CN217973487U - Heat preservation cover for Czochralski single crystal growing furnace and Czochralski single crystal growing furnace - Google Patents
Heat preservation cover for Czochralski single crystal growing furnace and Czochralski single crystal growing furnace Download PDFInfo
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- CN217973487U CN217973487U CN202222286281.4U CN202222286281U CN217973487U CN 217973487 U CN217973487 U CN 217973487U CN 202222286281 U CN202222286281 U CN 202222286281U CN 217973487 U CN217973487 U CN 217973487U
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- crystal growing
- growing furnace
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- 238000004321 preservation Methods 0.000 title claims abstract description 80
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 12
- 238000007254 oxidation reaction Methods 0.000 abstract description 12
- 238000010030 laminating Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
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Abstract
The utility model discloses a czochralski crystal growing furnace is with cover and czochralski crystal growing furnace keep warm, the czochralski crystal growing furnace is with the cover that keeps warm includes: the heat preservation cover body comprises a feeding hole; the heat preservation layer is coated on the outer wall of the heat preservation cover body and comprises a hollow area matched with the feeding hole; the protective device is arranged on the outer periphery of the feed port, and the extending direction of the protective device is intersected with the extending direction of the heat-insulating cover body; protection device is including the first portion and the second portion that are connected, and the one end that first portion is close to the heat preservation cover body is first end, and first end is the arc, and the camber of first end equals with the camber of feed inlet department heat preservation cover body, the outer peripheral edges laminating of first end and feed inlet. The first end through setting up the first portion of protection device is the arc, and the camber is unanimous with the heat preservation cover camber, realizes covering the body laminating with the heat preservation completely, and protection device sets up in the outer peripheral edges of feed inlet, can prevent the excessive high-temperature gas direct contact of heat preservation and trompil department to prevent high-temperature gas from to the heat preservation oxidation.
Description
Technical Field
The utility model relates to a monocrystalline silicon manufacturing technology field, more specifically relates to a heat preservation cover and czochralski crystal growing furnace for czochralski crystal growing furnace.
Background
Photovoltaic modules are capable of converting solar energy into electrical energy, and the manufacturing technology of monocrystalline silicon, which is the basic material of photovoltaic modules, is also continuously developed. The manufacture of single crystal silicon requires the growth of single crystal silicon from high purity virgin polysilicon, and common methods for converting virgin polysilicon to single crystal silicon include the czochralski method.
The Czochralski single crystal growing method needs to be operated by depending on a single crystal growing furnace, an opening is usually formed in the side edge of an upper heat-insulating cover of the single crystal growing furnace in the prior art and is used for adding a silicon material, the outer wall surface of the heat-insulating cover is usually wrapped by a heat-insulating layer for heat insulation, a soft felt material used by a common heat-insulating layer is graphite or a carbon/carbon composite material, high-temperature gas (SiO) possibly reacts with carbon to cause the oxidation of the soft felt material to form granular silicon carbide, and the granular silicon carbide is removed in vacuum treatment to influence the heat-insulating effect of the heat-insulating cover.
Therefore, it is desirable to provide a heat-insulating cover for a czochralski crystal growing furnace and a czochralski crystal growing furnace, which can improve the oxidation of the heat-insulating layer.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a heat preservation cover for czochralski crystal growing furnace, include:
the side wall of the heat-insulating cover body comprises a feeding hole;
the heat insulation layer is coated on the outer wall of the heat insulation cover body and comprises a hollow area matched with the feed port;
the protective device is arranged on the outer periphery of the feed port, and the extending direction of the protective device is intersected with the extending direction of the heat-insulating cover body; protection device is including the first portion and the second portion that are connected, first portion is close to the one end of heat preservation cover body is first end, first end is the arc, the camber of first end with feed inlet department the camber of heat preservation cover body equals, first end with the outer peripheral edges laminating of feed inlet.
Optionally, the area of the first end is not smaller than the area of the feed inlet.
Optionally, the second portion protrudes from the first portion along a first direction to form a boss portion, and the first direction intersects with an extending direction of the protection device.
Optionally, the first portion and the second portion are both hollow cylinders, and the outer diameter of the second portion is larger than that of the first portion.
