CN218069899U - Near-infrared annealing crystallization equipment - Google Patents
Near-infrared annealing crystallization equipment Download PDFInfo
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- CN218069899U CN218069899U CN202220949066.5U CN202220949066U CN218069899U CN 218069899 U CN218069899 U CN 218069899U CN 202220949066 U CN202220949066 U CN 202220949066U CN 218069899 U CN218069899 U CN 218069899U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model relates to a near-infrared annealing crystallization equipment, include: the shell is provided with a corresponding annealing bin; the near-infrared lamp tubes are arranged at the top end of the annealing bin in an array manner; the reflecting face mask is arranged between the upper end surface of the annealing bin and the near-infrared lamp tubes, and a mirror surface is arranged on one surface of the reflecting face mask facing the near-infrared lamp tubes; and the annealing bedplate is arranged on the lower end surface of the annealing bin. The utility model discloses a set up the near infrared fluorescent tube in annealing storehouse, the near infrared irradiation that utilizes the near infrared fluorescent tube to take place places the wet membrane of semiconductor on the annealing platen to thereby can make the wet membrane of semiconductor absorb the energy in the near infrared and heat up rapidly and evaporate the moisture crystallization in the wet membrane of semiconductor, reach the purpose of membrane, and shortened the required time of annealing crystallization greatly and guaranteed the quality of annealing post-crystallization semiconductor film.
Description
Technical Field
The utility model relates to a semiconductor film preparation annealing crystallization field specifically indicates to have a near-infrared annealing crystallization equipment.
Background
The perovskite solar cell is a novel photovoltaic material developed in the last decade, and has the advantages of high photoelectric conversion efficiency and low cost. The core component of the perovskite solar cell is a semiconductor thin film, namely a perovskite thin film layer. Among them, the crystallinity of the perovskite thin film is a key factor affecting the device performance.
The perovskite thin film annealing process (thermal annealing) commonly used nowadays, for example, in the application with publication number CN112467042A, named "a perovskite solar cell module intelligent automatic production system", discloses that the perovskite thin film annealing can be performed by using an infrared annealing device, but the required annealing time is long, and it is difficult to precisely control the crystallization of the perovskite thin film, which results in long annealing time and affects the experimental process.
To the problems existing in the prior art, the utility model discloses a near-infrared annealing crystallization device is the purpose of research.
SUMMERY OF THE UTILITY MODEL
To the problem that above-mentioned prior art exists, the utility model aims to provide a near-infrared annealing crystallization equipment can effectively solve the problem that above-mentioned prior art exists.
The technical scheme of the utility model is that:
a near-infrared annealing crystallization apparatus comprising:
the shell is provided with a corresponding annealing bin;
the near-infrared lamp tubes are arranged at the top end of the annealing bin in an array manner;
the reflecting face cover is arranged between the upper end face of the annealing bin and the near-infrared lamp tubes, and one surface of the reflecting face cover facing the near-infrared lamp tubes is a mirror surface;
and the annealing bedplate is arranged on the lower end surface of the annealing bin.
Furthermore, the wavelength of the near-infrared lamp tube is 800nm-1400nm.
Further, the distance between the adjacent near-infrared lamp tubes is 30-40 mm, and the distance between the near-infrared lamp tubes and the annealing bedplate is 18-22 mm.
Further, a time relay is included for controlling the lighting time of the near infrared lamp tube.
Optionally, the number of the near-infrared light tubes is 2, the power of each near-infrared light tube is 100W, and the timing time of the time relay is 180s.
Optionally, the number of the near-infrared light tubes is 3, the power of each near-infrared light tube is 100W, and the timing time of the time relay is 120s.
Optionally, the number of the near-infrared light tubes is 2, the power of each near-infrared light tube is 1000W, and the timing time of the time relay is 15s.
Optionally, the number of the near-infrared light tubes is 3, the power of each near-infrared light tube is 1000W, and the timing time of the time relay is 8s.
Further, still include one or more among them power, radiator fan, display instrument, switch, exhaust hole, temperature sensor, the power set up in for each part provides the electric energy in the casing, the exhaust hole the display instrument the switch set up in the surface of casing, radiator fan set up in the exhaust hole, temperature sensor set up in annealing storehouse.
Further, the shell is provided with a cabin cover matched with the annealing cabin.
The utility model has the advantages that:
the utility model discloses to semiconductor film's technology processing demand, pertinence ground has provided near-infrared annealing's equipment.
