CN218014580U - Electrostatic absorption disc cleaning device - Google Patents

Abstract

The application provides an electrostatic absorption dish cleaning device includes: the device comprises a gas supply device, a gas supply pipeline and an electrostatic adsorption disc. The gas supply device is used for supplying gas. The gas supply pipeline comprises a main pipeline and a plurality of thimbles, one end of the main pipeline is communicated with the gas supply device, one ends of the thimbles are respectively communicated with the main pipeline, the other ends of the thimbles are used for ejecting or lowering the wafer, and each thimble comprises at least one gas outlet. The electrostatic adsorption disc is provided with a plurality of through holes, the plurality of through holes and the plurality of ejector pins are correspondingly arranged, each ejector pin can respectively penetrate through each through hole to move up and down so as to eject or put down a wafer, each air outlet can move up and down along with each corresponding ejector pin, and when the air outlet moves above the electrostatic adsorption disc, air can flow to the electrostatic adsorption disc through each air outlet so as to remove pollutants on the electrostatic adsorption disc. This application has been solved current electrostatic adsorption dish cleaning device and can have been reduced the board and have been run the problem of goods time when cleaing away the pollutant.

Description

Electrostatic absorption disc cleaning device

Technical Field

The present application relates to semiconductor processing equipment, and more particularly, to electrostatic chuck cleaning devices.

Background

In the wafer etching process, an Electrostatic Chuck (ESC) on a machine is required to transfer the wafer to a reaction chamber, so that the wafer is etched in the reaction chamber. During the etching of the wafer, the electrostatic chuck is located below the wafer, so that the contaminants generated in the reaction chamber fall onto the electrostatic chuck, and the surface roughness of the electrostatic chuck is increased. After the roughness of the surface of the electrostatic chuck is increased, the gap between the electrostatic chuck and the wafer is increased. During the etching of the wafer, helium gas is introduced between the back of the wafer and the electrostatic adsorption disc to cool the wafer, so that the increase of the gap between the electrostatic adsorption disc and the wafer can cause more helium gas to flow out to the back of the wafer, and further the wafer is cooled too much, thereby causing the defect of wafer production.

To remove contaminants from the electrostatic chuck, the following three methods are generally used: 1. and opening the reaction chamber, and allowing an operator to erase the pollutants on the electrostatic adsorption disc by using the dust-free cloth. 2. When no wafer exists in the reaction chamber, the electrostatic adsorption disc is provided with the air blowing channel and the guide tray, and air is discharged from the air outlet of the air blowing channel and is reflected by the guide tray to blow the electrostatic adsorption disc, so that pollutants on the electrostatic adsorption disc are blown and cleaned. 3. When the reaction chamber has no Wafer, the plasma (which can be generated by inert gas) is used to react the pollutants on the electrostatic adsorption disc, so as to realize automatic cleaning (WAC-Wafer less auto clean) and achieve the purpose of removing the pollutants.

However, the method 1 requires shutdown for manual operation, which increases labor cost, increases down time of the machine, and reduces run time of the machine. When the method 2 and the method 3 are used for removing the pollutants, the machine cannot process the wafer, a special time period is required to be reserved for removing the pollutants, and the running time of the machine is also reduced. Therefore, the existing electrostatic adsorption disc cleaning device has the problem of reducing the running time of a machine table when removing pollutants.

SUMMERY OF THE UTILITY MODEL

To current electrostatic absorption dish cleaning device to exist and reduce the board when cleaing away the pollutant and run the problem of goods time, this application provides an electrostatic absorption dish cleaning device, includes: the device comprises a gas supply device, a gas supply pipeline and an electrostatic adsorption disc. The gas supply device is used for supplying gas. The air supply pipeline comprises a main pipeline and a plurality of thimbles, one end of the main pipeline is communicated with the air supply device, one ends of the thimbles are respectively communicated with the main pipeline, the other ends of the thimbles are used for ejecting or lowering wafers, and each thimble comprises at least one air outlet. The electrostatic adsorption disc is provided with a plurality of through holes, the plurality of through holes and the plurality of ejector pins are correspondingly arranged, each ejector pin can respectively penetrate through each through hole to move up and down so as to eject or lower the wafer, the gas outlet can move up and down along with the corresponding ejector pin, and when the gas outlet moves above the electrostatic adsorption disc, gas can flow to the electrostatic adsorption disc through each gas outlet so as to remove pollutants on the electrostatic adsorption disc.

