CN218122296U - Multi-mode switching 1X 3 optical switch - Google Patents
Multi-mode switching 1X 3 optical switch Download PDFInfo
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- CN218122296U CN218122296U CN202222061414.8U CN202222061414U CN218122296U CN 218122296 U CN218122296 U CN 218122296U CN 202222061414 U CN202222061414 U CN 202222061414U CN 218122296 U CN218122296 U CN 218122296U
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Abstract
The utility model discloses a 1X 3 photoswitch that multi-mode switches. Arranging five parallel strip-shaped straight waveguides on a substrate, wherein three waveguides are Si waveguides, and two waveguides are composite waveguides of a phase-change material film and Si, so as to form a single straight waveguide region, an uplink coupling waveguide region and a downlink coupling waveguide region; the switch unit is controlled by a phase-change material film covering the waveguide in the coupling area of the optical switch, three-way gating and mode switching of a basic mode, a first-order mode and a second-order mode can be respectively carried out on an input electromagnetic field basic mode by three strip waveguides by switching the phase state of the phase-change film, and the optical switch switching function of mode separation and multiplexing is realized. The utility model has the characteristics of mode gating, integrated level height, small and switching rate height.
Description
Technical Field
The utility model belongs to the technical field of optoelectronics, in particular to 1 x 3 optical waveguide switch of multimode reconsitution and switching.
Background
The optical switch is a core unit for mode multiplexing and data exchange, and the core components for switching optical transmission in the current silicon-based optical waveguide switch are mainly Mach-Zehnder interferometer type (see Lin Y, zhou T, hao J, et al, general architecture for on-chip optical space and mode switching [ J ]. Optica, 2018, 5 (2): 180.) based on the optical interference principle and micro-ring resonator principle type (see Nikolova D, calhoun D M, liu Y, rumley S, et al, modal architecture for full non-blocking silicon switching optical subsystems and Nanoengining 3-9 switching 16071, 2017). They form a phase difference mainly by electro-optical modulation of the refractive index change caused by applying a voltage to the interference arms. However, the refractive index modulation is weak, which causes the device to be oversized, and the state needs continuous voltage to maintain, so that the device has volatility.
With the search for optical switching devices, optical switches based on phase change materials have emerged. The phase change material is covered on the waveguide to form a composite waveguide, the phase change material can be reversibly changed in phase in crystalline state and amorphous state, and a great refractive index difference can be formed before and after the phase change to change the propagation path of the optical signal. The phase-change material film is used for a phase-shift unit of the optical waveguide switch to replace an interference arm, and a reconfigurable mode multiplexing optical waveguide switch unit device is manufactured and gradually emerges. The phase change material is covered on the silicon-based strip waveguide to form a composite waveguide, and the phase change material forms huge refractive index difference before and after reversible complex phase change and phase change of crystalline state and amorphous state to change the propagation path of the optical signal. Currently, the structure of 1X 3 Optical waveguide Switch using a Phase Change material film combined with a silicon substrate can be found (see He, jie, junbo Yang, hansi Ma, et al. Design of a Multi-Functional Integrated Optical Switch base on Phase Change Materials, photonics 2022, 9 (320): 1-13.), and this structure includes three long waveguides, two of which are curved waveguides. The curved waveguide is prone to cause greater optical loss and crosstalk, and increases the experimental difficulty of the device, so that the greater multiplexing and integration degree of the optical switch is also limited, and further development and utilization are still needed.
Disclosure of Invention
The utility model discloses to the not enough that prior art exists, provide a 1X 3 optical waveguide switch based on chalcogenide phase change film's multi-mode switching, realize single advance-the function that input, gate and mode switched wantonly is selected to the multichannel of three plays, have high extinction ratio, the size is little, switching rate characteristics such as fast.
The technical scheme of the utility model is to provide a 1X 3 optical switch of multi-mode switching, including substrate (9), si waveguide and composite waveguide, its structure includes that the single straight waveguide region that comprises well-moving Si straight waveguide sets up in the middle of the optical switch, one side is the up coupling waveguide region that comprises up-moving Si straight waveguide and up-moving composite waveguide, the other side is the down coupling waveguide region that comprises down composite waveguide and down Si straight waveguide;
the waveguides are mutually parallel, the distance is 100-200 nanometers, the Si straight waveguides and the composite waveguides are distributed at intervals, the uplink composite waveguide is positioned at the front end region of the middle-row Si straight waveguide, and the downlink composite waveguide is positioned at the rear end region of the middle-row Si straight waveguide;
the optical input port and the fundamental mode output port of the optical wave are respectively arranged at the front end and the rear end of the middle-row Si straight waveguide; the first-order mode output port of the optical wave is arranged at the rear end of the uplink Si straight waveguide; the second-order mode output port of the optical wave is arranged at the rear end of the downlink Si straight waveguide;
the up composite waveguide and the down composite waveguide are formed by depositing or covering a layer of phase change material film on the Si waveguide.