Optionally, at least part of the insulating layer is sandwiched between the second portion and the first portion.
Optionally, in the extending direction of the protection device, the height of the first portion is equal to the thickness of the insulating layer.
Optionally, the second portion includes two fixing holes oppositely arranged along the radial direction of the heat-insulating cover body;
the heat-insulating cover further comprises a binding wire, one end of the binding wire is fixed on one fixing hole, the other end of the binding wire surrounds the heat-insulating layer on the outer wall of the heat-insulating cover body, is fixed on the other fixing hole and fixes the heat-insulating layer.
Optionally, the strapping line is a molybdenum wire.
The utility model also provides a czochralski crystal growing furnace, include:
the furnace body comprises an accommodating cavity;
the heat preservation cover is arranged in the accommodating cavity and is the heat preservation cover in any one of claims 1 to 8.
Optionally, the method further includes: the feeding equipment is positioned outside the furnace body and comprises a feeding pipeline, and the feeding pipeline penetrates through the feeding port of the heat-preservation cover and silicon materials are added into the furnace body.
Compared with the prior art, the utility model provides a vertical pulling single crystal growing furnace keeps warm and covers and vertical pulling single crystal growing furnace has realized following beneficial effect at least:
the utility model provides a heat preservation cover body side wall in a heat preservation cover for a czochralski single crystal furnace, which comprises a feed inlet, wherein the heat preservation layer is coated on the outer wall of the heat preservation cover body and comprises a hollow area matched with the feed inlet; the protective device is arranged on the outer periphery of the feed port, and the extending direction of the protective device is intersected with the extending direction of the heat-insulating cover body; the protection device comprises a first part and a second part which are connected, one end of the first part, which is close to the heat-insulation cover body, is a first end, the first end is arc-shaped, the curvature of the first end is equal to that of the heat-insulation cover body at the feed inlet, and the first end is attached to the outer periphery of the feed inlet; when the first end through setting up the first portion of protection device is the arc, and the camber of first end is equal with the camber of feed inlet department heat preservation cover body, and protection device can laminate with the heat preservation cover body completely, can prevent the excessive high-temperature gas direct contact of heat preservation and feed inlet trompil department, reduces the oxidation of high-temperature gas to the heat preservation.
Of course, it is not necessary for any product of the present invention to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a cross-sectional view of a Czochralski crystal growing furnace provided by the present invention;
FIG. 2 is a structural diagram of a heat-preserving cover for a Czochralski single crystal growing furnace provided by the present invention;
FIG. 3 is a structural diagram of a protective device of an insulation cover for a Czochralski single crystal furnace provided by the utility model;
wherein, 1-a heat preservation cover body, 2-a heat preservation layer, 3-a feed inlet, 4-a protection device, 5-a crucible, 6-a small hole, 7-a binding line, 8-a heat preservation cover, 9-a furnace body, 10-a main chamber, 11-an auxiliary chamber, 12-an accommodating cavity and 13-a crucible edge, 14-support rod, 15-graphite heater, 16-electrode, 17-exhaust channel, 18-feeding device, 19-feeding pipeline, 41-first part, 42-second part, 411-first end, 421-boss part and X-first direction.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be discussed further in subsequent figures.
Referring to fig. 1, fig. 2 and fig. 3, fig. 1 is a sectional view of the czochralski crystal growing furnace provided by the present invention, fig. 2 is a structural diagram of the heat preservation cover for the czochralski crystal growing furnace provided by the present invention, fig. 3 is a structural diagram of the protection device of the heat preservation cover for the czochralski crystal growing furnace provided by the present invention, which illustrates a specific embodiment of the heat preservation cover for the czochralski crystal growing furnace provided by the present invention, comprising:
the heat preservation cover comprises a heat preservation cover body 1, wherein the side wall of the heat preservation cover body 1 comprises a feeding hole 2;
the heat preservation layer 3 is coated on the outer wall of the heat preservation cover body 1, and the heat preservation layer 3 comprises a hollow area matched with the feed port 2;
the protection device 4 is arranged on the outer periphery of the feed port 2, and the extending direction of the protection device 4 is intersected with the extending direction of the heat-insulating cover body 1; protection device 4 is including the first portion 41 and the second portion 42 that are connected, first portion 41 is close to the one end of heat preservation cover body 1 is first end 411, first end 411 is the arc, the camber of first end 411 with feed inlet 2 is located the camber of heat preservation cover body 1 equals, first end 411 with the outer peripheral edges laminating of feed inlet 2.