Preferably, when the air outlets move above the electrostatic adsorption disc, each air outlet faces the electrostatic adsorption disc.

Preferably, each the thimble includes roof, lateral wall and at least one outlet duct, roof sealing connection in the top of lateral wall, each the outlet duct with correspond the one end intercommunication of lateral wall, trunk line and each the other end intercommunication of lateral wall, each the gas outlet is located the correspondence the outlet duct, and from corresponding the lateral wall is along corresponding the axial extension of outlet duct.

Preferably, an included angle between the central axis of each air outlet pipe and the corresponding side wall is an acute angle.

Preferably, each thimble includes two outlet ducts, two outlet ducts set up in the both sides of the central axis of corresponding thimble.

Preferably, the two air outlet pipes are arranged on the corresponding side walls in a staggered mode.

Preferably, all the outlet pipes corresponding to each side of the central axis of each thimble face approximately the same direction.

Preferably, the main pipeline is perpendicular to each of the side walls, and the main pipeline is communicated with the bottom ends of the side walls.

Preferably, the projection of each thimble on the corresponding through hole is located in the through hole.

Preferably, the electrostatic adsorption disc cleaning device further comprises an actuating mechanism connected with the gas supply pipeline, and the actuating mechanism is used for driving the plurality of ejector pins to eject or lower the wafer.

The beneficial effect of this application lies in: the device is provided with a gas supply device, a gas supply pipeline and an electrostatic adsorption disc. The gas supply device is used for supplying gas. The air supply pipeline is provided with a main pipeline and a plurality of thimbles, one end of the main pipeline is communicated with the air supply device, one ends of the thimbles are respectively communicated with the main pipeline, the other ends of the thimbles push out or lower the wafer, and each thimble is provided with at least one air outlet. The electrostatic adsorption disc is provided with a plurality of through holes, the plurality of through holes and the plurality of ejector pins are correspondingly arranged, each ejector pin respectively penetrates through each through hole to move up and down so as to eject or place the wafer, the gas outlet can move up and down along with the corresponding ejector pin, and when the gas outlet moves above the electrostatic adsorption disc, gas can flow to the electrostatic adsorption disc through each gas outlet so as to remove pollutants on the electrostatic adsorption disc. Because the gas outlet blows when the top of electrostatic absorption dish moves and clears away the pollutant on the electrostatic absorption dish, this application is when clearing away the pollutant promptly, thimble and gas outlet are the up-and-down motion, and when the board normally ran the goods, the thimble was the up-and-down motion originally, so clear away pollutant and thimble and normally run the up-and-down motion of goods time and can go on simultaneously, need not stop the board, also need not specially select to clear away the pollutant in the moment that does not have the wafer on the electrostatic absorption dish either, make clear away the pollutant and run the goods and can go on simultaneously, consequently can not reduce the run goods time of board.

The foregoing description is only an overview of the technical solutions of the present application, and in order to make the technical means of the present application more clearly understood and to be implemented in accordance with the content of the specification, the present application will be described in detail with reference to the following preferred embodiments of the present application and the accompanying drawings.

Drawings

FIG. 1 is an exploded view of an electrostatic chuck cleaning device in an embodiment of the present application;

FIG. 2 is a cross-sectional view of an electrostatic chuck cleaning device in an embodiment of the present application;

fig. 3 is a perspective view of an electrostatic chuck cleaning apparatus according to an embodiment of the present application.

Wherein, the reference numbers:

1. electrostatic absorption disc cleaning device

10. Gas supply device

11. Gas supply pipeline

110. Main pipeline

111. Thimble

1110. Air outlet

1111. Roof wall

1112. Side wall

1113. Air outlet pipe

12. Electrostatic adsorption disc

120. Through-hole

13. Actuating mechanism

2. Wafer

Detailed Description

The following description of the embodiments of the present application is provided for illustrative purposes, and other advantages and capabilities of the present application will become apparent to those skilled in the art from the present disclosure.

