CN217766897U - Inclined grating etching device - Google Patents

Inclined grating etching device Download PDF

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Publication number
CN217766897U
CN217766897U CN202222113610.5U CN202222113610U CN217766897U CN 217766897 U CN217766897 U CN 217766897U CN 202222113610 U CN202222113610 U CN 202222113610U CN 217766897 U CN217766897 U CN 217766897U
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guide rail
servo motor
substrate
ion source
source generator
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CN202222113610.5U
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Chinese (zh)
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赤赫
冒新宇
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Beijing Zhige Technology Co ltd
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Beijing Zhige Technology Co ltd
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Abstract

The utility model relates to an inclined grating etching device, which comprises an ion source generator, a substrate base, a movable guide rail frame and a metal cantilever, wherein the center of the substrate base is used for fixing a substrate to be etched, and the movable guide rail frame and the metal cantilever can be horizontally placed on the ground; the movable guide rail frame comprises a guide rail cavity, a guide rail and a workbench which are sequentially arranged from bottom to top; a first servo motor is arranged in the guide rail cavity, the guide rail cavity is electrically connected with the first servo motor, and the rotation angle of the guide rail cavity is determined through the rotation angle of the first servo motor; the guide rail is fixedly connected with the guide rail cavity; a table supporting a substrate base; the ion source generator is fixedly connected with the metal cantilever, so that the ion source generator and the workbench are at the same horizontal height.

Description

Inclined grating etching device
Technical Field
The utility model relates to a slope grating sculpture technical field especially relates to a slope grating sculpture device.
Background
Gratings are widely used in daily life, for example, in the manufacture of AR glasses.
The existing commonly used grating is generally made by using a holographic grating mask, light and shade alternate interference fringes are formed by overlapping two beams of coherent plane waves at a grating substrate, the interference fringes are coated on a photoresist of the substrate to form a refractive index modulation grating, a relief-shaped photoresist grating is formed according to different dissolution speeds of excited molecules in a developing solution, a final grating structure is formed by plasma etching, and the optical effect of the grating is applied to various fields.
Plasma etching refers to that an ion beam is generated by matching a plasma etching machine with corresponding gas, in the process of plasma etching, a substrate to be etched passes through the ion beam and is etched by bombarding the substrate by the ion beam, and vertical etching is not abnormal, but when the etching is carried out on an inclined grating with a certain angle, because the substrate to be etched deflects by a certain angle, the strokes of the ion beam bombarding different points of the substrate to be moved are different, a part with a long stroke is bound to have larger energy loss, so that the etched grating has local difference on the structure and the groove depth, and the obtained grating has the defects of transverse unevenness and low accuracy.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
In view of the above-mentioned shortcoming, the deficiency of prior art, the utility model provides a slope grating etching device, it has solved that sculpture one-dimensional slope grating exists horizontal inhomogeneous, the technical problem that the accuracy is low.
(II) technical scheme
In order to achieve the above object, the utility model provides a slope grating etching device, the device includes:
the etching device comprises an ion source generator and a substrate base, wherein the center of the substrate base is used for fixing a substrate to be etched, and the etching device also comprises a movable guide rail bracket and a metal cantilever which can be horizontally placed on the ground;
the movable guide rail frame comprises a guide rail cavity, a guide rail and a workbench which are sequentially arranged from bottom to top;
a first servo motor is arranged in the guide rail cavity, the guide rail cavity is electrically connected with the first servo motor, and the rotation angle is achieved through the first servo motor;
the guide rail is fixedly connected with the guide rail cavity;
the worktable supports the substrate pedestal;
the ion source generator is fixedly connected with the metal cantilever, and the ion source generator and the workbench are at the same horizontal height.
Optionally, a second servo motor is further included;
the workbench comprises a supporting base, a rotating shaft vertically arranged in the center of the supporting base and a carrying plate surface fixedly arranged on the rotating shaft;
the second servo motor is arranged in the supporting base;
the bottom of the supporting base is embedded in the guide rail and is electrically connected with the second servo motor, and the second servo motor drives the workbench to move along the guide rail in the direction close to or far away from the ion source generator.
Optionally, the device further comprises a third servo motor, wherein the third servo motor is arranged inside the rotating shaft, the rotating shaft is electrically connected with the third servo motor, and the rotating shaft and the angle of the carrier surface are rotated by the third servo motor.