It can be understood that, the effect of heat preservation cover 8 is the thermal loss that reduces, and 1 lateral wall of heat preservation cover body includes feed inlet 2, and high-temperature gas (SiO) easily spills over from 2 openings in feed inlet, and the cladding of heat preservation 3 is at heat preservation cover body 1 outer wall, heat preservation 3 include with 2 assorted fretwork districts of feed inlet, if high-temperature gas can cause the oxidation to the heat preservation with 3 contacts of heat preservation, the utility model discloses in set up protection device 4, protection device 4 sets up the outer peripheral edges at feed inlet 2, and protection device 4's extending direction intersects with the extending direction of heat preservation cover body 1, and when protection device 4 and the first end 411 design of heat preservation cover body 1 laminating for the arc, the camber of first end 411 equals with the camber of 2 heat preservation cover bodies of feed inlet, protection device 4 can laminate with heat preservation cover body 1 completely, prevents the excessive high-temperature gas direct contact of heat preservation 3 and 2 trompils departments of feed inlet, reduces the oxidation of high-temperature gas to heat preservation 3.
In some alternative embodiments, with continued reference to FIGS. 2 and 3, the area of the first end 41 is no less than the area of the feed gap 2.
Alternatively, the area of the first end 41 is equal to or larger than the area of the feed port 2.
In this embodiment, only the area of the first end 41 is equal to the area of the feeding hole 2, and certainly, the area of the first end 41 can be larger than the area of the feeding hole 2, so that the first end 41 can cover the feeding hole 2, thereby preventing the high-temperature gas overflowing from the opening of the feeding hole 2 from directly contacting the inside of the insulating layer 3, and reducing the oxidation of the high-temperature gas to the inside of the insulating layer 3.
In some alternative embodiments, with continued reference to fig. 3, the second portion 42 protrudes from said first portion 41 along a first direction X forming a boss portion 421, the first direction X intersecting the extension direction of the protection device 4.
It can be understood that, since the second portion 42 protrudes from the first portion 41, that is, the area of the second portion 42 is larger than that of the first portion 41, the high-temperature gas is discharged from the inlet port 2 and contacts the inner wall of the first portion 41, but does not contact the heat insulating layer 3, so that the direct contact between the outside of the heat insulating layer 3 and the high-temperature gas overflowing from the opening of the inlet port 2 can be further prevented, and the oxidation of the high-temperature gas to the outside of the heat insulating layer 3 can be further reduced.
In some alternative embodiments, with continued reference to fig. 1 and 3, first portion 41 and second portion 42 are both hollow cylinders, and second portion 42 has an outer diameter that is greater than outer diameter 41 of first portion.
The feeding device 18 is positioned outside the furnace body 9, and one end of the feeding pipeline 19 is communicated with the feeding device 18 to feed materials to the crucible 5. It will be understood that the first portion 41 and the second portion 42 of the protection device 4 are both hollow cylinders, so that the feeding pipe 19 communicates with the feeding device 18 to feed the crucible 5; the outer diameter of the second portion 42 is larger than the outer diameter 41 of the first portion, i.e. the diameter of the second portion 42 is larger than the diameter of the opening of the feed opening 2, ensuring that the protection device 4 does not fall into the crucible 5. The outer diameter of the second portion 42 is larger than the outer diameter 41 of the first portion, so that a boss portion 421 is formed, the outer layer of the insulating layer 3 can be prevented from directly contacting with the high-temperature gas overflowing from the opening of the feed port 2, and the oxidation of the high-temperature gas to the insulating layer 3 is reduced.
In some alternative embodiments, with continued reference to fig. 1 and 2, at least a portion of insulation 3 is sandwiched between second portion 42 and first portion 41.
Optionally, in the thickness direction of the insulating layer 3, a part of the insulating layer 3 may be sandwiched between the second portion 42 and the first portion 41, or the whole insulating layer 3 may be sandwiched between the second portion 42 and the first portion 41.