It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments. In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the accompanying drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

It should be noted that unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and include, for example, fixed or removable connections or integral connections; the connection can be mechanical connection or electrical connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

As shown in fig. 1, there is provided an electrostatic adsorption disk cleaning apparatus 1 in an embodiment, including: the device comprises a gas supply device 10, a gas supply pipeline 11, an electrostatic adsorption disc 12 and an actuating mechanism 13. The gas supply device 10 is used to supply gas. The gas supplied from the gas supply device 10 may be an inert gas, and may be, for example, pure nitrogen (PN 2), helium, argon, or the like. The gas supply means 10 may be a gas pump or a gas tank. The air supply duct 11 includes a main duct 110 and a plurality of pins 111, and one end of the main duct 110 is communicated with the air supply device 10. The main pipe 110 and the air supply device 10 may be communicated through a hose, and the hose is provided with a length enough for the thimble 111 to move up and down (for example, the hose is provided with a certain length by being wound into a plurality of turns) so as to prevent the main pipe 110 from being unable to move along with the thimble 111 and being torn off when the thimble 111 moves up and down.

As shown in fig. 2, one end of each of the plurality of pins 111 is connected to the main pipe 110, and the other end of each of the plurality of pins 111 is used for ejecting or lowering the wafer 2, and each of the plurality of pins 111 includes at least one air outlet 1110. The thimble 111 may be connected to the main pipe 110 by bonding. When the machine runs, the wafer 2 is transferred to the reaction chamber containing the electrostatic chuck 12 by the robot, and then is placed on the other end of the plurality of pins 111, and then is placed on the electrostatic chuck 12 by the other end of the plurality of pins 111. After the wafer 2 is processed, the other ends of the plurality of pins 111 eject the wafer 2 from the electrostatic chuck 12 to allow the robot to take away the wafer 2. The thimble 111 may be made of silicon carbide and may be cylindrical in shape.

As shown in fig. 2, the electrostatic chuck 12 has a plurality of through holes 120, the plurality of through holes 120 and the plurality of pins 111 are disposed correspondingly, and each pin 111 can respectively pass through each through hole 120 to move up and down to eject or lower the wafer 2. For example, the pins 111 and the through holes 120 may be disposed in a one-to-one correspondence, and the pins 111 may move up and down along the axial direction of the through holes 120. The through hole 120 may be a through hole that is originally provided in the electrostatic chuck 12 and dedicated for the passage of the ejector pin 111. The shape of the through-hole 120 may be circular. The air outlets 1110 move up and down along with the corresponding needles 111, and when the air outlets 1110 move above the electrostatic chuck 12, air can flow to the electrostatic chuck 12 through the air outlets 1110 to remove contaminants on the electrostatic chuck 12. For example, the gas outlets 1110 may move above the upper surface of the electrostatic chuck 12 and then move continuously for a stroke, and during the stroke (whether moving upward or downward), the gas may flow continuously to the upper surface of the electrostatic chuck 12 through each gas outlet 1110. After the gas flows to the electrostatic adsorption disc 12, the contaminants on the electrostatic adsorption disc 12 are removed by purging.

As shown in fig. 2, an actuator 13 is connected to the gas supply duct 11, and the actuator 13 is used for driving the plurality of pins 111 to eject or lower the wafer 2. One end of the actuator 13 may be adhered to the outer wall of the main pipe 110, and the plurality of ejector pins 111 may be pushed to move up and down indirectly by pushing the main pipe 110 to move up and down. The actuator 13 may be a robotic arm. Preferably, each air outlet 1110 faces the electrostatic chuck 12 when the air outlets 1110 move above the electrostatic chuck 12. For example, when the air outlets 1110 move above the upper end surface of the electrostatic chuck 12, each air outlet 1110 may face the upper end surface of the electrostatic chuck 12 to ensure that the air is blown toward the electrostatic chuck 12. Preferably, the projection of each thimble 111 on the corresponding through hole 120 is located in the through hole 120. For example, the central axis of the thimble 111 may substantially coincide with the central axis of the through hole 120, and the projection of the cross section of each part of the thimble 111 along the central axis of the through hole 120 to the through hole 120 may be located in the cross section of the through hole 120, so that each part of the thimble 111 may pass through the through hole 120 without being jammed during the up-and-down movement.

