CN217933721U - Valve component, valve device and semiconductor equipment platform - Google Patents
Valve component, valve device and semiconductor equipment platform Download PDFInfo
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- CN217933721U CN217933721U CN202221825854.XU CN202221825854U CN217933721U CN 217933721 U CN217933721 U CN 217933721U CN 202221825854 U CN202221825854 U CN 202221825854U CN 217933721 U CN217933721 U CN 217933721U
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Abstract
The utility model provides a valve component, a valve device and a semiconductor equipment platform, wherein the valve component is arranged between a transmission cavity and a process cavity; the valve assembly includes: the main body comprises an upper surface, a first surface and a second surface, wherein the first surface is opposite to the second surface, the upper surface is connected with the first surface and the second surface, the first surface is connected with the process chamber, and the second surface is connected with the transmission chamber; the main body is provided with a delivery port penetrating through the first surface and the second surface, and the delivery port is used for communicating the transmission cavity and the process cavity; the main body is also provided with a gas channel, and the gas channel extends from the upper surface to the conveying port; and the purging device is arranged on the upper surface of the main body and is used for introducing purging gas into the conveying port through the gas channel. The utility model discloses both can realize the conveying of wafer and maintain the vacuum environment of process cavity, can also sweep gas to the supply of process cavity in to sweep the pollution granule in the process cavity, thereby guarantee the cleanliness factor in the process cavity.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a valve member, valving and semiconductor device platform.
Background
A semiconductor equipment platform generally comprises a transmission cavity and a process cavity arranged around the transmission cavity; the mechanical arm in the transmission cavity can convey the wafer into each process cavity for process treatment, such as etching and film deposition treatment, and can also take out the processed wafer from each process cavity. Since a closed vacuum environment is required to be maintained during the process treatment, especially during the thin film deposition treatment, in the process chamber, while a non-vacuum environment (e.g., an atmospheric pressure environment) is generally used in the transfer chamber, in order to maintain the vacuum environment in the process chamber, an isolation valve is usually installed between the transfer chamber and the process chamber to control the on/off between the transfer chamber and the process chamber.
The isolation valve may be embedded directly in the transfer chamber, but this mounting does not facilitate maintenance inspection of the isolation valve. In addition, when the isolating valve is opened, because the atmospheric pressure in the transmission cavity is higher than the atmospheric pressure in the process cavity, the gas in the transmission cavity can enter the process cavity through the isolating valve under the action of pressure difference, and therefore particle pollutants can be brought into the process cavity, the cleanliness inside the process cavity is damaged, and the yield of wafers is influenced. Therefore, there is a need for improvements in isolation valves.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a valve member, valving and semiconductor equipment platform both can realize the conveying of wafer and maintain the vacuum environment in the technology intracavity, can also supply to the technology intracavity and sweep gas to sweep the pollution granule in the technology intracavity, thereby guarantee the cleanliness factor in the technology intracavity.
In order to achieve the above purpose, the utility model discloses a following technical scheme realizes:
a valve assembly for a semiconductor device platform, the semiconductor device platform comprising: the device comprises a transfer chamber, a process chamber and a valve assembly, wherein the valve assembly is arranged between the transfer chamber and the process chamber; the valve assembly includes:
a body comprising a top surface, a first surface, and a second surface, the first surface opposite the second surface, the top surface coupled to the first surface and the second surface, the first surface coupled to the process chamber, the second surface coupled to the transfer chamber; the main body is provided with a delivery port penetrating through the first surface and the second surface, and the delivery port is used for communicating the transmission cavity and the process cavity; the main body is also provided with a gas channel, and the gas channel extends from the upper surface to the conveying port;
and the purging device is arranged on the upper surface of the main body and is used for introducing purging gas into the conveying opening through the gas channel.
Preferably, the purging device comprises a purging cover plate and a gas input; the purging cover plate is arranged on one side, close to the first surface, of the upper surface of the main body, and the gas input end is used for inputting purging gas into the gas channel.
Preferably, the purge cover plate comprises a hollow cavity, and the hollow cavity is communicated with the gas input end and the gas channel.
Preferably, the lower surface of the purge cover plate comprises a number of gas passages.
Preferably, the gas passages are uniformly or non-uniformly distributed on the lower surface of the purge cover plate along the direction from the first end to the second end of the purge cover plate.
Preferably, the gas input is provided at the first end and/or the second end of the purge cover plate.