The utility model discloses a set up the near infrared fluorescent tube in annealing storehouse, the near infrared irradiation that utilizes the near infrared fluorescent tube to take place places the wet membrane of semiconductor on the annealing platen to thereby can make the wet membrane of semiconductor absorb the energy in the near infrared and heat up rapidly and evaporate the moisture crystallization in the wet membrane of semiconductor, reach the purpose of membrane, and shortened the required time of annealing crystallization greatly and guaranteed the quality of annealing post-crystallization semiconductor film.
The near infrared lamp tube with the wavelength of 800nm to 1400nm is selected for the characteristic that the semiconductor wet film is the perovskite film, the near infrared rays generated by the near infrared lamp tube can be matched with the molecular composition in the perovskite film, so that the perovskite film can absorb energy more easily, and the annealing time is shortened.
Drawings
Fig. 1 is a schematic structural diagram of a near-infrared annealing crystallization apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic structural view of a near-infrared lamp tube and an annealing platen according to a first embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a near-infrared annealing crystallization apparatus according to a second embodiment of the present invention.
Description of the reference numerals:
1-shell, 101-annealing bin, 102-hatch cover; 2-near infrared lamp tube; 3-a reflective mask; 4-annealing the platen.
Detailed Description
To facilitate understanding of those skilled in the art, the structure of the present invention will now be described in further detail with reference to the following examples:
example one
Referring to fig. 1-2, a near-infrared annealing crystallization apparatus includes:
the annealing device comprises a shell 1, wherein the shell 1 is provided with a corresponding annealing bin 101;
the plurality of near-infrared lamp tubes 2 are arranged at the top end of the annealing bin 101 in an array manner;
the reflecting face shield 3 is arranged between the upper end surface of the annealing bin 101 and the near-infrared lamp tubes 2, and one surface, facing the near-infrared lamp tubes 2, of the reflecting face shield 3 is a mirror surface;
and the annealing bedplate 4 is arranged on the lower end surface of the annealing bin 101. The annealing platen 4 is used for placing the semiconductor wet film as prepared.
According to the annealing device, the near-infrared lamp tube 2 is arranged in the annealing bin 101, the near-infrared light generated by the near-infrared lamp tube 2 irradiates the semiconductor wet film placed on the annealing bedplate 4, so that the semiconductor wet film can absorb energy in the near-infrared light and rapidly heat up to evaporate moisture in the semiconductor wet film, and therefore crystallization is achieved, and the purpose of film making is achieved.
Further, the wavelength of the near-infrared lamp tube 2 is 800nm-1400nm.
Further, the distance between the adjacent near-infrared lamp tubes 2 is 30mm-40mm, and the distance between the near-infrared lamp tubes 2 and the annealing bedplate 4 is 18mm-22mm.
The semiconductor wet film aimed at in the embodiment is a perovskite thin film, and the near infrared lamp tube 2 with the wavelength of 800nm to 1400nm is selected, so that the near infrared rays generated by the near infrared lamp tube 2 can be matched with the molecular composition in the perovskite thin film, the perovskite thin film can absorb energy more easily, and the annealing time is shortened. By reasonably arranging the distance between the adjacent near-infrared lamp tubes 2 and the distance between the near-infrared lamp tubes 2 and the annealing bedplate 4, the infrared energy generated by the near-infrared lamp tubes 2 can be more fully utilized, and the perovskite thin film is prevented from being damaged by the near-infrared lamp tubes 2.
Through the actual use test of this embodiment, choose the near-infrared fluorescent tube 2 of high power for use, the annealing time of this application can accelerate to about 15s.
Further, a time relay (not shown in the figure) is included for controlling the lighting time of the near infrared lamp tube 2. In this embodiment, the time relay may be connected between the near-infrared lamp tube 2 and the power source matched therewith, and the time relay may turn on or off the near-infrared lamp tube 2 and the power source matched therewith to control the lighting of the near-infrared lamp tube 2 and the time of each lighting.
Optionally, the number of the near-infrared light tubes 2 is 2, the power of each near-infrared light tube 2 is 100W, and the timing time of the time relay is 180s.
Optionally, the number of the near-infrared light tubes 2 is 3, the power of each near-infrared light tube 2 is 100W, and the timing time of the time relay is 120s.
Optionally, the number of the near-infrared light tubes 2 is 2, the power of each near-infrared light tube 2 is 1000W, and the timing time of the time relay is 15s.
Optionally, the number of the near-infrared light tubes 2 is 3, the power of each near-infrared light tube 2 is 1000W, and the timing time of the time relay is 8s.
The reasonable quantity and power of the near-infrared lamp tubes 2 and the timing time of the time relay matched with the reasonable quantity and power can achieve the purposes of saving energy, improving the energy consumption ratio and preventing the perovskite film from being damaged by the irradiation of the near-infrared lamp tubes 2.