The 1X 3 optical switch with multi-mode switching is characterized in that the thickness of the line Si straight waveguide, the thickness of the uplink Si straight waveguide and the thickness of the downlink Si straight waveguide are 100-400 nanometers, the widths of the uplink Si straight waveguide, the uplink Si straight waveguide and the downlink Si straight waveguide are 200-600 nanometers, 600-1100 nanometers and 1100-1900 nanometers respectively, and the lengths of the uplink Si straight waveguide, the uplink Si straight waveguide and the downlink Si straight waveguide are 10-80 micrometers, 20-80 micrometers and 10-30 micrometers respectively.
The 1X 3 optical switch with multi-mode switching has the width of the uplink composite waveguide and the downlink composite waveguide of 200-600 nanometers and the length of 5-30 micrometers; the thickness of Si waveguide is 100-400 nm, and the thickness of phase-change material film is 10-100 nm.
The utility model discloses among the technical scheme, the photoswitch has utilized the phase transition characteristic of sulphide phase transition film, realizes the selectivity output of three kinds of routes of light wave mode for the basic mode of horizontal electric mode (TE) or horizontal magnetic mode (TM), first order mode and second order mode can switch wantonly. The effective index of a mode in a waveguide is closely related to the size of the waveguide. The effective refractive indexes of the fundamental mode and the high-order mode are gradually increased along with the increase of the waveguide width, and the waveguide width of the high-order mode needs to be larger under the condition that the effective refractive indexes are the same. The dimensions of the strip waveguide are determined by the dispersion curve of the polarization mode. The utility model provides a 1X 3 photoswitch structure comprises three silica-based waveguides and two phase change film composite waveguide, wherein has two three waveguide directional couplers, has all contained three kinds of supermodes of A, B and C. After the waveguide size is determined, the coupling distance and the optimal coupling length can be determined according to the principle that mode conduction meets the three-waveguide phase matching condition, namely, the effective refractive indexes of three supermodes need to meet the following conditions:
in the formula, N A ，N B And N C The effective refractive indexes of three supermodes of A, B and C.
The optimal coupling length of the three waveguides meets the following conditions:
wherein Lc is the coupling length,λis the operating wavelength.
Compared with the prior art, the beneficial effects of the utility model reside in that:
1. the utility model deposits the strip-shaped Si waveguide and the chalcogenide phase-change film on SiO through etching 2 A single-in-three-out full-straight waveguide type optical switch is formed on the substrate, the waveguide switch has a mode selection function, and the strip-shaped straight waveguide structure greatly reduces the experiment difficulty and improves the efficiency.
2. The utility model provides a 1X 3 photoswitch of multimode switch, when the phase transition film in compound waveguide of ascending or compound waveguide of descending is the low-loss amorphous state of low-emissivity, and when satisfying the best coupling length, the light wave mode can be exported with the first order mode form in the straight waveguide of ascending Si, or export with the second order mode form in the straight waveguide of descending Si; when the phase change films in the two composite straight waveguides are both crystalline with high refractive index, the input fundamental mode light wave is transmitted to the output port along the straight waveguide of the input port, and the functions of single-input-three-output multi-channel selection input, gating and mode arbitrary switching are realized.
Drawings
Fig. 1 is a schematic top view of a 1 × 3 optical waveguide switch structure based on multi-mode switching according to an embodiment of the present invention;
fig. 2 is a schematic side-view perspective view of a 1 × 3 optical waveguide switch structure based on multi-mode switching according to an embodiment of the present invention;
in the figure, 1, a single straight waveguide region; 2. an upstream coupling waveguide region; 3. a downstream coupling waveguide region; 4. an uplink Si straight waveguide; 5. an upstream composite waveguide; 6. a middle-row Si straight waveguide; 7. a downstream composite waveguide; 8. a downstream Si straight waveguide; 9. a silicon dioxide substrate; 10. a Si waveguide in the composite waveguide; 11. a phase change material film in the composite waveguide; 12. an optical input port; 13. a fundamental mode output port of the optical wave; 14. a first-order mode output port of the optical wave, or called an uplink output port; 15. and a second-order mode output port of the optical wave, or called a downlink output port.