Preferably, the gas channel is an integral channel.
Preferably, the gas channel includes a plurality of through holes in one-to-one correspondence with the gas passages.
Preferably, the main body is further provided with a movable channel, and the movable channel penetrates from the upper surface to the lower surface of the main body.
Preferably, a partition is disposed between the movable passage and the gas passage.
Preferably, the valve assembly further comprises: and the sealing cover plate is arranged on one side, close to the second surface, of the upper surface of the main body and is used for sealing the movable channel.
Preferably, when the gas input is provided at both the first end and the second end of the purge cover, a switching valve is provided between the gas input at the first end of the purge cover and the gas input at the second end of the purge cover, so that only one gas input feeds the purge gas into the gas channel.
Preferably, the pore size is different between different ones of said gas passages.
Preferably, the sealing cover plate and the purge cover plate are both attached to the main body by fasteners.
Preferably, the sealing cover plate and the abutting part of the purging cover plate and the main body are provided with sealing rings.
Preferably, the purge gas is an inert gas.
In another aspect, the present invention also provides a valve device for a semiconductor device platform, the semiconductor device platform includes: the device comprises a transmission cavity, a process cavity and a valve device, wherein the valve device is arranged between the transmission cavity and the process cavity; the valve device includes:
the valve assembly is the valve assembly;
the valve body is connected with the lower surface of the valve component.
On the other hand, the utility model also provides a semiconductor device platform, include:
a transfer chamber;
a process chamber;
as with the valve arrangement described above, the valve arrangement is disposed between the transfer chamber and the process chamber.
Preferably, the process chamber is an epitaxial chamber.
Compared with the prior art, the utility model at least has one of following advantage:
the utility model provides a valve component, a valve device and a semiconductor equipment platform, wherein the valve component is arranged between a transmission cavity and a process cavity; the main body of the valve component is provided with a transmission port for communicating the transmission cavity and the process cavity so as to transmit the wafer; the upper surface of main part sets up sweeps the device, and still sets up the gas passage who extends to the transfer port from its upper surface in the main part for sweep the device and can let in the transfer port and supply to the process chamber with sweeping gas through gas passage, with the pollution granule of sweeping the process chamber in, thereby guarantee the cleanliness factor in the process chamber, and then guarantee the yields of wafer.
In the utility model, when the valve body is maintained, only the sealing cover plate needs to be opened or taken down, and the transmission cavity and the process cavity do not need to be disassembled; simultaneously, sealed apron is located the upper surface of main part, the dismantlement and the maintenance of the valve body of being convenient for more. In the same way, the purging device is convenient to disassemble and maintain.
The utility model discloses well gas input can set up in the one end that the apron is close to the process chamber air inlet sweeps, and sets up in the first end and/or the second end that sweep the apron for sweep that gas can more have corresponding sweep and close on the position of first end and second end.
The utility model discloses in each through-hole correspond with gas passage and transfer port intercommunication, and can form one air wall from the sweeping gas body that the through-hole flows to make sweeping gas constantly enter into the process chamber from the transfer port inside, can also prevent that the process gas of process chamber is excessive.
The utility model discloses well valve body can set up the lower surface in the main part, and through the switch of valve body, can control the intercommunication and the isolation between transmission chamber and the process chamber to realize the conveying of wafer and maintain the vacuum environment of process chamber.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor device platform according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of a valve assembly according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a first surface side of a valve assembly according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a second surface side of a valve assembly according to an embodiment of the present invention;
fig. 5 is a schematic top sectional view of a valve assembly according to an embodiment of the present invention.
Detailed Description
The valve assembly, the valve device and the semiconductor device platform according to the present invention will be described in detail with reference to the accompanying drawings and the detailed description thereof. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. To make the objects, features and advantages of the present invention more comprehensible, please refer to the attached drawings. It should be understood that the structure, proportion, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be understood and read by those skilled in the art, and are not used for limiting the limitation of the implementation of the present invention, so that the present invention does not have the essential technical meaning, and any modification of the structure, change of the proportion relation or adjustment of the size should still fall within the scope that the technical content disclosed in the present invention can cover without affecting the function and the achievable purpose of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.
As shown in fig. 1, the present embodiment provides a semiconductor device platform, including: a transfer chamber 105; a process chamber 104; and a valve assembly 200 disposed between the transfer chamber 105 and the process chamber 104. Preferably, the process chamber 104 is an epitaxial chamber.
