the unit base is further provided with an installation part, a through hole is formed in the installation part, each step is further provided with a fixing screw hole, and each screw penetrates through the through hole and then is fixed in each fixing screw hole so as to fix each chip sealing unit on each step.

The device shell comprises a device base and a device cover plate, wherein the device base is provided with a cavity, and the steps are located in the cavity; the device cover plate covers the device base to seal the cavity.

And a heat-conducting medium is arranged between each chip sealing unit and each step.

Wherein, still be provided with heat radiation structure outside the device casing.

Wherein the power range of the output laser of the semiconductor laser is 5W-1000W.

The beneficial effect of this application does: the application provides a semiconductor laser, including device casing, a plurality of chip seal unit, a plurality of slow axis collimating lens, a plurality of speculum, focusing lens and output fiber, every the chip seal unit is including corresponding semiconductor chip, fast axis collimating lens and the window piece that sets up in proper order, the window piece will semiconductor chip with fast axis collimating lens seals in the chip seal unit; a plurality of steps are arranged in the device shell, each chip sealing unit, each slow-axis collimating lens and each reflector are arranged on each step, and the window sheet, the slow-axis collimating lens and the reflector on the same step are sequentially and correspondingly arranged; the output optical fiber penetrates through the device shell, the focusing lens is arranged in the device shell, one surface of the focusing lens is arranged corresponding to the plurality of reflectors, and the other surface of the focusing lens is arranged corresponding to the output optical fiber; the semiconductor chip is arranged in the chip sealing unit, so that the semiconductor chip can work in a locally sealed and relatively stable environment, the service life of the chip is prolonged, and the reliability of the whole device is improved.

Drawings

In order to more clearly illustrate the technical solutions of the present application, the drawings needed to be used in the description of the embodiments according to the present application will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained from the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a semiconductor laser provided herein;

FIG. 2 is a schematic diagram of the semiconductor laser of FIG. 1 with the device cover removed;

FIG. 3 is a schematic structural diagram of a chip sealing unit provided in the present application;

fig. 4 is a schematic view of the chip sealing unit of fig. 3 with the unit cover removed.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be apparent that the described embodiments are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.

In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In this application, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation of the first and second features not being in direct contact, but being in contact with another feature between them. Also, the first feature "on," "above" and "over" the second feature may include the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present disclosure, and as shown in fig. 1, the semiconductor laser 10 includes a device housing 11, and the device housing 11 includes a device base 111 and a device cover 112. To further describe the structure of the semiconductor laser 10 in the embodiment of the present application, please refer to fig. 2, fig. 2 is a schematic structural diagram of the semiconductor laser 10 shown in fig. 1 with the device cover 112 removed, and as shown in fig. 2, the semiconductor laser 10 further includes a plurality of chip sealing units 12, a plurality of slow-axis collimating lenses 13, a plurality of reflecting mirrors 14, a focusing lens 15, and an output optical fiber 16. A plurality of steps 1111 are disposed in the device housing 11, the device base 111 is disposed with the cavity 110, the plurality of steps 1111 are disposed in the cavity 110, and the device cover plate 112 covers the device base 111 to seal the cavity 110. Each chip sealing unit 12, each slow-axis collimator lens 13, and each mirror 14 are disposed on each step 1111.

Referring to fig. 3, fig. 3 is a schematic structural diagram of a chip sealing unit according to an embodiment of the present disclosure, in which each chip sealing unit 12 includes a unit base 121, a unit cover plate 122, a window piece 123, and unit pins 124. To further illustrate the structure of the chip sealing unit 12 in the embodiment of the present application, please refer to fig. 4, fig. 4 is a schematic structural diagram of the chip sealing unit 12 after the unit cover plate 122 is removed in fig. 3, as shown in fig. 3, the chip sealing unit 12 further includes a semiconductor chip 125 and a Fast Axis Collimation lens 126 (FAC), in each chip sealing unit 12, the semiconductor chip 125, the Fast Axis Collimation lens 126 and a window plate 123 are sequentially and correspondingly disposed, the Fast Axis Collimation lens 126 is configured to Fast-Axis collimate a light beam emitted by the semiconductor chip 125 and output the light beam from the inside of the chip sealing unit 12 through the window plate 123, and the window plate 123 further seals the semiconductor chip 125 and the Fast Axis Collimation lens 126 in the chip sealing unit 12.

