CN217485406U

CN217485406U - Semiconductor reaction equipment

Info

Publication number: CN217485406U
Application number: CN202220637661.5U
Authority: CN
Inventors: 项习飞; 田才忠; 林保璋; 李士昌
Original assignee: Shengjisheng Semiconductor Technology Beijing Co ltd; SGS Ningbo Semiconductor Technology Co Ltd
Current assignee: Shengjisheng Semiconductor Technology Beijing Co ltd; SGS Ningbo Semiconductor Technology Co Ltd
Priority date: 2022-03-22
Filing date: 2022-03-22
Publication date: 2022-09-23
Anticipated expiration: 2032-03-22

Abstract

The utility model relates to a semiconductor reaction equipment, including cavity and a plurality of air inlet, air inlet sets up at the top of cavity, and air inlet has the main part, is provided with the concave part in the main part, has seted up a plurality of inlet ports on the concave part, and inlet port and cavity intercommunication, semiconductor reaction equipment still include the admission line, and the admission line passes through the inlet port and communicates to the inside of cavity. The utility model discloses silicon chip surface temperature's homogeneity in the semiconductor reaction equipment can be improved.

Description

Semiconductor reaction equipment

Technical Field

The utility model relates to a semiconductor manufacturing technical field especially relates to a semiconductor reaction equipment.

Background

For prior art semiconductor reaction devices, the distribution of gases throughout the chamber is non-uniform with the distribution of gases near the inlet port being different from the distribution of gases near the pumping port, and with the distribution of gases near the edge region being different from the distribution of gases near the center region. Although continuous rotation of the wafer can reduce non-uniformity of gas distribution, it still does not meet the process standards. As the uniformity requirements increase and as semiconductor advanced processes have higher uniformity requirements, many semiconductor front-end devices, such as DPN devices, also require higher uniformity, and reducing the chamber uniformity of the devices becomes a critical issue.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a semiconductor reaction equipment to improve silicon chip surface temperature's homogeneity.

The purpose of the utility model is realized by adopting the following technical scheme. The basis the utility model provides a semiconductor reaction equipment, including cavity and a plurality of air inlet portion, air inlet portion sets up the top of cavity, air inlet portion has the main part, be provided with the concave part in the main part a plurality of inlet ports have been seted up on the concave part, the inlet port with the cavity intercommunication, semiconductor reaction equipment still includes the admission line, the admission line passes through the inlet port intercommunication extremely the inside of cavity.

In some embodiments, the semiconductor reaction equipment further comprises an upper cover plate, the gas inlet part is fixedly connected with the upper cover plate, and the upper cover plate covers the top of the cavity.

In some embodiments, the semiconductor reaction equipment further comprises an air inlet pipe, the upper cover plate is further provided with a plurality of through holes, the air inlet pipe is connected to the plurality of through holes, and the plurality of through holes are communicated with the air inlet holes on the concave portion.

In some embodiments, an upper surface of the main body of the air inlet part is provided with a first fitting part, a lower surface of the upper cover plate is provided with a second fitting part, the first fitting part is provided to surround an outer circumference of the recess, and the second fitting part is provided to surround the plurality of through holes.

In some embodiments, the first mating portion has a plurality of first protrusions disposed thereon, and the second mating portion has a plurality of second protrusions disposed thereon, the plurality of first protrusions angularly mating with the plurality of second protrusions.

In some embodiments, the semiconductor reaction equipment further includes a rotating portion, the rotating portion includes a base, a rotating wheel, a cylinder and a first annular portion, a first engaging portion is disposed on an outer periphery of the base, the base is sleeved inside by the rotating wheel, a second engaging portion is disposed on an inner surface of the rotating wheel, the first engaging portion is engaged with the second engaging portion, a plurality of pins are disposed on an upper surface of the base, a first end of the cylinder is inserted into the pins, and a second end of the cylinder is fixedly connected to the first annular portion.

In some embodiments, the rotating portion further includes a first fixing plate, a pin and a second annular portion, the pin is disposed on an outer periphery of the first fixing plate, a plurality of spacers are disposed between an outer ring and an inner ring of the second annular portion, and the pin is in snap fit with the spacers.

In some embodiments, the rotating portion further includes a first heat shield ring overlapping an upper surface of the second heat shield ring and fixedly connected to the second heat shield ring, a second heat shield ring overlapping an upper surface of the second annular portion and fixedly connected to the second annular portion, and a second fixing plate fixedly connected to the second heat shield ring.