Specifically, in this embodiment, the number of the process chambers 104 is four, and all the process chambers 104 may be disposed around the transfer chamber 105 and form a sealed vacuum environment. More specifically, a vacuum robot 101 is disposed in the transfer chamber 105, and the vacuum robot 101 has a terminal blade 103 for lifting the wafer 102; a gas inlet 1041 is generally formed in a side surface of the process chamber 104, and is used for introducing process gas into the process chamber 104 to perform a process on the wafer 102; and the wafer 102 in the process chamber 104 is rotated by the susceptor, but the present invention is not limited thereto.
Specifically, in this embodiment, the semiconductor equipment platform generally further comprises an equipment front-end module for storing and transferring the wafer 102; and the equipment front end module comprises: a wafer cassette 111; a front end transfer chamber 110 communicating with the wafer cassette 111; and an interlock vacuum chamber 107 communicating with the front end transfer chamber 110 and the transfer chamber 105, respectively; an atmospheric robot 109 for transferring the wafer is further disposed in the front end transfer chamber 110, but the present invention is not limited thereto.
More specifically, for the semiconductor equipment platform, the specific flow of the process for transferring the wafer 102 from the cassette 111 to the process chamber 104 is as follows: step S1, the atmospheric robot 109 takes out the wafer 102 from the wafer cassette 111 and rotates in a three-axis linkage manner to a direction facing the interlock vacuum chamber 107; step S2, opening a gate valve 108 of the interlocking vacuum chamber 107, and conveying the wafer 102 to a support frame of the interlocking vacuum chamber 107 by the atmospheric manipulator 109 (the tail end of which is provided with a supporting sheet) and withdrawing; step S3, repeating steps S1 to S2 until the atmospheric robot 109 completely feeds all the wafers 102 in the wafer cassette 111 onto the support frame of the interlock vacuum chamber 107 and closes the gate valve 108; step S4, the vacuum robot 101 rotates and extends to the interlocking vacuum chamber 107, the isolation valve 106 is opened, and the wafer 102 is taken out from the support frame; step S5, the vacuum robot 101 retracts and rotates into the transmission chamber 105 and rotates to the direction of the valve device 200, the valve device 200 is opened, and the wafer 102 is conveyed to a bracket in the process chamber 104; step S6, the vacuum robot 101 exits the process chamber 104, and at this time, the wafer 102 is transferred from the wafer cassette 111 to the process chamber 104. Similarly, after the wafer 102 is subjected to a series of process treatments in the process chamber 104, the wafer 102 may be returned to the wafer box 111 from the process chamber 104 according to the reverse operation of the above-mentioned process, but the present invention is not limited thereto.
Specifically, in the present embodiment, the transfer chamber 105 is generally a non-vacuum environment, and the wafer 102 is processed (particularly, thin film deposition) in the process chamber 104 while maintaining a vacuum environment; at this time, the valve assembly 200 may control the on/off between the transfer chamber 105 and the process chamber 104 by a switch, thereby maintaining the vacuum environment in the process chamber 104. More specifically, the valve arrangement 200 is opened and the transfer chamber 105 and the process chamber 104 are in communication such that the vacuum robot 101 can transfer the wafer 102 between the transfer chamber 105 and the process chamber 104; after the wafer 102 is transferred, the valve device 200 is closed, the transfer chamber 105 is isolated from the process chamber 104, and the vacuum environment in the process chamber 104 can be maintained by evacuating the process chamber 104. Further, through valve device 200 can also to let in the purge gas in the process chamber 104 to the sweeping is taken into the pollution granule of process chamber 104, thereby guarantees cleanliness factor in the process chamber 104, and then guarantees the yields of wafer, nevertheless the utility model discloses do not use this as the limit.
Referring to fig. 1-2, the present embodiment provides a valve device 200 for a semiconductor device platform, the semiconductor device platform comprising: a transfer chamber 105, a process chamber 104, and a valve arrangement 200, the valve arrangement 200 being disposed between the transfer chamber 105 and the process chamber 104; the valve device 200 includes: a valve assembly; a valve body 204, said valve body 204 being connected to the lower surface of said valve component.
