CN218004826U

CN218004826U - Insulated gate bipolar transistor

Info

Publication number: CN218004826U
Application number: CN202221674260.3U
Authority: CN
Inventors: 孙炜
Original assignee: Shenzhen Pinshuo Tiancheng Technology Co ltd
Current assignee: Shenzhen Pinshuo Tiancheng Technology Co ltd
Priority date: 2022-07-01
Filing date: 2022-07-01
Publication date: 2022-12-09
Anticipated expiration: 2032-07-01

Abstract

The utility model relates to a transistor technology field just discloses an insulated gate bipolar transistor, which comprises a housin, the inside fixed mounting of casing has transistor element, three metal lead wire is installed on transistor element's right side, and is three the equal fixedly connected with connecting block in left side of metal lead wire bottom, movable groove has been seted up to the inside of casing, movable groove's inside sliding connection has the movable plate. This insulated gate bipolar transistor, through setting up connecting block, movable plate and draw-in groove, rotate the knob, make the double-screw bolt on casing bottom right side rotate downwards, drive the movable plate and slide downwards at the activity inslot, make the connecting block of three metal lead wire bottom shift out from three draw-in groove respectively, make the three logical groove of movable plate coincide with the three square groove on casing right side respectively, can extract and change the metal lead wire of transistor element right side interface, replaced the lead wire replacement mode of dismantling the casing to the change operation of the transistor lead wire of being convenient for.

Description

Insulated gate bipolar transistor

Technical Field

The utility model relates to a transistor technology field specifically is an insulated gate bipolar transistor.

Background

The insulated gate bipolar transistor integrates the advantages of a power transistor and a power field effect transistor, has good characteristics and is wide in application field. In the transistor use, when the transistor metal lead appears damaging and needs to be changed, because adopt the encapsulated mode of bonding between the shell, dismantle the shell of transistor earlier and just can change the lead wire on the component, and still need bond the encapsulation again after changing, it is very convenient to operate, the change of the transistor lead of being not convenient for is used.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

The utility model provides a not enough to prior art, the utility model provides an insulated gate bipolar transistor possesses the change of being convenient for and fixes a position advantages such as installation effect is good, has solved the change of transistor lead wire and need dismantle the shell earlier, and still need bond the encapsulation again after changing, and it is very convenient to operate, the problem of the insulated gate bipolar transistor encapsulation use of being not convenient for.

(II) technical scheme

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides an insulated gate bipolar transistor, includes the casing, the inside fixed mounting of casing has the transistor component, three metal lead wire, three are installed on the right side of transistor component the equal fixedly connected with connecting block in left side of metal lead wire bottom, the activity groove has been seted up to the inside of casing, the inside sliding connection in activity groove has the movable plate, three logical groove, three have been seted up on the right side of movable plate the bottom of connecting block is pegged graft with the activity of the interior diapire in three logical groove respectively.

Preferably, three interfaces are formed in the right side of the transistor element, the left ends of the three metal leads are movably inserted into the three interfaces respectively, the metal leads at the right side interfaces of the transistor element can be plugged, and therefore the metal leads can be installed and replaced conveniently.

Preferably, three square grooves are formed in the right side of the shell and are communicated with the inside of the shell, the metal lead and the connecting blocks are movably connected with the inside of the square grooves, and the moving plate slides upwards in the movable grooves, so that the connecting blocks at the bottoms of the three metal leads are matched with the three clamping grooves respectively, and the metal lead connected to a right-side interface of the transistor element is fixed.

Preferably, it is three the draw-in groove has all been seted up to the inner bottom wall that leads to the groove, and is three the connecting block respectively with the inside looks adaptation of three draw-in groove, through three connecting block respectively with three draw-in groove in the grafting cooperation or follow three draw-in groove and shift out, the metal lead's of being convenient for dismantlement change fixed operation.