In some embodiments, the semiconductor reaction device further includes an air pump, the cavity is further provided with an air outlet, and the air pump is disposed in the cavity at a position close to the air outlet so as to discharge air in the cavity from the air outlet.

In some embodiments, the semiconductor reaction device further comprises a quartz plate disposed on the upper surface of the upper cover plate and pressed onto the upper cover plate.

The beneficial effects of the utility model include at least:

1. the concave parts are arranged at the top of the cavity and on the main body of the air inlet part, the plurality of air inlets, the air inlets and the cavity are communicated with the concave part, the process gas which is introduced into the concave part is temporarily stored in the concave part and buffered, and then the process gas enters the cavity from the air inlets, so that the flow resistance of the process gas is improved, the flow rate of the process gas is reduced, and the uniformity of the gas distribution in the cavity is improved.

2. The periphery that is set to around the concave part through first cooperation portion, the second cooperation portion is set to around a plurality of through-holes, be provided with a plurality of first archs on the first cooperation portion, be provided with a plurality of second archs on the second cooperation portion, a plurality of first archs on the first cooperation portion and a plurality of second archs on the second cooperation portion angle contact cooperation, form the enclosure space and then form great air current flow resistance, have promoted sealing performance.

3. Through setting up the rotating part and drive the silicon chip and rotate, promoted the gaseous homogeneity distribution in silicon chip surface.

4. Through setting up first heat shield ring and second heat shield ring, can shield by the heat radiation that produces in silicon chip and the cavity, avoid other parts of microscope carrier and rotating part to lead to damaging because of the heat radiation.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention can be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are specifically illustrated below, and the detailed description is given in conjunction with the accompanying drawings.

Drawings

Fig. 1 is a schematic structural view of a semiconductor reaction apparatus according to an embodiment of the present invention;

fig. 2 is a schematic structural view of an air inlet portion according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of an upper cover plate according to an embodiment of the present invention.

Detailed Description

To further illustrate the technical means of the present invention, the following detailed description of the embodiments of the semiconductor reaction apparatus according to the present invention is made with reference to the accompanying drawings and preferred embodiments.

As shown in fig. 1 and 2, the semiconductor reaction apparatus of the present invention includes a chamber 1 and a plurality of gas inlets 2, the chamber 1 is configured as a rectangle, but it is understood that the present invention is not limited to the shape of the chamber 1, and in one or more other embodiments, the chamber 1 may also be prismatic or cylindrical. The air inlet 2 is configured in a strip shape, but it is understood that the present invention is not particularly limited to the shape of the air inlet 2, and in one or more other embodiments, the air inlet 2 may have other shapes. It is shown in the figure, for realizing the homogeneity of the gas in the cavity 1, the utility model discloses set up 4 air inlets 2, 4 air inlets 2 set up respectively in the position on four limits of rectangle cavity 1, but can understand, the utility model discloses do not specifically limit to the quantity of air inlet 2, in one or more other embodiments, air inlet 2 also can be set up to other quantity. In a preferred embodiment, each of the plurality of air inlets 2 is disposed at the top of the chamber 1. Each of the plurality of gas inlet parts 2 has a main body 21, a concave portion 211 is provided on the main body 21, a plurality of gas inlet holes 2111 are opened on the concave portion 211, and the plurality of gas inlet holes 2111 communicate with the chamber 1 to introduce the process gas into the chamber 1.

The utility model discloses a set up the concave part with air inlet portion in the top of cavity, air inlet portion's main part, seted up a plurality of inlet ports, inlet port and cavity intercommunication on the concave part, realized with the process gas that lets in short-term storage in the concave part and cushion process gas, then enter into the cavity with process gas from the inlet port again, improved the flow resistance to gas, reduced gaseous velocity of flow to gas distribution's homogeneity has been improved in the cavity.

As shown in fig. 3, in one or more embodiments, the semiconductor reaction apparatus of the present invention further includes an upper cover plate 3, the gas inlet 2 is fixedly connected to the upper cover plate 3, in one or more embodiments, the gas inlet 2 is fixedly connected to the upper cover plate 3 through a screw, and in some other embodiments, the gas inlet 2 is fixedly connected to the upper cover plate 3 through a buckle. The top of cavity 1 is fitted to upper cover plate 3 lid, and the outer wall and the upper cover plate 3 fixed connection of cavity 1, in one or more embodiments, the outer wall and the upper cover plate 3 accessible screw thread spare fixed connection of cavity 1, in some other embodiments, the outer wall and the upper cover plate 3 accessible buckle fixed connection of cavity 1.

