CN217693862U

CN217693862U - Radio frequency circuit board, radio frequency module and terminal equipment

Info

Publication number: CN217693862U
Application number: CN202220850346.0U
Authority: CN
Inventors: 孙江涛; 黄清华; 李政; 张博; 柴固恒
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2022-04-13
Filing date: 2022-04-13
Publication date: 2022-10-28
Anticipated expiration: 2032-04-13

Abstract

The application provides a radio frequency circuit board, a radio frequency module and a terminal device. The radio frequency circuit board comprises a compatible circuit arranged in the substrate and a first welding area and a second welding area which are arranged on the surface of the substrate. And the first welding area and the second welding area are provided with welding pads electrically connected with the compatible circuit. The first welding area is matched with any one of a first power amplifier module of the first radio frequency module and a second power amplifier module of the second radio frequency module, and the first welding area is used for welding the first or second power amplifier module. The second welding area is matched with a third power amplifier module of the second radio frequency module and is used for welding the third power amplifier module. Because the welding area of the radio frequency circuit board and the compatible circuit can be compatible with components contained in different radio frequency modules, the common-board compatibility of the radio frequency modules supporting different network modes can be realized, the development period of the radio frequency circuit board can be effectively shortened, and the development cost of the radio frequency circuit board can be reduced.

Description

Radio frequency circuit board, radio frequency module and terminal equipment

Technical Field

The application relates to the technical field of radio frequency communication, in particular to a radio frequency circuit board, a radio frequency module and a terminal device.

Background

With the development and progress of communication technology, 5G mobile communication technology is gradually beginning to be applied to communication devices, such as mobile phones, tablet computers, and the like. The 5G networking mode includes a Non-stand alone (NSA) mode and a Stand Alone (SA) mode. In the NSA mode, the NSA mode is a one-to-many networking mode, and one Core network has two types of base stations, that is, a combination mode of a 4G Core network (LTE)/5G Core network (NR Core) +4G base station (EPC) +5G base station (NR). In the SA mode, a core network is configured with a base station, and in the SA mode, end-to-end synchronization supports 5G network communication, that is, 5G base stations are deployed based on a 5G core network, and therefore, the SA mode is called "independent" networking.

In communication equipment, a radio frequency module is used for realizing radio frequency energy and information transmission, and is a core component for realizing a wireless communication function of the communication equipment. The rf module generally includes an rf circuit board and components on the rf circuit board. For a communication device supporting 5G communication technology, the radio frequency circuit board designs corresponding to the 5G SA mode and the 5G NSA mode are different, and the two modes are not compatible. In addition, for low-end and medium-end products supporting 5G communication technology, the design of the radio frequency circuit board is different, and the two are not compatible. In the product development stage, different radio frequency circuit boards need to be designed for low-end products and medium-end products supporting the 5G communication technology, products supporting the 5G SA mode, and products supporting the 5G NSA mode, which undoubtedly increases the development difficulty, prolongs the development period, and increases the development cost. Therefore, there is a need for a solution for compatibility of rf circuit boards, which is used to implement common-board compatibility of rf modules of products with various specifications (e.g., low/medium/high) and products supporting different network modes (e.g., 5G SA mode and 5G NSA mode).

SUMMERY OF THE UTILITY MODEL

The application provides a radio frequency circuit board, radio frequency module and terminal equipment, the radio frequency circuit board can realize that the radio frequency module of different specifications and different network mode's terminal equipment is compatible altogether to can reduce effectively the development degree of difficulty of radio frequency circuit board, shorten the development cycle of radio frequency circuit board, reduction the development cost of radio frequency circuit board, and then be favorable to reducing the research and development and the manufacturing cost of terminal equipment's radio frequency module.

In a first aspect, the present application provides a radio frequency circuit board comprising a substrate, a compatible circuit disposed in the substrate, and a first soldering region and a second soldering region disposed on a surface of the substrate. A pad electrically connected to the compatible circuit is provided in each of the first bonding area and the second bonding area. The first welding area is matched with any one of a first power amplifier module of a first radio frequency module and a second power amplifier module of a second radio frequency module, and the first welding area is used for welding the first power amplifier module or the second power amplifier module. The second welding area is matched with a third power amplifier module of the second radio frequency module and is used for welding the third power amplifier module. The compatible circuit is electrically connected to the first power amplifier module or the second power amplifier module soldered on the first soldering region through a pad in the first soldering region, and is electrically connected to the third power amplifier module soldered on the second soldering region through a pad in the second soldering region.

In the radio frequency circuit board provided by the embodiment of the application, because the welding area and the compatible circuit can be compatible with components and parts contained in different radio frequency modules, different radio frequency circuits can be obtained through the same radio frequency circuit board, so that the common-board compatibility of the radio frequency modules supporting different network modes is realized, and the common-board compatibility of the radio frequency modules of terminal equipment in different regions and different specifications can be realized. Meanwhile, the development difficulty of the radio frequency circuit board can be effectively reduced, the development period of the radio frequency circuit board is shortened, and the development cost of the radio frequency circuit board is reduced, so that the development and production cost of a radio frequency module of the terminal equipment is reduced.

In practical application, according to the requirement of the networking mode supported by the radio frequency module, required components are welded on the radio frequency circuit board, and the radio frequency module supporting the first networking mode of the first network or the radio frequency module supporting the second networking mode of the first network can be obtained.

In one embodiment, the radio frequency circuit board further includes a third soldering region provided on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is provided in the third soldering region. The third welding area is matched with the signal receiving module of the first radio frequency module or the signal receiving module of the second radio frequency module and is used for welding the signal receiving module, and the compatible circuit is electrically connected with the signal receiving module welded on the third welding area through a bonding pad in the third welding area.

In one embodiment, the radio frequency circuit board further includes a fourth bonding area disposed on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is disposed in the fourth bonding area. The fourth welding area is used for welding the low noise amplifier module and the filtering unit of the second radio frequency module, and the compatible circuit is also electrically connected with the low noise amplifier module and the filtering unit which are welded on the fourth welding area through corresponding bonding pads in the fourth welding area respectively.

In one embodiment, the rf circuit board further includes a fifth bonding area disposed on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is disposed in the fifth bonding area. The fifth welding area is matched with a fourth power amplifier module of the first radio frequency module or a fourth power amplifier module of the second radio frequency module and is used for welding the fourth power amplifier module, and the compatible circuit is also electrically connected with the fourth power amplifier module welded on the fifth welding area through a bonding pad in the fifth welding area.

In a second aspect, the present application provides a radio frequency module that supports a first networking mode of a first network. The radio frequency module comprises the radio frequency circuit board and a first power amplifier module. The first power amplifier module is soldered in the first soldering region and electrically connected to the compatible circuit through a soldering pad in the first soldering region, wherein the first power amplifier module is configured to perform power amplification on the radio frequency signal of each frequency band of the network supported by the radio frequency module.

In one embodiment, the first power amplifier module includes an LMH LPAMiD device that is matched to the first bonding region in shape and size, and the LMH LPAMiD device includes pins that are connected in a one-to-one correspondence with pads provided on the first bonding region.

In this embodiment, the radio frequency module integrates MMMB PA, GSM PA, ASM, LNA BANK, a filtering unit (such as a filter and a duplexer) and the like into the LMH LPAMiD device in a module manner, so as to avoid using a plurality of external power amplifier devices, switching devices, filtering devices and the like, improve the integration level of the radio frequency module, and thus reduce the area occupied by the components included in the radio frequency module on the radio frequency circuit board. In addition, due to the improvement of the integration level of components, the architecture of the radio frequency module is simplified, and the wiring complexity, the development difficulty and the development cost of the radio frequency circuit board are reduced.