Preferably, the right side of the bottom of the shell is provided with a threaded hole, the threaded hole is communicated with the inner bottom wall of the movable groove, the bottom of the moving plate is rotatably connected with a stud, the side surface of the stud is connected with the inner thread of the threaded hole, and the stud rotates up and down on the right side of the bottom of the shell to drive the moving plate to move up and down, so that the metal lead wire can be conveniently replaced.

Preferably, the right side of the bottom of the shell is rotatably connected with a knob, the top end of the knob is fixedly connected with the bottom end of the stud, the metal lead on the transistor element can be detached and replaced through forward and reverse rotation of the knob, and a lead replacing mode for detaching the shell is replaced, so that the replacement operation of the transistor lead is facilitated.

Compared with the prior art, the utility model provides an insulated gate bipolar transistor possesses following beneficial effect:

1. this insulated gate bipolar transistor, through setting up connecting block, movable plate and draw-in groove, rotate the knob, make the double-screw bolt on casing bottom right side rotate downwards, drive the movable plate and slide downwards at the activity inslot, make the connecting block of three metal lead wire bottom shift out from three draw-in groove respectively, make the three logical groove of movable plate coincide with the three square groove on casing right side respectively, can extract and change the metal lead wire of transistor element right side interface, replaced the lead wire replacement mode of dismantling the casing to the change operation of the transistor lead wire of being convenient for.

2. According to the insulated gate bipolar transistor, the studs are arranged, after the three metal leads are detached and replaced, the knobs are reversed, the studs on the right side of the bottom of the shell are screwed upwards, the movable plate is driven to slide upwards in the movable groove, and the connecting blocks at the bottoms of the three metal leads are matched with the three clamping grooves respectively, so that the metal leads connected to the right side interface of a transistor element are fixed, and replacement operation of the transistor leads is facilitated.

Drawings

FIG. 1 is a sectional view of the present invention;

FIG. 2 is an enlarged view of the structure A of FIG. 1;

fig. 3 is a bottom view of the structure of the present invention.

Wherein: 1. a housing; 2. a transistor element; 3. a metal lead; 4. connecting blocks; 5. a movable groove; 6. moving the plate; 7. a through groove; 8. a square groove; 9. a card slot; 10. a threaded hole; 11. a stud; 12. a knob.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, an insulated gate bipolar transistor comprises a housing 1, the housing 1 is formed by bonding two half shells, a transistor device 2 is fixedly installed inside the housing 1, three metal leads 3 are installed on the right side of the transistor device 2, three connectors are installed on the right side of the transistor device 2, the left ends of the three metal leads 3 are movably inserted into the three connectors respectively, the left sides of the bottoms of the three metal leads 3 are fixedly connected with a connecting block 4, three square grooves 8 are formed on the right side of the housing 1, the three square grooves 8 are communicated with the inside of the housing 1, the metal leads 3 and the connecting block 4 are movably connected with the inside of the square grooves 8, a movable groove 5 is formed inside the housing 1, a movable plate 6 is slidably connected inside the movable groove 5, a threaded hole 10 is formed on the right side of the bottom of the housing 1, and the threaded hole 10 is communicated with the inner bottom wall of the movable groove 5, the bottom of the moving plate 6 is rotatably connected with a stud 11, the side surface of the stud 11 is connected with the internal thread of a threaded hole 10, the stud 11 is arranged, after the three metal leads 3 are disassembled and replaced, the knob 12 is reversed to enable the stud 11 on the right side of the bottom of the shell 1 to be screwed upwards to drive the moving plate 6 to slide upwards in the movable groove 5, so that the connecting blocks 4 on the bottoms of the three metal leads 3 are respectively matched with the three clamping grooves 9, thereby fixing the metal leads 3 connected with the right side interface of the transistor element 2 and further facilitating the replacement operation of the transistor leads, the right side of the bottom of the shell 1 is rotatably connected with the knob 12, the top end of the knob 12 is fixedly connected with the bottom ends of the studs 11, the right side of the moving plate 6 is provided with three through grooves 7, the bottoms of the three connecting blocks 4 are respectively movably connected with the inner bottom walls of the three through grooves 7, and the inner bottom walls of the three through grooves 7 are provided with the clamping grooves 9, three connecting block 4 respectively with the inside looks adaptation of three draw-in groove 9, set up connecting block 4, movable plate 6 and draw-in groove 9, rotate knob 12, make double-screw bolt 11 downward rotation on casing 1 bottom right side, drive movable plate 6 and slide down in movable groove 5, make connecting block 4 of three metal lead wire 3 bottom shift out from three draw-in groove 9 respectively, make three logical groove 7 of movable plate 6 coincide with three square groove 8 on casing 1 right side respectively, can extract and change the metal lead wire 3 that 2 right side interfaces of transistor element damaged, the lead wire replacement mode of dismantling casing 1 has been replaced, thereby be convenient for the change operation of transistor lead wire.