Optionally, the carrying plate surface is provided with at least two bolt through holes, and the carrying plate surface is fixedly connected with the substrate base through bolts.
Optionally, the minimum distance between the ion source generator and the surface of the carrier plate is 240mm.
Optionally, the ion source generator is fixed by the metal cantilever at a height of 1.5m from a horizontal ground.
Optionally, the substrate pedestal can hold a substrate to be etched having a dimension of 3 x 3 inches to 5 x 5 inches.
Optionally, the length of the rail is 660mm.
Optionally, the moving speed of the workbench along the guide rail is 5mm/s.
Optionally, the rotation angle of the guide rail cavity is 0 ≦ rotation angle <90 °.
(III) advantageous effects
The utility model provides a slope grating etching device owing to adopt portable guide rail frame, including guide rail chamber, guide rail and the first servo motor of setting in guide rail intracavity portion, through the angle of servo motor change guide rail, the sculpture identical that takes place when making the base plate move along the guide rail during each point process ion beam has solved the slope grating after the sculpture and has had horizontal inhomogeneous problem, has improved the precision of slope grating.
Drawings
Fig. 1 is a front sectional view of an inclined grating etching apparatus according to an embodiment of the present invention;
fig. 2 is a top view of an inclined grating etching apparatus according to an embodiment of the present invention;
fig. 3 (a) is a schematic view of a vertical etching process according to an embodiment of the present invention;
fig. 3 (b) and fig. 3 (c) are schematic diagrams comparing the etching without moving the guide rail and the etching with moving the guide rail according to an embodiment of the present invention.
[ instruction of reference ]
1: an ion source generator;
2: a substrate base;
3: a substrate to be etched;
4: a movable guide rail bracket;
40: a guide rail;
41: a guide rail cavity;
5: a work table;
51: a support base;
52: a rotating shaft;
53: carrying a plate surface;
6: a metal cantilever;
101: a first servo motor;
102: a second servo motor;
103: and a third servo motor.
Detailed Description
For a better explanation of the present invention, for the sake of understanding, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Example 1
As shown in fig. 1, fig. 1 is a front cross-sectional view of an inclined grating etching apparatus according to an embodiment of the present invention.
The inclined grating etching device provided by the embodiment comprises an ion source generator 1 and a substrate base 2, wherein the center of the substrate base 2 can be used for fixing a substrate 3 to be etched, and the inclined grating etching device further comprises a movable guide rail frame 4 and a metal cantilever 6 which can be horizontally placed on the ground.
In a specific application, one end of the metal cantilever 6 can also be fixed at any fixable position, such as a wall, a ceiling and the like.
The movable guide rail bracket 4 comprises a guide rail cavity 41, a guide rail 40 and a workbench 5 which are sequentially arranged from bottom to top; the guide rail 40 is fixedly connected with the guide rail cavity 41; a first servo motor 101 is arranged in the guide rail cavity 41, the guide rail cavity 41 is electrically connected with the first servo motor 101, and the rotation angle of the guide rail cavity is determined by the rotation angle of the first servo motor 101; the table 5 is used to support the substrate base 2.
In practical application, the rotation angle of the guide rail cavity 41 can be set to be 0 or more and less than 90 degrees, and meanwhile, vertical etching and inclined grating etching at other angles are met, so that the applicability is high.
The ion source generator 1 is fixedly connected with the metal cantilever 6, and the metal cantilever 6 is used for fixing the position of the ion source generator 1, so that the ion source generator 1 and the workbench 5 are at the same horizontal height.
The inclined grating etching apparatus provided in this embodiment may further include a second servo motor 102, configured to drive the workbench 5 to move along the guide rail.
Specifically, the worktable 5 mainly includes a supporting base 51, a rotating shaft 52 vertically disposed at the center of the supporting base 51, and a carriage surface 53 fixedly disposed on the rotating shaft 52.
The second servo motor 102 is disposed inside the support base 51.
The bottom of the supporting base 51 is embedded on the guide rail 40 and electrically connected with the second servo motor 102, and the second servo motor 102 drives the worktable 5 to move along the guide rail 40 in a direction close to or far away from the ion source generator 1 through the supporting base 51.