In an embodiment, the rf module further includes a signal receiving module, and the signal receiving module is configured to receive an rf signal of a network supported by the rf module. The radio frequency circuit board further comprises a third welding area arranged on the surface of the substrate, wherein a bonding pad electrically connected with the compatible circuit is arranged in the third welding area, and the signal receiving module is welded in the third welding area and electrically connected with the compatible circuit through the bonding pad in the third welding area. The signal receiving module comprises an LMH LDiFEM device, the LMH LDiFEM device is matched with the third welding area in shape and size, and the LMH LDiFEM device comprises pins connected with the pads arranged on the third welding area in a one-to-one correspondence mode.

In one embodiment, the radio frequency circuit board further includes a fourth bonding area disposed on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is disposed in the fourth bonding area. The second weld area and the fourth weld area are left empty.

In one embodiment, the first network comprises a 5G network, and the first networking mode is an SA mode of the 5G network.

In one embodiment, the rf module further supports a second network and a third network, wherein the second network includes a 3G network and a 4G network, and the third network includes a 2G network.

The first power amplifier module is used for performing power amplification on the radio-frequency signals of each frequency band of the first network and the second network. The radio frequency module further comprises a fourth power amplifier module, and the fourth power amplifier module is used for performing power amplification on the radio frequency signals of each frequency band of the third network.

The radio frequency circuit board further comprises a fifth welding area arranged on the surface of the substrate, a bonding pad electrically connected with the compatible circuit is arranged in the fifth welding area, and the fourth power amplifier module is welded in the fifth welding area and electrically connected with the compatible circuit through the bonding pad in the fifth welding area.

The fourth power amplifier module comprises a GSM PA device, the GSM PA device is matched with the fifth welding area in shape and size, and the GSM PA device comprises pins which are connected with the welding pads arranged on the fifth welding area in a one-to-one correspondence mode.

In a third aspect, the present application provides a radio frequency module that supports a second networking mode of a first network. The radio frequency module comprises the radio frequency circuit board, a second power amplifier module and a third power amplifier module. The second power amplifier module is soldered in the first soldering region and electrically connected to the compatible circuit through a soldering pad in the first soldering region, wherein the second power amplifier module is configured to perform power amplification on a radio frequency signal in a first preset frequency band of a network supported by the radio frequency module. The third power amplifier module is soldered in the second bonding area and electrically connected to the compatible circuit through a pad in the second bonding area, wherein the third power amplifier module is configured to perform power amplification on a radio frequency signal in a second preset frequency band of a network supported by the radio frequency module.

In one embodiment, the second power amplifier module includes an MHB LPAMiD device, the MHB LPAMiD device and the first bonding area are matched in shape and size, and the MHB LPAMiD device includes pins connected in one-to-one correspondence with pads provided on the first bonding area. The third power amplifier module comprises an LB LPAMID device, the LB LPAMID device and the second welding area are matched in shape and size, and the LB LPAMID device comprises pins which are connected with bonding pads arranged on the second welding area in a one-to-one correspondence mode.

In this embodiment, the radio frequency module integrates MMMB PA, GSM PA, ASM, part of LNA, part of filter unit, and the like in the LB LPAMiD device and/or the MHB LPAMiD device in a module manner, so as to avoid using a plurality of external power amplifier devices, switch devices, and the like, thereby improving the integration level of the radio frequency module and reducing the area occupied by the components included in the radio frequency module on the radio frequency circuit board. In addition, due to the improvement of the integration level of components, the architecture of the radio frequency module is simplified, and the wiring complexity, the development difficulty and the development cost of the radio frequency circuit board are reduced.

In an embodiment, the rf module further includes a low noise amplifier module and a filtering unit. The radio frequency circuit board further comprises a fourth welding area arranged on the surface of the substrate, wherein a bonding pad electrically connected with the compatible circuit is arranged in the fourth welding area, and the low-noise amplifier module and the filtering unit are respectively welded in the fourth welding area and electrically connected with the compatible circuit through the corresponding bonding pad in the fourth welding area. Wherein the filtering unit includes a filter and a duplexer.

Compared with the radio frequency module provided by the second aspect and the radio frequency module provided by the third aspect, although the redundant second welding area and fourth welding area exist when the radio frequency circuit board is applied to the radio frequency module of the second aspect, the second welding area and the fourth welding area which are left vacant are reserved on the radio frequency circuit board of the radio frequency module of the second aspect, so that the common-board compatibility of the radio frequency module of the second aspect and the radio frequency module of the third aspect can be realized, the development period of the two radio frequency modules can be shortened, and the development cost can be reduced.

In one embodiment, the first network comprises a 5G network and the second networking mode is an NSA mode of the 5G network.

The second power amplifier module is used for performing power amplification on the radio-frequency signals of the first network and the first preset frequency band of the second network, and the third power amplifier module is used for performing power amplification on the radio-frequency signals of the first network and the second preset frequency band of the second network.

The radio frequency module also comprises a fourth power amplifier module, and the fourth power amplifier module is used for carrying out power amplification on the radio frequency signals of all frequency bands of the third network.

The fourth power amplifier module comprises a GSM PA device, the GSM PA device and the fifth welding area are matched in shape and size, and the GSM PA device comprises pins which are connected with the welding pads arranged on the fifth welding area in a one-to-one correspondence mode.

Compared with the radio frequency module provided by the second aspect and the radio frequency module provided by the third aspect, although the redundant second welding area and fourth welding area exist when the radio frequency circuit board is applied to the radio frequency module of the second aspect, and the redundant fifth welding area exists when the radio frequency circuit board is applied to the radio frequency module of the third aspect, the vacant second welding area and fourth welding area are reserved on the radio frequency circuit board of the radio frequency module of the second aspect, and the vacant fifth welding area is reserved on the radio frequency circuit board of the radio frequency module of the third aspect, so that the common-board compatibility of the radio frequency module of the second aspect and the radio frequency module of the third aspect can be realized, the development period of the two radio frequency modules can be shortened, and the development cost can be reduced.

In a fourth aspect, the present application provides a terminal device, the terminal device includes a housing and the above-mentioned radio frequency module, the radio frequency module set up in the housing.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.

Fig. 1 is a schematic perspective view of a terminal device according to an embodiment of the present application.

Fig. 2 is a functional block diagram of the terminal device shown in fig. 1.

Fig. 3 is a schematic view of a first architecture of a radio frequency module according to an embodiment of the present disclosure.

Fig. 4 is a schematic diagram of a second architecture of a radio frequency module according to an embodiment of the present application.

Fig. 5 is a schematic diagram illustrating a third architecture of a radio frequency module according to an embodiment of the present application.

Fig. 6 is a schematic surface circuit layout diagram of an rf circuit board according to an embodiment of the present application.

Fig. 7 is a schematic cross-sectional view of the rf circuit board shown in fig. 6.

Fig. 8 is a schematic structural diagram of a first rf module according to an embodiment of the present application, where the first rf module supports a first networking mode of a first network.

Fig. 9 is a schematic structural diagram of a second rf module according to an embodiment of the present application, where the second rf module supports a second networking mode of a first network.

Fig. 10 is a schematic surface circuit layout diagram of another rf circuit board according to an embodiment of the present application.