Furthermore, the device also comprises one or more of a power supply, a cooling fan, a display instrument, a switch, an exhaust hole and a temperature sensor. The power set up in for each part provides the electric energy in the casing, the exhaust hole display instrument the switch set up in the surface of casing, radiator fan set up in the exhaust hole, temperature sensor set up in annealing storehouse. The display instrument can display relevant information, such as the time remaining in the time relay, the temperature in the goods withdrawal bin and the like. Can start or close the total power of near-infrared annealing crystallization equipment through the switch, can in time distribute away the heat of the inside production of near-infrared annealing crystallization equipment through the cooperation of radiator fan and exhaust hole.
Meanwhile, the embodiment can also be matched with a conveyor belt. Through the arrangement that the belt surface of the conveyor belt passes through the goods returning bin, the perovskite film can be continuously input by the conveyor belt and directly irradiated by the near-infrared lamp tube.
Example two
The present embodiment is different from the first embodiment in that, referring to fig. 3, further, the housing 1 is provided with a hatch 102 which is matched with the annealing chamber 101. Through the arrangement of the hatch cover 102, the hatch cover 102 and the annealing bin 101 form a closed space, so that the perovskite film can be placed in the closed space and annealing crystallization can be carried out in the closed space.
It should be noted that, the implementation principle and the resulting technical effects of the embodiment are the same as those of the first embodiment, and for the sake of brief description, reference may be made to corresponding contents of the first embodiment.
The above is only the preferred embodiment of the present invention, and all the equivalent changes and modifications made within the scope of the claims of the present invention should belong to the scope of the present invention.
Claims (8)
1. A near-infrared annealing crystallization device is characterized in that: the method comprises the following steps:
the shell is provided with a corresponding annealing bin;
the near-infrared lamp tubes are arranged at the top end of the annealing bin in an array manner; the wavelength of the near-infrared lamp tube is 800-1400 nm, and the distance between the adjacent near-infrared lamp tubes is 30-40 mm;
the reflecting face mask is arranged between the upper end surface of the annealing bin and the near-infrared lamp tubes, and a mirror surface is arranged on one surface of the reflecting face mask facing the near-infrared lamp tubes;
the annealing bedplate is arranged on the lower end face of the annealing bin, and the distance between the near-infrared lamp tube and the annealing bedplate is 18-22 mm.
2. The near-infrared annealing crystallization apparatus according to claim 1, characterized in that: the lamp comprises a time relay for controlling the lighting time of the near-infrared lamp tube.
3. The near-infrared annealing crystallization apparatus according to claim 2, characterized in that: the number of the near-infrared lamp tubes is 2, the power of each near-infrared lamp tube is 100W, and the timing time of the time relay is 180s.
4. The near-infrared annealing crystallization apparatus according to claim 2, characterized in that: the number of the near-infrared lamp tubes is 3, the power of each near-infrared lamp tube is 100W, and the timing time of the time relay is 120s.
5. The near-infrared annealing crystallization apparatus according to claim 2, characterized in that: the number of the near-infrared lamp tubes is 2, the power of each near-infrared lamp tube is 1000W, and the timing time of the time relay is 15s.
6. The near-infrared annealing crystallization apparatus according to claim 2, characterized in that: the number of the near-infrared lamp tubes is 3, the power of each near-infrared lamp tube is 1000W, and the timing time of the time relay is 8s.
7. The near-infrared annealing crystallization apparatus according to claim 1, characterized in that: the device comprises a shell, and is characterized by further comprising one or more of a power supply, a cooling fan, a display instrument, a switch, exhaust holes and a temperature sensor, wherein the power supply is arranged in the shell and provides electric energy for all parts, the exhaust holes, the display instrument and the switch are arranged on the outer surface of the shell, the cooling fan is arranged in the exhaust holes, and the temperature sensor is arranged in the annealing bin.
8. The near-infrared annealing crystallization apparatus according to claim 1, characterized in that: the shell is provided with a hatch cover matched with the annealing bin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220949066.5U CN218069899U (en) | 2022-04-22 | 2022-04-22 | Near-infrared annealing crystallization equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220949066.5U CN218069899U (en) | 2022-04-22 | 2022-04-22 | Near-infrared annealing crystallization equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218069899U true CN218069899U (en) | 2022-12-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220949066.5U Active CN218069899U (en) | 2022-04-22 | 2022-04-22 | Near-infrared annealing crystallization equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218069899U (en) |
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2022
- 2022-04-22 CN CN202220949066.5U patent/CN218069899U/en active Active
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