As shown in fig. 2 and 3, in one or more embodiments, the semiconductor reaction apparatus of the present invention further includes a gas inlet pipe (not shown), gas enters the chamber 1 through the gas inlet pipe, specifically, the upper cover plate 3 is provided with a plurality of through holes 311, the plurality of through holes 311 are communicated with the gas inlet pipe, the plurality of through holes 311 are communicated with the gas inlet holes 2111 of the concave portion 211, gas enters the plurality of through holes 311 from the gas inlet pipe and enters the concave portion 211, and enters the inside of the chamber 2 through the gas inlet holes 2111 formed in the concave portion 211, the upper surface of the main body 21 of the gas inlet portion 2 is provided with a first fitting portion 212, the lower surface of the upper cover plate 3 is provided with a second fitting portion 31, the first fitting portion 212 is disposed to surround the outer periphery of the concave portion 211, the second fitting portion 31 is disposed to surround the plurality of through holes 311, the first fitting portion 212 is provided with a plurality of first protrusions (not shown), the second matching part 31 is provided with a plurality of second protrusions (not shown), and the plurality of first protrusions on the first matching part 212 and the plurality of second protrusions on the second matching part 31 are in contact fit at an angle (for example, 10 degrees to 15 degrees) to form a closed space so as to form a large airflow resistance, so that the sealing between the air inlet part 2 and the upper cover plate 3 is realized, and the sealing performance is improved. In one or more other embodiments, the sealing between the air inlet 2 and the upper cover plate 3 may also be achieved by sleeving a sealing ring on the air inlet 2.

As shown in fig. 1, in one or more embodiments, the semiconductor reaction device of the present invention further includes a rotating portion 4, the silicon wafer is disposed on the surface of the rotating portion 4, and the rotating portion 4 is used to enable the silicon wafer 5 to rotate in the reaction process, so as to improve the uniformity distribution of the gas on the surface of the silicon wafer. Specifically, the rotating portion 4 includes a base 41, a runner 42, a cylinder 43, and a first annular portion 44. The base 41 is configured to be circular, a first gear is arranged on the periphery of the base 41, the rotating wheel 42 is configured to be annular and the base 41 is sleeved inside, a second gear is arranged on the inner ring of the rotating wheel 42, the first gear is meshed with the second gear, the gas flow meter controls the gas blown out by the external gas nozzles to blow the rotating wheel 42 to rotate, and then the rotating wheel 42 drives the base 41 to rotate. The upper surface of the base 41 is provided with a plurality of pins (not shown), the pins are configured to protrude upwards from the upper surface of the base 41 and are integrally formed with the base 41, the first ends of the cylinders 43 are respectively inserted into the pins, so that the base 41 can drive the cylinders 43 to rotate, the edge of the lower surface of the first annular part 44 is provided with a plurality of pin holes, the second ends of the cylinders 43 are fixedly connected with the first annular part 44 through pins, so that the cylinders 43 can drive the first annular part 44 to rotate in the rotating process, in the reaction process, a silicon wafer can be placed on the upper surface of the first annular part 44, and the silicon wafer can rotate along with the first annular part 44.

As shown in fig. 1, in one or more embodiments, the rotating portion 4 further includes a first fixing plate 45, a plurality of pins 46, a second annular portion 47, a first heat shield ring 48, a second heat shield ring 49, and a second fixing plate 50, the plurality of pins 46 are provided on an outer periphery of the first fixing plate 45 and are integrally formed with the first fixing plate 45, the second annular portion 47 is fitted on an outer periphery of the first annular portion 44, a plurality of interval portions 471 are provided between an outer ring and an inner ring of the second annular portion 47, the pins 46 are snap-fitted with the interval portions 471 in order to prevent the second annular portion 47 from being displaced due to an excessive flow rate of the process gas, the first heat shield ring 48 is lapped on an upper surface of the second ring 49 and is connected to the second heat shield ring 49 by pins, the second heat shield ring 49 is lapped on an upper surface of the second annular portion 47 by pins, the second fixing plate 50 is fixedly connected to the second heat shield ring 49, for securing the second heat shield ring 49. The first and second

heat shielding rings

48 and 49 are made of quartz and used for shielding heat radiation generated in the silicon wafer and the cavity 2, thereby preventing other parts of the stage 6 and the rotating portion 4 from being damaged due to the heat radiation, and the second heat shielding ring 49 is arranged to prevent the rotating portion 4 from being angularly displaced in the installation process due to gravity and stress points outside.