In the semiconductor laser 10, an output optical fiber 16 is inserted into a device case 11, a focusing lens 15 is provided in the device case 11, a window plate 123, a Slow Axis Collimation lens 13 (SAC) and a reflecting mirror 14 are provided in this order in correspondence on the same step 1111, one surface of the focusing lens 15 is provided in correspondence with the plurality of reflecting mirrors 14, and the other surface is provided in correspondence with the output optical fiber 16. In the semiconductor laser 10 provided in the embodiment of the present application, since the semiconductor chip 125 is sealed in the chip sealing unit 12, the semiconductor chip 125 can operate in a locally sealed and relatively stable environment, so as to prolong the service life of the chip and improve the reliability of the whole device.

Specifically, the steps 1111 have a height difference, laser light generated by each semiconductor chip 125 sequentially passes through the fast axis collimating lens 126, each window 123 and each slow axis collimating lens 13, and then becomes parallel beams which are sequentially arranged from high to low and are parallel to each other, each parallel beam is reflected by each reflector 14 and then spatially combined into a parallel beam cluster, and the parallel beam cluster passes through the focusing lens 15 and then couples beam energy into the output optical fiber 16 to be output.

As shown in fig. 4, the unit base 121 is provided with a cavity 1210 and an exit window (not shown), the semiconductor chip 125 and the fast axis collimating lens 126 are disposed in the cavity 1210, and the unit pins 124 penetrate through the unit base 121 and then extend into the cavity 1210, and are electrically connected to the semiconductor chip 125. Specifically, the cell pin 124 includes a positive cell pin and a negative cell pin, which are electrically connected to the positive electrode and the negative electrode of the semiconductor chip 125, respectively. As shown in fig. 3, the unit cover 122 and the window sheet 123 cover the unit base 121 and the light exit window, respectively, to seal the cavity 1210.

In one embodiment, the window sheet 123 is fixed on the light-emitting window by solder, optionally, the solder may be glass solder or metal solder, and the window sheet 123 is fixed by the selected solder, while the window sheet 123 is prevented from being adhered and fixed by the selected glue, so as to prevent the organic matter in the glue from volatilizing to affect the service life of the semiconductor chip 125.

In one embodiment, the semiconductor chip 125 is fixed to the bottom of the cavity 1210, for example, by selecting solder to fix the semiconductor chip 125 to the bottom of the cavity 1210, and selecting glue to fix the semiconductor chip 125 in an adhesive manner is avoided, so that the working life of the semiconductor chip 125 is prevented from being affected by volatilization of organic matters in the glue.

Referring to fig. 2, the semiconductor laser 10 further includes a power supply pin 17 and a plurality of conductive wires 18, the power supply pin 17 penetrates through the device housing 11, and the plurality of conductive wires 18 sequentially connect the power supply pin 17 in series with the unit pins 124 of the plurality of chip sealing units 12. Specifically, the power supply pin 17 is divided into a positive power supply pin and a negative power supply pin, and the power supply pin 17 is electrically connected to the unit pin 124 of the chip sealing unit 12 through the wire 18 in the cavity 110, and is electrically connected to a power supply (not shown) outside the cavity 110.

Referring to fig. 4, each chip sealing unit 12 further includes a screw (not shown), the unit base 121 further includes a mounting portion 1211, and the mounting portion 1211 is formed with a through hole 12110. Fixing screw holes (not shown in fig. 2) are further provided in each step 1111, and each screw is fixed to each fixing screw hole after passing through the through hole 12110 to fix each chip sealing unit 12 to each step 1111. Specifically, the through hole 12110 may be a counter-bore.