Fig. 11 is a schematic view of another architecture of a first rf module according to an embodiment of the present application, where the first rf module supports a first networking mode of a first network.

Fig. 12 is a schematic view of another architecture of a second rf module according to an embodiment of the present application, in which the second rf module supports a second networking mode of a first network.

Description of the main elements

The following detailed description will further illustrate the present application in conjunction with the above-described figures.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. The drawings are for illustrative purposes only and are presented for purposes of illustration only and should not be construed as limiting the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

The radio frequency module related to the embodiment of the application can be applied to terminal equipment with a wireless communication function. The terminal device may also be referred to as a terminal (terminal), a User Equipment (UE), a Mobile Station (MS), a Mobile Terminal (MT), or the like. The terminal device includes but is not limited to electronic devices such as mobile phones, tablet computers, notebook computers, wearable devices, and vehicle-mounted devices. In the embodiment of the present application, a mobile phone is taken as an example to introduce the terminal device and a radio frequency module included in the terminal device.

The radio frequency module provided by the embodiment of the application is configured to support a 5G NR networking mode, and the 5G networking mode comprises an NSA mode and an SA mode. The dual connection mode of 4G signal and 5G signal is generally adopted in the NSA mode, which may include any one of EN-DC, NE-DC, and NGEN-DC architectures. Wherein, E represents Evolved-Universal Mobile Telecommunications System Terrestrial Radio Access (E-UTRA), namely a 4G Radio Access network; n represents a New Radio (NR), i.e., a 5G New wireless connection; DC is Dual Connectivity (Dual Connectivity), i.e. Dual Connectivity of 4G and 5G; NG stands for next generation core network, i.e. 5G core network.

Under an EN-DC framework, a core network is a 4G core network, a 4G base station is a main station, a 5G base station is an auxiliary station, and the EN-DC refers to double connection of a 4G radio access network and a 5G NR; under the NE-DC framework, the core network is a 5G core network, the 5G base station is a main station, the 4G base station is an auxiliary station, and the NE-DC is double connection of a 5G NR and a 4G radio access network; under the NGEN-DC architecture, the core network is a 5G core network, the 4G base station is a master station, the 5G base station is an auxiliary station, and the NGEN-DC refers to the double connection of the 4G radio access network and the 5GNR under the 5G core network. For convenience of description, the embodiment of the present application describes the NSA mode by taking an EN-DC architecture as an example.

Referring to fig. 1 and fig. 2 together, the present embodiment provides a terminal device 100, where the terminal device 100 includes, but is not limited to, a housing 11, a touch screen 12, an energy storage module 13, a multimedia device 14 (such as a camera), a processor 15, a memory 16, and a wireless communication system 200.

Wherein the housing 11 is used for mounting and protecting other structural components of the terminal device 100. The touch screen 12 is configured to receive a touch operation input by a user and display a visual output such as a graphic, a text, an icon, a video, and the like to the user, so as to implement human-computer interaction between the terminal device 100 and the user. The energy storage module 13 is configured to supply power to other functional modules of the terminal device 100, so that the other functional modules of the terminal device 100 can work normally. The energy storage module 13 may include a battery cell. The multimedia device 14 includes, but is not limited to, a camera module, a flash, a laser device, an audio device, etc. The processor 15 is used as a logic operation and control center of the terminal device 100, and is mainly responsible for functions such as data acquisition, data processing, logic operation, control output and the like. The processor 15 performs communication and information interaction with other functional modules of the terminal device 100, so as to implement functions of data processing and control of the terminal device 100. The memory 16 may be accessed by the processor 15 or a peripheral interface (not shown) or the like to enable storage or retrieval of data or the like. The memory 16 may include high speed random access memory and may also include non-volatile memory, such as one or more magnetic disk storage devices, flash memory devices, or other volatile solid state storage devices.

It is understood that fig. 1-2 only schematically illustrate some structural components included in the terminal device 100, the actual configuration and location of the structural components are not limited by fig. 1 and 2, and the terminal device 100 may actually have more or less structural components than those illustrated in fig. 1 and 2, for example, the terminal device 100 further includes devices for implementing other functions supported by the terminal device 100, such as a microphone, a function key (volume key, power key, etc.), an I/O port, and other input and output devices.

In the embodiment of the present application, the wireless communication system 200 includes four parts, namely, an antenna module, a Radio Frequency Front-end (RFFE), a Radio Frequency Transceiver (RF Transceiver) module, and a baseband (BB) signal processor, which together form a Receive path/downlink (i.e., receive, rx) and a Transmit path/uplink (i.e., transmit, tx). The radio frequency front end is an important part of the wireless communication system 200 of the terminal device 100, and is a core component for implementing a communication function between the terminal device 100 and various other mobile terminals.

From the 3G era, in order to save the area of the PCB and reduce the research and development difficulty of the mobile phone manufacturers, the rf front end is gradually moved from discrete devices to modules/modules. In the 4G era, rf front-ends are built in both discrete and modular ways. On an entry-level model, namely a low-end product, the requirements of all aspects can be completely met by adopting a mode of discrete devices. For space and cost reasons, the medium-high end model usually uses a radio frequency front end module. The modular approach requires "high integration and high performance", while the discrete approach requires "medium low integration and medium performance", with huge technical and market differences between the two approaches. In 2016, the Module Mode gradually became the mainstream, and then an ASM (Antenna Switch Module), an FEMiD (radio frequency Front End Module of Integrated Duplexer, front-End Module with Integrated Duplexer) was installed on the stage, and finally a Power Amplifier Module (Power Amplifier with Integrated Duplexer, PAMiD) Integrated with the Multi-Mode Multi-Band Amplifier Module (MMMB PA), the RF Switch, the filter, and other elements was evolved.

With the advent of the 5G era, the number of antennas and radio frequency paths in terminal equipment has increased dramatically, and the demand for the number of Low Noise Amplifiers (LNAs) has increased rapidly, and the circuit board of the terminal equipment has no more space. In this case, from PAMiD to LNA-integrated PAMiD, i.e., LPAMiD, the radio frequency front end can achieve smaller size and support more functions.

The architecture of the radio frequency module included in the terminal device 100 of the present application is described below with reference to specific schematic diagrams. It should be noted that the "rf module" described herein corresponds to the rf front end.

For example, fig. 3 is a schematic diagram of a first architecture of the rf module 20, where the rf module 20 employs discrete components. As shown in fig. 3, the rf Module 20 may include an rf circuit board 21 and a plurality of discrete components separately disposed on the rf circuit board 21, where the plurality of discrete components include, but are not limited to, a plurality of power amplifier modules 22, a signal receiving Module 23, a low noise amplifier (LNA BANK) 24, a plurality of filtering units 25, and an Antenna Switch Module (ASM) 26.

The Power Amplifier Module 22 may include a Power Amplifier Module (GSM PA) for Global System for Mobile communications (GSM) signals and a plurality of Multi-Mode Multi-Band Power Amplifier modules (MMMB PA). The signal receiving Module 23 includes a Diversity receiving Module (Low-band/Middle-band/High-band Diversity Front-End Module, LMH LDiFEM, integrated radio frequency Low noise amplifier, radio frequency switch, and Surface Acoustic Wave (SAW) filter). The filtering unit 25 may include a filter, a duplexer, and the like. The discrete components included in the rf module 20 may be electronic components, and the specific structure thereof is an existing structure, which is not described in detail herein.