The tilted grating etching apparatus provided in this embodiment may further include a third servo motor 103, where the third servo motor 103 is disposed inside the rotating shaft 52, the rotating shaft 52 is electrically connected to the third servo motor 103, and the third servo motor 103 rotates the rotating shaft 52 and the carrier plate surface 53 by an angle.
In practical applications, in order to maintain the accuracy of the rotation angle between the guide rail cavity 41 and the rotation shaft 52, an angle sensor connected to the guide rail cavity 41 and the rotation shaft 52 is further provided in some embodiments.
In this embodiment, the carrier plate surface 53 is provided with at least two bolt through holes for fixing the substrate base 2 by bolts.
In the specific operation, the substrate pedestal 2 of the embodiment can fix the substrate 3 to be etched with the size ranging from 3 × 3 inches to 5 × 5 inches; in other embodiments, in order to better adapt to the substrate, the size of the substrate base 2 may also vary according to the size variation of the substrate 3 to be etched, so that the carrier plate surface 53 may be provided with a plurality of bolt through holes, for example, in one embodiment, the carrier plate surface 53 is provided with 20 bolt through holes, and the substrate base 2 is replaced and fixed by using bolt through holes at different positions.
According to the inclined grating etching device provided by the embodiment, the rotatable angle range of the guide rail cavity 41 is controlled to be 0-90 degrees, the guide rail 40 is fixedly connected with the guide rail cavity 41, the angle between the guide rail cavity 41 and the guide rail 40 is changed through the first servo motor 101, the angle requirement of a full-angle grating can be met, and the application range is wide.
Example 2
As shown in fig. 2, fig. 2 is a top view of an inclined grating etching apparatus provided in another embodiment of the present application.
In the present embodiment, in order to better describe the relative position relationship of the components of the device in the present embodiment, a more detailed description is given here by means of an xyz rectangular coordinate system.
Establishing an xyz rectangular coordinate system by taking a straight line where the guide rail 40 is located as a z-axis and taking a middle point of the guide rail 40 as a coordinate origin; in the xyz rectangular coordinate system, the initial positional relationship of each component of the tilted grating device provided in this embodiment is set as follows:
the ion source generator 1 is fixedly arranged on a plane formed by an xy axis by a metal cantilever 6, the generated ion beam moves along the direction parallel to the negative axis of the x axis, and the height of the ion source generator 1 is the same as that of the workbench 5.
The table 5 moves along the guide rail 40 in a plane formed by the yz axis, and the moving track is parallel to the z axis.
In the embodiment shown in fig. 2, the length of the guide rail 40 is preferably 660mm, the ion source generator 1 is fixed at a height of 1.5m from the horizontal ground by the metal cantilever 6, so that the generated ion beam just intersects with the moving track of the worktable 5, and when the worktable 5 drives the substrate 3 to be etched to move along the track, the minimum distance between the ion source generator 1 and the substrate 3 to be etched is 240mm; the ion source generator 1 can generate an ion beam with the intensity of 100mA, 500V; the single movement stroke of the workbench 5 is set to be 360mm, the moving speed is set to be 5mm/s, and the time consumed by single operation is 72s.
In practical applications, the above parameters such as height, strength, shape, speed, etc. can be adjusted according to practical situations, and are only set as a set of parameters in this embodiment, and cannot be taken as a limitation.
In addition, in some embodiments, the ion source generator 1 may be a device for exciting fluorine ions in an etching gas such as trifluoromethane to generate a fluorine ion beam, and the ion source generator 1 may include a reaction chamber and an ion source window, and the etching gas is filled in the reaction chamber at a predetermined pressure and ratio. The corrosive gas in the reaction cavity obtains energy under the action of a high-frequency electric field, and generates inelastic collision with molecules or atoms in the gas to generate secondary electron emission, and the secondary electron emission further collides with the gas molecules to ionize, and continuously excites or ionizes the gas molecules. The discharge can continue to be maintained continuously as the electron generation and extinction processes reach equilibrium. Ions, electrons and free radicals (atoms, molecules or atomic groups in a free state) generated by inelastic collision are called plasmas, have strong chemical activity, can perform chemical corrosion reaction with atoms on the surface of a substrate to be etched to form volatile substances which can be taken away by airflow, so that the purpose of corroding the surface layer of a sample is achieved, the relief-shaped photoresist grating is exposed in a region to be etched, and the part which does not need to be etched is coated with photoresist, so that the relief-shaped photoresist grating is very stable and can protect the covered substrate from being etched for a long time.