Fig. 3 is a dispersion curve and a light wave mode field distribution diagram of the effective refractive index of a light wave mode in a 1 × 3 light waveguide switch structure based on multi-mode switching according to an embodiment of the present invention.
Fig. 4 is a diagram illustrating a distribution of optical intensity when a TE mode is input from the optical input port 12 and output from the fundamental mode output port 13 of an optical wave in a 1 × 3 optical waveguide switch structure based on multi-mode switching according to an embodiment of the present invention.
Fig. 5 is a diagram illustrating a light intensity distribution of a 1 × 3 optical waveguide switch structure based on multi-mode switching when a TE mode is input from the optical input port 12 and output from the first-order mode output port 14 of the uplink waveguide coupling region according to an embodiment of the present invention.
Fig. 6 is a diagram illustrating a light intensity distribution when a TE mode is input from the optical input port 12 and output from the second-order mode output port 15 of the down waveguide coupling region in a 1 × 3 optical waveguide switch structure based on multi-mode switching according to an embodiment of the present invention.
Fig. 7 is an extinction ratio and insertion loss curve when TE mode is input from the optical input port 12 and output from the output port 13 of the fundamental mode in the 1 × 3 optical waveguide switch structure based on multi-mode switching according to the embodiment of the present invention.
Fig. 8 is an extinction ratio and insertion loss curve when TE mode is input from the optical input port 12 and output from the first-order mode output port 14 of the uplink waveguide coupling region in the 1 × 3 optical waveguide switch structure based on multi-mode switching according to the embodiment of the present invention.
Fig. 9 is an extinction ratio and insertion loss curve when TE mode is input from the optical input port 12 and output from the second-order mode output port 15 of the down waveguide coupling region in the 1 × 3 optical waveguide switch structure based on multi-mode switching according to the embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be further explained with reference to the drawings and the embodiments.
Example 1
The utility model provides a 1X 3 optical waveguide switch comprises five parallel arrangement's the straight waveguide of bar, and wherein three are the Si waveguide, and two are phase change material film and the compound waveguide of Si, can divide into three region.
Referring to fig. 1 and 2, a schematic top view and a schematic perspective view of a 1 × 3 optical waveguide switch structure provided in this embodiment are shown, respectively; the silicon dioxide substrate 9 is provided with a Si waveguide and a composite waveguide, and the specific structure is as follows: the single straight waveguide region 1 composed of the middle line Si straight waveguide 6 is arranged in the middle of the optical switch, one side is an uplink coupling waveguide region 2 composed of an uplink Si straight waveguide 4 and an uplink composite waveguide 5, and the other side is a downlink coupling waveguide region 3 composed of a downlink composite waveguide 7 and a downlink Si straight waveguide 8.
The optical input port 12 and the fundamental mode output port 13 of the optical wave are respectively positioned at the front end and the rear end of the middle-row Si straight waveguide 6; the first-order mode output port 14 of the optical wave is positioned at the rear end of the uplink Si straight waveguide 4; the second-order mode output port 15 of the optical wave is located at the rear end of the downstream Si straight waveguide 8.
The waveguides are parallel to each other, the distance is 100-200 nanometers, the Si straight waveguides and the composite waveguides are distributed at intervals, the uplink composite waveguide 5 is positioned at the front end region of the middle-line Si straight waveguide 6, and the downlink composite waveguide 7 is positioned at the rear end region of the middle-line Si straight waveguide 6.
As can be seen from fig. 2, the uplink composite waveguide 5 and the downlink composite waveguide 7 are formed by depositing or covering a layer of phase change material film 11 on the Si waveguide 10.
The utility model provides a 1X 3 optical waveguide switch, wherein go up the thickness of the straight waveguide of Si 6, go up the straight waveguide of Si 4 and the straight waveguide of down Si 8 and be 100 ~ 400 nanometers, the width is 200 ~ 600 nanometers, 600 ~ 1100 nanometers and 1100 ~ 1900 nanometers respectively, and the length is 10 ~ 80 microns, 20 ~ 80 microns and 10 ~ 30 microns respectively. The width of the uplink composite waveguide 5 and the downlink composite waveguide 7 is 200-600 nanometers, and the length is 5-30 micrometers; the thickness of the Si waveguide 10 is 100-400 nm, and the thickness of the phase change material film 11 is 10-100 nm.