As can be seen from the structure of the rf module 20 shown in fig. 3, the rf module 20 uses discrete components to occupy a large area on the rf circuit board 21.

With the increase of the requirement of the era 5G for LPAMiD, as shown in fig. 4, the embodiment of the present application further provides a second architecture of the radio frequency module 30, and the radio frequency module 30 adopts a module mode to set components. The rf module 30 may include a rf circuit board 31 and a plurality of components disposed on the rf circuit board 31, where the plurality of components include, but are not limited to, a plurality of power amplifier modules 32, a signal receiving module 33, a low noise amplifier module 34, a plurality of filtering units 35, and the like. The power amplifier module 32 may include LB LPAMiD devices (primary set PRX) and MHB LPAMiD devices (primary set PRX), the signal receiving module 33 may include LMH LDiFEM devices (diversity DRX), the low noise amplifier module 34 may include LNA BANK devices (diversity DRX), and the filtering unit 35 may include filters and duplexers.

In the embodiment of the present application, each component included in the rf module 30 may adopt an existing electronic device, and a specific structure thereof is an existing structure, which is not described in detail herein.

In the embodiment shown in fig. 4, the radio frequency module 30 integrates MMMB PA, GSM PA, ASM, LNA (primary set PRX), filter unit (primary set PRX), and the like into the LB LPAMiD device and/or the MHB LPAMiD device in a module manner, so as to avoid using multiple external power amplifier devices, switch devices, and the like, thereby improving the integration level of the radio frequency module 30, and reducing the area occupied by the components included in the radio frequency module 30 on the radio frequency circuit board 31. In addition, due to the improvement of the integration level of the components, the wiring complexity and the development cost of the radio frequency circuit board 31 are also reduced.

It can be understood that with the significant improvement of the complexity of the 5G radio frequency, the discrete mode not only needs to occupy a larger area of the radio frequency circuit board, but also may bring about 3 to 5 times of debugging time increase; in terms of cost, more expensive 5G test equipment and engineering resources familiar with 5G test are also required, resulting in higher cost. And use the module mode, most debugs have been realized at module design in-process inside the module, and debugging work load will move more to the software end, therefore debugging efficiency promotes greatly, can also reach reduce cost's purpose simultaneously.

In addition, the radio frequency module 30 includes separately arranged power amplifier modules, that is, an LB LPAMiD device and an MHB LPAMiD device, so that the radio frequency module 30 can support simultaneous amplification of a 4G LTE signal and a 5G NR signal, thereby realizing a dual-transmission function for the 4G LTE signal and the 5G NR signal, and meeting configuration requirements of EN-DC combinations between different frequency bands of the 4G LTE signal and the 5G NR signal. Therefore, the rf module 30 can be applied to various series of terminal devices supporting the NSA mode, such as a low-end series, a middle-end series, or a high-end series.

For non-independent Networking (NSA), it eventually evolved towards independent networking (SA) over time, since the SA model is a one-to-one networking model, with one core network being assigned to one base station. In order to adapt to the development trend of the 5G network, it is necessary to provide a radio frequency module with higher integration level. As shown in fig. 5, the embodiment of the present application further provides a third architecture of the rf module 40, where the rf module 40 adopts a module mode to set components. The rf module 40 may include a rf circuit board 41, and a power amplifier module 42 and a signal receiving module 43 disposed on the rf circuit board 41. The power amplifier module 42 may include an LMH LPAMiD device, and the signal receiving module 43 may include an LMH LDiFEM. In the embodiment of the present application, each component included in the rf module 40 may adopt an existing electronic device, and a specific structure thereof is an existing structure, which is not described in detail herein.

In the embodiment shown in fig. 5, the radio frequency module 40 integrates MMMB PA, GSM PA, ASM, LNA BANK, filter unit, etc. into the LMH LPAMiD device in a module manner, so as to avoid using a plurality of external power amplifier devices, switch devices, filter devices, etc., and further improve the integration level of the radio frequency module 40, thereby further reducing the area occupied by the components included in the radio frequency module 40 on the radio frequency circuit board 41 and simplifying the architecture of the radio frequency module 40. In addition, as the integration level of the components of the rf module 40 is further improved, the wiring complexity and the development cost of the rf circuit board 41 are further reduced. The rf module 40 can be applied to various series of terminal devices supporting the SA mode, such as a low-end series, a middle-end series, or a high-end series.

The 5G network of the NSA mode is not independent, but is modified based on the infrastructure of the 4G network, and then is accessed into the 5G network; the 5G network of the SA mode is based on the infrastructure of the newly-built 5G network, and then the 5G base station accesses the 5G core network. Compared with the NSA mode, the fine management of the SA mode is more advantageous than that of the NSA mode, and the SA mode is also more advantageous in terms of low latency and large connection, and the coverage is doubled and the rate is doubled. However, because the newly-built 5G base station has a high cost and a low speed, in many areas, the original 4G network base station and other devices are upgraded and modified, and then the 5G network is accessed. That is, the 5G networks of the NSA mode and the SA mode need to coexist for a long period of time in the future.

Since the SA mode and the NSA mode of the 5G network are two different networking modes, the architecture, index and specification of the radio frequency module supporting the SA mode and the radio frequency module supporting the NSA mode are different from each other. For radio frequency modules with different architectures, indexes, and specifications, corresponding radio frequency circuit boards are usually designed respectively at present, that is, one radio frequency circuit board only supports one type of radio frequency module.

Since the complexity of the 5G radio frequency is significantly improved, if corresponding radio frequency circuit boards are respectively designed for radio frequency modules of products with various specifications (such as low end/middle end/high end) and products with different network modes (such as 5G SA mode and 5G NSA mode), the number of circuit boards to be designed is undoubtedly increased by the solution, so that the development difficulty of the radio frequency circuit boards is increased, the development period is prolonged, and the material cost, the development labor cost, the production cost and the like are all improved.

For a radio frequency module of a terminal device supporting a 5G network, please refer to fig. 6 and 7 together in order to shorten a design cycle of a radio frequency circuit board and reduce a development cost of the radio frequency circuit board, an embodiment of the present application further provides a radio frequency circuit board 51, where the radio frequency circuit board 51 is compatible with a first radio frequency module and a second radio frequency module, where the first radio frequency module supports a first networking mode of a first network, and the second radio frequency module supports a second networking mode of the first network.

Fig. 6 exemplarily shows a surface circuit layout diagram of the radio frequency circuit board 51, and fig. 7 exemplarily shows a cross-sectional architecture diagram of the radio frequency circuit board 51. As shown in fig. 6 and 7, the rf circuit board 51 includes a substrate 511 and a compatible circuit 512 disposed in the substrate 511.

Specifically, the substrate 511 includes a multilayer laminated structure including at least a first insulating layer L1, a first metal layer M1, a second insulating layer L2, a second metal layer M2, and a third insulating layer L3, which are sequentially laminated. The first metal layer M1 may be a metal wiring layer, the compatible circuit 512 may be disposed in the first metal layer M1, and the second metal layer M2 may be a metal ground layer. The first and second metal layers M1 and M2 are spaced apart by the second insulating layer L2 and are insulated from each other.