It should be noted that, because a certain amount of heat is generated during the light emitting process of the semiconductor chip 125, if the heat is not dissipated in time, the temperature of the semiconductor chip 125 may increase, which affects the output power, the threshold current density, the electro-optical conversion efficiency, the differential quantum efficiency, the polarization degree, and other properties of the semiconductor laser 10, and may cause the lifetime and reliability of the semiconductor laser 10 to decrease, or even damage the chip. Therefore, in one embodiment, a heat sink material is further disposed between the semiconductor chip 125 and the bottom of the cavity 1210, and optionally, the heat sink material may be aluminum nitride, aluminum oxide, diamond, or the like. In one embodiment, a heat conducting medium is disposed between each chip sealing unit 12 and each step 1111. By arranging the heat sink material and the heat conducting medium, the heat generated by the semiconductor chip 125 is transferred to the unit base 121 through the heat sink material, the heat on the unit base 121 can be diffused to the step 1111 of the device base 111 through the heat conducting medium, and the device base 111 is cooled by external water or air.

In one embodiment, a heat dissipation structure (not shown) is disposed outside the device housing 11 to cool and dissipate heat of the device base 111. In one embodiment, the heat dissipation structure includes heat dissipation fins mounted on an outer surface of the device case 11 to increase a heat dissipation area, and a heat dissipation fan mounted on the heat dissipation fins. In another embodiment, the heat dissipation structure includes a water cooled plate and a water cooler.

The power of the laser light output by the semiconductor laser 10 ranges from 5W to 1000W, and varies according to the power and the number of the semiconductor chips 125.

The foregoing detailed description is directed to a semiconductor laser provided in an embodiment of the present application, and a specific example is applied in the detailed description to explain the principles and embodiments of the present application, where the foregoing description of the embodiment is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation manner and the application scope may be changed, and in summary, the content of the present specification should not be construed as a limitation to the present application. Moreover, it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present application and these modifications and adaptations are intended to be within the scope of the present application.

Claims

1. A semiconductor laser is characterized by comprising a device shell, a plurality of chip sealing units, a plurality of slow-axis collimating lenses, a plurality of reflectors, a focusing lens and an output optical fiber, wherein each chip sealing unit comprises a semiconductor chip, a fast-axis collimating lens and a window sheet which are sequentially and correspondingly arranged, and the semiconductor chip and the fast-axis collimating lens are sealed in the chip sealing units by the window sheets;

a plurality of steps are arranged in the device shell, each chip sealing unit, each slow-axis collimating lens and each reflector are arranged on each step, and the window sheet, the slow-axis collimating lens and the reflector on the same step are sequentially and correspondingly arranged;

the output optical fiber penetrates through the device shell, the focusing lens is arranged in the device shell, one surface of the focusing lens corresponds to the plurality of reflectors, and the other surface of the focusing lens corresponds to the output optical fiber.

2. The semiconductor laser according to claim 1, wherein each of the chip sealing units further comprises a unit base, a unit cover plate and a unit pin, the unit base is provided with a cavity and is opened with an exit window, and the unit cover plate and the window plate respectively cover the unit base and the exit window to seal the cavity;

the semiconductor chip and the fast axis collimating lens are arranged in the cavity, and the unit pins penetrate through the unit base and then extend into the cavity and are electrically connected with the semiconductor chip.

3. A semiconductor laser as claimed in claim 2 wherein the window plate is secured to the light exit window by solder.

4. A semiconductor laser as claimed in claim 2 wherein the semiconductor chip is secured to the bottom of the cavity by solder.

5. The semiconductor laser as claimed in claim 2 further comprising a power pin and a plurality of segments of wires, wherein the power pin penetrates through the device housing, and the plurality of segments of wires connect the power pin in series with the unit pins of the plurality of chip sealing units.

6. The semiconductor laser as claimed in claim 2, wherein each of the chip sealing units further comprises a screw, the unit base further comprises a mounting portion, the mounting portion has a through hole, each step has a fixing screw hole, and each screw passes through the through hole and is fixed in each fixing screw hole to fix each chip sealing unit on each step.

7. The semiconductor laser of claim 1, wherein the device housing comprises a device base and a device cover, the device base being provided with a cavity, the plurality of steps being located within the cavity; the device cover plate covers the device base to seal the cavity.

8. The semiconductor laser of claim 1, wherein a heat conducting medium is disposed between each of the chip sealing units and each of the steps.

9. The semiconductor laser of claim 1, wherein a heat dissipation structure is further disposed outside the device housing.

10. The semiconductor laser of claim 1, wherein the power of the output laser light of the semiconductor laser is in the range of 5W to 1000W.