The 1 × 3 optical waveguide switch structure provided in this embodiment can change the output mode of the optical signal and select an output port according to the phase state of the phase change material film of the composite waveguide in the uplink or downlink region.
In this example, the calculation results obtained for each waveguide are determined by the following conditions: the thickness of the Si straight waveguides in the three Si straight waveguides and the two composite waveguides is 300 nanometers; the widths of the middle-row Si straight waveguide 6, the upper-row Si straight waveguide 4 and the lower-row Si straight waveguide 8 are respectively 400 nanometers, 832 nanometers and 1263 nanometers; the width of each of the two composite waveguides is 370 nanometers, the thickness of the sulfide phase change material layer is 65 nanometers, the length of the uplink composite waveguide 5 is 20.5 micrometers, and the length of the downlink composite waveguide 7 is 21.5 micrometers; the distance between the five straight waveguides is 150 nanometers. The overall device width was 3.5 microns and the length was 50 microns.
The 1 × 3 optical waveguide switch provided in this example is prepared by first preparing SiO 2 Covering a photoresist on a substrate material, and preparing a Si waveguide with 3 Si straight waveguides and 2 composite waveguides on the substrate by adopting a focused electron beam exposure process; carrying out photoresist spin coating on the obtained waveguide structure, carrying out electron beam exposure on the Si waveguide of the composite waveguide, and depositing a multi-element sulfide phase-change film with the thickness of 10-300 nanometers on the waveguide structure by adopting a magnetron sputtering process, wherein the sulfide target material can be composed of two or more elements of Ge, sb, se and Te according to a ratio; and stripping the photoresist to obtain the 1 x 3 all-straight waveguide optical waveguide switch device.
Referring to fig. 3, the present embodiment provides a dispersion curve and an optical mode field distribution diagram of the effective refractive index of an optical mode in a 1 × 3 optical waveguide switch structure based on multimode switching as a function of the waveguide width. In the figure, curves 1,2 and 3 are dispersion curves of a zeroth-order fundamental mode, a first-order mode and a second-order mode excited in the waveguide in the case of TE lightwave input of a transverse electric mode, respectively. Under the condition of meeting the requirement of the super-mode effective refractive index matching, the larger the size of the waveguide is, the more the number of modes can be excited. As can be seen from fig. 3, at 1550 nm, when the effective refractive index is 2.466, the width of the Si waveguide corresponding to the fundamental mode is 400 nm, the width of the first-order mode is 832 nm, and the width of the second-order mode is 1263 nm. The diagrams a, b and c in fig. 3 correspond to the mode field distribution diagrams of the zeroth order fundamental mode, the first order mode and the second order mode, i.e., the energy distribution diagrams, respectively.
Referring to fig. 4, it is the present embodiment that provides a light intensity distribution diagram when the TE mode is input from the optical input port 12 and output from the fundamental mode output port 13 of the lightwave based 1 × 3 optical waveguide switch structure based on multi-mode switching. At this time, the phase change materials in the uplink composite waveguide 5 and the downlink composite waveguide 7 are both crystalline, and the output of the fundamental mode output port 13 of the optical wave is a zero-order fundamental mode.
Referring to fig. 5, it is the present embodiment that provides the optical intensity distribution diagram of the 1 × 3 optical waveguide switch structure based on multi-mode switching when the TE mode is input from the optical input port 12 and output from the upstream output port 14. At this time, the phase change material in the uplink composite waveguide 5 is in an amorphous state, the phase change material in the downlink composite waveguide 7 is in a crystalline state, the uplink coupling waveguide region 2 meets the supermode coupling condition, and the output of the uplink output port 14 is in a first-order mode.
Referring to fig. 6, it is the present embodiment that provides a 1 × 3 optical waveguide switch structure based on multi-mode switching, and the light intensity distribution diagram is when the TE mode is input from the optical input port 12 and output from the downstream port 15. At this time, the phase change material in the uplink composite waveguide 5 is in a crystalline state, the phase change material in the downlink composite waveguide 7 is in an amorphous state, the downlink coupling waveguide region 3 meets the condition of supermode coupling, and the output of the downlink output port 15 is a second-order mode.