The substrate 511 is also used for soldering components required by the first radio frequency module or the second radio frequency module. In this embodiment, a first bonding region A1, a second bonding region A2, a third bonding region A3, and a fourth bonding region A4 are provided on one surface of the substrate 511, that is, a surface of the first insulating layer L1 away from the first metal layer M1, and each of the bonding regions A1 to A4 is provided with a pad P electrically connected to the compatible circuit 512. Wherein the pad P may be formed on the surface of the substrate 511 by plating, printing, or the like. A through hole may be formed in the first insulating layer L1 corresponding to each pad P, and the through hole may be filled with a conductive material. It is understood that a plurality of connection ports may be reserved for the compatible circuit 512, and the connection ports are electrically connected with the corresponding pads P disposed on the surface of the substrate 511 through the conductive material in the corresponding through holes, so that the compatible circuit 512 can be electrically connected with the respective pads P.

In this embodiment, the first network includes a 5G network, the first networking mode may be an SA mode of the 5G network, and the first rf module may include a first power amplifier module and a signal receiving module. The first power amplifier module is configured to perform power amplification on radio frequency signals of all frequency bands (e.g., a low frequency band, a middle frequency band, and a high frequency band) of a network supported by the first radio frequency module. The first radio frequency module comprises a signal receiving module used for receiving radio frequency signals of each frequency band of a network supported by the first radio frequency module.

The second networking mode may be an NSA mode of the 5G network, and the second rf module may include a second power amplifier module, a third power amplifier module, a signal receiving module, a low noise amplifier module, and a filtering unit. The second power amplifier module is configured to perform power amplification on a radio frequency signal in a first preset frequency band (for example, a middle frequency band and a high frequency band) of a network supported by the second radio frequency module. The third power amplifier module is configured to perform power amplification on a radio frequency signal in a second preset frequency band (e.g., a low frequency band) of a network supported by the second radio frequency module. The second radio frequency module comprises a signal receiving module used for receiving radio frequency signals of each frequency band of a network supported by the second radio frequency module. The filtering unit comprises a filter, a duplexer and the like.

In this embodiment, the first welding area A1 is matched with any one of the first power amplifier module and the second power amplifier module, and the first welding area A1 is used for welding the first power amplifier module or the second power amplifier module. The compatible circuit 512 is electrically connected to the first power amplifier module or the second power amplifier module soldered on the first soldering area A1 through a pad P in the first soldering area A1. Specifically, the first power amplifier module and the second power amplifier module may both exist in the form of packaged devices, such as chips, for example, the first power amplifier module may employ an LMH LPAMiD device shown in fig. 5, and the second power amplifier module may employ an MHB LPAMiD device shown in fig. 4. The first power amplifier module is matched with the first welding area A1 in shape and size, and the first power amplifier module comprises pins which are connected with the welding pads arranged on the first welding area A1 in a one-to-one corresponding mode. Similarly, the second power amplifier module is also matched with the first welding area A1 in shape and size, and the second power amplifier module includes pins connected to the pads P disposed on the first welding area A1 in a one-to-one correspondence manner.

The second welding area A2 is matched with the third power amplifier module and is used for welding the third power amplifier module. The compatible circuit 512 is electrically connected to the third power amplifier module soldered on the second soldering area A2 through a pad P in the second soldering area A2. Specifically, the third power amplifier module may be in the form of a packaged device, for example, a chip, and for example, the third power amplifier module may employ the LB LPAMiD device shown in fig. 4. The third power amplifier module is matched with the second welding area A2 in shape and size, and the third power amplifier module comprises pins which are connected with the welding pads P arranged on the second welding area A2 in a one-to-one correspondence mode.

The third welding area A3 is matched with a signal receiving module included in the first radio frequency module or the second radio frequency module, and is used for welding the signal receiving module. The compatible circuit 512 is electrically connected to the signal receiving module soldered on the third soldering area A3 through a pad P in the third soldering area A3. Specifically, the signal receiving module may be in the form of a packaged device, such as a chip, for example, the LMH LDiFEM device shown in fig. 4 or fig. 5 may be used as the signal receiving module. The signal receiving module and the third welding area A3 are matched in shape and size, and the signal receiving module comprises pins which are connected with the welding pads P arranged on the third welding area A3 in a one-to-one corresponding mode.

The fourth welding area A4 is used for welding the low noise amplifier module and the filtering unit, and the compatible circuit 512 is further electrically connected to the low noise amplifier module and the filtering unit welded to the fourth welding area A4 through a corresponding pad P in the fourth welding area A4.

It should be noted that in the embodiment shown in fig. 6 and 7, the presentation of the various welding zones A1-A4 is merely illustrative and does not represent a limitation on their shape and relative position. The shapes of the welding areas A1-A4 are determined by the shapes of components to be welded, and the relative positions of the welding areas A1-A4 can be adjusted according to actual design requirements. Likewise, the illustration of the pads P in each of the bonding areas A1-A4 is merely illustrative and does not represent a limitation on the number thereof. The number and positions of the pads provided in each of the bonding areas A1 to A4 are determined by the number of pins, the pin positions, and the functions of the components to be bonded.

Because the first power amplification module of first radio frequency module and the second power amplification module of second radio frequency module share the first welding area A1 of radio frequency circuit board 51, and the LMH LPAMID device can be adopted to first power amplifier module, MHB LPAMID device can be adopted to the second power amplifier module, consequently can unify the definition at the encapsulation stage of components and parts with LMH LPAMID device and MHB LPAMID device's pin in advance, in order to realize first welding area A1 and compatible circuit 512 is to the compatibility of two kinds of devices, LMH LPAMID device and MHB LPAMID device.

In practical application, according to the requirement of the networking mode supported by the radio frequency module, the required components are welded on the radio frequency circuit board 51, and then the first radio frequency module supporting the first networking mode of the first network or the second radio frequency module supporting the second networking mode of the first network can be obtained.

In the radio frequency circuit board 51 provided in this embodiment, each of the soldering areas A1 to A4 and the compatible circuit 512 can be compatible with components included in different radio frequency modules, so that different radio frequency circuits can be obtained through the same radio frequency circuit board, thereby realizing common-board compatibility of a first radio frequency module and a second radio frequency module supporting different network modes, and further realizing common-board compatibility of radio frequency modules of terminal devices in different areas and different specifications. Meanwhile, the development difficulty of the radio frequency circuit board 51 can be effectively reduced, the development period of the radio frequency circuit board 51 can be shortened, and the development cost of the radio frequency circuit board 51 can be reduced, so that the development and production cost of a radio frequency module of the terminal device can be reduced.

The embodiment of the present application further provides a first rf module supporting a first networking mode of a first network, wherein fig. 8 exemplarily shows an architecture diagram of the first rf module 60. As shown in fig. 8, the first rf module 60 may include the rf circuit board 51, and a first power amplifier module 61 and a signal receiving module 62 disposed on the rf circuit board 51. The first power amplifier module 61 is configured to perform power amplification on radio frequency signals in various frequency bands (for example, a low frequency band, a middle frequency band, and a high frequency band), that is, a full frequency band, of a network supported by the first radio frequency module 60. The signal receiving module 62 is configured to receive radio frequency signals of each frequency band of the network supported by the first radio frequency module 60.

In this embodiment, the first network includes a 5G network, and the first networking mode is an SA mode of the 5G network. In addition to the first network, the first rf module 60 may also support a second network and a third network, wherein the second network includes a 3G network and a 4G network, and the third network includes a 2G network, such as a GSM network. Accordingly, the radio frequency signals of the network supported by the first radio frequency module 60 may include GSM signals, 3G signals, 4G LTE signals, and 5GNR signals. The frequency band of the radio frequency signals of various networks can be the same as the existing frequency band, and the specific frequency band is divided into the prior art, which is not described in detail herein.