As shown in fig. 2, by providing the gas supply device 10, the gas supply duct 11, and the electrostatic adsorption disk 12. The gas supply device 10 is made to supply gas. The gas supply duct 11 is provided with a main duct 110 and a plurality of pins 111, one end of the main duct 110 is communicated with the gas supply device 10, one ends of the plurality of pins 111 are respectively communicated with the main duct 110, the other ends of the plurality of pins 111 eject or lower the wafer 2, and each pin 111 is provided with at least one gas outlet 1110. The plurality of through holes 120 are disposed on the electrostatic chuck 12, the plurality of through holes 120 and the plurality of pins 111 are disposed correspondingly, each pin 111 passes through each through hole 120 to move up and down to eject or drop the wafer 2, the gas outlets 1110 can move up and down along with the corresponding pin 111, and when the gas outlets 1110 move above the electrostatic chuck 12, the gas can flow to the electrostatic chuck 12 through each gas outlet 1110 to remove the contaminants on the electrostatic chuck 12.

Because the air outlet 1110 blows air to remove the contaminants on the electrostatic chuck 12 when the electrostatic chuck 12 moves above the electrostatic chuck, that is, the ejector pin 111 and the air outlet 1110 move up and down when the electrostatic chuck cleaning device 1 in this embodiment removes the contaminants, and the ejector pin is originally moved up and down when the machine runs normally, the removal of the contaminants and the up and down movement of the ejector pin 111 when the machine runs normally can be performed simultaneously, and the machine does not need to be stopped, and the contaminants need not to be removed at a time when no wafer 2 is on the electrostatic chuck 12, so that the removal of the contaminants and the running (i.e., processing of the wafer) can be performed simultaneously, and therefore, the running time of the machine does not decrease.

As shown in fig. 2, each thimble 111 preferably includes a top wall 1111, a side wall 1112 and at least one air outlet pipe 1113, the top wall 1111 is hermetically connected to the top of the side wall 1112, each air outlet pipe 1113 is communicated with one end of the corresponding side wall 1112, the main pipe 110 is communicated with the other end of the corresponding side wall 1112, each air outlet 1110 is located in the corresponding air outlet pipe 1113 and extends from the corresponding side wall 1112 in the axial direction of the corresponding air outlet pipe 1113. For example, the top wall 1111 may be a thin cylindrical shape and the side wall 1112 may be a cylindrical tube shape. The flow of gas in the gas supply duct 11 is indicated by the one-way arrows in fig. 2. The outlet pipe 1113 may be a circular pipe. The top wall 1111, the side wall 1112 and the corresponding outlet pipes 1113 may be integrally formed.

The number and the orientation of the outlet pipes 1113 can be set as required, and the more the number and the corresponding orientation of the outlet pipes 1113 are, the more the range on the electrostatic adsorption disc 12 can be cleaned, and the more difficult it is to leave an uncleaned area on the electrostatic adsorption disc 12. For example, the number of the air outlet pipes 1113 of each thimble 111 may be multiple, and the multiple air outlet pipes 1113 are circumferentially and uniformly distributed with reference to the central axis of the thimble 111. The included angle between the central axis of each air outlet pipe 1113 and the corresponding side wall 1112 may be an acute angle, so that the air outlet 1110 of the air outlet pipe 1113 faces the upper end surface of the electrostatic chuck 12 when moving above the electrostatic chuck 12.

As shown in fig. 2, each thimble 111 preferably includes two air outlet pipes 1113, and the two air outlet pipes 1113 are disposed on two sides of a central axis of the corresponding thimble 111. For example, the central axes of the two outlet pipes 1113 may be located on the same plane as the central axis of the corresponding thimble 111, and the two outlet pipes 1113 are disposed on two sides of the central axis of the corresponding thimble 111. The air outlet pipe 1113 is disposed on two sides of the central axis of the corresponding thimble 111, and can clean the electrostatic adsorption disk 12 from at least two directions, so that the coverage area of cleaning is more comprehensive. Preferably, two air outlet pipes 1113 are arranged on the corresponding side wall 1112 in a staggered manner, for example, two air outlet pipes 1113 are respectively arranged on two sides of the central axis of the thimble 111 and are arranged in a vertically staggered manner along the axial direction of the thimble 111. The staggered arrangement of the air outlets 1110 on the corresponding side walls 1112 can avoid reducing the strength of the side walls 1112, because if a plurality of air outlets 1110 are arranged at the same position of the side walls 1112, the yield strength of the side walls 1112 is reduced, and the service life of the side walls 1112 is reduced.

As shown in fig. 2, all of the outlet pipes 1113 are preferably oriented substantially the same on each side of the central axis of each of the ejector pins 111. Preferably, the main pipe 110 is disposed perpendicular to each of the sidewalls 1112, and the main pipe 110 communicates with the bottom end of each of the sidewalls 1112.