In this embodiment, along the thickness direction of heat preservation 3, whole heat preservation 3 press from both sides and locate between second portion 42 and first portion 41, and protection device 4 has avoided heat preservation 3 and the excessive high-temperature gas direct contact of feed inlet 2 trompil department, reduces the oxidation of high-temperature gas to heat preservation 3.
In some alternative embodiments, with continued reference to fig. 1 and 2, the height of the first portion 41 is equal to the thickness of the insulating layer 3, in the extension direction of the protection device 4.
Along protection device 4's extending direction, the height of first portion 41 equals with heat preservation 3's thickness, has realized that whole heat preservation 3 press from both sides and locate between second portion 42 and first portion 41, has avoided heat preservation 3 and feed inlet 2 trompil department excessive high-temperature gas direct contact on the one hand, reduces the oxidation of high-temperature gas to heat preservation 3, and on the other hand, heat preservation 3 press from both sides and locate between second portion 42 and first portion 41, can make heat preservation 3 more level and more smooth.
In some alternative embodiments, with continued reference to fig. 2 and 3, the second portion 42 comprises two fixing holes 6 arranged oppositely in the radial direction of the heat-insulating cover body 1;
the heat preservation cover 8 further comprises a binding wire 7, one end of the binding wire 7 is fixed on one fixing hole 6, the other end of the binding wire surrounds the heat preservation layer 3 on the outer wall of the heat preservation cover body 1 and is fixed on the other fixing hole 6 to fix the heat preservation layer 3.
Two fixing holes 6 are reserved in the second portion 42 for fixing the insulating layer 3 with the binding wire 7 and preventing the position of the protection device 4 from being changed.
In some alternative embodiments, with continued reference to fig. 2, the lashing wire 7 is a molybdenum wire.
The binding wire 7 made of molybdenum wire can fix the insulating layer 3 through the fixing hole 6 while preventing the position of the protective device 4 from being changed.
With continued reference to fig. 1 and 2, a specific embodiment of a czochralski crystal growing furnace according to the present invention is described, comprising:
the furnace body 9, the furnace body 9 includes the holding chamber 12;
and the heat preservation cover 8 is arranged in the accommodating cavity 12.
It should be noted that, referring to fig. 1, the furnace body 9 further includes a main chamber 10, an auxiliary chamber 11 located at one side of the furnace body 9, the auxiliary chamber 11 is communicated with the main chamber 10, and the accommodating cavity 12 is disposed in the main chamber 10; the heat-insulating cover 8 is arranged in the accommodating cavity 12, the crucible 5 is also arranged in the accommodating cavity 12, the crucible 5 is used for accommodating silicon materials, a crucible edge 13 is sleeved outside the crucible 5, the bottom of the crucible edge 13 is connected with a supporting rod 14, the supporting rod 14 penetrates through the furnace body 9, a graphite heater 15 and an electrode 16 are arranged outside the crucible 5, and the heating and melting of the crucible 5 and the primary polycrystalline silicon and the temperature maintenance of the whole crystal growth process are realized; an exhaust passage 17 is arranged on one side of the furnace body 9 away from the auxiliary chamber 11; it will be appreciated that the purpose of the insulating cover 8 is to reduce heat losses whilst cooperating with the graphite heater 15 to form a reasonable temperature gradient field.
In some optional embodiments, with continued reference to fig. 1, further comprising: the feeding device 18 is positioned outside the furnace body 9, and comprises a feeding pipeline 19, wherein the feeding pipeline 19 penetrates through the feeding hole 2 of the heat-insulating cover 8 to feed silicon materials into the furnace body 9.
One end of a material pipeline 19 is connected with a feeding device 18, the feeding pipeline 19 penetrates through the feeding hole 2, and silicon materials can be added into the crucible 5 in the furnace body 9 through the feeding pipeline 19.