In this embodiment, the first power amplifier module 61 is configured to perform power amplification on the radio frequency signals of each frequency band of all networks supported by the first radio frequency module 60. The signal receiving module 62 is configured to receive radio frequency signals of each frequency band of all networks supported by the first radio frequency module 60.

The first power amplifier module 61 is soldered in the first soldering area A1 of the rf circuit board 51, and is electrically connected to the compatible circuit 512 through a pad P in the first soldering area A1. The signal receiving module 62 is soldered in the third soldering area A3 of the rf circuit board 51, and is electrically connected to the compatible circuit 512 through a pad P in the third soldering area A3. In the present embodiment, the compatible circuit 512 included in the rf circuit board 51 can be understood as an auxiliary circuit of the first power amplifier module 61 and the signal receiving module 62.

The first rf module 60 may have a similar structure to the rf module 40 shown in fig. 5, that is, the first power amplifier module 61 uses an LMH LPAMiD device, and the signal receiving module 62 uses an LMH LDiFEM device. The LMH LPAMID device and the first welding area A1 are matched in shape and size, and the LMH LPAMID device comprises pins which are connected with the welding pads P arranged on the first welding area A1 in a one-to-one correspondence mode. The LMH LDiFEM device with third welding region A3 all matches in shape and size, just the LMH LDiFEM device contain with the pin that the pad P one-to-one that sets up on the third welding region A3 is connected.

In this embodiment, the first rf module 60 integrates the MMMB PA, the GSM PA, the ASM, the LNA BANK, the filtering unit (such as a filter and a duplexer) and the like into the LMH LPAMiD device in a modular manner, so as to avoid using a plurality of external power amplifier devices, switch devices, filtering devices and the like, and improve the integration level of the first rf module 60, thereby reducing the area occupied by the components included in the first rf module 60 on the rf circuit board 51. In addition, due to the improvement of the integration level of the components, the architecture of the first radio frequency module 60 is simplified, and the wiring complexity, the development difficulty and the development cost of the radio frequency circuit board 51 are reduced. Accordingly, the second welding area A2 and the fourth welding area A4 are left free.

Alternatively, in other embodiments, a part of the structure of the filtering unit, such as a filter or a duplexer, may be independent from the LMH LPAMiD device and soldered in the fourth soldering area A4.

In this embodiment, the LMH LPAMiD device is used for a main set antenna radio frequency link, and the LMH LPAMiD device may also be understood as a transmitting module and a main set receiving module of the first radio frequency module 60, and the LMH LPAMiD device is used for implementing transmission and main set reception of radio frequency signals of each frequency band of a network supported by the first radio frequency module 60.

The LMH LDiFEM device is used for a diversity antenna radio frequency link, and the LMH LDiFEM device may be understood as a diversity reception module of the first radio frequency module 60, and the LMH LDiFEM device is used for realizing diversity reception of radio frequency signals of each frequency band of a network supported by the first radio frequency module 60.

It should be noted that, in the embodiment shown in fig. 8, the components disposed on the radio frequency circuit board 51 are shown only schematically, and may be understood as a schematic diagram of a package structure, and do not represent a limitation on the shape and circuit configuration of the corresponding components.

Embodiments of the present application further provide a second rf module supporting a second networking mode of the first network, wherein fig. 9 exemplarily shows an architecture diagram of the second rf module 70. As shown in fig. 9, the second rf module 70 may include the rf circuit board 51, and a second power amplifier module 71, a third power amplifier module 72, a signal receiving module 73, a low noise amplifier module 74 and a filtering unit 75 disposed on the rf circuit board 51. The second power amplifier module 71 is configured to perform power amplification on a radio frequency signal in a first preset frequency band of a network supported by the second radio frequency module 70, the third power amplifier module 72 is configured to perform power amplification on a radio frequency signal in a second preset frequency band of a network supported by the second radio frequency module 70, and the signal receiving module 73 is configured to receive a radio frequency signal in each frequency band of the network supported by the second radio frequency module 70. The filtering unit 75 includes a filter, a duplexer, and the like.

In this embodiment, the first network includes a 5G network, and the second networking mode is an NSA mode of the 5G network. In addition to the first network, the second rf module 70 may also support a second network and a third network, wherein the second network includes a 3G network and a 4G network, and the third network includes a 2G network, such as a GSM network. Accordingly, the radio frequency signals of the network supported by the first radio frequency module 60 may include GSM signals, 3G signals, 4G LTE signals, and 5GNR signals. The first preset frequency band may include a middle frequency band and a high frequency band of each network, and the second preset frequency band may include a low frequency band of each network. The frequency band of the radio frequency signals of various networks can be the same as the existing frequency band, and the specific frequency band is divided into the prior art, which is not described in detail herein.

In this embodiment, the second power amplifier module 71 is configured to perform power amplification on the radio frequency signals in the first preset frequency bands of all the networks supported by the second radio frequency module 70, and the third power amplifier module 72 is configured to perform power amplification on the radio frequency signals in the second preset frequency bands of all the networks supported by the second radio frequency module 70. The signal receiving module 73 is configured to receive radio frequency signals of each frequency band of all networks supported by the second radio frequency module 70.

The second power amplifier module 71 is soldered in the first soldering area A1 of the rf circuit board 51, and is electrically connected to the compatible circuit 512 through a pad P in the first soldering area A1. The third power amplifier module 72 is soldered in the second soldering area A2 of the rf circuit board 51, and is electrically connected to the compatible circuit 512 through a pad P in the second soldering area A2. The signal receiving module 73 is soldered in the third soldering area A3, and is electrically connected to the compatible circuit 512 through a pad P in the third soldering area A3. The low noise amplifier module 74 and the filtering unit 75 are respectively soldered in the fourth soldering area A4, and are electrically connected to the compatible circuit 512 through corresponding pads P in the fourth soldering area A4. In this embodiment, the compatible circuit 512 included in the rf circuit board 51 may be understood as an auxiliary circuit of each component included in the second rf module 70.

The second rf module 70 may have a similar structure to the rf module 30 shown in fig. 4, that is, the second power amplifier module 71 adopts MHB LPAMiD devices, the third power amplifier module 72 adopts LB LPAMiD devices, the signal receiving module 73 adopts LMH LDiFEM devices, and the low noise amplifier module 74 adopts LNA BANK devices. The MHB LPAMID device and the first welding area A1 are matched in shape and size, and the MHB LPAMID device comprises pins which are connected with the welding pads P arranged on the first welding area A1 in a one-to-one correspondence mode. The LB LPAMiD device and the second bonding region A2 are matched in shape and size, and the LB LPAMiD device includes pins connected to the pads P disposed on the second bonding region A2 in a one-to-one correspondence. The LMH LDiFEM device with third welding region A3 all matches in shape and size, just the LMH LDiFEM device contain with the pin that the pad P one-to-one that sets up on the third welding region A3 is connected.

In this embodiment, the second rf module 70 integrates the MMMB PA, the GSM PA, the ASM, the LNA (primary set PRX), the filter unit (primary set PRX), and the like into the LB LPAMiD device and/or the MHB LPAMiD device in a modular manner, so as to avoid using a plurality of external power amplifier devices, switch devices, and the like, thereby improving the integration level of the second rf module 70, and reducing the area occupied by the components included in the second rf module 70 on the rf circuit board 51. In addition, due to the improvement of the integration level of the components, the architecture of the second radio frequency module 70 is simplified, and the wiring complexity, the development difficulty and the development cost of the radio frequency circuit board 51 are reduced.