Referring to fig. 7, the present embodiment provides extinction ratio and insertion loss curves when TE mode is input from the optical input port 12 and output from the fundamental mode output port 13 of the optical wave in the 1 × 3 optical waveguide switch structure based on multi-mode switching. Curve 1 is the extinction ratio and curve 2 is the insertion loss. At this time, the phase change materials in the uplink composite waveguide 5 and the downlink composite waveguide 7 are both crystalline, and the corresponding output ports are zero-order fundamental modes; the extinction ratio and insertion loss of the optical switch at 1550 nm of the optical communication band are 16.19dB and 1.19dB, respectively.
Referring to fig. 8, it is shown the extinction ratio and insertion loss curve when TE mode is input from the optical input port 12 and output from the uplink output port 14 in the 1 × 3 optical waveguide switch structure based on multi-mode switching provided in this embodiment. Curve 1 is the extinction ratio and curve 2 is the insertion loss. At this time, the phase-change material in the uplink composite waveguide 5 is in an amorphous state, the phase-change material in the downlink composite waveguide 7 is in a crystalline state, the uplink coupling waveguide region 2 meets the supermode coupling condition, and the output port of the uplink output port 14 is in a first-order mode; at 1550 nm of the optical communication band, the extinction ratio and the insertion loss of the optical switch are 17.2dB and 0.148dB, respectively.
Referring to fig. 9, the present embodiment provides extinction ratio and insertion loss curves when TE mode is input from the optical input port 12 and output from the downstream port 15 in the 1 × 3 optical waveguide switch structure based on multi-mode switching. Curve 1 is the extinction ratio and curve 2 is the insertion loss. At this time, the phase-change material in the uplink composite waveguide 5 is in a crystalline state, the phase-change material in the downlink composite waveguide 7 is in an amorphous state, the downlink coupling waveguide region 3 meets the condition of supermode coupling, and the output of the downlink output port 15 is a second-order mode; the extinction ratio and insertion loss of the optical switch are 16.19dB and 0.71dB, respectively, at 1550 nm, which is the optical communication band.
Claims (3)
1. A multimode-switched 1 x 3 optical switch comprising a substrate (9), a Si waveguide and a composite waveguide, characterized in that: a single straight waveguide region (1) composed of middle-line Si straight waveguides (6) is arranged in the middle of the optical switch, one side of the single straight waveguide region is an uplink coupling waveguide region (2) composed of an uplink Si straight waveguide (4) and an uplink composite waveguide (5), and the other side of the single straight waveguide region is a downlink coupling waveguide region (3) composed of a downlink composite waveguide (7) and a downlink Si straight waveguide (8);
the waveguides are parallel to each other, the distance is 100-200 nanometers, the Si straight waveguides and the composite waveguides are distributed at intervals, the uplink composite waveguide (5) is positioned at the front end region of the middle-line Si straight waveguide (6), and the downlink composite waveguide (7) is positioned at the rear end region of the middle-line Si straight waveguide (6);
the optical input port (12) and the fundamental mode output port (13) of the light wave are respectively arranged at the front end and the rear end of the middle-row Si straight waveguide (6); a first-order mode output port (14) of the optical wave is arranged at the rear end of the uplink Si straight waveguide (4); a second-order mode output port (15) of the optical wave is arranged at the rear end of the downlink Si straight waveguide (8);
the uplink composite waveguide (5) and the downlink composite waveguide (7) are formed by depositing or covering a layer of phase change material film (11) on the Si waveguide (10).
2. A multimode switched 1 x 3 optical switch according to claim 1, characterized in that: the thickness of the middle Si straight waveguide (6), the up Si straight waveguide (4) and the down Si straight waveguide (8) is 100-400 nanometers, the width is 200-600 nanometers, 600-1100 nanometers and 1100-1900 nanometers respectively, and the length is 10-80 micrometers, 20-80 micrometers and 10-30 micrometers respectively.
3. A multimode switched 1 x 3 optical switch according to claim 1, characterized in that: the width of the uplink composite waveguide (5) and the downlink composite waveguide (7) is 200-600 nanometers, and the length of the uplink composite waveguide and the downlink composite waveguide is 5-30 micrometers; the thickness of the Si waveguide (10) is 100-400 nm, and the thickness of the phase-change material film (11) is 10-100 nm.
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| CN202222061414.8U CN218122296U (en) | 2022-08-08 | 2022-08-08 | Multi-mode switching 1X 3 optical switch |
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