In one or more embodiments, semiconductor reaction equipment still includes air pump (not shown in the figure), still is provided with the venthole on the lateral wall of cavity 2, and the air pump sets up the position that is close to the venthole in cavity 2 so that the gas in cavity 2 is discharged from the venthole. Semiconductor reaction equipment still includes the quartz plate, and the quartz plate sets up the upper surface at the upper cover plate to the pressfitting is to the upper cover plate on. Semiconductor reaction equipment still includes the inside lining, and the cooperation of inside lining and cavity 2's inner wall butt, the inside lining adopts non-metallic material to make, and when plasma bombardment, the inside lining can not be by bombardment out metallic element to can not cause metal pollution.

Words such as "including," "comprising," "having," and the like are open-ended words and phrases that refer to "including, but not limited to," and may be used interchangeably therewith. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise.

The previous description of the disclosed aspects is provided to enable any person skilled in the art to practice the present invention. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the invention. Thus, the present invention is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. The semiconductor reaction equipment is characterized by comprising a cavity and a plurality of air inlet parts, wherein the air inlet parts are arranged at the top of the cavity and are provided with main bodies, concave parts are arranged on the main bodies, a plurality of air inlet holes are formed in the concave parts and communicated with the cavity, and the semiconductor reaction equipment also comprises an air inlet pipeline communicated to the inside of the cavity through the air inlet holes;

the semiconductor reaction equipment further comprises a rotating part, the rotating part comprises a base, a rotating wheel, a cylinder and a first annular part, a first meshing part is arranged on the periphery of the base, the rotating wheel is used for sleeving the base in the base, a second meshing part is arranged on the inner surface of the rotating wheel, the first meshing part is meshed with the second meshing part, a plurality of pins are arranged on the upper surface of the base, the first end of the cylinder is connected with the pins in an inserting mode, and the second end of the cylinder is fixedly connected with the first annular part.

2. The semiconductor reaction equipment as claimed in claim 1, further comprising an upper cover plate, wherein the gas inlet part is fixedly connected with the upper cover plate, and the upper cover plate covers the top of the cavity.

3. The semiconductor reaction device as claimed in claim 2, wherein the upper cover plate further defines a plurality of through holes, the air inlet duct is connected to the plurality of through holes, and the plurality of through holes are communicated with the air inlet holes on the concave portion.

4. The semiconductor reaction apparatus according to claim 3, wherein an upper surface of the main body of the gas inlet is provided with a first fitting portion, a lower surface of the upper cover plate is provided with a second fitting portion, the first fitting portion is provided to surround an outer periphery of the recess, and the second fitting portion is provided to surround the plurality of through holes.

5. The semiconductor reaction device as claimed in claim 4, wherein the first fitting portion is provided with a plurality of first protrusions, and the second fitting portion is provided with a plurality of second protrusions, and the plurality of first protrusions are angularly fitted with the plurality of second protrusions.

6. The semiconductor reaction device according to claim 1, wherein the rotating part further comprises a first fixing plate, pins and a second annular part, the pins are disposed on the outer periphery of the first fixing plate, a plurality of spacers are disposed between the outer ring and the inner ring of the second annular part, and the pins are in snap fit with the spacers.

7. The semiconductor reaction apparatus according to claim 6, wherein the rotating portion further includes a first heat shield ring overlapping an upper surface of the second heat shield ring and fixedly connected to the second heat shield ring, a second heat shield ring overlapping an upper surface of the second annular portion and fixedly connected to the second annular portion, and a second fixing plate fixedly connected to the second heat shield ring.

8. The semiconductor reaction device as claimed in claim 1, further comprising a gas pump, wherein the chamber further comprises a gas outlet, and the gas pump is disposed in the chamber near the gas outlet to discharge gas in the chamber from the gas outlet.

9. The semiconductor reaction device as claimed in claim 2, further comprising a quartz plate disposed on an upper surface of the upper cover plate and press-fitted to the upper cover plate.