In this embodiment, the LB LPAMiD device and the MHB LPAMiD device are both used for a main set antenna rf link, and the LB LPAMiD device and the MHB LPAMiD device may also be understood as a transmitting module and a main set receiving module of the second rf module 70, and the LB LPAMiD device and the MHB LPAMiD device are used for implementing transmission and main set reception of rf signals of each frequency band of a network supported by the second rf module 70.

The LMH LDiFEM device and the LNA BANK device are both used for a diversity antenna radio frequency link, the LMH LDiFEM device may be understood as a diversity reception module of the second radio frequency module 70, and the LMH LDiFEM device is used for achieving diversity reception of radio frequency signals of each frequency band of a network supported by the second radio frequency module 70.

It should be noted that, in the embodiment shown in fig. 9, the components disposed on the radio frequency circuit board 51 are shown only schematically, and may be understood as a schematic diagram of a package structure, and do not represent a limitation on the shape and circuit configuration of the corresponding components.

As can be seen from comparison between the first rf module 60 shown in fig. 8 and the second rf module 70 shown in fig. 9, although the redundant second soldering area A2 and fourth soldering area A4 exist when the rf circuit board 51 is applied to the first rf module 60, the second soldering area A2 and fourth soldering area A4 are reserved on the rf circuit board 51 of the first rf module 60, so that the first rf module 60 and the second rf module 70 can be compatible with each other on a common board, which is beneficial to shortening the development period of the first rf module 60 and the second rf module 70 and reducing the development cost.

Referring to fig. 10, another rf circuit board 51' is provided in the present embodiment. The structure of the rf circuit board 51' shown in fig. 10 is similar to that of the rf circuit board 51 shown in fig. 6, except that: the rf circuit board 51' further includes a fifth bonding area A5 disposed on the surface of the substrate 511, wherein a pad P electrically connected to the compatible circuit 512 is disposed in the fifth bonding area A5.

In the present embodiment, the rf circuit board 51 'is compatible with the first rf module 60' shown in fig. 11 and the second rf module 70 'shown in fig. 12, and accordingly, the fifth soldering area A5 is matched with the fourth power amplifier module 63 included in the first rf module 60' and is used for soldering the fourth power amplifier module 63. The compatible circuit 512 is also electrically connected to the fourth power amplifier module 63 soldered on the fifth soldering area A5 through a pad P in the fifth soldering area A5. Specifically, the fourth power amplifier module 63 may be packaged in a device, for example, a chip, and for example, the fourth power amplifier module 63 may adopt a GSM PA device. The fourth power amplifier module 63 and the fifth bonding area A5 are matched in shape and size, and the fourth power amplifier module 63 includes pins connected to the pads P disposed on the fifth bonding area A5 in a one-to-one correspondence manner.

Referring to fig. 11, another first rf module 60' is provided in the present embodiment. The structure of the first rf module 60' shown in fig. 11 is similar to that of the first rf module 60 shown in fig. 8, and the difference is that: the first rf module 60 shown in fig. 8 includes a first power amplifier module 61 for performing power amplification on the rf signals of each frequency band of all networks supported by the first rf module 60. However, in the first rf module 60 'shown in fig. 11, in addition to the first power amplifier module 61', the first rf module 60 'further includes a fourth power amplifier module 63, the first power amplifier module 61' is configured to perform power amplification on the rf signals in the frequency bands (e.g., low frequency band, middle frequency band, and high frequency band) of the first network and the second network supported by the first rf module 60', that is, in the full frequency band, and the fourth power amplifier module 63 is configured to perform power amplification on the rf signals in the frequency bands of the third network supported by the first rf module 60'.

In this embodiment, the fourth power amplifier module 63 is soldered in the fifth soldering area A5 of the rf circuit board 51, and is electrically connected to the compatible circuit 512 through the pad P in the fifth soldering area A5. As described above, the fourth power amplifier module 63 may include a GSM PA device, the GSM PA device and the fifth bonding area A5 are matched in shape and size, and the GSM PA device includes pins connected to the pads P disposed on the fifth bonding area A5 in a one-to-one correspondence manner.

In the first RF module 60 shown in FIG. 8, the LMH LPAMID device can be understood as a PA device that integrates the GSM PA shown in FIG. 11 and supports a 2G/3G/4G/5G network. In the first rf module 60 'shown in fig. 11, the GSM PA device can be understood as being separated from the LMH LPAMiD device shown in fig. 8, so as to obtain a GSM PA device supporting a 2G network and a PA device supporting a 3G/4G/5G network (i.e., the first power amplifier module 61').

Because the design method of the PA device of the 2G network is greatly different from that of the PA device of the 3G/4G/5G network, the PA device of the 2G network (i.e., GSM PA) is separated from the PA device of the 3G/4G/5G network (i.e., the first power amplifier module 61 '), so that the flexibility of the design of the first radio frequency module 60' can be improved, and meanwhile, preparation is made for the future network quit of the 2G network, so that the first radio frequency module 60' can be flexibly switched to the radio frequency scheme after the network quit of the 2G network.

Optionally, in other embodiments, the fourth power amplifier module 63 may also be integrated into the first power amplifier module 61', that is, the first power amplifier module 61' adopts the structure of the first power amplifier module 61. Accordingly, the fifth welding area A5 is left empty.

Referring to fig. 12, another second rf module 70' is provided in the present embodiment. The structure of the second rf module 70' shown in fig. 12 is similar to the structure of the second rf module 70 shown in fig. 9, except that: the second rf module 70 shown in fig. 9 includes the rf circuit board 51 shown in fig. 6, where the rf circuit board 51 does not include the fifth soldering area A5; the second rf module 70' shown in fig. 12 includes the rf circuit board 51' shown in fig. 10, wherein the rf circuit board 51' includes a fifth soldering area A5, and the fifth soldering area A5 is left empty.

Among them, in the embodiments shown in fig. 9 and 12, the MHB LPAMiD device and/or the LB LPAMiD device may be understood as a PA device that supports a 2G/3G/4G/5G network and that integrates at least a partial structure of a GSM PA.

As can be seen from comparison between the first rf module 60 'shown in fig. 11 and the second rf module 70' shown in fig. 12, although there are redundant second soldering areas A2 and fourth soldering areas A4 when the rf circuit board 51 'is applied to the first rf module 60', and there is redundant fifth soldering area A5 when the rf circuit board 51 'is applied to the second rf module 70', the second soldering areas A2 and fourth soldering areas A4 are reserved on the rf circuit board 51 'of the first rf module 60', and the fifth soldering area A5 is reserved on the rf circuit board 51 'of the second rf module 70', so that the first rf module 60 'and the second rf module 70' can be compatible with each other, which is beneficial to shortening the development cycle of the first rf module 60 'and the second rf module 70' and reducing the development cost.

Optionally, in other embodiments, in the second radio frequency module 70' shown in fig. 12, in addition to the second power amplifier module 71 and the third power amplifier module 72, the second radio frequency module 70' may further include a fourth power amplifier module, where the second power amplifier module 71 is configured to perform power amplification on radio frequency signals in a first preset frequency band of a first network and a first preset frequency band of a second network supported by the second radio frequency module 70', the third power amplifier module 72 is configured to perform power amplification on radio frequency signals in a second preset frequency band of the first network and the second network supported by the second radio frequency module 70', and the fourth power amplifier module is configured to perform power amplification on radio frequency signals in each frequency band of a third network supported by the second radio frequency module 70'. The fourth power amplifier module may adopt the structure of the GSM PA device shown in fig. 11, and is soldered in the fifth soldering area A5 of the radio frequency circuit board 51', and other specific technical details of the fourth power amplifier module refer to the specific description of the fourth power amplifier module 63 shown in fig. 11, which is not described herein again.