Specifically, in the present embodiment, the valve tongue of the valve body 204 can perform a telescopic motion in the valve assembly to open and close the valve body 204, so as to control the communication and isolation between the transfer chamber 105 and the process chamber 104; the valve assembly can then to let in the purge gas in the process chamber 104 to sweep the pollution granule of process chamber 104, thereby guarantee the cleanliness factor in the process chamber 104, and then guarantee the yields of wafer, nevertheless the utility model discloses do not use this as the limit.
Referring to fig. 2-5, the present embodiment provides a valve assembly for a semiconductor device platform, the semiconductor device platform comprising: a transfer chamber 105, a process chamber 104, and a valve assembly disposed between the transfer chamber 105 and the process chamber 104; the valve assembly includes: a body 203, the body 203 comprising a top surface, a first surface 2031 and a second surface, the first surface 2031 being opposite the second surface, the top surface connecting the first surface 2031 and the second surface, and the first surface 2031 connecting the process chamber 104, the second surface connecting the transfer chamber 105; the main body 203 is provided with a transfer port 206 penetrating through the first surface 2031 and the second surface, and the transfer port 206 is used for communicating the transfer chamber 105 and the process chamber 104; the main body 203 is further provided with a gas channel, and the gas channel extends from the upper surface to the delivery port 206; and a purging device arranged on the upper surface of the main body 203 and used for introducing purging gas into the conveying port through the gas passage.
Specifically, in this embodiment, the transfer port 206 communicates the transfer chamber 105 with the process chamber 104, so that the transfer of the wafer 102 between the transfer chamber 105 and the process chamber 104 can be realized through the transfer port 206, and meanwhile, the introduced purge gas can be supplied into the process chamber 104 through the transfer port 206 to purge the contamination particles in the process chamber 104, thereby ensuring the cleanliness in the process chamber 104, and further ensuring the yield of the wafer, but the present invention is not limited thereto.
Referring to fig. 2, 3 and 5, the purge device includes a purge cover 202 and a gas input 205; the purge cover 202 is disposed on a side of the upper surface of the main body 203 near the first surface, and the gas input 205 is used for inputting purge gas into the gas channel.
It is understood that in some other embodiments, the purge cap 202 includes a hollow cavity 2022, and the hollow cavity 2022 is in communication with the gas input 205 and the gas channel.
In some embodiments, the lower surface of the purge cap plate 202 includes a number of gas passages 2021, and the lower surface of the purge cap plate 202 is disposed opposite the upper surface.
Specifically, in this embodiment, the purge cover plate 202 may be connected to the main body 203 by a fastener 208, and a sealing ring is disposed at a position where the purge cover plate 202 abuts against the main body 203, so as to ensure airtightness between the purge cover plate 202 and the gas channel. The gas input 205 may be welded to the purge lid 202, and the gas input 205 is respectively communicated with a purge gas source and the hollow cavity 2022 of the purge lid 202 to supply the purge gas in the purge gas source into the hollow cavity 2022; each of the gas passages 2021 is respectively communicated with the hollow cavity 2022 and the gas channel, and is used for conveying the purge gas from the hollow cavity 2022 to the gas channel, so as to be conveyed to the delivery port 206 through the gas channel and further conveyed to the process chamber 104. Preferably, the purge gas is an inert gas, and the fastening member 208 is a screw, but the present invention is not limited thereto.
With continued reference to fig. 2 and 3, the gas input 205 is disposed at the first end and/or the second end of the purge lid 202; and the purge cover plate 202 is disposed from a first end to a second end, wherein the first end is the end on the right side in fig. 3, and the second end is the end on the left side in fig. 3. By providing the gas input 205 only at the first end or the second end, the purge force of the purge gas is maximized at the first end and the second end, so that the purge gas can more specifically purge locations adjacent to the first end and the second end.
It is understood that in some other embodiments, the gas passages 2021 are uniformly or non-uniformly distributed on the lower surface of the purge cover 202 in a direction from the first end to the second end of the purge cover 202.
In some embodiments, the pore size is not the same between different gas passages 2021.
In some embodiments, when the gas input 205 is disposed at both the first end and the second end of the purge cover 202, a switch valve is disposed between the gas input 205 at the first end of the purge cover and the gas input 205 at the second end of the purge cover, so that only one gas input 205 is used to introduce the purge gas into the gas channel, which facilitates selecting the gas input according to conditions and purging one end specifically, but the present invention is not limited thereto.