According to the embodiment, the utility model provides a heat preservation cover and czochralski crystal growing furnace for czochralski crystal growing furnace has realized following beneficial effect at least:
the utility model provides a czochralski crystal growing furnace is with cover and czochralski crystal growing furnace that keeps warm, it includes to keep warm to cover 8: the side wall of the heat-insulating cover body comprises a feed inlet; the heat-insulating layer is coated on the outer wall of the heat-insulating cover body and comprises a hollow area matched with the feed port; the protective device is arranged on the outer periphery of the feed port, and the extending direction of the protective device is intersected with the extending direction of the heat-insulating cover body; protection device is including the first portion and the second portion that are connected, the one end that first portion is close to the heat preservation cover body is first end, first end is the arc, the camber of first end equals with the camber of feed inlet department heat preservation cover body, the outer peripheral edges laminating of first end and feed inlet, first end design for ARC structure when protection device covers the body laminating with the heat preservation, the camber of first end equals with the camber of feed inlet department heat preservation cover body, can completely cover the body laminating with the heat preservation, can prevent the excessive high-temperature gas direct contact of heat preservation and feed inlet trompil department, reduce the oxidation of high-temperature gas to the heat preservation.
Although some specific embodiments of the present invention have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. A heat preservation cover for a czochralski single crystal furnace is characterized by comprising:
the side wall of the heat-insulating cover body comprises a feeding hole;
the heat insulation layer is coated on the outer wall of the heat insulation cover body and comprises a hollowed-out area matched with the feed port;
the protective device is arranged on the outer periphery of the feed port, and the extending direction of the protective device is intersected with the extending direction of the heat-insulating cover body; the protection device comprises a first portion and a second portion which are connected, the first portion is close to one end of the heat-insulation cover body and is an arc-shaped end, the curvature of the first end is equal to that of the heat-insulation cover body at the position of the feed inlet, and the first end is attached to the outer peripheral edge of the feed inlet.
2. The heat-insulating cover for the Czochralski single crystal growing furnace as claimed in claim 1, wherein the area of the first end is not smaller than the area of the feed opening.
3. The heat insulating cover for a Czochralski single crystal growing furnace as claimed in claim 1, wherein said second portion protrudes from said first portion to form a boss portion in a first direction, said first direction intersecting with an extending direction of said protecting means.
4. The heat insulating cover for a Czochralski single crystal growing furnace as claimed in claim 3, wherein the first portion and the second portion are both hollow cylinders, and the second portion has an outer diameter larger than that of the first portion.
5. The heat-insulating cover for the Czochralski single crystal growing furnace as set forth in claim 3, wherein at least a part of the heat-insulating layer is interposed between the second portion and the first portion.
6. The heat insulating cover for a Czochralski single crystal growing furnace as claimed in claim 1, wherein a height of the first portion is equal to a thickness of the heat insulating layer in an extending direction of the protecting means.
7. The heat-insulating cover for the Czochralski single crystal growing furnace as set forth in claim 5, wherein the second portion comprises two fixing holes oppositely disposed in a radial direction of the heat-insulating cover body;
the heat-insulating cover further comprises a binding wire, one end of the binding wire is fixed on one fixing hole, the other end of the binding wire surrounds the heat-insulating layer on the outer wall of the heat-insulating cover body, is fixed on the other fixing hole and fixes the heat-insulating layer.
8. The heat-insulating cover for the Czochralski single crystal growing furnace as claimed in claim 7, wherein the binding wire is a molybdenum wire.
9. A Czochralski single crystal growing furnace, comprising:
the furnace body comprises an accommodating cavity;
the heat preservation cover is arranged in the accommodating cavity and is the heat preservation cover in any one of claims 1 to 8.
10. The czochralski crystal growing furnace of claim 9, further comprising:
the feeding equipment is positioned outside the furnace body and comprises a feeding pipeline, and the feeding pipeline penetrates through the feeding port of the heat-preservation cover and silicon materials are added into the furnace body.
Priority Applications (1)
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CN202222286281.4U CN217973487U (en) | 2022-08-29 | 2022-08-29 | Heat preservation cover for Czochralski single crystal growing furnace and Czochralski single crystal growing furnace |
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CN202222286281.4U CN217973487U (en) | 2022-08-29 | 2022-08-29 | Heat preservation cover for Czochralski single crystal growing furnace and Czochralski single crystal growing furnace |
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CN217973487U true CN217973487U (en) | 2022-12-06 |
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CN202222286281.4U Active CN217973487U (en) | 2022-08-29 | 2022-08-29 | Heat preservation cover for Czochralski single crystal growing furnace and Czochralski single crystal growing furnace |
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