The above embodiments are only a few examples of the present application, and the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and all should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A radio frequency circuit board, comprising:

a substrate;

a compatible circuit disposed within the substrate; and

a first bonding area and a second bonding area provided on one surface of the substrate, each of the first bonding area and the second bonding area having a pad electrically connected to the compatible circuit;

the first welding area is matched with any one of a first power amplifier module of a first radio frequency module and a second power amplifier module of a second radio frequency module, and the first welding area is used for welding the first power amplifier module or the second power amplifier module;

the second welding area is matched with a third power amplifier module of the second radio frequency module and is used for welding the third power amplifier module;

the compatible circuit is electrically connected to the first power amplifier module or the second power amplifier module soldered on the first soldering area through a pad in the first soldering area, and is electrically connected to the third power amplifier module soldered on the second soldering area through a pad in the second soldering area.

2. The radio frequency circuit board according to claim 1, further comprising a third soldering region provided on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is provided in the third soldering region;

the third welding area is matched with the signal receiving module of the first radio frequency module or the signal receiving module of the second radio frequency module and is used for welding the signal receiving module, and the compatible circuit is electrically connected with the signal receiving module welded on the third welding area through a bonding pad in the third welding area.

3. The radio frequency circuit board according to claim 2, further comprising a fourth soldering region provided on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is provided in the fourth soldering region;

the fourth welding area is used for welding the low noise amplifier module and the filtering unit of the second radio frequency module, and the compatible circuit is also electrically connected with the low noise amplifier module and the filtering unit which are welded on the fourth welding area through corresponding bonding pads in the fourth welding area respectively.

4. The radio frequency circuit board according to claim 1, further comprising a fifth soldering region provided on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is provided in the fifth soldering region;

the fifth welding area is matched with a fourth power amplifier module of the first radio frequency module or a fourth power amplifier module of the second radio frequency module and is used for welding the fourth power amplifier module, and the compatible circuit is also electrically connected with the fourth power amplifier module welded on the fifth welding area through a bonding pad in the fifth welding area.

5. A radio frequency module that supports a first networking mode of a first network, the radio frequency module comprising:

the radio frequency circuit board of any one of claims 1-4; and

and the first power amplifier module is welded in the first welding area and is electrically connected with the compatible circuit through a welding pad in the first welding area, wherein the first power amplifier module is used for carrying out power amplification on radio-frequency signals of each frequency band of a network supported by the radio-frequency module.

6. The RF module of claim 5, wherein the first power amplifier module includes LMH LPAMID devices that match the first bonding region in shape and size, and the LMH LPAMID devices include pins that connect in a one-to-one correspondence with pads provided on the first bonding region.

7. The RF module of claim 5, further comprising a signal receiving module configured to receive RF signals of a network supported by the RF module;

the radio frequency circuit board further comprises a third welding area arranged on the surface of the substrate, wherein a bonding pad electrically connected with the compatible circuit is arranged in the third welding area, and the signal receiving module is welded in the third welding area and electrically connected with the compatible circuit through the bonding pad in the third welding area;

the signal receiving module comprises an LMH LDiFEM device, the LMH LDiFEM device is matched with the third welding area in shape and size, and the LMH LDiFEM device comprises pins which are connected with the pads arranged on the third welding area in a one-to-one correspondence manner.

8. The radio frequency module according to claim 5, wherein the radio frequency circuit board further comprises a fourth bonding area provided on the surface of the substrate, wherein a pad electrically connected to the compatible circuit is provided in the fourth bonding area;

the second weld area and the fourth weld area are left empty.

9. The RF module of any one of claims 5-8, wherein the first network comprises a 5G network, and the first networking mode is an SA mode of the 5G network.

10. The radio frequency module of claim 9, wherein the radio frequency module further supports a second network and a third network, wherein the second network comprises a 3G network and a 4G network, and the third network comprises a 2G network;

the first power amplifier module is used for performing power amplification on radio frequency signals of each frequency band of the first network and the second network;

the radio frequency module also comprises a fourth power amplifier module, and the fourth power amplifier module is used for carrying out power amplification on the radio frequency signals of each frequency band of the third network;

the radio frequency circuit board further comprises a fifth welding area arranged on the surface of the substrate, a bonding pad electrically connected with the compatible circuit is arranged in the fifth welding area, and the fourth power amplifier module is welded in the fifth welding area and electrically connected with the compatible circuit through the bonding pad in the fifth welding area;

11. A radio frequency module that supports a second networking mode of a first network, the radio frequency module comprising:

the radio frequency circuit board of any one of claims 1-4;

the second power amplifier module is welded in the first welding area and is electrically connected with the compatible circuit through a welding pad in the first welding area, wherein the second power amplifier module is used for performing power amplification on a radio frequency signal of a first preset frequency band of a network supported by the radio frequency module; and

and the third power amplifier module is welded in the second welding area and is electrically connected with the compatible circuit through a welding pad in the second welding area, wherein the third power amplifier module is used for performing power amplification on the radio-frequency signal of a second preset frequency band of a network supported by the radio-frequency module.

12. The rf module of claim 11, wherein the second power amplifier module includes an MHB LPAMiD device, the MHB LPAMiD device and the first bonding area are matched in shape and size, and the MHB LPAMiD device includes pins connected in a one-to-one correspondence with pads provided on the first bonding area;

the third power amplifier module comprises an LB LPAMID device, the LB LPAMID device and the second welding area are matched in shape and size, and the LB LPAMID device comprises pins which are connected with bonding pads arranged on the second welding area in a one-to-one correspondence mode.

13. The rf module of claim 12 further comprising a signal receiving module configured to receive rf signals for a network supported by the rf module;

the signal receiving module comprises an LMH LDiFEM device, the LMH LDiFEM device is matched with the third welding area in shape and size, and the LMH LDiFEM device comprises pins connected with the pads arranged on the third welding area in a one-to-one correspondence mode.

14. The rf module of claim 11 further comprising a low noise amplifier module and a filtering unit;

the radio frequency circuit board further comprises a fourth welding area arranged on the surface of the substrate, wherein a bonding pad electrically connected with the compatible circuit is arranged in the fourth welding area, and the low noise amplifier module and the filtering unit are respectively welded in the fourth welding area and are electrically connected with the compatible circuit through corresponding bonding pads in the fourth welding area;

wherein the filtering unit includes a filter and a duplexer.

15. The rf module of any one of claims 11-14, wherein the first network comprises a 5G network and the second networking mode is an NSA mode of the 5G network.

16. The radio frequency module of claim 15, wherein the radio frequency module further supports a second network and a third network, wherein the second network comprises a 3G network and a 4G network, and the third network comprises a 2G network;

the second power amplifier module is used for performing power amplification on the radio-frequency signals of the first preset frequency band of the first network and the second network, and the third power amplifier module is used for performing power amplification on the radio-frequency signals of the second preset frequency band of the first network and the second network;

17. A terminal device comprising a housing, wherein the terminal device further comprises the rf module according to any one of claims 5-16, the rf module being disposed in the housing.