When the insulated gate bipolar transistor is used, the knob 12 is rotated to rotate the stud 11 on the right side of the bottom of the shell 1 downwards to drive the movable plate 6 to slide downwards in the movable groove 5, so that the connecting blocks 4 at the bottoms of the three metal leads 3 are respectively moved out of the three clamping grooves 9, the three through grooves 7 of the movable plate 6 are respectively superposed with the three square grooves 8 on the right side of the shell 1, the metal leads 3 with damaged interfaces on the right side of the transistor element 2 can be extracted and replaced, after the three metal leads 3 are detached and replaced, the knob 12 is reversed to upwards screw the stud 11 on the right side of the bottom of the shell 1 into the movable groove 5 to drive the movable plate 6 to slide upwards in the movable groove 5, so that the connecting blocks 4 at the bottoms of the three metal leads 3 are respectively matched with the three clamping grooves 9, and therefore the metal leads 3 connected to the interfaces on the right side of the transistor element 2 are fixed, and the insulated gate bipolar transistor can be detached and replaced by the forward and reverse rotation knob 12, and the lead replacement mode for detaching the transistor leads is convenient to replace operation.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. An insulated gate bipolar transistor comprising a housing (1), characterized in that: the inside fixed mounting of casing (1) has transistor element (2), three metal lead wire (3) are installed on the right side of transistor element (2), and are three the equal fixedly connected with connecting block (4) in left side of metal lead wire (3) bottom, movable groove (5) have been seted up to the inside of casing (1), the inside sliding connection in movable groove (5) has movable plate (6), three logical groove (7), three are seted up on the right side of movable plate (6) the bottom of connecting block (4) is pegged graft with the interior diapire activity of three logical groove (7) respectively.

2. An insulated gate bipolar transistor according to claim 1, characterized in that: three interfaces are formed in the right side of the transistor element (2), and the left ends of the three metal leads (3) are movably inserted into the three interfaces respectively.

3. An insulated gate bipolar transistor according to claim 1, characterized in that: three square grooves (8) are formed in the right side of the shell (1), the square grooves (8) are communicated with the inside of the shell (1), and the metal lead (3) and the connecting block (4) are movably connected with the inside of the square grooves (8).

4. An insulated gate bipolar transistor according to claim 1, characterized in that: the inner bottom wall of the through groove (7) is provided with a clamping groove (9), and the connecting blocks (4) are matched with the insides of the three clamping grooves (9) respectively.

5. An insulated gate bipolar transistor according to claim 1, characterized in that: threaded hole (10) are seted up on the right side of casing (1) bottom, threaded hole (10) and the interior diapire intercommunication of activity groove (5), the bottom of moving plate (6) is rotated and is connected with double-screw bolt (11), the inside threaded connection of the side surface and threaded hole (10) of double-screw bolt (11).

6. An insulated gate bipolar transistor according to claim 5, wherein: the right side of the bottom of the shell (1) is rotatably connected with a knob (12), and the top end of the knob (12) is fixedly connected with the bottom end of the stud (11).