As shown in fig. 3, when the number of the thimble 111 is 3, the main pipe 110 may be composed of two sections, two sections of the main pipe 110 are vertically communicated with each other to form a T shape, one section of the main pipe 110 is vertically communicated with the bottom ends of the side walls 1112 of two thimble 111, and the other section of the main pipe 110 is vertically communicated with the bottom end of the side wall 1112 of the remaining thimble 111. While the section of the main pipe 110 vertically communicating with the side walls 1112 of the two ejector pins 111 is also communicated with the air supply unit 10.

While the electrostatic chuck cleaning device provided in the embodiments of the present application has been described in detail, it will be apparent to those skilled in the art that the embodiments and applications of the electrostatic chuck cleaning device can be modified according to the concepts of the embodiments. In view of the foregoing, it is intended that the present disclosure not be limited to the disclosed embodiments, but that the disclosure will include all equivalent modifications and variations as may come within the spirit and scope of the appended claims.

Claims (10)

1. An electrostatic adsorption disc cleaning apparatus (1), comprising:

a gas supply device (10) for supplying a gas;

the gas supply pipeline (11) comprises a main pipeline (110) and a plurality of thimbles (111), one end of the main pipeline (110) is communicated with the gas supply device (10), one ends of the thimbles (111) are respectively communicated with the main pipeline (110), the other ends of the thimbles (111) are used for ejecting or lowering the wafer (2), and each thimble (111) comprises at least one gas outlet (1110); and

the electrostatic adsorption disc (12) is provided with a plurality of through holes (120), the plurality of through holes (120) and the plurality of ejector pins (111) are correspondingly arranged, each ejector pin (111) can respectively penetrate through each through hole (120) to move up and down so as to eject or lower the wafer (2), the gas outlet (1110) can move up and down along with the corresponding ejector pin (111), and when the gas outlet (1110) moves above the electrostatic adsorption disc (12), gas can flow to the electrostatic adsorption disc (12) through each gas outlet (1110) so as to clear pollutants on the electrostatic adsorption disc (12).

2. The electrostatic clamping disk cleaning apparatus (1) according to claim 1, wherein each of the air outlets (1110) faces the electrostatic clamping disk (12) when the air outlets (1110) move above the electrostatic clamping disk (12).

3. The electrostatic adsorption disk cleaning apparatus (1) according to claim 2, wherein each of the ejector pins (111) comprises a top wall (1111), a side wall (1112) and at least one air outlet pipe (1113), the top wall (1111) is hermetically connected to the top of the side wall (1112), each air outlet pipe (1113) is communicated with one end of the corresponding side wall (1112), the main pipe (110) is communicated with the other end of the corresponding side wall (1112), each air outlet (1110) is located at the corresponding air outlet pipe (1113) and extends from the corresponding side wall (1112) along the axial direction of the corresponding air outlet pipe (1113).

4. The electrostatic adsorption disk cleaning apparatus (1) according to claim 3, wherein an included angle between a central axis of each of the outlet pipes (1113) and the corresponding side wall (1112) is an acute angle.

5. The electrostatic adsorption disc cleaning device (1) according to claim 4, wherein each of the ejector pins (111) comprises two air outlet pipes (1113), and the two air outlet pipes (1113) are arranged on two sides of the central axis of the corresponding ejector pin (111).

6. The electrostatic adsorption disk cleaning apparatus (1) according to claim 5, wherein the two outlet pipes (1113) are arranged on the corresponding side walls (1112) in a staggered manner.

7. The electrostatic chuck cleaning device (1) according to claim 3, wherein all of the outlet pipes (1113) corresponding to each side of the central axis of each of the ejector pins (111) have substantially the same orientation.

8. The electrostatic chuck cleaning apparatus (1) according to claim 3, wherein the main pipe (110) is disposed perpendicular to each of the side walls (1112), and the main pipe (110) communicates with a bottom end of each of the side walls (1112).

9. The electrostatic chuck cleaning device (1) according to any one of claims 1 to 8, wherein a projection of each of the ejector pins (111) on the corresponding through hole (120) is located in the through hole (120).

10. The electrostatic chuck cleaning apparatus (1) according to claim 9, further comprising an actuator (13) connected to the gas supply duct (11), wherein the actuator (13) is configured to drive the plurality of ejector pins (111) to eject or drop the wafer (2).

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