In order to better describe the tilted grating etching apparatus of the present application, a detailed description is given below of a specific embodiment:
in a specific embodiment, based on the tilted grating etching apparatus provided in the above embodiment, the tilted grating is etched at a tilt angle of 45 ° and a size of 4 × 4 inches.
In the embodiment, a quartz substrate is selected as a substrate 3 to be etched, the quartz substrate is bonded to the center of the substrate base 2 through a high-temperature adhesive tape, and the substrate 3 to be etched is a pre-processed relief-shaped photoresist grating.
According to the condition that the set inclination angle is 45 degrees, the first servo motor 101 drives the guide rail cavity 41 and the guide rail 40 to rotate, and the rotation is anticlockwise rotated to the position that the z axis is 45 degrees away from the x axis by taking the original point as a rotation center.
The third servo motor 103 drives the rotating shaft 52 to rotate counterclockwise, and the rotating shaft 52 drives the carriage surface 53 to rotate to be parallel to the guide rail 40 meeting the inclination angle.
Of course, in other embodiments, the operations of the first servo motor 101 and the third servo motor 103 are not sequential, and may be performed simultaneously or the third servo motor 103 is performed first, and so on, which are not limited herein.
Specifically, after the angle between the guide rail 40 and the carriage plate surface 53 meets the preset requirement:
the ion source generator 1 is powered on and started to continuously emit uniform parallel ion beams, and the area where the ion beams intersect with the motion trail of the workbench 5 is called an etching area.
The supporting base 51 is electrically connected with the second servo motor 102, the second servo motor 102 works to drive the workbench 5 to move at a constant speed of 5mm/s along the guide rail 40, and the workbench passes through the etching area, and the ion beam bombards the substrate 3 to be etched to generate a 45-degree etching groove with a certain depth.
In some embodiments in practical applications, in order to maintain uniformity, stability and high quality of the etched grooves of the manufactured tilted gratings, the second servo motor 102 is further configured to drive the worktable 5 to make a uniform reciprocating motion on the guide rail 40, so as to achieve a plurality of accumulated intended etched groove depths of the substrate 3 to be etched.
For example, in an embodiment, the expected etching groove depth of the substrate 3 to be etched is about 200nm, the etched depth rate of the substrate 3 with etching passing through the etching region is 1.2nm/s, and if the width of the etching region is 5mm, the substrate 3 to be etched passes through the etching region at a speed of 5mm/s, the single etching groove depth of the substrate 3 to be etched is 1.2nm, and after passing through the etching region for 167 times in a cumulative manner, the tilted grating meeting the expected etching groove depth can be obtained.
As shown in fig. 3 (a), fig. 3 (b), and fig. 3 (c), fig. 3 (a) is a schematic diagram of vertical etching provided in an embodiment of the present application, and fig. 3 (b) and fig. 3 (c) are schematic diagrams comparing the rail non-moving and tilting etching and the rail moving and tilting etching provided in an embodiment of the present application.
In fig. 3 (b), the ion beam arrow starting from the ion source points to the substrate to be etched, the substrate to be etched moves along the track without changing the angle (i.e. the initial setting angle), the sample moves with the horizontal etching surface always forming an inclination angle in the moving process, so that the process that each point of the substrate is far from the ion source is obviously inconsistent, the ion beam moving process for bombarding different points of the substrate is different, and the problem of uneven inclined grating structure is also existed after the ion beam is ensured to be stable. In fig. 3 (a) and 3 (c), the ion beam field energy received by each point of the substrate to be etched is consistent by combining the moving direction and the sample placement, so that the problem of non-uniform transverse structure in etching can be solved, and the generated grating has high quality and good uniformity.
The utility model provides a pair of slope grating etching device owing to adopt portable guide rail frame, including guide rail chamber, guide rail and the first servo motor of setting in guide rail intracavity portion, through the angle of first servo motor change guide rail, the cooperation sets up at the inside second servo motor of rotation axis simultaneously, says the east the carrier face angle is unanimous with the guide rail, and the sculpture that takes place when making every point process ion beam when the base plate moves along the guide rail is identical, has solved under the stable prerequisite of line, and the slope grating after the sculpture still has horizontal inhomogeneous problem, sets up the at the uniform velocity back and forth movement of workstation simultaneously, and the multiple accumulation acquires suitable groove depth, has improved slope grating's precision, stability and quality, makes the grating that produces brighter.