Specifically, in this embodiment, the distribution density or the pore size of the gas passages 2021 on the lower surface of the purge cover plate 202 may be non-uniform, so as to further control the purge gas, and the purge gas can specifically purge a certain position, but the present invention is not limited thereto.
With continued reference to fig. 2 and 3, the gas channel is an integral channel (not shown).
It will be appreciated that in some other embodiments, the gas channel includes a plurality of through holes 207 (shown in fig. 3) in one-to-one correspondence with the gas passages 2021.
Specifically, in the present embodiment, each of the through holes 207 is correspondingly communicated with the gas passage 2021 and the delivery port 206, and the through hole 207 and the hollow cavity 2022 are perpendicular to each other, so that the purge gas flowing out of the through hole 207 forms a gas wall, so that the purge gas continuously enters the process chamber 104 from the delivery port 206, and the process gas in the process chamber 104 is prevented from overflowing. More specifically, the entire purge process is as follows: the purge gas firstly enters the hollow cavity 2022 through the gas input end 205, then diffuses in the hollow cavity 2022 and enters the gas passage 2021, and then correspondingly enters the through hole 207 from the gas passage 2021, and finally flows out of the through holes 207 to the transfer port 206 and enters the process chamber 104, thereby purging the interior of the process chamber and reducing the deposition of contaminant particles, but the present invention is not limited thereto.
Referring to fig. 2, fig. 4 and fig. 5, the main body 203 further has a movable channel 209, and the movable channel 209 penetrates from the upper surface to the lower surface of the main body 203.
It will be appreciated that in some other embodiments, a partition is provided between the active channel 209 and the gas channel.
In some embodiments, the valve assembly further comprises: and the sealing cover plate 201, the sealing cover plate 201 is arranged on one side, close to the second surface, of the upper surface of the main body 203, and the sealing cover plate 201 is used for sealing the movable channel 209.
Specifically, in this embodiment, the valve body 204 of the valve device 200 may be disposed on the lower surface of the main body 203, and the valve tongue of the valve body 204 may perform a telescopic motion in the movable channel 209 to open and close the valve body 204, so as to control the communication and isolation between the transfer chamber 105 and the process chamber 104. The sealing cover plate 201 can also be connected to the main body 203 through the fastening member 208, and a sealing ring is arranged at the abutting position of the sealing cover plate 201 and the main body 203 to ensure the air tightness between the sealing cover plate 201 and the movable channel 209. More specifically, when the valve body 204 is repaired, only the sealing cover plate 201 needs to be opened or removed, and the transfer chamber 105 and the process chamber 104 do not need to be disassembled; meanwhile, the sealing cover plate 201 is positioned on the upper surface of the main body 203, so that the valve body 204 is more convenient to disassemble and maintain. Further, set up in activity passageway 209 with baffle between the gas passage then can guarantee gaseous purge process with the switch of valve body 204 does not influence each other, nevertheless the utility model discloses do not use this as the limit.
In summary, the present embodiments provide a valve assembly, a valve device and a semiconductor device platform, wherein the valve assembly is disposed between a transfer chamber and a process chamber; the body of the valve assembly has opposing first and second surfaces, and an upper surface connected to the first and second surfaces; the first surface is connected with the process cavity, the second surface is connected with the transmission cavity, and a transmission port penetrating through the first surface and the second surface is formed in the main body and is used for communicating the transmission cavity and the process cavity so as to transmit the wafer; the upper surface of main part sets up sweeps the device, and still sets up the gas passage who extends to the transfer port from its upper surface in the main part for sweep the device and can let in the transfer port and supply to the process chamber with sweeping gas through gas passage, with the pollution granule of sweeping the process chamber in, thereby guarantee the cleanliness factor in the process chamber, and then guarantee the yields of wafer.
In the embodiment, the valve body is maintained only by opening or taking down the sealing cover plate without detaching the transmission cavity and the process cavity; simultaneously, sealed apron is located the upper surface of main part, the dismantlement and the maintenance of the valve body of being convenient for more. In the same way, the purging device is convenient to disassemble and maintain.
The gas input end in this embodiment may be disposed at an end of the purge cover plate near the process chamber gas inlet and at the first end and/or the second end of the purge cover plate, so that the purge gas may more specifically purge locations near the first end and the second end.
In this embodiment, each through hole is correspondingly communicated with the gas passage and the delivery port, and the purge gas flowing out of the through holes forms a gas wall, so that the purge gas can enter the process chamber from the delivery port continuously, and meanwhile, the process gas in the process chamber can be prevented from overflowing.