In the description of the present invention, it is to be understood that the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; either internal to the two elements or in an interactive relationship of the two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless otherwise expressly stated or limited, a first feature may be "on" or "under" a second feature, and the first and second features may be in direct contact, or the first and second features may be in indirect contact via an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lower level than the second feature.
In the description herein, the description of the terms "one embodiment," "some embodiments," "an embodiment," "an example," "a specific example" or "some examples" or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
While embodiments of the present invention have been shown and described, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that modifications, alterations, substitutions and variations may be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.

Claims (10)

1. An inclined grating etching device comprises an ion source generator (1) and a substrate base (2), wherein the center of the substrate base (2) is used for fixing a substrate (3) to be etched, and the inclined grating etching device is characterized by further comprising a movable guide rail frame (4) and a metal cantilever (6), wherein the movable guide rail frame and the metal cantilever can be horizontally placed on the ground;
the movable guide rail bracket (4) comprises a guide rail cavity (41), a guide rail (40) and a workbench (5) which are sequentially arranged from bottom to top;
a first servo motor (101) is arranged in the guide rail cavity (41), the guide rail cavity (41) is electrically connected with the first servo motor (101), and the rotation angle of the guide rail cavity is determined through the first servo motor (101);
the guide rail (40) is fixedly connected with the guide rail cavity (41);
the worktable (5) supports the substrate base (2);
the ion source generator (1) is fixedly connected with the metal cantilever (6), and the ion source generator (1) and the workbench (5) are positioned at the same horizontal height.
2. The apparatus of claim 1, further comprising a second servo motor (102);
the workbench (5) comprises a supporting base (51), a rotating shaft (52) vertically arranged at the center of the supporting base (51) and a carrying plate surface (53) fixedly arranged on the rotating shaft (52);
the second servo motor (102) is arranged in the supporting base (51);
the bottom of the supporting base (51) is embedded on the guide rail (40) and is electrically connected with the second servo motor (102), and the second servo motor (102) drives the workbench (5) to move in the direction close to or far away from the ion source generator (1) along the guide rail (40) through the supporting base (51).
3. The apparatus of claim 2, further comprising a third servo motor (103);
a third servo motor (103) is provided inside the rotating shaft (52), the rotating shaft (52) is electrically connected to the third servo motor (103), and the rotating shaft (52) and the carriage surface (53) are rotated by the third servo motor (103) at an angle.
4. The tilted grating etching apparatus according to claim 2,
the carrying plate surface (53) is provided with at least two bolt through holes, and the carrying plate surface (53) is fixedly connected with the substrate base (2) through bolts.
5. The tilted grating etching apparatus according to claim 2,
the minimum distance between the ion source generator (1) and the carrier plate surface (53) is 240mm.
6. The tilted grating etching apparatus according to claim 1,
the ion source generator (1) is fixed at a height of 1.5m from the horizontal ground by the metal cantilever (6).
7. The tilted grating etching apparatus according to claim 1,
the substrate holder (2) is capable of holding a substrate (3) to be etched having a dimension of 3 x 3 inches to 5 x 5 inches.
8. The tilted grating etching apparatus according to claim 1,
the length of the guide rail (40) is 660mm.
9. The tilted grating etching apparatus according to claim 1,
the moving speed of the workbench (5) along the guide rail (40) is 5mm/s.
10. The tilted grating etching apparatus according to claim 1,
the guide rail cavity (41) can rotate by an angle which is not less than 0 degrees and is less than 90 degrees.
CN202222113610.5U 2022-08-11 2022-08-11 Inclined grating etching device Active CN217766897U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510089A (en) * 2024-01-05 2024-02-06 成都国泰真空设备有限公司 Ion beam etching equipment for glass surface treatment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117510089A (en) * 2024-01-05 2024-02-06 成都国泰真空设备有限公司 Ion beam etching equipment for glass surface treatment
CN117510089B (en) * 2024-01-05 2024-04-23 成都国泰真空设备有限公司 Ion beam etching equipment for glass surface treatment

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