In this embodiment, the valve body may be disposed on a lower surface of the main body, and the valve body may be opened and closed to control communication and isolation between the transfer chamber and the process chamber, thereby achieving wafer transfer and maintaining a vacuum environment in the process chamber.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (19)
1. A valve assembly for a semiconductor device platform, the semiconductor device platform comprising: a transfer chamber, a process chamber, and a valve assembly disposed between the transfer chamber and the process chamber; wherein the valve assembly comprises:
a body comprising a top surface, a first surface, and a second surface, the first surface opposite the second surface, the top surface coupled to the first surface and the second surface, the first surface coupled to the process chamber, the second surface coupled to the transfer chamber; the main body is provided with a delivery port penetrating through the first surface and the second surface, and the delivery port is used for communicating the transmission cavity and the process cavity; the main body is also provided with a gas channel, and the gas channel extends from the upper surface to the conveying port;
and the purging device is arranged on the upper surface of the main body and is used for introducing purging gas into the conveying port through the gas channel.
2. The valve assembly of claim 1, wherein the purge device comprises a purge cover and a gas input; the purging cover plate is arranged on one side, close to the first surface, of the upper surface of the main body, and the gas input end is used for inputting purging gas into the gas channel.
3. The valve assembly of claim 2, wherein the purge cover plate comprises a hollow cavity in communication with the gas input and the gas passage.
4. The valve assembly of claim 3, wherein the lower surface of the purge cover includes a plurality of gas passages.
5. The valve assembly of claim 4, wherein the gas passages are uniformly or non-uniformly distributed in the lower surface of the purge cover plate in a direction from the first end to the second end of the purge cover plate.
6. The valve assembly of claim 2 or 4, wherein the gas input is disposed at the first end and/or the second end of the purge cover.
7. The valve assembly of claim 4, wherein the gas passageway is a unitary passageway.
8. The valve assembly of claim 4, wherein the gas channel comprises a plurality of through-holes in one-to-one correspondence with the gas passages.
9. The valve assembly of claim 4, wherein said body further defines a motive passageway extending from an upper surface to a lower surface of said body.
10. A valve assembly according to claim 9, wherein a barrier is provided between the active passageway and the gas passageway.
11. The valve assembly of claim 10, further comprising: and the sealing cover plate is arranged on one side, close to the second surface, of the upper surface of the main body and is used for sealing the movable channel.
12. The valve assembly of claim 6, wherein when the gas inputs are provided at both the first and second ends of the purge cover, a switch valve is provided between the gas input at the first end of the purge cover and the gas input at the second end of the purge cover, such that only one gas input feeds the purge gas into the gas passageway.
13. The valve assembly of claim 4, wherein the apertures are different between different ones of said gas passageways.
14. The valve assembly of claim 11, wherein the sealing cover plate and the purge cover plate are both attached to the body by fasteners.
15. The valve assembly of claim 14, wherein sealing rings are provided at the location where the sealing cover plate and the purge cover plate abut the body.
16. The valve assembly of claim 1, wherein the purge gas is an inert gas.
17. A valve apparatus for a semiconductor equipment platform, the semiconductor equipment platform comprising: the device comprises a transmission cavity, a process cavity and a valve device, wherein the valve device is arranged between the transmission cavity and the process cavity; characterized in that said valve means comprises:
a valve assembly according to any one of claims 1 to 16;
the valve body is connected with the lower surface of the valve component.
18. A semiconductor device platform, comprising:
a transfer chamber;
a process chamber;
the valve assembly of claim 17 disposed between the transfer chamber and the process chamber.
19. The semiconductor device platform of claim 18, wherein the process chamber is an epitaxial chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221825854.XU CN217933721U (en) | 2022-07-14 | 2022-07-14 | Valve component, valve device and semiconductor equipment platform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221825854.XU CN217933721U (en) | 2022-07-14 | 2022-07-14 | Valve component, valve device and semiconductor equipment platform |
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| Publication Number | Publication Date |
|---|---|
| CN217933721U true CN217933721U (en) | 2022-11-29 |
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|---|---|---|---|
| CN202221825854.XU Active CN217933721U (en) | 2022-07-14 | 2022-07-14 | Valve component, valve device and semiconductor equipment platform |
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| Country | Link |
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| CN (1) | CN217933721U (en) |
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